JP4695769B2 - Semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device, and more particularly to a semiconductor device using a flexible substrate.
[0002]
Conventionally, miniaturization and high density have been desired for semiconductor devices.
[0003]
As a semiconductor device capable of increasing the density, a TCP (Tape Carrier Package) using a TAB (Tape Automated Bonding) tape is known. Since the semiconductor device having the TCP structure can reduce the pitch between leads, the size and density of the semiconductor device can be reduced.
[0004]
However, with the recent spread of small electronic devices typified by portable terminals and the like, semiconductor devices that are further miniaturized and densified are desired.
[0005]
[Prior art]
FIG. 1 shows a conventional semiconductor device 1A using a TAB tape 3. 1A is a plan view of the semiconductor device 1A, and FIG. 1B is a cross-sectional view of the semiconductor device 1A.
[0006]
The semiconductor device 1A is roughly composed of a semiconductor chip 2, a TAB tape 3, a frame 4A, and the like. The TAB tape 3 functions as an interposer, and has a configuration in which a predetermined pattern of wiring (not shown) is formed on an insulating tape as a base. One end of the wiring is connected to the semiconductor chip 2 mounted on the TAB tape 3, and the other part is connected to the solder ball 5 through a via.
[0007]
The frame 4A is made of resin or metal, and an opening 6 is formed at the center thereof. The frame body 4A is fixed to the TAB tape 3 using an adhesive, thereby preventing the TAB tape 3 from being warped or bent. Further, the semiconductor chip 2 is configured to be positioned in the opening 6 in a state where the frame body 4 </ b> A is fixed to the TAB tape 3.
[0008]
Since the semiconductor device 1A having the above-described configuration has a configuration in which wiring is formed on an insulating tape, the pitch between wirings can be narrowed, and the density and size of the semiconductor device 1A can be increased. it can.
[0009]
2 and 3 show semiconductor devices 1B and 1C having other conventional configurations. The semiconductor device 1A shown in FIG. 1 has a structure in which the opening 6 is formed in the center of the flat plate member as the frame 4A.
On the other hand, the semiconductor devices 1B and 1C shown in FIGS. 2 and 3 use lattice-like members as the frame bodies 4B and 4C. For this reason, the frame bodies 4B and 4C are configured such that a plurality of through-holes 7 penetrating in the vertical direction (perpendicular to the surface direction of the TAB tape 3) are formed. Thus, by making the frame bodies 4B and 4C into a lattice shape, the rigidity of the frame bodies 4B and 4C can be increased, and the TAB tape 3 can be more reliably prevented from warping or bending. .
[0010]
[Problems to be solved by the invention]
As described above, since the semiconductor devices 1A to 1C use the TAB tape 3 as an interposer, it is possible to achieve high density and downsizing. Incidentally, as described above, with the spread of small electronic devices and the like, further miniaturization and higher density are desired for semiconductor devices. However, since there is a limit to downsizing by reducing the planar mounting area of the semiconductor device, in recent years, a configuration in which the semiconductor device is mounted three-dimensionally, that is, by stacking a plurality of semiconductor devices, the mounting density is reduced. Improvements are being made.
[0011]
However, the semiconductor devices 1A to 1C described above cannot be stacked because the upper surface of the TAB tape 3 serving as an interposer is covered with the frame bodies 4A to 4C. For this reason, in the semiconductor devices 1A to 1C using the conventional TAB tape 3 and the frames 4A to 4C, there is a problem that the mounting density cannot be improved because the semiconductor devices cannot be stacked.
[0012]
The present invention has been made in view of the above-described points, and an object of the present invention is to provide a semiconductor device that can be stacked even with a configuration using a flexible substrate and a frame.
[0013]
[Means for Solving the Problems]
In order to solve the above-described problems, the present invention is characterized by the following means.
[0014]
In invention of Claim 1,
A semiconductor element;
A flexible substrate on which wiring is formed and the semiconductor element is mounted to connect to the wiring;
In a semiconductor device having a frame disposed on the flexible substrate,
When the frame is disposed on the flexible substrate, the semiconductor element is configured to be positioned inside an opening provided in the frame,
It is configured that at least the surface of the frame has an insulating property,
Forming a plurality of through holes penetrating the frame body in a direction perpendicular to the surface direction of the flexible substrate, and disposing a conductive member in all or part of the through holes;
Before Kishirube conductive portion of the member is connected to the wiring electrically of the flexible substrate, the other portion of the conductive member is an electrically connectable structure from the outside of the frame body,
A conductive paste is used as the conductive member .
