JP4682504B2 - Solid-state imaging device, manufacturing method thereof, and electronic apparatus - Google Patents

Description

  The present invention relates to a solid-state imaging device such as a CMOS image sensor or a CCD image sensor, a manufacturing method thereof, and an electronic apparatus having the solid-state imaging device.

Conventionally, in a solid-state imaging device such as a CMOS image sensor or a CCD image sensor, a plurality of pixels by photoelectric conversion means (photodiodes) are arranged on a semiconductor substrate, for example, in a two-dimensional array to form an imaging pixel unit, A multilayer wiring layer in which various signal wirings and a light-shielding film are disposed on the upper layer, and an on-chip color filter and on-chip microlens are disposed on the upper layer via a passivation layer.
Recently, in particular, with the increase in the number of pixels (high integration) and high functionality of the imaging pixel portion, the number of wiring layers has increased and the layout pattern has become more complicated. There is a tendency for the distance between an optical system such as a filter and a microlens and a light receiving surface of a photodiode (hereinafter referred to as a sensor light receiving unit) to increase.
In addition, the lens shape of the microlens tends to be miniaturized due to the miniaturization accompanying the increase in the number of pixels in the imaging pixel portion.

However, as described above, when the distance between the photodiode and the microlens is increased or the microlens is miniaturized, the incident angle of the chief ray is different between the central portion and the peripheral portion of the image pickup pixel portion. The depth at which incident light is photoelectrically converted in the semiconductor substrate changes, and the amount of shading changes depending on the wavelength of the incident light. The amount of light received by the sensor light receiving portion changes between the center and the periphery of the screen. It has become difficult to keep the sensitivity uniform.
In particular, when the area per pixel is reduced and the lens size is reduced, the incident angle of light with respect to the peripheral portion of the screen is increased. It tends to be asymmetrical in the vertical and horizontal directions, and for example, there may be non-uniform sensitivity at the vertical and horizontal edges of the screen.
In particular, in a CMOS image sensor in which a plurality of wirings such as readout gates, signal wirings, and power supply wirings exist in the vicinity of the photodiode, the effective pixel region is likely to be asymmetric, and the above problem becomes significant.

In order to deal with such problems, conventionally, a device has been devised to increase the sensitivity of the periphery of the screen by appropriately shifting the position of each lens and the position of the opening of the light shielding film according to the position of each pixel in the imaging pixel unit. Has been made.
For example, FIG. 7 is a plan view showing the positional relationship between each pixel, the light-shielding film opening, and the condensing lens in the imaging pixel unit of such a conventional solid-state imaging device, and FIG. 8 is the imaging pixel unit shown in FIG. It is explanatory drawing which shows the sensitivity fall in the diagonal lines AA 'and BB'.
In FIG. 7, the light-shielding film opening and the condensing lens 11 are arranged at positions where the centers coincide with the pixels 10 in the central portion of the screen, but light is incident on each pixel 10 in the peripheral portion of the screen. It is arranged at a position shifted in the direction.
Further, a readout gate portion 10B for reading the signal charge of the sensor light receiving portion 10A is formed at the lower left corner of the sensor light receiving portion 10A of each pixel 10.

Accordingly, the shape of the sensor light receiving unit 10A of each pixel 10 is asymmetrical in the vertical and horizontal directions from the center of the screen due to the presence of the readout gate unit 10B. The smaller the pixel area 10, the more the presence of the readout gate unit 10B. Greatly affects the asymmetry.
For this reason, even in a solid-state imaging device in which the arrangement of the light shielding film opening and the condensing lens is shifted, the sensitivity decreases in the pixel 10 near the point A, for example, as shown in FIG. Is noticeable and changes non-uniformly vertically and horizontally.

