JP4705426B2 - Alkali development type photosensitive resist ink composition for printed wiring board production, cured product thereof and printed wiring board - Google Patents
Alkali development type photosensitive resist ink composition for printed wiring board production, cured product thereof and printed wiring board Download PDFInfo
- Publication number
- JP4705426B2 JP4705426B2 JP2005205834A JP2005205834A JP4705426B2 JP 4705426 B2 JP4705426 B2 JP 4705426B2 JP 2005205834 A JP2005205834 A JP 2005205834A JP 2005205834 A JP2005205834 A JP 2005205834A JP 4705426 B2 JP4705426 B2 JP 4705426B2
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- JP
- Japan
- Prior art keywords
- component
- alkali
- printed wiring
- wiring board
- resist ink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000203 mixture Substances 0.000 title claims description 98
- 238000011161 development Methods 0.000 title claims description 35
- 239000003513 alkali Substances 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229920000642 polymer Polymers 0.000 claims description 85
- 238000000034 method Methods 0.000 claims description 59
- 238000006243 chemical reaction Methods 0.000 claims description 51
- 238000010526 radical polymerization reaction Methods 0.000 claims description 41
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 35
- 150000001875 compounds Chemical class 0.000 claims description 35
- 239000000178 monomer Substances 0.000 claims description 30
- 238000006116 polymerization reaction Methods 0.000 claims description 28
- 239000003999 initiator Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 22
- 125000003700 epoxy group Chemical group 0.000 claims description 21
- 150000008065 acid anhydrides Chemical class 0.000 claims description 14
- 239000004593 Epoxy Substances 0.000 claims description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 11
- 238000012712 reversible addition−fragmentation chain-transfer polymerization Methods 0.000 claims description 11
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 claims description 10
- 239000003085 diluting agent Substances 0.000 claims description 9
- 150000007519 polyprotic acids Polymers 0.000 claims description 8
- 229920006395 saturated elastomer Polymers 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 2
- 150000001993 dienes Chemical class 0.000 claims 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 101
- 239000000976 ink Substances 0.000 description 57
- -1 2-ethylhexyl Chemical group 0.000 description 54
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 41
- 238000000576 coating method Methods 0.000 description 39
- 239000011248 coating agent Substances 0.000 description 37
- 239000000243 solution Substances 0.000 description 34
- 229910052757 nitrogen Inorganic materials 0.000 description 25
- 229920000647 polyepoxide Polymers 0.000 description 23
- 239000002253 acid Substances 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 21
- 239000003822 epoxy resin Substances 0.000 description 21
- 239000000047 product Substances 0.000 description 21
- 229910000679 solder Inorganic materials 0.000 description 21
- 239000002904 solvent Substances 0.000 description 21
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 20
- 238000003786 synthesis reaction Methods 0.000 description 20
- 150000003624 transition metals Chemical class 0.000 description 19
- 229910052723 transition metal Inorganic materials 0.000 description 18
- 238000005530 etching Methods 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 17
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 16
- 206010034972 Photosensitivity reaction Diseases 0.000 description 15
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 15
- 230000036211 photosensitivity Effects 0.000 description 15
- 229920005989 resin Polymers 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- 238000010560 atom transfer radical polymerization reaction Methods 0.000 description 13
- 238000009826 distribution Methods 0.000 description 13
- 239000003960 organic solvent Substances 0.000 description 13
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 12
- 239000003054 catalyst Substances 0.000 description 12
- 239000006185 dispersion Substances 0.000 description 12
- 239000007788 liquid Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 150000003254 radicals Chemical class 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 9
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 9
- 238000001035 drying Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 9
- 239000003112 inhibitor Substances 0.000 description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 8
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 8
- 239000002585 base Substances 0.000 description 8
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 229920003986 novolac Polymers 0.000 description 8
- 238000010992 reflux Methods 0.000 description 8
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 7
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N Methyl ethyl ketone Natural products CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 7
- 125000005843 halogen group Chemical group 0.000 description 7
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 6
- 238000007259 addition reaction Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 6
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 6
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 6
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 5
- 239000005749 Copper compound Substances 0.000 description 5
- 229920000877 Melamine resin Polymers 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 150000001880 copper compounds Chemical class 0.000 description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 238000000016 photochemical curing Methods 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 238000006467 substitution reaction Methods 0.000 description 5
- AISZNMCRXZWVAT-UHFFFAOYSA-N 2-ethylsulfanylcarbothioylsulfanyl-2-methylpropanenitrile Chemical compound CCSC(=S)SC(C)(C)C#N AISZNMCRXZWVAT-UHFFFAOYSA-N 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 4
- SXIFAEWFOJETOA-UHFFFAOYSA-N 4-hydroxy-butyl Chemical group [CH2]CCCO SXIFAEWFOJETOA-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 4
- 239000012987 RAFT agent Substances 0.000 description 4
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 4
- 150000005215 alkyl ethers Chemical class 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 4
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 229930003836 cresol Natural products 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 4
- 239000003446 ligand Substances 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- 229920001451 polypropylene glycol Polymers 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 150000003512 tertiary amines Chemical class 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 3
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 3
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 3
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 3
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- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 3
- KNDQHSIWLOJIGP-UHFFFAOYSA-N 826-62-0 Chemical compound C1C2C3C(=O)OC(=O)C3C1C=C2 KNDQHSIWLOJIGP-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
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- 239000012988 Dithioester Substances 0.000 description 3
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- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 3
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- 230000004913 activation Effects 0.000 description 3
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- 239000012670 alkaline solution Substances 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 3
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- 238000013329 compounding Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- NKNDPYCGAZPOFS-UHFFFAOYSA-M copper(i) bromide Chemical compound Br[Cu] NKNDPYCGAZPOFS-UHFFFAOYSA-M 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 3
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- 230000004907 flux Effects 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 3
- 239000013067 intermediate product Substances 0.000 description 3
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- 238000004898 kneading Methods 0.000 description 3
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 3
- 239000003208 petroleum Substances 0.000 description 3
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- 230000035484 reaction time Effects 0.000 description 3
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- 150000003333 secondary alcohols Chemical class 0.000 description 3
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- 241000894007 species Species 0.000 description 3
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- 150000005846 sugar alcohols Polymers 0.000 description 3
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- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 2
- NIDNOXCRFUCAKQ-UMRXKNAASA-N (1s,2r,3s,4r)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid Chemical compound C1[C@H]2C=C[C@@H]1[C@H](C(=O)O)[C@@H]2C(O)=O NIDNOXCRFUCAKQ-UMRXKNAASA-N 0.000 description 2
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- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 2
- PMUPSYZVABJEKC-UHFFFAOYSA-N 1-methylcyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1(C)CCCCC1C(O)=O PMUPSYZVABJEKC-UHFFFAOYSA-N 0.000 description 2
- STMDPCBYJCIZOD-UHFFFAOYSA-N 2-(2,4-dinitroanilino)-4-methylpentanoic acid Chemical compound CC(C)CC(C(O)=O)NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O STMDPCBYJCIZOD-UHFFFAOYSA-N 0.000 description 2
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Description
本発明はソルダーレジストインキ、エッチングレジストインキ等として好適に用いることができるプリント配線板製造用アルカリ現像型感光性レジストインキ組成物、その硬化物およびプリント配線板に関するものである。 The present invention relates to an alkali development type photosensitive resist ink composition for producing a printed wiring board, which can be suitably used as a solder resist ink, an etching resist ink, and the like, a cured product thereof, and a printed wiring board.
従来、プリント配線板等におけるソルダーレジスト、エッチングレジスト等のレジストの形成は、印刷法により行われていたが、近年のプリント配線板等のファイン化への対応には不十分であり、そのため写真現像型レジストインキが用いられるようになってきている(特許文献1,2参照)。 Conventionally, the formation of a resist such as a solder resist or an etching resist on a printed wiring board or the like has been performed by a printing method, but it is not sufficient to cope with the recent refinement of a printed wiring board and the like, so photo development Type resist ink has been used (see Patent Documents 1 and 2).
写真現像型レジストインキの評価項目としては、指触タック、光硬化性、現像性等がある。指触タックが悪いと、マスクフィルムの貼り付きによるレジストの転着不良、マスクフィルムの汚染等作業面で問題が有る。また、光硬化性が低いと露光に長い時間を要するため作業性が低下する。また、現像性が悪いと現像時間が長くなり作業性が低下し、また、本来現像されるべき部分にレジスト成分が残存することで、エッチングレジスト等の場合にはエッチング不良が生じ、ソルダーレジストの場合でははんだ付着不良などの問題が起こってしまう。 Evaluation items for the photo-developing resist ink include finger touch, photo-curing property, developability and the like. If the finger touch is poor, there are problems in terms of work such as resist transfer failure due to sticking of the mask film and contamination of the mask film. In addition, if the photocurability is low, the workability deteriorates because a long time is required for exposure. Also, if the developability is poor, the development time becomes long and the workability is lowered, and the resist component remains in the portion that should be developed originally, so that in the case of an etching resist or the like, an etching failure occurs, and the solder resist In some cases, problems such as poor solder adhesion occur.
このため、指触タック、光硬化性、現像性等の性能が全て良好であるものが望ましいが、従来の写真現像型レジストインキでは指触タックと光硬化性及び現像性とはトレードオフの関係にある。すなわち、レジストインキ中のベース樹脂の分子量を大きくすると乾燥後の指触タックを向上させることができるが、ベース樹脂中には所望の分子量よりも高分子量の成分も多く混入され、未露光部への現像液の浸透性が低下してしまい、現像性が悪化してしまう。また、逆に、現像性を向上させる目的で前記分子量を小さくすると、所望の分子量より低分子量の成分が多く混入してしまい、乾燥塗膜の光硬化性は向上するものの指触タックが悪化してしまう。 For this reason, it is desirable that the performance such as finger touch, photo-curing property, developability, etc. is all good, but with conventional photo-developing resist ink, there is a trade-off relationship between finger tack, photo-curing property and developability. It is in. That is, if the molecular weight of the base resin in the resist ink is increased, the tactile tack after drying can be improved, but the base resin contains more high molecular weight components than the desired molecular weight, leading to unexposed areas. As a result, the penetrability of the developer decreases and the developability deteriorates. Conversely, if the molecular weight is decreased for the purpose of improving developability, more components having a lower molecular weight than the desired molecular weight are mixed, and the photocurability of the dried coating film is improved, but the finger tack is deteriorated. End up.
また、プリント配線板の更なるファイン化の要請のため、写真現像型レジストインキの解像性の更なる向上も望まれているが、現在の写真現像型レジストインキの露光・現像処理により形成されるレジスト被膜のエッジ部分には凹凸が生じてラフになりやすく、写真現像型レジストインキの更なるファイン化に対応できるほどのシャープな形状に形成することは困難である。これは、写真現像型レジストインキにおけるベース樹脂の分子量分布に起因してこのレジストインキの露光部分中及び未露光部分中においてアルカリ現像液等の現像液に対する溶解性に不均一が生じてしまうためと考えられる。 In addition, due to the demand for finer printed wiring boards, further improvement in the resolution of photographic development resist ink is desired, but it is formed by the current exposure and development processing of photographic development resist ink. The edge portion of the resist film is uneven and tends to be rough, and it is difficult to form a sharp shape that can cope with further refinement of photographic resist ink. This is because, due to the molecular weight distribution of the base resin in the photo-developing resist ink, the solubility of the resist ink in the exposed portion and the unexposed portion becomes non-uniform in the developing solution such as an alkaline developer. Conceivable.
これらの問題は、ベース樹脂中の分子量分布が広いために生じるものであるが、この分子量分布を狭くすることは困難なものであった。すなわち、写真現像型レジストのベース樹脂に多く用いられるアクリル系重合体は通常ラジカル重合により製造されており、その重合方法の性格上、分子量分布が広くなり易い。また、分子内での単量体配列の制御も難しく、単量体を一括で仕込んだ場合には反応の進行と共にポリマー間での単量体組成が変化していくため、最終的に得られた重合体は様々な単量体組成を持つ重合体の混合物となってしまうものである。また、この問題を解決すべく、従来のラジカル重合法で重合体中の単量体組成を重合体間でなるべく均一化するため、単量体を滴下しながら重合反応を進行させるなどの方法も考えられるが、重合体の合成に長時間を要することとなり、また得られる重合体の分子量の均一性も不十分となってしまうものである。
本発明は上記の点に鑑みて為されたものであり、低タック性、光硬化性及び現像性に優れ、且つ解像性に優れるプリント配線板製造用アルカリ現像型感光性レジストインキ組成物、並びにこのプリント配線板製造用アルカリ現像型感光性レジストインキ組成物を用いて製造された硬化物及びプリント配線板を提供することを目的とするものである。 The present invention has been made in view of the above points, and is an alkali development type photosensitive resist ink composition for producing a printed wiring board, which is excellent in low tackiness, photocurability and developability, and excellent in resolution, It is another object of the present invention to provide a cured product and a printed wiring board produced using the alkali development type photosensitive resist ink composition for producing the printed wiring board.
本発明に係るプリント配線板製造用アルカリ現像型感光性レジストインキ組成物は、下記(A)成分乃至(C)成分を含有することを特徴とするものである。
(A)リビングラジカル重合法により得られる分散度が1.8以下のアルカリ可溶性重合体
(B)光重合性単量体
(C)光重合開始剤
この組成物はプリント配線板製造用のエッチングレジストインキ、ソルダーレジストインキ等として好適に用いることができ、このときリビングラジカル重合法により生成される分子量分布が狭いアルカリ可溶性重合体を含有するため、高分子量の成分が混入することによる乾燥塗膜の未露光部への現像液の浸透性が低下による現像性の悪化や、低分子量の成分が混入することによる乾燥塗膜の指触タックの悪化を防止することができ、且つ、乾燥塗膜の未露光部分におけるアルカリ可溶性の分布にむらが生じにくくなって、均一なアルカリ可溶性を有する乾燥塗膜を形成することができる。
The alkali development type photosensitive resist ink composition for producing a printed wiring board according to the present invention comprises the following components (A) to (C).
(A) Alkali-soluble polymer having a dispersity of 1.8 or less obtained by living radical polymerization method (B) Photopolymerizable monomer (C) Photopolymerization initiator This composition is an etching resist for producing printed wiring boards. It can be suitably used as ink, solder resist ink, etc., and at this time, it contains an alkali-soluble polymer with a narrow molecular weight distribution produced by the living radical polymerization method. It is possible to prevent the deterioration of developability due to a decrease in the permeability of the developer to the unexposed area and the deterioration of the touch of the dry paint film due to the mixing of low molecular weight components. Unevenness is hardly generated in the alkali-soluble distribution in the unexposed portion, and a dry coating film having uniform alkali-solubility can be formed.
本発明に係るプリント配線板製造用アルカリ現像型感光性レジストインキ組成物は、上記(A)成分及び(C)成分を含有し、且つ上記(A)成分が感光性を有するものであっても良い。このような組成物においても、プリント配線板製造用のエッチングレジストインキ、ソルダーレジストインキ等として好適に用いることができ、このときリビングラジカル重合法により生成される分子量分布が狭いアルカリ可溶性重合体を含有するため、高分子量の成分が混入することによる乾燥塗膜の未露光部への現像液の浸透性が低下による現像性の悪化や、低分子量の成分が混入することによる乾燥塗膜の指触タックの悪化を防止することができ、且つ、乾燥塗膜の未露光部分におけるアルカリ可溶性の分布にむらが生じにくくなって、均一なアルカリ可溶性を有する乾燥塗膜を形成することができる。このとき(A)成分の他に感光性成分を加えなくても(C)成分を加えるのみで、良好な硬化物特性を維持することができる。 The alkali development type photosensitive resist ink composition for producing a printed wiring board according to the present invention contains the component (A) and the component (C), and the component (A) has photosensitivity. good. Even in such a composition, it can be suitably used as an etching resist ink for manufacturing a printed wiring board, a solder resist ink, etc., and at this time contains an alkali-soluble polymer having a narrow molecular weight distribution generated by a living radical polymerization method. Therefore, the deterioration of the developability due to the decrease in the permeability of the developer to the unexposed part of the dry coating due to the mixing of high molecular weight components and the touch of the dry coating due to the mixing of low molecular weight components Deterioration of tack can be prevented, and unevenness in the alkali-soluble distribution in the unexposed portion of the dried coating film is less likely to occur, so that a dried coating film having uniform alkali solubility can be formed. At this time, it is possible to maintain good cured product characteristics only by adding the component (C) without adding a photosensitive component in addition to the component (A).
また、この場合、更に上記(B)成分を含有すると、組成物に更なる感光性を付与することができ、また硬化物の物性の調整を行うこともできる。 In this case, when the component (B) is further contained, further photosensitivity can be imparted to the composition, and the physical properties of the cured product can be adjusted.
上記のような組成物においては、上記(A)成分が、原子移動ラジカル重合法で合成されたものであることが好ましく、またこの(A)成分が、可逆的付加−分裂連鎖移動重合法で合成されたものであることも好ましい。かかるリビングラジカル重合法はモノマーの適応範囲が広く、(A)成分の生成に好適なものである。 In the composition as described above, the component (A) is preferably synthesized by an atom transfer radical polymerization method, and the component (A) is a reversible addition-fragmentation chain transfer polymerization method. It is also preferred that it is synthesized. Such a living radical polymerization method has a wide range of application of monomers and is suitable for the production of component (A).
また、上記(A)成分は、分子内にカルボキシル基を有することが好ましく、これにより(A)成分にアルカリ可溶性を付与することができ、且つカルボキシル基を有するモノマーの重合、若しくはポリマー中の水酸基への酸無水物の付加によりアルカリ可溶性基を導入する事が可能であり、他のアルカリ可溶性基を導入する場合と較べ、カルボキシル基を有する原料の入手のし易さ、導入反応が容易という利点がある。また、特にレジストインキの成分として後述する(G)成分を用いる場合、カルボキシル基とエポキシ基の反応が起る事で塗膜性能を容易に向上できるという利点がある。 In addition, the component (A) preferably has a carboxyl group in the molecule, thereby imparting alkali solubility to the component (A), and polymerization of a monomer having a carboxyl group, or a hydroxyl group in the polymer. It is possible to introduce an alkali-soluble group by adding an acid anhydride to the base, and compared to the case of introducing another alkali-soluble group, it is easy to obtain a raw material having a carboxyl group and has an advantage that the introduction reaction is easy. There is. Moreover, when using the (G) component mentioned later as a component of resist ink especially, there exists an advantage that coating-film performance can be improved easily because reaction of a carboxyl group and an epoxy group occurs.
また、上記(A)成分が、分子内にエチレン性二重結合を有するものであることが好ましく、これにより(A)成分に感光性を付与することができ、組成物の硬化性の調整、及び硬化物の物性の調整を行うことができるものである。 Further, the component (A) is preferably one having an ethylenic double bond in the molecule, whereby the photosensitivity can be imparted to the component (A), and the curability of the composition can be adjusted. In addition, the physical properties of the cured product can be adjusted.
