JP4663668B2 - 六角形のナノ板状構造のダイヤモンドの形成方法 - Google Patents
六角形のナノ板状構造のダイヤモンドの形成方法 Download PDFInfo
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- JP4663668B2 JP4663668B2 JP2007083668A JP2007083668A JP4663668B2 JP 4663668 B2 JP4663668 B2 JP 4663668B2 JP 2007083668 A JP2007083668 A JP 2007083668A JP 2007083668 A JP2007083668 A JP 2007083668A JP 4663668 B2 JP4663668 B2 JP 4663668B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/12—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by electrolysis
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Crystallography & Structural Chemistry (AREA)
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- Metallurgy (AREA)
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- Nanotechnology (AREA)
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- Carbon And Carbon Compounds (AREA)
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Description
また、生体適合性原子である炭素を生体適合用材料として生体感知(bio-sensor)の基本になる基板材料としての可能性研究など、多くの分野でナノ結晶のダイヤモンドを利用した研究が進められている。このようなバイオ分野は、特に最近に注目されつつある。
したがって、高温の処理過程を経る必要がない、簡便かつ価格競争力のあるダイヤモンドを合成し得るダイヤモンドの形成方法が求められる。
また、産業への応用のためには、均一な表面、厚さ、大きさ及び模様のナノ板状構造のダイヤモンドの形成方法が必要である。
本発明の他の目的は、均一な表面、厚さ、大きさ及び模様のナノ板状構造のダイヤモンドを形成する方法を提供することにある。
また、これ以外に、このようなナノ板状構造のダイヤモンドの形成方法と異なる実施の形態、または構成要素の変更、追加などによる他の実施の形態の提供が可能である。
本発明では、ナノ型板(nanotemplate)を使用して、電気化学的方法でナノダイヤモンドをエピタキシャル成長させる。このようなナノダイヤモンドは、ナノ大きさであるから、バルクダイヤモンドとは異なる特徴的な性質を示す。
本発明は、ダイヤモンドの前駆体として、水溶液状態の炭素前駆体(CH3 CN、アセトニトリル)及び脂肪族炭化水素誘導体(エタノール、メタノール等)を使用する。
また、陽極酸化アルミニウム(AAO)ナノ型板は、均一な大きさの孔隙(大きさ:1〜 1,000nm)を有し、Co、Ni、Fe、Ptなどを触媒金属として使用した。
図1のAはナノ型板を示す。ナノ型板としては、陽極酸化アルミニウム(AAO:Anodic Aluminum Oxide)ナノ型板または高分子ナノ型板を使用する。
ここでは、200nm大きさの孔隙を有する非晶質陽極酸化アルミニウムナノ型板を使用する場合を示す。
このように形成したナノ板状構造のダイヤモンドをラマン分光法(Raman spectroscopy)で分析すると、1368cmでピークを示し、これは、sp3 結合を有するダイヤモンドであることを示す。
上述した本発明の好ましい実施の形態は、例示の目的のために開示されたものであり、本発明の属する技術の分野における通常の知識を有する者であれば、本発明の技術的思想を逸脱しない範囲内で、様々な置換、変形、及び変更が可能であり、このような置換、変更などは、特許請求の範囲に属するものである。
Claims (6)
- 六角形のナノ板状構造のダイヤモンドの形成方法において、
多数の孔隙を有するナノ型板を提供するステップと、
電気化学的方法を使用して、前記ナノ型板上に結晶学的に六角形のナノ板状構造のダイヤモンドを形成するステップと、
前記ナノ型板を除去して、前記六角形のナノ板状構造のダイヤモンドを分離するステップと、を含む六角形のナノ板状構造のダイヤモンドの形成方法。 - 前記ナノ型板提供ステップの後に、前記六角形のナノ板状構造のダイヤモンド形成の触媒金属を前記ナノ型板に蒸着するステップをさらに含む請求項1に記載の六角形のナノ板状構造のダイヤモンドの形成方法。
- 前記触媒金属は、Co、Ni、FeまたはPtのうちのいずれか1つである請求項2に記載の六角形のナノ板状構造のダイヤモンドの形成方法。
- 前記ナノ型板は、陽極酸化アルミニウムナノ型板である請求項1に記載の六角形のナノ板状構造のダイヤモンドの形成方法。
- 六角形のナノ板状構造のダイヤモンドの形成方法において、
多数の孔隙を有するナノ型板の下端部に伝導体を蒸着するステップと、
電気化学的方法を使用して、前記ナノ型板上に結晶学的に六角形のナノ板状構造のダイヤモンドを形成するステップと、
前記ナノ型板を除去して、前記六角形のナノ板状構造のダイヤモンドを分離するステップと、を含む六角形のナノ板状構造のダイヤモンドの形成方法。 - 前記伝導体がAuである請求項5に記載の六角形のナノ板状構造のダイヤモンドの形成方法。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060048542A KR100791790B1 (ko) | 2006-05-30 | 2006-05-30 | 육각형의 나노 판상 다이아몬드 형성방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007320845A JP2007320845A (ja) | 2007-12-13 |
