JP4591573B2 - Electro-optical device substrate, electro-optical device, and electronic apparatus - Google Patents

Description

  The present invention relates to an electro-optical device substrate used in an electro-optical device such as a liquid crystal device, an electro-optical device including the electro-optical device substrate, and a liquid crystal projector including the electro-optical device. The present invention relates to the technical field of electronic equipment.

  In a liquid crystal device that is an example of this type of electro-optical device, a storage capacitor is added in parallel with the liquid crystal capacitor in order to prevent the image signal held in the pixel portion from leaking. Such a storage capacitor is formed in a non-opening region provided around the opening region in a plurality of pixels constituting the display region of the liquid crystal device. The opening region is a region surrounded by the non-opening region and is often formed in a rectangular shape. In addition, in order to electrically connect the storage capacitor formed in the non-opening region and the transparent pixel electrode formed in the opening region on the storage capacitor, the pixel electrode and the storage capacitor are in the non-opening region. In many cases, the pixel electrodes extend over the storage capacitor so as to overlap each other, and a connection means such as a contact hole for electrically connecting the pixel electrode and the storage capacitor is provided in the non-opening region (for example, patents) Reference 1).

JP 2005-301306 A

  However, when a higher image quality of the liquid crystal device by increasing the aperture ratio is desired, when the wiring width of the wiring in the non-opening region is narrowed and the size of various elements is reduced, the contact in the non-opening region There are problems in the manufacturing process and design that make it difficult to secure a space for providing connection means such as holes. More specifically, for example, when the width of the non-opening region is defined by the width of a wiring and a storage capacitor provided between adjacent pixels, the aperture ratio is simply reduced by narrowing the width of the wiring or the like. Even if it can be increased, the size of the contact hole to be formed and the margin in consideration of the alignment of the mask used to partially remove the insulating film when forming the contact hole. It is difficult to secure.

  Accordingly, the present invention has been made in view of the above-described problems and the like. For example, the present invention is an electro-optical device such as a liquid crystal device driven by an active matrix method, and ensures electrical connection between a storage capacitor and a pixel electrode. However, it is an object of the present invention to provide an electro-optical device substrate used in an electro-optical device capable of increasing the aperture ratio, an electro-optical device including such an electro-optical device substrate, and an electronic apparatus. .

In order to solve the above problems, an electro-optical device substrate according to the present invention is a substrate, a plurality of data lines and a plurality of scanning lines intersecting with each other on the substrate, the plurality of data lines and the plurality of data lines. A pixel electrode formed in each of the plurality of pixels defined corresponding to the intersection of the scanning lines and a non-opening region that separates the opening regions of the plurality of pixels from each other, and defines the opening region A conductive film having a convex portion protruding from a part of one of the plurality of region ends to the opening region side, and a first contact portion that electrically connects the pixel electrode and the convex portion to each other. Prepare.

The substrate for an electro-optical device according to the reference invention of the present application is, for example, a TFT array substrate disposed opposite to a counter substrate in order to sandwich a liquid crystal that is an example of an electro-optical material, or a TFT array substrate and the TFT array substrate. It is the plate-shaped structure which consists of a formed component. During the operation of the electro-optical device, a scanning signal is supplied to each pixel portion via the scanning line, and an image signal is supplied to the pixel electrode of each pixel via the data line. More specifically, for example, the gate of a semiconductor element such as a thin film transistor for pixel switching (hereinafter referred to as “TFT” as appropriate) provided for each pixel portion is electrically connected to the scanning line, and the scanning signal It is turned on / off according to The image signal is selectively supplied via a data line to a pixel electrode composed of a transparent electrode such as ITO. The tilt angle of an electro-optical material such as liquid crystal sandwiched between a counter electrode and a pixel electrode provided on the counter substrate is controlled by an electric field generated between these electrodes for each pixel. The amount of light transmitted through each pixel is controlled according to the change in the tilt angle, and an image is displayed by an electro-optical device such as an active matrix driven liquid crystal device.

  The conductive film is formed in a non-opening region that separates the opening regions of the plurality of pixels from each other, and has a protruding portion that protrudes from a part of one region end defining the opening region into the opening region. ing. Here, the “opening region” of the present invention is a region in a pixel through which light is substantially transmitted, for example, a region in which a pixel electrode is formed, such as a liquid crystal according to a change in transmittance. This is a region in which the gradation of the emitted light that has passed through the electro-optic material can be changed. In other words, the “opening region” is a light shielding body such as a wiring, a light shielding film, and various elements in which the light condensed on the pixel does not transmit the light or the light transmittance is relatively smaller than that of the transparent electrode. It means the area that is not obstructed by.

  The “non-opening region” in the present invention means a region where light contributing to display is not transmitted. For example, a region where a non-transparent wiring or electrode, or a light-shielding body such as various elements is provided in a pixel. means. The display performance of the electro-optical device provided with the electro-optical device substrate according to the present invention is improved as the aperture ratio, which means the ratio of the aperture region in the size of the pixel including the aperture region and the non-open region, is increased.

  One region end defining the opening region is defined by, for example, an edge of a wiring or an electrode formed in the non-opening region. Here, “a plurality of region ends” means, for example, when the opening region is rectangular, it means four sides that define the rectangular shape, and the plurality of region ends define the outer shape of the opening region. Each region end is not limited to a case where it extends in a straight line in a specific direction, and may have a concavo-convex shape along a direction that intersects the direction in which the region end extends to a greater or lesser extent.

In the electro-optical device substrate according to the reference invention of the present case, the area of the opening region is narrowed as compared with the case where the protruding portion is not provided because the protruding portion protrudes into the opening region. However, in the electro-optical device substrate according to the first aspect of the present invention, by projecting the convex portion from a part of one region end to the opening region, the one region end extends along the one region end. The width of the non-opening region in which the boundary with the opening region is formed by the other part of the region end can be reduced. More specifically, since the first contact portion is electrically connected to the convex portion as will be described later, the non-opening region extending at both sides of a part of the one region end at the one region end is the first contact portion. It is not necessary to secure a space for forming one contact portion, and accordingly, for example, a light shielding body such as a light-shielding wiring is narrowed on both sides of a part of one region end, and on each side of the convex portion. The width of the non-opening region can be narrowed, and the entire area of the opening region can be increased.

