JP4619035B2 - ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法 - Google Patents

ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法 Download PDF

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Publication number
JP4619035B2
JP4619035B2 JP2004129438A JP2004129438A JP4619035B2 JP 4619035 B2 JP4619035 B2 JP 4619035B2 JP 2004129438 A JP2004129438 A JP 2004129438A JP 2004129438 A JP2004129438 A JP 2004129438A JP 4619035 B2 JP4619035 B2 JP 4619035B2
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Prior art keywords
optical waveguide
laser
beam spot
cylindrical lens
side direction
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Expired - Fee Related
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JP2004129438A
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Japanese (ja)
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JP2005129889A (ja
JP2005129889A5 (enExample
Inventor
幸一郎 田中
智昭 森若
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2005129889A5 publication Critical patent/JP2005129889A5/ja
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  • Liquid Crystal (AREA)
  • Microscoopes, Condenser (AREA)
  • Recrystallisation Techniques (AREA)
JP2004129438A 2003-04-24 2004-04-26 ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法 Expired - Fee Related JP4619035B2 (ja)

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JP2004129438A JP4619035B2 (ja) 2003-04-24 2004-04-26 ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003120782 2003-04-24
JP2003342803 2003-10-01
JP2004129438A JP4619035B2 (ja) 2003-04-24 2004-04-26 ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法

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JP2005129889A JP2005129889A (ja) 2005-05-19
JP2005129889A5 JP2005129889A5 (enExample) 2007-06-14
JP4619035B2 true JP4619035B2 (ja) 2011-01-26

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JP2004129438A Expired - Fee Related JP4619035B2 (ja) 2003-04-24 2004-04-26 ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4670876B2 (ja) * 2008-02-14 2011-04-13 三菱電機株式会社 照明光学系および画像表示装置
JP2011128634A (ja) * 2011-01-19 2011-06-30 Mitsubishi Electric Corp 照明光学系および画像表示装置
JP5884272B2 (ja) * 2011-02-18 2016-03-15 株式会社リコー 薄膜製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727993A (ja) * 1993-07-07 1995-01-31 Matsushita Electric Ind Co Ltd 光ビーム均一化光学系
DE19520187C1 (de) * 1995-06-01 1996-09-12 Microlas Lasersystem Gmbh Optik zum Herstellen einer scharfen Beleuchtungslinie aus einem Laserstrahl
JP3917231B2 (ja) * 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JPH09234579A (ja) * 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JPH11212021A (ja) * 1998-01-27 1999-08-06 Toshiba Corp レーザ光照射装置
JP3562389B2 (ja) * 1999-06-25 2004-09-08 三菱電機株式会社 レーザ熱処理装置
JP2002141302A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置

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JP2005129889A (ja) 2005-05-19

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