In the invention according to claim 2,
A semiconductor element;
A flexible substrate on which wiring is formed and the semiconductor element is mounted to connect to the wiring;
In a semiconductor device having a frame disposed on the flexible substrate,
When the frame is disposed on the flexible substrate, the semiconductor element is configured to be positioned inside an opening provided in the frame,
It is configured that at least the surface of the frame has an insulating property,
Forming a plurality of through holes penetrating the frame body in a direction perpendicular to the surface direction of the flexible substrate, and disposing a conductive member in all or part of the through holes;
A part of the conductive member is electrically connected to the wiring of the flexible substrate, and the other part of the conductive member can be electrically connected from the outside of the frame,
A pin made of a conductive metal is used as the conductive member.
In the invention according to claim 3,
The semiconductor device according to claim 1 or 2,
A communication portion that communicates between the through holes adjacent to the frame is formed.
In the invention according to claim 4,
A semiconductor element;
A flexible substrate on which wiring is formed and the semiconductor element is mounted to connect to the wiring;
In a semiconductor device having a frame disposed on the flexible substrate,
When the frame is disposed on the flexible substrate, the semiconductor element is configured to be positioned inside an opening provided in the frame,
Forming a plurality of through holes penetrating the frame body in a direction perpendicular to the surface direction of the flexible substrate, and disposing a conductive member in all or part of the through holes;
A part of the conductive member is electrically connected to the wiring of the flexible substrate, and the other part of the conductive member can be electrically connected from the outside of the frame,
The frame is composed of a frame body made of a conductive material, and an insulating film formed on the surface of the frame body,
In addition, an exposed portion is formed by removing a part of the insulating film, and the exposed portion is connected to the wiring.
[0028]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described with reference to the drawings.
[0029]
4 and 5 are views for explaining a semiconductor device 10A according to the first embodiment of the present invention. 4A is a plan view of the semiconductor device 10A, and FIG. 4B is a cross-sectional view taken along line X1-X1 in FIG. 4A. 5A is an enlarged view showing a cross section of the frame body 14A, and FIG. 5B is an enlarged view showing a portion indicated by an arrow A in FIG. 4B.
[0030]
The semiconductor device 10A generally includes a semiconductor chip 12, a TAB tape 13 (flexible substrate), a frame body 14A, conductive pins 20, and the like.
The TAB tape 13 functions as an interposer, and has a configuration in which a predetermined pattern of wiring 22 (see FIG. 5B) is formed on a base insulating tape (for example, a polyimide tape). One end of the wiring 22 is connected to the semiconductor chip 2 mounted on the TAB tape 3, and the other end is connected to a conductive pin 20 described later (see FIG. 5B) or via a via 37. Are connected to solder balls 15 serving as external connection terminals (see FIG. 4B).
[0031]
As shown in an enlarged view in FIG. 5A, the frame body 14 </ b> A includes a frame body 18 and an insulating film 19. The frame body 18 is made of a conductive metal such as stainless steel or copper.
[0032]
The frame body 18 has a lattice shape as a whole by forming a plurality of through holes 17. The through-hole 17 is configured to penetrate in the direction perpendicular to the surface direction of the TAB tape 3 (the directions of arrows Y1 and Y2 in FIG. 4B). By forming the plurality of through-holes 17 in this way, the column body 23 is formed with the pillar portion 23, whereby the frame body 14A has a lattice shape as a whole.
[0033]
The insulating film 19 is made of an insulating resin such as an epoxy resin and covers the surface of the frame body 18. Thereby, even if the frame body 18 is a metal having conductivity, the frame body 14A can be used as an insulator. Furthermore, a rectangular opening 16 is formed at the center of the frame body 14A. The opening 16 is also configured to penetrate in a direction perpendicular to the surface direction of the TAB tape 3 (arrow Y1, Y2 direction).