また、上記(A)成分は、側鎖にカルボキシル基を有する重合体(A1)におけるカルボキシル基の一部に、分子内に少なくとも一つのエチレン性二重結合と少なくとも一つのカルボキシル基と反応し得る反応基とを有する化合物(d)を反応させて得られるものであることも好ましい。このような成分は2段階のみの合成によりカルボキシル基及びエチレン性二重結合を導入され、且つ組成物に一時的な皮膜として十分な塗膜性能を付与することができることから、特にエッチングレジストインキとして好適に用いることができるものである。 In addition, the component (A) can react with at least one ethylenic double bond and at least one carboxyl group in the molecule of a part of the carboxyl group in the polymer (A1) having a carboxyl group in the side chain. It is also preferable that the compound is obtained by reacting a compound (d) having a reactive group. Since such a component has a carboxyl group and an ethylenic double bond introduced by a two-step synthesis and can impart sufficient coating performance as a temporary coating to the composition, it is particularly useful as an etching resist ink. It can be used suitably.
また、上記(A)成分が、側鎖にエポキシ基を有する重合体におけるエポキシ基の一部又は全部に、飽和若しくは不飽和のモノカルボン酸(e)を反応させ、更に前記反応により生成した水酸基の一部に多塩基酸無水物(f)を反応させて得られるものであることも好ましい。このような成分はより多くのカルボキシル基、エチレン性不飽和二重結合を導入可能であり、永久塗膜としての性能を向上させる事が容易であることから、組成物は特にソルダーレジストインキとして好適に用いることができる。 Further, the component (A) is a hydroxyl group formed by reacting a saturated or unsaturated monocarboxylic acid (e) with a part or all of the epoxy group in the polymer having an epoxy group in the side chain, and further by the reaction. It is also preferable that it is obtained by reacting a part of the polybasic acid anhydride (f). Since such components can introduce more carboxyl groups and ethylenically unsaturated double bonds and can easily improve the performance as a permanent coating, the composition is particularly suitable as a solder resist ink. Can be used.
また、上記のような組成物中には下記(G)成分を含有することも好ましい。
(G)多官能エポキシ化合物
この場合、組成物に熱硬化性を付与することができ、光硬化後に更に熱硬化させることにより硬化物の強度、硬度、耐薬品性等の硬化物特性を更に向上することができるものである。
Moreover, it is also preferable to contain the following (G) component in the above compositions.
(G) Polyfunctional epoxy compound In this case, the composition can be given thermosetting properties, and further cured by photo-curing to further improve the cured product properties such as strength, hardness and chemical resistance. Is something that can be done.
また組成物中には、下記(H)成分を含有させることも好ましい。
(H)稀釈剤
この場合、組成物の樹脂成分を溶解、希釈して組成物を液状として塗布可能な状態にすることができ、また組成物の塗布後には乾燥により揮散して乾燥塗膜を造膜させることができる。
Moreover, it is also preferable to contain the following (H) component in a composition.
(H) Diluent In this case, the resin component of the composition can be dissolved and diluted so that the composition can be applied as a liquid, and after application of the composition, it is volatilized by drying to form a dry coating film. A film can be formed.
また、本発明に係る硬化物は、上記のようなプリント配線板製造用アルカリ現像型感光性レジストインキ組成物を基板上に硬化成形して成ることを特徴とするものである。この硬化物はプリント配線板製造用レジストとして優れた特性を有するものである。 The cured product according to the present invention is obtained by curing and molding the above-mentioned alkali development type photosensitive resist ink composition for producing a printed wiring board on a substrate. This cured product has excellent properties as a resist for manufacturing printed wiring boards.
また、本発明に係るプリント配線板は、上記硬化物からなる層を有することを特徴とするものである。このためプリント配線板に対し、前記硬化物からなる層にて、良好な皮膜特性を有するレジストを形成することができるものである。 The printed wiring board according to the present invention is characterized by having a layer made of the cured product. For this reason, the resist which has a favorable film | membrane characteristic can be formed in the layer which consists of the said hardened | cured material with respect to a printed wiring board.
本発明によれば、アルカリ可溶性重合体の分子量分布が広いことに起因する現像性の悪化や指触タックの悪化等が生じることがなく、指触タック、光硬化性、現像性等の性能が全て良好な組成物を得ることができるものであり、且つ解像性にも優れることから微細且つシャープなパターンを形成することができて特に近年のプリント配線板の更なるファイン化に対応可能なものとすることができるものである。 According to the present invention, there is no deterioration in developability or deterioration in touch and tack due to the wide molecular weight distribution of the alkali-soluble polymer, and performance such as touch and tackiness, photocurability and developability is achieved. It is possible to obtain a good composition for all, and since it is excellent in resolution, it can form a fine and sharp pattern, and can cope with further finer printed wiring boards in recent years. It can be.
以下、本発明を実施するための最良の形態について説明する。 Hereinafter, the best mode for carrying out the present invention will be described.
[プリント配線板製造用アルカリ現像型感光性レジストインキ組成物の構成成分]
まず、プリント配線板製造用アルカリ現像型感光性レジストインキ組成物(以下、組成物という。)を調製するための成分について説明する。
[Constituent Components of Alkali Development Type Photosensitive Resist Ink Composition for Printed Wiring Board Production]
First, components for preparing an alkali developing type photosensitive resist ink composition (hereinafter referred to as a composition) for producing a printed wiring board will be described.
(A)リビングラジカル重合法により得られる分散度が1.8以下のアルカリ可溶性重合体
この(A)成分は、アルカリ可溶性基を分子内に有する重合体であって、リビングラジカル重合法により得られるものであり、そして重量平均分子量(Mw)と数平均分子量(Mn)との比によって定義される分散度(Mw/Mn)が、1.8以下の範囲のものである。前記分散度は、GPC(ゲル・パーミエーション・クロマトグラフィ)による分子量の測定結果に基づいて導出することができる。
(A) Alkali-soluble polymer having a dispersity of 1.8 or less obtained by the living radical polymerization method The component (A) is a polymer having an alkali-soluble group in the molecule, and is obtained by the living radical polymerization method. The degree of dispersion (Mw / Mn) defined by the ratio of the weight average molecular weight (Mw) to the number average molecular weight (Mn) is in the range of 1.8 or less. The degree of dispersion can be derived based on the measurement result of molecular weight by GPC (gel permeation chromatography).
(A)成分の合成に用いられるモノマーについては、共重合可能なエチレン性不飽和単量体であればよく、例えば、メチル(メタ)アクリレート、エチル(メタ)アクリレート、プロピル(メタ)アクリレート、ブチル(メタ)アクリレート、イソブチル(メタ)アクリレート、ターシャリーブチル(メタ)アクリート、2−エチルヘキシル(メタ)アクリレート、n−オクチル(メタ)アクリレート、n−デシル(メタ)アクリレート、イソデシル(メタ)アクリレート、ラウリル(メタ)アクリレート、ミリスチル(メタ)アクリレート、セチル(メタ)アクリレート、ステアリル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート、イソボルニル(メタ)アクリレート等の直鎖、分岐或は脂環式アルキル系(メタ)アクリレート類;2−ヒドロキシエチル(メタ)アクリレート、2−ヒドロキシプロピル(メタ)アクリレート、3−ヒドロキシプロピル(メタ)アクリレート、2−ヒドロキシブチル(メタ)アクリレート、3−ヒドロキシブチル(メタ)アクリレート、4−ヒドロキシブチル(メタ)アクリレート等のヒドロキシアルキル(メタ)アクリレート類;ポリエチレングリコール、ポリプロピレングリコール等のポリアルキレングリコール(アルキレングリコール単位数は例えば2〜23)のモノ(メタ)アクリレート類;メトキシエチル(メタ)アクリレート、エトキシエチル(メタ)アクリレート、ジエチレングリコールモノ(メタ)アクリレート、トリエチレングリコールモノ(メタ)アクリレート、メトキシジエチレングリコール(メタ)アクリレート等のエチレングリコールエステル系(メタ)アクリレート類、及び同様なプロピレングリコール系(メタ)アクリレート類、ブチレングリコール系モノ(メタ)アクリレート類;ジメチルアミノメチル(メタ)アクリレート、ジエチルアミノメチル(メタ)アクリレート、2−ジメチルアミノエチル(メタ)アクリレート等のアミノ基含有(メタ)アクリレート類;べンジル(メタ)アクリレート等の芳香族系の(メタ)アクリレート類;(メタ)アクリルアミド、N−メチル(メタ)アクリルアミド、N−プロピル(メタ)アクリルアミド、N−ターシャリーブチル(メタ)アクリルアミド、N−ターシャリーオクチル(メタ)アクリルアミド、ジアセトン(メタ)アクリルアミド等のアクリルアミド類;スチレン、o−ビニルトルエン、m−ビニルトルエン、p−ビニルトルエン、α−メチルスチレン、o−ヒドロキシスチレン、m−ヒドロキシスチレン、p−ヒドロキシスチレン、o−ヒドロキシ−α−メチルスチレン、m−ヒドロキシ−α−メチルスチレン、p−ヒドロキシ−α−メチルスチレン、p−ビニルベンジルアルコール等のビニル芳香族化合物類;マレイミド、N−ベンジルマレイミド、N−フェニルマレイミド、N−シクロヘキシルマレイミド等のマレイミド類;2−(メタ)アクリルアミドエタンスルホン酸、2−(メタ)アクリルアミドプロパンスルホン酸、3−(メタ)アクリルアミドプロパンスルホン酸等のスルホン酸基含有(メタ)アクリレート類;その他にグリセロールモノ(メタ)アクリレート、酢酸ビニル、ビニルエーテル類、(メタ)アリルアルコール、シアン化ビニリデン、塩化ビニル、塩化ビニリデン、ビニルピロリドン、(メタ)アクリロニトリル等が挙げられる。 About the monomer used for the synthesis | combination of (A) component, what is necessary is just a copolymerizable ethylenically unsaturated monomer, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (Meth) acrylate, isobutyl (meth) acrylate, tertiary butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, n-octyl (meth) acrylate, n-decyl (meth) acrylate, isodecyl (meth) acrylate, lauryl Linear, branched or alicyclic alkyl (meth) such as (meth) acrylate, myristyl (meth) acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl (meth) acrylate, isobornyl (meth) acrylate, etc. Acryle 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, 4- Hydroxyalkyl (meth) acrylates such as hydroxybutyl (meth) acrylate; polyalkylene glycols such as polyethylene glycol and polypropylene glycol (the number of alkylene glycol units is, for example, 2 to 23) mono (meth) acrylates; methoxyethyl (meth) Acrylate, ethoxyethyl (meth) acrylate, diethylene glycol mono (meth) acrylate, triethylene glycol mono (meth) acrylate, methoxydiethylene glycol (meth) acrylate Ethylene glycol ester-based (meth) acrylates such as rate, and similar propylene glycol-based (meth) acrylates, butylene glycol-based mono (meth) acrylates; dimethylaminomethyl (meth) acrylate, diethylaminomethyl (meth) acrylate, Amino group-containing (meth) acrylates such as 2-dimethylaminoethyl (meth) acrylate; aromatic (meth) acrylates such as benzyl (meth) acrylate; (meth) acrylamide, N-methyl (meth) acrylamide Acrylamides such as N-propyl (meth) acrylamide, N-tertiary butyl (meth) acrylamide, N-tertiary octyl (meth) acrylamide and diacetone (meth) acrylamide; styrene, o-vinyltoluene Ene, m-vinyltoluene, p-vinyltoluene, α-methylstyrene, o-hydroxystyrene, m-hydroxystyrene, p-hydroxystyrene, o-hydroxy-α-methylstyrene, m-hydroxy-α-methylstyrene, vinyl aromatic compounds such as p-hydroxy-α-methylstyrene and p-vinylbenzyl alcohol; maleimides such as maleimide, N-benzylmaleimide, N-phenylmaleimide and N-cyclohexylmaleimide; 2- (meth) acrylamide ethane Sulfonic acid group-containing (meth) acrylates such as sulfonic acid, 2- (meth) acrylamidepropanesulfonic acid, and 3- (meth) acrylamidepropanesulfonic acid; in addition, glycerol mono (meth) acrylate, vinyl acetate, vinyl ethers, ( Meta) Lil alcohol, vinylidene cyanide, vinyl chloride, vinylidene chloride, vinyl pyrrolidone, and (meth) acrylonitrile.
また、複数個の共重合可能なエチレン性不飽和基を有する化合物もゲル化の起らない範囲で少量使用できる。このような多官能性のものとしては、エチレングリコールジ(メタ)アクリレート、プロピレングリコールジ(メタ)アクリレート、1,4−ブタンジオールジ(メタ)アクリレート、1,6−ヘキサンジオールジ(メタ)アクリレート、トリメチロールプロパンジ(メタ)アクリレート、トリメチロールプロパントリ(メタ)アクリレート、ペンタエリスリトールトリ(メタ)アクリレート、ペンタエリスリトールテトラ(メタ)アクリレート、ジビニルベンゼン、ジイソプロペニルベンゼン、トリビニルベンゼン等が挙げられる。これらは単独で又は組み合わせて用いることができ、レジストインキとした際のプリキュア後の塗膜の硬度及び最終的なレジストの硬度を調節するために、或は分散性、溶解性、印刷性等、レジストインキの使用工程上の作業性の調節等のために用いられる。 Also, a small amount of a compound having a plurality of copolymerizable ethylenically unsaturated groups can be used as long as gelation does not occur. Such polyfunctional ones include ethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate, and 1,6-hexanediol di (meth) acrylate. , Trimethylolpropane di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, divinylbenzene, diisopropenylbenzene, trivinylbenzene, etc. . These can be used alone or in combination, in order to adjust the hardness of the coating film after pre-curing and the final resist hardness in the case of resist ink, or dispersibility, solubility, printability, etc. It is used for adjustment of workability in the process of using resist ink.
本発明では(A)成分は上記例示したようなモノマーを用いたリビングラジカル重合法により合成される。 In the present invention, the component (A) is synthesized by a living radical polymerization method using the monomers exemplified above.
リビングラジカル重合法は、成長ラジカルを可逆的に安定なドーマント種に導く事を特徴とする重合方法であり、通常のラジカル重合法と比較して二分子停止反応が起りにくく、分散度(Mw/Mn)が小さい重合体が得られるものである。また、開始基と単量体の仕込み比により得られる重合体の分子量が決定されるので分子量の設定が容易となるものである。 The living radical polymerization method is a polymerization method characterized in that a growth radical is reversibly led to a stable dormant species. Compared with a normal radical polymerization method, the bimolecular termination reaction is less likely to occur, and the dispersity (Mw / A polymer having a small Mn) is obtained. Moreover, since the molecular weight of the polymer obtained is determined by the charge ratio of the initiating group and the monomer, the molecular weight can be easily set.
リビングラジカル重合法は、ニトロキシド化合物等の安定ラジカルによる解離−結合機構によるものと、有機ハロゲン化合物のハロゲン原子を遷移金属錯体により引き抜く事で可逆的なラジカル化が起る原子移動ラジカル重合法によるものと、ジチオエステル化合物等の連鎖移動剤(RAFT剤)へのラジカル付加と分裂が可逆的に起こり交換反応が起る可逆的付加−分裂連鎖移動重合法によるものに大別できるが、モノマーの適応範囲が広いことから原子移動ラジカル重合法又は可逆的付加−分裂連鎖移動重合法を採用することが好ましい。 Living radical polymerization methods are based on dissociation-bonding mechanisms using stable radicals such as nitroxide compounds, and on atom transfer radical polymerization methods in which reversible radicalization occurs by extracting halogen atoms of organic halogen compounds with transition metal complexes. And radical transfer to a chain transfer agent (RAFT agent) such as a dithioester compound, and can be broadly divided into those by reversible addition-fragmentation chain transfer polymerization method in which exchange reaction occurs reversibly. Since the range is wide, it is preferable to employ an atom transfer radical polymerization method or a reversible addition-fragmentation chain transfer polymerization method.
原子移動ラジカル重合法では、遷移金属錯体の遷移金属の酸化により、有機ハロゲン化合物の炭素−ハロゲン結合からハロゲン原子が遷移金属に可逆的引き抜かれる事で成長ラジカルが発生する反応と、この成長ラジカルが通常のラジカル重合と同様にモノマーとの成長反応を起こす反応と、高酸化状態となった前記遷移金属錯体の遷移金属が可逆的に還元されて炭素−ハロゲン結合が再生する反応とが生じ、これらの反応の速い平衡により、従来のラジカル重合に見られる二分子停止反応が抑制され、分子量分布の狭い、分子量の制御されたポリマーが得られるものである。 In the atom transfer radical polymerization method, a reaction in which a growth radical is generated by reversibly extracting a halogen atom from a carbon-halogen bond of an organic halogen compound to a transition metal by oxidation of a transition metal of a transition metal complex, Like normal radical polymerization, a reaction that causes a growth reaction with the monomer and a reaction that reversibly reduces the transition metal of the transition metal complex in a highly oxidized state to regenerate the carbon-halogen bond occur. Due to the fast equilibrium of this reaction, the bimolecular termination reaction seen in conventional radical polymerization is suppressed, and a polymer with a narrow molecular weight distribution and a controlled molecular weight can be obtained.
この原子移動ラジカル重合法に用いられる遷移金属錯体としては、周期表の7族から11族に属する遷移金属の錯体が有効であり、このような金属としては銅、ルテニウム、鉄、ニッケル、ロジウム、パラジウム、レニウムなどが例示できる。 As the transition metal complex used in this atom transfer radical polymerization method, a transition metal complex belonging to Groups 7 to 11 of the periodic table is effective, and as such a metal, copper, ruthenium, iron, nickel, rhodium, Examples include palladium and rhenium.
このうち銅錯体を用いた原子移動ラジカル重合系では、遷移金属錯体として、例えば塩化第一銅、臭化第一銅などの一価銅の化合物と窒素系の多座配位子の錯体を単独で用い、或いは複数種を併用することができる。このとき窒素系多座配位子の錯体は銅化合物に対する配位数以上添加されるが、通常銅化合物1molに対して1〜10mol添加される。窒素系多座配位子としては、例えば下記構造式(1)〜(10)に示すものを用いることができる。 Among these, in the atom transfer radical polymerization system using a copper complex, as a transition metal complex, for example, a monovalent copper compound such as cuprous chloride and cuprous bromide and a complex of a nitrogen-based multidentate ligand are used alone. Can be used in combination, or multiple types can be used in combination. At this time, the complex of the nitrogen-based multidentate ligand is added in an amount equal to or more than the coordination number with respect to the copper compound, but usually 1 to 10 mol is added to 1 mol of the copper compound. As the nitrogen-based multidentate ligand, for example, those shown in the following structural formulas (1) to (10) can be used.