Therefore, according to the electro-optical device substrate according to the reference invention of the present invention , since the convex portion protrudes into the opening region, the substantial planar shape of the opening region does not become a rectangular shape accurately, but the convex portion is provided. The aperture ratio can be relatively increased as compared with the case where the electro-optical device is not provided, and the image quality of the electro-optical device including the electro-optical device substrate can be improved. In addition, even when the non-opening region is narrowed, a space margin required for performing the etching process for forming the first contact portion can be secured.

  The first contact portion is a connection means such as a contact hole that electrically connects the pixel electrode and the convex portion to each other. In the case where the conductive film is electrically connected to an electrode that forms part of an element such as a storage capacitor, the storage capacitor temporarily changes the potential of the pixel electrode in accordance with an image signal supplied to the pixel electrode. Can be maintained. In this case, the conductive film functions as a relay layer that electrically relays the storage capacitor and the pixel electrode, for example.

  Here, in the case where the storage capacitor electrode and the pixel electrode are electrically connected to each other without a conductive film, the storage capacitor electrode forms a contact portion for connection with the pixel electrode. As the width increases, the width of the non-opening region also increases. However, according to the present invention, by projecting the convex portion from the non-opening region to the opening region, for example, it is not necessary to expand the entire electrode of the storage capacitor in the opening region.

As described above, according to the electro-optical device substrate according to the present reference invention, while ensuring the electrical connection of the pixel electrodes and the conductive film, it is possible to improve the aperture ratio, according to the present invention The image quality of an electro-optical device such as a liquid crystal device provided with the electro-optical device substrate can be improved.

In one aspect of the electro-optical device substrate according to the reference invention of the present application , the first electrode formed in the non-opening region, the second electrode formed on the first electrode in the non-opening region, and the A dielectric capacitor sandwiched between the first electrode and the second electrode; a storage capacitor that temporarily holds a potential of the pixel electrode in accordance with an image signal supplied to the pixel electrode; The opening region may include a second contact portion that electrically connects the conductive film and the second electrode.

  According to this aspect, since the conductive film is electrically connected to each of the first contact portion and the second contact portion, it functions as a relay layer that relays the electrical connection between the storage capacitor and the pixel electrode.

  According to this aspect, it is possible to reduce the rate at which the opening region is narrowed, compared to the case where the second electrode and the second contact portion protruding from the opening region are directly connected. More specifically, the capacity of the storage capacitor is increased by patterning the first electrode and the second electrode so that the area where the first electrode and the second electrode overlap each other is larger, and the potential of the pixel electrode is maintained. While it is preferable to improve the holding performance, it is difficult to say that the projecting of the second electrode over the entire end of one region is a preferable design from the viewpoint of increasing the aperture ratio. Therefore, by electrically connecting the pixel electrode and the storage capacitor through the conductive film, a portion where the second electrode protrudes into the opening region can be reduced, and a decrease in the aperture ratio can be suppressed.

In another aspect of the electro-optical device substrate according to the present invention , the first electrode formed in the non-opening region, the second electrode formed on the first electrode in the non-opening region, and the A dielectric capacitor sandwiched between the first electrode and the second electrode; a storage capacitor that temporarily holds a potential of the pixel electrode in accordance with an image signal supplied to the pixel electrode; In the opening region, a second contact portion that electrically connects the pixel electrode and the second electrode may be provided.

  According to this aspect, the storage capacitor and the pixel electrode can be electrically connected without using the conductive film as the relay layer.

In another aspect of the electro-optical device substrate according to the reference invention of the present application , each of the first electrode and the second electrode may be a metal film.

  According to this aspect, the storage capacitor is a storage capacitor having a so-called MIM (Metal-Insulator-Metal) structure. The second electrode is, for example, a pixel potential side capacitor electrode electrically connected to the data line, and the first electrode is a fixed potential side capacitor electrode set to a fixed potential. Here, since the fixed potential side capacitor electrode normally extends over a plurality of pixels, the area of the first electrode is relatively larger than that of the second electrode. Therefore, by setting the first electrode and the second electrode as metal films, the power consumption consumed by the entire substrate for the electro-optical device can be reduced as compared with the case where these electrodes are configured using a semiconductor, and each pixel unit The device can be operated at high speed.

In order to solve the above-described problems, an electro-optical device substrate according to the present invention includes a data line extending in a first direction, a scanning line extending in a second direction intersecting the first direction, and the data line. And a pixel electrode formed in a pixel defined corresponding to the intersection of the scanning lines, a transistor provided corresponding to the pixel electrode, and the data line extending in the first direction. The semiconductor layer of the transistor and a part of the opening region of the pixel are defined, and the adjacent pixel electrode extends in the second direction and extends in the first direction so as to overlap the data line, A first capacitor electrode made of a light-shielding film provided so as to cover the channel region of the semiconductor layer, the first capacitor electrode and the first capacitor electrode are arranged to face each other with a dielectric film interposed therebetween , and overlap the first capacitor electrode. Extending in the first and second directions, A second capacitor electrode electrically connected via a contact hole formed to the drain region of the semiconductor layer so as to overlap with the serial data line, between the first capacitor electrode and the pixel electrode, the pixel A conductive film electrically connected to the electrode via the first contact portion and electrically connected to the second capacitor electrode via the second contact portion, the conductive film being viewed in plan The second capacitor electrode and the conductive film protrude in the first direction from one side of the first capacitor electrode extending in the second direction, and are formed in an island shape inside the second capacitor electrode. The first contact portion is provided in a region overlapping the first capacitor electrode, and the second contact portion is provided in a region overlapping the convex portion.
The region protruding in the first direction so as to overlap the data line of the first capacitor electrode is wider in the second direction than the region extending in the first direction of the second capacitor electrode. Is formed.

The first capacitor electrode is made of a metal film, and the second capacitor electrode is made of a semiconductor film.

  Since the first contact portion electrically connects the conductive film and the pixel electrode in the non-opening region, the opening region is not narrowed.

