JP4611341B2 - Plating method and apparatus - Google Patents

Description

  The present invention relates to a plating method and apparatus for performing a plating process on an object to be plated, and more particularly to a wiring groove or plug of a substrate to be plated on which a fine opening for a semiconductor wafer or the like, a resist opening is formed, and a resist opening. The present invention relates to a plating method and apparatus suitable for forming a plating film on a part.

FIG. 1 is a diagram showing a configuration example of this type of conventional plating apparatus. As shown in the figure, the plating apparatus includes a plating tank 100, and the plating tank 100 includes a tank body 101 and a collection tank 102 for collecting the plating solution Q ₂ overflowed from the tank body 101. The plating solution Q ₂ collected in the collection tank 102 is sent to the temperature regulator 104 by the liquid feed pump 103, adjusted to a predetermined temperature suitable for plating by the temperature regulator 104, and particles and the like are further filtered by the filtration filter 105. It is removed and supplied to the tank body 101. Reference numeral 106 denotes a flow meter for measuring the circulating flow rate of the plating solution.

In the plating apparatus having the above configuration, the substrate W to be plated such as a semiconductor wafer held by the substrate holder 108 in the bath body 101 of the plating bath 100 and the anode electrode 107 are arranged to face each other, and the substrate W to be plated and the anode Plating is performed by passing a plating current from the plating power source 109 between the electrodes 107. In the case of electroless plating, plating is performed by immersing the substrate W to be plated held in the substrate holder 108 in the plating solution Q ₂ without arranging the plating power source 109 and the anode electrode 107.

  In the plating of the substrate to be plated W, when a plating film is formed in a fine wiring groove or plug provided on the substrate to be plated W or an opening of a resist having poor wettability, a plating solution or a pretreatment solution is used. There is a problem in that air bubbles remain in the opening of the wiring groove, plug, or resist without entering the fine wiring groove, plug, or resist opening, resulting in lack of plating or plating loss. It was.

  Conventionally, in order to prevent this lack of plating and plating omission, a surface active agent is added to the plating solution to lower the surface tension of the plating solution, thereby reducing the fine wiring grooves, plugs, and resist openings on the substrate to be plated. The infiltration of the plating solution was attempted. However, there is a problem that bubbles are easily generated on the liquid surface during circulation of the plating solution due to a decrease in surface tension. In addition, by adding a new surfactant to the plating solution, there is a problem that abnormalities occur in the plating deposition, organic substances are taken into the plating film, and the characteristics of the plating film may be adversely affected.

  The present invention has been made in view of the above points, and without adding a surfactant to the plating solution, the plating solution can be infiltrated into fine grooves and holes formed in the substrate to be plated. An object of the present invention is to provide a plating method and apparatus capable of performing high-quality plating without occurrence of plating omission.

In order to solve the above-mentioned problems, the plating method of the present invention is based on the electroplating or electroless process after pretreatment using a pretreatment liquid on a substrate to be plated on which fine grooves or holes or resist openings are formed on the substrate surface. This is a plating method for plating, which collects the pretreatment liquid overflowed from the opening of the pretreatment tank holding the pretreatment liquid , degassed the dissolved gas in the collected pretreatment liquid , and deaerated. The pretreatment liquid is returned to the pretreatment tank, and the substrate to be plated is immersed in the degassed pretreatment liquid in the pretreatment tank to degas fine grooves and holes on the substrate surface or bubbles in the resist opening, Thereafter, the substrate to be plated is plated.

One embodiment of the present invention is characterized in that pure water is used as the pretreatment liquid.
In one embodiment of the present invention, a substrate to be plated in which a pretreatment liquid has entered the fine grooves, holes, or resist openings is immersed in the plating solution, and the pretreatment liquid and the plating solution intruded into the substrate to be plated are replaced. Then, plating is performed after the fine groove or hole or the resist opening is filled with a plating solution.

The plating apparatus of the present invention is a plating apparatus for performing electroplating or electroless plating after pretreatment of a substrate to be plated using a pretreatment solution, and holds a pretreatment solution for immersing the substrate to be plated. a pretreatment tank having an opening portion for overflow is possible, and the pretreatment liquid to a collecting tank for collecting the pretreatment liquid overflowed from the opening of the pre-treatment tank, the collection tank A degassing device for degassing the dissolved gas in the pretreatment liquid collected in step 1, a liquid feed pump for supplying the pretreatment liquid to the pretreatment tank, and electroplating of the substrate to be plated using the plating liquid or characterized in that example Bei a plating tank for performing an electroless plating.
One embodiment of the present invention is characterized in that the degassing device includes at least a degassing membrane module having a degassing membrane and a vacuum pump.
In one embodiment of the present invention, a dissolved oxygen concentration sensor that detects the dissolved oxygen concentration of the pretreatment liquid is provided, and a control device that controls the pressure of the degassing device is provided, and the control device controls the pressure of the vacuum exhaust system. The dissolved oxygen concentration of the pretreatment liquid can be adjusted.

One aspect of the present invention includes a first pretreatment liquid circulation path for circulating a pretreatment liquid from the pretreatment tank through the pretreatment liquid circulation tank to the pretreatment tank, and the pretreatment liquid circulation tank includes it characterized by providing the degassing unit.
One aspect of the present invention includes a first pretreatment liquid circulation path that circulates a pretreatment liquid from the pretreatment tank to the pretreatment tank via a pretreatment liquid circulation tank, and the first pretreatment liquid. A second pretreatment liquid circulation path for circulating the pretreatment liquid in the pretreatment liquid circulation tank is provided separately from the circulation path, and the degassing device is provided in the second pretreatment liquid circulation path. To do.

In one aspect of the present invention, the degassing device is provided in the pretreatment liquid circulation path for circulating the pretreatment liquid in the pretreatment tank, and a bypass pipe is provided to bypass the degassing device. It is characterized by controlling the flowing flow rate.

  After degassing the plating solution as described above, or by performing plating while degassing, bubbles in fine wiring grooves and plugs formed in the object to be plated, and openings in the resist are removed from the degassing solution. The plating solution penetrates into fine grooves and holes such as fine wiring grooves and plugs, resist openings, etc., so that plating can be performed without occurrence of lack of plating or omission of plating. . Furthermore, since the dissolved gas in the circulating plating solution is removed, the solution reaction of the plating solution by the dissolved gas is prevented, and side reactions and deterioration of the plating solution can be suppressed, and a stable plating environment can be obtained. .

  By degassing the pretreatment liquid as described above, when the object to be plated is immersed in the pretreatment liquid, the bubbles in the fine grooves and holes formed in the object to be plated are the pretreatment liquid. The pretreatment liquid dissolves in the liquid and penetrates into fine grooves and holes. Then, by immersing the object to be plated in the plating solution, the pretreatment liquid and the plating solution that have entered the fine grooves or holes of the object to be plated are replaced, and the plating solution enters the inside of the fine grooves or holes. Therefore, it is possible to perform plating without occurrence of lack of plating or lack of plating.

  In addition, it is preferable to perform plating while controlling the concentration of one or both dissolved gases in the plating solution or the pretreatment solution to be between 4 ppm and 1 ppb. As described above, stable plating can be performed by monitoring the dissolved gas concentration of the pretreatment liquid passing through the pretreatment liquid circulation system and the plating liquid passing through the plating liquid circulation system and managing the amount of dissolved gas.

  According to the present invention, without adding a surfactant to the plating solution, the plating solution can be infiltrated into fine grooves and holes formed in the substrate to be plated, and there is no occurrence of plating chipping or plating omission. Can be plated.

  Embodiments of the present invention will be described below with reference to the drawings. In the present embodiment, as an object to be plated, a substrate to be plated such as a semiconductor wafer will be described as an example. However, the plated object is not limited thereto, and fine grooves and holes are formed on the plating surface, It can also be used as a plating apparatus for plating grooves and holes. 2 to 11 are diagrams showing a configuration example of the plating apparatus according to the first embodiment of the present invention.

As shown in FIG. 2, the plating apparatus includes a plating tank 30 that contains a plating solution Q ₂ . The plating tank 30 includes a tank body 31 and a collection tank 32 for collecting the plating solution Q ₂ overflowed from the tank body 31. The plating solution Q ₂ collected in the collection tank 32 is sent to a temperature regulator 34 by a liquid feed pump 33, adjusted to a predetermined temperature (a predetermined temperature suitable for plating) by the temperature regulator 34, and a filtration filter 35. Thus, contaminants such as particles are removed, and the gas dissolved in the plating solution Q ₂ is removed through the degassing membrane module 38 and supplied to the tank body 31.

Here, the liquid feed pump 33, the temperature regulator 34, the filtration filter 35, and the degassing membrane module 38 constitute a plating solution circulation path for circulating the plating solution. The degassing membrane module 38 and the vacuum pump 39 constitute a degassing device that removes dissolved gas in the plating solution Q ₂ passing through the plating solution circulation path. Reference numeral 40 denotes a plating solution dissolved oxygen concentration sensor for measuring the dissolved oxygen concentration of the plating solution Q ₂ passing through the plating solution circulation path, and reference numeral 37 denotes a flow meter for measuring the flow rate of the plating solution Q ₂ .

In the plating apparatus having the above configuration, the substrate W to be plated such as a semiconductor wafer held by the substrate holder 15 and the anode electrode 36 are disposed opposite to each other in the plating solution Q ₂ of the tank body 31, and the plating power source 42 By plating a current between the plating substrate W and the anode electrode 36, the substrate W to be plated is plated. Here, since the plating solution Q ₂ is deaerated by a deaeration device comprising a deaeration membrane module 38 and a vacuum pump 39, fine wiring grooves, plugs, and resists formed on the substrate W to be plated are used. Air bubbles in the opening dissolve in the degassed plating solution Q ₂ and the plating solution penetrates into fine wiring grooves, plugs, and resist openings, so that there is no occurrence of chipping or omission of plating.

As described above, a degassing device is provided in the plating solution circulation path of the plating tank 30, and the plating solution Q ₂ that overflows the tank body 31 and collects in the collection tank 32 is passed through the degassing membrane module 38. dissolved gas Q ₂ is removed. As a result, the dissolved oxygen in the plating solution Q ₂ is removed, and the reaction of the plating solution due to the dissolved oxygen can be prevented, and side reactions and deterioration of the plating solution can be suppressed and a stable plating environment can be obtained.

In the above example, plating is performed while degassing the plating solution Q ₂ passing through the plating solution circulation path. However, the dissolved oxygen concentration of the plating solution passing through the plating solution circulation path is determined by the output of the plating solution dissolved oxygen concentration sensor 40. While monitoring, when the dissolved oxygen concentration reaches a predetermined value (for example, 4 ppm or less), the substrate W to be plated held in the substrate holder 15 is immersed in the plating solution Q ₂ to perform plating. May be. That is, the plating solution Q ₂ accommodated in the plating tank is degassed, and the plating may be performed after the dissolved gas concentration becomes a predetermined value or less.

In the plating apparatus shown in FIG. 2, the plating liquid Q ₂ for electrolytic plating is supplied to the tank body 31 of the plating tank 30 to perform electrolytic plating. However, the anode electrode 36 and the plating power source 42 are removed, and the tank is removed. Electroless plating may be performed by supplying a plating solution Q ₂ for electroless plating to the main body 31 and immersing the substrate W to be plated held by the substrate holder 15.

FIG. 3 is a diagram showing another configuration example of the plating apparatus according to the present invention. As shown in FIG. 3, the present plating apparatus includes a pretreatment tank 10 and a plating tank 30. The pretreatment tank 10 includes a tank body 11 and a collection tank 12 for collecting the pretreatment liquid Q ₁ overflowed from the tank body 11. The pretreatment liquid from the pretreatment liquid source 17 is sent by the liquid feed pump 16 to the degassing membrane module 13 of the degassing apparatus constituted by the vacuum pump 14 and the degassing membrane module 13. The pretreatment liquid Q ₁ sent into the degassing membrane module 13 is degassed by the dissolved gas therein, and supplied to the tank body 11 as a degassing liquid.

The plating tank 30 includes a tank body 31 and a collection tank 32 for collecting the plating solution Q ₂ overflowed from the tank body 31. The plating solution Q ₂ collected in the collection tank 32 is sent to a temperature regulator 34 by a liquid feed pump 33, adjusted to a predetermined temperature by the temperature regulator 34, and particles and the like are further removed by a filtration filter 35. It is supplied to the main body 31.

In the substrate plating apparatus having the above-described configuration, when a substrate to be plated W such as a semiconductor wafer held by the substrate holder 15 is immersed in the pretreatment liquid Q ₁ , fine wiring grooves, plugs, and resist openings on the surface thereof. The pretreatment liquid Q ₁ enters the area, and the bubbles in the fine wiring grooves, plugs, and resist openings dissolve in the pretreatment liquid, which is a deaeration liquid, and the pretreatment liquid becomes fine wiring grooves. It penetrates into the openings of plugs and resists.

Pretreatment is performed as described above, and the substrate W to be plated in which the pretreatment liquid has entered into the fine wiring grooves, plugs, and resist openings is plated in the bath body 31 of the plating bath 30 for each substrate holder 15. When immersed in Q ₂ , the pretreatment liquid Q ₁ and the plating solution Q ₂ that have entered the fine wiring grooves, plugs, and resist openings are replaced with the fine wiring grooves, plugs, and resist openings. inside it is filled with the plating solution Q _2.

In this state, by applying a predetermined plating voltage from the plating power source 42 between the substrate holder 15 and the anode electrode 36, a plating current flows from the anode electrode 36 to the substrate to be plated W serving as the cathode, and plating is performed on the substrate to be plated. A film is formed. At this time, since the plating solution Q ₂ enters and fills in the fine wiring grooves, plugs, and resist openings of the substrate W to be plated, the plating is performed without occurrence of plating chipping or plating omission.

As described above, by immersing the object to be plated wafer W having the pre-treatment in the plating solution Q ₂ of the tank body 31 of the plating tank 30, it will be the pretreatment liquid Q ₁ is brought into the plating solution Q ₂ By using pure water as the pretreatment liquid Q _1, there is no adverse effect on the plating liquid Q ₂ .

In the plating apparatus shown in FIG. 3, the substrate to be plated W held by the substrate holder 15 and the anode electrode 36 are arranged oppositely in the plating solution Q ₂ of the tank body 31 of the plating tank 30 to perform electrolytic plating. However, the anode electrode 36 and the plating power source 42 are removed, and a plating solution Q ₂ for electroless plating is supplied into the tank body 31, and the plating target held by the substrate holder 15 in the plating solution Q _2. Electroless plating may be performed by immersing the substrate W.

FIG. 4 is a diagram showing another configuration example of the plating apparatus according to the present invention. As shown in FIG. 4, the present plating apparatus has a plating solution circulation path having a degassing device comprising a liquid feed pump 33, a temperature regulator 34, a filtration filter 35, a degassing membrane module 38 and a vacuum pump 39 in the plating tank 30. It has. That is, the same plating tank 30 and plating solution circulation path as the configuration shown in FIG. 2 are provided. Reference numeral 40 denotes a plating solution dissolved oxygen concentration sensor for detecting the dissolved oxygen concentration of the plating solution Q _{2 in} the plating solution circulation path.

By also degassed plating solution Q ₂ supplies the plating tank 30 as described above, when immersed to be plated substrate W pretreated with pretreatment tank 10 to the plating solution Q _2, to be plated as described above Substitution of the pretreatment liquid Q ₁ and the plating solution Q ₂ entering the fine wiring grooves, plugs, and resist openings of the substrate W occurs, but the plating solution is also evacuated, so that the plating solution enters. Accordingly, the air does not enter the openings of the wiring grooves, plugs, and resists, and plating without chipping or plating omission can be performed.

The plating apparatus shown in FIG. 4 performs electrolytic plating. However, the anode electrode 36 and the plating power source 42 are removed, and a plating solution Q ₂ for electroless plating is supplied into the tank body 31 so as to be electroless. Plating may be performed.

  FIG. 5 is a diagram showing another configuration example of the plating apparatus according to the present invention. As shown in FIG. 5, the present plating apparatus also includes a pretreatment liquid having a degassing device comprising a liquid feed pump 16, a temperature regulator 18, a filtration filter 19, a degassing membrane module 13 and a vacuum pump 14 in the pretreatment tank 10. A circulation path is provided. In FIG. 5, reference numeral 22 is a flow meter for measuring the flow rate of the pretreatment liquid passing through the pretreatment liquid circulation path, and reference numeral 20 is the front end provided at the outlet of the filtration filter 19 in the pretreatment liquid circulation path. It is a pretreatment liquid dissolved oxygen concentration sensor which detects the dissolved oxygen concentration of the pretreatment liquid passing through the treatment liquid circulation path.

As described above, by providing the degassing device including the degassing membrane module 13 and the vacuum pump 14 in the pretreatment liquid circulation path of the pretreatment tank 10, the pretreatment that overflows the tank body 11 and collects in the collection tank 12. Bubbles are mixed in the liquid Q ₁ , but the bubbles are removed by passing through the degassing membrane module 13, and the degassed pretreatment liquid Q ₁ is supplied into the tank body 11. Accordingly, when the substrate to be plated W held by the substrate holder 15 is immersed in the pretreatment liquid Q ₁ in the tank body 11, bubbles in fine wiring grooves, plugs, and resist openings are degassed liquid. When dissolved in a certain pretreatment liquid, the pretreatment liquid penetrates into fine wiring grooves, plugs, and resist openings.

Further, when the substrate W to be plated immersed in the pretreated liquid Q ₁ deaerated in the pretreatment tank 10 is immersed in the degassed plating liquid Q ₂ in the plating tank 30, fine wiring of the substrate W to be plated is performed. The pretreatment liquid Q ₁ entering the opening of the groove, plug, or resist is replaced with the degassed plating liquid Q ₂ , and the wiring groove, plug, or resist opening is accompanied by the penetration of the plating liquid. Air bubbles do not enter the inside of the part, and plating without missing plating or missing plating can be performed.

In the substrate plating apparatus having the above configuration, the dissolved oxygen concentrations of the pretreatment liquid Q ₁ and the plating liquid Q ₂ are monitored from the outputs of the pretreatment liquid dissolved oxygen concentration sensor 20 and the plating liquid dissolved oxygen concentration sensor 40, The amount of dissolved gas in these liquids is controlled. That is, when the dissolved oxygen concentration of the pretreatment liquid Q ₁ is high from the output of the pretreatment liquid dissolved oxygen concentration sensor 20, the vacuum pump 14 is controlled to increase the degree of vacuum of the degassing membrane module 13 and the pretreatment liquid Q _1. Keep dissolved oxygen concentration low. When the concentration of the plating solution Q ₂ is high from the output of the plating solution dissolved oxygen concentration sensor 40, the vacuum pump 39 is controlled to increase the degree of vacuum of the degassing membrane module 38, and the dissolved oxygen concentration of the plating solution Q ₂ is increased. Keep it low. Thereby, the amount of dissolved gas in the pretreatment liquid Q ₁ and the plating liquid Q ₂ can be controlled, and stable plating can be performed.

In the plating apparatus shown in FIG. 5, the electrolytic plating is performed in the tank body 31 of the plating tank 30, but the anode electrode 36 and the plating power source 42 are removed, and the plating liquid Q for electroless plating is applied to the tank body 31. ₂ may be supplied to perform electroless plating. In the above example, the degassing device including the degassing membrane module and the vacuum pump is provided in both the pretreatment liquid circulation path and the plating liquid circulation path. However, the degassing apparatus may be provided in only one of them. Further, here, dissolved oxygen concentration sensors are provided in both liquid circulation paths, and the dissolved oxygen concentrations of both the pretreatment liquid Q ₁ and the plating liquid Q ₂ are monitored, and the dissolved gas amounts of both are managed. Only the management of the dissolved gas amount of either one may be used.

  FIG. 6 is a diagram showing another configuration example of the plating apparatus according to the present invention. As shown in FIG. 6, the present plating apparatus is provided with a control device 23 for controlling the vacuum pump 14 of the deaeration device of the pretreatment tank 10, and the output of the pretreatment liquid dissolved oxygen concentration sensor 20 is input to the control device 23. is doing. In addition, a control device 41 for controlling the vacuum pump 39 of the deaerator of the plating tank 30 is provided, and the output of the plating solution dissolved oxygen concentration sensor 40 is input to the control device 41.

Each of the control devices 23 and 41 includes a computer, and is a vacuum pump so that the dissolved oxygen concentration of the pretreatment liquid in the pretreatment liquid circulation path and the dissolved oxygen concentration of the plating liquid in the plating liquid circulation path are maintained at predetermined values. 14 and 39 are controlled. That is, the pressure in the evacuation line of the degassing membrane modules 13 and 38 is controlled to maintain the dissolved oxygen concentration in the pretreatment liquid Q ₁ and the dissolved oxygen concentration in the plating solution at predetermined values. Thereby, the amount of dissolved gas in the pretreatment liquid Q ₁ and the plating liquid Q ₂ can be automatically managed, and stable plating can always be performed.

In the plating apparatus shown in FIG. 6, the electrolytic plating is performed in the tank body 31 of the plating tank 30, but the anode electrode 36 and the plating power source 42 are removed, and the plating liquid Q for electroless plating is applied to the tank body 31. ₂ may be supplied to perform electroless plating. In the above example, the dissolved gas in both the pretreatment liquid in the pretreatment liquid circulation path and the plating liquid in the plating liquid circulation path is automatically managed, but both of them are managed by automatic management of only one of the dissolved gases. The stability is inferior to that of the case.

  FIG. 7 is a diagram showing another configuration example of the plating apparatus according to the present invention. As shown in FIG. 7, the present plating apparatus is provided with a gas-liquid separation device 24 between the degassing membrane module 13 of the degassing device in the pretreatment liquid circulation path of the pretreatment tank 10 and the vacuum pump 14, that is, in the vacuum exhaust line. Further, a gas-liquid separation device 43 is provided between the degassing membrane module 38 of the degassing device in the plating solution circulation path of the plating tank 30 and the vacuum pump 39, that is, in the vacuum exhaust line. By providing the gas-liquid separators 24 and 43 in this way, even if liquid (pretreatment liquid or plating solution) leaks from the degassing membrane modules 13 and 38, the vacuum pumps 14 and 39 are not adversely affected.

Moreover, even if water flows backward when the vacuum pump is stopped by using a sealed water pump for the vacuum pumps 14 and 39, the degassing membrane modules 13 and 38 are not adversely affected. As shown in FIG. 6, the gas-liquid separators 24 and 43 are configured to automatically manage the dissolved gas in the pretreatment liquid Q ₁ and the plating liquid Q _2. It may be provided between the vacuum pump 14 and between the degassing membrane module 38 and the vacuum pump 39.

The plating apparatus shown in FIG. 7 performs electrolytic plating in the tank body 31 of the plating tank 30, but the anode electrode 36 and the plating power source 42 are removed, and the plating liquid Q for electroless plating is applied to the tank body 31. ₂ may be supplied to perform electroless plating. In the above example, both between the degassing membrane module 13 and the vacuum pump 14 of the degassing device in the pretreatment liquid circulation path and between the degassing membrane module 38 and the vacuum pump 39 of the degassing apparatus in the plating solution circulation path. Although the gas-liquid separators 24 and 43 are provided, either one may be used.

FIG. 8 is a diagram showing another configuration example of the pretreatment apparatus used in the plating apparatus according to the present invention. As shown in FIG. 8, the present pretreatment apparatus rotates a pretreatment tank 10 having a collection tank 12, a substrate mounting table 25 disposed in the preprocessing tank 10, and the substrate mounting table 25 in a horizontal plane. A spray nozzle 27 that sprays the pretreatment liquid Q ₁ onto the motor 26 and the substrate W to be plated is provided.

In the pretreatment apparatus having the above-described configuration, the pretreatment liquid Q ₁ in the collection tank 12 is sent by the liquid feed pump 16 to the deaeration apparatus including the vacuum pump 14 and the deaeration membrane module 13, degassed, and the injection nozzle. 27 is sprayed onto the surface of the substrate W to be plated. At this time, since the substrate mounting table 25 on which the substrate to be plated is mounted is rotated by the motor 26, the pretreatment liquid Q ₁ sprayed from the spray nozzle 27 uniformly wets the entire surface of the substrate W to be plated. become.

As described above, since the pretreatment liquid Q ₁ is sprayed on the surface of the substrate W to be plated while deaeration with a deaeration device, bubbles in fine grooves and holes on the surface of the substrate W to be plated are easily removed, Air bubbles remaining in fine grooves and holes are easily melted, and the surface of the object to be plated is easily wetted. Thereafter, although illustration is omitted, by performing electrolytic plating or electroless plating, it is possible to perform plating without lack of plating or missing plating. Further, by adjusting the rotation speed of the motor 26 and adjusting the rotation speed of the substrate W to be plated, bubbles can be destroyed, and higher quality plating can be performed.

FIG. 9 is a diagram showing another configuration example of the pretreatment apparatus used in the plating apparatus according to the present invention. As shown in FIG. 9, the present pretreatment apparatus is provided with a storage tank 28 that stores the pretreatment liquid, and is configured to store the pretreatment liquid Q ₁ from the collection tank 12 in the storage tank 28. However, although different from the preprocessing apparatus shown in FIG. 8, the other points are substantially the same as those of the preprocessing apparatus shown in FIG.

In the above example, the pretreatment liquid Q ₁ is configured to be ejected by the ejection nozzle 27 while being deaerated by the deaeration device. You may comprise so that a pretreatment liquid may be injected from the injection nozzle 27. FIG.

FIG. 10 is a diagram showing another configuration example of the plating apparatus according to the present invention. As shown in FIG. 10, the present plating apparatus includes a plating tank 30 having a collection tank 32, a substrate mounting table 44 disposed in the plating tank 30, a motor 45 for rotating the substrate mounting table 44 in a horizontal plane, and An injection nozzle 46 for injecting the plating solution Q ₂ onto the substrate W to be plated is provided.

In the plating apparatus having the above configuration, the plating solution (electroless plating solution in this case) Q ₂ in the collection tank 32 is adjusted to a predetermined solution temperature through the temperature controller 34 by the liquid feed pump 33, and is passed through the filtration filter 35. Particles and the like are removed, sent to a degassing device comprising a vacuum pump 39 and a degassing membrane module 38, degassed, and sprayed from the spray nozzle 46 onto the surface of the substrate W to be plated. At this time, since the substrate mounting table 44 on which the substrate to be plated is mounted is rotated by the motor 45, the plating solution Q ₂ sprayed from the spray nozzle 46 uniformly wets the entire surface of the substrate W to be plated. Become.

Because while injecting degassed plating solution Q ₂ in degasifier to the surface of the plated substrate W as described above, at the same time easily escape bubbles of fine grooves and holes in the surface of the plated substrate W, the fine The bubbles remaining in the grooves and holes are easily melted, and the surface of the object to be plated is easily wetted. Therefore, high quality plating without plating defects or plating defects can be performed. Further, by adjusting the rotation speed of the motor 45 and adjusting the rotation speed of the substrate W to be plated, bubbles can be destroyed, and higher quality plating can be performed.

FIG. 11 is a diagram showing another configuration example of the plating apparatus according to the present invention. As shown in FIG. 11, the present plating apparatus is provided with a storage tank 47 for storing the plating solution, and is configured to store the plating solution Q ₂ from the collection tank 32 in the storage tank 47. Although different from the plating apparatus shown in FIG. 10, the other points are substantially the same as the plating apparatus of FIG.

In the above example, the plating solution Q ₂ is sprayed by the spray nozzle 46 while being deaerated by a degassing device. However, a degassed plating solution is prepared in advance, and the degassed plating solution. May be ejected from the ejection nozzle 46.

  Naturally, the substrate W to be plated that has been pretreated by the pretreatment apparatus shown in FIG. 8 or 9 may be plated by the plating apparatus shown in FIG. 10 or FIG. Further, in the pretreatment apparatus shown in FIGS. 8 and 9 and the plating apparatus shown in FIGS. 10 and 11, as shown in FIGS. 5 to 7, the pretreatment liquid dissolved oxygen concentration sensor, the plating liquid dissolved oxygen concentration sensor, Naturally, a control device for pretreatment liquid management, a control device for plating solution management, and a gas-liquid separation device may be provided.

In the above example, pure water is used as the pretreatment liquid Q _1. However, the pretreatment liquid is not limited to this. For example, water containing a surfactant, (acidic) degreasing agent, dilute sulfuric acid In addition, there is a pre-dip solution obtained by removing a metal component from hydrochloric acid or a plating solution (such as a methanesulfonic acid solution with respect to a solder plating solution of methanesulfonic acid). In addition, the degassing N ₂ bubbling, also used in combination, such as ultrasound are considered.

12 to 20 are diagrams showing a configuration example of a plating apparatus according to the second embodiment of the present invention.
Plating apparatus according to a second embodiment of to the present invention shown in FIG. 12 comprises a plating tank 30 for accommodating a plating solution Q _2. The plating tank 30 includes a tank body 31 and a collection tank 32 for collecting the plating solution Q ₂ overflowed from the tank body 31. The plating solution Q ₂ collected in the collection tank 32 flows into the circulation tank 47 and is sent to the temperature regulator 34 by the liquid feed pump 33, and a predetermined temperature (predetermined temperature suitable for plating) by the temperature regulator 34. The contaminants such as particles are removed by the filtration filter 35 and supplied to the tank body 31.

Here, the circulation tank 47, the liquid feed pump 33, the temperature regulator 34, and the filtration filter 35 constitute a first plating solution circulation path for circulating the plating solution. A degassing membrane module 38 is provided in the circulation tank 47, and a vacuum pump 39 is connected to the degassing membrane module 38. The degassing membrane module 38 and the vacuum pump 39 constitute a degassing device for removing the dissolved gas in the plating solution Q ₂ accommodated in the circulation tank 47. Further, 37 is a flow meter for measuring the flow rate of the plating solution Q _2. Here, as the degassing membrane module 38, for example, a membrane type module that removes various dissolved gases such as oxygen, air, and carbon dioxide existing in the liquid through the membrane is used.

In the plating apparatus having the above configuration, the substrate W to be plated such as a semiconductor wafer held by the substrate holder 15 and the anode electrode 36 are disposed opposite to each other in the plating solution Q ₂ of the tank body 31, and the plating power source 42 By plating a current between the plating substrate W and the anode electrode 36, the substrate W to be plated is plated. Here, since the plating solution Q ₂ is deaerated by a deaeration device comprising a deaeration membrane module 38 and a vacuum pump 39, fine wiring grooves, plugs, and resists formed on the substrate W to be plated are used. since bubbles in the aperture the plating solution Q ₂ dissolved in the plating solution Q ₂ to which are degassed are entering the opening of the fine wiring grooves or plug, resist, plating chipping, plating omission of occurrence Disappear.

As described above, the degassing device including the degassing membrane module 38 and the vacuum pump 39 is provided in the circulation tank 47 of the first plating solution circulation path, and the tank body 31 overflows and is collected in the collection tank 32. The dissolved gas in the plating solution Q ₂ accommodated in the circulation tank 47 is removed by the degassing membrane module 38. As a result, the liquid reaction of the plating solution Q ₂ due to dissolved oxygen or the like can be prevented, and side reactions and deterioration of the plating solution can be suppressed, and a stable plating environment can be obtained.

In the plating apparatus shown in FIG. 12, the plating liquid Q ₂ for electrolytic plating is supplied to the tank body 31 of the plating tank 30 to perform electrolytic plating. However, the anode electrode 36 and the plating power source 42 are removed and the tank is removed. Electroless plating may be performed by supplying a plating solution Q ₂ for electroless plating to the main body 31 and immersing the substrate W to be plated held by the substrate holder 15.

FIG. 13 is a diagram showing a configuration example of a pretreatment apparatus for a plating apparatus according to the present invention. The present plating apparatus includes a pretreatment tank 10 as shown in FIG. 13 in addition to a plating tank (not shown) for plating the substrate W to be plated. The pretreatment tank 10 includes a tank body 11 and a collection tank 12 for collecting the pretreatment liquid Q ₁ overflowed from the tank body 11. The pretreatment liquid Q ₁ collected in the collection tank 12 flows into the circulation tank 28 and is sent to the temperature regulator 18 by the liquid feed pump 16, and the temperature regulator 18 makes a predetermined temperature (a predetermined temperature suitable for the pretreatment). Temperature), contaminants such as particles are removed by the filter 19 and supplied to the tank body 11.

Here, the circulation tank 28, the liquid feed pump 16, the temperature regulator 18, and the filter 19 constitute a first pretreatment liquid circulation path for circulating the pretreatment liquid. A degassing membrane module 13 is provided in the circulation tank 28, and a vacuum pump 14 is connected to the degassing membrane module 13. The degassing membrane module 13 and the vacuum pump 14 constitute a degassing device that removes dissolved gas in the pretreatment liquid Q ₁ accommodated in the circulation tank 28. Further, 22 is a flow meter for measuring the flow rate of the pretreatment liquid Q _1. Here, as the degassing membrane module 13, for example, a membrane type one that removes various dissolved gases such as oxygen, air, and carbon dioxide existing in the liquid through the membrane is used.

Pretreatment is performed by immersing the substrate W to be plated such as a semiconductor wafer held by the substrate holder 15 in the pretreatment liquid Q ₁ of the tank body 11. Since the pretreatment liquid Q ₁ is deaerated by a deaeration device including a deaeration membrane module 13 and a vacuum pump 14, fine wiring grooves and plugs formed on the substrate W to be plated, and openings for resist The bubbles in the metal dissolve in the degassed pretreatment liquid Q ₁ and the plating solution penetrates into fine wiring grooves, plugs, and resist openings, so that the substrate W to be plated is plated following the pretreatment. When immersed in the plating solution Q ₂ in the treatment, the pretreatment solution Q _{1 in} the wiring groove, plug, and resist opening is replaced with the plating solution Q ₂ , thereby eliminating the occurrence of missing plating or missing plating. .

FIG. 14 is a diagram showing a configuration example of the plating apparatus of the present invention. The plating apparatus shown in FIG. 12 is different from the plating apparatus shown in FIG. 12 in that the substrate W to be plated such as a semiconductor wafer held by the substrate holder 15 and the anode electrode 36 are plated in the tank body 31. a point which is arranged to face vertically in the liquid Q _2. Other points are the same as those of the plating apparatus shown in FIG.

FIG. 15 is a diagram showing a configuration example of the plating apparatus of the present invention. As this plating apparatus shown, the circulation tank 47 via a valve 49 connecting the inert gas cylinder 48, thereby making it possible to purge the inert gas to the liquid surface of the plating solution Q _2. The circulation tank 47 is connected to a deaeration membrane module 38 to which a circulation pump 50, a temperature regulator 34, and a vacuum pump 39 are connected. The circulation pump 50, the temperature regulator 34, and the degassing membrane module 38 constitute a second plating solution circulation path.

In the plating apparatus having the above-described configuration, the plating solution Q ₂ overflowing the tank body 31 is collected in the collection tank 32 and flows into the circulation tank 47. The plating solution Q ₂ in the circulation tank 47 is sent to the filtration filter 35 by the liquid feed pump 33, particles and the like are removed, and supplied to the tank body 31. Further, the plating solution Q ₂ in the circulation tank 47 is circulated through the temperature regulator 34 and the degassing membrane module 38 by the circulation pump 50. By this circulation, the plating solution Q ₂ is adjusted to a predetermined temperature by the temperature regulator 34 and degassed by the degassing membrane module 38.

As described above, the plating solution Q ₂ in the circulation tank 47 is separated from the circulation system that sends the plating solution Q ₂ in the circulation tank 47 to the tank body 31 through the liquid feed pump 33, the filtration filter 35, and the flow meter 37. the circulation pump 50, temperature regulator 34 is provided with second plating solution circulating path for returning to the circulation tank 47 through the degassing membrane modules 38, degassed plating solution Q ₂ to which flow through the plating solution circulating path of the second Since the membrane module 38 is deaerated, even if the flow rate of the first plating solution circulation path for sending the plating solution Q ₂ to the tank body 31 is changed, the flow rate of the plating solution Q ₂ flowing to the degassing membrane module 38 is changed. Since there is no need to change, stable deaeration performance can be demonstrated.

Further, by supplying an inert gas from an inert gas cylinder 48 through a valve 49 to the surface of the plating solution Q ₂ in the circulation tank 47, active gas such as oxygen in the atmosphere is supplied to the plating solution Q ₂ . Contact with the surface can be prevented, and these active gases do not dissolve into the plating solution Q ₂ from the liquid surface.

FIG. 16 is a diagram showing a configuration of a pretreatment apparatus for a plating apparatus according to the present invention. The present plating apparatus is provided with a pretreatment tank 10 and a circulation tank 28 for the pretreatment liquid Q ₁ in addition to a plating tank (not shown) for plating the substrate W to be plated. In addition, an inert gas cylinder 48 is connected to the circulation tank 28 via a valve 49 so that an inert gas can be supplied to the liquid surface of the pretreatment liquid Q ₁ . The circulation tank 28 is connected to a degassing membrane module 13 to which a circulation pump 50, a temperature regulator 18, and a vacuum pump 14 are connected. The circulation pump 50, the temperature regulator 18, and the degassing membrane module 13 constitute a second pretreatment liquid circulation path.

In the plating apparatus having the above configuration, the pretreatment liquid Q _{1 that} has overflowed the tank body 11 of the pretreatment tank 10 is collected in the collection tank 42 and flows into the circulation tank 28. The pretreatment liquid Q ₁ in the circulation tank 28 is sent to the filtration filter 19 by the liquid feed pump 16 to remove particles and the like and is supplied to the tank body 11. Further, the pretreatment liquid Q ₁ in the circulation tank 28 is circulated through the temperature regulator 18 and the degassing membrane module 13 by the circulation pump 50. By this circulation, the pretreatment liquid Q ₁ is adjusted to a predetermined temperature by the temperature regulator 18 and degassed by the degassing membrane module 13.

As described above, in the circulation tank 28, separately from the first pretreatment liquid circulation path for sending the pretreatment liquid Q ₁ to the tank body 11 through the liquid feed pump 16, the filter 19, and the flow meter 22. Is provided with a second pretreatment liquid circulation path for returning the pretreatment liquid Q ₁ to the circulation tank 28 through the circulation pump 50, the temperature regulator 18, and the degassing membrane module 13. Since the flowing pretreatment liquid Q ₁ is deaerated by the degassing membrane module 13, the second pretreatment liquid circulation path for sending the pretreatment liquid Q ₁ to the tank body 11 changes even if the flow rate of the first pretreatment liquid circulation path changes. Since it is not necessary to change the flow rate of the pretreatment liquid Q ₁ flowing through the pretreatment liquid circulation path, that is, the degassing membrane module 13, stable degassing performance can be exhibited.

Further, by supplying an inert gas from the inert gas cylinder 48 to the liquid surface of the pretreatment liquid Q ₁ in the circulation tank 28, active gas such as oxygen in the atmosphere comes into contact with the liquid surface of the pretreatment liquid Q _1. This prevents the active gas from being dissolved into the pretreatment liquid Q ₁ from the liquid surface.

FIG. 17 is a diagram showing a configuration example of the plating apparatus of the present invention. The plating apparatus shown in FIG. 15 is different from the plating apparatus shown in FIG. 15 in that the substrate W to be plated such as a semiconductor wafer held by the substrate holder 15 and the anode electrode 16 are plated in the tank body 31. a point which is arranged to face vertically in the liquid Q _2. Other points are the same as those of the plating apparatus of FIG.

FIG. 18 is a diagram showing a configuration example of the plating apparatus of the present invention. In this plating apparatus, a degassing membrane module 38 is provided in a tank body 31 of a plating tank 30 that contains a plating solution Q _2, and a vacuum pump 39 is connected to the degassing film module 38. The degassing membrane module 38 and the vacuum pump 39 constitute a degassing device that removes dissolved gas in the plating solution Q ₂ accommodated in the tank body 31. Here, as in the case of FIG. 12, for the degassing membrane module 38, for example, a membrane type that removes various dissolved gases such as oxygen, air, and carbon dioxide existing in the liquid through the membrane is used.

In the plating apparatus having the configuration shown in FIG. 18, the plating solution Q ₂ overflowed from the tank body 31 and collected in the collection tank 12 is sent to the temperature regulator 34 by the liquid feed pump 33, The temperature is adjusted to a predetermined temperature suitable for plating, and contaminants such as particles are removed by the filter 35 and supplied to the tank body 31.

A substrate W to be plated such as a semiconductor wafer held by the substrate holder 15 and the anode electrode 36 are arranged to face each other in the plating solution Q ₂ of the tank body 31, and the substrate to be plated W and the anode electrode 36 are received from the plating power source 42. The substrate W to be plated is plated by passing a current between the two. Here, since the plating solution Q ₂ in the tank body 31 is degassed by a degassing device comprising a degassing membrane module 38 and a vacuum pump 39, fine wiring grooves formed on the substrate W to be plated plug, because the bubbles within the openings of the resist is the plating solution Q ₂ dissolved in the plating solution Q ₂ to which the degassing penetrates into the opening of the fine wiring grooves or plug, resist, plating chipping, plating dislodgement Occurrence disappears.

By providing the tank body 31 with the degassing device comprising the degassing membrane module 38 and the vacuum pump 39 as described above, the dissolved gas in the plating solution Q ₂ accommodated in the tank body 31 is removed by the degassing membrane module 38. Removed. As a result, the liquid reaction of the plating solution Q ₂ due to dissolved oxygen or the like can be prevented, and side reactions and deterioration of the plating solution can be suppressed, and a stable plating environment can be obtained.

In the plating apparatus shown in FIG. 18, the plating liquid Q ₂ for electrolytic plating is supplied to the tank body 31 of the plating tank 30 to perform electrolytic plating. However, the anode electrode 36 and the plating power source 42 are removed and the tank is removed. The configuration shown in FIG. 12 is that electroless plating may be performed by supplying a plating solution Q ₂ for electroless plating to the main body 31 and immersing the substrate W to be plated held by the substrate holder 15. This is the same as the plating apparatus.

FIG. 19 is a diagram showing a configuration example of a pretreatment apparatus for a plating apparatus of the present invention. In addition to a plating tank (not shown) that performs plating on the substrate W to be plated, the present plating apparatus includes a pretreatment tank 10 as shown in FIG. 19, and degassed in the tank body 11 of the pretreatment tank 10. A membrane module 13 is provided, and a vacuum pump 14 is connected to the degassing membrane module 13. The degassing membrane module 13 and the vacuum pump 14 constitute a degassing device that removes dissolved gas in the pretreatment liquid Q ₁ accommodated in the pretreatment tank 10. Here, as in the case of FIG. 13, as the degassing membrane module 13, for example, a membrane type that removes various dissolved gases such as oxygen, air, and carbon dioxide existing in the liquid through the membrane is used.

In the pretreatment apparatus shown in FIG. 19, the pretreatment liquid Q ₁ overflowed from the tank body 11 is sent to the temperature regulator 18 by the liquid feed pump 16, and a predetermined temperature (a predetermined temperature suitable for the pretreatment) is sent by the temperature regulator 18. And the contaminants such as particles are removed by the filter 19 and supplied to the tank body 11.

Pretreatment is performed by immersing the substrate W to be plated such as a semiconductor wafer held by the substrate holder 15 in the pretreatment liquid Q ₁ of the tank body 11. Since the pretreatment liquid Q ₁ is deaerated by a deaeration device including a deaeration membrane module 13 and a vacuum pump 14, fine wiring grooves and plugs formed in the substrate W to be plated, resist openings, and the like. The bubbles inside dissolve in the pre-treated liquid Q ₁ which has been degassed, and the plating solution penetrates into fine wiring grooves, plugs, and resist openings, so that the substrate W to be plated is subjected to the pre-treatment. in when immersed in the plating solution Q _2, wiring grooves or plug, substitution before in the opening of the resist processing liquid Q ₁ and the plating solution Q ₂ is performed, chipping plating, there is no occurrence of omission plating.

FIG. 20 is a diagram showing a configuration example of the plating apparatus of the present invention. The present plating apparatus is different from the plating apparatus shown in FIG. 18 in that, in the plating apparatus shown in FIG. 20, the substrate W to be plated such as a semiconductor wafer held by the substrate holder 15 and the anode electrode 36 are plated in the tank body 31. a point which is arranged to face vertically in the liquid Q _2. The other points are the same as those of the plating apparatus shown in FIG.

  In the apparatus having the configuration shown in FIGS. 12 to 20, the deaeration membrane modules 38 and 13 are diaphragm type units that remove various dissolved gases such as oxygen, nitrogen, and carbon dioxide existing in the liquid through the diaphragm. use.

As described above, in the plating apparatus according to the present invention, the dissolved gas in the plating solution Q ₂ and the pretreatment solution Q ₁ can be always lowered, so that it is difficult to form bubbles on the surface of the substrate W to be plated. Further, since the plating solution Q ₂ in the circulation tank 47 is constantly deaerated, even if the flow rate of the first plating solution circulation path for supplying the plating solution Q ₂ to the tank body 31 of the plating tank 30 is large, the plating solution Q ₂ is removed. There is no need to increase the deaeration performance of the air device. In addition, the pretreatment liquid Q ₁ is immersed in the substrate to be plated W before the plating process. However, since the pretreatment liquid Q ₁ may be degassed when there is no substrate W to be plated, the pretreatment liquid Q ₁ is degassed. The deaeration capacity of the deaeration device may be small. Further, even when the flow rate of the plating solution or the pretreatment solution is large, it is economical because it is not necessary to provide a large deaerator. Furthermore, even when the supply flow rate of the plating solution or the pretreatment solution is changed, the flow rate flowing through the deaeration device can be kept constant, so that stable deaeration can be performed.

  In addition, since an inert gas supply means for supplying an inert gas to the liquid surface of the plating solution circulation tank or the pretreatment liquid circulation tank is provided to supply the inert gas to the liquid surface, The active gas does not dissolve from the liquid surface, and even when the operation of the degassing device is stopped, the dissolved gas of the degassed liquid does not increase, which is efficient.

  FIG. 21 is a diagram illustrating a configuration example of a plating apparatus according to the third embodiment of the present invention. In this plating apparatus, the structure in which the plating tank 30 is provided and the substrate to be plated W and the anode electrode 36 are arranged in the tank body 31 for storing the plating solution and the current is supplied by the power source 42 is described above. This is the same as each of the embodiments. Then, the plating solution is allowed to overflow from the tank body to the collection tank 32, and the plating solution is pumped by the pump 33, and is removed from the temperature regulator 34, the filtration filter 35, the degassing membrane module 38 and the vacuum pump 39. The configuration in which the plating solution is degassed through the gas device and is circulated through the plating tank main body is the same as in each of the above-described embodiments.

  In this embodiment, a bypass pipe 52 that bypasses the pipe passing through the deaerators 38 and 39 is provided. The bypass pipe 52 is branched by a three-way valve 53 and includes a flow rate adjusting valve 54. The pipe passing through the deaeration device is provided with a flow meter 37, and after joining the bypass pipe 52, the plating solution dissolved oxygen concentration sensor 40 and the flow meter 37 are arranged. Therefore, each flow volume which flows into piping and bypass piping which pass a deaeration device is controllable. When the pressure on the decompression side of the degassing device is small, the pressure flowing through the degassing device is small. When the flow rate is large, the pressure is increased, and thereby the dissolved oxygen concentration in the plating solution can be adjusted. .

  And when the capacity | capacitance of a deaeration apparatus is small with respect to a desired circulation flow rate, it is preferable to flow the part which exceeds the capacity | capacitance by making the flow volume which flows through a deaeration apparatus constant. Thereby, the flow volume of the desired plating solution to the circulation system can be ensured while making full use of the capability of the deaeration device. And since the plating solution dissolved oxygen concentration sensor 40 is arrange | positioned after the bypass piping and the piping which flows through a deaeration apparatus, the dissolved oxygen concentration as the whole of the plating solution which flows through a circulator can be monitored. As described above, the dissolved oxygen concentration preferably falls between 4 ppm and 1 ppb. The output of the dissolved oxygen concentration sensor 40 is transmitted to a control device (not shown), and the pressure on the pressure reducing side of the deaeration device is based on the data. May be adjusted. Thereby, the dissolved oxygen concentration in the plating solution which flows through the circulation system as a whole including bypass piping is controllable.

  FIG. 22 shows a case where a degassing device is arranged in the above-described circulation system, and that a bypass pipe is provided in the degassing device is applied to a pretreatment tank. That is, the substrate W to be pretreated is disposed in the tank body 11 of the pretreatment tank 10, the pretreatment liquid is supplied from the bottom of the tank, and the pretreatment liquid overflowing the tank body 11 is collected in the collection tank 12. The pretreatment liquid is circulated to the bottom of the tank body by the pump 16 through the circulation system piping. A degassing device including a degassing membrane module 13 and a vacuum pump 14 is arranged in the circulation system piping, and a bypass piping 52 is arranged for the piping. Also in this embodiment, it is preferable to flow a constant flow rate that can be processed through the deaerator, and the amount exceeding the capacity is bypassed by the bypass pipe 52. This circulating system is also provided with a dissolved oxygen concentration sensor 20, thereby adjusting the deaeration amount of the degassing device and adjusting the dissolved oxygen concentration of the pretreatment liquid to be circulated within a predetermined target value range. Is preferred. In this way, the plating tank and / or the pretreatment tank is provided with a deaeration device in its circulation system, and further provided with a bypass pipe, so that the deaeration device always has a relatively small capacity regardless of the amount of circulation. The desired deaeration can be performed with the above, and stable and high-quality plating can always be performed. In each of the above-described embodiments, oxygen is mainly described as an example of the dissolved gas, but it is needless to say that the present invention can be similarly applied to various dissolved gases as well as oxygen.

  The present invention relates to a plating method and apparatus for forming fine wiring or the like on the surface of a semiconductor wafer or the like by copper plating or the like. Therefore, it can be suitably used for manufacturing electronic devices such as semiconductor devices.

FIG. 1 is a diagram showing a configuration example of a conventional plating apparatus. FIG. 2 is a diagram showing a configuration example of the plating apparatus according to the first embodiment of the present invention. FIG. 3 is a diagram illustrating a configuration example of a plating apparatus according to a modification of the first embodiment of the present invention. FIG. 4 is a diagram illustrating a configuration example of a plating apparatus according to a modification of the first embodiment of the present invention. FIG. 5 is a diagram showing a configuration example of a plating apparatus according to a modification of the first embodiment of the present invention. FIG. 6 is a diagram showing a configuration example of a plating apparatus according to a modification of the first embodiment of the present invention. FIG. 7 is a diagram showing a configuration example of a plating apparatus according to a modification of the first embodiment of the present invention. FIG. 8 is a diagram showing a configuration example of a pretreatment apparatus used in a plating apparatus according to a modification of the first embodiment of the present invention. FIG. 9 is a diagram illustrating a configuration example of a pretreatment apparatus used in a plating apparatus according to a modification of the first embodiment of the present invention. FIG. 10 is a diagram showing a configuration example of a plating apparatus according to a modification of the first embodiment of the present invention. FIG. 11 is a diagram showing a configuration example of a plating apparatus according to a modification of the first embodiment of the present invention. FIG. 12 is a diagram showing a configuration example of a plating apparatus according to the second embodiment of the present invention. FIG. 13 is a diagram illustrating a configuration example of a pretreatment apparatus for a plating apparatus according to a modification of the second embodiment of the present invention. FIG. 14 is a diagram showing a configuration example of a plating apparatus according to a modification of the second embodiment of the present invention. FIG. 15 is a diagram illustrating a configuration example of a plating apparatus according to a modification of the second embodiment of the present invention. FIG. 16 is a diagram illustrating a configuration example of a pretreatment apparatus for a plating apparatus according to a modification of the second embodiment of the present invention. FIG. 17 is a diagram illustrating a configuration example of a plating apparatus according to a modification of the second embodiment of the present invention. FIG. 18 is a diagram showing a configuration example of a plating apparatus according to a modification of the second embodiment of the present invention. FIG. 19 is a diagram showing a configuration example of a pretreatment apparatus for a plating apparatus according to a modification of the second embodiment of the present invention. FIG. 20 is a diagram illustrating a configuration example of a plating apparatus according to a modification of the second embodiment of the present invention. FIG. 21 is a diagram showing a configuration example of a plating apparatus according to the third embodiment of the present invention. FIG. 22 is a diagram showing a configuration example of a pretreatment apparatus for a plating apparatus according to a modification of the third embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Pretreatment tank 11 Tank main body 12 Collection tank 13 Deaeration membrane module 14 Vacuum pump 15 Substrate holder 16 Liquid feed pump 17 Pretreatment liquid source 18 Temperature regulator 19 Filtration filter 20 Pretreatment liquid dissolved oxygen concentration sensor 22 Flow meter 23 Control Device 25 Substrate Placement Table 26 Motor 27 Injection Nozzle 28 Storage Tank 30 Plating Tank 31 Tank Body 32 Collection Tank 33 Liquid Feed Pump 34 Temperature Controller 35 Filtration Filter 36 Anode Electrode 38 Deaeration Membrane Module 39 Vacuum Pump 40 Plating Solution Dissolved oxygen concentration sensor 42 Plating power supply 43 Gas-liquid separation device 44 Substrate mounting table 45 Motor 46 Injection nozzle 47 Circulation tank 48 Inert gas cylinder 49 Valve 50 Circulation pump 52 Bypass piping 53 Three-way valve 54 Flow control valve

Claims (9)

A plating method for performing electroplating or electroless plating after pretreatment using a pretreatment liquid on a substrate to be plated on which fine grooves or holes or resist openings are formed on the substrate surface,
The pretreatment liquid overflowed from the opening of the pretreatment tank holding the pretreatment liquid is collected, the dissolved gas in the collected pretreatment liquid is degassed, and the degassed pretreatment liquid is put into the pretreatment tank. Then, the substrate to be plated is immersed in the degassed pretreatment liquid in the pretreatment tank to allow the pretreatment liquid to enter the fine grooves or holes on the substrate surface or the resist openings, and then the substrate to be plated is plated. The plating method characterized by the above-mentioned. Pretreatment liquid, the plating method according to claim 1, characterized in that pure water is used. Immerse the plating substrate into which the pretreatment liquid has penetrated into the fine grooves or holes or the resist opening, in the plating liquid,
Replacing the pretreatment solution and plating solution that penetrates the substrate to be plated,
The plating method according to claim 1, wherein plating is performed after the fine groove or hole or the resist opening is filled with a plating solution. A plating apparatus for performing electroplating or electroless plating after performing pretreatment on a substrate to be plated using a pretreatment liquid,
A pretreatment tank capable of holding a pretreatment liquid for immersing the substrate to be plated and having an opening for overflowing the pretreatment liquid;
A collection tank for collecting the pretreatment liquid overflowed from the opening of the pretreatment tank;
A degassing device for degassing the dissolved gas in the pretreatment liquid collected in the collection tank;
A liquid feed pump for supplying the pretreatment liquid to the pretreatment tank;
A plating apparatus comprising: a plating tank that performs electrolytic plating or electroless plating of a substrate to be plated using a plating solution. The plating apparatus according to claim 4 , wherein the degassing apparatus includes at least a degassing film module having a degassing film and a vacuum pump. A dissolved oxygen concentration sensor for detecting the dissolved oxygen concentration of the pretreatment liquid is provided, and a control device for controlling the pressure of the deaeration device is provided, and the control device controls the pressure of the vacuum exhaust system to dissolve the pretreatment liquid. The plating apparatus according to claim 4 , wherein the oxygen concentration is adjustable. A first pretreatment liquid circulation path for circulating pretreatment liquid from the pretreatment tank to the pretreatment tank via a pretreatment liquid circulation tank is provided, and the degassing device is provided in the pretreatment liquid circulation tank. The plating apparatus according to claim 4 . A first pretreatment liquid circulation path for circulating a pretreatment liquid from the pretreatment tank to the pretreatment tank via a pretreatment liquid circulation tank; a second pretreatment solution circulation path for circulating the pretreatment liquid to the treatment liquid circulation tank, according to claim 4, wherein said providing the deaeration device in the second pretreatment solution circulation route Plating equipment. The degassing device is provided in the pretreatment liquid circulation path for circulating the pretreatment liquid in the pretreatment tank, and a bypass pipe for bypassing the degassing device is provided to control the flow rate of the degassing device. The plating apparatus according to claim 4 .

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