R1:H、t−C4H9、n−C7H15又はn−C9H19
R2:n−C3H7、5−C9H19又はn−C5H11
R3:H又はPh(フェニル基)
R4:H又はCH3
また、ルテニウム錯体を用いた原子移動ラジカル重合系では、アルミニウムアルコキシド類の存在下で、遷移金属錯体として二価のルテニウム錯体を用いることができ、このような遷移金属錯体としては、下記構造式(11)〜(13)に示すものが挙げられる。尚、式中のPhはフェニル基を示す。
[RuCl2(PPh3)3]…(11)
[RuH2(PPh3)4]…(12)
R 1 : H, t-C 4 H 9 , n-C 7 H 15 or n-C 9 H 19
R 2: n-C 3 H 7, 5-C 9 H 19 or n-C 5 H 11
R 3 : H or Ph (phenyl group)
R 4 : H or CH 3
In addition, in an atom transfer radical polymerization system using a ruthenium complex, a divalent ruthenium complex can be used as a transition metal complex in the presence of aluminum alkoxides. As such a transition metal complex, the following structural formula ( 11) to (13). In the formula, Ph represents a phenyl group.
[RuCl 2 (PPh 3 ) 3 ] (11)
[RuH 2 (PPh 3 ) 4 ] (12)
また、ニッケル錯体を用いた原子移動ラジカル重合系では、遷移金属錯体として二価若しくは0価のニッケルのホスフィン錯体を用いることができ、このような遷移金属錯体としては、下記構造式(14)〜(18)に示すものを挙げることができる。尚、式中のPhはフェニル基を示す。
[NiBr2(PPh3)2]…(14)
[NiBr2(PnBu3)2]…(15)
[Ni(PPh3)4]…(16)
[NiCO2(PPh3)2]…(17)
In addition, in an atom transfer radical polymerization system using a nickel complex, a divalent or zero-valent nickel phosphine complex can be used as a transition metal complex. Examples of such a transition metal complex include the following structural formulas (14) to (14) to (18) can be mentioned. In the formula, Ph represents a phenyl group.
[NiBr 2 (PPh 3 ) 2 ] (14)
[NiBr 2 (PnBu 3 ) 2 ] (15)
[Ni (PPh 3 ) 4 ] (16)
[NiCO 2 (PPh 3 ) 2 ] (17)
また、鉄錯体を用いた原子移動ラジカル重合系では、遷移金属錯体として二価の鉄のホスフィン錯体を用いることができる。このような遷移金属錯体としては例えば下記構造式(19)に示すものを挙げることができる。尚、式中のPhはフェニル基を示す。またXはハロゲンを示し、例えばCl、Br等である。
[FeX2(PPh3)2]…(19)
このような原子移動ラジカル重合法に用いられる開始剤としてはハロゲン原子を含むと共にこのハロゲン原子が引き抜かれることによりラジカルを生成するものを用いることができ、このラジカルの生成により反応が開始される。よって、開始剤の添加量は、所望のポリマーの数平均分子量Mnと開始剤に含まれるハロゲン原子の数とにより決定される。
In an atom transfer radical polymerization system using an iron complex, a divalent iron phosphine complex can be used as a transition metal complex. Examples of such a transition metal complex include those represented by the following structural formula (19). In the formula, Ph represents a phenyl group. X represents halogen, for example, Cl, Br or the like.
[FeX 2 (PPh 3 ) 2 ] (19)
As the initiator used in such an atom transfer radical polymerization method, one that contains a halogen atom and generates a radical when the halogen atom is extracted can be used, and the reaction is initiated by the generation of the radical. Therefore, the addition amount of the initiator is determined by the number average molecular weight Mn of the desired polymer and the number of halogen atoms contained in the initiator.
このような開始剤としては、例えば下記構造式(20)に示すもや、スルホクロライド類等を用いることができる。尚、式中のXは塩素又は臭素を示す。またA1〜A3は、ハロゲン原子Xが引き抜かれた際に炭素ラジカルが生成しやすい置換基であり、ハロゲン原子(X)、カルボニル基、ニトリル基、フェニル基(Ph)などが挙げられる。 As such an initiator, for example, as shown in the following structural formula (20), sulfochlorides and the like can be used. In the formula, X represents chlorine or bromine. A 1 to A 3 are substituents that easily generate a carbon radical when the halogen atom X is extracted, and examples include a halogen atom (X), a carbonyl group, a nitrile group, and a phenyl group (Ph).
このような開始剤の具体例としては、例えば構造式(20)に相当するものとして、CX4、CHX3、CH2X2等のハロアルカン類;CX3COCH3、CHX2COPh等のハロケトン類;CH3CH(CN)X等のハロニトリル類;CH3CH(Ph)X、CH2(Ph)X等のハロアルキルベンゼン類;CX3CO2CH3、CHX2CO2CH3、CH3CH(CO2CH3)X、CH3CH(CO2CH2CH3)X、CH3CH(CO2C(CH3)3)X、CH3C(CH3)(CO2CH3)X、CH3C(CH3)(CO2CH2CH3)X、CH3C(CO2Et)2X、CH3C(CH3)(CO2CH3)CH2CH(CO2CH3)X、CH3C(CH3)(CO2CH3)CH2C(CH2)(CO2CH3)X等のハロエステル類が挙げられる。 Specific examples of such initiators include, for example, haloalkanes such as CX 4 , CHX 3 and CH 2 X 2 ; haloketones such as CX 3 COCH 3 and CHX 2 COPh, corresponding to the structural formula (20). Halonitriles such as CH 3 CH (CN) X; haloalkylbenzenes such as CH 3 CH (Ph) X and CH 2 (Ph) X; CX 3 CO 2 CH 3 , CHX 2 CO 2 CH 3 , and CH 3 CH (CO 2 CH 3 ) X, CH 3 CH (CO 2 CH 2 CH 3 ) X, CH 3 CH (CO 2 C (CH 3 ) 3 ) X, CH 3 C (CH 3 ) (CO 2 CH 3 ) X , CH 3 C (CH 3) (CO 2 CH 2 CH 3) X, CH 3 C (CO 2 Et) 2 X, CH 3 C (CH 3) (CO 2 CH 3) CH 2 CH (CO 2 CH 3 ) X, CH 3 C (CH 3 ) (CO 2 CH 3 ) CH 2 C (CH 2 ) (CO 2 CH 3 ) Haloesters such as X.
またスルホニルクロライド類として、CH3SO2Cl、CCl3SO2Cl、PhSO2Cl、CH3OPhSO2Cl、ClPhSO2Cl等のスルホニルクロライド類が挙げられる。 Examples of the sulfonyl chlorides include sulfonyl chlorides such as CH 3 SO 2 Cl, CCl 3 SO 2 Cl, PhSO 2 Cl, CH 3 OPhSO 2 Cl, and ClPhSO 2 Cl.
原子価移動ラジカル重合法によるリビングラジカル重合は、重合に供されるモノマーを含む重合反応系中に、上記のような遷移金属錯体と開始剤とを投入することで行うことができ、このとき無溶剤若しくは溶媒中で行うことができる。 Living radical polymerization by the valence transfer radical polymerization method can be performed by introducing a transition metal complex and an initiator as described above into a polymerization reaction system containing a monomer to be polymerized. It can be carried out in a solvent or solvent.
溶媒を用いる場合には、例えば水、エタノール、プロピルアルコール、イソプロピルアルコール、ブチルアルコール、イソブチルアルコール、2−ブチルアルコール、ヘキサノール、エチレングリコール等の直鎖、分岐、2級あるいは多価のアルコール類;メチルエチルケトン、シクロヘキサノン等のケトン類;トルエン、キシレン等の芳香族炭化水素類;スワジールシリーズ(丸善石油化学社製)、ソルベッソシリーズ(エクソン・ケミカル社製)等の石油系芳香族系混合溶剤;セロソルブ、ブチルセロソルブ等のセロソルブ類;カルビトール、ブチルカルビトール等のカルビトール類;プロピレングリコールメチルエーテル等のプロピレングリコールアルキルエーテル類;ジプロピレングリコールメチルエーテル等のポリプロピレングリコールアルキルエーテル類;酢酸エチル、酢酸ブチル、セロソルブアセテート、ブチルセロゾルブアセテート、ブチルカルビトールアセテート、プロピレングリコールモノメチルエーテルアセテート等の酢酸エステル類;ジアルキルグリコールエーテル類等を用いることができる。このような有機溶剤は一種のみを用い或いは二種以上を適宜互いに組み合わせて使用することができる。 In the case of using a solvent, for example, water, ethanol, propyl alcohol, isopropyl alcohol, butyl alcohol, isobutyl alcohol, 2-butyl alcohol, hexanol, ethylene glycol and other linear, branched, secondary or polyhydric alcohols; methyl ethyl ketone Ketones such as cyclohexanone; Aromatic hydrocarbons such as toluene and xylene; Petroleum aromatic mixed solvents such as Swazil series (manufactured by Maruzen Petrochemical Co., Ltd.) and Solvesso series (manufactured by Exxon Chemical Co., Ltd.); Cellosolve Cellosolves such as butyl cellosolve; Carbitols such as carbitol and butylcarbitol; Propylene glycol alkyl ethers such as propylene glycol methyl ether; Polypropylene glycol such as dipropylene glycol methyl ether Lumpur alkyl ethers; can be used dialkyl glycol ethers; ethyl acetate, butyl acetate, cellosolve acetate, butyl cellosolve sol blanking acetate, butyl carbitol acetate, acetic acid esters such as propylene glycol monomethyl ether acetate. Such organic solvents can be used alone or in combination of two or more.
このときの反応温度は0℃〜200℃の範囲とすることができ、また反応は通常、窒素、アルゴンなどの不活性ガス雰囲気下で行われる。 The reaction temperature at this time can be in the range of 0 ° C. to 200 ° C., and the reaction is usually performed in an inert gas atmosphere such as nitrogen or argon.
また、可逆的付加−分裂連鎖移動重合法(RAFT重合法)では、ラジカル重合反応系にジチオエステル化合物に代表されるRAFT剤を投入することによりリビングラジカル重合を生じさせるものである。 In the reversible addition-fragmentation chain transfer polymerization method (RAFT polymerization method), living radical polymerization is caused by introducing a RAFT agent typified by a dithioester compound into a radical polymerization reaction system.
RAFT剤としては上記のように分子内にC=S不飽和基を有するジチオエステル類を用いることができ、具体的には下記構造式(21)に示すものを挙げることができる。 As the RAFT agent, dithioesters having a C═S unsaturated group in the molecule as described above can be used, and specific examples include those represented by the following structural formula (21).
ここで、構造式(21)中のRは下記構造式(21a)〜(21g)のいずれかを示し、Zは下記構造式(21h)〜(21o)のいずれかを示す。 Here, R in the structural formula (21) represents any of the following structural formulas (21a) to (21g), and Z represents any of the following structural formulas (21h) to (21o).
可逆的付加−分裂連鎖移動重合法によるリビングラジカル重合は、重合反応に供されるモノマーに必要に応じて適宜の重合開始剤が含有された通常のラジカル重合反応系中に上記のようなRAFT剤を投入することで行うことができ、またこのとき無溶剤若しくは溶媒中で行うことができる。 The living radical polymerization by the reversible addition-fragmentation chain transfer polymerization method is a RAFT agent as described above in a normal radical polymerization reaction system in which an appropriate polymerization initiator is contained as necessary in the monomer to be subjected to the polymerization reaction. In this case, the reaction can be carried out without solvent or in a solvent.
溶媒を用いる場合には、例えば水、エタノール、プロピルアルコール、イソプロピルアルコール、ブチルアルコール、イソブチルアルコール、2−ブチルアルコール、ヘキサノール、エチレングリコール等の直鎖、分岐、2級あるいは多価のアルコール類;メチルエチルケトン、シクロヘキサノン等のケトン類;トルエン、キシレン等の芳香族炭化水素類;スワジールシリーズ(丸善石油化学社製)、ソルベッソシリーズ(エクソン・ケミカル社製)等の石油系芳香族系混合溶剤;セロソルブ、ブチルセロソルブ等のセロソルブ類;カルビトール、ブチルカルビトール等のカルビトール類;プロピレングリコールメチルエーテル等のプロピレングリコールアルキルエーテル類;ジプロピレングリコールメチルエーテル等のポリプロピレングリコールアルキルエーテル類;酢酸エチル、酢酸ブチル、セロソルブアセテート、ブチルセロゾルブアセテート、ブチルカルビトールアセテート、プロピレングリコールモノメチルエーテルアセテート等の酢酸エステル類;ジアルキルグリコールエーテル類等を用いることができる。このような有機溶剤は一種のみを用い或いは二種以上を適宜互いに組み合わせて使用することができる。 In the case of using a solvent, for example, water, ethanol, propyl alcohol, isopropyl alcohol, butyl alcohol, isobutyl alcohol, 2-butyl alcohol, hexanol, ethylene glycol and other linear, branched, secondary or polyhydric alcohols; methyl ethyl ketone Ketones such as cyclohexanone; Aromatic hydrocarbons such as toluene and xylene; Petroleum aromatic mixed solvents such as Swazil series (manufactured by Maruzen Petrochemical Co., Ltd.) and Solvesso series (manufactured by Exxon Chemical Co., Ltd.); Cellosolve Cellosolves such as butyl cellosolve; Carbitols such as carbitol and butylcarbitol; Propylene glycol alkyl ethers such as propylene glycol methyl ether; Polypropylene glycol such as dipropylene glycol methyl ether Lumpur alkyl ethers; can be used dialkyl glycol ethers; ethyl acetate, butyl acetate, cellosolve acetate, butyl cellosolve sol blanking acetate, butyl carbitol acetate, acetic acid esters such as propylene glycol monomethyl ether acetate. Such organic solvents can be used alone or in combination of two or more.
また、反応温度は0℃〜200℃の範囲とすることができ、通常、窒素、アルゴンなどの不活性ガス雰囲気下で行われる。 Moreover, reaction temperature can be made into the range of 0 to 200 degreeC, and it is normally performed in inert gas atmosphere, such as nitrogen and argon.
(A)成分は上記のようなリビングラジカル重合法により生成するものであるが、このとき(A)成分中にアルカリ可溶性基を導入してアルカリ可溶型とする方法としては、分子内に一つのラジカル重合性二重結合と一つ以上のアルカリ可溶性基を併有する単量体をリビングラジカル重合法により共重合する方法と、リビングラジカル重合法により得られる重合体に予め適宜の反応性基を導入しておいて、これに上記反応性基と反応する官能基とアルカリ可溶性基を併有する化合物、若しくは上記反応性基と反応、結合することでカルボキシル基を生する化合物を反応させる方法とが挙げられる。ここで、アルカリ可溶性基としては、カルボキシル基、フェノール性水酸基、スルホン酸基、リン酸基等を挙げることができる。 The component (A) is produced by the living radical polymerization method as described above. At this time, as a method of introducing an alkali-soluble group into the component (A) to make an alkali-soluble type, there is one in the molecule. A monomer having both two radical polymerizable double bonds and one or more alkali-soluble groups is copolymerized by the living radical polymerization method, and an appropriate reactive group is previously added to the polymer obtained by the living radical polymerization method. Introducing a compound having both a functional group that reacts with the reactive group and an alkali-soluble group, or a method of reacting and combining with the reactive group to react with a compound that generates a carboxyl group Can be mentioned. Here, examples of the alkali-soluble group include a carboxyl group, a phenolic hydroxyl group, a sulfonic acid group, and a phosphoric acid group.
この(A)成分としては感光性を有するものを用いることができるが、感光性を有しないものを用いることもできる。ここで感光性とは、適宜の光重合開始剤の存在下で紫外線、可視光線、赤外線、電子線等のエネルギー線の照射を受けて重合反応を生じさせる性質を意味する。 As the component (A), those having photosensitivity can be used, but those having no photosensitivity can also be used. Here, the photosensitivity means a property that causes a polymerization reaction upon irradiation with energy rays such as ultraviolet rays, visible rays, infrared rays, and electron beams in the presence of an appropriate photopolymerization initiator.
このような(A)成分の具体例としては、下記の(A1)成分乃至(A3)成分を挙げることができる。 Specific examples of such component (A) include the following components (A1) to (A3).
(A1)側鎖にカルボキシル基を有する重合体。 (A1) A polymer having a carboxyl group in the side chain.
(A2)上記(A1)成分のカルボキシル基の一部に、分子内に少なくとも一つのエチレン性二重結合と一つのカルボキシル基と反応し得る反応基を有する化合物(d)を反応させて得られる重合体。 (A2) Obtained by reacting a part of the carboxyl group of component (A1) with a compound (d) having a reactive group capable of reacting with at least one ethylenic double bond and one carboxyl group in the molecule. Polymer.
(A3)側鎖にエポキシ基を有する重合体を生成した後に、前記エポキシ基の全部若しくは一部に飽和若しくは不飽和のモノカルボン酸(e)を反応させ、この生成物中の水酸基の全部若しくは一部に多塩基酸無水物(f)を反応させて得られる重合体。 (A3) After producing a polymer having an epoxy group in the side chain, all or part of the epoxy group is reacted with a saturated or unsaturated monocarboxylic acid (e), and all or all of the hydroxyl groups in the product are reacted. A polymer obtained by partially reacting a polybasic acid anhydride (f).
上記(A1)成分は、少なくとも1個の共重合可能なエチレン性不飽和基を有する化合物を重合させるにあたり、重合に供されるモノマー成分の少なくとも一種或いは全部として、分子内に一つのエチレン性二重結合と少なくとも一つのカルボキシル基を有する化合物を用い、この重合を上記のようなリビングラジカル重合法にて行うことで得ることができる。 The component (A1) contains at least one monomeric component having at least one copolymerizable ethylenically unsaturated group, and at least one or all of the monomer components subjected to the polymerization, Using a compound having a heavy bond and at least one carboxyl group, this polymerization can be carried out by the living radical polymerization method as described above.
