JP4558433B2 - Crystal oscillator - Google Patents
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本発明は水晶振動子を技術分野とし、特に容量比γを大きくして負荷変動による周波数変化を防止した水晶振動子に関する。 The present invention relates to a crystal resonator in the technical field, and more particularly to a crystal resonator in which a capacitance ratio γ is increased to prevent a frequency change due to load fluctuation.
(発明の背景)水晶振動子は電子機器に周波数及び時間の基準源として内蔵される。例えばワイヤレスLANの中継基地局に採用される無線機器(発振器)では、容量比γを大きくして周波数変動を抑制した水晶振動子が求められている。 BACKGROUND OF THE INVENTION A crystal resonator is built in an electronic device as a frequency and time reference source. For example, in a wireless device (oscillator) employed in a wireless LAN relay base station, there is a demand for a crystal resonator that suppresses frequency fluctuations by increasing the capacity ratio γ.
(従来技術の一例)第4図は一従来例を説明する水晶振動子(水晶片)の図である。 (Example of Prior Art) FIG. 4 is a diagram of a crystal resonator (crystal piece) for explaining one conventional example.
水晶振動子はATカットとした矩形状の水晶片1からなる。水晶片1の両主面には対向する一対の励振電極2(ab)が形成され、例えば一端部両側に引出電極3(ab)を延出する。そして、引出電極3(ab)の延出した一端部両側を保持して図示しない容器内に密閉封入される。
The crystal resonator is composed of a
このようなものでは、第5図(a)に示したような共振特性(リアクタンス周波数特性)を有する。すなわち、周波数の上昇とともに直列共振点fs及び反共振点(並列共振点)faを得る共振特性を有する。この場合、直列共振点fsと反共振点faとの間を誘導性(ωL)とし、それ以外を容量性(1/ωC)とする。 Such a thing has a resonance characteristic (reactance frequency characteristic) as shown in FIG. That is, it has resonance characteristics that obtain the series resonance point fs and the antiresonance point (parallel resonance point) fa as the frequency increases. In this case, between the series resonance point fs and the antiresonance point fa is inductive (ωL), and the others are capacitive (1 / ωC).
これらは、一般に、第5図(b)で示す等価回路で示され、直列腕と並列腕とからなる。直列腕は等価直列抵抗R1、同直列容量C1及び同直列インダクタL1からなり、水晶片1の圧電作用による固有の共振現象に起因する。並列腕は等価並列容量C0からなり、特に励振電極2(ab)の対向面積による電極間容量に依存する。そして、直列腕による共振周波数が直列共振点fsに、直列腕と並列腕による共振周波数が反共振点faになる。
These are generally shown by an equivalent circuit shown in FIG. 5 (b), and are composed of a serial arm and a parallel arm. The series arm includes an equivalent series resistance R1, a series capacitance C1, and a series inductor L1, and is caused by an inherent resonance phenomenon due to the piezoelectric action of the
そして、発振回路を構成する場合には、一般に、リアクタンス周波数特性の誘導性領域(fs−faの間)を使用し、即ち水晶振動子をインダクタとして使用する。そして、水晶振動子に接続した図示しない発振回路の容量成分(負荷容量CL)との共振周波数を発振周波数とする。 When configuring an oscillation circuit, generally, an inductive region (between fs-fa) of reactance frequency characteristics is used, that is, a crystal resonator is used as an inductor. Then, a resonance frequency with a capacitance component (load capacitance CL) of an oscillation circuit (not shown) connected to the crystal resonator is set as an oscillation frequency.
発振周波数f0は、一般には下式(1)に示したように、直列共振点fsからの周波数偏差Δf/fsで表される。但し、Δf=f0−fs、γ=C0/C1であり、γは容量比と呼ばれる。
Δf/fs=1/2γ(1+CL/C0)・・・(1)
The oscillation frequency f0 is generally represented by a frequency deviation Δf / fs from the series resonance point fs as shown in the following equation (1). However, Δf = f0−fs and γ = C0 / C1, and γ is called a capacity ratio.
Δf / fs = 1 / 2γ (1 + CL / C0) (1)
この式から明かなように、周波数偏差Δf/fsは容量比γに反比例する。すなわち、周波数偏差Δfは容量比γが大きいほど小さく、容量比γが小さいほど大きい。そして、周波数偏差Δfが大きいほど、周波数可変幅も大きいことから、通常では、水晶振動子の容量比γを小さく設計する。 As is apparent from this equation, the frequency deviation Δf / fs is inversely proportional to the capacity ratio γ. That is, the frequency deviation Δf is smaller as the capacity ratio γ is larger, and is larger as the capacity ratio γ is smaller. Since the frequency variable width increases as the frequency deviation Δf increases, the capacitance ratio γ of the crystal resonator is normally designed to be small.
容量比γは等価直列容量C1に反比例し、同並列容量C0に比例する。等価直列容量C1(fF)及び同並列容量C0(pF)は励振電極2(ab)の対向面積に依存して大きくなる。但し、等価直列容量C1の方が変化量は大きく、対向面積に対して飽和する。このことから、通常では等価直列容量C1の飽和点近傍に対向面積を設定する。そして、容量比γを小さくする。 The capacity ratio γ is inversely proportional to the equivalent series capacity C1, and is proportional to the parallel capacity C0. The equivalent series capacitance C1 (fF) and the parallel capacitance C0 (pF) increase depending on the facing area of the excitation electrode 2 (ab). However, the equivalent series capacitance C1 has a larger change amount and is saturated with respect to the facing area. Therefore, the facing area is usually set near the saturation point of the equivalent series capacitance C1. Then, the capacity ratio γ is reduced.
(従来技術の問題点)しかしながら、上記構成の水晶振動子では、等価直列容量C1を大きくして容量比γを小さくすることによって次の問題があった。すなわち、発振周波数f0は等価直列容量C1が大きいほどリアクタンス(1/ωC1)が小さいため、直列接続となる負荷容量CL(発振回路)の影響を受けやすい。したがって、負荷容量CLに依存して発振周波数f0が変化する所謂負荷変動の問題があった。 (Problems of the prior art) However, the quartz resonator having the above-described configuration has the following problems by increasing the equivalent series capacitance C1 and reducing the capacitance ratio γ. That is, since the reactance (1 / ωC1) is smaller as the equivalent series capacitance C1 is larger, the oscillation frequency f0 is easily affected by the load capacitance CL (oscillation circuit) connected in series. Therefore, there is a problem of so-called load fluctuation in which the oscillation frequency f0 changes depending on the load capacitance CL.
特に、ワイヤレスLAN等の中継機に用いられる発振器では、セット基板への組立後にトリミングコンデンサ等の可変周波数調整素子を有しない、即ち負荷容量(発振周波数)の調整素子を有しない無調整型とする。したがって、発振回路を構成する各回路素子値のばらつきによって負荷容量CLが不均一になり、負荷変動を生じやすい。 In particular, an oscillator used in a repeater for a wireless LAN or the like is a non-adjustable type that does not have a variable frequency adjusting element such as a trimming capacitor after assembling to a set substrate, that is, does not have a load capacitance (oscillation frequency) adjusting element. . Accordingly, the load capacitance CL becomes non-uniform due to variations in circuit element values constituting the oscillation circuit, and load fluctuations are likely to occur.
また、負荷容量CLの調整素子を有していたとしても、発振回路の搭載されるセット基板の浮遊容量等に起因した負荷容量CLの変化によって、負荷変動を生ずる。なお、浮遊容量CLは例えば湿気等の環境条件によって変化する。これらのことから、一般とは逆に容量比γが大きく、発振周波数f0の負荷変動を抑圧する水晶振動子が求められた。 Even if a load capacitance CL adjustment element is provided, a load change occurs due to a change in the load capacitance CL caused by the stray capacitance of the set substrate on which the oscillation circuit is mounted. Note that the stray capacitance CL varies depending on environmental conditions such as humidity. From these facts, there has been a demand for a crystal resonator that has a large capacitance ratio γ and suppresses load fluctuations at the oscillation frequency f0.
このことから、オーバトーン振動を利用することが考えられた。オーバトーン振動は基本波振動の奇数次倍調波で、例えば40MHz(厚みが約41μm)の振動周波数を次数nを3とした3次オーバトーン振動を得る場合は、基本波での振動周波数は約13.3MHzになる。 From this, it was considered to use overtone vibration. The overtone vibration is an odd-order harmonic of the fundamental wave vibration. For example, when obtaining a third-order overtone vibration with a vibration frequency of 40 MHz (thickness of about 41 μm) and an order n of 3, the vibration frequency of the fundamental wave is It becomes about 13.3MHz.
そして、オーバトーン次数をnとすると、容量比γ′は基本波での容量比γに対してn2γなる。ちなみに、ATカットの場合は、基本波でのγは約250であり、3次オーバトーン振動にすると2000以上になる。このことから、容量比γ′を大きくできる。 When the overtone order is n, the capacity ratio γ ′ is n2γ with respect to the capacity ratio γ in the fundamental wave. By the way, in the case of AT cut, γ at the fundamental wave is about 250, which is 2000 or more when the third-order overtone vibration is used. From this, the capacity ratio γ ′ can be increased.
しかし、この場合には、基本波での振動周波数が13.3MHzとなって水晶片1の厚みが大きく(約125μm)なる。また、厚みが大きくなる分、平面外形も大きくなって、ベベル加工等の端面処理を必要とする。一般には、振動周波数が概ね30MHz以下になると端面処理が必要になる。また、水晶片1の厚みが大きい分、人工水晶からの取り分が少なくなって、生産性に欠ける問題があった。
However, in this case, the vibration frequency of the fundamental wave is 13.3 MHz, and the thickness of the
(発明の目的)本発明は基本波振動での容量比γを大きくし、生産性を維持した水晶振動子を提供することを目的とする。 (Object of the Invention) An object of the present invention is to provide a crystal resonator in which the capacity ratio γ in the fundamental wave vibration is increased and productivity is maintained.
本発明は特許請求の範囲(請求項1)に示したように、振動領域とした厚みの大きい中央部と前記中央部よりも厚みの小さい外周部とを有し、前記振動領域の両主面に対向する励振電極を設けて前記外周部に引出電極を延出するとともにエッチングによって外形加工されたATカットの水晶片からなる水晶振動子において、前記引出電極は前記外周部の両主面間で前記励振電極の全外周にて重畳する対向部を有し、前記励振電極は前記振動領域の輪郭から離間した中央域に形成され、前記励振電極と前記対向部とは前記両主面間では対向しない幅狭の引出電極によって電気的に接続した構成とする。 The present invention has a central portion having a large thickness as an oscillating region and an outer peripheral portion having a smaller thickness than the central portion, and both main surfaces of the oscillating region, as indicated in the claims (Claim 1). In the crystal resonator comprising an AT-cut crystal piece that is provided with an excitation electrode facing the outer periphery and extends the extraction electrode to the outer peripheral portion and is contoured by etching , the extraction electrode is disposed between both main surfaces of the outer peripheral portion. The excitation electrode has an opposing portion that overlaps on the entire outer periphery of the excitation electrode, and the excitation electrode is formed in a central area separated from the outline of the vibration region, and the excitation electrode and the opposing portion are opposed to each other between the two main surfaces. It is set as the structure electrically connected by the narrow extraction electrode which does not .
このような構成であれば、引出電極の対向部によって電極間容量C0を増加できる。これに対し、励振電極の対向面積は一定なので、等価直列容量C1に変化はなく一定に維持される。したがって、オーバトーン振動を利用することなく、基本波振動での容量比γを大きくできる。そして、厚みが小さい分、ベベル等の端面処理を必要とせず、人工水晶からの取り分を多くするので、生産性を向上できる。 With such a configuration, the interelectrode capacitance C0 can be increased by the opposing portion of the extraction electrode. On the other hand, since the opposing area of the excitation electrode is constant, the equivalent series capacitance C1 is not changed and is maintained constant. Therefore, the capacity ratio γ in the fundamental wave vibration can be increased without using overtone vibration. Further, since the thickness is small, end face processing such as a bevel is not required, and the amount taken from the artificial quartz is increased, so that productivity can be improved.