  The storage capacitor has a first electrode extending from the non-opening region to the opening region, and the convex portion and the first electrode are electrically connected by the second contact portion. Here, the convex portion protrudes from a part of one area end defining the opening area to the opening area, and the first electrode also extends from a part of one area end to the opening area. . Therefore, it is only necessary to extend the first electrode to the opening region only at the portion connected to the second contact portion, and the reduction in the aperture ratio can be reduced by extending the entire first electrode to the opening region. In addition, similarly to the electro-optical device substrate according to the first aspect of the present invention, the region extending on both sides of the second contact portion can be narrowed along the direction in which one region end extends in the non-opening region. Therefore, the aperture ratio can be increased.

Therefore, according to the electro-optical device substrate according to the present invention , the aperture ratio can be improved while ensuring the electrical connection of the pixel electrode, the conductive film, and the storage capacitor. The image quality of an electro-optical device such as a liquid crystal device including the electro-optical device substrate according to the invention can be improved.

In another aspect of the electro-optical device substrate according to the present invention, the protrusion may protrude from the center of the area end of the opening area defined by the first capacitor electrode on the opening region side.

  According to this aspect, it is possible to suppress deterioration in image quality due to the asymmetric shape of the planar shape of the opening region in the pixel.

In another aspect of the electro-optical device substrate according to the present invention , the convex portion is closer to the end of the region end than the center with respect to the center of the region end of the opening region defined by the first capacitor electrode. You may protrude from the side to the said opening area side .

  According to this aspect, by projecting the protrusion from the side closer to the end than the center of the one region end to the opening region, the center of the one region end according to the wiring or element layout formed in the non-opening region The conductive film and the pixel electrode can be electrically connected even when the convex portion cannot protrude from the opening region into the opening region.

In another aspect of the electro-optical device substrate according to the present invention , the convex portion may protrude from a corner of the opening region into the opening region.

  According to this aspect, the convex portion protrudes into the opening region from a portion where, for example, one region end and the other region end intersect, and the degree of freedom regarding the arrangement of the wiring and various elements in the non-opening region increases.

In another aspect of the electro-optic device substrate according to the present invention , the electro-optical device substrate includes a transistor having a source electrically connected to the data line and a gate electrically connected to the scan line, the first capacitor electrode, The second capacitor electrode may be disposed so as to cover the semiconductor layer of the transistor.

  According to this aspect, the light incident on the transistor can be blocked by the storage capacitor. Note that “directly above” means that the storage capacitor is arranged directly above the transistor without interposing another light shielding film. According to this aspect, since the storage capacitor is disposed directly above the transistor, it is possible to block incident light incident at a large angle with respect to the normal direction of the semiconductor layer of the transistor, and light leakage current in the transistor Can be reduced.

In another aspect of the electro-optical device substrate according to the present invention , the conductive film may be formed in the same layer as the data line.

  According to this aspect, for example, a thin film made of a conductive material is formed on a layer on which a data line is provided using a thin film forming method, and the data line and the conductive film are removed by partially removing the thin film. It can be formed in a state of being separated from each other. According to this aspect, since the data line and the conductive film can be formed in the same process, the manufacturing process can be simplified.

  In order to solve the above-described problems, an electro-optical device according to the present invention includes the above-described electro-optical device substrate according to the present invention.

  According to the electro-optical device according to the present invention, since the electro-optical device substrate described above is provided, an electro-optical device having excellent display performance can be provided.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device of the present invention.

  According to the electronic apparatus according to the present invention, since the electro-optical device according to the present invention described above is provided, a projection display device, a mobile phone, an electronic notebook, a word processor, and a viewfinder type capable of high-quality display. Alternatively, various electronic devices such as a monitor direct-view video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized. In addition, as an electronic apparatus according to the present invention, for example, an electrophoretic device such as electronic paper can be realized.

  Such an operation and other advantages of the present invention will become apparent from the embodiments described below.

  Embodiments of an electro-optical device substrate, an electro-optical device, and an electronic apparatus according to first and second aspects of the present invention will be described below with reference to the drawings.

(First embodiment)
<1-1: Overall Configuration of Electro-Optical Device>
First, embodiments of an electro-optical device substrate and an electro-optical device including the same according to a first invention of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view of the electro-optical device when the TFT array substrate is viewed from the counter substrate side together with the components formed thereon, and FIG. 2 is a cross-sectional view taken along line HH ′ of FIG. In this embodiment, as an example of an electro-optical device, a TFT active matrix driving type liquid crystal device with a built-in driving circuit is taken as an example.

  1 and 2, in the liquid crystal device 1, a TFT array substrate 10 and a counter substrate 20 are disposed to face each other. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are positioned around an image display region 10a that is a pixel region in which a plurality of pixel portions are provided. They are bonded to each other by a sealing material 52 provided in the sealing area.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. In the sealing material 52, a gap material such as glass fiber or glass beads for dispersing the distance (inter-substrate gap) between the TFT array substrate 10 and the counter substrate 20 to a predetermined value is dispersed. The liquid crystal device 1 of this embodiment is small and suitable for performing enlarged display for a light valve of a projector.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area where the sealing material 52 is disposed. However, part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side. There is a peripheral area located around the image display area 10a. In other words, particularly in the present embodiment, when viewed from the center of the TFT array substrate 10, the distance from the frame light shielding film 53 is defined as the peripheral region.

  A data line driving circuit 101 and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 in a region located outside the sealing region in which the sealing material 52 is disposed in the peripheral region. The scanning line driving circuit 104 is provided along two sides adjacent to the one side so as to be covered with the frame light shielding film 53. Further, in order to connect the two scanning line driving circuits 104 provided on both sides of the image display area 10 a in this way, a plurality of the pixel lines are covered along the remaining side of the TFT array substrate 10 and covered with the frame light shielding film 53. Wiring 105 is provided.

  Vertical conductive members 106 functioning as vertical conductive terminals between the two substrates are disposed at the four corners of the counter substrate 20. On the other hand, the TFT array substrate 10 is provided with vertical conduction terminals in a region facing these corner portions. Thus, electrical conduction can be established between the TFT array substrate 10 and the counter substrate 20.