この分子内に一つのエチレン性二重結合と少なくとも一つのカルボキシル基を有する化合物としては、例えばアクリル酸、メタクリル酸、アクリル酸二量体、桂皮酸等;無水コハク酸、無水マレイン酸、無水フタル酸、テトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、エンドメチレンテトラヒドロ無水フタル酸、メチルエンドメチレンテトラヒドロ無水フタル酸、無水イタコン酸等の二塩基酸無水物とヒドロキシエチル(メタ)アクリレート、ヒドロキシプロピル(メタ)アクリレート、ヒドロキシブチル(メタ)アクリレート、ポリエチレングリコールモノ(メタ)アクリレート、グリセリンジ(メタ)アクリレート、トリメチロールプロパンジ(メタ)アクリレート、ペンタエリスリトールトリ(メタ)アクリレート、ジペンタエリスリトールペンタ(メタ)アクリレート、トリペンタエリスリトールヘプタ(メタ)アクリレート等の1分子中に1個の水酸基を含むエチレン性不飽和基を有する化合物とを反応させて得られるハーフエステル類;コハク酸、マレイン酸、フタル酸、テトラヒドロフタル酸、ヘキサヒドロフタル酸、メチルテトラヒドロフタル酸、メチルヘキサヒドロフタル酸、エンドメチレンテトラヒドロフタル酸、メチルエンドメチレンテトラヒドロフタル酸、イタコン酸等の二塩基酸とグリシジル(メタ)アクリレート、β−メチルグリシジル(メタ)アクリレート、(3,4−エポキシシクロヘキシル)メチル(メタ)アクリレート、4−ヒドロキシブチル(メタ)アクリレートモノグリシジルエーテル等の1分子中に1個のエポキシ基を含むエチレン性不飽和基を有する化合物とを反応させて得られるハーフエステル類等が挙げられる。 Examples of the compound having one ethylenic double bond and at least one carboxyl group in the molecule include acrylic acid, methacrylic acid, acrylic acid dimer, cinnamic acid and the like; succinic anhydride, maleic anhydride, phthalic anhydride, and the like. Dibasic acid anhydrides such as acid, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, itaconic anhydride And hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, polyethylene glycol mono (meth) acrylate, glycerin di (meth) acrylate, trimethylolpropane di (meth) acrylate Reaction with compounds having an ethylenically unsaturated group containing one hydroxyl group in one molecule such as rate, pentaerythritol tri (meth) acrylate, dipentaerythritol penta (meth) acrylate, tripentaerythritol hepta (meth) acrylate Half esters obtained by succinic acid, maleic acid, phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, methyltetrahydrophthalic acid, methylhexahydrophthalic acid, endomethylenetetrahydrophthalic acid, methylendomethylenetetrahydrophthalic acid, Dibasic acids such as itaconic acid and glycidyl (meth) acrylate, β-methylglycidyl (meth) acrylate, (3,4-epoxycyclohexyl) methyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate Examples include half esters obtained by reacting a compound having an ethylenically unsaturated group containing one epoxy group in one molecule such as tomonoglycidyl ether.
このような化合物は単独で又は複数種を併用して用いることができる。このうち特に好ましい化合物として(メタ)アクリル酸を挙げることができる。 Such compounds can be used alone or in combination of two or more. Among these, (meth) acrylic acid can be mentioned as a particularly preferred compound.
ここで、(A1)成分を原子移動ラジカル重合法にて合成する場合には、系中にカルボキシル基が存在すると遷移金属原子がカルボキシル基と反応してしまい、2分子停止反応が抑制できないため、単量体におけるカルボキシル基に予めターシャリーブチル基、トリメチルシリル基等の保護基を結合させておき、重合後に保護基を脱離することでカルボキシル基を生成させることが好ましい。 Here, when the component (A1) is synthesized by an atom transfer radical polymerization method, if a carboxyl group is present in the system, the transition metal atom reacts with the carboxyl group, and the bimolecular termination reaction cannot be suppressed. It is preferable that a protective group such as a tertiary butyl group or a trimethylsilyl group is previously bonded to the carboxyl group in the monomer, and the protective group is eliminated after polymerization to generate the carboxyl group.
また、上記のようにして得られる(A1)成分に更に上記(d)成分(分子内に少なくとも一つのエチレン性二重結合と一つのカルボキシル基と反応し得る反応基を有する化合物)を反応させて、上記(A2)成分を生成する場合、(d)成分としては、カルボキシル基と反応し得る反応基としてグリシジル基、イソシアネート基等を有するものを挙げることができる。具体的には、グリシジル基を有する化合物としては、グリシジル(メタ)アクリレート、(3,4−エポキシジシクロヘキシル)メチル(メタ)アクリレート、β−メチルグリシジル(メタ)アクリレート、4−ヒドロキシブチル(メタ)アクリレートグリシジルエーテル、アリルグリシジルエーテル、エポキシ化ステアリルアクリレート(新日本理化株式会社製;品番「リカレジンESA」)等を、イソシアネート基を有する化合物としては2−アクリロイルオキシエチルイソシアネート(昭和電工株式会社製;品番「カレンズAOI」、2−メタクリロイルオキシエチルイソシアネート(昭和電工株式会社;品番「カレンズMOI」)等を挙げることができる。 Further, the component (A1) obtained as described above is further reacted with the component (d) (compound having a reactive group capable of reacting with at least one ethylenic double bond and one carboxyl group in the molecule). And when producing | generating said (A2) component, what has a glycidyl group, an isocyanate group, etc. as a reactive group which can react with a carboxyl group as (d) component can be mentioned. Specifically, as a compound having a glycidyl group, glycidyl (meth) acrylate, (3,4-epoxydicyclohexyl) methyl (meth) acrylate, β-methylglycidyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate Glycidyl ether, allyl glycidyl ether, epoxidized stearyl acrylate (manufactured by Shin Nippon Rika Co., Ltd .; product number “Licar Resin ESA”) and the like are 2-acryloyloxyethyl isocyanate (manufactured by Showa Denko KK; product number “ Karenz AOI ”, 2-methacryloyloxyethyl isocyanate (Showa Denko KK; product number“ Karenz MOI ”) and the like.
この(A2)成分は、(d)成分に由来するエチレン性二重結合を有することから、感光性が付与されている。 This component (A2) has photosensitivity because it has an ethylenic double bond derived from the component (d).
この(d)成分は単独で又は複数種を併用して用いることができるが、特にグシシジル(メタ)アクリレートを用いることが好ましい。 Although this (d) component can be used individually or in combination of multiple types, it is particularly preferable to use glycidyl (meth) acrylate.
(A1)成分に対して(d)成分を反応させるにあたっては、(d)成分を反応させる事により生成する(A2)成分の酸価が20〜200mgKOH/gの範囲となるように(d)成分の付加量を設定するのが好ましい。 In reacting the component (d) with the component (A1), the acid value of the component (A2) produced by reacting the component (d) is in the range of 20 to 200 mgKOH / g (d). It is preferable to set the added amount of the components.
また、この反応をさせるにあたっては、この反応を促進させるために触媒を使用することが好ましい。触媒としてはベンジルジメチルアミン、トリエチルアミン等の第3級アミン類、トリメチルベンジルアンモニウムクロライド、メチルトリエチルアンモニウムクロライド等の第4級アンモニウム塩類若しくはトリフェニルフォスフィン、トリフェニルスチビン等が挙げられる。この触媒の使用量は、反応原料混合物の総量(最終的に反応系中に含まれる原料の総量)、すなわち(A1)成分の生成に使用するモノマー類、溶媒、リビングラジカル重合法に用いる触媒および開始剤、(d)成分、(d)成分の反応に使用する触媒、(d)成分の反応に使用する重合禁止剤等の総量に対して好ましくは0.1〜10重量%の範囲とする。 Moreover, when making this reaction, it is preferable to use a catalyst in order to promote this reaction. Examples of the catalyst include tertiary amines such as benzyldimethylamine and triethylamine, quaternary ammonium salts such as trimethylbenzylammonium chloride and methyltriethylammonium chloride, triphenylphosphine, and triphenylstibine. The amount of the catalyst used is the total amount of the reaction raw material mixture (finally the total amount of raw materials contained in the reaction system), that is, the monomers used for the production of the component (A1), the solvent, the catalyst used in the living radical polymerization method, and The total amount of initiator, component (d), catalyst used for reaction of component (d), polymerization inhibitor used for reaction of component (d), etc. is preferably in the range of 0.1 to 10% by weight. .
またこの反応中に(A1)成分の重合反応が生じることを防止する目的で重合禁止剤を使用するのが好ましい。重合禁止剤としてはハイドロキノン、ハイドロキノンモノメチルエーテル等が挙げられる。その使用量は、上記反応原料混合物の総量に対して0.01〜1重量%が好ましい。 In addition, a polymerization inhibitor is preferably used for the purpose of preventing the polymerization reaction of the component (A1) during this reaction. Examples of the polymerization inhibitor include hydroquinone and hydroquinone monomethyl ether. The amount used is preferably 0.01 to 1% by weight based on the total amount of the reaction raw material mixture.
この(A1)成分と(d)成分との反応条件は、常法により、好ましくは60〜150℃、特に好ましくは80〜120℃の反応温度で反応させる。又、反応時間は好ましくは5〜60時間である。 The reaction conditions of this (A1) component and (d) component are made to react by the conventional method, Preferably it is 60-150 degreeC, Most preferably, it is made to react at the reaction temperature of 80-120 degreeC. The reaction time is preferably 5 to 60 hours.
また、(A3)成分を得るための上記側鎖にエポキシ基を有する重合体は、少なくとも1個の共重合可能なエチレン性不飽和基を有する化合物を重合させるにあたり、重合に供されるモノマー成分の少なくとも一種或いは全部として、分子内に一つのエチレン性二重結合と少なくとも一つのエポキシ基を有する化合物を用い、この重合を上記のようなリビングラジカル重合法にて行うことで得ることができる。 In addition, the polymer having an epoxy group in the side chain for obtaining the component (A3) is a monomer component that is subjected to polymerization in polymerizing a compound having at least one copolymerizable ethylenically unsaturated group. At least one or all of these compounds can be obtained by using a compound having one ethylenic double bond and at least one epoxy group in the molecule, and conducting the polymerization by the living radical polymerization method as described above.
このような分子内に一つのエチレン性二重結合と少なくとも一つのエポキシ基を有する化合物としては、グリシジル(メタ)アクリレート、(3,4−エポキシジシクロヘキシル)メチル(メタ)アクリレート、β−メチルグリシジル(メタ)アクリレート、4−ヒドロキシブチル(メタ)アクリレートグリシジルエーテル、アリルグリシジルエーテル、エポキシ化ステアリルアクリレート(新日本理化株式会社製;品番「リカレジンESA」)等を挙げることができる。これらの化合物は単独で又は複数種を併用して用いることができるが、特にグシシジル(メタ)アクリレートを用いることが好ましい。 Examples of the compound having one ethylenic double bond and at least one epoxy group in the molecule include glycidyl (meth) acrylate, (3,4-epoxydicyclohexyl) methyl (meth) acrylate, β-methylglycidyl ( Examples thereof include (meth) acrylate, 4-hydroxybutyl (meth) acrylate glycidyl ether, allyl glycidyl ether, epoxidized stearyl acrylate (manufactured by Shin Nippon Rika Co., Ltd .; product number “Rikaresin ESA”) and the like. These compounds can be used alone or in combination of a plurality of types, but it is particularly preferable to use glycidyl (meth) acrylate.
また、上記(e)成分(飽和若しくは不飽和のモノカルボン酸)のうち、飽和モノカルボン酸としては、例えば蟻酸、酢酸、プロピオン酸、n−酪酸、イソ酪酸、吉草酸、イソ吉草酸、ピバリン酸、パルミチン酸、ステアリン酸、安息香酸、グリコール酸、乳酸、グリセリン酸、ジメチロールプロピオン酸、ジメチロール酢酸、ジメチロール酪酸、ジメチロール吉草酸、ジメチロールカプロン酸等を用いることができる。 Among the components (e) (saturated or unsaturated monocarboxylic acid), examples of the saturated monocarboxylic acid include formic acid, acetic acid, propionic acid, n-butyric acid, isobutyric acid, valeric acid, isovaleric acid, and pivalin. Acid, palmitic acid, stearic acid, benzoic acid, glycolic acid, lactic acid, glyceric acid, dimethylolpropionic acid, dimethylolacetic acid, dimethylolbutyric acid, dimethylolvaleric acid, dimethylolcaproic acid, and the like can be used.
また、(e)成分として特に不飽和モノカルボン酸を用いる場合には、生成される(A3)成分に感光性を付与することができる。この不飽和モノカルボン酸としては例えばアクリル酸、メタクリル酸、アクリル酸二量体、桂皮酸等;無水コハク酸、無水マレイン酸、無水フタル酸、テトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、エンドメチレンテトラヒドロ無水フタル酸、メチルエンドメチレンテトラヒドロ無水フタル酸、無水イタコン酸等の二塩基酸無水物とヒドロキシエチル(メタ)アクリレート、ヒドロキシプロピル(メタ)アクリレート、ヒドロキシブチル(メタ)アクリレート、ポリエチレングリコールモノ(メタ)アクリレート、グリセリンジ(メタ)アクリレート、トリメチロールプロパンジ(メタ)アクリレート、ペンタエリスリトールトリ(メタ)アクリレート、ジペンタエリスリトールペンタ(メタ)アクリレート、トリペンタエリスリトールヘプタ(メタ)アクリレート等の1分子中に1個の水酸基を含むエチレン性不飽和基を有する化合物とを反応させて得られるハーフエステル類;コハク酸、マレイン酸、フタル酸、テトラヒドロフタル酸、ヘキサヒドロフタル酸、メチルテトラヒドロフタル酸、メチルヘキサヒドロフタル酸、エンドメチレンテトラヒドロフタル酸、メチルエンドメチレンテトラヒドロフタル酸、イタコン酸等の二塩基酸とグリシジル(メタ)アクリレート、β−メチルグリシジル(メタ)アクリレート、(3,4−エポキシシクロヘキシル)メチル(メタ)アクリレート、4−ヒドロキシブチル(メタ)アクリレートモノグリシジルエーテル等の1分子中に1個のエポキシ基を含むエチレン性不飽和基を有する化合物とを反応させて得られるハーフエステル類等が挙げられる。 Moreover, when using unsaturated monocarboxylic acid as (e) component, photosensitivity can be provided to (A3) component produced | generated. Examples of the unsaturated monocarboxylic acid include acrylic acid, methacrylic acid, acrylic acid dimer, cinnamic acid, etc .; succinic anhydride, maleic anhydride, phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydroanhydride Dibasic acid anhydrides such as phthalic acid, methylhexahydrophthalic anhydride, endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, itaconic anhydride and hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, Hydroxybutyl (meth) acrylate, polyethylene glycol mono (meth) acrylate, glycerin di (meth) acrylate, trimethylolpropane di (meth) acrylate, pentaerythritol tri (meth) acrylate, dipe Half esters obtained by reacting a compound having an ethylenically unsaturated group containing one hydroxyl group in one molecule such as taerythritol penta (meth) acrylate and tripentaerythritol hepta (meth) acrylate; succinic acid, Dibasic acids such as maleic acid, phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, methyltetrahydrophthalic acid, methylhexahydrophthalic acid, endomethylenetetrahydrophthalic acid, methylendomethylenetetrahydrophthalic acid, itaconic acid and glycidyl (meta ) Acrylate, β-methylglycidyl (meth) acrylate, (3,4-epoxycyclohexyl) methyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate monoglycidyl ether, etc., containing one epoxy group in one molecule D Half esters obtained by reacting a compound having an alkylene unsaturated group.
この(e)成分は、単独で又は複数種を併用して用いることができるが、特に(メタ)アクリル酸を用いることが好ましい。 Although this (e) component can be used individually or in combination of multiple types, it is especially preferable to use (meth) acrylic acid.
また、上記(f)成分(多塩基酸無水物は)は、側鎖にエポキシ基を有する重合体と(e)成分との反応により生じる水酸基と反応させることでカルボキシル基を導入し、重合体にアルカリ可溶性を付与することができる。この(f)成分としては、例えば無水コハク酸、無水マレイン酸、無水フタル酸、テトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、エンドメチレンテトラヒドロ無水フタル酸、メチルエンドメチレンテトラヒドロ無水フタル酸、無水イタコン酸等の二塩基酸無水物、トリメリット酸無水物を挙げることができる。また1個以上の酸無水物基を有する化合物もゲル化の起らない範囲で少量使用でき、例えば無水ピロメリット酸、ビフェニルテトラカルボン酸二無水物、ジフェニルエーテルテトラカルボン酸二無水物、ジフェニルスルフォンテトラカルボン酸二無水物、ベンゾフェノンテトラカルボン酸二無水物、ジフェニルメタンテトラカルボン酸二無水物、ブタンテトラカルボン酸二無水物、エチレングリコールビス(アンヒドロトリメリテート)、5−(2,5−ジオキソテトラヒドロ−3−フラニル)−3−メチル−3−シクロヘキセン−1,2−ジカルボン酸無水物(大日本インキ化学工業株式会社製「B−4400」)などが挙げられる。 In addition, the component (f) (polybasic acid anhydride) introduces a carboxyl group by reacting with a hydroxyl group produced by the reaction between a polymer having an epoxy group in the side chain and the component (e), and a polymer. Alkali solubility can be imparted to. Examples of the component (f) include succinic anhydride, maleic anhydride, phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, endomethylenetetrahydrophthalic anhydride. And dibasic acid anhydrides such as methylendomethylenetetrahydrophthalic anhydride and itaconic anhydride, and trimellitic anhydride. A compound having one or more acid anhydride groups can also be used in a small amount within the range where gelation does not occur. For example, pyromellitic anhydride, biphenyltetracarboxylic dianhydride, diphenylethertetracarboxylic dianhydride, diphenylsulfonetetra Carboxylic dianhydride, benzophenone tetracarboxylic dianhydride, diphenylmethane tetracarboxylic dianhydride, butane tetracarboxylic dianhydride, ethylene glycol bis (anhydrotrimellitate), 5- (2,5-dioxo And tetrahydro-3-furanyl) -3-methyl-3-cyclohexene-1,2-dicarboxylic acid anhydride (“B-4400” manufactured by Dainippon Ink & Chemicals, Inc.).
(A3)成分の生成にあたり、側鎖にエポキシ基を有する重合体に対して(e)成分を反応させるにあたっては、(e)成分を、前記重合体の1エポキシ当量に対して0.7〜1.2化学当量の範囲で用いることが好ましい。 In the production of the component (A3), when the component (e) is reacted with the polymer having an epoxy group in the side chain, the component (e) is added in an amount of 0.7 to 1 epoxy equivalent of the polymer. It is preferable to use in the range of 1.2 chemical equivalents.
また、この反応を促進させるために触媒を使用することが好ましい。触媒としてはベンジルジメチルアミン、トリエチルアミン等の第3級アミン類、トリメチルベンジルアンモニウムクロライド、メチルトリエチルアンモニウムクロライド等の第4級アンモニウム塩類若しくはトリフェニルフォスフィン、トリフェニルスチビン等が挙げられる。この触媒の使用量は、反応原料混合物の総量(最終的に反応系中に含まれる原料の総量)、すなわち(A3)成分の生成に使用するモノマー類、溶媒、リビングラジカル重合法に用いる触媒および開始剤、(e)成分、(f)成分、(e)成分の反応に使用する触媒、(e)成分の反応に使用する重合禁止剤等の総量に対して好ましくは0.1〜10重量%の範囲とする。 Moreover, it is preferable to use a catalyst in order to promote this reaction. Examples of the catalyst include tertiary amines such as benzyldimethylamine and triethylamine, quaternary ammonium salts such as trimethylbenzylammonium chloride and methyltriethylammonium chloride, triphenylphosphine, and triphenylstibine. The amount of this catalyst used is the total amount of the reaction raw material mixture (finally the total amount of raw materials contained in the reaction system), that is, the monomers used for the production of the component (A3), the solvent, the catalyst used in the living radical polymerization method, and Preferably 0.1 to 10 weights with respect to the total amount of initiator, component (e), component (f), catalyst used for reaction of component (e), polymerization inhibitor used for reaction of component (e), etc. % Range.
