JP4688417B2 - ニオブ酸リチウムデバイスを安定化させるための緩衝層構造 - Google Patents
ニオブ酸リチウムデバイスを安定化させるための緩衝層構造 Download PDFInfo
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- JP4688417B2 JP4688417B2 JP2003560642A JP2003560642A JP4688417B2 JP 4688417 B2 JP4688417 B2 JP 4688417B2 JP 2003560642 A JP2003560642 A JP 2003560642A JP 2003560642 A JP2003560642 A JP 2003560642A JP 4688417 B2 JP4688417 B2 JP 4688417B2
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- JP
- Japan
- Prior art keywords
- buffer layer
- optical waveguide
- titanium oxynitride
- silicon titanium
- electro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/07—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 buffer layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/21—Thermal instability, i.e. DC drift, of an optical modulator; Arrangements or methods for the reduction thereof
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Claims (6)
- 上面及び下面を有する電気−光学結晶基板と、
前記電気−光学結晶基板の前記上面又は前記下面の一方の面内に形成された光導波路と、
前記光導波路の上に配置され、前記光導波路に電界を印加する少なくとも1つの電極と、
前記光導波路と前記少なくとも1つの電極との間に配置されているシリコンチタンオキシニトライド層と、
前記シリコンチタンオキシニトライド層を、前記光導波路が形成された面の反対側にある前記電気−光学結晶基板の別の面に相互接続するコネクタと、
前記シリコンチタンオキシニトライド層と前記電気−光学結晶基板との間に配置され、周期表の列3〜16の金属を金属又は酸化物の形態でドープされた、付加的なシリコンチタンオキシニトライド層と
を備える、光導波路型デバイス。 - 上面及び下面を有する電気−光学結晶基板と、
前記電気−光学結晶基板の前記上面又は前記下面の一方の面内に形成された光導波路と、
前記光導波路の上に配置され、前記光導波路に電界を印加する少なくとも1つの電極と、
周期表の列3〜16の金属を金属又は酸化物の形態でドープされたシリコンチタンオキシニトライド層であり、当該シリコンチタンオキシライド層におけるチタンに対するシリコンの比が勾配変化を持つように形成されていると共に前記光導波路と前記少なくとも1つの電極との間に配置されている、前記シリコンチタンオキシニトライド層と、
前記シリコンチタンオキシニトライド層を、前記光導波路が形成された面の反対側にある前記電気−光学結晶基板の別の面に相互接続するコネクタと、
を備える、光導波路型デバイス。 - Z面をもつ上面とZ面をもつ下面とを有するZカットの電気−光学結晶基板と、
前記電気−光学結晶基板の前記上面内に形成された光導波路と、
前記光導波路内で光信号を光学的に閉じ込めるために前記電気−光学結晶基板の上面に配置された非ドープの二酸化シリコン層と、
シリコン、Chemical Abstracts Service(CAS)方式の周期表の列4(IVB)の元素、酸素及び窒素を含む第2の緩衝層と、
前記電気−光学結晶基板と前記第2の緩衝層との間に配置されており、シリコン、Chemical Abstracts Service(CAS)方式の周期表の列4(IVB)の元素、酸素及び窒素を含み、周期表の列3〜16の金属が金属又は酸化物の形態でドープされた第1の緩衝層と、
前記第2の緩衝層上に配置され、前記光導波路に電界を印加する少なくとも1つの電極と、
前記第2の緩衝層を前記Zカットの電気−光学結晶基板の前記下面に相互接続するコネクタとを備える、光導波路型デバイス。 - 前記第1の緩衝層における酸素に対する窒素の比が勾配変化を持つように形成されている、請求項3に記載の光導波路型デバイス。
- 前記第1の緩衝層における酸素に対する窒素の比が前記第2の緩衝層における酸素に対する窒素の比より小さい、請求項3に記載の光導波路型デバイス。
- 前記第1の緩衝層におけるChemical Abstracts Service(CAS)方式の周期表の列4(IVB)の元素に対するシリコンの比が、前記第2の緩衝層におけるChemical Abstracts Service(CAS)方式の周期表の列4(IVB)の元素に対するシリコンの比より大きい、請求項3に記載の光導波路型デバイス。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/035,193 US6654512B2 (en) | 2002-01-04 | 2002-01-04 | Buffer layer structures for stabilization of a lithium niobate device |
US10/035,193 | 2002-01-04 | ||
US10/143,885 US6661934B2 (en) | 2002-01-04 | 2002-05-14 | Buffer layer structures for stabilization of a lithium niobate device |
US10/143,885 | 2002-05-14 | ||