[0034]
The frame body 14A having the above-described configuration is fixed to the TAB tape 13 using an adhesive 21, whereby the TAB tape 13 is reinforced by the frame body 14A. At this time, since the rigidity of the frame body 14A is increased by being formed in a lattice shape as described above, even if the TAB tape 13 has flexibility, it is ensured that warpage or bending occurs. Can be prevented. In a state where the frame body 14A is fixed to the TAB tape 13, the semiconductor chip 12 is configured to be positioned inside the opening 6 provided in the frame body 14A.
[0035]
Next, the conductive pin 20 (corresponding to the conductive member recited in the claims) will be described.
The conductive pin 20 is made of a conductive metal (for example, copper) and has a substantially cylindrical shape that can be fitted into the through hole 17. In addition, a side protrusion 24 that extends toward the side is integrally formed on the side surface of the conductive pin 20 (detailed in FIG. 5B). The side protrusion 24 is configured to engage with an engagement hole 38 formed in the column portion 23 constituting the frame body 14A.
Specifically, when the conductive pin 20 is inserted into the through hole 17, the side protrusion 24 is inserted while being elastically deformed. However, when the side protrusion 24 and the engagement hole 38 face each other, the side protrusion 24 protrudes. The portion 24 is elastically restored, so that the side protrusion 24 is engaged with the engagement hole 38. Therefore, when the side protrusion 24 is engaged with the engagement hole 38, the conductive pin 20 is not detached from the through hole 17 (frame body 14A).
[0036]
Further, as described above, since the column portion 23 constituting the frame body 14A is covered with the insulating film 19, even if the conductive pin 20 is mounted on the frame body 14A, the conductive pin 20 is electrically connected to the frame body main body 18. Is never connected.
[0037]
The conductive pin 20 is mounted on the frame 14A, and the lower end (the end in the arrow Y2 direction) of the conductive pin 20 is electrically connected to the wiring 22 in a state where the frame 14A is mounted on the TAB tape 13. Has been. That is, the conductive pin 20 is mounted in the through hole 17 located at a predetermined position connected to the wiring 22 formed on the TAB tape 13.
[0038]
Further, the upper end (the end portion in the arrow Y1 direction) of the conductive pin 20 is configured to protrude slightly from the upper surface of the frame body 14A (the amount indicated by the arrow Δ in FIG. 5B). Therefore, it is possible to achieve conduction between the upper surface and the lower surface of the frame body 14A by the conductive pins 20. Therefore, for example, by connecting the electrode of another device to the conductive pin 20 from the outside of the frame body 14 </ b> A, the electrode of the other device can be connected to the semiconductor chip 12 via the conductive pin 20 and the wiring 22.
[0039]
Thereby, the conductive pin 20 has a function equivalent to, for example, a via in the multilayer wiring board, and thus the frame body 14A also functions as a wiring board. Therefore, when the semiconductor device 10A is mounted or externally connected, since the external connection only with the solder ball 15 can be made using the conductive pins 20, the degree of freedom of external connection is increased. be able to. In addition, since the conductive pins 20 are exposed on the upper surface of the frame body 14A so as to be externally connectable, other electronic devices (including semiconductor devices) can be stacked on the semiconductor device 10A, and the mounting density can be reduced. Improvements can be made.
[0040]
Furthermore, in the present embodiment, since the conductive pin 20 is used as the conductive member disposed in the through hole 17 of the frame body 14A, the specified through hole 17 can be simply inserted into the through hole 17. The conductive pin 20 can be easily disposed inside.
[0041]
Next, a second embodiment of the present invention will be described.
FIG. 6 shows a semiconductor device 10B according to the second embodiment of the present invention. 6A is a plan view of the semiconductor device 10B, and FIG. 6B is a cross-sectional view taken along line X2-X2 in FIG. 6A. In FIG. 6, the same components as those described with reference to FIGS. 4 and 5 are denoted by the same reference numerals, and the description thereof is omitted. The same applies to the description of each embodiment described below.
[0042]
In the first embodiment, the example in which the conductive pin 20 is used as the conductive member to be mounted in the through hole 17 is shown. However, in this embodiment, the conductive paste 25 is used as the conductive member. Is. The conductive paste 25 is obtained by mixing conductive metal powder (for example, copper powder) into a resin paste. Similarly to the conductive pin 20, the through hole 17 in which the conductive paste 25 is disposed is also set corresponding to a predetermined position connected to the wiring 22.