またこの反応中における側鎖にエポキシ基を有する重合体の重合を防止する目的で重合禁止剤を使用することが好ましい。重合禁止剤としてハイドロキノン若しくはハイドロキノンモノメチルエーテル等が挙げられる。その使用量は、上記の反応原料混合物の総量に対して0.01〜1重量%が好ましい。 In addition, it is preferable to use a polymerization inhibitor for the purpose of preventing polymerization of a polymer having an epoxy group in the side chain during this reaction. Examples of the polymerization inhibitor include hydroquinone and hydroquinone monomethyl ether. The amount used is preferably 0.01 to 1% by weight based on the total amount of the reaction raw material mixture.
この側鎖にエポキシ基を有する重合体と(e)成分との反応条件は、常法により、好ましくは60〜150℃、特に好ましくは80〜120℃の反応温度で反応させる。又、反応時間は好ましくは5〜60時間である。 The reaction conditions of the polymer having an epoxy group in the side chain and the component (e) are preferably reacted at a reaction temperature of 60 to 150 ° C., particularly preferably 80 to 120 ° C. according to a conventional method. The reaction time is preferably 5 to 60 hours.
次いで、(f)成分を反応させるにあたっては、(A3)成分に付与すべき所望の酸価に応じ、上記(e)成分との反応により得られる中間生成物の1水酸基当量に対して(f)成分を0.1〜1.5化学当量の範囲で用いることが好ましい。 Next, in reacting the component (f), depending on the desired acid value to be imparted to the component (A3), the (f) component (f) is equivalent to 1 hydroxyl group equivalent of the intermediate product obtained by the reaction with the component (e). ) Component is preferably used in the range of 0.1 to 1.5 chemical equivalents.
また、この反応を促進するために上記(e)成分との反応の場合と同様の触媒を用い、また上記中間生成物の重合を防止する目的で上記(e)成分との反応の場合と同様の重合禁止剤を用いることが好ましい。この触媒や重合禁止剤としては、上記(e)成分との反応において添加したものをそのまま使用することができる。 In order to promote this reaction, the same catalyst as in the reaction with the component (e) is used, and the reaction with the component (e) is performed for the purpose of preventing the polymerization of the intermediate product. It is preferable to use the polymerization inhibitor. As this catalyst and polymerization inhibitor, those added in the reaction with the component (e) can be used as they are.
この中間生成物と(f)成分との反応条件は、常法により、好ましくは20〜150℃、特に好ましくは50〜100℃の反応温度で反応させる。又、反応時間は好ましくは1〜30時間である。 The reaction conditions of this intermediate product and (f) component are made to react at a reaction temperature of preferably 20 to 150 ° C., particularly preferably 50 to 100 ° C. by a conventional method. The reaction time is preferably 1 to 30 hours.
上記のような(A1)成分、(A2)成分(A3)成分は、いずれも組成物をエッチングレジストインキ、ソルダーレジストインキとして調製するために用いることができるが、特に(A1)成分及び(A2)成分は1段階又は2段階の合成によりカルボキシル基及びエチレン性二重結合を含む重合体を得ることができ、これによりエッチングレジストインキとしては十分な塗膜性能を有する組成物を調製することができるため、組成物をエッチングレジストインキとして調製するために好適に用いることができる。また、(A3)成分は3段階の合成を要するが、より多くのカルボキシル基及びエチレン性不飽和二重結合を導入可能であり、塗膜性能の要求レベルが高い永久塗膜としての性能を向上させる事が容易であることから、特に組成物をソルダーレジストインキとして調製する場合に好適に用いることができる。 The (A1) component and the (A2) component (A3) component as described above can be used to prepare the composition as an etching resist ink or a solder resist ink, but in particular, the (A1) component and the (A2) ) Component can obtain a polymer containing a carboxyl group and an ethylenic double bond by a one-step or two-step synthesis, thereby preparing a composition having sufficient coating performance as an etching resist ink. Therefore, it can be suitably used for preparing the composition as an etching resist ink. The component (A3) requires a three-step synthesis, but can introduce more carboxyl groups and ethylenically unsaturated double bonds, improving the performance as a permanent coating with a high level of coating performance requirements. In particular, it can be suitably used when the composition is prepared as a solder resist ink.
上記のような(A)成分は、リビングラジカル重合法により得られることから、分散度(Mw/Mn)が1.8以下になるように生成することができるものである。ここで、前記分散度が1.8よりも大きくなると所望の分子量より高分子量の成分と低分子量の成分が系中に入るため、高分子量成分により未露光部の現像性が低下し、また低分子量成分により乾燥塗膜の光硬化性は向上するものの指触タックが悪化する。すなわち、指触タックと光硬化性、現像性の両立が難しくなってしまうものである。 Since the component (A) as described above is obtained by a living radical polymerization method, it can be produced so that the dispersity (Mw / Mn) is 1.8 or less. Here, when the degree of dispersion is greater than 1.8, a component having a higher molecular weight than a desired molecular weight and a component having a lower molecular weight enter the system. Although the photocurability of the dried coating film is improved by the molecular weight component, the finger tack is deteriorated. That is, it becomes difficult to achieve both finger touch, photo-curing property, and developability.
ここで、上記分散度の理論上の下限値は1であるが、分散度を1とすることは困難であり、実際上の分散度の下限値は1.05である。 Here, the theoretical lower limit of the dispersity is 1, but it is difficult to set the dispersity to 1, and the actual lower limit of the dispersity is 1.05.
ここで、上記の分散度は(A)成分の合成の際のリビングラジカル重合の条件を変更することで調整することが可能であり、このリビングラジカル重合の条件を適宜変更することで(A)成分の分散度が所望のものとなるようにすることができるものである。すなわち、リビングラジカル重合系の分子量分布を決定するパラメーターとしては、ドーマント種の可逆活性化における活性化速度定数や成長ラジカル濃度があり、ドーマント種の活性化速度定数が大きいリビングラジカル重合系を選ぶ事で、得られる重合体の分子量分布を狭くし、分散度を小さくすることができる。 Here, the degree of dispersion can be adjusted by changing the living radical polymerization conditions during the synthesis of the component (A). By appropriately changing the living radical polymerization conditions (A) The degree of dispersion of the components can be made as desired. In other words, the parameters that determine the molecular weight distribution of the living radical polymerization system include the activation rate constant and growth radical concentration in the reversible activation of the dormant species, and the living radical polymerization system with a large activation rate constant of the dormant species should be selected. Thus, the molecular weight distribution of the obtained polymer can be narrowed and the degree of dispersion can be reduced.
また、成長ラジカル濃度を下げることで2分子停止反応の発生頻度を抑制できることにより、分子量分布を狭くして分散度を小さくすることもできる。例えばラジカル源である重合開始剤の添加量を少なくする。また、原子移動ラジカル重合法であれば開始剤である遷移金属錯体と対応する高酸化状態の遷移金属錯体を系中に予め添加することも成長ラジカル濃度を下げるのに有効であり、例えば開始剤として臭化第一銅などの一価銅の化合物と窒素系の多座配位子の錯体を用いる場合に、臭化第二銅などの二価銅の化合物による同様の錯体を添加するものである。 In addition, since the occurrence frequency of the bimolecular termination reaction can be suppressed by lowering the growth radical concentration, the molecular weight distribution can be narrowed and the degree of dispersion can be reduced. For example, the amount of polymerization initiator that is a radical source is reduced. In addition, in the case of the atom transfer radical polymerization method, adding a transition metal complex in a highly oxidized state corresponding to a transition metal complex as an initiator in advance to the system is also effective for lowering the growth radical concentration. In the case of using a complex of a monovalent copper compound such as cuprous bromide and a nitrogen-based multidentate ligand, a similar complex of a divalent copper compound such as cupric bromide is added. is there.
また、この(A)成分の数平均分子量は、1000〜200000の範囲とすることが好ましく、より好ましくは2000〜100000である。このような範囲において現像性と指触タック性が確保されるものである。 The number average molecular weight of the component (A) is preferably in the range of 1000 to 200000, more preferably 2000 to 100000. Within such a range, developability and finger tackiness are ensured.
更に、(A)成分に十分なアルカリ溶解性を付与するためには、その酸価が20〜200mgKOH/gの範囲であることが好ましく、より好ましくは40〜170mgKOH/gの範囲である。 Furthermore, in order to impart sufficient alkali solubility to the component (A), the acid value is preferably in the range of 20 to 200 mgKOH / g, more preferably in the range of 40 to 170 mgKOH / g.
この(A)成分は、組成物中に適宜の割合で含有されるが、組成物の全量(組成物に稀釈剤(H)が含有されている場合には、稀釈剤(H)を除いた組成物の全量)に対して、10〜90重量%の範囲で含有させるものであり、これにより、組成物の良好な感光性及び作業性、並びに最終的に形成される硬化皮膜の良好な物性が確保されるものである。 This component (A) is contained in an appropriate ratio in the composition, but the total amount of the composition (when the diluent (H) is contained in the composition, the diluent (H) is excluded). The total amount of the composition) is contained in the range of 10 to 90% by weight, whereby good photosensitivity and workability of the composition, and good physical properties of the finally formed cured film. Is ensured.
(B)光重合性単量体
この(B)成分としては(メタ)アクリレート単量体等の光重合性単量体を用いることができ、例えば、2−ヒドロキシエチル(メタ)アクリレート、2−ヒドロキシプロピル(メタ)アクリレート、N−ビニルピロリドン、(メタ)アクリロイルモルフォリン、メトキシテトラエチレングリコール(メタ)アクリレート、メトキシポリエチレングリコール(メタ)アクリレート、ポリエチレングリコールジ(メタ)アクリレート、N,N−ジメチル(メタ)アクリルアミド、N−メチロール(メタ)アクリルアミド、N,N−ジメチルアミノプロピル(メタ)アクリルアミド、N,N−ジメチルアミノエチル(メタ)アクリレート、N,N−ジメチルアミノプロピル(メタ)アクリレート、メラミン(メタ)アクリレート、ジエチレングリコールジ(メタ)アクリレート、トリエチレングリコールジ(メタ)アクリレート、プロピレングリコールジ(メタ)アクリレート、トリプロピレングリコールジ(メタ)アクリレート、フェノキシエチル(メタ)アクリレート、テトラヒドロフルフリル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート、トリメチロールプロパンジ(メタ)アクリレート、トリメチロールプロパントリ(メタ)アクリレート、ペンタエリスリトールトリ(メタ)アクリレート、ペンタエリスリトールテトラ(メタ)アクリレート、ジペンタエリスリトールペンタ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート、イソボニル(メタ)アクリレート、シクロペンタニルモノ(メタ)アクリレート、シクロペンテニルモノ(メタ)アクリレート、シクロペンタニルジ(メタ)アクリレート、シクロペンテニルジ(メタ)アクリレート;多塩基酸とヒドロキジアルキル(メタ)アクリレートとのモノ−、ジ−、トリ−又はそれ以上のポリエステル等;ポリエステル(メタ)アクリレートやウレタン(メタ)アクリレート等を挙げることができる。
(B) Photopolymerizable monomer As this (B) component, photopolymerizable monomers, such as a (meth) acrylate monomer, can be used, for example, 2-hydroxyethyl (meth) acrylate, 2- Hydroxypropyl (meth) acrylate, N-vinylpyrrolidone, (meth) acryloylmorpholine, methoxytetraethylene glycol (meth) acrylate, methoxypolyethylene glycol (meth) acrylate, polyethylene glycol di (meth) acrylate, N, N-dimethyl ( (Meth) acrylamide, N-methylol (meth) acrylamide, N, N-dimethylaminopropyl (meth) acrylamide, N, N-dimethylaminoethyl (meth) acrylate, N, N-dimethylaminopropyl (meth) acrylate, melamine ( Meta) Acryle , Diethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, tripropylene glycol di (meth) acrylate, phenoxyethyl (meth) acrylate, tetrahydrofurfuryl (meth) acrylate , Cyclohexyl (meth) acrylate, trimethylolpropane di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, Dipentaerythritol hexa (meth) acrylate, isobornyl (meth) acrylate, cyclopentanyl mono (meth) acrylate Cyclopentenyl mono (meth) acrylate, cyclopentanyl di (meth) acrylate, cyclopentenyl di (meth) acrylate; mono-, di-, tri- or higher polyesters of polybasic acids and hydroxyalkyl (meth) acrylates Etc .: Examples thereof include polyester (meth) acrylate and urethane (meth) acrylate.
このような(B)成分は、組成物を希釈して塗布しやすい状態とすると共に、この組成物の酸価を調整して組成物全体のアルカリ可溶性を調整する機能も有し得る。 Such a component (B) may have a function of adjusting the acid value of the composition to adjust the alkali solubility of the whole composition by diluting the composition to make it easy to apply.
またこの(B)成分は、上記(A)成分として感光性を有しないものを用いる場合には、組成物に感光性を付与するための必須成分となるものであり、また上記(A)成分が感光性を有する場合でも、更に(B)成分を含有させれば組成物に更なる感光性を付与することができる。 The component (B) is an essential component for imparting photosensitivity to the composition when the component (A) has no photosensitivity, and the component (A) Even if it has photosensitivity, further photosensitivity can be imparted to the composition by further containing the component (B).
上記組成物中に(B)成分を配合する場合には、組成物全量(後述する(H)成分(希釈剤)として有機溶剤を用いる場合にはこの有機溶剤を除く全量)に対して、50質量%以下の範囲で含有させることが好ましい。これを50質量%を超えて含有させる場合には、組成物の乾燥塗膜の表面粘着性が強くなり過ぎ、パターンを描いたネガマスクを乾燥塗膜表面に直接当てがって露光するときにネガマスクの汚損等の問題を生じるおそれがある。また、(B)成分を含有させる場合の含有量の下限は特に制限されないが、良好な皮膜特性を得るための感光性を付与するためには下限を1重量%とすることが好ましい。 When (B) component is mix | blended in the said composition, it is 50 with respect to the composition whole quantity (when using an organic solvent as (H) component (diluent) mentioned later, this organic solvent remove | excludes this organic solvent)). It is preferable to make it contain in the range of the mass% or less. When the content exceeds 50% by mass, the surface adhesiveness of the dry coating film of the composition becomes too strong, and the negative mask is exposed when the negative mask on which the pattern is drawn is directly applied to the surface of the dry coating film. May cause problems such as fouling. Further, the lower limit of the content when the component (B) is contained is not particularly limited, but the lower limit is preferably 1% by weight in order to impart photosensitivity for obtaining good film properties.
(C)光重合開始剤
この(C)成分としては、特に制限されず、紫外線、可視光線、赤外線、近赤外線、電子線等の所望のエネルギー線露光用のものが用いられる。具体的には、例えば、ベンゾイン、ベンゾインメチルエーテル、ベンゾインエチルエーテル、ベンゾインイソプロピルエーテル等のベンゾインとそのアルキルエーテル類;アセトフェノン、2,2−ジメトキシ−2−フェニルアセトフェノン、2,2−ジエトキシ−2−フェニルアセトフェノン、1,1−ジクロロアセトフェノン、1−ヒドロキシシクロヘキシルフェニルケトン等のアセトフェノン類;2−メチルアントラキノン、2−アミルアントラキノン等のアントラキノン類;2,4−ジメチルチオキサントン、2,4−ジエチルチオキサントン、2−クロロチオキサントン、2,4−ジイソプロピルチオキサントン、1−クロロ−4−プロポキシチオキサントン等のチオキサントン類;アセトフェノンジメチルケタール、ベンジルジメチルケタール等のケタール類;ベンゾフェノン、3,3−ジメチル−4−メトキシベンゾフェノン、3,3',4,4'−テトラー(t−ブチルペルオキシルカルボニル)ベンゾフェノン、4−ベンゾイル−4'−メチルジフェニルスルフィド等のベンゾフェノン類又はキサントン類;2−メチル−1[4−(メチルチオ)フェニル]−2−モルフォリノプロパン−1−オン、2−ベンジル−2−ジメチルアミノ−1−(4−モルフォリノフェニル)−ブタノン−1、4,4'−ビス−ジエチルアミノベンゾフェノン等の窒素原子を含むもの;2,4,6−トリメチルベンゾイルジフェニルホスフィンオキシド等が挙げられる。
(C) Photopolymerization initiator The component (C) is not particularly limited, and those for desired energy ray exposure such as ultraviolet rays, visible rays, infrared rays, near infrared rays, and electron beams are used. Specifically, for example, benzoin such as benzoin, benzoin methyl ether, benzoin ethyl ether, and benzoin isopropyl ether and alkyl ethers thereof; acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxy-2- Acetophenones such as phenylacetophenone, 1,1-dichloroacetophenone, 1-hydroxycyclohexyl phenyl ketone; anthraquinones such as 2-methylanthraquinone and 2-amylanthraquinone; 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, 2 -Thioxanthones such as chlorothioxanthone, 2,4-diisopropylthioxanthone, 1-chloro-4-propoxythioxanthone; acetophenone dimethyl ketal, benzyldi Ketals such as tilketal; benzophenone, 3,3-dimethyl-4-methoxybenzophenone, 3,3 ′, 4,4′-tetra (t-butylperoxylcarbonyl) benzophenone, 4-benzoyl-4′-methyldiphenyl sulfide Benzophenones or xanthones such as 2-methyl-1 [4- (methylthio) phenyl] -2-morpholinopropan-1-one, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -Those containing a nitrogen atom such as butanone-1,4,4'-bis-diethylaminobenzophenone; 2,4,6-trimethylbenzoyldiphenylphosphine oxide and the like.
これらの(C)成分は組成物中に一種単独で又は複数種を組み合わせて含有させることができる。 These components (C) can be contained alone or in combination in the composition.
また、これらの(C)成分に加えて、安息香酸系又はp−ジメチルアミノ安息香酸エチルエステル、p−ジメチルアミノ安息香酸イソアミルエステル、2−ジメチルアミノエチルベンゾエート等の第三級アミン系等の公知の光重合促進剤や増感剤等を併用しても良い。また、レーザ露光法用増感剤として7−ジエチルアミノ−4−メチルクマリン、4,6−ジエチル−7−エチルアミノクマリン等のクマリン誘導体、その他カルボシアニン色素系、キサンテン色素系等を適宜選択して配合しても良い。 Further, in addition to these (C) components, benzoic acid-based or tertiary amine-based compounds such as p-dimethylaminobenzoic acid ethyl ester, p-dimethylaminobenzoic acid isoamyl ester, 2-dimethylaminoethylbenzoate, etc. These photopolymerization accelerators and sensitizers may be used in combination. Further, as a sensitizer for laser exposure method, coumarin derivatives such as 7-diethylamino-4-methylcoumarin, 4,6-diethyl-7-ethylaminocoumarin, other carbocyanine dyes, xanthene dyes, etc. are appropriately selected. You may mix.
この(C)成分の組成物中の配合量は適宜設定されるものであるが、組成物の感光性と、得られる硬化皮膜の物性との良好なバランスを得るためには、組成物の全量(後述する(H)成分(希釈剤)として有機溶剤を用いる場合にはこの有機溶剤を除く全量)に対して、0.1〜30質量%の範囲とすることが望ましい。 The blending amount of the component (C) in the composition is appropriately set, but in order to obtain a good balance between the photosensitivity of the composition and the physical properties of the resulting cured film, the total amount of the composition (When using an organic solvent as the component (H) (diluent) described later, the total amount excluding the organic solvent) is preferably in the range of 0.1 to 30% by mass.