As a proposal for optimizing the amount of light incident on each pixel, the lens, filter, light shielding film, sensor light reception depending on the distance from the center of the imaging area of each pixel and the height from the surface of the light receiving portion of the lens. There are known ones that correct (correct) the arrangement of parts and the like (Patent Documents 1 to 4). However, even in these proposals, it is difficult to effectively cope with the asymmetry of the sensor light receiving unit as described above. The reason for this is that the distance from the central part of the imaging region to the light receiving part is not considered as to what position on the surface of the light receiving part, and although the arrangement of each component in the pixel is corrected, Considering that only the light condensed by the lens is incident on the surface of the light receiving unit, the thickness in the depth direction of the photoelectric conversion unit in which photoelectric conversion actually occurs is not considered at all.
Japanese Patent Laid-Open No. 5-328233 JP 2000-349268 A JP 2001-160973 A JP 2001-210812 A

  Accordingly, an object of the present invention is to provide a solid-state imaging device, a manufacturing method thereof, and a solid-state imaging device capable of obtaining an appropriate incident state in each pixel and capable of improving the light receiving efficiency and uniformity of sensitivity of each pixel. It is to provide an electronic device having the above.

  In order to achieve the above object, a solid-state imaging device of the present invention has an imaging region including a plurality of pixels arranged two-dimensionally, and the pixels include a condenser lens and a photoelectric conversion unit. The light receiving surface has an asymmetric shape with respect to at least one direction on the light receiving surface due to the chipped portion, and the condensing lens of the pixel located in the central portion of the imaging region is above the photoelectric conversion unit, and The condenser lens is formed so that the center of the condenser lens is positioned substantially on the center of the light receiving surface, and the condenser lens of the pixel located outside the central part of the imaging region is spaced outward from the central part of the imaging region. The focusing lens of the pixel located is formed such that the center of the focusing lens is shifted from the approximate center of the light receiving surface toward the central portion of the imaging region, and is equal to the outside direction from the central portion of the imaging region. Condensing each pixel located Shift amount of lens is characterized in that differently depending on the orientation with respect to the central portion of the imaging area of the chipping portion of each pixel.

  In addition, the solid-state imaging device of the present invention has an imaging region including a plurality of pixels arranged in a two-dimensional array, the pixels include a condenser lens and a photoelectric conversion unit, and the condenser lens of the imaging region The condensing lens of the pixel located farther away from the central portion is formed by shifting to the central portion side of the imaging region, and the shift amount of the condensing lens is determined by the light receiving surface of the photoelectric conversion unit from the condensing lens. The amount of light incident on the photoelectric conversion unit is set to increase based on the distance to the photoelectric conversion unit and the formation depth of the photoelectric conversion unit in the semiconductor layer.

  The solid-state imaging device of the present invention has an imaging region including a plurality of pixels arranged two-dimensionally, the pixel has a photoelectric conversion unit, and at least a part of the plurality of pixels has the photoelectric The bottom part of the conversion part is formed so as to be shifted outward from the central part of the imaging region with respect to the light receiving surface of the photoelectric conversion part.

  The present invention is an electronic apparatus having a solid-state imaging device, the solid-state imaging device having an imaging region including a plurality of pixels arranged in a two-dimensional array, the pixels including a condenser lens, a photoelectric conversion unit, and the like. The condensing lens is formed such that the condensing lens of the pixel located farther away from the central portion of the imaging region is shifted toward the central portion side of the imaging region, and the shift amount of the condensing lens is The photoelectric conversion unit is set based on the distance from the condenser lens to the light receiving surface of the photoelectric conversion unit and the formation depth of the photoelectric conversion unit in the semiconductor layer, and the bottom of the photoelectric conversion unit is received by the photoelectric conversion unit It is characterized by being formed so as to be shifted outward from the center of the imaging region with respect to the surface.

  Further, the present invention is a method for manufacturing a solid-state imaging device, and includes a step of forming a photoelectric conversion unit and a condensing lens for each pixel in the imaging region, and the condensing lens is formed from a central portion of the imaging region. The condensing lens of the pixel located away from the outside is formed by shifting toward the center part side of the imaging region, and the shift amount of the condensing lens is from the condensing lens to the light receiving surface of the photoelectric conversion unit. Based on the distance and the formation depth position of the photoelectric conversion unit in the semiconductor layer, the amount of light incident on the photoelectric conversion unit is set to increase.

