TW201131019A - Graphene and hexagonal boron nitride planes and associated methods - Google Patents

Abstract

Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.

Description

201131019 - VI. Description of Invention: [Priority Information] This application is a priority for the US Patent Application No. 12/71 3, GG4, which was filed on February 25, 2002. U.S. Patent Application No. 12/499,647, filed on July 8, 2009, and US Patent Application No. 61/79, No. 64, and filed on January 19, 2009. For the continuation of the US Patent Application No. 61/145,707, the above patent application is incorporated herein by reference. TECHNICAL FIELD OF THE INVENTION The present invention relates generally to graphene and hexagonal boron nitride flakes and related methods. Accordingly, the present invention relates to the fields of chemistry and materials science. [Prior Art] Graphene is generally defined as a plate having a single atomic thickness of sp2 bonded carbon atoms, which are closely packed into a structure having a benzene ring of a honeycomb crystal lattice. This two-dimensional material exhibits high electron stability and excellent thermal conductivity in the plane of the layered structure. The layered graphene which is stacked in parallel with each other is composed of graphite. Graphene is widely used to describe the characteristics of many carbon-based materials (including graphite, large fullerenes, nanotubes, etc.), for example, carbon nanotubes can be rolled up to form a nanometer-sized cylinder. Furthermore, planar graphene itself has been presumed to be absent in the free state and is unstable for the formation of f-curved structures (e.g., soot, fullerenes, nanotubes, etc.). 201131019 The attempt to combine graphene in electronic devices (such as transistors) and ia-like attempts is often not possible due to problems associated with the manufacture of high quality graphene layers suitable for the size of such devices. success. One technique for producing graphene layers involves tearing graphene away from highly oriented pyrolytic graphite. Using this method, only small moon bodies are produced, which are often too small to be used in electronic applications. SUMMARY OF THE INVENTION Accordingly, the present invention provides graphene and hexagonal boron nitride layers and related methods thereof. 3 In one aspect, a method of forming a graphite layer film is provided. The method comprises: heating a solid substrate under vacuum to a dissolution temperature (S0|ubi|izing temperature), the dissolution temperature being lower than the solid substrate m, dissolving carbon atoms derived from the graphite source in the heated The solid substrate is cooled; and the heated solid substrate is cooled at a sufficient rate such that the dissolved carbon atoms form a graphite layer to at least a surface defect of the solid substrate. The graphite layer formed does not substantially contain lattice defects. In one aspect, the method can include further removing the graphite layer from the solid substrate. Various solid metal substrates can be considered for the fabrication of graphite & in accordance with various aspects of the present invention. In the aspect, examples of the solid metal substrate include, without limitation, chromium (Cr), sb (iron), iron (Fe), chain (Co), nickel (Ni), group (Ta), and (Pd) , Pt, La, Ce, Eu, silver, Ru, Rh, alloys, and combinations thereof. The metal substrate may comprise nickel. In addition, the solid substrate may comprise a substantially less active material to adjust the solubility of the carbon atoms in the solid metal substrate. Consider various large 201131019 materials that are less active, And any such material that is compatible with solid metal substrates and capable of adjusting carbon solubility is considered to be within the scope of the present invention. Examples of such substantially less active materials include, without limitation, gold (Au), silver. (Ag), copper (cu), lead (Pb), tin (Sn) 'zinc (Zn), combinations thereof, and alloys thereof. In one aspect, the substantially less active material may comprise copper. In one aspect, the solid metal substrate comprises a first metal layer and a second metal layer, wherein the first metal layer can be used to dissolve carbon atoms, And the second metal layer can be used to adjust the solubility of the carbon atoms. Thus, in some aspects, the second metal layer comprises a greater proportion of substantially less active material than the first metal layer. Different dissolution temperatures can be used in the manufacture of graphene layers, and this dissolution temperature can be varied depending on the solid metal substrate used and the characteristics of the thin layer of graphite to be produced. In one aspect, the solid metal The substrate is nickel and the dissolution temperature is from about 5 Torr to about 145 Å C. On the other hand, the solid metal substrate is nickel and the dissolution temperature is from about 500 C to about 1 Torr. 〇c. In yet another aspect, the solid metal substrate is nickel' and the dissolution temperature is from about 700 ° C to about 8 Torr. In addition, depending on the material of the solid metal substrate and the desired output The characteristics of the graphite thin layer are used to change the cooling rate of the solid metal substrate. In one aspect, the cooling rate is from about 1 C/sec to 20 C/sec. In another aspect of the invention, a graphite layer is formed. Method can include: The metal substrate is disposed on a supporting substrate and is connected to a graphite carbon source to the solid metal substrate. The method may further comprise: heating under vacuum; the solid metal substrate reaches a dissolution temperature 'the dissolution The temperature is lower than the melting point of the solid metal substrate; and the carbon atoms in the graphite source are dissolved into the heated solid metal substrate of 201131019. The heated solid metal substrate can then be cooled at a sufficient rate to Forming a graphite layer on at least one surface of the solid metal substrate from the dissolved carbon atoms, wherein the graphite layer has substantially no lattice defects. In one aspect, connecting the graphite carbon source to the solid metal substrate The step includes disposing the source of graphitic carbon between the support substrate and the solid metal substrate. In another aspect, the step of joining the graphite carbon source to the solid metal substrate comprises passing the graphite carbon to a surface of the solid metal substrate and opposite the support substrate. The invention also provides a graphene layer produced in accordance with the method of the invention. In this example, the graphene layer can be fabricated in a predetermined size and shape. These graphene layers can be applied to various devices. The foregoing device may include, without limitation, a molecular sensor, a light emitting diode, a liquid crystal display, a solar panel, a force sensor, a surface acoustic wave device (SAWfi|te "), a resonator, a transistor, a capacitor .; transparent electrodes, ultraviolet lasers (uvias are now only purely widely available, and therefore, in the following detailed description, can be further understood, and in the field The contribution of the present invention may be better understood, and other features of the present invention will be apparent from the detailed description and the accompanying drawings and applications. The following is a description of the invention and a definition of a patent suffix. The singular type of the word used in the singular name appears as "a = singular ^ in the context of the singular ^", unless otherwise singular The 20111019 antecedent also includes plural objects, such as "one particle" includes one or more of such particles; "the material" includes one or more of such materials. (degree of graphjtizati〇n)" refers to the proportion of graphite, which is theoretically separated by 3.354 angstroms (grabbing 9 with a "graphene plane", therefore, the degree of graphitization is 100%) The graphite has a graphite plane spacing of the bottom surface (9) just 2)) a hexagonal network of carbon atoms of 3 354 angstroms. A higher degree of graphitization means a smaller graphite • plane spacing. The degree of graphitization (G) can be utilized Calculated by Equation 1. G = (3.440 - d(〇〇〇2))/(3.440 - 3.354) (1) Conversely, d(〇0〇2) can be calculated from G using Equation 2. d(0002) = 3.354 + 0.086(1-G) (2) According to Equation 1, 3.440 angstroms is amorphous carbon (Lc = 50Aw surface spacing ' and 3.354 angstroms is pure graphite (lc = ι〇0〇Α) interval, pure graphite is The graphitizable carbon can be sintered at 3000 for an extended period of time (eg, 12 hours). Higher degrees of graphitization correspond to larger