JP4619104B2 - Semiconductor device - Google Patents

Description

The present invention relates to a semiconductor device in which a semiconductor chip mounted on a printed circuit board.

In recent years, electronic devices have been miniaturized, and semiconductor devices mounted on the electronic devices have also been rapidly miniaturized.
For this reason, in a semiconductor device in which a semiconductor chip is mounted on a wiring board, a bare chip is mounted instead of the semiconductor chip package, and the mounting area is greatly reduced.

Conventionally, when mounting a semiconductor chip, a through-hole is formed in the inner lead of the package, and a wire ball such as gold is attached to the through-hole by a capillary used in normal wire bonding, etc. The lead was connected (see Patent Document 1).
JP-A-3-44050

According to the conventional method for manufacturing a semiconductor device, a through hole must be formed at least in the inner lead, and an extra step is required.
In addition, as a method of mounting a semiconductor chip that does not form a through hole in the inner lead, there is a flip chip. In this method, after forming a bump on the chip side, the chip is turned over, and heat is applied to the bump. Joining is performed, and there is still a problem of requiring many steps.

Therefore, an object of the present invention is to provide a semiconductor device that can simplify this process when a semiconductor chip is mounted on a substrate.

In order to solve the above problems, a semiconductor device of the present invention includes a substrate having a conductor pattern, a semiconductor chip having an electrode pad portion, and a bump for electrically connecting the electrode pad portion and the conductor pattern, The conductor pattern is formed on the surface of the substrate, the electrode pad portion is formed on the surface of the semiconductor chip, and the semiconductor chip is placed on the back surface of the semiconductor chip facing the surface of the substrate. It is disposed on the flat surface of the substrate , and the surface of the semiconductor chip is flush with the surface of the conductor pattern, and the end surface of the electrode pad portion is exposed to the edge surface of the semiconductor chip. The bumps are arranged across the electrode pad portion and the conductor pattern.

Another semiconductor device of the present invention includes a substrate having a conductor pattern, a first semiconductor chip having a first electrode pad portion, a second semiconductor chip having a second electrode pad portion, and the first electrode pad portion. And a bump for electrically connecting the second electrode pad portion and the conductor pattern, the conductor pattern is formed on the surface of the substrate, and the first electrode pad is formed on the surface of the first semiconductor chip. And the second electrode pad portion is formed on the surface of the second semiconductor chip, the back surface of the first semiconductor chip is opposed to the surface of the substrate, and the first semiconductor chip is The first semiconductor chip is disposed on a flat surface of the substrate, the surface of the first semiconductor chip is flush with the surface of the conductor pattern, and the end surface of the first electrode pad portion is the edge surface of the first semiconductor chip. Dew Is formed so as to, the and first electrode pad portion and the bumps over said conductive pattern is arranged, to face the surface of the second semiconductor chip on the surface of the first semiconductor chip, The second semiconductor chip is disposed on the first semiconductor chip, and the second electrode pad portion is in contact with the bump .

  According to the above configuration, the semiconductor chip is arranged on the surface of the printed wiring board so that the conductor pattern is on the upper side, and the massive conductive bonding agent is arranged at once over the electrode pad portion and the conductor pattern.・ Because it was joined, the conventional process of forming a through hole in the wire frame is not required, and once the bump is formed like a flip chip, the semiconductor chip is inverted on the substrate. The semiconductor device can be manufactured by a very simple process, that is, at a low cost, unlike the case of joining by applying heat and ultrasonic waves after the placement.

  Furthermore, since another second semiconductor chip is disposed and bonded on the first semiconductor chip disposed on the printed wiring board via the conductive bonding agent for bonding, at least the semiconductor chip is bonded. A semiconductor device stacked in two stages can be manufactured in a very simple process.

[Embodiment 1]
Hereinafter, a semiconductor device and a manufacturing method thereof according to Embodiment 1 of the present invention will be described with reference to FIGS.