  In FIG. 2, on the TFT array substrate 10, an alignment film is formed on the pixel electrode 9a after the pixel switching TFT, the scanning line, the data line and the like are formed. On the other hand, on the counter substrate 20, in addition to the counter electrode 21, a lattice-shaped or striped light-shielding film 23 and an alignment film are formed on the uppermost layer portion. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films.

  The TFT array substrate 10 is a transparent substrate such as a quartz substrate, a glass substrate, or a silicon substrate. The counter substrate 20 is also a transparent substrate like the TFT array substrate 10.

  The TFT array substrate 10 is provided with a pixel electrode 9a, and an alignment film on which a predetermined alignment process such as a rubbing process has been performed is provided above the pixel electrode 9a. For example, the pixel electrode 9a is made of a transparent conductive film such as an ITO (Indium Tin Oxide) film, and the alignment film is made of an organic film such as a polyimide film.

  A counter electrode 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 subjected to a predetermined alignment process such as a rubbing process is provided below the counter electrode 21. The counter electrode 21 is made of a transparent conductive film such as an ITO film, for example. The alignment film 22 is made of an organic film such as a polyimide film.

  The counter substrate 20 may be provided with a lattice-shaped or striped light-shielding film. By adopting such a configuration, in addition to the upper light shielding film provided as the upper capacitor electrode 300, it is possible to more reliably prevent the incident light from entering the channel region 1a ′ or its periphery from the TFT array substrate 10 side. Can do.

  A liquid crystal layer 50 is formed between the TFT array substrate 10 and the counter substrate 20 that are configured as described above and are arranged so that the pixel electrode 9a and the counter electrode 21 face each other. The liquid crystal layer 50 takes a predetermined alignment state by the alignment film in a state where an electric field from the pixel electrode 9a is not applied.

  1 and 2, on the TFT array substrate 10, in addition to the drive circuits such as the data line drive circuit 101 and the scanning line drive circuit 104, the image signal on the image signal line is sampled to obtain data. Sampling circuit that supplies lines, precharge circuit that supplies pre-charge signals of a predetermined voltage level to multiple data lines in advance of image signals, inspection of quality, defects, etc. of the electro-optical device during production or shipment An inspection circuit or the like may be formed.

<1-2: Electrical Connection Configuration of Pixel Unit>
Next, the electrical connection configuration of the pixel portion of the liquid crystal device 1 will be described in detail with reference to FIG. FIG. 3 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix that forms the image display area of the liquid crystal device 1.

  In FIG. 3, a pixel electrode 9 a and a TFT 30 which is an example of the “transistor” of the present invention are formed in each of a plurality of pixels formed in a matrix constituting the image display region 10 a of the liquid crystal device 1. . The TFT 30 is electrically connected to the pixel electrode 9a, and performs switching control of the pixel electrode 9a when the liquid crystal device 1 operates. The data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. May be.

  The scanning line 3a is electrically connected to the gate of the TFT 30, and the liquid crystal device 1 sequentially applies the scanning signals G1, G2,..., Gm to the scanning line 3a in a pulse sequence in this order at a predetermined timing. It is comprised so that it may apply. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,... Supplied from the data line 6a is closed by closing the switch of the TFT 30 serving as a switching element for a certain period. Sn is written at a predetermined timing. A predetermined level of image signals S1, S2,..., Sn written in the liquid crystal as an example of the electro-optical material via the pixel electrode 9a is held for a certain period with the counter electrode formed on the counter substrate. The

  The liquid crystal constituting the liquid crystal layer 50 modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The transmittance with respect to light is increased, and light having a contrast corresponding to an image signal is emitted from the liquid crystal device 1 as a whole. In order to prevent the image signal held here from leaking, an example of the “holding capacitor” according to the first aspect of the present invention in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. A certain storage capacitor 70a is electrically connected. Thereby, the potential holding characteristic in the pixel electrode 9a is improved, and display characteristics such as contrast and flicker can be improved.

<1-3: Specific Configuration of Pixel Unit>
Next, a specific configuration of the pixel portion will be described with reference to FIGS. FIG. 4 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes and the like are formed. 5 is a cross-sectional view taken along the line VV ′ of FIG. 6 is a cross-sectional view taken along the line VI-VI ′ of FIG. 4 to 6, the scale of each layer / member is different for each layer / member so that each layer / member can be recognized on the drawing. In FIGS. 5 and 6, for convenience of explanation, illustration of a portion located above the pixel electrode 9 a is omitted. In FIG. 5, the portion from the TFT array substrate 10 to the pixel electrode 9a is an example of the “substrate for the electro-optical device” according to the first aspect of the present invention.

  4 and 5, on the TFT array substrate 10 of the liquid crystal device 1, a plurality of transparent pixel electrodes 9a are provided in a matrix in the X and Y directions in the figure. A plurality of data lines 6a and a plurality of scanning lines 3a are provided along each of the boundaries.

  In the semiconductor layer 1a, the scanning line 3a is disposed so as to face the channel region 1a 'indicated by the hatched region rising to the right in FIG. A pixel switching TFT 30 is provided at each of the locations where the scanning line 3a and the data line 6a intersect each other.

  The data line 6a is formed using the second interlayer insulating film 42 shown in FIG. 5 whose upper surface is flattened as a base, and is connected to the high concentration source region 1d of the TFT 30 included in the semiconductor layer 1a through the contact hole 81a. Electrically connected. The data line 6a and the inside of the contact hole 81a are made of, for example, an Al (aluminum) -containing material such as Al—Si—Cu or Al—Cu, or a single Al layer, or a multilayer film including an Al layer and a TiN layer. The data line 6a also has a function of shielding the TFT 30 from light.

  The storage capacitor 70 includes a lower capacitor electrode 71m which is an example of the “first electrode” according to the first invention of the present invention, and an upper capacitor electrode which is an example of the “second electrode” according to the first invention of the present invention. 300 is disposed so as to be opposed to each other through the dielectric film 75a.

  The upper capacitor electrode 300 is a pixel potential side capacitor electrode electrically connected to the high concentration drain region 1e of the TFT 30 and the pixel electrode 9a. More specifically, the upper capacitor electrode 300 is a “conductive film” according to the first invention of the present invention through a contact hole 84a which is an example of the “second contact part” according to the first invention of the present invention. The relay layer 93 is electrically connected to the relay layer 93, and relays the electrical connection between the high-concentration drain region 1 e and the pixel electrode 9 a together with the relay layer 93.