crystal sizes, which are by the size of the bottom surface _ (La) and the stacked layers. (Lc) is characterized by the size. It should be noted that the size parameter is inversely proportional to the spacing of the bottom surface. A "highly graphitized" is based on the material used but Refers to the degree of graphitization equal to or greater than about 〇 8. In some embodiments, a high degree of graphitization refers to a degree of graphitization greater than about 〇 _ 85. The term "graphite film" as used herein is Refers to a plurality of stacked graphene layers. As used herein, "substantia||y less-"eactive" means that it does not significantly react with the graphene material and chemical bonds. a mixture of elements or elements. Examples of substantially less active elements may include, but are not limited to, gold (Au), silver (Ag), copper (Cu), lead (Pb), tin (Sn), 201131019 zinc (Zn), and mixtures thereof. As used herein, "substantially" refers to the complete, near-complete extent or extent of a step, characteristic, property, state, structure, item, or result. For example, a "substantially" coated system means that the object is completely covered or nearly completely coated. Deviations from absolute full allowable deviations can be determined in different situations depending on the specific context. However, it is usually nearly as complete as the absolute or complete payment has the same overall result. The use of "substantially" as used in the negative sense is equally applicable to indicate complete or near complete lack of steps, characteristics, nature, state, structure, project or outcome. For example, a "substantia丨丨yfree〇f" particle composition can be completely devoid of particles, or very nearly completely devoid of particles, and its effect will be as completely lacking particles. In other words, a "substantially no" component or element composition actually contains such a substance as long as it has no measurable effect on the characteristics of interest. The "about" used in the text is provided by the "higher (3丨川丨6 31)(^6)" or "lower (3 old^1:) 8 yells" than the endpoint. The value provides the elasticity of the endpoint of the range of values. The plurality of articles 'structural elements, constituent elements and/or materials used in the text may appear in the general common list based on convenience, however these enumerations may be interpreted as [components alone or in (four) are defined, therefore, The single-members of the recited towel are not to be considered as any other component that is substantially equivalent based on the same enumeration in the ordinary enumeration without the opposite representation. Concentrations, quantities, and other numerical data may be presented or expressed in a range of '. It is important to understand that the use of this range of forms is based on convenience and simplicity, and therefore should be fairly flexible when interpreted. 201131019 Only Included in the range is explicitly shown as a limiting value, and also includes all individual values and sub-ranges in the range of values, as each value and sub-range are explicitly recited. For example, a range of values "about 1 micrometer to about 5 micrometers" should be interpreted to include not only about 1 to about 5' that are explicitly recited, but also every value and sub-range within the specified range, because & 'contains Each of the values in this range of values, such as 2, 3, and 4, or sub-ranges such as ί _3, 2-4, and 3-5, and the individual 1, 2, 3, 4, and 5. This same principle applies to the range in which only one value is recited. Again, such description should apply to either the range of the range or the features described. The present invention relates to novel graphene and hexagonal boron nitride layers and related methods; further, it relates to a method of fabricating a material comprising a substance mainly composed of sp2 bonds and a material layer, and Materials. It is known that the graphene layer can be made to have a size sufficient for many electronic applications, and the graphene layer is a flat plate having sp2 bonded carbon and having a single atom thickness, and as shown in Fig. 1, it is closely packed into The structure of a benzene ring having a honeycomb crystal lattice. The carbon-carbon bond length in graphene is about 145 angstroms (A) shorter than the length of the diamond of 1.54A. Graphite is a basic structure of other graphite materials, 7L, including graphite, carbon nanotubes, fullerenes and the like. It is noted that the term "graphene" in the aspect of the invention includes graphene relating to the atomic layer and graphene stacked in a plurality of layers. It should be noted that the term "graphite layer" can be used to describe a plurality of layers of graphene stacked. ^Excellent graphene is composed only of hexagonal crystals, and any graphite or x-angle or heptagonal crystals will form defects, which will change the flatness of the 201131019 graphite thin layer. For example, a single-five (four) crystal would cause the flat plate to bend (earn P) into a rounded vertebra, and when 12 pentagonal Ws would properly produce a flat fuller. Similarly, the 'single-seven-corner crystal will bend the flat plate f into a saddle-shaped (saddle_shape) e-graphite plate (4) (4) toward the drop stability and thermal conductivity, and pg μμ, 丨+人 and thus not conducive to Use in applications where these properties are important. f As described above, it has been difficult to obtain a high quality graphite thin layer (or graphite layer) that has been proven to be large enough for many electronic or other applications. The use of a molten solvent or a solid metal-based material can produce this high-quality graphite thin layer. In the case of a molten solvent, these materials form a solvent to act as a catalyst to facilitate sintering of the plurality of graphene sheets and / or formed. For example, in one aspect, the present invention provides a method of forming a thin layer of graphite, the method comprising: mixing a carbon source with a horizontally oriented smelting solvent; precipitating a carbon source from the (iv) solvent to form a solvent throughout the (iv) solvent a graphite layer; and dividing the graphite layer into a plurality of graphene layers. In some aspects, the heating and killing of the carbon source is accomplished in a vacuum to reduce contamination. Many methods of mixing carbon sources and melting solvents can be considered. In some cases, the carbon source is mixed with a molten solvent that has been in a molten state; in other cases, the carbon source is bonded to a solvent material that is then in a molten state. For example, in one aspect, the mixed carbon source and the molten solvent include a solvent layer that provides the carbon source to the curing, and the cured solvent layer is heated in a vacuum environment to melt the cured solvent layer into a -solvent solvent. The molten solvent and the carbon atoms of the carbon source form a eutectic liquid, which is then maintained in a state of the eutectic liquid, and the graphite layer is formed substantially throughout the molten solvent. On the other hand, decane is pyrolyzed. 201131019 and graphite is formed on the nickel sputtered on the alumina substrate, after which the nickel is heated to liquefy 'the carbon atoms in the graphite are rearranged. And graphene is formed. In one aspect, 'graphene can be formed by carbon being eluted from a supersaturated solution of carbon in a molten solvent, in which case the solvent liquid has a supersaturated carbon material, and the liquid is cooled to The carbon begins to dissolve into kish graphite, which will float on the top surface of the molten solvent and will mens each other to form high-quality graphene, which can apply vibration to the molten solvent to help Repair of graphite sheets, this process enables the carbon atoms to diffuse effectively in supersaturated molten solvents, so they can be easily deposited on the edge of the graphite sheet "islands". A carbon atom having a hexagonal bond arrangement is very stable and therefore does not readily dissolve in the molten solvent. On the other hand, the edge of the structure includes a dangling bond that reacts with a solute atom such as a nickel atom. ) 'Therefore, the dissolution and precipitation reactions at the edges are reversible, allowing the solute atoms to recirculate by bonding and dissolution until they are bonded to the carbon atoms and grow around the edges of the sheet if the temperature can be controlled by φ This procedure can be improved by approaching equilibrium or if the temperature can circulate to remove unstable carbon atoms and solute atoms that favor hexagonal bonding carbon. In some aspects, an etchant can be used to remove carbon