JP4690421B2 - タイプｉｉの広帯域または多色ｌｅｄ - Google Patents

タイプｉｉの広帯域または多色ｌｅｄ Download PDF

Info

Publication number
JP4690421B2
JP4690421B2 JP2007545466A JP2007545466A JP4690421B2 JP 4690421 B2 JP4690421 B2 JP 4690421B2 JP 2007545466 A JP2007545466 A JP 2007545466A JP 2007545466 A JP2007545466 A JP 2007545466A JP 4690421 B2 JP4690421 B2 JP 4690421B2
Authority
JP
Japan
Prior art keywords
type
interfaces
interface
led
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007545466A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008523617A5 (enExample
JP2008523617A (ja
Inventor
ジェイ． ミラー，トーマス
エー． ハッセ，マイケル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2008523617A publication Critical patent/JP2008523617A/ja
Publication of JP2008523617A5 publication Critical patent/JP2008523617A5/ja
Application granted granted Critical
Publication of JP4690421B2 publication Critical patent/JP4690421B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
JP2007545466A 2004-12-09 2005-10-28 タイプｉｉの広帯域または多色ｌｅｄ Expired - Fee Related JP4690421B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/009,218 2004-12-09
US11/009,218 US7719015B2 (en) 2004-12-09 2004-12-09 Type II broadband or polychromatic LED's
PCT/US2005/039100 WO2006062615A1 (en) 2004-12-09 2005-10-28 Type ii broadband or polychromatic led's

Publications (3)

Publication Number Publication Date
JP2008523617A JP2008523617A (ja) 2008-07-03
JP2008523617A5 JP2008523617A5 (enExample) 2008-12-18
JP4690421B2 true JP4690421B2 (ja) 2011-06-01

Family

ID=35954116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007545466A Expired - Fee Related JP4690421B2 (ja) 2004-12-09 2005-10-28 タイプｉｉの広帯域または多色ｌｅｄ

Country Status (7)

Country Link
US (2) US7719015B2 (enExample)
EP (1) EP1825527A1 (enExample)
JP (1) JP4690421B2 (enExample)
KR (1) KR101164702B1 (enExample)
CN (1) CN101076899A (enExample)
TW (1) TW200625697A (enExample)
WO (1) WO2006062615A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US8005696B2 (en) * 2006-01-18 2011-08-23 Ita Software, Inc. Incremental searching in multi-passenger multi-route travel planning
US8589195B2 (en) * 2006-01-18 2013-11-19 Google Inc. Multi-passenger multi-route travel planning
US20070168854A1 (en) * 2006-01-18 2007-07-19 De Marcken Carl G User interface for presentation of solutions in multi-passenger multi-route travel planning
US8005695B2 (en) 2006-01-18 2011-08-23 Ita Software, Inc. Bias of queries for multi-passenger multi-route travel planning
US8185418B2 (en) * 2006-01-18 2012-05-22 Google Inc. Multi-passenger multi-route travel planning
US8306835B2 (en) * 2006-01-18 2012-11-06 Google Inc. User interface for inputting multi-passenger multi-route travel planning query
US8185419B2 (en) * 2006-01-18 2012-05-22 Google Inc. Incremental searching with partial solutions for multi-passenger multi-route travel planning
US7921022B2 (en) * 2006-01-18 2011-04-05 Ita Software, Inc. Multi-passenger multi-route travel planning
WO2009148717A2 (en) * 2008-06-05 2009-12-10 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
EP2313800A4 (en) 2008-07-10 2014-03-19 3M Innovative Properties Co VISCOELASTIC LIGHT GUIDE
EP3026471A1 (en) 2008-08-08 2016-06-01 3M Innovative Properties Company Lightguide having a viscoelastic layer for managing light
US8192048B2 (en) * 2009-04-22 2012-06-05 3M Innovative Properties Company Lighting assemblies and systems
JP6024278B2 (ja) * 2012-08-10 2016-11-16 住友電気工業株式会社 発光素子
CN109950374B (zh) * 2019-04-02 2021-04-16 南通大学 一种氮化物量子阱结构深紫外发光二极管