PCT/US2002/039192 WO2003060605A1 (en) | 2002-01-04 | 2002-12-09 | Buffer layer structures for stabilization of a lithium niobate device |
Publications (4)
Publication Number | Publication Date |
---|---|
JP2005515499A JP2005515499A (ja) | 2005-05-26 |
JP2005515499A6 JP2005515499A6 (ja) | 2005-08-04 |
JP2005515499A5 JP2005515499A5 (ja) | 2006-02-02 |
JP4688417B2 true JP4688417B2 (ja) | 2011-05-25 |
Family
ID=21881212
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003560642A Expired - Fee Related JP4688417B2 (ja) | 2002-01-04 | 2002-12-09 | ニオブ酸リチウムデバイスを安定化させるための緩衝層構造 |
JP2003558588A Expired - Fee Related JP4642356B2 (ja) | 2002-01-04 | 2003-01-06 | ニオブ酸リチウムデバイスを安定化させるための緩衝層構造 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003558588A Expired - Fee Related JP4642356B2 (ja) | 2002-01-04 | 2003-01-06 | ニオブ酸リチウムデバイスを安定化させるための緩衝層構造 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6654512B2 (ja) |
EP (1) | EP1463974B1 (ja) |
JP (2) | JP4688417B2 (ja) |
AT (1) | ATE357009T1 (ja) |
AU (1) | AU2003206392A1 (ja) |
DE (1) | DE60312473T2 (ja) |
WO (1) | WO2003058336A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6654512B2 (en) * | 2002-01-04 | 2003-11-25 | Codeon Corporation | Buffer layer structures for stabilization of a lithium niobate device |
JP4137680B2 (ja) * | 2003-03-31 | 2008-08-20 | 住友大阪セメント株式会社 | 光制御素子の製造方法 |
US20060135926A1 (en) * | 2004-12-16 | 2006-06-22 | Kimberly-Clark Worldwide, Inc. | Wrapper component for personal care articles having an easy opening and closing feature |
US7231101B2 (en) * | 2005-04-18 | 2007-06-12 | Jds Uniphase Corporation | Electro-optic waveguide device capable of suppressing bias point DC drift and thermal bias point shift |
JP2007101641A (ja) * | 2005-09-30 | 2007-04-19 | Sumitomo Osaka Cement Co Ltd | 光変調器及びその製造方法 |
JP2007322599A (ja) * | 2006-05-31 | 2007-12-13 | Fujitsu Ltd | 光デバイス |
US7936593B2 (en) * | 2008-04-08 | 2011-05-03 | Ovonyx, Inc. | Reducing drift in chalcogenide devices |
US7856156B2 (en) * | 2008-08-22 | 2010-12-21 | The Boeing Company | Lithium niobate modulator having a doped semiconductor structure for the mitigation of DC bias drift |
JP2013025283A (ja) * | 2011-07-26 | 2013-02-04 | Sumitomo Osaka Cement Co Ltd | 光導波路素子 |
JP2013037243A (ja) * | 2011-08-09 | 2013-02-21 | Fujitsu Optical Components Ltd | 光変調器 |
JP2021051269A (ja) * | 2019-09-26 | 2021-04-01 | Tdk株式会社 | 光変調器 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005515485A (ja) * | 2002-01-04 | 2005-05-26 | コディオン コーポレイション | ニオブ酸リチウムデバイスを安定化させるための緩衝層構造 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4701008A (en) * | 1984-08-10 | 1987-10-20 | Motorola, Inc. | Optical waveguide including superstrate of niobium or silicon oxynitride and method of making same |