  In the first embodiment, as a semiconductor device, for example, a very thin (for example, about 150 to 20 μm) semiconductor chip (also referred to as a bare chip) obtained by dicing a wafer on which an electronic circuit is formed is, for example, a printed wiring board. What is implemented above is described.

  As shown in FIG. 1, the semiconductor device 1 includes an electronic circuit (hereinafter simply referred to as a substrate) 3 disposed on a surface of a printed wiring board (hereinafter simply referred to as a substrate) 3 disposed so that the surface on which the conductor pattern 2 is formed is upward. (Not shown) and the semiconductor chip 5 is disposed (placed) so that the surface on which the electrode pad portion 4 is formed is upward, and the electrode pad portion 4 formed on both side edges of the semiconductor chip 5 The conductor pattern 2 and the electronic circuit are electrically connected by a massive gold bump (an example of a conductive bonding agent) 6 disposed over the conductor pattern 2 formed on both sides of the substrate 3. is there. Note that the end face of the electrode pad portion 4 formed on the semiconductor chip 5 is formed (in a cut shape) so as to be exposed at the end face of the semiconductor chip 5.

  In short, the semiconductor device 1 includes a substrate 3 having a conductor pattern 2 formed on the surface thereof, and a semiconductor chip 5 disposed so that the back surface on which no electronic circuit is formed faces the surface of the substrate 3. And a block of gold bumps 6 disposed over the electrode pads 4 on the surface of the semiconductor chip 5 and the conductor pattern 2 of the substrate 3 to electrically connect them.

Next, a method for manufacturing this semiconductor device will be described with reference to the drawings.
First, as shown in FIG. 2A, after the substrate 3 is arranged so that the conductor pattern 2 faces upward, both conductors formed on both side edges of the substrate 3 as shown in FIG. An adhesive 7 is applied to the surface between the patterns 2 and 2.

  Next, as shown in FIG. 2C, the semiconductor chip 5 is placed (placed) on the surface of the substrate 3 in a posture in which the electronic circuit and the electrode pad portion 4 face upward (positioned upward). At this time, each side edge portion of the semiconductor chip 5 is arranged to overlap the conductor pattern 2 with a predetermined distance (for example, about several μm, more preferably 3 μm) L.

  In this state, the adhesive 7 fixes the semiconductor chip 5 at a predetermined position on the surface of the substrate 3 in an upward posture. Of course, at this time, each electrode pad portion 4 and the conductor pattern 2 are positioned so as to correspond one-to-one.

  Next, as shown in FIGS. 2D to 2E, a wire ball for bump formation (a gold ball, which becomes a bump) 6 is connected to the electrode pad portion 4 and the conductor pattern 2 by the capillary 11. In other words, after being placed (placed) so as to be in contact with each other together, heat and ultrasonic waves (heating and pressurization) are applied to perform diffusion bonding to form bumps 6 that connect the two.

That is, by arranging and bonding the bump 6 over both at once (by one step), the electrode pad portion 4 and the conductor pattern 2 are mechanically and electrically bonded.
Next, as shown in FIG. 2 (f), the top 6a of the bump 6 generated at the time of formation is flattened by the presser 12, so that the substrate as shown in FIGS. 2 (g) and (h) is obtained. 3 is completed.

In this way, the semiconductor chip 5 is arranged on the surface of the substrate 3 so that the conductor pattern 2 is on the upper side, and a wire that is a massive conductive bonding agent is formed across the electrode pad portion 4 and the conductor pattern 2. Since the balls 6 are arranged at a time and the bumps 6 are formed between them, a process of forming a through hole in the wire frame is not required as in the prior art, and once like a flip chip, Unlike semiconductor devices, after bumps are formed, semiconductor chips are inverted and placed on a substrate, and then bonded by applying heat, ultrasonic waves, etc., semiconductor devices are manufactured in a very simple process, that is, at low cost. Even if the semiconductor chip is very thin, it can be obtained simply by placing bumps from above after placing it on the substrate so that the surface on which the electronic circuit is formed faces upward, Production is very easy.
[Embodiment 2]
Next, a semiconductor device and a manufacturing method thereof according to Embodiment 2 of the present invention will be described with reference to FIG.

