JP4712169B2 - 窒化物系半導体レーザ素子および光学式情報再生装置 - Google Patents

窒化物系半導体レーザ素子および光学式情報再生装置 Download PDF

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Publication number
JP4712169B2
JP4712169B2 JP2000256218A JP2000256218A JP4712169B2 JP 4712169 B2 JP4712169 B2 JP 4712169B2 JP 2000256218 A JP2000256218 A JP 2000256218A JP 2000256218 A JP2000256218 A JP 2000256218A JP 4712169 B2 JP4712169 B2 JP 4712169B2
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Japanese (ja)
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JP2001148539A5 (enExample
JP2001148539A (ja
Inventor
幸生 山崎
敏之 奥村
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Sharp Corp
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Sharp Corp
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Priority to JP2000256218A priority Critical patent/JP4712169B2/ja
Priority to KR1020000053688A priority patent/KR100361100B1/ko
Priority to US09/659,601 priority patent/US6556603B1/en
Publication of JP2001148539A publication Critical patent/JP2001148539A/ja
Publication of JP2001148539A5 publication Critical patent/JP2001148539A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)
JP2000256218A 1999-09-10 2000-08-25 窒化物系半導体レーザ素子および光学式情報再生装置 Expired - Lifetime JP4712169B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000256218A JP4712169B2 (ja) 1999-09-10 2000-08-25 窒化物系半導体レーザ素子および光学式情報再生装置
KR1020000053688A KR100361100B1 (ko) 1999-09-10 2000-09-09 질화물계 반도체 레이저소자 및 광학식 정보재생장치
US09/659,601 US6556603B1 (en) 1999-09-10 2000-09-11 Nitride-contained semiconductor laser element and optical information reproducing device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP25648599 1999-09-10
JP11-256485 1999-09-10
JP1999256485 1999-09-10
JP2000256218A JP4712169B2 (ja) 1999-09-10 2000-08-25 窒化物系半導体レーザ素子および光学式情報再生装置

Publications (3)

Publication Number Publication Date
JP2001148539A JP2001148539A (ja) 2001-05-29
JP2001148539A5 JP2001148539A5 (enExample) 2007-06-28
JP4712169B2 true JP4712169B2 (ja) 2011-06-29

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JP2000256218A Expired - Lifetime JP4712169B2 (ja) 1999-09-10 2000-08-25 窒化物系半導体レーザ素子および光学式情報再生装置

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US (1) US6556603B1 (enExample)
JP (1) JP4712169B2 (enExample)
KR (1) KR100361100B1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002252427A (ja) * 2001-02-23 2002-09-06 Nec Corp Ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体基板
JP2003163412A (ja) * 2001-11-28 2003-06-06 Sharp Corp 窒化物半導体レーザ装置及び半導体光学装置
AU2003227230A1 (en) * 2002-04-04 2003-10-20 Sharp Kabushiki Kaisha Semiconductor laser device
KR100456063B1 (ko) * 2004-02-13 2004-11-10 에피밸리 주식회사 Ⅲ-질화물 반도체 발광소자
US20060165143A1 (en) * 2005-01-24 2006-07-27 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor laser device and manufacturing method thereof
JP4872450B2 (ja) * 2006-05-12 2012-02-08 日立電線株式会社 窒化物半導体発光素子
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8000366B2 (en) * 2008-11-21 2011-08-16 Palo Alto Research Center Incorporated Laser diode with high indium active layer and lattice matched cladding layer
CN102570303B (zh) * 2012-03-06 2013-09-18 北京航空航天大学 一种亚波长表面等离子体激光器
EP2741381B1 (en) 2012-12-06 2020-05-06 Nichia Corporation Semiconductor laser element
US20250141190A1 (en) * 2023-10-25 2025-05-01 Anhui GaN Semiconductor Co., Ltd. Semiconductor lasers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3219231B2 (ja) * 1995-08-14 2001-10-15 シャープ株式会社 化合物半導体発光素子およびその製造方法
JP3235440B2 (ja) 1995-11-24 2001-12-04 日亜化学工業株式会社 窒化物半導体レーザ素子とその製造方法
US6031858A (en) * 1996-09-09 2000-02-29 Kabushiki Kaisha Toshiba Semiconductor laser and method of fabricating same
JP3374737B2 (ja) * 1997-01-09 2003-02-10 日亜化学工業株式会社 窒化物半導体素子
US6146916A (en) * 1997-12-02 2000-11-14 Murata Manufacturing Co., Ltd. Method for forming a GaN-based semiconductor light emitting device

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KR20010030359A (ko) 2001-04-16
JP2001148539A (ja) 2001-05-29
US6556603B1 (en) 2003-04-29
KR100361100B1 (ko) 2002-11-18

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