[0043]
As a method of attaching the conductive paste 25 to the through hole 17, for example, as shown in FIG. 7, a dispenser method using a dispenser 26 can be used. The dispenser 26 is configured to be movable on the frame body 14B by a moving mechanism (not shown). As described above, the dispenser 26 is moved up to the through hole 17 corresponding to the position where the wiring 22 is disposed, and then the conductive paste material 25a is removed. Injection into the through hole 17. Thereafter, the conductive paste material 25a is solidified by performing a heat treatment, whereby the conductive paste 25 is formed. The method of loading the conductive paste material 25a into the through-hole 17 is not limited to the dispenser method, and a printing method or the like can be used.
[0044]
As described above, even if the conductive paste 25 is provided in place of the conductive pins 20, the conductive paste 25 can achieve electrical conduction between the upper surface and the lower surface of the frame body 14B. As in the first embodiment, the degree of freedom of external connection can be increased, and other electronic devices (including semiconductor devices) can be stacked on the semiconductor device 10B, thereby improving the mounting density. Can do.
Furthermore, since the conductive paste 25 used in this embodiment is less expensive than the conductive pins 20 and can be easily mounted in the through holes 17, the cost of the semiconductor device 10B can be reduced.
[0045]
By the way, in the present embodiment, the conductive paste material 25a is loaded into the through-hole 17, and the conductive paste 25 is formed by solidifying the conductive paste material 25a. When it is disposed in the air gap 17, air or the like may enter the conductive paste material 25a and voids may be generated. This void expands due to heating such as when the conductive paste material 25a is solidified or when the semiconductor device 10B is mounted, resulting in peeling between the frame body 14B and the TAB tape 13, or the frame body. It is considered that damage occurs in 14B.
[0046]
A means for preventing this is shown in FIG. FIG. 8A is a plan view of the frame 14E that can prevent the above-described peeling and damage due to voids, and FIG. 8B is an enlarged view of the position indicated by the arrow B in FIG. 8A. FIG. 8C is a cross-sectional view taken along line X4-X4 in FIG. 8B.
[0047]
As shown in the figure, in this embodiment, when a through hole in which the conductive paste material 25a is disposed is denoted by reference numeral 17A, a communication hole 28 (communication portion) that communicates between the through hole 17B adjacent to the through hole 17A. Is formed in the frame body 14B. In this way, by forming the communication hole 28 that communicates between the adjacent through holes 17A and 17B, the conductive paste 25 is disposed through the communication hole 28 for the expanded gas even if the void expands thermally. It is discharged to the through hole 17B that is not performed.
Accordingly, it is possible to prevent peeling between the frame body 14E and the TAB tape 13 or damage to the frame body 14E during heating, and the reliability of the semiconductor device can be improved. Note that the configuration for allowing the void to escape from the through hole 17A to the through hole 17B is not limited to the communication hole 28 described above. As shown in FIGS. 9 (A) and 9 (B), the upper and lower surfaces of the frame body 14E are provided. It is good also as a structure which provided the communication groove | channel 29 which connects 17A of through-holes, and the through-hole 17B.
[0048]
Next, a third embodiment of the present invention will be described.
FIG. 10 shows a semiconductor device 10C according to the third embodiment of the present invention. 10A is a plan view of the semiconductor device 10, FIG. 10B is a cross-sectional view taken along line X3-X3 in FIG. 10A, and FIG. 4C is a cross-sectional view of the frame body 14C. FIG.
[0049]
The semiconductor device 10A.1 according to the first and second embodiments described above. In 10B, the frame bodies 14A and 14B are covered with the insulating film 19 to have an insulating property, and the conductive pins 20 or the conductive paste 25 are provided in the through holes 17 to increase the degree of freedom of connection. The configuration is improved. In contrast, the present embodiment is characterized in that the frame body 14C itself is used as a wiring.
[0050]
Specifically, as shown in FIG. 10C, a part of the insulating film 19 formed on the surface of the frame body 18 made of a conductive material is removed to form an exposed portion 27 and this exposure is performed. The portion 27 is configured to be connected to the wiring 22. In FIG. 10A, a black portion is a portion where the insulating film 19 is disposed, and a white portion is the exposed portion 27.