atoms, and in some cases to remove larger carbons that do not conform to the graphite germanium lattice: such etchants include but are not limited to hydrogen ( H), oxygen (〇), nitrogen (N), fluorine (f), gas (Cl), and mixtures thereof. In addition to this, a courtyard can be applied throughout the entire surface as a supplemental carbon source, and it is helpful to repair the graphite thin sheets to form a substantially continuous layered structure to v. In one aspect, the etchant and decane can be cycled over time to repair the graphite flakes to form an at least substantially continuous layered structure. Furthermore, by controlling the floating on the surface during repair 11 201131019 The amount of graphene can promote the quality of the graphene layer, too much graphene will produce irreparable gaps in the formed layer structure, and too little graphite Alkene can significantly reduce the yield. More particularly, as shown in Figure 2, a thin layer of highly graphitized graphite 12 can be spread throughout the molten solvent layer 14 that is cured in the mold 16, which includes natural graphite. In many cases, it may be beneficial to use a graphite material as the mold, however, other materials may be used as well, and are well known to those of ordinary skill in the art. Additionally, in the aspect, the thin layer of highly graphitized graphite may have a thickness of less than about #40 nm; in another aspect, the thin layer may have a thickness of less than about 2 〇 (10). It is also important to note that better results can be obtained when highly graphitized graphite is highly purified, for example, impurities in various graphites, oxygen and nitrogen) can be utilized, for example, for chlorination treatment at elevated temperatures. Was removed. Further, examples of non-limiting highly graphitized graphite include pyr〇丨jtic graphite, sputtered graphite, natural graphite (natura 丨 graph Ue) and the like. In one aspect, the degree of graphitization of the graphite is greater than about 8 〇; in another aspect, the degree of graphitization of the graphite is greater than about 9 〇; in yet another aspect, the degree of graphitization of the graphite The system is greater than 〇. 9 5. After the graphite is dispersed in the solidified solvent layer, the mold assembly can be heated in a vacuum furnace to melt the solvent material to form a molten solvent. When melted, the solvent and the graphite form a eutectic liquid, for example, if the solvent is a nickel, nickel-carbon eutectic liquid is formed along the boundary between the surface of the molten solvent and the highly graphitized graphite; the molten solvent then assists the graphene sheet from the highly graphitized graphite Patched together to become continuous graphite

S 12 201131019 Olefin layer. The molten solvent is composed of any material capable of catalyzing the formation of graphene; for example, in one aspect, the molten solvent may include chromium (c"), manganese (Mn), iron (Fe), and (Co). , nickel (Ni), group (Ta), p (pd), ep (p), lanthanum (La), cerium (Ce), cerium (Eu) and related alloys and mixtures. In a particular aspect, the melting The solvent may comprise nickel. In another particular aspect, the molten solvent may consist essentially of nickel. In yet another particular aspect, the molten solvent may consist of or consist essentially of nickel or a nickel alloy. .In a

In a particular aspect, the molten solvent comprises iron, nickel, and cobalt. In one aspect, the molten solvent is initially in contact with the graphite material as a powdered material; in another aspect, the curing solvent can be a hard surface at the point where the graphite is to be deposited 'the graphite is in various ways Applied to such a table, including dry powder method (four) powders), mud method (S | ur "ies", splashing clock, etc. In some cases, the formed graphene layer will be due to solvent (such as with carbon recorded) The activity is impaired, for example, the carbide bond will produce a 'the strength of the bond between the (iv) solvent and the graphite material. The strength of this bond will cause the graphene to f-buck when removed from the surface of the molten solvent (buck| E々 is torn, and therefore, in some aspects, a substantially less active compound or material can be included in the molten solvent to reduce the activity of the molten solvent having graphite, and thus, the activity of the molten solvent is reduced. The amount of carbide formed along the interface can be reduced, thereby helping to regain the graphene with minimal tear damage. Any activity that reduces the activity of the molten solvent and allows graphene to form on the molten solvent Materials are considered to be within the scope of the invention. In one aspect, the substantially less active compound may comprise a combination or alloy of elements such as gold, silver, copper, aluminum, zinc, zinc, and combinations thereof. In one aspect, the substantially less active compound is copper. In yet another particular embodiment, nickel-copper 13 201131019 gold can be used for the catalyst surface, for which the empty 3d is obsessed Therefore, the smelting of nickel can dissolve graphite, and the smelting copper cannot be dissolved due to its 3d orbital. Nickel-copper is a kind of sleek point that can be adjusted between the melting point of copper _.0 and the melting point of 1455»c. The alloy is therefore sufficient to optimize the activity between the liquid alloy and the graphite flakes. This activity is not strong enough to form carbides, but is sufficient to move the carbon atoms in the graphene to nudge (nudge a carbon atom to an equilibrium position, that is, a position where energy is the smallest. In another aspect, a steel alloy can be used, which is because the copper and manganese are completely miscible (misc|b丨e), and the melting point is lowered. It is only when the manganese content is 34·5 wt% 873 ° C. Therefore, the production of graphene allows graphene plates to grow in accordance with the unique mapping between graphene and liquid metal, and reduces the position of defects that are unstable due to catalyst reaction. Heavy smelting liquid (density close to 9 g/cc) can be used as fragile graphene (density is 9/called iron plane), in which the hydrostatic balance can be floated by Maintaining a large area of the graphite plate, in order to help the movement of defective carbon atoms, can provide ultrasonic vibration to help the sintering process and grain coarsening growth; then by allowing significant grains to not form or deform (buck|e) The method of forming graphene cools the molten liquid, which can be achieved by maintaining a temperature gradient, and avoids convection and very slow top cooling. It is not intended to be combined with any particular theory, but it is believed that the solvent material can catalyze the formation of the graphene layer because the size of the solvent atoms is much larger than the carbon atom size, and the empty d orbital of the catalyst material can be nudged. j or direct the carbon atoms into the correct position of the carbon to form a graphene network, this interaction is not strong enough to form carbides, but strong enough to move the carbon atoms 201131019, so the solvent liquid system is defined as a template of carbon atoms to form a hexagonal graphene network structure. When these network structures are formed, if there are any grain boundaries, many graphene layers are stacked to form some grain boundaries. It should be understood that many graphene stacks are produced. The farther the graphene layer is from the catalyst surface, the easier it is to start to produce grain boundaries. For example, liquid nickel can arrange any other atoms in the graphene layer when graphene is formed, and the flow properties of the liquid template will wrap around & "〇 und" pushes the graphite atoms to repair the interface between the graphite sheets. There are still many self-organizing machines for automatically repairing the graphite patch patches. The fine details must have two different carbon atom regions on the graphene. Although the individual graphene plates have a hexagonal pattern, the multiple graphite layers will be slightly bent (buck|ed) and have an alpha region and Beta g. The graphene plate will move and align as long as other atoms (Alpha region) are aligned with the entire plate, and most of the other atoms are located in the center of the adjacent hexagon. The gas force is bonded, so the sloshing electrons are too weak to interact with the nickel atoms. Only the carbon atoms in the beta zone can be attracted by the 3d orbital vacancies of nickel, which means that the graphite patch must be repaired. Towards the relevant nickel atom, in essence, it will push the graphite sheet over the nickel surface. The grain boundary of the graphene layer can be reduced by the catalytic effect of the above-mentioned molten solvent, thus forming a large area. , a high-quality graphene layer, and any grain boundary on the right has very few grain boundaries. In some aspects, the graphene can be substantially lacking grain boundaries or completely The grain boundary formed. The graphene layer formed is often substantially the same size as the surface on which it is formed. The accurate horizontal orientation of the molten catalyst surface thus contributes to the formation of a graphene layer having a high degree of flatness. It is worth noting that this procedure can be used to shape a graphene layer of a single atomic thickness of 15 201131019, or a graphene layer or a flat plate with a plurality of individual graphene layers stacked in parallel. In the latter case, the stacking of graphene layers Due to the fact that the plurality of graphene layers have substantially no structural grain boundaries, they have erbium electron mobility and thermal conductivity. In some cases, a thin layer of the graphite is formed and can be separated into a plurality of graphite thin layers. The extent to which the temperature can be increased is determined by the nature of the solvent and the desired properties of the graphene product. However, in one aspect, the mold assembly is heated to greater than about 1 Torr. C; in another aspect, the mold assembly is heated to greater than about 130 (TC; in yet another aspect, the mold assembly is heated to greater than about 150 CTC. Similarly, graphene can be in various pressures It is manufactured, for example, in one aspect, the pressure in the vacuum furnace is less than about 5 Torr; in another aspect, the pressure in the 'true line is from about ι 〇 3 to about 1 (Γ 6 Torr). Cooling the mold assembly after the formation of the graphite layer to aid in the removal of the graphite thin product. In some aspects 'cooling the surface evenly to maintain the flatness of the surface is helpful n-face, this cooling can The stone (four) layer can be removed from the surface by conducting the ruthenium out of the surface of the solvent and maintaining the heat above the surface of the solvent at a high temperature, and the graphite can be removed in a single layer or a plurality of layers. The surface is torn off, and this tearing action can be produced due to the interval of 3_35 angstroms (层) between the layered structures. The graphene layer can be continuously torn and can be wound according to the size of the molten surface. In a reel-like device. 'Figures 3 to 6 show that it is here. A photomicrograph of graphene. Figure 3 is not formed on a graphite layer having a striated path thereon, as described, the stone layer can be separated from the graphite layer. As shown in Fig. 4, the enlarged enemy 201131019 graphite layer is continuous. Figure 5 shows the flexibility of the graphite layer. Figure 6 shows the density distribution of the microbes (10)cr〇be on the exposed graphite layer. The microorganisms on the graphene layer can be heated to about 5 It is removed. This is a reversible reaction, so these graphite thin layers can act as a sensor for microorganisms.

As described above, in some cases, the graphene layer can be separated from the thick graphite layer formed on the surface of the solvent. Various methods of separating the graphene layers are possible, and are included in the scope of the present invention. In one aspect, the graphite layer can be heated in sulfuric acid. 'The insertion of sulfur atoms can separate the graphene layer into a plurality of graphene layers'. After each graphite layer can be purified (for example, hydrogen or dentate environment at high temperature) Medium) and remove impurities and/or defects. In another aspect of the invention, it is possible to use a gasification process to eliminate defects, since the defects and grain boundaries in the graphite thinning are not flawed, the carbon atom system located at the terminal position tends to be dissolved, and in the graphite thin mesh The carbon atoms in the structure are relatively stable. The heated oxygen or vapor spreads over the surface of the graphene layer. It can cause the unstable carbon atoms related to the grain boundary to be vaporized into carbon monoxide (c〇) or carbon dioxide (co2) by controlling c〇/c. 〇 2 ratio (partial pressure), carbon atoms can be removed from the defect position m is grown in various ways to the graphite wafer body. In addition to oxygen, 'dental gases (such as fluorine and gas) can also be used. The graphene layer can be additionally grown by thermal decomposition of a carbon-containing gas (for example, smoldering, yoke, propylene, ding, etc.), which can be used for growing high-quality graphite # because the solubility of stone anaesthesia is controlled Avoid supersaturation of carbon and fast and uncontrolled growth. Therefore, it is possible to add a carbonaceous gas (for example, C0/C02) of the 9 compound 'J_-oxygen carbon and: the carbon oxide partition can be different to control the concentration of carbon in the molten molten carbon, thereby causing the produced graphite 17 201131019 Defects in the olefin layer are minimized. - A solid metal substrate can also be used to make the graphene layer. In the aspect of the invention, a method of forming a graphite layer (or a thin layer of graphite) comprises: heating a solid substrate under vacuum to a solubilization temperature, the dissolution temperature being lower than a melting point of the solid metal substrate; and dissolving carbon atoms from a graphite source in the heated solid metal substrate. By heating the solid metal substrate, the solubility of the carbon source of the graphite source in the solid metal substrate can be increased, whereby carbon atoms can be moved into the metal. The method can further comprise cooling the heated solid metal substrate at a sufficient rate such that the dissolved carbon atoms form a graphite layer onto any surface of the solid metal substrate. The foregoing surface may comprise a surface adjacent to the graphite source and/or a surface opposite the graphite source. After forming the graphite layer, the graphite layer can be removed from the solid metal substrate. In some aspects, vacuum conditions can be employed to heat and/or cool the solid metal substrate to avoid oxidation upon formation of graphene. Various solid metal substrates can be considered, and any such solid metal substrate capable of dissolving carbon atoms is considered to be within the scope of the present invention. In one aspect, the solid metal substrate comprises a component selected from the group consisting of chromium (Cr), strontium (Mn), iron (Fe), cobalt (Co), and nickel (Ni). , New (Ta), Put (Pd), Start (Pt), 镧 (La), 钸 (Ce), 铕 (Eu), 鈒 (丨 "), 钌 (Ru), 铑 (Rh), related alloys And one of its combinations. In a particular aspect, the solid metal substrate comprises nickel. In some aspects, a substantially less active material can be used to adjust the solubility of carbon atoms in the solid metal substrate. Examples of such substantially less active materials include, without limitation, gold (Au), silver (Ag), copper ((:...lead (pb), 18 201131019 tin (Sn), zinc (Zn), combinations thereof, and Alloys thereof, as previously described herein. Substantially less active materials can be bonded to the solid metal substrate in a variety of different ways to adjust the solubility of the carbon atoms. In one aspect, for example, the substantially less active material can be Mixed in a solid metal substrate. The foregoing examples may include mixtures and alloys, etc. In another aspect, the The metal substrate can be formed as a multilayer solid metal substrate. For example, in one aspect, the solid metal substrate comprises a first metal layer and a second metal layer, wherein the first metal layer Is a solid metal substrate material for dissolving carbon atoms, and the second metal layer is a substantially less active material for adjusting the solubility of carbon atoms. In a specific example, a nickel layer may be bonded to On a copper layer, when the composite is heated, carbon atoms in an adjacent graphite source can be dissolved into the nickel layer. Since the solubility of carbon atoms in the copper layer is substantially lower, the carbon atoms will Mainly concentrated in the nickel layer. One of the benefits of using a solid metal substrate compared to a molten solvent is that the stability of the solid metal substrate is superior to that of a molten liquid. In the example of melting a φ solvent A molten metal is formed on the surface of the liquid metal by a metal material. When the metal material is heated and cooled to solidify, the surface shape of the metal material is changed due to at least a part of the surface tension change. The surface shape change may cause the graphene layer formed on the surface of the metal material to be defective under certain conditions by dissolving the carbon atoms in a solid metal substrate heated to a temperature and the temperature is lower than The melting point of the substrate, the shape and surface configuration of the growth surface are not substantially changed, and in some cases, the graphite thin layer may have fewer defects. Therefore, the temperature at which the carbon atom is dissolved (dissolution temperature) It may vary depending on the material used for the solid metal substrate. Any temperature that maintains the surface shape of the solid gold 19 201131019 to dissolve the carbon atoms should be considered to be included in the scope of the present invention. In aspect, the solid metal substrate is nickel and the dissolution temperature is from about 500 ° C to about 1450. C. In another aspect, the solid metal substrate is nickel and the dissolution temperature is from about 5 〇〇 ec to about 1000 C. In yet another aspect, the solid metal substrate is nickel and the dissolution temperature is from about 700 ° C to about 800. C β can also change the cooling rate of the solid metal substrate according to the solid metal substrate and the thinness of the formed graphite. It should be noted that the heated solid metal substrate can be actively or passively cooled to achieve specific cooling. rate. A fast cooling rate with a slower cooling rate will pull carbon atoms out of the metal substrate faster, which may result in graphene materials with different properties or different lattice qualities. In some aspects, the solid metal substrate can be placed on a support substrate when the graphene layer is formed. The solid metal substrate can be bonded to the support substrate or it can only be disposed on the support substrate. In addition to providing support, the support substrate can also assist in regulating the heat, particularly the rate of cooling. The increased quality of the support substrate, possibly in conjunction with the use of thermal conditioning materials, allows the solid metal substrate to be more uniformly cooled in space and time. The graphite carbon source can be incorporated at various locations on the solid metal substrate. In one aspect, for example, the graphite carbon source can be disposed between the support substrate and the solid metal substrate. In this example, graphene may be formed on the solid metal surface and between the graphite carbon source and the solid metal surface; it may be formed on the solid metal substrate by moving through the solid metal substrate and relatively Graphite carbon source; or it can be formed on these different surfaces simultaneously. In another aspect, the graphite carbon source can be disposed on the surface of the 201131019 of the solid metal substrate and opposite the support substrate. In this example, graphene may be formed on the solid metal substrate and between the graphite carbon source and the solid metal substrate; it may be formed by moving through the solid metal substrate in the solid metal-based material. Upper and opposite graphite carbon sources, and the solid metal substrate is not bonded to the baffle substrate' or it can be formed on these different surfaces simultaneously. In addition to graphite and highly graphitized graphite, diamond materials can also be used as a carbon source to form a graphene layer for use in molten solvents and solid metal substrates, and the diamond can be used in a lower than solid metal substrate. The melting point of the melting point is dissolved. The diamond materials used may include natural diamonds, synthetic diamonds, single crystal diamonds, polycrystalline diamonds, diam〇nd丨ike carbon (DLC), amorph〇us djam〇nd and others. . One of the benefits of using this diamond material is the ability to produce a graphene layer of the rhombohedral sequence (ABCABC...) rather than a sequence of traditional ABABAB.... Thus, on one hand, a diamond 6 is formed. The method of planar graphite layer can comprise: mixing a source of diamond and a horizontally oriented melt-blending mixture and depositing a source of diamond in the molten solvent to form a rhombohedral graphite layer throughout the molten solvent. In some aspects of the invention, the graphene layer can be doped with various dopants, the dopant can be used to alter the physical properties of the graphene layer, and/or it can be used to alter the graphene in the graphene layer stack The physical interaction between the layers allows for the doping of the graphite layer to be formed by adding dopants to the molten layer or by forming debris in the layered structure after formation of the graphite layer. A P-type semiconductor can be formed, for example, by doping boron.

The species can be used to dope into the graphene layer, and specific non-limiting examples include butterflies, bumps, U φ gas, and combinations thereof. Doping can also be used to alter the electron mobility of the graphite layer to form a circuit in a layered structure that is capable of distributing circuit patterns in a graphene layer. Further, when the graphene layer has a high electron mobility, the conductivity between the graphene layers in the stack is limited. The electron mobility in the layered structure of the Temman can be increased by doping metal atoms or other conductive materials. The invention further provides a thin layer of graphite produced in accordance with the steps described herein, the layered structure may comprise a single graphene layer or a stack of complex graphene layers; further, as described above, in aspects of the invention The graphene layer has a high quality material, and if there are any grain boundaries, there are few grain boundaries, and the graphene layer can be made according to various aspects described herein due to the synthesis of the stone earth material. The entire solvent or catalyst surface is present, so it has a larger size than the possible aspects of the prior art, but it should be understood that the graphite layer of any size produced in accordance with the present invention is considered to be within the scope of the present invention, the present invention The method is particularly compatible with a large area of graphene layer, the size of which needs to vary according to the size of the catalyst surface, however in a particular aspect, the size of the graphite layer can be greater than about 1.0 mm2; In one aspect, the graphite layer has a size of from about 1.0 mm 2 to about 1 mm 2 ; in yet another aspect, the graphite layer has a size of from about 10 mm 2 to about 1 mm 2 ; in one aspect, the graphite layer Size system More than about 1 〇〇 mm 2 ; in another aspect, the size of the graphite layer is greater than about 1 〇 cm 2 ; more in one aspect, the size of the graphite layer is greater than about 100 cm 2 ; and in one aspect, the size of the graphite layer The system is greater than about j m2. The physical properties of the graphite layer make it a material that facilitates bonding to a variety of devices. Many devices and uses can be considered, and the following examples should not be considered as limiting. For example, in one aspect, the high electron mobility of graphene makes it an element of an integrated circuit; on the other hand, graphene can be used as a 201131019 to detect single or complex molecules (including gases). The two-dimensional (2D) structure of the graphite layer effectively exposes the entire graphene material to the surrounding environment', thus making it an effective material for detecting molecules. This molecular detection can indirectly measure 'when gas molecules Absorbed on the surface of graphene, the position of absorption will show a local transformation in electrical resistance. Graphite thinning is an advantageous material for this speculation, because its high conductivity is extremely low noise, and the change in resistance can be detected. In another aspect, the graphite layer can be used as a surface acoustic wave filter (SAW filter), in which case the voltage signal is transmitted due to the resonance of the graphene material. In yet another aspect, graphene can be used as a pressure sensor. In another aspect, the graphene layer can be used as a transparent electrode for applications in light emitting diodes (LEDs), liquid crystal displays (LCDs), and solar panels. In addition to this, graphene can be wound together with an insulating material (for example, My丨ar@) film to manufacture a capacitor. Furthermore, graphene can be co-wound with insulated hexagonal boron nitride to produce an excellent capacitor material. Moreover, graphene is deposited on a semiconductor material (e.g., germanium) and etched to produce an electrical interconnect of the electronic device. The invention further provides a hexagonal boron nitride layer and related methods. For example, in one aspect, a method of forming a hexagonal boron nitride layer is provided, the method comprising the steps of mixing a boron nitride source and a horizontally oriented molten solvent, and wherein the boron nitride source is formed from the molten solvent to form a In the aspect of the hexagonal boron nitride layer of the molten solvent, mixing the nitriding source and the molten solvent includes providing the boron nitride source to a solidified solvent layer 'and heating the solidified solvent layer under a nitrogen atmosphere to melt The cured solvent layer & is melted and dissolved, and the molten solvent and boron from the boron nitride source form a eutectic liquid with the nitrogen atom. In another aspect, precipitating the boron nitride source from the molten solvent comprises maintaining a state in which the molten solvent and the boron nitride source are in a eutectic liquid, and forming a hexagonal nitride shed layer substantially throughout The entire molten solvent. More specifically, as shown in FIG. 7, a thin layer of boron nitride source (e.g., sheet 32) can be dispersed on the molten solvent layer 34 solidified in the mold 36. In many cases, it is advantageous to use a nitriding material as a mold, but other materials are equally useful and well known to those of ordinary skill in the art. Additionally, in one aspect, the boron nitride source layer can have a thickness of less than about 40 nm; in another aspect, the boron nitride source layer can have a thickness of less than about 20 nm. After dispersing boron nitride in the solidified molten solvent layer, the mold assembly is heated in a boiler having a nitrogen atmosphere to melt the solvent layer. The nitrogen atmosphere is used to prevent nitrogen vapor formed from boron nitride. Further, the solubility of nitrogen in the molten metal is much lower than that of boron, and the solubility of nitrogen can be increased by adding a nitrogen absorbent (for example, nickel, cobalt, iron, tungsten). By increasing the solubility of nitrogen, the growth rate of the layered structure can be increased and the density of defects can be reduced by increasing the solubility of nitrogen. The catalyst surface thus helps to repair the hexagonal boron nitride flakes from the boron nitride source to continuous hexagonal boron nitride. The molten catalyst is made of any material capable of catalyzing the formation of a continuous hexagonal boron nitride layer. For example, in one aspect, the molten catalyst comprises (Li), sodium (Na), potassium (K), i (Rb), bismuth (Be), magnesium (Mg), calcium (Ca), strontium (Sr) ), barium (Ba), lithium hydride (LiH), lithium nitride (ϋ3Ν), sodium nitride (NhN), magnesium nitride (Mg"2), calcium nitride (Canj and its alloys and compositions; In a particular aspect, the catalyst surface comprises lithium nitride; in another particular aspect, the catalyst surface consists essentially of lithium nitride. In yet another particular aspect, 'hydrogenated lithium can be used as a molten solvent. 201131019 Any grain boundary in the hexagonal boron nitride layer can be reduced by the catalytic effect of the molten solvent, so that a large-area, high-quality hexagonal boron nitride layer is formed, and if any grain boundary exists, there is little grain boundary. The hexagonal nitride layer formed is substantially the same size as the catalyst solvent it is formed thereon. The flat horizontal orientation of the molten solvent contributes to the formation of a highly planarized hexagonal boron nitride layer. This procedure can be used to form a hexagonal boron nitride layer of a single atomic thickness, or a hexagonal boron nitride layer. Or a flat plate in which a plurality of individual hexagonal boron nitride layers are stacked in parallel. In the latter case, the stack of hexagonal boron nitride layers has high electron mobility and high thermal conductivity due to a plurality of hexagonal boron nitride layers. Having a substantially unstructured grain boundary. The temperature at which the mold assembly can be heated can vary depending on the nature of the molten solvent and the desired properties of the hexagonal boron nitride product. However, in one aspect, the mold assembly can be Heating to greater than about 1 〇 00. c; in another aspect, the mold assembly can be heated to greater than about 3 〇〇 c. In yet another aspect, the mold assembly can be heated to greater than about 15 〇 (rc. Similarly, hexagonal boron nitride is produced in various pressures'. For example, in one aspect, the gas atmosphere in the pin furnace is less than about 1 atm. After the hexagonal boron nitride layer is formed, The mold assembly can be cooled to facilitate removal of the hexagonal nitriding butterfly product. In some aspects it is advantageous to cool the surface to maintain the flatness of the solvent surface. In one aspect, the cooling energy By melting solvent The heat is controlled and maintained above the solvent of the molten solvent; the degree of the rut between the ruts and the slabs is... When the solvent is cooled, the hexagonal nitriding can be torn off from the surface, and the hexagonal nitriding butterfly is peeled off to become a single-layer structure or A plurality of layered structures. The hexagonal nitride butterfly can be continuously torn off and can be wound around a reel-like device depending on the size of the catalyst surface. 25 201131019 In some aspects of the invention, the hexagonal boron nitride layer can be doped Various dopants, dopants can be used to alter the physical properties of the hexagonal boron nitride layer, and/or it can be used to alter the physical interaction in the hexagonal boron nitride layer of the hexagonal boron nitride layer stack. The doping can be generated by adding a dopant to the mold assembly when the hexagonal boron nitride layer is formed, or by depositing a dopant in the layered structure after the hexagonal boron nitride layer is formed. produce. Various dopants can be used to dope in the hexagonal boron nitride layer, and specific non-limiting examples include bismuth, magnesium, and combinations thereof. The cerium is doped with hexagonal boron nitride to form an N-type semiconductor material. The present invention also provides hexagonal boron nitride produced in accordance with the steps described herein, the layered structure comprising a single hexagonal boron nitride layer or a stack of complex hexagonal boron nitride layers. Further, as described above, the hexagonal boron nitride layers according to aspects of the present invention are high quality materials having few grain boundaries if any grain boundaries are present. In addition, the hexagonal boron nitride layer can be made in accordance with various aspects described herein, and since the synthesis of the hexagonal boron nitride material extends over the entire catalyst surface, it has a larger size than previously possible. However, it should be understood that the hexagonal boron nitride layer of any size produced in accordance with the present invention is considered to be in the scope of the present invention, and the method of the present invention is particularly compatible with a large area & hexagonal boron nitride layer, such a layer The size of the structure needs to be different depending on the size of the catalyst surface, however, in one aspect, the size of the hexagonal boron nitride layer can be greater than about 10 2 · mm; in another aspect, the size of the hexagonal boron nitride layer is From about 1 〇 〇 2 to about 10 mm 2; in yet another aspect, the hexagonal boron nitride layer has a size of from about 10 mm to about 1 〇〇 mm 2 ; in one aspect, the size of the hexagonal boron nitride layer The system is greater than about 100 mm2; in another aspect, the size of the hexagonal boron nitride layer is greater than about 10 cm2; and in one aspect, the size of the hexagonal boron nitride layer is £26.201131019 is greater than about 100 cm2; In one aspect, the hexagonal boron nitride layer has a size greater than about 1 m2. The physical properties of the hexagonal boron nitride layer make it a material that facilitates bonding to various devices. Many devices and uses can be considered, and the following examples should not be considered as limiting. For example, in one aspect, hexagonal boron nitride has a monthly b-span (5.97 eV) and is capable of emitting a deep ultraviolet (about 215 nm). Therefore, hexagonal boron nitride can be used as an LED or a solar cell. For example, these materials have the shortest bond length (1 · 42 A), so they are harder than two-dimensional diamonds, so they have a very large energy gap and can emit far ultraviolet rays. This is for nano lithography. And UV excitation fluorescence is very useful to form white LEDs. A P-N interface can be formed to fabricate a transistor that can form a graphene interconnect circuit in-situ. In still another embodiment, graphene or single boron nitride also has high sound velocity and thermal conductivity, and therefore, it can be used for supersonic frequency surface acoustic wave filters, supersonic generators, and heat sinks. Due to the hexagonal symmetry, these materials also have piezoelectric properties (piez〇e丨ectrjc). In another embodiment, a graphene or boron nitride layer can be used as an inductor for chemisorbed gas, a precision electrode for analyzing the degree of ρβ of ions (such as lead) by electrolysis in an aqueous solution. ), a transparent electrode with hydrogen termination, and the like. It should be noted that the hexagonal boron nitride can be similarly arranged by melting nickel. As mentioned above, liquid nickel can align any other atoms in the graphite layer when graphene is formed. The flow properties of the liquid template will push the graphite atoms around the surface to repair the interface between the graphite sheets. The subtle details of the self-organizing mechanism for automatic repair of graphite patch patches must have two different carbon atom regions on the graphene. Although the individual graphene plates use the 27 201131019 hexagonal pattern, the multiple graphite layers will be slightly Curved to have an alpha (a|pha) zone and a beta zone. The graphene plate will move and align as long as other atoms (Afar region) are aligned with the entire plate, and most of the other atoms are located in the center of the adjacent hexagon. Since the Alpha area is bonded by Van der Waals force, the sloshing electrons are too weak to interact with the nickel atoms, and only the carbon atoms in the beta zone can be attracted by the 3d orbital vacancies of nickel, which means The graphene repair fragments must face the relevant nickel atoms, which essentially pushes the graphite sheets over the nickel surface. In the case of hexagonal boron nitride, this directional alignment is more apparent because boron nitride is matched by an electron-complementary boron atom and a nitrogen atom. In the case where nickel is used to catalyze the self-organizing mechanism, nickel atoms and additional electrons can be pushed to the boron atoms because of the nature of the empty 3d orbital domain. Hexagonal boron nitride has a very broad direct energy gap and can emit far ultraviolet rays by providing an electric field. Hexagonal boron nitride is an intrinsic 1^ type semiconductor which can be strengthened by doping of beryllium (Be) or magnesium (Mg), which is self-excited (se|f "esonate", and thus can be used as a thunder The emitter and the system components (buj丨〇 are used in the heat sink. Various devices can be considered to combine hexagonal boron nitride and graphene layers. For example, the hexagonal boron nitride layer has a high energy gap' and is therefore a good insulator. By changing the graphene and the hexagonal boron nitride layer, it is possible to produce an effective capacitative material which is produced by stacking, planar or layered to form a composite cylindrical shape, and other potentials. Applications include integrated circuits of three-dimensional boron nitride transistors interconnected by graphene, batteries for automobiles, solar cells, batteries for notebook computers, and batteries for mobile phones. This composite material has a thin cross section and can produce parallel patterns.

S 28 .201131019 Solar cells. Additional uses include gas and microbial sensors (10) sensors, as well as DNA and protein wafers. The present invention also provides a graphene/hexagonal boron nitride composite. For example, in one aspect, the electron precursor material has a composite material comprising a graphite layer and a hexagonal tantalum nitride layer disposed on the graphite layer. In a particular aspect, the composite material comprises a plurality of spaced apart graphene layers and a hexagonal boron nitride layer. These layered structures can be used in a variety of electronic components, which can be understood by those of ordinary skill in the art. For example, a useful cylindrical capacitor can be formed by winding a plurality of layered structures in a plurality of intervals to form a cylindrical shape. These composite materials can be made using the smelting solvent process described herein, or by other methods capable of forming such a layered structure. For example, in one aspect, a method of fabricating a graphene/hexagonal boron nitride composite includes providing a template having a graphite layer disposed on a substrate; and depositing a boron nitride source material on the graphite layer thereon A hexagonal boron nitride layer is formed, so that a graphite layer is used as a template for the hexagonal nitride side layer deposited by any known method, including chemical vapor deposition, in the deposition process. Method (CVD) and physical vapor deposition (pvd). One of the advantages of the method disclosed herein is that it is possible to produce graphene and hexagonal boron nitride having a predetermined size and shape, since the material layer can be formed on the surface of the molten solvent, so that the graphite and hexagonal nitride are produced. The size and shape of the boron layer can be determined by the size and shape of the horizontally oriented molten solvent. Therefore, by selecting the mold in advance to produce a surface of the molten solvent having a characteristic size and shape, the shape and size of the graphite thin and hexagonalized butterfly layer can also be determined in advance. Therefore, this predetermined size 29 201131019 ^(d) is merely the result of cutting the material layer to a specific shape, but forming a layer of material that is characteristic and pre-selected or predetermined in size and shape. In another aspect of the invention, there is provided a method of forming a tantalum carbide layer, the method comprising mixing a carbon cut source and a horizontally oriented molten solvent, and depositing the carbon cut source phase from the molten solvent bath into a tantalum carbide layer throughout (4) (4) (d) Example 1 A graphite block is machined to form a disc-like shape with a height of about 3 mm. The depression is placed in a hollow with a thickness of about 彳, and the ultra-high purity graphite is dispersed. On the nickel plate, the assembly is placed in an official boiler, which provides a vacuum environment of about 10_5 Torr, then nickel is completely melted in 1500 c and maintained in a molten state. By 6 minutes, the temperature is controlled such that the edge of the graphite is about 5 〇 C ' higher than the molten nickel slurry, which can reduce the convection of the liquid and may hinder the formation of the graphene lattice formed; the boiler It is then slowly cooled and the resulting graphene layer is removed from the cooled nickel plate. _ Example 2 A graphene layer was formed according to Example 1, except that the recording plate was electrolessly plated with a nickel-phosphorus (Nj-p) layer and the nickel-phosphorus (Nj_Ni3p) layer was co-dissolved. The point is B7CTC, so the graphene plate can be placed at 1 〇〇〇. Formed in the middle. Example 3 A graphene layer was formed according to Example 1, except that the ultrapure graphite was replaced by a mixture of ultrapure graphite flakes and a 70 wt% carbonyl nickel compound 30 201131019. Example 4

丨_"(_> powder is dispersed at the bottom of the graphite mold, and a highly graphitized graphite (such as natural graphite) powder is dispersed along the...the top of the powder is dispersed." The mold assembly is under vacuum (for example, 1", "") The medium is heated to melt the alloy (eg, 1300 Χ 'for the co-solvent composition of metal · carbon). Because the density of graphite (2.25) is much lower than the density of the alloy (89), the graphite sheet will float on the fusion gold The top. In addition, because of the small piece shape of graphite, the graphite thin plate will be parallel to the surface of the dissolved gold. In this case, the graphite thin particles will be catalyzed and repaired by the iron alloy. This step is self-organizing mechanism and self. The repair mechanism can form a metric-sized graphene plate. " After the growth of the graphite thin plate, the sputum sputum will be cooled while its surface remains flat, which can be uploaded from the bottom by heat.胄, and keep the top layer at a higher temperature - once the assembly is cooled, the graphene plate, which may still stick to the alloy, is torn from the bottom layer due to the between the graphene plates The larger interval (3.35A), so the tearing action can be completed in a continuous step. Example 5 Pure natural graphite powder is mixed with 10 times by weight of nickel and copper (with the same ratio), and the mixture is placed in a graphite. In the mold, and heated to 13G under vacuum (TC for six hours. Graphite dissolves and precipitates at the edge 'It has abundant sloshing electrons, and the formed sheet floats on the liquid for eight hours, the temperature is lowered in the liquid Between the phase line and the solidus line, the liquid and solid phases are brought to equilibrium. At this stage, the unstable carbon atoms will dissolve, and the more stable atoms will precipitate, and the bribe will slowly solidify. 201131019 Hydrogen is introduced into a vacuum to further remove graphite defects by vaporized carbon atoms. Large graphene is infiltrated in hot sulfuric acid to separate into graphene layers, which are obtained by vacuum Medium 8〇 (wafer bonding on rc) is placed on the polished germanium wafer, which is further exposed to remove any defects by forming CF4 gas. Example 6 Natural The hexagonal boron nitride (hBN) powder and its lithium hydride are mixed with each other in a nitrogen atmosphere and heated to 13 Torr to form a hBN solution which is held at a temperature of 1 300 ° C for six hours, after which it is cooled to liquid. The temperature between the phase line and the solidus line, followed by the slow cooling of the eutectic melt, and the introduction of hydrogen to remove the unstable boron and nitrogen atoms, so that the formed hBN film boils in the sulfuric acid to separate the layer The obtained hBN layer is disposed on the graphite layer coated on the tantalum wafer in Example 5, and a titanium thin film is deposited on the hBN layer by sputtering. The button is engraved to form an internal digital transistor transformation. Transducer 'It is capable of converting electromagnetic signals into surface acoustic waves, and vice versa. Example 7 Hexagonal boron nitride (hBN) film is doped with antimony to make it a p-type material; Nitride Ming (AIN) is Molecular beam epitaxy (MBE) is deposited on the hBN film and is doped with carbon atoms to form an N-type material. The formed p_n junction can emit ultraviolet light (UV) immediately after receiving direct current. Of course, it should be understood that the above arrangement is only for describing the application of the principles of the present invention, and many variations and different arrangements may also be It will be apparent to those skilled in the art from the spirit and scope of the invention, and the scope of the application also encompasses the above-described changes and arrangements. Accordingly, the present invention is to be construed as being limited to the details of the embodiments of the invention, Changes in materials, shapes, styles, functions, methods of operation, vibrations, and use. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a graphene crystal lattice according to an embodiment of the present invention. Figure 2 is a cross-sectional view of a mold assembly in accordance with another embodiment of the present invention. Figure 3 is a photomicrograph of a graphene layer in accordance with still another embodiment of the present invention. Figure 4 is a photomicrograph of a graphene layer in accordance with still another embodiment of the present invention. Figure 5 is a photomicrograph of a graphene layer in still another embodiment of the present invention. Figure 6 is a photomicrograph of a graphene layer in accordance with another embodiment of the present invention.

14 dazzling solvent layer 34 molten solvent layer Fig. 7 is another embodiment of the present invention [Major component symbol description] 12 graphite 16 mold 32 sheet 36 mold 33

Claims (1)

201131019 VII. Patent application scope: 1. A method for forming a graphite layer, comprising: heating a solid metal-based material under vacuum to a dissolution temperature, wherein the dissolution temperature is lower than a melting point of the solid metal substrate; Dissolving a graphite-derived carbon atom into the heated solid metal substrate; and cooling the heated solid metal substrate at a sufficient rate such that the dissolved carbon atoms form a graphite layer to the solid metal substrate On at least one surface of the material, the graphite layer formed therein has substantially no lattice defects. 2. A method of forming a graphite layer as described in the scope of claim 2, further comprising removing the graphite layer from the solid metal substrate. 3. A method of forming a graphite layer as described in the scope of the patent application, wherein the graphite layer is highly graphitized. 4. The method for forming a graphite layer according to claim 1, wherein the solid metal substrate comprises a component selected from the group consisting of chromium, manganese, iron, cobalt, nickel, ruthenium, palladium, platinum, One of 镧, 钸, 铕, 铱, 钌, 铑, its alloys, and combinations thereof. 5. The method of forming a graphite layer according to claim 1, wherein the solid metal substrate comprises nickel. 6. The method of forming a graphite layer according to claim 1, wherein the solid metal substrate comprises a substantially less active material to adjust the carbon solubility. The method of forming a graphite layer according to claim 6, wherein the substantially less active material is selected from the group consisting of gold, silver, copper, lead, tin, zinc, combinations thereof, and alloys thereof. One. The method of forming a graphite layer as described in claim 6, wherein the substantially less active material is copper. 9. The method of forming a graphite layer according to claim 6, wherein the solid metal substrate comprises the solid metal substrate comprising a first metal layer and a second metal layer, wherein the first metal layer can be used To dissolve the carbon atoms' and the second metal layer can be used to adjust the solubility of the carbon atoms. A method of forming a graphite layer as described in the scope of claim 2, wherein the solid metal substrate is nickel, and the dissolution temperature is about 5 Å. c to approximately 1450 ° C. 11_ The method for forming a graphite layer according to the above-mentioned claim, wherein the solid metal substrate is nickel, and the dissolution temperature is from about 5 〇 to about 1000 ° C. 12_ as claimed in the specification The method of forming a graphite layer, wherein the solid metal substrate is nickel, and the dissolution temperature is from about 7 〇〇 c to about 800 ° C. 13. A method of forming a graphite layer, comprising: a solid metal substrate is disposed on a supporting substrate; a graphite carbon source is connected to the solid metal substrate; and the solid metal substrate is heated under vacuum to reach a dissolution temperature, and the β-cold solution is lower than the solution a melting point of the solid metal substrate; dissolving carbon atoms in the graphite carbon source into the heated solid metal substrate; and cooling the heated solid metal substrate at a sufficient rate to be dissolved The carbon atoms form a graphite layer on at least one surface of the solid metal substrate 'where the graphite layer has substantially no lattice defects. 35 201131019 14_ The method of forming a graphite layer as described in claim 13 The step of joining the graphite carbon source to the solid metal substrate comprises positioning the graphite carbon source between the support substrate and the solid metal substrate. 15. As described in claim 13 A method of forming a graphite layer, wherein the step of connecting the graphite carbon source to the solid metal substrate comprises using the graphite carbon source on a surface of the solid metal substrate and opposite to the support substrate. The method of forming a graphite layer according to Item 13 of the patent, further comprising preselecting the size and shape of the solid metal substrate to produce a graphite layer having a predetermined size and shape. The graphite layer produced by the method wherein the graphite layer comprises a predetermined size and shape. 18. The graphite layer according to claim 17, which is integrated in the device. The device is selected from the group consisting of molecular sensing. , light-emitting diode, liquid crystal display, solar panel, pressure sensor, surface acoustic wave filter (SAW filter), resonator, transistor, capacitor; transparent electrode, ultraviolet A UV laser, a DNA wafer, and a combination thereof. 1 9. The graphite layer of claim 17, wherein the graphite layer is coupled to a germanium wafer. 20, as claimed in claim 19 In the graphite layer, the graphite layer is etched to form an electrical connection line. 8. Pattern: (eg, next page)