  In the solid-state imaging device, the manufacturing method thereof, and the electronic apparatus having the solid-state imaging device of the present invention, it is possible to obtain an appropriate incident state in each pixel, and it is possible to improve the light receiving efficiency of each pixel and make the sensitivity uniform. At the same time, it is possible to suppress color mixing associated with reflected light generated in the wiring layer, and to improve the image quality of the solid-state imaging device.

  The solid-state imaging device according to this embodiment is effective for a photoelectric conversion unit having an asymmetrical shape in the vertical and horizontal directions, and the condensing lens of the photoelectric conversion unit is located outward from the central portion of the imaging region. The condensing lens of the pixel is formed by shifting toward the central portion of the imaging region, and the shift amount of the condensing lens is the height from the surface of the photoelectric conversion unit of the condensing lens and the substrate depth direction of the photoelectric conversion unit The bottom of the photoelectric conversion part is formed by shifting from the central part of the imaging region to the peripheral part rather than the surface part. Thus, the amount of light incident on each pixel is optimized, and the light receiving efficiency of each pixel is improved and the sensitivity is made uniform.

Embodiments of a solid-state imaging device and a manufacturing method thereof according to the present invention will be described below.
1 and 2 are enlarged cross-sectional views showing a stacked structure of a solid-state imaging device according to an embodiment of the present invention. FIG. 1 shows a pixel structure in the center of the screen, and FIG. 2 shows pixels in the periphery of the screen. The structure is shown.
3 is a plan view showing the positional relationship between each pixel, the light shielding film opening, and the condensing lens in the imaging pixel portion of the solid-state imaging device according to the embodiment of the present invention, and FIG. 4 is the imaging shown in FIG. It is explanatory drawing which shows the sensitivity fall in diagonal line AA 'and BB' of a pixel part.

The solid-state imaging device of the present embodiment is formed as, for example, a CMOS image sensor. For each pixel, a photodiode (PD) as a photoelectric conversion unit and a signal charge generated and accumulated by the photodiode are used. There is provided a readout circuit that reads out, converts it into an electrical signal, and outputs it to the outside of the imaging pixel unit.
Various types of readout circuits have been proposed. For example, a signal charge generated by a photodiode is transferred to a floating diffusion (FD) portion, and a potential fluctuation in the FD portion is an electric signal. It is assumed that there are an amplifying transistor for converting the output signal to the output signal, a read transistor for outputting the output signal of the amplifying transistor to the output signal line, a reset transistor for resetting the potential of the FD portion, and the like.

1 and 2, a photodiode 110 is provided in the upper layer portion of the silicon substrate 100 corresponding to each pixel, a transfer gate portion 120 and an FD portion 130 are provided adjacent to the photodiode 110, and Other logic transistors 140 and the like are provided. In addition, an element isolation layer 150 made of LOCOS or the like is provided on the upper layer portion of the silicon substrate 100.
The photodiode 110 is formed by providing a p + type region on the outermost surface of the silicon substrate 100 and the pixel isolation region and forming an n type region on the inner side, and a photon that has passed through the p + type region is incident on the n type region. By doing so, holes and electrons are separated, and the electrons are accumulated in the depletion layer formed in the lower layer of the n-type region.
In the photodiode 110 of this embodiment, a low concentration n-type region (a plurality of n-type regions having different impurity concentrations may be provided) is formed at a relatively deep position in the silicon substrate 100, and a depletion layer is formed. By enlarging, the charge accumulation amount is expanded to improve the sensitivity.
Therefore, the sensitivity of each pixel is determined by the amount of light incident on the n-type region as a photoelectric conversion unit in the photodiode 110, and the sensitivity of each pixel depends on the incident efficiency with respect to the photoelectric conversion unit.