  The upper capacitor electrode 300 is a metal film provided on the upper side of the TFT 30 including, for example, a metal or an alloy. The upper capacitor electrode 300 also functions as an upper light shielding film (built-in light shielding film) that shields the TFT 30. The upper capacitor electrode 300 is formed including a metal such as Al (aluminum) or Ag (silver). The upper capacitor electrode 300 includes at least one of refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), Mo (molybdenum), and Pd (palladium). Further, it may be composed of a simple metal, an alloy, a metal silicide, a polysilicide, or a laminate of these.

  The lower capacitor electrode 71m extends from the image display area 10a where the pixel electrode 9a is disposed to the periphery thereof. The lower capacitor electrode 71m is a fixed potential side capacitor electrode that is electrically connected to a constant potential source and maintained at a fixed potential.

  The lower capacitor electrode 71m is also a metal film like the upper capacitor electrode 300. Therefore, the storage capacitor 70a is configured as a so-called MIM (Metal-Insulator-Metal) structure having a three-layer structure of metal film-dielectric film-metal film. Here, the lower capacitor electrode 71m extends over a plurality of pixels and is shared by the plurality of pixels. In the present embodiment, by forming the lower capacitor electrode 71m as a metal film, the entire liquid crystal device 1 is consumed when the liquid crystal device 1 is driven as compared with the case where the lower capacitor electrode 71m is configured using a semiconductor. Power consumption can be reduced, and high-speed operation of elements in each pixel portion can be achieved.

  The dielectric film 75a is made of, for example, a silicon oxide film such as an HTO (High Temperature Oxide) film, an LTO (Low Temperature Oxide) film, or a silicon nitride film.

  The lower light-shielding film 11a provided in a lattice pattern below the TFT 30 via the base insulating film 12 shields the channel region 1a ′ of the TFT 30 and its surroundings from the return light that enters the device from the TFT array substrate 10 side. To do. Similarly to the upper capacitor electrode 300 and the lower capacitor electrode 71m, the lower light-shielding film 11a is, for example, a single metal containing at least one of refractory metals such as Ti, Cr, W, Ta, Mo, and Pd. It consists of an alloy, metal silicide, polysilicide, or a laminate of these.

  In addition to the function of interlayer insulating the TFT 30 from the lower light-shielding film 11a, the base insulating layer 12 is formed on the entire surface of the TFT array substrate 10, thereby remaining rough after polishing the surface of the TFT array substrate 10 or after cleaning. It has a function of preventing deterioration of the characteristics of the pixel switching TFT 30 due to dirt or the like.

  The pixel electrode 9a is electrically connected to the high-concentration drain region 1e in the semiconductor layer 1a via the upper capacitor electrode 300, contact holes 83a, 84a and 85a, and the relay layer 93. The contact hole 85a is an example of the “first contact portion” in the present invention, and a conductive material constituting the pixel electrode 9a such as ITO is formed on the inner wall of the hole formed so as to penetrate the third interlayer insulating layer 43. It is formed by forming a film.

  In FIG. 5, the TFT 30 has a two-layer insulation that insulates the scanning region 3a and the semiconductor layer 1a from the channel region 1a ′ of the semiconductor layer 1a in which a channel is formed by an electric field from the scanning line 3a shared as a gate electrode. A gate insulating film 2 including films 2a and 2b. The semiconductor layer 1a has an LDD (Lightly Doped Drain) structure including a low concentration source region 1b, a low concentration drain region 1c, a high concentration source region 1d, and a high concentration drain region 1e. The low-concentration source region 1b, the low-concentration drain region 1c, the high-concentration source region 1d, and the high-concentration drain region 1e constitute an impurity region of the semiconductor layer 1a and are formed in mirror symmetry on both sides of the channel region 1a ′. Yes.

  Since the storage capacitor 70a is disposed immediately above the TFT 30 with the first interlayer insulating film 41 interposed therebetween, the storage capacitor 70a extends from the normal direction of the semiconductor layer 1a of the TFT 30 to the normal direction along the direction in which the semiconductor layer 1a extends. Therefore, it is possible to block incident light incident on the semiconductor layer 1a at a large angle, and to reduce light leakage current generated in the semiconductor layer 1a. Therefore, the off-current flowing through the low-concentration source region 1b and the low-concentration drain region 1c when the TFT 30 is not operating can be reduced, and the decrease in the on-current flowing when the TFT 30 is operating can be suppressed. Therefore, the liquid crystal device 1 can display an image with high quality during its operation.

  On the scanning line 3a, a first interlayer insulating film 41 in which a contact hole 81a leading to the high concentration source region 1d and a contact hole 83a leading to the high concentration drain region 1e are respectively formed is formed. A lower capacitor electrode 71m and an upper capacitor electrode 300 are formed on the first interlayer insulating film 41, and a second interlayer insulating film 42 having a contact hole 81a formed thereon is formed thereon. A third interlayer insulating film 43 in which contact holes 85a are formed is formed so as to cover the entire surface of the second interlayer insulating film 42 and the relay layer 93 from above the data line 6a. The pixel electrode 9 a and an alignment film (not shown) are provided on the upper surface of the third interlayer insulating film 43.

  The relay layer 93 is formed on the second interlayer insulating film 42 in the same layer as the data line 6a. For the data line 6a and the relay layer 93, a thin film made of a conductive material such as a metal film is formed on the second interlayer insulating film 42 by using a thin film forming method, and the thin film is partially removed. It forms in the state mutually spaced apart by patterning. Therefore, since the data line 6a and the relay layer 93 can be formed in the same process, the manufacturing process of the liquid crystal device 1 can be simplified.

  In FIG. 4, a scanning line 3a, a data line 6a, a storage capacitor 70a, a lower light shielding film 11a, a relay layer 93, and a TFT 30 are seen on the TFT array substrate 10 in plan view, and each pixel corresponding to the pixel electrode 9a. It is arranged in a non-opening region surrounding the opening region (that is, a region where light actually contributing to display is transmitted or reflected in each pixel). That is, the scanning lines 3a, the storage capacitors 70a, the data lines 9a, the lower light shielding film 11a, and the TFTs 30 are arranged not in the opening area of each pixel but in the non-opening area so as not to disturb the display. Yes.