US5153930A (en) * | 1990-01-04 | 1992-10-06 | Smiths Industries Aerospace & Defense Systems, Inc. | Device employing a substrate of a material that exhibits the pyroelectric effect |
DE69226761T2 (de) * | 1991-12-27 | 1999-01-14 | Fujitsu Ltd | Optische Wellenleiteranordnung mit reduzierter DC-Drift |
JP2555942B2 (ja) * | 1993-08-27 | 1996-11-20 | 日本電気株式会社 | 光制御デバイス |
US5388170A (en) | 1993-11-22 | 1995-02-07 | At&T Corp. | Electrooptic device structure and method for reducing thermal effects in optical waveguide modulators |
CH693368A5 (de) * | 1994-12-09 | 2003-06-30 | Unaxis Balzers Ag | Verfahren zur Herstellung eines Beugungsgitters, Lichtleiterbauteil sowie deren Verwendungen. |
JP2674535B2 (ja) * | 1994-12-15 | 1997-11-12 | 日本電気株式会社 | 光制御デバイス |
US5949944A (en) | 1997-10-02 | 1999-09-07 | Lucent Technologies Inc. | Apparatus and method for dissipating charge from lithium niobate devices |
US20020136905A1 (en) * | 1999-11-24 | 2002-09-26 | Medwick Paul A. | Low shading coefficient and low emissivity coatings and coated articles |
US6395650B1 (en) * | 2000-10-23 | 2002-05-28 | International Business Machines Corporation | Methods for forming metal oxide layers with enhanced purity |
-
2002
- 2002-01-04 US US10/035,193 patent/US6654512B2/en not_active Expired - Lifetime
- 2002-05-14 US US10/143,885 patent/US6661934B2/en not_active Expired - Lifetime
- 2002-12-09 JP JP2003560642A patent/JP4688417B2/ja not_active Expired - Fee Related
-
2003
- 2003-01-06 AT AT03703690T patent/ATE357009T1/de not_active IP Right Cessation
- 2003-01-06 EP EP03703690A patent/EP1463974B1/en not_active Expired - Lifetime
- 2003-01-06 DE DE60312473T patent/DE60312473T2/de not_active Expired - Lifetime
- 2003-01-06 WO PCT/US2003/000213 patent/WO2003058336A1/en active IP Right Grant
- 2003-01-06 JP JP2003558588A patent/JP4642356B2/ja not_active Expired - Fee Related
- 2003-01-06 AU AU2003206392A patent/AU2003206392A1/en not_active Abandoned
Patent Citations (1)
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JP2005515485A (ja) * | 2002-01-04 | 2005-05-26 | コディオン コーポレイション | ニオブ酸リチウムデバイスを安定化させるための緩衝層構造 |
Also Published As
Publication number | Publication date |
---|---|
JP2005515485A (ja) | 2005-05-26 |
AU2003206392A1 (en) | 2003-07-24 |
EP1463974B1 (en) | 2007-03-14 |
US20030128930A1 (en) | 2003-07-10 |
JP2005515499A (ja) | 2005-05-26 |
US6654512B2 (en) | 2003-11-25 |
JP4642356B2 (ja) | 2011-03-02 |
US6661934B2 (en) | 2003-12-09 |
WO2003058336A1 (en) | 2003-07-17 |
DE60312473D1 (de) | 2007-04-26 |
ATE357009T1 (de) | 2007-04-15 |
EP1463974A1 (en) | 2004-10-06 |
US20030128954A1 (en) | 2003-07-10 |
DE60312473T2 (de) | 2008-03-20 |
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