Various gate electrodes 170, 180, and 190 are provided on the silicon substrate 100 via an insulating film 160 such as a silicon oxide film. In addition, a multilayer wiring layer is provided on the insulating film 160 with the planarizing film 200 interposed therebetween.
In this multilayer wiring layer, three layers of wirings 220, 230, and 240 are provided via an insulating film 210 in the illustrated example. The lower wiring 220 constitutes a light shielding film, and has an opening 210A corresponding to the photodiode 110, and light (arrow a indicates a principal ray) enters the photodiode 110 through the opening 210A. .
The wirings 220, 230, and 240 are connected to each other by contacts 220A, 230A, and 240A between the layers.
An on-chip color filter (optical filter) 250 is formed on the multilayer wiring layer via a passivation layer (not shown), and an on-chip microlens (condensing lens) is formed on the upper layer. ) 260 is arranged.

Further, in the solid-state imaging device of the present embodiment, the chief ray a is incident at a right angle in the pixel at the center of the screen shown in FIG. 1, so that the microlens 260, the color filter 250, the wirings 220, 230, 240, photo The positional relationship of the diode 110 and the like is straightly arranged in the vertical direction (up and down direction in FIG. 1).
On the other hand, in the pixel at the peripheral portion of the screen shown in FIG. 2, the principal ray a is incident at an incident angle θ, so the positional relationship among the microlens 260, the color filter 250, the wirings 220, 230, 240, the photodiode 110, and the like is The elements are arranged along the incident direction according to the incident angle θ to optimize the arrangement of the elements.

In particular, in the present embodiment, the incident angle θ that determines the positional relationship of each element is set to the position of the pixel in the screen (distance from the center), the surface of the silicon substrate 100 from the microlens 260 (the light receiving surface of the photodiode 110). ) And the depth position of the photoelectric conversion portion of the photodiode 110 from the surface of the silicon substrate 100.
That is, in this embodiment, the incident angle θ is set based on the depth position of the photoelectric conversion portion of the photodiode 110, not the surface of the substrate on which the light is incident, and the light is collected at a position where the photoelectric conversion is substantially performed. The light receiving efficiency (that is, sensitivity) of each pixel is improved.
Note that a value determined corresponding to the depth of the n-type region of the photodiode 110 is used as the depth position of the photoelectric conversion unit used here.

Further, as shown in FIG. 2, in the pixels in the peripheral portion of the screen, the photoelectric conversion portion (n-type region) of the photodiode 110 corresponds to the incident angle θ from the central portion of the imaging region (imaging pixel portion) to the periphery. It is formed in a state inclined in the part direction.
In this way, by forming the photoelectric conversion part of the photodiode 110 in an inclined state corresponding to the incident angle θ, the principal ray incident at an angle can be efficiently incident on the photoelectric conversion part (n-type region). This improves the light receiving efficiency (ie, sensitivity) of the pixels in the periphery of the screen.

Here, the inclination angle of the photoelectric conversion unit may be uniform over the imaging region, or may be larger as the photoelectric conversion unit of the pixel farther from the central portion of the imaging region toward the peripheral portion.
Further, as shown in FIG. 5, the photoelectric conversion unit of the pixel (photodiode) 110 may include an impurity region 110 a formed by ion implantation into a silicon semiconductor a plurality of times (for example, three times). . The impurity region 110a can be formed by ion implantation multiple times with different implantation angles.

Further, as shown in FIG. 3, a reading gate portion (transfer gate 120) 110B for reading the signal charge of the sensor light receiving portion 110A is provided at the lower left corner of the sensor light receiving portion 110A of the pixel (photodiode) 110. (Corresponding to a chipped portion in the range of 2), and a shape in which one corner of a rectangular shape of the sensor light receiving portion is chipped.
For this reason, as described in the conventional example shown in FIG. 7, the shape of each sensor light receiving portion 110A (light receiving surface of the photoelectric conversion portion) is asymmetric in the vertical and horizontal directions due to the presence of the readout gate portion 110B. It becomes an asymmetric rectangular shape with respect to two directions orthogonal to each other. In particular, the sensitivity of the pixel at one corner of the screen (in this case, the lower left portion of the screen (point A side in FIG. 3)) is lower than the sensitivity of the pixels at the other corner.
In the embodiment shown in FIG. 3, the case where the shape of the sensor light receiving unit 110 </ b> A is asymmetrical with respect to two directions orthogonal to each other on the light receiving surface has been described. The shape of the light receiving unit 110A may be asymmetric with respect to at least one of the upper and lower sides or the left and right sides, that is, on the light receiving surface.