According to the semiconductor device 10C according to the present embodiment, the frame body 14C itself can be used as a wiring, and therefore, the degree of freedom of connection when the semiconductor device 10C is mounted or externally connected can be increased.
[0051]
Next, a fourth embodiment of the present invention will be described.
FIG. 11 is a plan view showing a semiconductor device 10C according to the third embodiment of the present invention.
[0052]
In this embodiment, the conductive pins 20 and the conductive paste 25 are disposed on the frame body 14D, and the exposed portion 27 is further formed. As shown in the present embodiment, the conductive pins 20, the conductive paste 25, and the exposed portions 27 can be arranged not only alternatively but also in a composite manner. Further, the selection of the conductive pins 20, the conductive paste 25, and the exposed portions 27 used as the conductive members disposed on the frame body 14D can be arbitrarily performed.
[0053]
12 to 15 show semiconductor device units 30A to 30D in which the semiconductor devices 10A to 10D according to the present invention are actually stacked structures. 12 to 15 show an example using the semiconductor device 10A. However, the semiconductor devices 10B to 10D can have the same configuration.
[0054]
A semiconductor device unit 30A shown in FIG. 12 is obtained by stacking a single-layer wiring board 31 on top of a semiconductor device 10A. An electrode 32 is formed on the lower surface of the wiring substrate 31 (the surface facing the semiconductor device 10A). The electrode 32 is connected to the conductive pins 20 of the semiconductor device 10A. It will be in the state connected with the conductive pin 20 via this. Further, depending on the pattern of the wiring 22, the wiring substrate 31 may be connected to the solder ball 15.
[0055]
A semiconductor device unit 30B shown in FIG. 13 has a structure in which three semiconductor devices 10A are stacked and a wiring board 31 is disposed on the top. Thus, the number of stacked semiconductor devices 10A is not limited and can be arbitrarily set. Therefore, according to the semiconductor device unit 30B, a high mounting density can be realized.
[0056]
A semiconductor device unit 30C shown in FIG. 14 is obtained by stacking a multilayer wiring board 33 having a multilayer structure on the semiconductor device 10A. A plurality of upper electrodes 34 are formed on the upper surface of the multilayer wiring board 33. The electrodes formed on the lower surface are connected to the conductive pins 20.
[0057]
By laminating the multilayer wiring substrate 33 on the semiconductor device 10A, the multilayer wiring substrate 33 can route the internal wiring with a degree of freedom. Therefore, the upper electrode 34 is not restricted by the position where the conductive pins 20 are disposed. The arrangement position can be set.
[0058]
The semiconductor device unit 30D shown in FIG. 15 has a configuration in which the QFP type semiconductor device 35 is surface-mounted on the multilayer wiring board 33 in the semiconductor device unit 30C shown in FIG. Thus, by stacking the multilayer wiring board 33 on the semiconductor device 10A, it becomes possible to stack the semiconductor devices 35 of different forms on the semiconductor device 10A, and to improve the flexibility of the stacked semiconductor devices. it can.
[0059]
【The invention's effect】
As described above, according to the present invention, since it is possible to electrically connect the wiring of the flexible substrate from the upper surface of the frame body via the conductive member, the connection when the semiconductor device is mounted or externally connected. Can increase the degree of freedom.
[0061]
In addition, by disposing another electronic device on the upper surface of the frame so as to be connected to the conductive member, the electronic device can be stacked on the semiconductor device, and the mounting density can be improved.
[0062]
Also, it is possible to dispose the readily conductive member in the through hole of specified.
[0063]
Also, by forming the communicating portion communicating between the through-holes adjacent to the frame, damage to the frame body exfoliation or occur between the frame and the flexible substrate occurs during heating or the like mounting Thus, the reliability of the semiconductor device can be improved.
[0064]
Also, since it is possible to use as a wiring also a frame itself, it is possible to further enhance the flexibility of the connection at the time of mounting or externally connected to the semiconductor device.