| JP4663668B2 true JP4663668B2 (ja) | 2011-04-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007083668A Expired - Fee Related JP4663668B2 (ja) | 2006-05-30 | 2007-03-28 | 六角形のナノ板状構造のダイヤモンドの形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20070295603A1 (ja) |
| EP (1) | EP1867758B1 (ja) |
| JP (1) | JP4663668B2 (ja) |
| KR (1) | KR100791790B1 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7897494B2 (en) * | 2008-06-24 | 2011-03-01 | Imec | Formation of single crystal semiconductor nanowires |
| CN103224215B (zh) * | 2013-04-09 | 2015-09-02 | 中国科学院合肥物质科学研究院 | 六边形纳米片阵列及其制备方法 |
| JP7546264B2 (ja) * | 2020-05-12 | 2024-09-06 | 学校法人立命館 | ダイヤモンドの製造方法 |
| WO2022185098A1 (en) | 2021-03-04 | 2022-09-09 | Crystallyte Co., Ltd. | Electrolytic process for producing a nanocrystalline carbon with 1 d, 2d, or 3d structure and/or a nanocrystalline diamond and/or an amorphous carbon and/or a metal-carbon nanomaterial composite and/or a mixture thereof at ambient conditions |
| WO2024121603A1 (en) | 2022-12-08 | 2024-06-13 | Crystallyte Co., Ltd. | A process for producing a nanocrystalline carbon with 1d, 2d, or 3d structure and/or a nanocrystalline diamond and/or an amorphous carbon and/or a metal-carbon nanomaterial composite and/or a mixture thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0633234B2 (ja) * | 1989-08-02 | 1994-05-02 | 義捷 難波 | ダイヤモンド薄膜の製造方法 |
| JP2633968B2 (ja) * | 1989-12-30 | 1997-07-23 | キヤノン株式会社 | ダイヤモンド被覆材及びその製造法 |
| US6129901A (en) * | 1997-11-18 | 2000-10-10 | Martin Moskovits | Controlled synthesis and metal-filling of aligned carbon nanotubes |
| EP1261862A2 (en) | 2000-02-22 | 2002-12-04 | California Institute of Technology | Development of a gel-free molecular sieve based on self-assembled nano-arrays |
| WO2003043045A2 (en) | 2001-11-13 | 2003-05-22 | Nanosciences Corporation | Photocathode |
| WO2003046265A2 (en) * | 2001-11-26 | 2003-06-05 | Massachusetts Institute Of Technology | Thick porous anodic alumina films and nanowire arrays grown on a solid substrate |
| JP2004202602A (ja) * | 2002-12-24 | 2004-07-22 | Sony Corp | 微小構造体の製造方法、及び型材の製造方法 |
| US7279085B2 (en) * | 2005-07-19 | 2007-10-09 | General Electric Company | Gated nanorod field emitter structures and associated methods of fabrication |
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2006
- 2006-05-30 KR KR1020060048542A patent/KR100791790B1/ko active Active
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2007
- 2007-02-21 EP EP07003576.1A patent/EP1867758B1/en not_active Ceased
- 2007-02-26 US US11/678,828 patent/US20070295603A1/en not_active Abandoned
- 2007-03-28 JP JP2007083668A patent/JP4663668B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20070295603A1 (en) | 2007-12-27 |
| EP1867758A1 (en) | 2007-12-19 |
| KR100791790B1 (ko) | 2008-01-03 |
| EP1867758B1 (en) | 2018-10-31 |
| KR20070114908A (ko) | 2007-12-05 |
| JP2007320845A (ja) | 2007-12-13 |
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