Therefore, in this embodiment, as shown in FIG. 3, in the pixel on the A point side, the lens 260 and the light shielding film opening 210A are made larger than the pixels on the A ′, B, and B ′ point sides in the center direction of the imaging region (see FIG. 3), that is, the shift amount of the lens 260 on the A point side and the light shielding film opening 210A is made larger than the shift amount of the lens 260 on the A ′ point side and the light shielding film opening 210A. Increase the position correction amount. As a result, the amount of light received by the readout gate portion 110B of each pixel is made uniform in the pixels at each corner.
Further, as is clear from FIG. 3, the lens 260 and the light-shielding film opening of the pixel 110 on the point A side of the pixel located at an equal distance outward from the center portion of the imaging region, for example, the diagonal line AA ′ of the imaging pixel unit. The shift amount of the portion 210A is larger than the shift amounts of the lens 260 and the light shielding film opening 210A of the pixel 110 on the A ′ point side.
That is, the shift amount of the lens 260 of each pixel located at an equal distance in the outer direction from the central portion O of the imaging region shown in FIG. 3 is an orientation (for example, X1) of the readout gate portion 110B of each pixel with respect to the central portion O of the imaging region. , X2). In other words, even if the pixels are located at an equal distance in the outer direction from the central portion O of the imaging region, if the orientation (for example, X1, X2) of the readout gate unit 110B with respect to the central portion O of the imaging region of each pixel is different, The shift amount of the lens 260 is different.
As a result, the sensitivity distribution of each pixel changes evenly in the vertical and horizontal directions as shown in FIG. 4, and the non-uniformity described in the conventional example can be eliminated.
Here, it is preferable to increase the position correction amount not only for pixels on the line on the A point side but also for pixels near the line on the A point side.

Further, the solid-state imaging device of the present embodiment can be formed by the following manufacturing process, for example.
First, for example, a p-type well region serving as an element formation region is formed on an n-type silicon substrate 100, and an inter-element isolation layer 150 is formed.
Then, elements such as the photodiode 110 and the transistor 140 are formed in the p-type well region by a method such as ion implantation or thermal diffusion. For the n-type region of the photodiode 110, for example, ion implantation with different implantation angles is performed a plurality of times. As a result, an n-type region having a different shape is formed for each pixel by using a plurality of mask processes and a plurality of ion implantations.
Thereafter, an electrode layer and a multilayer wiring layer are formed on the silicon substrate using various film forming techniques and lithography techniques, and a color filter and a microlens are sequentially formed thereon. At this time, the light shielding film opening, the wiring, the color filter, and the microlens are formed at optimized positions according to the positional relationship of each element determined as described above.
In this way, it is possible to improve the light receiving efficiency and obtain a solid-state imaging device in which the sensitivity distribution is uniformed vertically and horizontally.

  According to the solid-state imaging device and the manufacturing method thereof according to the present embodiment, the formation position of the condenser lens (wiring, light shielding film opening) in each pixel is set to the height from the surface of the photoelectric conversion unit of the condenser lens. Based on the thickness of the photoelectric conversion unit in the substrate depth direction, the amount of light incident on the inside of the photoelectric conversion unit is set to be increased, and the bottom of the photoelectric conversion unit is more Since it is formed to shift outward from the central part, it is possible to obtain an appropriate incident state in each pixel, to improve the light receiving efficiency of each pixel, to make the sensitivity uniform, and to prevent color mixing due to reflected light generated in the wiring layer. It is possible to provide a solid-state imaging device capable of suppressing the image quality and improving the image quality.

  In the above description, the on-chip microlens 260 is used as the condensing lens. However, the present invention is not limited to this form, and may be an intralayer lens formed between wiring layers, for example, a concave lens or a convex lens. Either may be sufficient.