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4527179A (en) 1981-02-09 1985-07-02 Semiconductor Energy Laboratory Co., Ltd. Non-single-crystal light emitting semiconductor device
FR2538171B1 (fr) 1982-12-21 1986-02-28 Thomson Csf Diode electroluminescente a emission de surface
US4688068A (en) 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
JPH06244506A (ja) * 1993-02-19 1994-09-02 Sony Corp 半導体表示装置及びその製造方法
US5459337A (en) * 1993-02-19 1995-10-17 Sony Corporation Semiconductor display device with red, green and blue emission
JPH06268331A (ja) 1993-03-11 1994-09-22 Toshiba Corp 半導体発光装置
JP2991616B2 (ja) * 1994-06-30 1999-12-20 シャープ株式会社 半導体発光素子
US5646419A (en) * 1995-04-07 1997-07-08 California Institute Of Technology n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same
DE19542241C2 (de) 1995-11-13 2003-01-09 Siemens Ag Optoelektronisches Bauelement in II-VI-Halbleitermaterial
JPH09181398A (ja) 1995-12-25 1997-07-11 Sony Corp 半導体発光素子
US5889295A (en) 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
DE19703615A1 (de) 1997-01-31 1998-08-06 Siemens Ag Optoelektronisches Halbleiterbauelement
DE19729396A1 (de) 1997-07-09 1999-01-14 Siemens Ag Elektrischer Kontakt für ein II-VI-Halbleiterbauelement und Verfahren zum Herstellen des elektrischen Kontaktes
TW411486B (en) 1998-01-17 2000-11-11 Hanbekku Corp Horizontal reaction furnace for manufacturing compound semiconductor
JP3559446B2 (ja) 1998-03-23 2004-09-02 株式会社東芝 半導体発光素子および半導体発光装置
US6294795B1 (en) 1998-04-28 2001-09-25 Canare Electric Co., Ltd. Light-receiving device with quantum-wave interference layers
TW406442B (en) 1998-07-09 2000-09-21 Sumitomo Electric Industries White colored LED and intermediate colored LED
US6252896B1 (en) * 1999-03-05 2001-06-26 Agilent Technologies, Inc. Long-Wavelength VCSEL using buried bragg reflectors
US6303404B1 (en) 1999-05-28 2001-10-16 Yong Tae Moon Method for fabricating white light emitting diode using InGaN phase separation
WO2000076005A1 (en) 1999-06-04 2000-12-14 Trustees Of Boston University Photon recycling semiconductor multi-wavelength light-emitting diodes
DE19952932C1 (de) 1999-11-03 2001-05-03 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit breitbandiger Anregung
US6504171B1 (en) 2000-01-24 2003-01-07 Lumileds Lighting, U.S., Llc Chirped multi-well active region LED
JP3486900B2 (ja) * 2000-02-15 2004-01-13 ソニー株式会社 発光装置およびそれを用いた光装置
EP1264353A2 (en) 2000-03-06 2002-12-11 Teledyne Lighting and Display Products, Inc. Lighting apparatus having quantum dot layer
JP4008656B2 (ja) 2000-12-27 2007-11-14 株式会社東芝 半導体発光装置
TW497277B (en) * 2000-03-10 2002-08-01 Toshiba Corp Semiconductor light emitting device and method for manufacturing the same
KR100382481B1 (ko) 2000-06-09 2003-05-01 엘지전자 주식회사 백색 발광 다이오드 소자 및 그 제조 방법
DE10036940A1 (de) 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lumineszenz-Konversions-LED
JP2002217456A (ja) 2001-01-19 2002-08-02 Ngk Insulators Ltd 半導体発光素子
JP2002222989A (ja) 2001-01-26 2002-08-09 Toshiba Corp 半導体発光素子
US6711194B2 (en) * 2001-02-08 2004-03-23 The Furukawa Electric Co., Ltd. High output power semiconductor laser diode
KR100422944B1 (ko) 2001-05-31 2004-03-12 삼성전기주식회사 반도체 엘이디(ｌｅｄ) 소자
JP3791765B2 (ja) 2001-06-08 2006-06-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US6837605B2 (en) 2001-11-28 2005-01-04 Osram Opto Semiconductors Gmbh Led illumination system
US6711195B2 (en) * 2002-02-28 2004-03-23 Agilent Technologies, Inc. Long-wavelength photonic device with GaAsSb quantum-well layer
US6831306B1 (en) * 2002-03-06 2004-12-14 Daktronics, Inc. Extended length light emitting diode
CA2427559A1 (en) 2002-05-15 2003-11-15 Sumitomo Electric Industries, Ltd. White color light emitting device
JP2004047748A (ja) 2002-07-12 2004-02-12 Stanley Electric Co Ltd 発光ダイオード
JP2004072047A (ja) 2002-08-09 2004-03-04 Sumitomo Electric Ind Ltd 白色発光素子、白色発光素子用基板および白色発光素子用基板の製造方法
US6791104B2 (en) 2002-09-26 2004-09-14 Wisconsin Alumni Research Foundation Type II quantum well optoelectronic devices
MY149573A (en) 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
TW591811B (en) 2003-01-02 2004-06-11 Epitech Technology Corp Ltd Color mixing light emitting diode
JP3717480B2 (ja) 2003-01-27 2005-11-16 ローム株式会社 半導体発光装置
TWI289937B (en) 2003-03-04 2007-11-11 Topco Scient Co Ltd White light LED
EP1473771A1 (en) 2003-04-14 2004-11-03 Epitech Corporation, Ltd. Color mixing light emitting diode
US7126160B2 (en) 2004-06-18 2006-10-24 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7223998B2 (en) 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
US20060081858A1 (en) 2004-10-14 2006-04-20 Chung-Hsiang Lin Light emitting device with omnidirectional reflectors
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US9018619B2 (en) * 2006-10-09 2015-04-28 Cree, Inc. Quantum wells for light conversion

Also Published As

Publication number Publication date
EP1825527A1 (en) 2007-08-29
US20100181581A1 (en) 2010-07-22
CN101076899A (zh) 2007-11-21
US8148742B2 (en) 2012-04-03
KR20070093093A (ko) 2007-09-17
JP2008523617A (ja) 2008-07-03
TW200625697A (en) 2006-07-16
US7719015B2 (en) 2010-05-18
WO2006062615A1 (en) 2006-06-15
US20060124938A1 (en) 2006-06-15
KR101164702B1 (ko) 2012-07-11

Similar Documents

Publication Publication Date Title
JP5059617B2 (ja) 多色、広帯域または「白色」発光用の適合型短波長ｌｅｄ
US8148741B2 (en) Polychromatic LED's and related semiconductor devices
US8148742B2 (en) Type II broadband or polychromatic LEDs
US7902542B2 (en) Adapted LED device with re-emitting semiconductor construction
US8455903B2 (en) Non-radiatively pumped wavelength converter
KR20110031237A (ko) 안정한 광원

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081027

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081027

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100824

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101119

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110118

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110217

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140225

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees