JP4651851B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4651851B2
JP4651851B2 JP2001144021A JP2001144021A JP4651851B2 JP 4651851 B2 JP4651851 B2 JP 4651851B2 JP 2001144021 A JP2001144021 A JP 2001144021A JP 2001144021 A JP2001144021 A JP 2001144021A JP 4651851 B2 JP4651851 B2 JP 4651851B2
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Japan
Prior art keywords
film
temperature
region
resist pattern
gate electrode
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Expired - Fee Related
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JP2001144021A
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English (en)
Japanese (ja)
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JP2002033273A (ja
JP2002033273A5 (enExample
Inventor
一郎 上原
英臣 須沢
幸治 小野
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001144021A priority Critical patent/JP4651851B2/ja
Publication of JP2002033273A publication Critical patent/JP2002033273A/ja
Publication of JP2002033273A5 publication Critical patent/JP2002033273A5/ja
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Publication of JP4651851B2 publication Critical patent/JP4651851B2/ja
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  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2001144021A 2000-05-12 2001-05-14 半導体装置の作製方法 Expired - Fee Related JP4651851B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001144021A JP4651851B2 (ja) 2000-05-12 2001-05-14 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000140319 2000-05-12
JP2000-140319 2000-05-12
JP2001144021A JP4651851B2 (ja) 2000-05-12 2001-05-14 半導体装置の作製方法

Publications (3)

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JP2002033273A JP2002033273A (ja) 2002-01-31
JP2002033273A5 JP2002033273A5 (enExample) 2008-05-29
JP4651851B2 true JP4651851B2 (ja) 2011-03-16

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Family Applications (1)

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JP2001144021A Expired - Fee Related JP4651851B2 (ja) 2000-05-12 2001-05-14 半導体装置の作製方法

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7344825B2 (en) 2002-04-04 2008-03-18 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device, and developing apparatus using the method
US7875419B2 (en) 2002-10-29 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Method for removing resist pattern and method for manufacturing semiconductor device
US7115488B2 (en) 2003-08-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP4754792B2 (ja) * 2003-08-29 2011-08-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN105489499B (zh) * 2015-12-21 2018-12-07 武汉华星光电技术有限公司 Ltps薄膜晶体管制造方法
CN107643624A (zh) * 2017-09-22 2018-01-30 深圳市华星光电半导体显示技术有限公司 有机薄膜结构及其制备方法
US10677971B2 (en) 2017-09-22 2020-06-09 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Organic thin film structure and method for manufacturing same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02264261A (ja) * 1989-04-05 1990-10-29 Mitsubishi Electric Corp レジストパターンの形成方法
JPH04275430A (ja) * 1991-03-04 1992-10-01 Matsushita Electron Corp 半導体装置の製造方法
JPH06244155A (ja) * 1993-02-19 1994-09-02 Sumitomo Metal Ind Ltd 半導体装置のメタル配線パターン形成方法
JP2829909B2 (ja) * 1993-11-19 1998-12-02 ソニー株式会社 レジスト処理方法及びレジスト処理装置
JPH07201722A (ja) * 1993-12-28 1995-08-04 Mitsubishi Electric Corp レジストパターン形成方法
JP3592805B2 (ja) * 1995-08-17 2004-11-24 株式会社ルネサステクノロジ フォトレジストパターン形成方法
JP3310202B2 (ja) * 1997-07-24 2002-08-05 株式会社東芝 レジストパターンの形成方法
JP2000031025A (ja) * 1998-07-15 2000-01-28 Mitsubishi Electric Corp レジストパターンの形成方法
JP2000089477A (ja) * 1998-09-11 2000-03-31 Nec Corp レジストパターンの形成方法

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JP2002033273A (ja) 2002-01-31

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