JP4667053B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP4667053B2
JP4667053B2 JP2005021964A JP2005021964A JP4667053B2 JP 4667053 B2 JP4667053 B2 JP 4667053B2 JP 2005021964 A JP2005021964 A JP 2005021964A JP 2005021964 A JP2005021964 A JP 2005021964A JP 4667053 B2 JP4667053 B2 JP 4667053B2
Authority
JP
Japan
Prior art keywords
power supply
units
signal
circuit
control circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005021964A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005243006A5 (enExample
JP2005243006A (ja
Inventor
清 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005021964A priority Critical patent/JP4667053B2/ja
Publication of JP2005243006A publication Critical patent/JP2005243006A/ja
Publication of JP2005243006A5 publication Critical patent/JP2005243006A5/ja
Application granted granted Critical
Publication of JP4667053B2 publication Critical patent/JP4667053B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
JP2005021964A 2004-01-30 2005-01-28 半導体装置 Expired - Fee Related JP4667053B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005021964A JP4667053B2 (ja) 2004-01-30 2005-01-28 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004024822 2004-01-30
JP2004024819 2004-01-30
JP2005021964A JP4667053B2 (ja) 2004-01-30 2005-01-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2005243006A JP2005243006A (ja) 2005-09-08
JP2005243006A5 JP2005243006A5 (enExample) 2007-12-27
JP4667053B2 true JP4667053B2 (ja) 2011-04-06

Family

ID=35024631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005021964A Expired - Fee Related JP4667053B2 (ja) 2004-01-30 2005-01-28 半導体装置

Country Status (1)

Country Link
JP (1) JP4667053B2 (enExample)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6029006A (en) * 1996-12-23 2000-02-22 Motorola, Inc. Data processor with circuit for regulating instruction throughput while powered and method of operation
JPH11296627A (ja) * 1998-04-14 1999-10-29 Mitsubishi Electric Corp 非接触カード,非接触カードのリーダライタ及び非接触カードの制御方法
JP2001189347A (ja) * 2000-01-05 2001-07-10 Seiko Epson Corp 半導体装置及びその製造方法、並びに電子装置
JP3877518B2 (ja) * 2000-12-13 2007-02-07 松下電器産業株式会社 プロセッサの電力制御装置

Also Published As

Publication number Publication date
JP2005243006A (ja) 2005-09-08

Similar Documents

Publication Publication Date Title
US8284625B2 (en) Semiconductor device having memory blocks
JP5634590B2 (ja) 半導体装置
JP5015333B2 (ja) 半導体装置
KR101169262B1 (ko) 반도체 장치
US7868328B2 (en) Semiconductor device having antenna over thin film integrated circuit
US8107303B2 (en) Semiconductor RAM device with writing voltage higher than withstand voltage of select transistor
CN102150268B (zh) 半导体存储器件
KR20070107074A (ko) 메모리 디바이스, 반도체 디바이스, 및 그 구동방법
JP4865248B2 (ja) 半導体装置
JP5159024B2 (ja) 半導体装置
JP4667053B2 (ja) 半導体装置
JP4954537B2 (ja) 半導体装置
US20060267099A1 (en) Semiconductor device and manufacturing method of the same

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071112

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101116

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101125

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110105

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140121

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees