JP2005251910A - Circuit board, its manufacturing method, electrooptical device, and electronic apparatus - Google Patents

Circuit board, its manufacturing method, electrooptical device, and electronic apparatus Download PDF

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JP2005251910A
JP2005251910A JP2004058991A JP2004058991A JP2005251910A JP 2005251910 A JP2005251910 A JP 2005251910A JP 2004058991 A JP2004058991 A JP 2004058991A JP 2004058991 A JP2004058991 A JP 2004058991A JP 2005251910 A JP2005251910 A JP 2005251910A
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thin film
substrate
wiring
circuit board
insulating film
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Tomoyuki Kamakura
知之 鎌倉
Wakao Miyazawa
和加雄 宮沢
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a technique capable of securing a good connection state between a thin film circuit chip and a wiring board. <P>SOLUTION: A method for manufacturing a circuit board comprises steps of arranging a thin film circuit chip (14) provided on one face with a connection terminal (16), on one face of the board toward a side that the connection terminal is not abutted on a board (10); forming first wiring (12) on one face of the board; forming an insulating film (18) on one face of the board so as to bury at least between a given location to be connected of the first wiring and the thin film circuit chip; applying energy on the surface of the insulating film corresponding to a given path connecting the location connected with the connection terminal to form an uneven area (20); supplying a liquid material to the uneven area of the insulating film; and solidifying the supplied liquid material, thereby forming second wiring (22) which electrically connects the location connected with the connection terminal. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、薄膜トランジスタ等の薄膜素子を含む薄膜回路チップを基板上に設けてなる回路基板及び当該回路基板を含んで構成される装置等に関する。   The present invention relates to a circuit board in which a thin film circuit chip including a thin film element such as a thin film transistor is provided on a substrate, a device configured to include the circuit board, and the like.

薄膜トランジスタ等の薄膜素子の形成法として転写技術を用いる手法が知られている。例えば、特開平１０−１２５９３１号公報（特許文献１）には、予め転写元基板上に剥離層を介して薄膜回路チップ等の被転写体を形成しておき、その後当該薄膜回路チップ等を転写先基板に接合し、剥離層に光照射等を行って剥離を生じさせることにより被転写体を転写先基板に転写する手法が開示されている。この手法によれば、薄膜回路チップ等を好適な製造条件で転写元基板上に形成した後に所望の転写先基板へ移動させることができるので、例えばプラスチック基板など、薄膜素子等の製造条件に適合する特性（耐熱性等）が乏しい基板上に薄膜素子等を形成することが可能となる。   As a method for forming a thin film element such as a thin film transistor, a method using a transfer technique is known. For example, in Japanese Patent Application Laid-Open No. 10-125931 (Patent Document 1), a transfer body such as a thin film circuit chip is previously formed on a transfer source substrate via a release layer, and then the thin film circuit chip or the like is transferred. A technique is disclosed in which a transfer target is transferred to a transfer destination substrate by bonding to the destination substrate and causing the release layer to be irradiated with light or the like to cause peeling. According to this technique, a thin film circuit chip or the like can be moved to a desired transfer destination substrate after being formed on the transfer source substrate under suitable manufacturing conditions, so that it is suitable for the manufacturing conditions of thin film elements such as plastic substrates. It is possible to form a thin film element or the like on a substrate having poor characteristics (such as heat resistance).

特開平１０−１２５９３１号公報Japanese Patent Laid-Open No. 10-125931

上述した転写法によって薄膜回路チップを基板上に形成する場合に、薄膜回路チップに設けておいた接続端子（電極パッド）と基板側の配線の所定箇所との間に異方性導電材を介在させて電気的接続を確保する手法が検討されていた。かかる手法は、通常の半導体チップ等における電気的接続の手段としては広く利用されているものである。   When a thin film circuit chip is formed on a substrate by the transfer method described above, an anisotropic conductive material is interposed between a connection terminal (electrode pad) provided on the thin film circuit chip and a predetermined portion of the wiring on the substrate side. Thus, a method for ensuring electrical connection has been studied. Such a technique is widely used as a means for electrical connection in a normal semiconductor chip or the like.

しかしながら、上記手法を薄膜回路チップの接続に適用した場合には、接続箇所の信頼性を確保することが難しかった。これは、薄膜回路チップがその薄さ故に通常の半導体チップ等に比べて機械的強度が弱いことに起因する。すなわち、異方性導電材を用いる場合には、当該異方性導電材を薄膜回路チップと基板の間に介在させた後に薄膜回路チップと基板とを圧着するが、この圧着時の圧力によって薄膜回路チップに亀裂或いは変形などの損傷が生じ、接続箇所に接触不良が生じるためである。これらの損傷は導電性粒子を含む接着剤等の特性として要求される適正な圧力をかけた場合であっても生じ得るものであった。よって、上記課題を解決し得る新たな接続手法が望まれていた。   However, when the above method is applied to the connection of the thin film circuit chip, it is difficult to ensure the reliability of the connection location. This is because the mechanical strength of the thin film circuit chip is weaker than that of a normal semiconductor chip or the like because of its thinness. That is, when an anisotropic conductive material is used, the thin film circuit chip and the substrate are pressure-bonded after the anisotropic conductive material is interposed between the thin film circuit chip and the substrate. This is because damage such as cracks or deformation occurs in the circuit chip, resulting in poor contact at the connection location. These damages can occur even when an appropriate pressure required as a characteristic of an adhesive containing conductive particles is applied. Therefore, a new connection method that can solve the above problems has been desired.

そこで、本発明は、薄膜回路チップと配線基板との良好な接続状態を確保することを可能とする技術を提供することを目的とする。   Therefore, an object of the present invention is to provide a technique that can ensure a good connection state between a thin film circuit chip and a wiring board.

第１の態様の本発明は、配線を有する基板上に薄膜回路チップを配置して構成される回路基板の製造方法であって、薄膜回路を含み、当該薄膜回路と外部との電気的な接続を担う接続端子が一方面に設けられた薄膜回路チップを、上記接続端子を基板と当接しない側へ向けて当該基板の一方面上に配置する第１工程と、上記基板の一方面上に第１配線を形成する第２工程と、上記基板の一方面上に、少なくとも上記第１配線の所定の接続対象箇所と上記薄膜回路チップとの間を埋めるように絶縁膜を形成する第３工程と、上記接続対象箇所と上記接続端子とを結ぶ所定経路に対応する上記絶縁膜の表面にエネルギーを与えて凹凸領域を形成する第４工程と、上記絶縁膜の上記凹凸領域上に液体材料を供給する第５工程と、供給された上記液体材料を固化させることにより、上記接続対象箇所と上記接続端子とを電気的に接続する第２配線を形成する第６工程と、を含む。   The first aspect of the present invention is a circuit board manufacturing method configured by arranging a thin film circuit chip on a substrate having wiring, including the thin film circuit, and electrical connection between the thin film circuit and the outside A first step of disposing a thin film circuit chip provided with a connection terminal on one side of the substrate on one side of the substrate with the connection terminal facing away from the substrate; and on one side of the substrate A second step of forming the first wiring, and a third step of forming an insulating film on one surface of the substrate so as to fill at least a portion between the predetermined connection target portion of the first wiring and the thin film circuit chip. A fourth step of applying energy to the surface of the insulating film corresponding to a predetermined path connecting the connection target portion and the connection terminal to form an uneven region; and a liquid material on the uneven region of the insulating film 5th process to supply and the said liquid supplied By solidifying the fee includes a sixth step of forming a second wiring electrically connecting the connection target portion and the connecting terminal.

かかる製造方法によれば、薄膜回路チップに圧力をかけることなく薄膜回路チップと基板側の配線とを電気的に接続することが可能となる。したがって、薄膜回路チップに圧力による損傷が生じることがなく、薄膜回路チップと配線基板との良好な接続状態を容易に確保することが可能となる。   According to this manufacturing method, the thin film circuit chip and the wiring on the substrate side can be electrically connected without applying pressure to the thin film circuit chip. Therefore, the thin film circuit chip is not damaged by pressure, and a good connection state between the thin film circuit chip and the wiring board can be easily ensured.

上述した第３工程は、上記絶縁膜を上記基板の一方面上の略全体に形成することが好ましい。この絶縁膜は、例えば樹脂材料や無機材料によって形成するとよい。   In the third step described above, it is preferable that the insulating film is formed on substantially the entire surface on one side of the substrate. This insulating film is preferably formed of, for example, a resin material or an inorganic material.

これにより、絶縁膜の形成がより容易となる。   Thereby, formation of an insulating film becomes easier.

上述した第４工程は、レーザ光の照射によって上記エネルギーの付与を行うことが好ましい。   In the fourth step described above, it is preferable to apply the energy by laser light irradiation.

これにより、必要な強度のエネルギーを凹凸領域を形成すべき箇所へ容易かつ高精度に付与することが可能となる。   As a result, it is possible to easily and highly accurately apply energy having a required strength to a portion where the uneven region is to be formed.

上述した第５工程における液体材料は、導電性粒子を含むものであることが好ましい。   The liquid material in the fifth step described above preferably includes conductive particles.

凹凸領域の形状効果により、当該領域に導電性粒子が留まりやすくなり、それ以外の領域に広がりにくくする効果（選択性）が得られるため、第２電極の線幅等の精度を確保しやすくなる。また、導電性粒子が留まりやすくなるアンカー効果が得られ、第２配線となる導電膜の密着性を向上させることができる。   The shape effect of the uneven region makes it easier for the conductive particles to stay in the region, and an effect (selectivity) that makes it difficult to spread to other regions is obtained, so that it is easy to ensure the accuracy of the line width and the like of the second electrode. . In addition, an anchor effect that the conductive particles easily stay can be obtained, and the adhesion of the conductive film to be the second wiring can be improved.

上述した第４工程は、上記凹凸領域の当該凹凸の差が少なくとも上記導電性粒子の径より大きくなるように上記エネルギーの付与条件を設定して上記凹凸領域を形成することが好ましい。   In the fourth step described above, it is preferable to form the uneven region by setting the energy application condition so that the unevenness difference of the uneven region is at least larger than the diameter of the conductive particles.

これにより、凹凸領域と導電性粒子との上述した相互作用（選択性、アンカー効果等）をより効果的に得ることが可能となる。   As a result, the above-described interaction (selectivity, anchor effect, etc.) between the uneven region and the conductive particles can be obtained more effectively.

上述した第５工程における上記液体材料の供給は、液滴吐出法により行うことが好ましい。   The supply of the liquid material in the fifth step described above is preferably performed by a droplet discharge method.

これにより、液体材料の供給量や供給位置などを高精度を制御することが可能となる。   This makes it possible to control the supply amount and supply position of the liquid material with high accuracy.

第２の態様の本発明は、上記第１の態様の本発明にかかる製造方法を用いて得られる回路基板であり、以下のような構造的特徴を有する。すなわち、本発明の回路基板は、基板と、上記基板の少なくとも一方面に配置される第１配線と、薄膜回路を含み、上記基板の一方面上に配置される薄膜回路チップと、上記薄膜回路チップの上記基板と当接しない側の面に配置され、上記薄膜回路と外部との電気的な接続を担う接続端子と、上記基板の一方面上に、少なくとも上記第１配線の所定の接続対象箇所と上記薄膜回路チップとの間を埋めるように設けられる絶縁膜と、上記接続対象箇所と上記接続端子とを結ぶ所定経路に沿って上記絶縁膜の表面に設けられる凹凸領域と、上記絶縁膜の上記凹凸領域上に設けられ、上記第１配線の上記接続対象箇所と上記薄膜回路チップの上記接続端子とを電気的に接続する第２配線と、を備える。   The second aspect of the present invention is a circuit board obtained by using the manufacturing method according to the first aspect of the present invention, and has the following structural features. That is, a circuit board of the present invention includes a substrate, a first wiring disposed on at least one surface of the substrate, a thin film circuit including a thin film circuit, and the thin film circuit disposed on the one surface of the substrate. A connection terminal that is disposed on a surface of the chip that does not contact the substrate, and that is responsible for electrical connection between the thin film circuit and the outside, and a predetermined connection target of at least the first wiring on one surface of the substrate An insulating film provided so as to fill a space between the portion and the thin film circuit chip, an uneven region provided on the surface of the insulating film along a predetermined path connecting the connection target portion and the connection terminal, and the insulating film And a second wiring for electrically connecting the connection target portion of the first wiring and the connection terminal of the thin film circuit chip.

かかる構成によれば、薄膜回路チップと配線基板との良好な接続状態を容易に確保することが可能となる。   According to such a configuration, it is possible to easily ensure a good connection state between the thin film circuit chip and the wiring board.

上述した絶縁膜は、上記基板の一方面上の略全体に設けられることが好ましい。   It is preferable that the above-described insulating film is provided on substantially the entire surface on one side of the substrate.

これにより、絶縁膜を形成する際のプロセスが容易になる。また、当該絶縁膜により第１配線相互間を絶縁する機能や、基板表面を保護する機能などを兼用させて構成の簡素化を図ることも可能となる。   This facilitates the process when forming the insulating film. It is also possible to simplify the configuration by combining the function of insulating the first wirings with the insulating film and the function of protecting the substrate surface.

上述した第２配線は、導電性粒子を含む液体材料を滴下した後に固化させて形成されるものであり、上記凹凸領域は、当該凹凸の差が少なくとも上記導電性粒子の径より大きくなるように形成されることが好ましい。   The second wiring described above is formed by dropping a liquid material containing conductive particles and then solidifying, and the uneven region has a difference in the unevenness that is at least larger than the diameter of the conductive particles. Preferably it is formed.

上述した絶縁膜は、樹脂材料又は無機材料からなることが好ましい。   The insulating film described above is preferably made of a resin material or an inorganic material.

第３の態様の本発明は、上述した回路基板を含んで構成される電気光学装置である。ここで「電気光学装置」とは、電気的作用によって発光するあるいは外部からの光の状態を変化させる電気光学素子を備えた表示装置一般をいい、自ら光を発するものと外部からの光の通過を制御するもの双方を含む。例えば、電気光学素子として、液晶素子、電気泳動粒子が分散した分散媒体を有する電気泳動素子、ＥＬ（エレクトロルミネッセンス）素子、電界の印加により発生した電子を発光板に当て発光させる電子放出素子を備えたアクティブマトリクス型の表示装置等をいう。   The third aspect of the present invention is an electro-optical device including the circuit board described above. The term “electro-optical device” as used herein refers to a general display device that includes an electro-optical element that emits light by electrical action or changes the state of light from the outside. The device that emits light by itself and the passage of light from the outside Including those that control For example, as an electro-optical element, a liquid crystal element, an electrophoretic element having a dispersion medium in which electrophoretic particles are dispersed, an EL (electroluminescence) element, and an electron emitting element that emits light by applying electrons generated by applying an electric field to a light emitting plate An active matrix display device or the like.

第４の態様の本発明は、上述した回路基板あるいは電気光学装置を含んで構成される電子機器である。ここで「電子機器」とは、回路基板やその他の要素を要素を備え、一定の機能を奏する機器一般をいい、その構成に特に限定はない。かかる電子機器としては、例えば、ＩＣカード、携帯電話、ビデオカメラ、パーソナルコンピュータ、ヘッドマウントディスプレイ、リア型またはフロント型のプロジェクター、テレビジョン（ＴＶ）、ロールアップ式ＴＶ、さらに表示機能付きファックス装置、デジタルカメラのファインダ、携帯型ＴＶ、ＤＳＰ装置、ＰＤＡ、電子手帳、電光掲示盤、宣伝公告用ディスプレイ等が含まれる。   The fourth aspect of the present invention is an electronic apparatus including the circuit board or the electro-optical device described above. Here, the “electronic device” refers to a general device having a circuit board and other elements and having a certain function, and the configuration thereof is not particularly limited. Examples of such electronic devices include an IC card, a mobile phone, a video camera, a personal computer, a head mounted display, a rear or front projector, a television (TV), a roll-up TV, and a fax machine with a display function. Examples include digital camera finders, portable TVs, DSP devices, PDAs, electronic notebooks, electronic bulletin boards, and advertising announcement displays.

以下、本発明の実施の形態について図面を参照しながら説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図１は、一実施形態の回路基板の構造を説明する図（概略図）である。また図２は、回路基板の図１に示すＩＩ−ＩＩ線断面における断面構造を説明する図である。図１及び図２に示す回路基板は、配線を有する基板上に、薄膜トランジスタ等の薄膜素子を含んでなる薄膜回路チップを配置（実装）してなるものである。   FIG. 1 is a diagram (schematic diagram) illustrating the structure of a circuit board according to an embodiment. FIG. 2 is a diagram illustrating a cross-sectional structure of the circuit board taken along line II-II shown in FIG. The circuit board shown in FIGS. 1 and 2 is formed by mounting (mounting) a thin film circuit chip including a thin film element such as a thin film transistor on a substrate having wiring.

基板１０は、本実施形態の回路基板の土台（ベース）となるものである。この基板１０としては、ガラス基板、プラスチック基板など種々のものを用いることができる。また、基板１０として、ポリイミドなど各種の樹脂材料からなりフレキシブル性を有する基板を用いることもできる。   The substrate 10 is a base (base) of the circuit board of the present embodiment. Various substrates such as a glass substrate and a plastic substrate can be used as the substrate 10. Further, as the substrate 10, a flexible substrate made of various resin materials such as polyimide can be used.