  In the first embodiment described above, the conductor pattern and the electrode pad portion are bonded via the bump. However, in the second embodiment, a conductive paste (for example, silver paste, solder, etc.) is used. In the following description, the same constituent members as those in the first embodiment will be described with the same numbers.

  As shown in FIG. 3F, in brief, the semiconductor device 21 has a substrate 3 on which a conductor pattern 2 is formed on the surface, and a back surface on which the electronic circuit is not formed on the surface of the substrate 3. A semiconductor chip 5 disposed so as to face the electrode, and a block-shaped conductive paste (which is disposed across the electrode pad portion 4 on the surface of the semiconductor chip 5 and the conductor pattern 2 of the substrate 3 and electrically connects them) An example of a conductive bonding agent), for example, a silver paste (a mixture of a thermosetting resin material and silver) (may be solder) 22.

Next, a method for manufacturing the semiconductor device 21 will be described with reference to FIG.
First, as shown in FIG. 3A, after the substrate 3 is arranged so that the conductor pattern 2 faces upward, both conductors formed on both side edges of the substrate 3 as shown in FIG. An adhesive 7 is applied to the surface between the patterns 2 and 2.

  Next, as shown in FIG. 3C, the semiconductor chip 5 is placed (placed) on the surface of the substrate 3 in such a posture that the electronic circuit and the electrode pad portion 4 face upward (positioned upward). At this time, each side edge portion of the semiconductor chip 5 is arranged to overlap the conductor pattern 2 with a predetermined distance (for example, about several μm, more preferably 3 μm) L.

  In this state, the adhesive 7 fixes the semiconductor chip 5 at a predetermined position on the surface of the substrate 3 in an upward posture. Of course, at this time, each electrode pad portion 4 and the conductor pattern 2 are positioned so as to correspond one-to-one.

  Next, as shown in FIGS. 3D to 3E and FIG. 3F, the dispenser 31 is used to apply the massive silver paste 22 over the electrode pad portion 4 and the conductor pattern 2, that is, both After placing (also referred to as mounting or coating) so as to come into contact with each other, the two are connected by applying heat to cure.

  That is, the electrode pad 4 and the conductor pattern 2 are mechanically and electrically bonded by arranging and bonding the silver paste 22 over both at once (by one process), and the semiconductor to the substrate 3 is bonded. The mounting of the chip 5 is completed.

  In this way, the semiconductor chip 5 is arranged on the surface of the substrate 3 so that the conductor pattern 2 is on the upper side, and a block-shaped conductive paste, for example, a silver paste 22 is formed across the electrode pad portion 4 and the conductor pattern 2. As a conventional method, the step of forming a through hole in the wire frame is unnecessary, and a bump is once formed after a semiconductor chip is formed like a flip chip. Unlike the case where the chip is inverted and placed on the substrate and then bonded by applying heat and ultrasonic waves, a semiconductor device can be manufactured with a very simple process, that is, at a low cost. Even if the chip is very thin, it can be obtained simply by placing a lump of silver paste from above after placing it on the substrate so that the surface on which the electronic circuit is formed faces upward. It is very easy.

Next, a semiconductor device and a manufacturing method thereof according to Embodiment 3 of the present invention will be described with reference to FIG.
In the first embodiment, after the semiconductor chip 5 is placed (placed) on the printed wiring board 3, the electrode pad portion 4 and the conductor pattern 2 are joined at once by the bumps 6. In the semiconductor device according to Aspect 3, another semiconductor chip (hereinafter referred to as a second semiconductor chip and the semiconductor chip 5 directly disposed on the substrate is referred to as a first semiconductor chip) on the semiconductor chip 5. Is arranged.