  Further, in the above description, the positions of the on-chip lens, the wiring, and the light shielding film (the wiring plays a role) are corrected, and the n-type region of the photodiode has a depth corresponding to the incident angle of the chief ray of the incident light. Although an example in the case of being formed so as to be inclined in the direction is shown, the present invention does not necessarily require all of these configurations, and for example, only the on-chip lens may be arranged at a corrected position. In addition, the n-type region of the photodiode may be configured only to be inclined in the depth direction.

  The above-described correction of the position of the condenser lens or the like is not necessarily performed for all the pixels in the imaging region of the solid-state imaging device, and can be performed only for predetermined pixels. In addition, it is not necessary to use one pixel as a unit of correction, and the same correction can be performed using several adjacent pixels as one unit.

In the above description, the example in which the present invention is applied to a CMOS image sensor has been described. However, the present invention can also be applied to other solid-state imaging devices such as a CCD image sensor. In particular, this is effective when the sensor light receiving portion has an asymmetric shape in the vertical and horizontal directions.
Moreover, although the above-mentioned description demonstrated the example which applied this invention to the solid-state imaging device single-piece | unit, this invention is not restricted to this, For example, as shown in FIG. 6, the solid-state imaging device 60 of the structure mentioned above was mounted. The present invention can be applied to various electronic devices 61 such as communication devices and image processing devices.
The electronic apparatus 61 shown in FIG. 6 includes an optical system 62 that collects subject light on the solid-state imaging device 60 and a peripheral circuit unit 63 that processes signals from the solid-state imaging device 60.
In particular, since the exit pupil distance can be shortened by the structure of the solid-state imaging device described above, the device can be miniaturized by being mounted on a portable device, and the added value of the portable device can be greatly improved. Such portable devices are also included in the present invention.

It is an expanded sectional view which shows the laminated structure of the pixel in the screen center part of the solid-state imaging device by Example 1 of this invention. It is an expanded sectional view which shows the laminated structure of the pixel in the screen peripheral part of the solid-state imaging device by Example 1 of this invention. It is a top view which shows the positional relationship of each pixel in the imaging pixel part of the solid-state imaging device by Example 1 of this invention, a light shielding film opening part, and a condensing lens. It is explanatory drawing which shows the sensitivity fall in diagonal line A-A 'and B-B' of the imaging pixel part shown in FIG. It is explanatory drawing which shows the example at the time of forming the photoelectric conversion part of the pixel concerning this invention by multiple times of ion implantation. It is explanatory drawing which shows the example at the time of applying the solid-state imaging device concerning this invention to an electronic device. It is a top view which shows the positional relationship of each pixel in the imaging pixel part of the conventional solid-state imaging device, a light shielding film opening part, and a condensing lens. It is explanatory drawing which shows the sensitivity fall in diagonal line A-A 'and B-B' of the imaging pixel part shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 ... Silicon substrate, 110 ... Photodiode, 120 ... Transfer gate part, 130 ... FD part, 140 ... Logic transistor, 150 ... Interelement isolation layer, 160 ... Insulating film, 170, 180, 190 ...... Gate electrode, 200... Planarization film, 210... Insulating film, 220, 230, 240 .. Wiring, 220 A, 230 A, 240 A .. Contact, 250 .. On-chip color filter, 260. Lens, 60 ... Solid-state imaging device, 61 ... Electronic equipment.

Claims (14)