第１配線１２は、薄膜回路チップ１６とともに電気回路を構成するものであり、例えば銀（Ａｇ）、アルミニウム（Ａｌ）、銅（Ｃｕ）などの導電体からなるものである。   The first wiring 12 constitutes an electric circuit together with the thin film circuit chip 16, and is made of a conductor such as silver (Ag), aluminum (Al), or copper (Cu).

薄膜回路チップ１４は、一つ以上の薄膜素子（トランジスタ、ダイオード、抵抗、キャパシタ、インダクタ等）からなる電気回路を含み、基板１０上に配置される。この薄膜回路チップ１４は、電極パッド（接続端子）１６を介して外部と電気的に接続される。   The thin film circuit chip 14 includes an electric circuit composed of one or more thin film elements (transistors, diodes, resistors, capacitors, inductors, etc.), and is disposed on the substrate 10. The thin film circuit chip 14 is electrically connected to the outside through electrode pads (connection terminals) 16.

電極パッド１６は、薄膜回路チップ１４の上側、すなわち基板１０と当接しない側の面に設けられており、薄膜回路チップ１４内の電気回路と外部との電気的接続を担うものである。この電極パッド１６は、例えば、ニッケル（Ｎｉ）、金（Ａｕ）、銅（Ｃｕ）、錫（Ｓｎ）、アルミニウム（Ａｌ）、窒化チタン（ＴｉＮ）などの導電体からなる。また電極パッド１６のサイズは、設計上やその他の都合により適宜設定し得るものであり、例えば２０μｍ〜１００μｍ角程度に設定される。   The electrode pad 16 is provided on the upper side of the thin film circuit chip 14, that is, on the side not in contact with the substrate 10, and is responsible for electrical connection between the electric circuit in the thin film circuit chip 14 and the outside. The electrode pad 16 is made of a conductor such as nickel (Ni), gold (Au), copper (Cu), tin (Sn), aluminum (Al), or titanium nitride (TiN). The size of the electrode pad 16 can be set as appropriate for design and other reasons, and is set to about 20 μm to 100 μm square, for example.

絶縁膜１８は、第１配線１２と薄膜回路チップ１４との間を埋めるようにして基板１０の一方面上の略全体に設けられる。本例の絶縁膜１８は、第１配線１２の所定の接続箇所と薄膜回路チップ１４上の電極パッド１６との間に第２配線２２を容易に形成し得るようにすべく設けられるものである。なお、かかる機能に着目すれば、絶縁膜１８は少なくとも第２配線２２の形成対象となる領域にのみ設けられていれば本発明の目的を達し得るが、基板１０の一方面上の略全面に設けるようにすることで絶縁膜１８の形成がより容易となる。本例の絶縁膜１８は、ポリイミド等の樹脂材料（有機高分子材料）を用いて形成される。   The insulating film 18 is provided on substantially the entire surface of the substrate 10 so as to fill the space between the first wiring 12 and the thin film circuit chip 14. The insulating film 18 of this example is provided so that the second wiring 22 can be easily formed between a predetermined connection portion of the first wiring 12 and the electrode pad 16 on the thin film circuit chip 14. . If attention is paid to such a function, the object of the present invention can be achieved if the insulating film 18 is provided only at least in a region where the second wiring 22 is to be formed. By providing, the formation of the insulating film 18 becomes easier. The insulating film 18 in this example is formed using a resin material (organic polymer material) such as polyimide.

凹凸領域２０は、第１配線１２の所定の接続対象箇所とこれに対応する電極パッド１６とを結ぶ所定経路（第２配線２２の形成対象領域）に沿って、絶縁膜１８の表面に設けらるものである。この凹凸領域２０は、詳細を後述するように第２配線２２の形成を容易にすることを主たる機能として設けられるものである。   The uneven region 20 is provided on the surface of the insulating film 18 along a predetermined path (region where the second wiring 22 is to be formed) that connects a predetermined connection target portion of the first wiring 12 and the corresponding electrode pad 16. Is. The uneven region 20 is provided as a main function of facilitating the formation of the second wiring 22 as will be described in detail later.

第２配線２２は、絶縁膜１８の凹凸領域２０上に設けられ、第１配線１２の所定の接続対象箇所と薄膜回路チップ１４の所定の電極パッド１６との間を電気的に接続するものである。本例の第２配線２２は、導電性粒子を含む液体材料を滴下した後に固化させて形成した導電膜を用いて構成されるものである。   The second wiring 22 is provided on the uneven region 20 of the insulating film 18 and electrically connects a predetermined connection target portion of the first wiring 12 and a predetermined electrode pad 16 of the thin film circuit chip 14. is there. The 2nd wiring 22 of this example is comprised using the electrically conductive film formed by dripping the liquid material containing electroconductive particle, and making it solidify.