Hereinafter, a method for manufacturing the semiconductor device will be described. In the description, the process after the first semiconductor chip described in the first embodiment is arranged will be described.
That is, as shown in FIGS. 4A to 4B, the second semiconductor chip 42 is placed on the lower first semiconductor chip 5 with the electronic circuit (not shown) side facing downward. After placing (mounting) the electrode pad portion 43 so as to face the surface (upper surface) and to be positioned on the raised top portion 6a of the gold bump 6, heat and ultrasonic waves are applied to the bump 6 to The semiconductor chips 5 and 42 are bonded to the substrate 3 side. At this time, the insulating reinforcing adhesive 44 applied to the entire surface (lower surface) of the second semiconductor chip 42 spreads and fills the gap between the surfaces of the semiconductor chips 5 and 42. Of course, when the second semiconductor chip 42 is disposed on the first semiconductor chip 5, the top portion 6 a of the bump 6 penetrates the adhesive 44 applied to the entire surface and comes into contact with the electrode pad portion 43. Become. Note that the electrode pad portion 43 formed on the second semiconductor chip 42 is provided, for example, at a position that enters about 15 μm from the side edge of the second semiconductor chip 42.

  Accordingly, simultaneously with the mounting of the lower first semiconductor chip 5, the upper second semiconductor chip 42 has a layered structure on the substrate 3, and the bumps 6 for bonding the first semiconductor chip 5 are used to form a hierarchy. Can be implemented.

  In this case, one electrode pad portion (4 or 43) in both semiconductor chips 5 and 42 that are in contact with each other via the bump 6 is electrically connected to the electronic circuit of the semiconductor chip to which it belongs, The electrode pad portion (43 or 4) is a dummy electrode that is not electrically connected to the electronic circuit of the semiconductor chip to which it belongs, so that the electronic circuits of the two semiconductor chips mounted opposite to each other can be independent Thus, a structure of being electrically connected to the substrate 3 side can be obtained.

Here, the configuration of the semiconductor device 41 will be briefly described.
In the semiconductor device 41 formed by mounting the semiconductor chips in two layers, the substrate 3 on which the conductor pattern 2 is formed on the front surface is opposed to the back surface on which the electronic circuit is not formed on the surface of the substrate 3. The first semiconductor chip 5 disposed, the second semiconductor chip 42 disposed such that the surface on which the electronic circuit is formed faces the surface of the first semiconductor chip 5 on which the electronic circuit is formed, and the second semiconductor chip 42 Gold bumps 6, which are bulky conductive bonding agents arranged across the electrode pad portions 4, 43 of the first and second semiconductor chips 5, 42 and the conductor pattern 2 of the substrate 3 to electrically connect them. It is comprised from.

  In this manner, by arranging and bonding the first semiconductor chip 5 to the surface of the substrate 3 via the gold wire ball (bump) 6 that is a massive conductive bonding agent, The semiconductor device 41 having a stacked structure can be obtained by a simple process.

Next, a semiconductor device and a manufacturing method thereof according to Embodiment 4 of the present invention will be described with reference to FIG.
In the semiconductor device 21 according to the second embodiment, after the semiconductor chip 5 is disposed (placed) on the printed wiring board 3, the electrode pad portion 4 and the conductor pattern 2 are electrically conductive paste, for example, silver paste 22 However, in the semiconductor device according to the fourth embodiment, another semiconductor chip (hereinafter referred to as a second semiconductor chip and also directly disposed on the substrate) is formed on the semiconductor chip 5. The semiconductor chip 5 is referred to as a first semiconductor chip) 52.

Hereinafter, a method for manufacturing the semiconductor device will be described. In the description, the process after the placement of the first semiconductor chip described in the second embodiment will be described.
That is, as shown in FIGS. 5A to 5B, the second semiconductor chip 52 is placed on the lower first semiconductor chip 5 with its electronic circuit (not shown) side facing downward. After arranging (mounting) the electrode pad portion 53 so as to face the surface (upper surface) and to be positioned on the conductor pattern 2, heat is applied to the silver paste 22, which is a conductive paste, and both the semiconductor chips 5. , 52 are bonded to the substrate 3 side, and an insulating reinforcing resin 54 is filled between and around the semiconductor chips 5, 52 as shown in FIG.