[Brief description of the drawings]
FIG. 1 is a diagram for explaining a conventional semiconductor device (part 1);
FIG. 2 is a diagram for explaining a conventional semiconductor device (part 2);
FIG. 3 is a diagram for explaining a conventional semiconductor device (part 3);
FIG. 4 is a diagram for explaining the semiconductor device according to the first embodiment of the present invention;
FIG. 5 is a view for explaining a frame body and conductive pins provided in the semiconductor device according to the first embodiment of the present invention;
FIG. 6 is a diagram for explaining a semiconductor device according to a second embodiment of the present invention;
FIG. 7 is a view for explaining a conductive paste disposing method in the semiconductor device according to the second embodiment of the present invention;
FIG. 8 is a view for explaining a frame having communication holes.
FIG. 9 is a view for explaining a frame having a communication groove.
FIG. 10 is a diagram for explaining a semiconductor device according to a third embodiment of the present invention.
FIG. 11 is a diagram for explaining a semiconductor device according to a fourth embodiment of the present invention;
FIG. 12 is a diagram showing a semiconductor device unit in which a wiring board is provided in the semiconductor device according to the first embodiment.
FIG. 13 is a diagram showing a semiconductor device unit in which a plurality of semiconductor devices according to the first embodiment are stacked.
FIG. 14 is a diagram showing a semiconductor device unit in which a multilayer wiring board is provided in the semiconductor device according to the first embodiment.
FIG. 15 is a view showing a semiconductor device unit in which a QFP type semiconductor device is provided in the semiconductor device according to the first embodiment;
[Explanation of symbols]
10A to 10D Semiconductor device 12 Semiconductor chip 13 TAB tape 14A to 14E Frame 17, 17A, 17B Through hole 18 Frame body 19 Insulating film 20 Conductive pin 22 Wiring 24 Side protrusion 27 Exposed 28 Communication hole 29 Communication groove 30A -30D Semiconductor device unit 31 Wiring board 33 Multilayer wiring board 35 QFP type semiconductor device

Claims (4)

A semiconductor element;
A flexible substrate on which wiring is formed and the semiconductor element is mounted to connect to the wiring;
In a semiconductor device having a frame disposed on the flexible substrate,
When the frame is disposed on the flexible substrate, the semiconductor element is configured to be positioned inside an opening provided in the frame,
It is configured that at least the surface of the frame has an insulating property,
Forming a plurality of through holes penetrating the frame body in a direction perpendicular to the surface direction of the flexible substrate, and disposing a conductive member in all or part of the through holes;
Before Kishirube conductive portion of the member is connected to the wiring electrically of the flexible substrate, the other portion of the conductive member is an electrically connectable structure from the outside of the frame body,
A semiconductor device using a conductive paste as the conductive member . A semiconductor element;
A flexible substrate on which wiring is formed and the semiconductor element is mounted to connect to the wiring;
In a semiconductor device having a frame disposed on the flexible substrate,
When the frame is disposed on the flexible substrate, the semiconductor element is configured to be positioned inside an opening provided in the frame,
It is configured that at least the surface of the frame has an insulating property,
Forming a plurality of through holes penetrating the frame body in a direction perpendicular to the surface direction of the flexible substrate, and disposing a conductive member in all or part of the through holes;
A part of the conductive member is electrically connected to the wiring of the flexible substrate, and the other part of the conductive member can be electrically connected from the outside of the frame,
A semiconductor device using a pin made of a conductive metal as the conductive member . The semiconductor device according to claim 1 or 2 ,
A semiconductor device, wherein a communication portion is formed for communicating between through holes adjacent to the frame. A semiconductor element;
A flexible substrate on which wiring is formed and the semiconductor element is mounted to connect to the wiring;
In a semiconductor device having a frame disposed on the flexible substrate,
When the frame is disposed on the flexible substrate, the semiconductor element is configured to be positioned inside an opening provided in the frame,
Forming a plurality of through holes penetrating the frame body in a direction perpendicular to the surface direction of the flexible substrate, and disposing a conductive member in all or part of the through holes;
A part of the conductive member is electrically connected to the wiring of the flexible substrate, and the other part of the conductive member can be electrically connected from the outside of the frame,
The frame is composed of a frame body made of a conductive material, and an insulating film formed on the surface of the frame body,
A semiconductor device is characterized in that a part of the insulating film is removed to form an exposed portion, and the exposed portion and the wiring are connected .

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