(G)多官能エポキシ化合物
この(G)成分は、組成物中に配合することによりこの組成物に熱硬化性を付与し、また広い現像幅を付与することができる。現像幅とは、現像可能性を保持し得る予備乾燥条件の幅を意味するものであり、予備乾燥管理幅あるいは予備乾燥許容範囲ともいう。
(G) Polyfunctional epoxy compound The component (G) can be provided with thermosetting properties and a wide development width by being blended in the composition. The development width means a range of predrying conditions that can maintain developability, and is also referred to as a predrying management width or a predrying allowable range.
この(G)成分としては、例えば溶剤難溶性エポキシ化合物、汎用の溶剤可溶性エポキシ化合物等を用いることができる。具体的には、例えば、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビスフェノールA型エポキシ樹脂、ビスフェノールA−ノボラック型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、トリグリシジルイソシアヌレート、ビフェニル型エポキシ樹脂(例えばジャパンエポキシレジン(株)製の品番「YX4000」)、ソルビトールポリグリシジルエーテル、N−グリシジル型エポキシ樹脂、脂環式エポキシ樹脂(例えばダイセル化学工業(株)製の品番「EHPE−3150」)、ポリオールポリグリシジルエーテル化合物、グリシジルエステル化合物、N−グリシジル型エポキシ樹脂、トリス(ヒドロキジフェニル)メタンベースの多官能エポキシ樹脂(例えば日本化薬社製の品番「EPPN−502H」、ダウケミカル社製の品番「TACTIX−742」「XD−9053」等)、水添ビスフェノールA型エポキシ樹脂、ジシクロペンタジエン−フェノール型エポキシ樹脂、ナフタレン型エポキシ樹脂、エポキシ基を有するビニル重合ポリマー、多官能グリシジル化合物のポリイソシアネート変性物等が挙げられる。これらは一種単独で又は複数種を組み合わせて用いることができる。 As this (G) component, a solvent hardly soluble epoxy compound, a general purpose solvent soluble epoxy compound, etc. can be used, for example. Specifically, for example, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A type epoxy resin, bisphenol A-novolac type epoxy resin, bisphenol F type epoxy resin, triglycidyl isocyanurate, biphenyl type epoxy resin (for example, Product number “YX4000” manufactured by Japan Epoxy Resin Co., Ltd.), sorbitol polyglycidyl ether, N-glycidyl type epoxy resin, alicyclic epoxy resin (for example, product number “EHPE-3150” manufactured by Daicel Chemical Industries, Ltd.), polyol Polyglycidyl ether compound, glycidyl ester compound, N-glycidyl type epoxy resin, tris (hydroxydiphenyl) methane based polyfunctional epoxy resin (for example, product number “EPPN-50 manufactured by Nippon Kayaku Co., Ltd.) H ”, product numbers“ TACTIX-742 ”and“ XD-9053 ”manufactured by Dow Chemical Co., Ltd.), hydrogenated bisphenol A type epoxy resin, dicyclopentadiene-phenol type epoxy resin, naphthalene type epoxy resin, vinyl polymerization having an epoxy group Examples thereof include polymers and polyisocyanate-modified products of polyfunctional glycidyl compounds. These can be used individually by 1 type or in combination of multiple types.
これらのうちでも、特にトリグリシジルイソシアヌレート、ビフェニル型エポキシ樹脂(例えばジャパンエポキシレジン(株)製の品番「YX4000」)、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビスフェノールA型エポキシ樹脂、ビスフェノールA−ノボラック型エポキシ樹脂等を用いることが望ましい。 Among these, triglycidyl isocyanurate, biphenyl type epoxy resin (for example, product number “YX4000” manufactured by Japan Epoxy Resin Co., Ltd.), phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A type epoxy resin, bisphenol It is desirable to use A-novolak type epoxy resin or the like.
このような(G)成分を組成物中に配合する場合は、その配合量は、紫外線硬化性樹脂組成物の全量(後述する(H)成分(希釈剤)として有機溶剤を用いる場合にはこの有機溶剤を除く全量)に対して、0.1〜50質量%の範囲であることが望ましく、特に0.1〜30質量%の範囲において、優れた熱硬化性と広い現像幅とが付与される。 When such (G) component is mix | blended in a composition, the compounding quantity is this amount when using an organic solvent as the whole quantity ((H) component (diluent) mentioned later) of ultraviolet curable resin composition. The total amount excluding the organic solvent) is preferably in the range of 0.1 to 50% by mass, and particularly in the range of 0.1 to 30% by mass, excellent thermosetting and wide development width are imparted. The
(H)稀釈剤
この(H)成分としては、有機溶剤を用いることができ、例えば水、エタノール、プロピルアルコール、イソプロピルアルコール、ブチルアルコール、イソブチルアルコール、2−ブチルアルコール、ヘキサノール、エチレングリコール等の直鎖、分岐、2級あるいは多価のアルコール類;メチルエチルケトン、シクロヘキサノン等のケトン類;トルエン、キシレン等の芳香族炭化水素類;スワジールシリーズ(丸善石油化学社製)、ソルベッソシリーズ(エクソン・ケミカル社製)等の石油系芳香族系混合溶剤;セロソルブ、ブチルセロソルブ等のセロソルブ類;カルビトール、ブチルカルビトール等のカルビトール類;プロピレングリコールメチルエーテル等のプロピレングリコールアルキルエーテル類;ジプロピレングリコールメチルエーテル等のポリプロピレングリコールアルキルエーテル類;酢酸エチル、酢酸ブチル、セロソルブアセテート、ブチルセロゾルブアセテート、ブチルカルビトールアセテート、プロピレングリコールモノメチルエーテルアセテート等の酢酸エステル類;ジアルキルグリコールエーテル類等が挙げられる。
(H) Diluent As this (H) component, an organic solvent can be used, for example, water, ethanol, propyl alcohol, isopropyl alcohol, butyl alcohol, isobutyl alcohol, 2-butyl alcohol, hexanol, ethylene glycol, etc. Chain, branched, secondary or polyhydric alcohols; ketones such as methyl ethyl ketone and cyclohexanone; aromatic hydrocarbons such as toluene and xylene; swazil series (manufactured by Maruzen Petrochemical Co., Ltd.), solvesso series (exxon chemical) Petroleum aromatic mixed solvent such as Cellosolve, cellosolves such as butylcellosolve; carbitols such as carbitol and butylcarbitol; propylene glycol alkyl ethers such as propylene glycol methyl ether; Examples include polypropylene glycol alkyl ethers such as coal methyl ether; acetates such as ethyl acetate, butyl acetate, cellosolve acetate, butyl cellosolve acetate, butyl carbitol acetate, and propylene glycol monomethyl ether acetate; dialkyl glycol ethers.
このような(H)成分は一種のみを用い或いは二種以上を適宜互いに組み合わせて使用することができる。 Such (H) component can use only 1 type, or can use it in combination of 2 or more types as appropriate.
この(H)成分は、組成物の樹脂成分を溶解、希釈して組成物を液状として塗布可能な状態にするものであり、また組成物の塗布後には乾燥により揮散して乾燥塗膜を造膜させる。この(H)成分として配合される有機溶剤は、特に組成物を希アルカリ溶液で現像可能なレジストインキとして調製する場合には組成物中に含有させることが好ましく、このとき予備乾燥時に速やかに揮散し、乾燥塗膜に残存しないように適宜選択して配合することが好ましい。 This component (H) dissolves and dilutes the resin component of the composition so that the composition can be applied as a liquid, and after application of the composition, it volatilizes by drying to form a dry coating film. Make a film. The organic solvent blended as the component (H) is preferably contained in the composition, particularly when the composition is prepared as a resist ink that can be developed with a dilute alkaline solution. In addition, it is preferable to select and mix appropriately so as not to remain in the dry coating film.
組成物中に(H)成分を含有させる場合のその配合量は、組成物全量中で5重量%以上とすることが望ましく、これより少ない場合は組成物の塗布が困難となり易い。尚、この好適な配合量は塗布方法により異なるので、選択される塗布方法に応じて適宜調節することが好ましい。 When the component (H) is contained in the composition, the blending amount is desirably 5% by weight or more based on the total amount of the composition. When the amount is less than this, application of the composition tends to be difficult. In addition, since this suitable compounding quantity changes with coating methods, it is preferable to adjust suitably according to the coating method selected.
(I)他の成分
組成物中には、特にフォトソルダーレジストインキとして調製する場合には、上記各成分のほかに、例えばカプロラクタム、オキシム、マロン酸エステル等でブロックされたトリレンジイソシアネート、モルホリンジイソシアネート、イソホロンジイソシアネート、ヘキサメチレンジイソシアネート系のブロックドイソシアネート、及びn−ブチル化メラミン樹脂、イソブチル化メラミン樹脂、ブチル化尿素樹脂、ブチル化メラミン尿素共縮合樹脂、ベンゾグアテミン系共縮合樹脂等のアミノ樹脂等の熱硬化成分、及び紫外線硬化性エポキシアクリレート又は紫外線硬化性エポキシメタクリレート、例えばビスフェノールA型、フェノールノボラック型、クレゾールノボラック型、脂環型等エポキシ樹脂にアクリル酸又はメタクリル酸を付加したもの、並びにスチレン−(メタ)アクリル酸−(メタ)アクリル酸エステル共重合体、スチレン−マレイン酸樹脂、ジアリルフタレート樹脂、フェノキシ樹脂、メラミン樹脂、ウレタン樹脂、フッ素樹脂等の高分子化合物を加えることができる。
(I) Other components In the composition, particularly when prepared as a photo solder resist ink, in addition to the above components, for example, tolylene diisocyanate, morpholine diisocyanate blocked with caprolactam, oxime, malonic acid ester, etc. , Isophorone diisocyanate, hexamethylene diisocyanate type blocked isocyanate, and amino resins such as n-butylated melamine resin, isobutylated melamine resin, butylated urea resin, butylated melamine urea cocondensation resin, benzoguatemine type cocondensation resin, etc. Thermosetting component and UV curable epoxy acrylate or UV curable epoxy methacrylate, such as bisphenol A type, phenol novolac type, cresol novolac type, alicyclic type epoxy resin, acrylic acid or meta High additions such as those with added crylic acid, styrene- (meth) acrylic acid- (meth) acrylic acid ester copolymer, styrene-maleic acid resin, diallyl phthalate resin, phenoxy resin, melamine resin, urethane resin, fluorine resin, etc. Molecular compounds can be added.
またこの組成物には、必要に応じて、さらにイミダゾール誘導体、ポリアミン類、グアナミン類、3級アミン類、4級アンモニウム塩類、ポリフェノール類、多塩基酸無水物、メラミン、ジシアンジアミド等のエポキシ樹脂硬化剤及び硬化促進剤類;硫酸バリウム、酸化珪素、タルク、クレー、炭酸カルシウム等の充填剤及び着色剤;シリコンやアクリレート共重合体、フッ素系界面活性剤等のレベリング剤;シランカップリング剤等の密着性付与剤;アエロジル等のチクソトロピー剤;ハイドロキノン、ハイドロキノンモノメチルエーテル、ピロガロール、t−ブチルカテコール、フェノチアジン等の重合禁止剤;ハレーション防止剤、難燃剤、消泡剤、酸化防止剤等の各種添加剤;分散安定性を向上させるための界面活性剤や高分子分散剤等を加えても良い。 In addition, this composition may further contain an epoxy resin curing agent such as imidazole derivatives, polyamines, guanamines, tertiary amines, quaternary ammonium salts, polyphenols, polybasic acid anhydrides, melamine, dicyandiamide and the like as necessary. And curing accelerators; fillers and colorants such as barium sulfate, silicon oxide, talc, clay, calcium carbonate; leveling agents such as silicon, acrylate copolymers and fluorosurfactants; adhesion of silane coupling agents, etc. Property imparting agent; thixotropic agent such as aerosil; polymerization inhibitor such as hydroquinone, hydroquinone monomethyl ether, pyrogallol, t-butylcatechol, phenothiazine; various additives such as antihalation agent, flame retardant, antifoaming agent, antioxidant; Surfactant and polymer dispersion to improve dispersion stability Or the like may be added.
[プリント配線板製造用アルカリ現像型感光性レジストインキ組成物の調製方法]
本発明の組成物は、上記の各成分を適宜の手法により混合して調製することができる。例えば、各配合成分及び添加剤等を三本ロール、ボールミル、サンドミル等を用いる公知の混練方法によって調製することができる。
[Preparation Method of Alkali Development Type Photosensitive Resist Ink Composition for Printed Wiring Board Production]
The composition of the present invention can be prepared by mixing each of the above components by an appropriate technique. For example, each compounding component and additive can be prepared by a known kneading method using a three-roll, ball mill, sand mill or the like.
[プリント配線板製造用アルカリ現像型感光性レジストインキ組成物の硬化物及びプリント配線板の作製]
本発明の組成物は、フォトレジストインキ、プリント配線板の層間絶縁材料、カラーフィルター用レジスト等の種々の用途に使用することができ、特にプリント配線板やプリント配線板製造用の積層板等の基板に対して層状に形成して、ソルダーレジストやエッチングレジスト等のレジストパターンを形成するために、好適に使用される。
[Preparation of cured product of alkali development type photosensitive resist ink composition for printed wiring board production and printed wiring board]
The composition of the present invention can be used for various applications such as photoresist inks, interlayer insulating materials for printed wiring boards, resists for color filters, etc., especially for printed wiring boards and laminated boards for producing printed wiring boards. It is preferably used for forming a resist pattern such as a solder resist or an etching resist by forming a layer on the substrate.
基板としては適宜のものを用いることができるが、例えばガラスエポキシ樹脂基板や、ポリイミド基板等からなるフレキシブル基板等、或いはこれらから形成されるプリント配線板等を用いることができる。 An appropriate substrate can be used as the substrate. For example, a glass epoxy resin substrate, a flexible substrate made of a polyimide substrate or the like, or a printed wiring board formed from these substrates can be used.
本発明に係る組成物を使用して基板上にレジストパターンを形成する方法は特に限定されないが、その中で最も一般的な方法を例示すれば以下の通りである。 A method for forming a resist pattern on a substrate using the composition according to the present invention is not particularly limited, and the most general method is exemplified as follows.
例えば、アルカリ現像型レジストインキとして調製された組成物を、基板上に浸漬法、スプレー、スピンコーター、ロールコーター、カーテンコーター又はスクリーン印刷等により塗布した後、(H)成分(希釈剤)である有機溶剤を揮発させるために例えば60〜120℃で予備乾燥を行い、予備乾燥皮膜を形成する。 For example, the composition prepared as an alkali developing resist ink is applied to the substrate by dipping, spraying, spin coater, roll coater, curtain coater, screen printing or the like, and then (H) component (diluent). In order to volatilize the organic solvent, for example, preliminary drying is performed at 60 to 120 ° C. to form a preliminary drying film.
次にパターンを描画したネガマスクを予備乾燥皮膜の塗膜表面に直接又は間接的に当てがい、ケミカルランプ、低圧水銀灯、中圧水銀灯、高圧水銀灯、超高圧水銀灯、キセノンランプ又はメタルハライドランプ等を用いて紫外線を照射した後、現像によりパターンを形成する。そして、(G)成分(多官能エポキシ化合物)を配合している場合には、さらに例えば120〜180℃で30〜90分程度の加熱により熱硬化させることでレジストの皮膜強度、硬度及び耐薬品性等の諸特性を向上させることができるのである。 Next, apply a negative mask with a pattern drawn directly or indirectly to the surface of the pre-dried film, using a chemical lamp, low-pressure mercury lamp, medium-pressure mercury lamp, high-pressure mercury lamp, ultra-high-pressure mercury lamp, xenon lamp, metal halide lamp, etc. After irradiation with ultraviolet rays, a pattern is formed by development. And when (G) component (polyfunctional epoxy compound) is mix | blended, the film strength, hardness, and chemical resistance of a resist are further hardened by heating for about 30 to 90 minutes at 120-180 degreeC, for example. It is possible to improve various properties such as property.
上記現像工程で使用されるアルカリ溶液としては、炭酸ナトリウム水溶液、炭酸カリウム水溶液などを例示することができる。このアルカリ溶液の溶媒としては、水又は水とアルコール系等の親水性のある有機溶媒の混合物を用いることができる。 Examples of the alkaline solution used in the development step include a sodium carbonate aqueous solution and a potassium carbonate aqueous solution. As the solvent of the alkaline solution, water or a mixture of water and an alcohol-based hydrophilic organic solvent can be used.
以下に本発明を実施例に基づいて説明するが、本発明はこれらに限定されるものではない。尚、以下に使用される「部」及び「%」は、特に示さない限り、全て重量基準である。 The present invention will be described below based on examples, but the present invention is not limited thereto. The “parts” and “%” used below are all based on weight unless otherwise indicated.
また、「数平均分子量」、「重量平均分子量」及び「分散度」は、下記測定条件に基づきGPCにより測定されたものである。 The “number average molecular weight”, “weight average molecular weight”, and “dispersion degree” are measured by GPC based on the following measurement conditions.
下記の各合成例で得られた試料を固形分について10mg/mLとなる様にTHF溶液を調製し、各々インジェクション量100μLにて測定した。
測定条件
GPC測定装置:昭和電工社製SHODEX SYSTEM 11
カラム:SHODEX KF−800P、KF−805、KF−803及びKF−801の4本直列
移動層:THF
流量:1mL/分
カラム温度:45℃
検出器:RI
換算:ポリスチレン
下記合成例1〜4並びに比較合成例1〜4のように、(A)成分に対応する重合体を合成した。尚、合成例1,2及び比較合成例1,2はエッチングレジスト用途に適した構造を狙って合成した重合体であり、合成例3,4及び比較合成例3,4はソルダーレジスト用途に適した構造を狙って合成した重合体である。
A THF solution was prepared so that the sample obtained in each of the following synthesis examples had a solid content of 10 mg / mL, and each sample was measured at an injection amount of 100 μL.
Measurement conditions GPC measuring device: SHODEX SYSTEM 11 manufactured by Showa Denko KK
Column: 4 series of SHODEX KF-800P, KF-805, KF-803 and KF-801 Moving layer: THF
Flow rate: 1 mL / min Column temperature: 45 ° C
Detector: RI
Conversion: Polystyrene Polymers corresponding to the component (A) were synthesized as in Synthesis Examples 1 to 4 and Comparative Synthesis Examples 1 to 4 below. Synthetic Examples 1 and 2 and Comparative Synthetic Examples 1 and 2 are polymers synthesized aiming at structures suitable for etching resist applications, and Synthetic Examples 3 and 4 and Comparative Synthetic Examples 3 and 4 are suitable for solder resist applications. It is a polymer synthesized with the aim of the structure.