  Therefore, simultaneously with the mounting of the lower first semiconductor chip 5, the upper second semiconductor chip 52 has a laminated structure on the substrate 3, and the silver paste 22 for bonding the first semiconductor chip 5 is used. Can be implemented in layers.

  Of course, also in this case, one electrode pad portion (4 or 53) in both semiconductor chips 5 and 52 that are in contact with each other via the silver paste 22 is electrically connected to the electronic circuit of the semiconductor chip to which it belongs. The other electrode pad portion (53 or 4) is a dummy electrode that is not electrically connected to the electronic circuit of the semiconductor chip to which it belongs, so that the electronic circuits of the two semiconductor chips mounted facing each other are Each can be independently connected to the substrate 3 side.

  As described above, the first semiconductor chip 5 is laminated on the surface of the substrate 3 and the second semiconductor chip 52 is arranged and bonded via the silver paste 22 which is a bulky conductive bonding agent, thereby being laminated in a simple process. A semiconductor device 51 having a structure can be obtained.

In the third and fourth embodiments described above, another semiconductor chip can be stacked above the second semiconductor chip.
In each of the above embodiments, the case where the thickness of the semiconductor chip mounted on the substrate is thicker than the thickness of the conductor pattern formed on the surface of the substrate has been illustrated and described. However, it may be as thin as the thickness of the conductor pattern.

  If this case is described as being applied to the first embodiment, as shown in FIG. 6, the semiconductor device 61 includes a substrate 3 on which a conductor pattern 2 having a predetermined thickness is formed on both sides of the surface, The surface of the substrate 3 is disposed between the conductor patterns 2 and 2 on both sides with an adhesive 7 so that the back surface on which the electronic circuit is not formed is opposed, and the thickness of the conductor pattern 2 is substantially the same. More specifically, the semiconductor chip 62 having a thickness that is flush with the surface of the conductor pattern after mounting, the electrode pad portion 63 on the surface of the semiconductor chip 62, and the conductor pattern 2 of the substrate 3 It is comprised from the block-shaped gold bump 6 arrange | positioned over and connecting these electrically.

Next, a method for manufacturing this semiconductor device will be described with reference to the drawings.
First, as shown in FIG. 6A, after the substrate 3 is disposed so that the conductor pattern 2 faces upward, both conductors formed on both side edges of the substrate 3 as shown in FIG. 6B. An adhesive 7 is applied to the surface between the patterns 2 and 2 with a thickness thinner than that of the conductor pattern 2.

  Next, as shown in FIG. 6 (c), the semiconductor circuit has a posture in which the electronic circuit and the electrode pad portion 63 face upward (positioned upward) on the surface of the substrate 3 and between the conductor patterns 2 and 2. The chip 62 is placed (placed). As described above, the thicknesses of the semiconductor chip 62 and the adhesive 7 are considered so that the surface of the semiconductor chip 62 and the surfaces of the conductor patterns 2 on both sides are flush (or substantially flush). Has been. In other words, the total thickness of the semiconductor chip 62 and the adhesive 7 is made to match (or substantially match) the thickness of the conductor pattern 2.

  In this state, the adhesive 7 fixes the semiconductor chip 62 at a predetermined position on the surface of the substrate 3 in an upward posture. Of course, at this time, each electrode pad part 63 and the conductor pattern 2 are positioned so as to correspond one-to-one.

  Next, as shown in FIGS. 6D to 6E, a wire ball for bump formation (a gold ball, which becomes a bump) 6 is connected to the electrode pad portion 63 and the conductor pattern 2 by the capillary 11. In other words, after being placed (placed) so as to be in contact with each other together, heat and ultrasonic waves (heating and pressurization) are applied to perform diffusion bonding to form bumps 6 that connect the two.