  Next, the arrangement of the relay layer 93 will be described in detail with reference to FIGS. 4 and 6.

  In FIG. 4, the opening region has a substantially rectangular planar shape with the edges of the upper capacitor electrode 300, the lower capacitor electrode 71 m and the lower light shielding film 11 a as the region ends in the pixel. For example, one region end 190 of four region ends that define one opening region is defined by edges 300e and 71me of portions where the upper capacitor electrode 300 and the lower capacitor electrode 71m extend in the X direction. The relay layer 93 has a convex portion 93a that protrudes from the non-opening region to the opening region. The convex portion 93a protrudes from the center of the region end 190 to the opening region.

  Here, the area of the opening region is narrowed compared to the case where the protruding portion 93a is not provided because the protruding portion 93a protrudes into the opening region. However, in the present embodiment, by projecting the convex portion 93a from a part of the region end 190 (for example, the center of the region end 190) to the opening region, the center of the region end 190 in the region end 190 is aligned along the X direction. The width of the non-opening region in which the boundary with the opening region is formed by other portions can be reduced. More specifically, since the contact hole 85a is electrically connected to the convex portion 93a as described later, the contact hole 85a is formed in the non-opening region extending to both sides of the center of the region end 190 at the region end 190. It is not necessary to secure a space for formation, and accordingly, a light shielding body such as a wiring formed in the non-opening region can be narrowed on both sides of the center of the region end 190. Therefore, the width of the non-opening region can be narrowed on both sides of the convex portion 93a, and the area of the entire opening region can be increased.

  According to the relay layer 93, since the convex part 93a protrudes into the opening region, the substantial planar shape of the opening region does not become a rectangular shape accurately. However, according to the relay layer 93, the aperture ratio can be relatively increased as compared with the case where the convex portion 93a is not provided, and the image quality of the liquid crystal device 1 can be improved. In addition, even when the non-opening region is narrowed, a margin of a space necessary for performing a removal process such as an etching process when the contact hole 85a is formed by partially removing the third interlayer insulating film 43. Can also be secured.

  In this embodiment, since the convex part 93a protrudes from the center of the area | region edge 190 to an opening area | region, it can suppress that a picture quality falls by the planar shape of an opening area | region becoming an asymmetrical shape in a pixel.

  Next, an electrical connection structure between the pixel electrode 9a and the upper capacitor electrode 300 will be described in detail with reference to FIG.

  In FIG. 6, the contact hole 85a is an example of a connection means for electrically connecting the pixel electrode 9a and the convex portion 93a to each other. The convex portion 93a constitutes a part of the relay layer 93 and protrudes from the non-opening region to the opening region. In the non-opening region, the relay layer 93 is electrically connected to the upper capacitor electrode 300 through the contact hole 84a. Therefore, the storage capacitor 70a is electrically connected to the pixel electrode 9a. The storage capacitor 70a can temporarily maintain the potential of the pixel electrode 9a in accordance with the image signal supplied to the pixel electrode 9a.

  Here, when the upper capacitor electrode 300 and the pixel electrode 9a are electrically connected to each other without the relay layer 93, the upper capacitor electrode 300 overlaps the pixel electrode 9a so as to narrow the opening region. . More specifically, the upper capacitor electrode 300 and the pixel electrode 9a overlap each other so that a space for forming a contact portion that electrically connects the upper capacitor electrode 300 and the pixel electrode 9a can be secured. growing. When such an overlapping portion increases, the width of the non-opening region defined by the edge of the upper capacitor electrode 300 also increases, and the opening region is relatively narrowed. Therefore, in the present embodiment, as described above, the reduction of the opening area can be suppressed as much as possible by electrically connecting the upper capacitor electrode 300 and the pixel electrode 9a to each other via the convex portion 93a. It is possible to widen the opening area.

  In addition, according to the contact hole 84a, for example, compared to a case where the upper capacitor electrode 300 protruding into the opening region and the contact hole 85a formed so as to penetrate the second interlayer insulating film 42 are directly connected. The ratio by which the opening area is narrowed can be reduced. More specifically, the capacity of the storage capacitor 70a is increased by patterning the upper capacitor electrode 300 and the lower capacitor electrode 71m so that the area where the upper capacitor electrode 300 and the lower capacitor electrode 71m overlap each other is increased. While it is preferable to improve the holding performance for holding the potential of the electrode 9a, overhanging the upper capacitive electrode 300 over the entire region end 190 is said to be a preferable design from the viewpoint of increasing the aperture ratio. hard. Therefore, by electrically connecting the pixel electrode 9a and the storage capacitor 70a to each other via the relay layer 93, a portion where the upper capacitor electrode 300 protrudes into the opening region can be reduced, and a decrease in the aperture ratio can be suppressed. It becomes possible.

  As described above, according to the electro-optical device substrate according to the present embodiment, the aperture ratio can be improved while ensuring the electrical connection between the pixel electrode 9a and the storage capacitor 70a. Therefore, according to the liquid crystal device 1 according to the present embodiment, a high-quality image can be displayed.

(Modification 1)
Next, a modification of the relay layer 93 in the pixel will be described with reference to FIG. FIG. 7 is a modification of the plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes and the like are formed. In the following description, the same reference numerals are assigned to portions common to the liquid crystal device 1 described above, and detailed description thereof is omitted.

  In FIG. 7, in the liquid crystal device of this example, the relay layer 93 has a protrusion 93 aa that protrudes into the opening region from the side closer to the end than the center of the region end 190 along the X direction. According to the convex portion 93aa, a part of the relay layer 93 cannot be protruded from the center of one region end to the opening region according to the layout of the elements such as the wiring formed in the non-opening region and the storage capacitor 70a. However, the relay layer 93 and the pixel electrode 9a can be electrically connected through the convex portion 93aa.

(Modification 2)
Next, another example of the modification of the relay layer 93 in the pixel will be described with reference to FIG. FIG. 8 is a modification of the plan view of a plurality of pixel groups adjacent to each other on the TFT array substrate 10 on which the data lines 6a, the scanning lines 3a, the pixel electrodes 9a, and the like are formed.

