JP4690521B2 - 広い範囲の波長で同調可能な集積化された半導体装置及び広い範囲の波長で同調可能な半導体装置のための方法 - Google Patents

広い範囲の波長で同調可能な集積化された半導体装置及び広い範囲の波長で同調可能な半導体装置のための方法 Download PDF

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JP4690521B2
JP4690521B2 JP2000144478A JP2000144478A JP4690521B2 JP 4690521 B2 JP4690521 B2 JP 4690521B2 JP 2000144478 A JP2000144478 A JP 2000144478A JP 2000144478 A JP2000144478 A JP 2000144478A JP 4690521 B2 JP4690521 B2 JP 4690521B2
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laser
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reflection
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JP2001007439A (ja
JP2001007439A5 (enExample
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ヘルト・サーレット
イェンス・ビュース
ルール・ベーツ
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Universiteit Gent
Interuniversitair Microelektronica Centrum vzw IMEC
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Interuniversitair Microelektronica Centrum vzw IMEC
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JP2000144478A 1999-05-17 2000-05-17 広い範囲の波長で同調可能な集積化された半導体装置及び広い範囲の波長で同調可能な半導体装置のための方法 Expired - Lifetime JP4690521B2 (ja)

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EP99870105 1999-05-17
EP99870105-6 1999-05-17

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JP2001007439A5 JP2001007439A5 (enExample) 2007-03-08
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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009059729A (ja) * 2007-08-29 2009-03-19 Sumitomo Electric Ind Ltd 半導体発光素子
JP2008294371A (ja) * 2007-05-28 2008-12-04 Sumitomo Electric Ind Ltd 半導体発光素子
JP2009010197A (ja) * 2007-06-28 2009-01-15 Sumitomo Electric Ind Ltd 半導体レーザ素子
JP2009252905A (ja) * 2008-04-03 2009-10-29 Sumitomo Electric Ind Ltd 半導体発光素子及び半導体光源
EP3051638A1 (en) * 2015-01-27 2016-08-03 Huawei Technologies Co., Ltd. Tunable laser and method of tuning a laser
CN108732667B (zh) 2017-04-17 2021-01-05 华为技术有限公司 一种超结构光栅和可调谐激光器
CN121035762A (zh) * 2025-10-24 2025-11-28 长春理工大学 一种低发散角窄线宽高功率半导体激光器

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* Cited by examiner, † Cited by third party
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JPS59154086A (ja) * 1983-02-22 1984-09-03 Nec Corp 周波数安定化半導体レ−ザ
JPS63229796A (ja) * 1987-03-18 1988-09-26 Fujitsu Ltd 光半導体素子
JP3220259B2 (ja) * 1992-10-10 2001-10-22 アンリツ株式会社 レーザ装置
JPH06175169A (ja) * 1992-12-03 1994-06-24 Nippon Telegr & Teleph Corp <Ntt> 光周波数変換素子

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