That is, by arranging and bonding the bumps 6 over both at once (by one step), the electrode pad portion 63 and the conductor pattern 2 are mechanically and electrically bonded.
Next, as shown in FIG. 6F, the top portion 6a of the bump 6 generated at the time of formation is flattened by the presser 12, so that the semiconductor to the substrate 3 as shown in FIG. The mounting of the chip 62 is completed.

  Also in this case, a semiconductor device on which a very thin semiconductor chip is mounted can be easily manufactured as in the first embodiment. Of course, the remaining Embodiments 2 to 4 can also be applied.

  According to the semiconductor device and the manufacturing method thereof of the present invention, a conductive bonding agent is applied at once to a conductor pattern and an electrode pad portion on a substrate after the surface of a semiconductor chip is disposed on a printed wiring board. By arranging and bonding, the semiconductor chip can be mounted on the substrate, and is particularly effective for reducing the height of the package in which the semiconductor chip is multilayered.

1 is a main part sectional view of a semiconductor device according to a first embodiment of the present invention; FIG. 22 is an essential part cross-sectional view for illustrating the method of manufacturing the semiconductor device. It is principal part sectional drawing for demonstrating the manufacturing method of the semiconductor device which concerns on Embodiment 2 of this invention. It is principal part sectional drawing for demonstrating the manufacturing method of the semiconductor device which concerns on Embodiment 3 of this invention. It is principal part sectional drawing for demonstrating the manufacturing method of the semiconductor device which concerns on Embodiment 4 of this invention. It is principal part sectional drawing for demonstrating the manufacturing method in the modification of the semiconductor device which concerns on Embodiment 1 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Conductor pattern 3 Printed wiring board 4 Electrode pad part 5 Semiconductor chip 6 Bump 7 Adhesive 21 Semiconductor device 22 Silver paste 41 Semiconductor device 42 2nd semiconductor chip 43 Electrode pad part 51 Semiconductor device 52 2nd semiconductor chip 53 Electrode Pad part 61 Semiconductor device 62 Semiconductor chip 63 Electrode pad part

Claims (3)

A substrate having a conductor pattern;
A semiconductor chip having an electrode pad portion;
A bump for electrically connecting the electrode pad portion and the conductor pattern;
The conductor pattern is formed on the surface of the substrate,
The electrode pad portion is formed on the surface of the semiconductor chip,
The back surface of the semiconductor chip is opposed to the surface of the substrate, and the semiconductor chip is disposed on the flat surface of the substrate,
The surface of the semiconductor chip is flush with the surface of the conductor pattern;
The end surface of the electrode pad portion is formed so as to be exposed on the end surface of the semiconductor chip,
The bump is disposed across the electrode pad portion and the conductor pattern. A semiconductor device, wherein: A substrate having a conductor pattern;
A first semiconductor chip having a first electrode pad portion;
A second semiconductor chip having a second electrode pad portion;
A bump for electrically connecting the first electrode pad portion, the second electrode pad portion and the conductor pattern;
The conductor pattern is formed on the surface of the substrate,
The first electrode pad portion is formed on a surface of the first semiconductor chip;
The second electrode pad portion is formed on a surface of the second semiconductor chip;
The back surface of the first semiconductor chip is opposed to the surface of the substrate, and the first semiconductor chip is disposed on the flat surface of the substrate,
The surface of the first semiconductor chip is flush with the surface of the conductor pattern;
An end surface of the first electrode pad portion is formed to be exposed on an end surface of the first semiconductor chip;
The bumps are disposed across the first electrode pad portion and the conductor pattern,
The second semiconductor chip is disposed on the first semiconductor chip with the surface of the second semiconductor chip facing the surface of the first semiconductor chip;
The semiconductor device, wherein the second electrode pad section is in contact with the bump . The semiconductor device according to claim 1, wherein gold is used as the bump .

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