  In FIG. 8, the convex part 93ab which protrudes from the relay layer 93 to the opening region protrudes from the corner of the opening region having a substantially rectangular shape to the opening region. More specifically, the convex portion 93ab protrudes into the opening region from a portion where the region end 190 and another region end that intersects the region end 190 intersect each other (that is, the corner of the opening region). Therefore, the convex portion 93ab is not limited to the case where it protrudes from the center of the region end 190 or the portion close to the end to the opening region, and is arranged according to the arrangement of various elements such as wirings and storage capacitors in the non-opening region. The position can be changed for convenience. Therefore, the degree of freedom regarding the arrangement of various elements such as wiring and storage capacitors in the non-opening region is increased.

(Second Embodiment)
Next, embodiments of the electro-optical device substrate and the electro-optical device including the same according to the second invention of the present invention will be described with reference to FIGS. 9 to 11. FIG. 9 is a plan view of a plurality of adjacent pixel groups on the TFT array substrate 10 on which the data lines 6a, the scanning lines 3a, the pixel electrodes 9a, and the like are formed. 10 is a cross-sectional view taken along the line XX ′ of FIG. 11 is a cross-sectional view taken along the line XI-XI ′ of FIG.

  9 to 11, as in FIGS. 4 to 6, in order to make each layer and each member recognizable on the drawing, the scale is different for each layer and each member. In FIGS. 10 and 11, for convenience of explanation, illustration of a portion located above the pixel electrode 9 a is omitted, and portions common to the liquid crystal device 1 according to the first embodiment are denoted by common reference numerals. . In FIG. 10, the portion from the TFT array substrate 10 to the pixel electrode 9a is an example of the “substrate for the electro-optical device” according to the second aspect of the present invention.

  9 and 10, the liquid crystal device according to this embodiment includes a relay layer 93 which is an example of the “conductive film” according to the second invention of the present invention, and the “retention capacitor” according to the second invention of the present invention. It is an example of a storage capacitor 70b as an example, a contact hole 85b as an example of a "first contact part" according to the second invention of the present invention, and a "second contact part" according to the second invention of the present invention. A contact hole 84b is provided.

  The storage capacitor 70b includes a lower capacitor electrode 71s extending from the non-opening region to the opening region, an upper capacitor electrode 300, and a dielectric film 75b sandwiched between these electrodes. The upper capacitor electrode 300 is a fixed potential side capacitor electrode, and the lower capacitor electrode 71s is a pixel potential side capacitor electrode electrically connected to the high concentration drain region 1e of the TFT 30 through the contact hole 83b. The lower capacitor electrode 71s is formed of a semiconductor layer such as polysilicon. Therefore, the storage capacitor 70b has a so-called MIS (Metal-Insulator-Semiconductor) structure. The lower capacitor electrode 71 s has a function as a light absorption layer or a light shielding film disposed between the upper capacitor electrode 300 as the upper light shielding film and the TFT 30 in addition to the function as the pixel potential side capacitive electrode. The data line 6a is electrically connected to the high concentration source region 1d through a contact hole 81b that penetrates the first interlayer insulating film 41, the insulating film 61, and the second interlayer insulating film. An insulating film 61 is partially interposed between the first interlayer insulating film 41 and the second interlayer insulating film 42.

  As shown in FIG. 9, the lower capacitor electrodes 71s are separated from each other for each pixel. Therefore, the image signal supplied via the data line 6 a is supplied for each pixel in accordance with the switching operation of the TFT 30. The upper capacitor electrode 300 extends to a plurality of pixels along the X direction in FIG. Therefore, the upper capacitor electrode 300 is shared by a plurality of pixels, so that the electrode area is larger than that of the lower capacitor electrode 71s.

  However, since the upper capacitor electrode 300 is made of a metal film such as Al, an increase in electrical resistance due to an increase in electrode area can be suppressed as compared with the case where the upper capacitor electrode is formed of a semiconductor. Therefore, power consumption during operation of the liquid crystal device can be reduced, and various elements in each pixel can be driven at high speed, and there is an advantage that deterioration in responsiveness when an image is displayed by the liquid crystal device can be suppressed. Such an advantage is not limited to the case where the upper capacitor electrode 300 is formed so as to extend over pixels adjacent to each other along the Y direction in the drawing as in the present embodiment. Appears more prominently when it is formed over a plurality of pixels so as to occupy a larger area in the image display region 10a.

  Since the contact hole 85b electrically connects the relay layer 93 and the pixel electrode 9a in the non-opening region, the opening region is not narrowed.

  A region end 190 that is one of a plurality of region ends that define the opening region is defined by an edge 300 e of the upper capacitor electrode 300. The protrusion 93a protrudes from a part of the region end 190 to the opening region, and the lower capacitor electrode 71s also extends from a part of the region end 190 to the opening region. Therefore, the lower capacitor electrode 71s only needs to extend the portion connected to the contact hole 84b to the opening region, and the lowering of the aperture ratio can be reduced by extending the entire lower capacitor electrode 71s to the opening region. . In addition, as in the first embodiment, the non-opening region extending on both sides of the contact hole 84b along the X direction in the non-opening region can be narrowed, so that the aperture ratio can be increased.

  Therefore, according to the liquid crystal device according to the present embodiment, the aperture ratio can be improved while ensuring the electrical connection of the pixel electrode 9a, the relay layer 93, and the storage capacitor 70b, and the liquid crystal device displays. It is possible to improve the image quality.

  Next, an electrical connection structure between the pixel electrode 9a and the lower capacitor electrode 71s will be described in detail with reference to FIG.

  In FIG. 11, the lower capacitor electrode 71 s has a first portion 71 sa that extends from the non-opening region to the opening region and does not overlap the upper capacitor electrode 300. The relay layer 93 has a convex portion 93a that protrudes from the non-opening region to the opening region.

  The contact hole 84b electrically connects the first portion 71sa and the relay layer 93 to each other. The contact hole 85b electrically connects the pixel electrode 9a and the relay layer 93. Therefore, an image signal is supplied to the pixel electrode 9a through the lower capacitor electrode 71s electrically connected to the drain of the TFT 30 formed in the non-opening region, and image display is performed.