[アルカリ可溶性重合体の合成]
〔合成例1〕
還流冷却器、温度計、窒素置換用ガラス管及び撹拌機を取り付けた四ツ口フラスコに、メタクリル酸25部、メチルメタクリレート75部、カルビトールアセテート100部、クミルジチオベンゾエート0.28部、アゾビスイソブチロニトリル0.68部を加え、窒素気流下に加熱し、70℃において4時間、可逆的付加−分裂連鎖移動重合法によるリビングラジカル重合を行ない、アルカリ可溶性重合体の50重量%溶液(アルカリ可溶性重合体(A−1)溶液)を得た。
[Synthesis of alkali-soluble polymer]
[Synthesis Example 1]
In a four-necked flask equipped with a reflux condenser, a thermometer, a glass tube for nitrogen substitution and a stirrer, 25 parts of methacrylic acid, 75 parts of methyl methacrylate, 100 parts of carbitol acetate, 0.28 parts of cumyl dithiobenzoate, azo Add 0.68 part of bisisobutyronitrile, heat in a nitrogen stream, perform living radical polymerization by reversible addition-fragmentation chain transfer polymerization method at 70 ° C. for 4 hours, 50% by weight solution of alkali-soluble polymer (Alkali-soluble polymer (A-1) solution) was obtained.
そして、上記溶液の溶媒を除去してアルカリ可溶性重合体(A−1)を得た。このアルカリ可溶性重合体(A−1)の数平均分子量Mnは31500、重量平均分子量Mwは45500、分散度Mw/Mnは1.44であった。また酸価は163mgKOH/gであった。 And the solvent of the said solution was removed and the alkali-soluble polymer (A-1) was obtained. This alkali-soluble polymer (A-1) had a number average molecular weight Mn of 31,500, a weight average molecular weight Mw of 45500, and a dispersity Mw / Mn of 1.44. The acid value was 163 mgKOH / g.
〔合成例2〕
還流冷却器、温度計、及び撹拌機を取り付けた四ツ口フラスコに、上記合成例1で得られたアルカリ可溶性重合体(A−1)100部、グリシジルメタクリレート14.2部、カルビトールアセテート114.2部、ハイドロキノン0.05部、ジメチルベンジルアミン0.2部を加え、100℃で5時間付加反応を行い、アルカリ可溶性重合体の50%溶液(アルカリ可溶性重合体(A−2)溶液)を得た。
[Synthesis Example 2]
In a four-necked flask equipped with a reflux condenser, a thermometer, and a stirrer, 100 parts of the alkali-soluble polymer (A-1) obtained in Synthesis Example 1 above, 14.2 parts glycidyl methacrylate, 114 carbitol acetate 114 .2 parts, 0.05 part of hydroquinone and 0.2 part of dimethylbenzylamine were added, and an addition reaction was performed at 100 ° C. for 5 hours to obtain a 50% solution of an alkali-soluble polymer (alkali-soluble polymer (A-2) solution). Got.
そして、上記溶液の溶媒を除去してアルカリ可溶性重合体(A−2)を得た。このアルカリ可溶性重合体(A−2)の数平均分子量Mnは33000、重量平均分子量Mwは49500、分散度Mw/Mnは1.50であった。また酸価は93mgKOH/gであった。 And the solvent of the said solution was removed and the alkali-soluble polymer (A-2) was obtained. This alkali-soluble polymer (A-2) had a number average molecular weight Mn of 33,000, a weight average molecular weight Mw of 49500, and a dispersity Mw / Mn of 1.50. The acid value was 93 mgKOH / g.
〔合成例3〕
還流冷却器、温度計、窒素置換用ガラス管及び撹拌機を取り付けた四ツ口フラスコに、グリシジルメタクリレート70部、メチルメタクリレート30部、カルビトールアセテート100部、2−ブロモイソ酪酸エチル2.34部、(−)−スパルテイン2.84gを加え反応器内を窒素置換した。続いて臭化第一銅0.17部を加え、窒素気流下に加熱し、70℃において4時間、原子移動ラジカル重合法によるリビングラジカル重合を行った後、窒素気流を止め、ハイドロキノン0.05部、アクリル酸37部、ジメチルベンジルアミン0.2部を加え、100℃で24時間付加反応を行い、続いてテトラヒドロ無水フタル酸38部及びカルビトールアセテート80.2部を加えて100℃で3時間反応させ、アルカリ可溶性重合体の50重量%溶液(アルカリ可溶性重合体(A−3)溶液)を得た。
[Synthesis Example 3]
In a four-necked flask equipped with a reflux condenser, a thermometer, a glass tube for nitrogen substitution and a stirrer, 70 parts of glycidyl methacrylate, 30 parts of methyl methacrylate, 100 parts of carbitol acetate, 2.34 parts of ethyl 2-bromoisobutyrate, (-)-Spartein 2.84 g was added, and the inside of the reactor was purged with nitrogen. Subsequently, 0.17 parts of cuprous bromide was added and heated under a nitrogen stream, and after performing living radical polymerization by an atom transfer radical polymerization method at 70 ° C. for 4 hours, the nitrogen stream was stopped, and hydroquinone 0.05 Part, 37 parts of acrylic acid and 0.2 part of dimethylbenzylamine were added, followed by addition reaction at 100 ° C. for 24 hours. Subsequently, 38 parts of tetrahydrophthalic anhydride and 80.2 parts of carbitol acetate were added, It was made to react for time, and the 50 weight% solution (alkali-soluble polymer (A-3) solution) of the alkali-soluble polymer was obtained.
そして、上記溶液の溶媒を除去してアルカリ可溶性重合体(A−3)を得た。このアルカリ可溶性重合体(A−3)の数平均分子量Mnは6520、重量平均分子量Mwは8800、分散度Mw/Mnは1.35であった。また酸価は77.8mgKOH/gであった。 And the solvent of the said solution was removed and the alkali-soluble polymer (A-3) was obtained. This alkali-soluble polymer (A-3) had a number average molecular weight Mn of 6520, a weight average molecular weight Mw of 8800, and a dispersity Mw / Mn of 1.35. The acid value was 77.8 mgKOH / g.
〔合成例4〕
還流冷却器、温度計、窒素置換用ガラス管及び撹拌機を取り付けた四ツ口フラスコに、グリシジルメタクリレート70部、スチレン30部、カルビトールアセテート100部、クミルジチオベンゾエート5.3部、アゾビスイソブチロニトリル0.64部を加え、窒素気流下に加熱し、70℃において4時間、可逆的付加−分裂連鎖移動重合法によるリビングラジカル重合を行なった後、窒素気流を止め、ハイドロキノン0.05部、アクリル酸37部、ジメチルベンジルアミン0.2部を加え、100℃で24時間付加反応を行い、続いてテトラヒドロ無水フタル酸38部及びカルビトールアセテート81.2部を加えて100℃で3時間反応させ、アルカリ可溶性重合体の50重量%溶液(アルカリ可溶性重合体(A−4)溶液を得た。
[Synthesis Example 4]
A four-necked flask equipped with a reflux condenser, a thermometer, a glass tube for nitrogen substitution, and a stirrer was mixed with 70 parts of glycidyl methacrylate, 30 parts of styrene, 100 parts of carbitol acetate, 5.3 parts of cumyl dithiobenzoate, azobis After adding 0.64 parts of isobutyronitrile and heating in a nitrogen stream, and performing living radical polymerization by reversible addition-fragmentation chain transfer polymerization at 70 ° C. for 4 hours, the nitrogen stream was stopped and hydroquinone 05 parts, 37 parts of acrylic acid and 0.2 parts of dimethylbenzylamine were added, followed by addition reaction at 100 ° C. for 24 hours, followed by addition of 38 parts of tetrahydrophthalic anhydride and 81.2 parts of carbitol acetate at 100 ° C. It was made to react for 3 hours, and the 50 weight% solution (alkali-soluble polymer (A-4) solution of the alkali-soluble polymer was obtained.
そして、上記溶液の溶媒を除去してアルカリ可溶性重合体(A−4)を得た。このアルカリ可溶性重合体(A−4)の数平均分子量Mnは6830、重量平均分子量Mwは8600、分散度Mw/Mnは1.26であった。また酸価は77.4mgKOH/gであった。 And the solvent of the said solution was removed and the alkali-soluble polymer (A-4) was obtained. The number average molecular weight Mn of this alkali-soluble polymer (A-4) was 6830, the weight average molecular weight Mw was 8600, and the dispersity Mw / Mn was 1.26. The acid value was 77.4 mgKOH / g.
〔比較合成例1〕
還流冷却器、温度計、窒素置換用ガラス管及び撹拌機を取り付けた四ツ口フラスコに、メタクリル酸25部、メチルメタクリレート75部、カルビトールアセテート100部、アゾビスイソブチロニトリル1部を加え、窒素気流下に加熱し、70℃において4時間重合を行ない、アルカリ可溶性重合体の50%溶液(アルカリ可溶性重合体(A’−1)溶液)を得た。
[Comparative Synthesis Example 1]
To a four-necked flask equipped with a reflux condenser, a thermometer, a glass tube for nitrogen replacement and a stirrer, add 25 parts of methacrylic acid, 75 parts of methyl methacrylate, 100 parts of carbitol acetate, and 1 part of azobisisobutyronitrile. The mixture was heated under a nitrogen stream and polymerized at 70 ° C. for 4 hours to obtain a 50% solution of an alkali-soluble polymer (alkali-soluble polymer (A′-1) solution).
そして、上記溶液の溶媒を除去してアルカリ可溶性重合体(A’−1)を得た。このアルカリ可溶性重合体(A’−1)の数平均分子量Mnは32000、重量平均分子量Mwは81300、分散度Mw/Mnは2.54であった。また酸価は163mgKOH/gであった。 And the solvent of the said solution was removed and the alkali-soluble polymer (A'-1) was obtained. The number average molecular weight Mn of this alkali-soluble polymer (A′-1) was 32000, the weight average molecular weight Mw was 81300, and the degree of dispersion Mw / Mn was 2.54. The acid value was 163 mgKOH / g.
〔比較合成例2〕
還流冷却器、温度計、及び撹拌機を取り付けた四ツ口フラスコに、アルカリ可溶性重合体(A’−1)100部、グリシジルメタクリレート14.2部、カルビトールアセテート114.2部、ハイドロキノン0.05部、ジメチルベンジルアミン0.2部を加え、100℃で5時間付加反応を行い、アルカリ可溶性重合体の50%溶液(アルカリ可溶性重合体(A’−2)溶液)を得た。
[Comparative Synthesis Example 2]
In a four-necked flask equipped with a reflux condenser, a thermometer, and a stirrer, 100 parts of an alkali-soluble polymer (A′-1), 14.2 parts of glycidyl methacrylate, 114.2 parts of carbitol acetate, 05 parts and 0.2 part of dimethylbenzylamine were added, and an addition reaction was performed at 100 ° C. for 5 hours to obtain a 50% solution of an alkali-soluble polymer (an alkali-soluble polymer (A′-2) solution).
そして、上記溶液の溶媒を除去してアルカリ可溶性重合体(A‘−2)を得た。このアルカリ可溶性重合体(A−2)の数平均分子量Mnは33800、重量平均分子量Mwは86200、分散度Mw/Mnは2.55であった。また酸価は93mgKOH/gであった。 And the solvent of the said solution was removed and the alkali-soluble polymer (A'-2) was obtained. The number average molecular weight Mn of this alkali-soluble polymer (A-2) was 33800, the weight average molecular weight Mw was 86200, and the dispersity Mw / Mn was 2.55. The acid value was 93 mgKOH / g.
〔比較合成例3〕
還流冷却器、温度計、窒素置換用ガラス管及び撹拌機を取り付けた四ツ口フラスコに、グリシジルメタクリレート70部、メチルメタクリレート30部、カルビトールアセテート100部、アゾビスイソブチロニトリル2部を加え、窒素気流下に加熱し、以後1時間ごとにアゾビスイソブチロニトル2部を4回追加しながら70℃において4時間させた後、窒素気流を止め、ハイドロキノン0.05部、アクリル酸37部、ジメチルベンジルアミン0.2部を加え、100℃で24時間付加反応を行い、続いてテトラヒドロ無水フタル酸38部及びカルビトールアセテート83.4部を加えて100℃で3時間反応させ、アルカリ可溶性重合体の50重量%溶液(アルカリ可溶性重合体(A’−3)溶液を得た。
[Comparative Synthesis Example 3]
Add 70 parts of glycidyl methacrylate, 30 parts of methyl methacrylate, 100 parts of carbitol acetate, and 2 parts of azobisisobutyronitrile to a four-necked flask equipped with a reflux condenser, a thermometer, a glass tube for nitrogen substitution and a stirrer. The mixture was heated under a nitrogen stream, and thereafter 2 parts of azobisisobutyronitrile was added 4 times every hour for 4 hours at 70 ° C., then the nitrogen stream was stopped and 0.05 parts of hydroquinone, acrylic acid 37 And 0.2 part of dimethylbenzylamine are added, and an addition reaction is carried out at 100 ° C. for 24 hours. Subsequently, 38 parts of tetrahydrophthalic anhydride and 83.4 parts of carbitol acetate are added and reacted at 100 ° C. for 3 hours. A 50% by weight solution of a soluble polymer (an alkali-soluble polymer (A′-3) solution was obtained.
そして、上記溶液の溶媒を除去してアルカリ可溶性重合体(A’−3)を得た。このアルカリ可溶性重合体(A’−3)の数平均分子量Mnは6730、重量平均分子量Mwは14300、分散度Mw/Mnは2.13であった。また酸価は76.5mgKOH/gであった。 And the solvent of the said solution was removed and the alkali-soluble polymer (A'-3) was obtained. The number average molecular weight Mn of this alkali-soluble polymer (A′-3) was 6730, the weight average molecular weight Mw was 14300, and the degree of dispersion Mw / Mn was 2.13. The acid value was 76.5 mgKOH / g.
〔比較合成例4〕
還流冷却器、温度計、窒素置換用ガラス管及び撹拌機を取り付けた四ツ口フラスコに、グリシジルメタクリレート70部、スチレン30部、カルビトールアセテート100部、アゾビスイソブチロニトリル2部を加え、窒素気流下に加熱し、以後1時間ごとにアゾビスイソブチロニトル2部を4回追加しながら70℃において4時間させた後、窒素気流を止め、ハイドロキノン0.05部、アクリル酸37部、ジメチルベンジルアミン0.2部を加え、100℃で24時間付加反応を行い、続いてテトラヒドロ無水フタル酸38部及びカルビトールアセテート83.6部を加えて100℃で3時間反応させ、アルカリ可溶性重合体の50重量%溶液(アルカリ可溶性重合体(A’−4)溶液を得た。
[Comparative Synthesis Example 4]
To a four-necked flask equipped with a reflux condenser, a thermometer, a glass tube for nitrogen substitution and a stirrer, 70 parts of glycidyl methacrylate, 30 parts of styrene, 100 parts of carbitol acetate, and 2 parts of azobisisobutyronitrile are added, After heating in a nitrogen stream and adding 2 parts of azobisisobutyronitrile 4 hours every hour for 4 hours at 70 ° C., the nitrogen stream was stopped and 0.05 parts of hydroquinone and 37 parts of acrylic acid Then, 0.2 part of dimethylbenzylamine was added, and the addition reaction was carried out at 100 ° C. for 24 hours. Subsequently, 38 parts of tetrahydrophthalic anhydride and 83.6 parts of carbitol acetate were added, and the mixture was reacted at 100 ° C. for 3 hours. A 50% by weight solution of the polymer (an alkali-soluble polymer (A′-4) solution was obtained).
そして、上記溶液の溶媒を除去してアルカリ可溶性重合体(A’−4)を得た。このアルカリ可溶性重合体(A’−4)の数平均分子量Mnは7020、重量平均分子量Mwは15800、分散度Mw/Mnは2.25であった。また酸価は76.4mgKOH/gであった。 And the solvent of the said solution was removed and the alkali-soluble polymer (A'-4) was obtained. The number average molecular weight Mn of this alkali-soluble polymer (A′-4) was 7020, the weight average molecular weight Mw was 15800, and the degree of dispersion Mw / Mn was 2.25. The acid value was 76.4 mgKOH / g.
[液状エッチングレジストインキの調製]
上記合成例で生成されたアルカリ可溶性樹脂(A−1)溶液、(A−2)溶液、(A’−1)溶液、(A’−2)溶液に、それぞれ表1に示す各成分を加え、三本ロールで混練することにより、実施例1,2及び比較例1,2のプリント配線板用レジストインキ組成物(液状エッチングレジストインキ)を得た。
[Preparation of liquid etching resist ink]
Each component shown in Table 1 was added to the alkali-soluble resin (A-1) solution, (A-2) solution, (A′-1) solution, and (A′-2) solution produced in the above synthesis example. The resist ink compositions (liquid etching resist ink) for printed wiring boards of Examples 1 and 2 and Comparative Examples 1 and 2 were obtained by kneading with three rolls.
尚、表1中の「イルガキュアー907」(商品名)はチバスペシャルティーケミカルズ社製光重合開始剤であり、また「カヤキュアーDETX−S」(商品名)は日本化薬社製光重合開始剤であり、また「モダフロー」(商品名)はモンサント社製レベリング剤である。また「アロニックスM−309」(商品名)は東亞合成株式会社製トリメチロールプロパントリアクリレートであり、ビクトリアビュアブルーBOHは保土ヶ谷工業株式会社製染料である。 In Table 1, “Irgacure 907” (trade name) is a photopolymerization initiator manufactured by Ciba Specialty Chemicals, and “Kayacure DETX-S” (trade name) is a photopolymerization initiator manufactured by Nippon Kayaku Co., Ltd. “Modaflow” (trade name) is a leveling agent manufactured by Monsanto. “Aronix M-309” (trade name) is trimethylolpropane triacrylate manufactured by Toagosei Co., Ltd., and Victoria View Blue BOH is a dye manufactured by Hodogaya Kogyo Co., Ltd.
[液状ソルダーレジストインキの調製]
上記合成例で生成されたアルカリ可溶性樹脂(A−3)溶液、(A−4)溶液、(A’−3)溶液、(A’−4)溶液に、表2に示す各成分を加え、三本ロールで混練することにより、実施例3,4及び比較例3,4のプリント配線板用レジストインキ組成物(液状ソルダーレジストインキ)を得た。
[Preparation of liquid solder resist ink]
Each component shown in Table 2 was added to the alkali-soluble resin (A-3) solution, the (A-4) solution, the (A′-3) solution, and the (A′-4) solution generated in the above synthesis example, By kneading with three rolls, resist ink compositions (liquid solder resist ink) for printed wiring boards of Examples 3 and 4 and Comparative Examples 3 and 4 were obtained.
尚、表1中の「エピクロンN−695」(商品名)は大日本インキ化学工業社製のクレゾールノボラックエポキシ樹脂であり、「イルガキュアー907」(商品名)はチバスペシャルティーケミカルズ社製光重合開始剤であり、また「カヤキュアーDETX−S」(商品名)は日本化薬社製光重合開始剤であり、また「モダフロー」(商品名)はモンサント社製レベリング剤である。また「DPHA」はジペンタエリスリトールヘキサアクリレートである。 In Table 1, “Epiclon N-695” (trade name) is a cresol novolac epoxy resin manufactured by Dainippon Ink and Chemicals, and “Irgacure 907” (trade name) is a photopolymerization manufactured by Ciba Specialty Chemicals. “Kayacure DETX-S” (trade name) is a photopolymerization initiator manufactured by Nippon Kayaku Co., Ltd., and “Modaflow” (trade name) is a leveling agent manufactured by Monsanto. “DPHA” is dipentaerythritol hexaacrylate.
[液状エッチングレジストインキの性能評価]
[評価用テストピースの作製]
実施例1,2及び比較例1,2の液状エッチングレジストインキにより製造されるプリント配線板の性能を確認するため、順次下記工程を経ることによりテストピースを作成した。
[Performance evaluation of liquid etching resist ink]
[Production of test piece for evaluation]
In order to confirm the performance of the printed wiring boards manufactured with the liquid etching resist inks of Examples 1 and 2 and Comparative Examples 1 and 2, test pieces were prepared by sequentially performing the following steps.
〈塗布工程〉
各液状エッチングレジストインキを、厚み35μmの銅箔のガラスエポキシ基材からなる銅張積層板にスクリーン印刷により塗布し、基板表面にレジストインキ層を形成させた。
<Application process>
Each liquid etching resist ink was applied by screen printing to a copper-clad laminate made of a glass epoxy base material of a copper foil having a thickness of 35 μm to form a resist ink layer on the substrate surface.
〈予備乾燥工程〉
塗布工程の後、基板表面のレジストインキ層中の溶剤を揮発させるために80℃で予備乾燥を30分行ない、膜厚12μmの乾燥塗膜を得た。
<Preliminary drying process>
After the coating step, preliminary drying was performed at 80 ° C. for 30 minutes in order to volatilize the solvent in the resist ink layer on the substrate surface, and a dry coating film having a thickness of 12 μm was obtained.
〈露光工程〉
その後、減圧密着型両面露光機(オーク製作所製、「ORC HMW−201GX」)にて、評価パターンを描いたマスクを乾燥塗膜に直接当てがうと共に減圧密着させ、100mJ/cm2の紫外線を照射し基板表面上の乾燥塗膜の選択的露光を行った。
<Exposure process>
Then, with a reduced-pressure contact type double-side exposure machine (“ORC HMW-201GX” manufactured by Oak Manufacturing Co., Ltd.), a mask on which an evaluation pattern was drawn was directly applied to the dried coating film, and the contact was applied under reduced pressure, and ultraviolet rays of 100 mJ / cm 2 Irradiated to selectively expose the dried coating on the substrate surface.
〈現像工程〉
露光工程後の乾燥塗膜において、選択的に未露光となっている部分を、30℃の1%炭酸ナトリウム水溶液を現像液として60秒間現像することにより除去し、基板上に露光硬化された乾燥塗膜のパターンを形成させた。
<Development process>
In the dried coating film after the exposure step, the selectively unexposed portion is removed by developing for 60 seconds using a 1% sodium carbonate aqueous solution at 30 ° C. as a developer, and the substrate is exposed and cured on the substrate. A coating pattern was formed.
[プリント配線板の性能評価]
上記工程で得られたテストピースについて以下の評価を行った。
[Performance evaluation of printed wiring boards]
The following evaluation was performed about the test piece obtained at the said process.
〈タック性〉
上記条件で予備乾燥した被膜を乾燥被膜面同士が接触するように重ねて1Kg/cm2の加重をかけ、25℃、55%RH環境下で1週間放置後、接触面を離して被膜の剥がれや表面状態の異常を100倍の顕微鏡で観察した。
×:被膜表面に接触跡が付く状態。
○:被膜表面に接触跡が全く付かない状態。
<Tackiness>
The films preliminarily dried under the above conditions are stacked so that the dried film surfaces are in contact with each other, applied with a weight of 1 kg / cm 2 , left for 1 week in an environment of 25 ° C. and 55% RH, and then the contact surfaces are released to peel off the film. And abnormal surface conditions were observed with a 100 × microscope.
X: A state in which a contact mark is attached to the coating surface.
○: No contact mark on the coating surface.
〈現像性〉
現像後に未露光部の現像状態を目視で評価した。現像性の評価方法は次の通りである。
×:未露光部においてレジストの色が確認できる状態。
△:レジストの色は確認できないが、レジストの残渣が確認できる状態。
○:レジスト残渣が全く無い状態。
<Developability>
The developed state of the unexposed part was visually evaluated after development. The evaluation method of developability is as follows.
X: The state in which the color of the resist can be confirmed in the unexposed area.
Δ: Resist color cannot be confirmed, but resist residue can be confirmed.
○: There is no resist residue.
〈残存ステップ段〉
露光テスト用マスク(日立化成工業社製、「ステップタブレットPHOTEC21段」)による現像後の残存ステップ段数を求め、これにより露光感度を評価した。
<Remaining step level>
The number of remaining step steps after development with an exposure test mask (manufactured by Hitachi Chemical Co., Ltd., “Step Tablet PHOTEC 21 steps”) was determined, and thereby the exposure sensitivity was evaluated.
〈解像性〉
線幅及び線間が共に100μmの平行線で構成されるマスクパターンによって形成されるパターンの線幅を顕微鏡にて測長し、元の線幅からの太りを評価した。元の線幅に近いほど解像性は良いとされる。
<Resolution>
The line width of a pattern formed by a mask pattern composed of parallel lines each having a line width of 100 μm between the lines was measured with a microscope, and the thickness from the original line width was evaluated. The closer to the original line width, the better the resolution.
以上の結果を表3に示す。 The above results are shown in Table 3.
[液状ソルダーレジストインキの性能評価]
[評価用テストピースの作製]
実施例3,4及び比較例3,4の液状フォトソルダーレジストインキにより製造されるプリント配線板の性能を確認するため、順次下記工程を経ることによりテストピースを作成した。
[Performance evaluation of liquid solder resist ink]
[Production of test piece for evaluation]
In order to confirm the performance of the printed wiring board manufactured with the liquid photo solder resist inks of Examples 3 and 4 and Comparative Examples 3 and 4, test pieces were prepared by sequentially performing the following steps.
〈塗布工程〉
各液状フォトソルダーレジストインキを、厚み35μmの銅箔のガラスエポキシ基材からなる銅張積層板及びこれを予めエッチングしてパターンを形成しておいたプリント配線基板の全面にスクリーン印刷により塗布し、基板表面にレジストインキ層を形成させた。
<Application process>
Each liquid photo solder resist ink is applied by screen printing to the entire surface of a copper-clad laminate made of a 35 μm thick copper foil glass epoxy base material and a printed wiring board that has been previously etched to form a pattern, A resist ink layer was formed on the substrate surface.
〈予備乾燥工程〉
塗布工程の後、基板表面のレジストインキ層中の溶剤を揮発させるために80℃で予備乾燥を20分行ない、膜厚20μmの乾燥塗膜を得た。
<Preliminary drying process>
After the coating step, preliminary drying was performed at 80 ° C. for 20 minutes in order to volatilize the solvent in the resist ink layer on the substrate surface, and a dried coating film having a thickness of 20 μm was obtained.
〈露光工程〉
その後、減圧密着型両面露光機(オーク製作所製、「ORC HMW680GW」)にて、評価パターンを描いたマスクを乾燥塗膜に直接当てがうと共に減圧密着させ、150mJ/cm2の紫外線を照射し基板表面上の乾燥塗膜の選択的露光を行った。
<Exposure process>
Then, with a reduced-pressure contact type double-sided exposure machine (“ORC HMW680GW” manufactured by Oak Manufacturing Co., Ltd.), a mask on which an evaluation pattern was drawn was directly applied to the dried coating film and brought into close contact under reduced pressure, and irradiated with 150 mJ / cm 2 ultraviolet rays. Selective exposure of the dried coating on the substrate surface was performed.
〈現像工程〉
露光工程後の乾燥塗膜において、選択的に未露光となっている部分を、30℃の1%炭酸ナトリウム水溶液を現像液として60秒間現像することにより除去し、基板上に露光硬化された乾燥塗膜のパターンを形成させた。
<Development process>
In the dried coating film after the exposure step, the selectively unexposed portion is removed by developing for 60 seconds using a 1% sodium carbonate aqueous solution at 30 ° C. as a developer, and the substrate is exposed and cured on the substrate. A coating pattern was formed.
〈ポストベーク工程〉
現像工程で得られた、露光硬化された乾燥塗膜のパターンが形成されている基板を150℃で30分間加熱し、乾燥塗膜の硬化を行い、テストピースを得た。
<Post-bake process>
The substrate on which the pattern of the exposure-cured dry coating film formed in the development process was formed was heated at 150 ° C. for 30 minutes to cure the dry coating film, thereby obtaining a test piece.
[プリント配線板の性能評価]
上記工程で得られたテストピースについて以下の評価を行った。
[Performance evaluation of printed wiring boards]
The following evaluation was performed about the test piece obtained at the said process.
〈タック性〉
上記条件で予備乾燥した被膜を乾燥被膜面同士が接触するように重ねて1Kg/cm2 の加重をかけ、25℃、55%RH環境下で1週間放置後、接触面を離して被膜の剥がれや表面状態の異常を100倍の顕微鏡で観察した。
×:被膜表面に接触跡が付く状態。
○:被膜表面に接触跡が全く付かない状態。
<Tackiness>
The films preliminarily dried under the above conditions are stacked so that the dried film surfaces are in contact with each other, applied with a weight of 1 kg / cm 2 , left for 1 week in an environment of 25 ° C. and 55% RH, and then the contact surfaces are released to peel off the film. And abnormal surface conditions were observed with a 100 × microscope.
X: A state in which a contact mark is attached to the coating surface.
○: No contact mark on the coating surface.
〈現像性〉
現像後に未露光部の現像状態を目視で評価した。現像性の評価方法は次の通りである。
×:未露光部においてレジストの色が確認できる状態。
△:レジストの色は確認できないが、レジストの残渣が確認できる状態。
○:レジスト残渣が全く無い状態。
<Developability>
The developed state of the unexposed part was visually evaluated after development. The evaluation method of developability is as follows.
X: The state in which the color of the resist can be confirmed in the unexposed area.
Δ: Resist color cannot be confirmed, but resist residue can be confirmed.
○: There is no resist residue.
〈残存ステップ段〉
露光テスト用マスク(日立化成工業社製、「ステップタブレットPHOTEC21段」)による現像後の残存ステップ段数を求め、これにより露光感度を評価した。
<Remaining step stage>
The number of remaining step steps after development with an exposure test mask (manufactured by Hitachi Chemical Co., Ltd., “Step Tablet PHOTEC 21 steps”) was determined, and thereby the exposure sensitivity was evaluated.
〈解像性〉
線幅及び線間が共に100μmの平行線で構成されるマスクパターンによって形成されるパターンの線幅を顕微鏡にて測長し、元の線幅からの太りを評価した。元の線幅に近いほど解像性は良いとされる。
<Resolution>
The line width of a pattern formed by a mask pattern composed of parallel lines each having a line width of 100 μm between the lines was measured with a microscope, and the thickness from the original line width was evaluated. The closer to the original line width, the better the resolution.
〈半田耐熱性〉
フラックスとしてLONCO 3355−11(ロンドンケミカル社製の水溶性フラックス)を用い、まずテストピースにフラックスを塗布し、次いでこれを260℃の溶融半田浴に15秒間浸漬し、その後水洗した。このサイクルを1回又は5回おこなった後の表面白化の程度を観察した。また、クロスカットによるセロハン粘着テープ剥離試験をJIS D 0202に準拠して行い、密着状態の変化を観察した。
<Solder heat resistance>
LONCO 3355-11 (water-soluble flux manufactured by London Chemical Co., Ltd.) was used as the flux. First, the flux was applied to the test piece, and then immersed in a molten solder bath at 260 ° C. for 15 seconds, and then washed with water. The degree of surface whitening after performing this cycle once or five times was observed. Moreover, the cellophane adhesive tape peeling test by the cross cut was done based on JISD0202, and the change of the adhesion state was observed.
表面白化の評価方法は次の通りである。
×:著しく白化した。
△:僅かに白化が認められた。
○:異常を生じなかった。
The evaluation method of surface whitening is as follows.
X: Remarkably whitened.
Δ: Slight whitening was observed.
○: No abnormality occurred.
また密着性の評価方法は次の通りである。
×:クロスカット試験をするまでもなく、レジストの膨れ又は剥離を生じた。
△:テープ剥離時にクロスカット部分に一部剥離を生じた。
○:クロスカット部分の剥離を生じなかった。
Moreover, the evaluation method of adhesiveness is as follows.
X: Resist swelling or peeling occurred without performing a cross-cut test.
(Triangle | delta): Partial peeling occurred in the crosscut part at the time of tape peeling.
○: No peeling of the crosscut portion occurred.
〈鉛筆硬度〉
鉛筆硬度をJIS K 5600に準拠して測定して評価した。
<Pencil hardness>
The pencil hardness was measured and evaluated according to JIS K 5600.
以上の結果を表4に示す。 The results are shown in Table 4.
表3から明らかなように、実施例1、2では、タック性、現像性、残存ステップ段、解像性の各評価項目が全て良好なものであった。 As is clear from Table 3, in Examples 1 and 2, all evaluation items of tack property, developability, remaining step level, and resolution were all good.
また、表4から明らかなように、実施例3,4では、タック性、現像性、残存ステップ段、解像性に加えて、ソルダーレジストに必要な特性である半田耐熱性、密着性、鉛筆硬度の各評価項目が全て良好なものであった。 Further, as is apparent from Table 4, in Examples 3 and 4 , in addition to tackiness, developability, remaining step level, and resolution, solder heat resistance, adhesion, pencil, which are characteristics required for solder resist Each evaluation item of hardness was satisfactory.
Claims (16)
(A)可逆的付加−分裂連鎖移動重合法によるリビングラジカル重合法により得られる分散度が1.8以下のアルカリ可溶性重合体
(B)光重合性単量体
(C)光重合開始剤 The following (A) component thru | or (C) component are contained, and the following (A) component is a part of the carboxyl group in the polymer (A1) which has a carboxyl group in a side chain, and at least 1 ethylenic 2 in a molecule | numerator. double bond and the compound (d) is reacted, characterized in der Rukoto those obtained printed wiring board manufacturing for alkali development type photosensitive resist ink composition having a reactive group capable of reacting with at least one carboxyl group .
(A) Alkali-soluble polymer (B) photopolymerizable monomer (C) photopolymerization initiator having a dispersity of 1.8 or less obtained by living radical polymerization by reversible addition-fragmentation chain transfer polymerization
(A)可逆的付加−分裂連鎖移動重合法によるリビングラジカル重合法により得られる分散度が1.8以下のアルカリ可溶性重合体
(B)光重合性単量体
(C)光重合開始剤 The following (A) component thru | or (C) component are contained, and the following (A) component is a saturated or unsaturated monocarboxylic acid (e in a part or all of the epoxy group in the polymer which has an epoxy group in a side chain. ) were reacted to further the reaction polybasic acid anhydride (f) the printed wiring board manufacturing for alkali development type photosensitive resist, characterized in der Rukoto those obtained by reacting a part of the generated hydroxyl group by Ink composition.
(A) Alkali-soluble polymer (B) photopolymerizable monomer (C) photopolymerization initiator having a dispersity of 1.8 or less obtained by living radical polymerization by reversible addition-fragmentation chain transfer polymerization
(A)可逆的付加−分裂連鎖移動重合法によるリビングラジカル重合法により得られる分散度が1.8以下のアルカリ可溶性重合体
(B)光重合性単量体
(C)光重合開始剤
(G)多官能エポキシ化合物 An alkali development type photosensitive resist ink composition for producing a printed wiring board, comprising the following components (A) to (C) and the following component (G):
(A) Alkali-soluble polymer (B) photopolymerizable monomer (C) photopolymerization initiator having a dispersity of 1.8 or less obtained by living radical polymerization by reversible addition-fragmentation chain transfer polymerization
(G) Polyfunctional epoxy compound
(A)リビングラジカル重合法により得られる分散度が1.8以下のアルカリ可溶性重合体
(C)光重合開始剤 The following (A) component and (C) component are contained, and the following (A) component has a carboxyl group in the side chain, a part of the carboxyl group in the polymer (A1), and at least one ethylenic diene in the molecule. It is obtained by reacting a compound (d) having a heavy bond and a reactive group capable of reacting with at least one carboxyl group, and undergoes a polymerization reaction upon irradiation with energy rays in the presence of a photopolymerization initiator. An alkali development type photosensitive resist ink composition for producing a printed wiring board.
(A) Alkali-soluble polymer having a dispersity of 1.8 or less obtained by a living radical polymerization method (C) Photopolymerization initiator
(A)リビングラジカル重合法により得られる分散度が1.8以下のアルカリ可溶性重合体
(C)光重合開始剤 A saturated or unsaturated monocarboxylic acid (e ) is contained in part or all of the epoxy group in the polymer containing the following component (A) and component (C) and the component (A) having an epoxy group in the side chain: ), And a polybasic acid anhydride (f) is further reacted with a part of the hydroxyl group produced by the above reaction, and a polymerization reaction is caused by irradiation with energy rays in the presence of a photopolymerization initiator. An alkali development type photosensitive resist ink composition for producing a printed wiring board.
(A) Alkali-soluble polymer having a dispersity of 1.8 or less obtained by a living radical polymerization method (C) Photopolymerization initiator
(B)光重合性単量体 The alkali-developable photosensitive resist ink composition for producing a printed wiring board according to claim 4, comprising the following component (B):
(B) Photopolymerizable monomer
(A)リビングラジカル重合法により得られる分散度が1.8以下のアルカリ可溶性重合体
(C)光重合開始剤
(G)多官能エポキシ化合物 The following (A) component and (C) component and the following (G) component are contained, and the following (A) component is subjected to irradiation with an energy ray in the presence of a photopolymerization initiator to cause a polymerization reaction. An alkali development type photosensitive resist ink composition for producing a printed wiring board.
(A) Alkali-soluble polymer having a dispersity of 1.8 or less obtained by a living radical polymerization method (C) Photopolymerization initiator
(G) Polyfunctional epoxy compound
(B)光重合性単量体 The alkali developing type photosensitive resist ink composition for producing a printed wiring board according to claim 7 , which comprises the following component (B):
(B) Photopolymerizable monomer
(G)多官能エポキシ化合物 The alkali-developable photosensitive resist ink composition for producing a printed wiring board according to any one of claims 1, 2, 4, 5, and 6, comprising the following component (G):
(G) Polyfunctional epoxy compound
(H)稀釈剤 The alkali-developable photosensitive resist ink composition for producing a printed wiring board according to any one of claims 1 to 13 , comprising the following component (H).
(H) Diluent
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