JP4601679B2 - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
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- JP4601679B2 JP4601679B2 JP2008040717A JP2008040717A JP4601679B2 JP 4601679 B2 JP4601679 B2 JP 4601679B2 JP 2008040717 A JP2008040717 A JP 2008040717A JP 2008040717 A JP2008040717 A JP 2008040717A JP 4601679 B2 JP4601679 B2 JP 4601679B2
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- 239000004065 semiconductor Substances 0.000 claims description 227
- 238000000926 separation method Methods 0.000 claims description 211
- 239000000758 substrate Substances 0.000 claims description 35
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 4
- 238000010248 power generation Methods 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 83
- 239000011787 zinc oxide Substances 0.000 description 41
- 229910006404 SnO 2 Inorganic materials 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 24
- 239000004925 Acrylic resin Substances 0.000 description 20
- 229920000178 Acrylic resin Polymers 0.000 description 20
- 239000011521 glass Substances 0.000 description 11
- 239000011231 conductive filler Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000001678 irradiating effect Effects 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- -1 ZnO Chemical class 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229920003026 Acene Polymers 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
〈太陽電池モジュールの構成〉
以下において、本発明の第1実施形態に係る太陽電池モジュールの構成について、図1を参照しながら説明する。
次に、第2電極層6の構成について、図2を参照しながら説明する。図2は、図1の部分拡大図である。図2に示すように、第2電極層6は、第1導電層6aと、第2導電層6bとを有する。
次に、本発明の第1実施形態に係る太陽電池モジュール10の製造方法について、図3及び図4を参照しながら説明する。
本発明の第1実施形態に係る太陽電池モジュール10では、第2電極層6に含まれる第2導電層6bの抵抗率が、第2電極層6に含まれる第1導電層6aの抵抗率よりも低いため、第1半導体層3及び第2半導体層5において発生した電流は、主に、第2導電層6bに沿って流れる。
本発明は上記の実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
以下のようにして、実施例に係る太陽電池モジュール10を作製した。
以下のようにして、比較例1に係る太陽電池モジュール20を作製した。
以下のようにして、比較例2に係る太陽電池モジュール20を作製した。
次に、実施例及び比較例1に係る太陽電池モジュールについて、開放電圧VOC、短絡電流ISC、曲線因子FF、出力値Pmax及び低電位差領域幅の各特性値の比較を行った。比較結果を表1に示す。各特性値の測定条件は、AM1.5、100mW/cm2、25℃とした。尚、表1においては、実施例に係る太陽電池モジュール10の開放電圧VOC、短絡電流ISC、曲線因子FF及び出力値Pmaxを、比較例1に係る太陽電池モジュール20の開放電圧VOC、短絡電流ISC、曲線因子FF及び出力値Pmaxの値を1.00として規格化した値として示している。
実施例及び比較例2に係る太陽電池モジュールについて、収集効率の比較を行った。図7は、実施例及び比較例2に係る太陽電池モジュールの収集効率を示す図である。
次に、実施例及び比較例2に係る太陽電池モジュールについて、耐湿試験を行った。表2は、実施例及び比較例2に係る太陽電池モジュールの耐湿試験後における開放電圧VOC、短絡電流ISC、曲線因子FF及び出力値Pmaxの各特性値を示す。試験条件は、温度85℃、湿度85%とし、試験時間は2000時間とした。
10a…第1領域
10b…第2領域
10c…第3領域
1…基板
2…第1電極層
3…第1半導体層
4…透光性導電層
45…透光性導電層と第2半導体層との界面
5…第2半導体層
6…第2電極層
6a…第1導電層
6b…第2導電層
71…第1分離溝
72…第2分離溝
73…第3分離溝
8…透光性導電層分離溝
Claims (3)
- 基板の主面上において、第1電極層と、第1半導体層と、透光性導電層と、第2半導体層と、第2電極層とが順次積層された太陽電池モジュールであって、
前記第1電極層を分離する第1分離溝と、
前記第1半導体層、前記透光性導電層及び前記第2半導体層を分離する第2分離溝と、
前記第2分離溝を挟んで前記第1分離溝の反対側の位置に形成され、前記第2電極層、前記第2半導体層、前記透光性導電層及び前記第1半導体層を分離する第3分離溝とを備え、
前記第2電極層は、前記第2分離溝の底面を構成する前記第1半導体層上、前記第2分離溝の内壁上、及び前記第2半導体層上に形成される第1導電層と、前記第1導電層上に形成される第2導電層とを有しており、
前記第1導電層の抵抗率は、前記第2導電層の抵抗率よりも高く、
前記第1導電層は、前記第2分離溝の底面を構成する前記第1電極層上において、少なくとも前記透光性導電層と前記第2半導体層との界面の位置まで充填される
ことを特徴とする太陽電池モジュール。 - 前記基板は透光性を有し、
前記第1半導体層は、非晶質シリコン系半導体によって構成される発電層を含み、
前記第2半導体層は、微結晶シリコン系半導体によって構成される発電層を含む
ことを特徴とする請求項1に記載の太陽電池モジュール。 - 前記第1導電層は、導電性粒子を含む樹脂によって構成されることを特徴とする請求項1に記載の太陽電池モジュール。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008040717A JP4601679B2 (ja) | 2008-02-21 | 2008-02-21 | 太陽電池モジュール |
KR1020107017816A KR101048958B1 (ko) | 2008-02-21 | 2009-02-20 | 태양 전지 모듈 |
US12/593,186 US8445775B2 (en) | 2008-02-21 | 2009-02-20 | Solar cell module |
CN2009801059423A CN101952980B (zh) | 2008-02-21 | 2009-02-20 | 太阳能电池模块 |
PCT/JP2009/053033 WO2009104737A1 (ja) | 2008-02-21 | 2009-02-20 | 太陽電池モジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008040717A JP4601679B2 (ja) | 2008-02-21 | 2008-02-21 | 太陽電池モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009200268A JP2009200268A (ja) | 2009-09-03 |
JP4601679B2 true JP4601679B2 (ja) | 2010-12-22 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008040717A Expired - Fee Related JP4601679B2 (ja) | 2008-02-21 | 2008-02-21 | 太陽電池モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US8445775B2 (ja) |
JP (1) | JP4601679B2 (ja) |
KR (1) | KR101048958B1 (ja) |
CN (1) | CN101952980B (ja) |
WO (1) | WO2009104737A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4601679B2 (ja) | 2008-02-21 | 2010-12-22 | 三洋電機株式会社 | 太陽電池モジュール |
CN102612756A (zh) * | 2010-03-18 | 2012-07-25 | 富士电机株式会社 | 薄膜太阳能电池和其制造方法 |
JP2012023236A (ja) * | 2010-07-15 | 2012-02-02 | Fuji Electric Co Ltd | 薄膜太陽電池 |
JPWO2013031978A1 (ja) * | 2011-08-31 | 2015-03-23 | 旭硝子株式会社 | 薄膜太陽電池モジュールおよびその製造方法 |
JP2014029814A (ja) | 2012-07-31 | 2014-02-13 | Sony Corp | 表示装置および電子機器 |
US20150020863A1 (en) * | 2013-07-22 | 2015-01-22 | International Business Machines Corporation | Segmented thin film solar cells |
EP3109905A1 (en) | 2015-06-26 | 2016-12-28 | International Iberian Nanotechnology Laboratory | A solar cell module |
GB2541412B (en) * | 2015-08-18 | 2018-08-01 | M Solv Ltd | Method and Apparatus for Forming a Conductive Track |
Citations (5)
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JP2000252489A (ja) * | 1999-03-03 | 2000-09-14 | Kanegafuchi Chem Ind Co Ltd | 集積型シリコン系薄膜光電変換装置とその製造方法 |
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JP2003273383A (ja) * | 2002-03-15 | 2003-09-26 | Sharp Corp | 太陽電池素子およびその製造方法 |
JP2006313872A (ja) * | 2005-04-06 | 2006-11-16 | Mitsubishi Heavy Ind Ltd | 多接合薄膜太陽電池 |
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Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3436858B2 (ja) * | 1997-02-27 | 2003-08-18 | シャープ株式会社 | 薄膜太陽電池の製造方法 |
JP2002261308A (ja) | 2001-03-01 | 2002-09-13 | Kanegafuchi Chem Ind Co Ltd | 薄膜光電変換モジュール |
US6632993B2 (en) * | 2000-10-05 | 2003-10-14 | Kaneka Corporation | Photovoltaic module |
JP2004228333A (ja) * | 2003-01-23 | 2004-08-12 | Canon Inc | 光起電力セル、及びその製造方法 |
JP2006013403A (ja) * | 2004-06-29 | 2006-01-12 | Sanyo Electric Co Ltd | 太陽電池、太陽電池モジュール、その製造方法およびその修復方法 |
JP4086860B2 (ja) * | 2005-05-23 | 2008-05-14 | 三洋電機株式会社 | 半導体装置 |
JP2007324633A (ja) * | 2007-09-14 | 2007-12-13 | Masayoshi Murata | 集積化タンデム型薄膜シリコン太陽電池モジュール及びその製造方法 |
JP4601679B2 (ja) | 2008-02-21 | 2010-12-22 | 三洋電機株式会社 | 太陽電池モジュール |
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2008
- 2008-02-21 JP JP2008040717A patent/JP4601679B2/ja not_active Expired - Fee Related
-
2009
- 2009-02-20 KR KR1020107017816A patent/KR101048958B1/ko not_active IP Right Cessation
- 2009-02-20 US US12/593,186 patent/US8445775B2/en not_active Expired - Fee Related
- 2009-02-20 CN CN2009801059423A patent/CN101952980B/zh not_active Expired - Fee Related
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000252489A (ja) * | 1999-03-03 | 2000-09-14 | Kanegafuchi Chem Ind Co Ltd | 集積型シリコン系薄膜光電変換装置とその製造方法 |
JP2003046099A (ja) * | 2001-07-30 | 2003-02-14 | Sanyo Electric Co Ltd | 集積型光起電力装置及びその製造方法 |
JP2003273383A (ja) * | 2002-03-15 | 2003-09-26 | Sharp Corp | 太陽電池素子およびその製造方法 |
JP2006313872A (ja) * | 2005-04-06 | 2006-11-16 | Mitsubishi Heavy Ind Ltd | 多接合薄膜太陽電池 |
JP2007032463A (ja) * | 2005-07-28 | 2007-02-08 | Ishikawajima Harima Heavy Ind Co Ltd | 多段往復圧縮機 |
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Publication number | Publication date |
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KR20100102212A (ko) | 2010-09-20 |
US20100300517A1 (en) | 2010-12-02 |
CN101952980B (zh) | 2012-05-23 |
WO2009104737A1 (ja) | 2009-08-27 |
US8445775B2 (en) | 2013-05-21 |
KR101048958B1 (ko) | 2011-07-12 |
CN101952980A (zh) | 2011-01-19 |
JP2009200268A (ja) | 2009-09-03 |
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