  As described above, according to the electro-optical device such as a liquid crystal device including the electro-optical device substrate according to the present embodiment, the potential of the pixel electrode 9a can be temporarily held by the storage capacitor and the aperture ratio is increased. Therefore, a high-quality image can be displayed.

  In the present embodiment as well, as in the first embodiment, the convex portion 93a is located from the center of the region end 190, the side close to the end with respect to the center of the region end 190, and the corner of the opening region. Needless to say, an improvement in the aperture ratio can be realized by projecting the convex portion 93a into the opening region. In addition, since the storage capacitor 70b is provided immediately above the TFT 30, light that is incident on the semiconductor layer 1a obliquely at a large angle with respect to the normal direction of the semiconductor layer 1a can be shielded by the storage capacitor 70b. Further, since the relay layer 93 is formed in the same layer as the data line 6a, the manufacturing process of the liquid crystal device becomes simple.

(Electronics)
Next, the case where the liquid crystal device described above is applied to various electronic devices will be described with reference to FIG. The electronic apparatus according to the present embodiment is a projector that uses the liquid crystal device described above as a light valve. FIG. 12 is a plan view illustrating a configuration example of a projector that is an example of an electronic apparatus including the above-described liquid crystal device. As shown in FIG. 12, a projector 1100 has a lamp unit 1102 made of a white light source such as a halogen lamp. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In this dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Accordingly, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  Here, paying attention to the display images by the liquid crystal panels 1110R, 1110B, and 1110G, the display image by the liquid crystal panel 1110G is horizontally reversed with respect to the display images by the liquid crystal panels 1110R and 1110B. Since light corresponding to the primary colors R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide a color filter.

  In addition, according to the electronic apparatus according to the present embodiment, since the liquid crystal device described above is included, a projection display device, a mobile phone, an electronic notebook, which is capable of high-quality display and has a small size, Various electronic devices such as a word processor, a viewfinder type or a monitor direct-view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized.

FIG. 3 is a plan view of the electro-optical device according to the first embodiment of the present invention viewed from the counter substrate side together with each component formed on the TFT array substrate. It is H-H 'sectional drawing of FIG. 3 is an equivalent circuit of various elements and wirings in a plurality of pixels of the electro-optical device according to the first embodiment of the invention. 2 is a plan view of a plurality of adjacent pixel groups on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in the electro-optical device according to the first embodiment of the invention. FIG. FIG. 5 is a V-V ′ sectional view of FIG. 4. FIG. 6 is a sectional view taken along line VI-VI ′ of FIG. 4. FIG. 9 is a plan view showing a modification example (No. 1) of a plurality of pixel groups adjacent to each other on the TFT array substrate in the first embodiment of the present invention. FIG. 6 is a plan view showing a modification (No. 2) of a plurality of pixel groups adjacent to each other in the TFT array substrate in the first embodiment of the present invention. FIG. 10 is a plan view of a plurality of adjacent pixel groups on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in an electro-optical device according to a second embodiment of the invention. FIG. 10 is a cross-sectional view taken along the line X-X ′ of FIG. 9. FIG. 10 is a sectional view taken along line XI-XI ′ of FIG. 9. FIG. 6 is a plan view illustrating an example of an electronic apparatus including the electro-optical device according to the embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Liquid crystal device, 1a ... Semiconductor layer, 2 ... Gate insulating film, 3a ... Scan line, 6a ... Data line, 10 ... TFT array substrate, 11a ... Lower side light shielding film, 70a, 70b ... Storage capacity, 71m, 71s ... Lower capacitive electrode, 75a, 75b ... dielectric film, 93 ... relay layer, 300 ... upper capacitive electrode.

Claims (9)

A data line extending in a first direction;
A scanning line extending in a second direction intersecting the first direction;
A pixel electrode formed on a pixel defined corresponding to an intersection of the data line and the scanning line;
A transistor provided corresponding to the pixel electrode;
A semiconductor layer of the transistor extending in the first direction so as to overlap the data line;
Defining a part of the opening region of the pixel, extending between adjacent pixel electrodes in the second direction and extending in the first direction so as to overlap the data line, and forming a channel region of the semiconductor layer A first capacitance electrode made of a light shielding film provided so as to cover ;
A contact hole disposed opposite to the first capacitor electrode through a dielectric film , extending in the first and second directions so as to overlap the first capacitor electrode and overlapping the data line. A second capacitor electrode electrically connected to the drain region of the semiconductor layer via
The pixel electrode and the first capacitor electrode are electrically connected through the first contact portion and the pixel electrode are electrically connected through the second contact portion. A conductive film,
The conductive film is formed in an island shape on the inner side of the second capacitor electrode when seen in a plan view, and the second capacitor electrode and the conductive film are each a first capacitor electrode extending in the second direction. A convex portion protruding in the first direction from one side ,
The electro-optical device substrate according to claim 1, wherein the first contact portion is provided in a region overlapping with the first capacitor electrode, and the second contact portion is provided in a region overlapping with the convex portion. The region protruding in the first direction so as to overlap the data line of the first capacitor electrode is formed wider in the second direction than the region extending in the first direction of the second capacitor electrode. The substrate for an electro-optical device according to claim 1, wherein the substrate is an electro-optical device. The electro-optical device substrate according to claim 1, wherein the first capacitor electrode is made of a metal film, and the second capacitor electrode is made of a semiconductor film. 2. The electro-optical device substrate according to claim 1, wherein the convex portion protrudes from the center of the region end of the opening region defined by the first capacitor electrode toward the opening region. The convex portion protrudes from the center closer to the end of the region end to the opening region side with respect to the center of the region end of the opening region defined by the first capacitor electrode. The substrate for an electro-optical device according to claim 1. The electro-optical device substrate according to claim 1, wherein the convex portion protrudes from a corner of the opening region into the opening region. The electro-optical device substrate according to claim 1, wherein the conductive film is formed in the same layer as the data line. An electro-optical device comprising the electro-optical device substrate according to claim 1. An electronic apparatus comprising the electro-optical device according to claim 8.

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