A plurality of pixels including a photoelectric conversion unit have an imaging region in which the pixels are two-dimensionally arranged,
Each of the upper layers of the photoelectric conversion units in the plurality of pixels is provided with a condenser lens,
The condensing lens is formed such that the condensing lens of the pixel located away from the central portion of the imaging region is shifted to the central portion side of the imaging region,
The amount of shift of the condensing lens is based on the distance from the condensing lens to the light receiving surface of the photoelectric conversion unit and the formation depth of the photoelectric conversion unit on the semiconductor layer. It is set to be,
The solid-state imaging device in which at least a part of the plurality of pixels is formed such that a bottom portion of the photoelectric conversion unit is shifted outward from a central portion of the imaging region with respect to a light receiving surface of the photoelectric conversion unit . An upper layer of the photoelectric conversion unit is provided with a wiring through an insulating film,
The wiring is set so that light is condensed in the photoelectric conversion unit based on a distance from the condenser lens to a light receiving surface of the photoelectric conversion unit and a formation depth of the photoelectric conversion unit on a semiconductor layer. Arranged along the incident angle of the principal ray
The solid-state imaging device according to claim 1 . The shift amount at the bottom of the photoelectric conversion unit is larger as the pixel is located outward from the center of the imaging region.
The solid-state imaging device according to claim 1 . The photoelectric conversion part is constituted by an impurity region formed by multiple ion implantations into the semiconductor layer.
The solid-state imaging device according to claim 1 . Having an imaging region including a plurality of pixels arranged two-dimensionally;
The pixel has a photoelectric conversion unit,
In at least some of the plurality of pixels, the bottom of the photoelectric conversion unit is formed to be shifted outward from the central portion of the imaging region with respect to the light receiving surface of the photoelectric conversion unit.
Solid-state imaging device. The shift amount at the bottom of the photoelectric conversion unit is larger for pixels located outward from the central portion of the imaging region.
The solid-state imaging device according to claim 5 . The photoelectric conversion part is constituted by an impurity region formed by multiple ion implantations into the semiconductor layer.
The solid-state imaging device according to claim 5 . The impurity region is formed by multiple ion implantations with different implantation angles.
The solid-state imaging device according to claim 7 . A plurality of pixels including a photoelectric conversion unit and a readout electrode have an imaging region in which the pixels are two-dimensionally arranged,
Each of the upper layers of the photoelectric conversion units in the plurality of pixels is provided with a condenser lens,
The condensing lens of the pixel located in the central part of the imaging region is formed so that the center of the condensing lens is located substantially on the center of the photoelectric conversion unit,
As for the condensing lens of the pixel located in a region other than the central portion of the imaging region, the center of the condensing lens is closer to the center of the light receiving surface as the condensing lens of the pixel is located farther from the central portion of the imaging region. Formed by shifting toward the central portion of the imaging region,
In a pixel located at an equal distance from the central portion of the imaging region, a condensing lens is a pixel in which the distance of the readout electrode from the center of the imaging region is longer than the distance from the center of the imaging region to the center of the pixel Solid-state imaging device with a large shift amount. An electronic device having a solid-state imaging device,
The solid-state imaging device
Having an imaging region including a plurality of pixels arranged two-dimensionally;
The pixel has a condenser lens and a photoelectric conversion unit,
The condensing lens is formed by shifting to the central portion side of the imaging region as the condensing lens of the pixel located away from the central portion of the imaging region.
The shift amount of the condensing lens is based on the distance from the condensing lens to the light receiving surface of the photoelectric conversion unit and the formation depth of the photoelectric conversion unit in the semiconductor layer, and the light is collected in the photoelectric conversion unit. Set to be light,
An electronic device in which a bottom portion of the photoelectric conversion unit is formed to shift outward from a central portion of the imaging region with respect to a light receiving surface of the photoelectric conversion unit. Forming a photoelectric conversion unit and a condenser lens for each pixel in the imaging region;
The condensing lens is formed by shifting to the central portion side of the imaging region as the condensing lens of the pixel located away from the central portion of the imaging region.
The amount of shift of the condensing lens is based on the distance from the condensing lens to the light receiving surface of the photoelectric conversion unit and the formation depth position of the photoelectric conversion unit on the semiconductor layer. Set to be focused ,
The manufacturing method of the solid-state imaging device in which the bottom part of the photoelectric conversion part is formed by shifting outward from the center part of the imaging region rather than the surface part . The shift amount at the bottom of the photoelectric conversion unit is larger for pixels located outward from the central portion of the imaging region.
The manufacturing method of the solid-state imaging device of Claim 11 . The photoelectric conversion part is formed by a plurality of impurity ion implantations into the semiconductor layer.
The manufacturing method of the solid-state imaging device of Claim 12 . The plurality of impurity ion implantations have different implantation angles.
A method for manufacturing a solid-state imaging device according to claim 13 .

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