JP4586469B2 - メモリ制御装置、メモリ制御方法、プログラム - Google Patents

メモリ制御装置、メモリ制御方法、プログラム Download PDF

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Publication number
JP4586469B2
JP4586469B2 JP2004268300A JP2004268300A JP4586469B2 JP 4586469 B2 JP4586469 B2 JP 4586469B2 JP 2004268300 A JP2004268300 A JP 2004268300A JP 2004268300 A JP2004268300 A JP 2004268300A JP 4586469 B2 JP4586469 B2 JP 4586469B2
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JP2004268300A
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JP2006085342A5 (enExample
JP2006085342A (ja
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健一 中西
暢宏 金子
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Sony Corp
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Sony Corp
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Priority to JP2004268300A priority Critical patent/JP4586469B2/ja
Priority to US11/220,040 priority patent/US8060684B2/en
Publication of JP2006085342A publication Critical patent/JP2006085342A/ja
Publication of JP2006085342A5 publication Critical patent/JP2006085342A5/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Memory System (AREA)
  • Read Only Memory (AREA)
JP2004268300A 2004-09-15 2004-09-15 メモリ制御装置、メモリ制御方法、プログラム Expired - Fee Related JP4586469B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004268300A JP4586469B2 (ja) 2004-09-15 2004-09-15 メモリ制御装置、メモリ制御方法、プログラム
US11/220,040 US8060684B2 (en) 2004-09-15 2005-09-06 Memory control apparatus, memory control method and program

Applications Claiming Priority (1)

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JP2004268300A JP4586469B2 (ja) 2004-09-15 2004-09-15 メモリ制御装置、メモリ制御方法、プログラム

Publications (3)

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JP2006085342A JP2006085342A (ja) 2006-03-30
JP2006085342A5 JP2006085342A5 (enExample) 2007-06-28
JP4586469B2 true JP4586469B2 (ja) 2010-11-24

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JP2004268300A Expired - Fee Related JP4586469B2 (ja) 2004-09-15 2004-09-15 メモリ制御装置、メモリ制御方法、プログラム

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US (1) US8060684B2 (enExample)
JP (1) JP4586469B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100703807B1 (ko) * 2006-02-17 2007-04-09 삼성전자주식회사 블록 방식의 메모리에서 데이터의 변경 유형에 따라 블록을관리하는 방법 및 장치
JP2007241539A (ja) * 2006-03-07 2007-09-20 Hitachi Systems & Services Ltd 半導体フラッシュメモリにおけるデータ管理及び制御システムと半導体フラッシュメモリ収容装置
KR100845137B1 (ko) * 2006-10-02 2008-07-09 삼성전자주식회사 메모리 장치의 배드 블록 주소를 번역하는 방법, 메모리장치의 배드 블록 주소를 번역하는 장치 및 이를 포함하는메모리 장치 컨트롤러
US8745315B2 (en) * 2006-11-06 2014-06-03 Rambus Inc. Memory Systems and methods supporting volatile and wear-leveled nonvolatile physical memory
KR101497074B1 (ko) * 2008-06-17 2015-03-05 삼성전자주식회사 불휘발성 메모리 시스템 및 그것의 데이터 관리 방법
JP2010044504A (ja) * 2008-08-11 2010-02-25 Hitachi Cable Ltd フラッシュメモリを用いた装置及びそのフラッシュメモリへのデータの書き込み方法
JP5540969B2 (ja) * 2009-09-11 2014-07-02 ソニー株式会社 不揮発性メモリ装置、メモリコントローラ、およびメモリシステム
US20120166686A1 (en) * 2010-12-22 2012-06-28 Joerg Hartung Method, apparatus and system for aggregating interrupts of a data transfer
JP5643708B2 (ja) * 2011-03-30 2014-12-17 株式会社ケーヒン 電子制御装置
JP5677336B2 (ja) * 2011-08-01 2015-02-25 株式会社東芝 メモリ・デバイス
US20130227238A1 (en) * 2012-02-28 2013-08-29 Thomas VIJVERBERG Device and method for a time and space partitioned based operating system on a multi-core processor
WO2015040658A1 (ja) * 2013-09-20 2015-03-26 富士通株式会社 情報処理方法、情報処理装置、メモリコントローラ及びメモリ
CN104657192A (zh) * 2013-11-20 2015-05-27 上海华虹集成电路有限责任公司 在仿真器上模拟flash的方法
US10593412B2 (en) 2018-07-19 2020-03-17 Micron Technology, Inc. Using a status indicator in a memory sub-system to detect an event
CN120353386B (zh) * 2025-03-31 2025-11-18 广东旭龙物联科技股份有限公司 一种嵌入式数据存储方法、装置、终端设备及存储介质

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5581723A (en) * 1993-02-19 1996-12-03 Intel Corporation Method and apparatus for retaining flash block structure data during erase operations in a flash EEPROM memory array
US6795890B1 (en) * 1999-02-19 2004-09-21 Mitsubishi Denki Kabushiki Kaisha Data storage method, and data processing device using an erasure block buffer and write buffer for writing and erasing data in memory
JP2001051883A (ja) * 1999-08-12 2001-02-23 Nec Corp 不揮発性メモリにおける自己修復方法および不揮発性メモリ装置
JP4037605B2 (ja) * 2000-12-04 2008-01-23 株式会社東芝 不揮発性メモリユニットのコントローラ、同コントローラを有するメモリシステム及び不揮発性メモリユニットの制御方法
US6763424B2 (en) * 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
JP2002278850A (ja) * 2001-03-14 2002-09-27 Nec Corp 半導体装置
JP4654531B2 (ja) * 2001-04-20 2011-03-23 パナソニック電工株式会社 ブロック消去型記憶媒体の管理装置
US6675281B1 (en) * 2002-01-22 2004-01-06 Icreate Technologies Corporation Distributed mapping scheme for mass storage system
KR100526178B1 (ko) * 2003-03-31 2005-11-03 삼성전자주식회사 플래시 메모리 액세스 장치 및 방법

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Publication number Publication date
US8060684B2 (en) 2011-11-15
US20060059297A1 (en) 2006-03-16
JP2006085342A (ja) 2006-03-30

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