図３は、凹凸領域２０の好適な形状と、第２配線２２の形成材料たる導電性粒子との関係について説明する図である。凹凸領域２０は、図３に概略的に示すように、凹部分が上部で狭まっているような断面構造を有することが好適である。また、この凹凸領域２０における当該凹凸の差Ｌ１或いはＬ２が少なくとも導電性粒子の径より大きくなるように形成されると更に好適である。これにより、導電性粒子を含む液体材料を用いて第２配線２２を形成する場合に、当該液体材料が凹凸領域２０に留まってそれ以外の領域に広がりにくくする効果（選択性）をより高めることができる。また、導電性粒子が留まりやすくなるアンカー効果が得られ、第２配線２２となる導電膜の密着性をあげることも可能となる。また、凹凸の差Ｌ１及び／又はＬ２は、第２配線２２の線幅の１／５かそれより小さく形成することが好適である。例えば第２配線２２の線幅が５μｍ〜５０μｍ程度であれば、凹凸の差Ｌ１等は１μｍ〜５μｍ程度かそれより小さくするとよい。これにより、第２配線２２の線幅の精度を確保しやすくなる。   FIG. 3 is a diagram for explaining a relationship between a preferable shape of the uneven region 20 and conductive particles as a material for forming the second wiring 22. As shown schematically in FIG. 3, the uneven region 20 preferably has a cross-sectional structure in which the concave portion is narrowed at the top. Further, it is more preferable that the unevenness difference L1 or L2 in the uneven region 20 is at least larger than the diameter of the conductive particles. Thereby, when forming the 2nd wiring 22 using the liquid material containing electroconductive particle, the effect (selectivity) which the said liquid material stays in the uneven | corrugated area | region 20, and does not spread easily to other area | regions is improved more. Can do. In addition, an anchor effect that makes it easier for the conductive particles to stay is obtained, and the adhesion of the conductive film to be the second wiring 22 can be increased. Further, the unevenness difference L1 and / or L2 is preferably formed to be 1/5 of the line width of the second wiring 22 or smaller. For example, if the line width of the second wiring 22 is about 5 μm to 50 μm, the unevenness difference L 1 or the like may be about 1 μm to 5 μm or smaller. Thereby, it becomes easy to ensure the accuracy of the line width of the second wiring 22.

なお、凹凸領域２０の形状は、液体材料に対する選択性やアンカー効果を確保し得るものであれば、上記形状に限定されず他の形状であってもよい。   In addition, the shape of the uneven | corrugated area | region 20 will not be limited to the said shape, as long as the selectivity with respect to a liquid material and an anchor effect can be ensured, Other shapes may be sufficient.

本実施形態の回路基板はこのような構成を有しており、次に当該回路基板を製造する方法の好適な一例について説明する。   The circuit board of the present embodiment has such a configuration, and a preferred example of a method for manufacturing the circuit board will now be described.

図４は、本実施形態の回路基板の製造方法を説明する図（工程図）である。   FIG. 4 is a diagram (process diagram) for explaining the circuit board manufacturing method of the present embodiment.

まず、図４（Ａ）に示すように、薄膜回路チップ１４を電極パッド１６が基板１０と当接しない側（基板１０の上側）へ向かうようにして基板１０の一方面上に配置する。この薄膜回路チップ１４は、例えば上述した文献「特開平１０−１２５９３１号公報」などに開示される公知の薄膜デバイス転写技術を用いて基板１０上に形成することが好適であるが、それ以外の方法によって形成してもよい。   First, as shown in FIG. 4A, the thin film circuit chip 14 is disposed on one surface of the substrate 10 such that the electrode pad 16 faces the side where the electrode pad 16 does not contact the substrate 10 (the upper side of the substrate 10). The thin film circuit chip 14 is preferably formed on the substrate 10 by using a known thin film device transfer technique disclosed in, for example, the above-mentioned document “Japanese Patent Laid-Open No. 10-125931”. It may be formed by a method.

次に、図４（Ｂ）に示すように、基板１０の一方面上に所定のパターンを有するように第１配線１２を形成する。具体的な形成手法としては、公知の印刷法、めっき法、液滴吐出法など種々の手法を採用し得る。スパッタ法等の成膜法とフォトリソグラフィ法等によるパターン形成とを組み合わせてもよい。この場合には、上記の薄膜回路チップ１４の形成工程よりも第１配線１２の形成工程を先に行うのも好適である。   Next, as shown in FIG. 4B, the first wiring 12 is formed so as to have a predetermined pattern on one surface of the substrate 10. As a specific forming method, various methods such as a known printing method, plating method, and droplet discharge method can be adopted. A film forming method such as sputtering may be combined with pattern formation using a photolithography method or the like. In this case, it is also preferable to perform the first wiring 12 forming step before the thin film circuit chip 14 forming step.

次に、図４（Ｃ）に示すように、基板１０の一方面上の略全面に、第１配線１２と薄膜回路チップ１４との間を埋めるように絶縁膜１８を形成する。本実施形態では、絶縁膜１８としてポリイミド膜を形成する。ポリイミド膜は塗布法などによって形成可能である。   Next, as illustrated in FIG. 4C, an insulating film 18 is formed on substantially the entire surface on one side of the substrate 10 so as to fill the space between the first wiring 12 and the thin film circuit chip 14. In the present embodiment, a polyimide film is formed as the insulating film 18. The polyimide film can be formed by a coating method or the like.

次に、図４（Ｄ）に示すように、第１配線１２の所定の接続対象箇所と電極パッド１６とを結ぶ所定経路に対応する絶縁膜１８の表面にレーザ光の照射を行って当該表面近傍に変形を生じさせる（荒らす）ことにより、凹凸領域２０を形成する。本工程におけるレーザ光の照射は、上述した凹凸領域２０として好適な状態が実現されるように照射条件（エネルギーの付与条件）が設定される。絶縁膜１８がポリイミド膜からなる場合には、波長が３６０ｎｍ以下のエキシマレーザや、ＹＡＧレーザの第３高調波（３５５ｎｍ）又は第４高調波（２６６ｎｍ）などを用いるのが好ましい。また、レーザ光の強度や照射時間等については適宜調整すればよい。   Next, as shown in FIG. 4D, the surface of the insulating film 18 corresponding to a predetermined path connecting the predetermined connection target portion of the first wiring 12 and the electrode pad 16 is irradiated with laser light to The uneven region 20 is formed by causing deformation (roughening) in the vicinity. Irradiation conditions (energy application conditions) are set so that the laser light irradiation in this step is suitable for the above-described uneven region 20. When the insulating film 18 is made of a polyimide film, it is preferable to use an excimer laser having a wavelength of 360 nm or less, a third harmonic (355 nm) or a fourth harmonic (266 nm) of a YAG laser. Moreover, what is necessary is just to adjust suitably about the intensity | strength, irradiation time, etc. of a laser beam.

なお、凹凸領域２０の形成はレーザ光の照射以外の方法（例えば電子ビーム照射など）によってもよい。すなわち、絶縁膜１８の表面を所望の凹凸形状に変形させるに足りるエネルギーの付与を行うことが可能であれば、如何なる方法も採用し得る。   The uneven region 20 may be formed by a method other than laser beam irradiation (for example, electron beam irradiation). That is, any method can be adopted as long as it is possible to apply energy sufficient to deform the surface of the insulating film 18 into a desired uneven shape.

次に、図４（Ｅ）に示すように、絶縁膜１８の凹凸領域２０上に液体材料を供給する。上述したように、本実施形態では導電性粒子を含む液体材料を用いる。導電性粒子は、金属球、樹脂球に金属皮膜を施したものなど種々のものを採用し得る。金属ナノペースト等と称される超微粒子を用いるのも好適である。また、液体材料の供給は、液滴吐出法（いわゆるインクジェット法）によって行うことが好適である。これにより、液体材料の滴下量を高精度に制御することが可能となる。   Next, as illustrated in FIG. 4E, a liquid material is supplied onto the uneven region 20 of the insulating film 18. As described above, in the present embodiment, a liquid material containing conductive particles is used. As the conductive particles, various kinds of particles such as metal spheres and resin spheres coated with a metal film can be adopted. It is also preferable to use ultrafine particles called metal nanopaste. The liquid material is preferably supplied by a droplet discharge method (so-called inkjet method). Thereby, it becomes possible to control the dripping amount of the liquid material with high accuracy.

次に、図４（Ｆ）に示すように、凹凸領域２０上に供給された液体材料を乾燥、固化させることにより、第１配線１２の所定の接続対象箇所とこれに対応付けられた電極パッド１６とを電気的に接続する第２配線２２が形成される。   Next, as shown in FIG. 4F, the liquid material supplied on the uneven region 20 is dried and solidified, whereby a predetermined connection target portion of the first wiring 12 and an electrode pad associated therewith. A second wiring 22 that electrically connects 16 is formed.

このように、本実施形態によれば、薄膜回路チップ１４に圧力をかけることなく薄膜回路チップ１４と基板１０側の第１配線１２とを電気的に接続することが可能となる。したがって、薄膜回路チップに圧力による損傷が生じることがなく、薄膜回路チップと配線基板との良好な接続状態を容易に確保することが可能となる。   Thus, according to the present embodiment, the thin film circuit chip 14 and the first wiring 12 on the substrate 10 side can be electrically connected without applying pressure to the thin film circuit chip 14. Therefore, the thin film circuit chip is not damaged by pressure, and a good connection state between the thin film circuit chip and the wiring board can be easily ensured.

本実施形態にかかる回路基板は、有機ＥＬ表示装置、液晶表示装置、電気泳動表示装置など種々の電気光学装置（表示装置）、或いはその他各種の装置に適用することが可能である。本実施形態の回路基板を用いて構成される有機ＥＬ表示装置の構成例について以下に説明する。   The circuit board according to the present embodiment can be applied to various electro-optical devices (display devices) such as an organic EL display device, a liquid crystal display device, and an electrophoretic display device, or other various devices. A configuration example of an organic EL display device configured using the circuit board of the present embodiment will be described below.

図５は、本実施形態にかかる回路基板を用いた有機ＥＬ表示装置の構成例を示す図（断面図）である。図５に示す有機ＥＬ表示装置は、本実施形態にかかる回路基板１００と、有機ＥＬ素子１１１を備える表示素子基板１１０とを対向配置し、両者間を銀ペースト等の導電性部材１０３により電気的に接続して構成されている。回路基板１００と表示素子基板１１０との相互間には、不活性ガスなどが適宜充填される。この有機ＥＬ表示装置では、回路基板１００側の薄膜回路チップ１０２によって、表示素子基板１１０側の有機ＥＬ素子１１１を駆動している。有機ＥＬ表示素子１１１は、陽極１１２と陰極１１３との間に発光層１１４を介在させてなり、陰極１１３が配線１０１及び導電性部材１０３を介して薄膜回路チップ１０２と電気的に接続されている。例えば、図示の有機ＥＬ素子１１１が３つ１組となって一画素を構成しており、この１画素分に対応する画素駆動回路が１つの薄膜回路チップ１０２に含まれている。そして、回路基板１００上の配線１０１と薄膜回路チップ１０２の上面の電極パッド１０５との間が本実施形態にかかる第２配線１０６によって電気的に接続されている。   FIG. 5 is a diagram (sectional view) showing a configuration example of the organic EL display device using the circuit board according to the present embodiment. In the organic EL display device shown in FIG. 5, the circuit board 100 according to the present embodiment and the display element substrate 110 including the organic EL element 111 are arranged to face each other, and a conductive member 103 such as a silver paste is used between the two. Connected to and configured. An inert gas or the like is appropriately filled between the circuit board 100 and the display element substrate 110. In this organic EL display device, the organic EL element 111 on the display element substrate 110 side is driven by the thin film circuit chip 102 on the circuit board 100 side. In the organic EL display element 111, a light emitting layer 114 is interposed between an anode 112 and a cathode 113, and the cathode 113 is electrically connected to the thin film circuit chip 102 via a wiring 101 and a conductive member 103. . For example, a set of three organic EL elements 111 shown in the figure forms one pixel, and a pixel driving circuit corresponding to one pixel is included in one thin film circuit chip 102. The wiring 101 on the circuit board 100 and the electrode pad 105 on the upper surface of the thin film circuit chip 102 are electrically connected by the second wiring 106 according to this embodiment.

図６は、上述した電気光学装置を含んで構成される電子機器の具体例を説明する図である。図６（Ａ）は携帯電話への適用例であり、当該携帯電話２３０はアンテナ部２３１、音声出力部２３２、音声入力部２３３、操作部２３４、および本発明の電気光学装置１００を備えている。このように本発明に係る電気光学装置は表示部として利用可能である。図６（Ｂ）はビデオカメラへの適用例であり、当該ビデオカメラ２４０は受像部２４１、操作部２４２、音声入力部２４３、および本発明の電気光学装置１００を備えている。図６（Ｃ）はテレビジョンへの適用例であり、当該テレビジョン３００は本発明の電気光学装置１００を備えている。なお、パーソナルコンピュータ等に用いられるモニタ装置に対しても同様に本発明に係る電気光学装置を適用し得る。図６（Ｄ）はロールアップ式テレビジョンへの適用例であり、当該ロールアップ式テレビジョン３１０は本発明の電気光学装置１００を備えている。また、電子機器はこれらに限定されず、表示機能を有する各種の電子機器に適用可能である。例えばこれらの他に、表示機能付きファックス装置、デジタルカメラのファインダ、携帯型ＴＶ、電子手帳、電光掲示盤、宣伝公告用ディスプレイなども含まれる。なお、本発明にかかる回路基板は、電気光学装置の構成部品として上記のような電子機器に含まれる場合の他に、単独で電子機器の構成部品としても適用し得る。   FIG. 6 is a diagram illustrating a specific example of an electronic apparatus including the electro-optical device described above. FIG. 6A shows an application example to a mobile phone, and the mobile phone 230 includes an antenna portion 231, an audio output portion 232, an audio input portion 233, an operation portion 234, and the electro-optical device 100 of the present invention. . As described above, the electro-optical device according to the invention can be used as a display unit. FIG. 6B shows an application example to a video camera. The video camera 240 includes an image receiving unit 241, an operation unit 242, an audio input unit 243, and the electro-optical device 100 of the present invention. FIG. 6C shows an application example to a television, and the television 300 includes the electro-optical device 100 of the present invention. The electro-optical device according to the present invention can be similarly applied to a monitor device used for a personal computer or the like. FIG. 6D shows an application example to a roll-up television, and the roll-up television 310 includes the electro-optical device 100 of the present invention. Further, the electronic device is not limited to these, and can be applied to various electronic devices having a display function. For example, in addition to these, a fax machine with a display function, a finder for a digital camera, a portable TV, an electronic notebook, an electric bulletin board, a display for advertising, etc. are also included. The circuit board according to the present invention can be applied alone as a component part of an electronic device, in addition to the case where it is included in the electronic device as described above as a component part of an electro-optical device.

なお、本発明は上述した実施形態の内容に限定されることなく、本発明の要旨の範囲内で種々に変形実施が可能である。   The present invention is not limited to the contents of the above-described embodiments, and various modifications can be made within the scope of the gist of the present invention.

上述した実施形態では、ポリイミド等の樹脂材料からなる絶縁膜を用いていたが、当該絶縁膜を二酸化シリコン（ＳｉＯ2）やシリコン窒化物（Ｓｉ3Ｎ4）等の無機材料によって構成してもよい。この場合には、凹凸領域の形成に用いるレーザ光として、ＣＯ2レーザ（波長１０６０ｎｍ）やＹＡＧレーザ（波長１０６４ｎｍ）などを用いることが好適である。 In the embodiment described above, an insulating film made of a resin material such as polyimide is used. However, the insulating film may be made of an inorganic material such as silicon dioxide (SiO 2 ) or silicon nitride (Si 3 N 4 ). Good. In this case, a CO 2 laser (wavelength 1060 nm), a YAG laser (wavelength 1064 nm), or the like is preferably used as the laser light used for forming the uneven region.

また、上述した導電性粒子を含む液体材料によって第２配線を形成していたが、導電性高分子を液状にしたもの等を用いることも可能である。   In addition, the second wiring is formed using the liquid material containing the conductive particles described above, but it is also possible to use a liquid made of a conductive polymer.

一実施形態の回路基板の構造を説明する図である。It is a figure explaining the structure of the circuit board of one Embodiment. 図１に示すＩＩ−ＩＩ線断面における断面構造を説明する図である。It is a figure explaining the cross-section in the II-II line cross section shown in FIG. 凹凸領域の好適な形状と、第２配線の形成材料たる導電性粒子との関係について説明する図である。It is a figure explaining the relationship between the suitable shape of an uneven | corrugated area | region, and the electroconductive particle which is a formation material of 2nd wiring. 回路基板の製造方法を説明する図（工程図）である。It is a figure (process drawing) explaining the manufacturing method of a circuit board. 回路基板を用いた有機ＥＬ表示装置の構成例を示す図である。It is a figure which shows the structural example of the organic electroluminescent display apparatus using a circuit board. 電気光学装置を適用可能な電子機器の例を示す図である。It is a figure which shows the example of the electronic device which can apply an electro-optical apparatus.

符号の説明Explanation of symbols

１０…基板、 １２…第１配線、 １４…薄膜回路チップ、 １６…電極パッド（接続端子）、 １８…絶縁膜、 ２０…凹凸領域、２２…第２配線   DESCRIPTION OF SYMBOLS 10 ... Board | substrate, 12 ... 1st wiring, 14 ... Thin film circuit chip, 16 ... Electrode pad (connection terminal), 18 ... Insulating film, 20 ... Uneven area | region, 22 ... 2nd wiring

Claims (12)

配線を有する基板上に薄膜回路チップを配置して構成される回路基板の製造方法であって、
薄膜回路を含み、当該薄膜回路と外部との電気的な接続を担う接続端子が一方面に設けられた薄膜回路チップを、前記接続端子を基板と当接しない側へ向けて当該基板の一方面上に配置する第１工程と、
前記基板の一方面上に第１配線を形成する第２工程と、
前記基板の一方面上に、少なくとも前記第１配線の所定の接続対象箇所と前記薄膜回路チップとの間を埋めるように絶縁膜を形成する第３工程と、
前記接続対象箇所と前記接続端子とを結ぶ所定経路に対応する前記絶縁膜の表面にエネルギーを与えて凹凸領域を形成する第４工程と、
前記絶縁膜の前記凹凸領域上に液体材料を供給する第５工程と、
供給された前記液体材料を固化させることにより、前記接続対象箇所と前記接続端子とを電気的に接続する第２配線を形成する第６工程と、
を含む、回路基板の製造方法。 A method of manufacturing a circuit board configured by arranging a thin film circuit chip on a substrate having wiring,
A thin film circuit chip including a thin film circuit and provided with a connection terminal on one side for electrical connection between the thin film circuit and the outside is arranged on one side of the substrate with the connection terminal facing away from the substrate. A first step to be disposed on;
A second step of forming a first wiring on one side of the substrate;
A third step of forming an insulating film on one surface of the substrate so as to fill at least a portion between the predetermined connection target portion of the first wiring and the thin film circuit chip;
A fourth step of forming an uneven region by applying energy to the surface of the insulating film corresponding to a predetermined path connecting the connection target portion and the connection terminal;
A fifth step of supplying a liquid material onto the uneven region of the insulating film;
A sixth step of forming a second wiring that electrically connects the connection target portion and the connection terminal by solidifying the supplied liquid material;
A method for manufacturing a circuit board, comprising: 前記第３工程は、前記絶縁膜を前記基板の一方面上の略全体に形成する、請求項１に記載の回路基板の製造方法。   2. The method of manufacturing a circuit board according to claim 1, wherein in the third step, the insulating film is formed on substantially the entire surface of the one surface of the substrate. 前記第４工程は、レーザ光の照射によって前記エネルギーの付与を行う、請求項１に記載の回路基板の製造方法。   The circuit board manufacturing method according to claim 1, wherein in the fourth step, the energy is applied by laser light irradiation. 前記第５工程における前記液体材料が導電性粒子を含む、請求項１に記載の回路基板の製造方法。   The method for manufacturing a circuit board according to claim 1, wherein the liquid material in the fifth step includes conductive particles. 前記第４工程は、前記凹凸領域の当該凹凸の差が少なくとも前記導電性粒子の径より大きくなるように前記エネルギーの付与条件を設定して前記凹凸領域を形成する、請求項４に記載の回路基板の製造方法。   5. The circuit according to claim 4, wherein in the fourth step, the uneven region is formed by setting the energy application condition so that the unevenness difference of the uneven region is at least larger than the diameter of the conductive particles. A method for manufacturing a substrate. 前記第５工程における前記液体材料の供給を液滴吐出法により行う、請求項１に記載の回路基板の製造方法。   The method for manufacturing a circuit board according to claim 1, wherein the liquid material is supplied in the fifth step by a droplet discharge method. 基板と、
前記基板の少なくとも一方面に配置される第１配線と、
薄膜回路を含み、前記基板の一方面上に配置される薄膜回路チップと、
前記薄膜回路チップの前記基板と当接しない側の面に配置され、前記薄膜回路と外部との電気的な接続を担う接続端子と、
前記基板の一方面上に、少なくとも前記第１配線の所定の接続対象箇所と前記薄膜回路チップとの間を埋めるように設けられる絶縁膜と、
前記接続対象箇所と前記接続端子とを結ぶ所定経路に沿って前記絶縁膜の表面に設けられる凹凸領域と、
前記絶縁膜の前記凹凸領域上に設けられ、前記第１配線の前記接続対象箇所と前記薄膜回路チップの前記接続端子とを電気的に接続する第２配線と、
を備える、回路基板。 A substrate,
A first wiring disposed on at least one surface of the substrate;
A thin film circuit chip including a thin film circuit and disposed on one side of the substrate;
A connection terminal disposed on the surface of the thin film circuit chip that does not contact the substrate, and responsible for electrical connection between the thin film circuit and the outside,
An insulating film provided on one surface of the substrate so as to fill at least a portion between the predetermined connection target portion of the first wiring and the thin film circuit chip;
An uneven area provided on the surface of the insulating film along a predetermined path connecting the connection target portion and the connection terminal;
A second wiring that is provided on the uneven region of the insulating film and electrically connects the connection target portion of the first wiring and the connection terminal of the thin film circuit chip;
A circuit board comprising: 前記絶縁膜は、前記基板の一方面上の略全体に設けられる、請求項７に記載の回路基板。   The circuit board according to claim 7, wherein the insulating film is provided on substantially the entire one surface of the substrate. 前記第２配線は、導電性粒子を含む液体材料を滴下した後に固化させて形成されるものであり、
前記凹凸領域は、当該凹凸の差が少なくとも前記導電性粒子の径より大きくなるように形成される、請求項７に記載の回路基板。 The second wiring is formed by solidifying after dropping a liquid material containing conductive particles,
The circuit board according to claim 7, wherein the uneven region is formed such that a difference between the unevenness is at least larger than a diameter of the conductive particles. 前記絶縁膜は、樹脂材料又は無機材料からなる、請求項７に記載の回路基板。   The circuit board according to claim 7, wherein the insulating film is made of a resin material or an inorganic material. 請求項７乃至１０のいずれかに記載の回路基板を含んで構成される電気光学装置。   An electro-optical device configured to include the circuit board according to claim 7. 請求項７乃至１０のいずれかに記載の回路基板を含んで構成される電子機器。

An electronic device comprising the circuit board according to claim 7.

JP2004058991A 2004-03-03 2004-03-03 Circuit board, its manufacturing method, electrooptical device, and electronic apparatus Pending JP2005251910A (en)

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