JP4573953B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4573953B2
JP4573953B2 JP2000192476A JP2000192476A JP4573953B2 JP 4573953 B2 JP4573953 B2 JP 4573953B2 JP 2000192476 A JP2000192476 A JP 2000192476A JP 2000192476 A JP2000192476 A JP 2000192476A JP 4573953 B2 JP4573953 B2 JP 4573953B2
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film
region
insulating film
island
metal element
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Japanese (ja)
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JP2002016256A5 (enExample
JP2002016256A (ja
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舜平 山崎
浩二 大力
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000192476A 2000-06-27 2000-06-27 半導体装置の作製方法 Expired - Fee Related JP4573953B2 (ja)

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JP2000192476A JP4573953B2 (ja) 2000-06-27 2000-06-27 半導体装置の作製方法

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Application Number Priority Date Filing Date Title
JP2000192476A JP4573953B2 (ja) 2000-06-27 2000-06-27 半導体装置の作製方法

Publications (3)

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JP2002016256A JP2002016256A (ja) 2002-01-18
JP2002016256A5 JP2002016256A5 (enExample) 2007-08-23
JP4573953B2 true JP4573953B2 (ja) 2010-11-04

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JP2000192476A Expired - Fee Related JP4573953B2 (ja) 2000-06-27 2000-06-27 半導体装置の作製方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4115158B2 (ja) 2002-04-24 2008-07-09 シャープ株式会社 半導体装置およびその製造方法
JP2003330388A (ja) * 2002-05-15 2003-11-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
CN116216630B (zh) * 2023-04-28 2023-07-21 润芯感知科技(南昌)有限公司 一种半导体器件及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03248471A (ja) * 1990-02-26 1991-11-06 Sanyo Electric Co Ltd 電界効果型トランジスタ
JP3974229B2 (ja) * 1997-07-22 2007-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6093624A (en) * 1997-12-23 2000-07-25 Philips Electronics North America Corporation Method of providing a gettering scheme in the manufacture of silicon-on-insulator (SOI) integrated circuits

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JP2002016256A (ja) 2002-01-18

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