本発明の請求項2に示したように、請求項1の前記励振電極は前記中央部の全面に設けて、前記対向部は前記励振電極の全外周とする。同請求項3では、請求項1の前記水晶片は一枚の水晶ウェハからエッチングによって外形加工される。 According to a second aspect of the present invention, the excitation electrode according to the first aspect is provided on the entire surface of the central portion, and the opposing portion is the entire outer periphery of the excitation electrode. In the third aspect of the invention, the crystal piece according to the first aspect is processed by etching from a single crystal wafer.
第1図は本発明の一実施例を説明する水晶振動子の図で、同図(a)は平面図、同図(b)はA−A断面図である。なお、前従来例と同一部分には同番号を付与してその説明は簡略又は省略する。 FIGS. 1A and 1B are diagrams of a crystal resonator for explaining an embodiment of the present invention. FIG. 1A is a plan view and FIG. In addition, the same number is attached | subjected to the same part as a prior art example, and the description is simplified or abbreviate | omitted.
水晶振動子は前述したようにATカットとした矩形状の水晶片1からなる。ここでは、水晶片1は写真製版技術を用いたエッチングによって外形加工され、厚みの大きい中央部とその外周を包囲する厚みの大きい外周部とからなる。厚みの大きい中央部は振動領域として、両主面に励振電極2(ab)が形成される。
As described above, the crystal resonator is composed of the
引出電極3(ab)は厚みの小さい外周部に設けられ、両主面にて各励振電極2(ab)の全外周に接続して両主面間で対向する環状対向部4を有する。そして、環状対向部4から水晶片1の一端部両側に延出する。励振電極2(ab)及び引出電極3(ab)は水晶片1の外形加工時に写真製版技術を用いたエッチングによって形成される。そして、引出電極3(ab)の延出した一端部両側は前述同様に保持され、水晶片1が容器内に密閉封入される。
The extraction electrode 3 (ab) is provided on the outer peripheral portion having a small thickness, and has an annular facing
このような構成であれば、等価並列容量C0を決定する両主面間の電極間容量C01は、励振電極2(ab)及び引出電極3(ab)の環状対向部4に依存する。すなわち、励振電極2(ab)による電極間容量C0aと環状対向部4による電極間容量C0bとの和になる。
With such a configuration, the interelectrode capacitance C01 between the two main surfaces that determines the equivalent parallel capacitance C0 depends on the
ちなみに、振動周波数を40MHz即ち振動領域の厚みd1を41μm、環状対向部4(外周部)の厚みd2を10μmとし、励振電極2(ab)の面積S1を0.72mm2(一辺が0.85mm、正方形)、環状対向部4の面積S2を0.41mm2とし、誘電率εを4.5とすると、電極間容量C01は次になる。
C01=C0a+C0b=εS1/d1+εS2/d2=1+2.3=3.3pF
Incidentally, the vibration frequency is 40 MHz, that is, the thickness d1 of the vibration region is 41 μm, the thickness d2 of the annular facing portion 4 (outer peripheral portion) is 10 μm, and the area S1 of the excitation electrode 2 (ab) is 0.72 mm 2 (one side is 0.85 mm, square ) If the area S2 of the annular facing
C01 = C0a + C0b = εS1 / d1 + εS2 / d2 = 1 + 2.3 = 3.3pF
したがって、この場合には、電極間容量C01(3.3pF)は励振電極2(ab)のみの場合(C0a=1pF)に比較して3.3倍になる。一方、等価直列容量C1は励振電極2(ab)の大きさに依存して3.5fFとなる。このことから、容量比γ=C0/C1は約1000になる。なお、等価並列容量C0には電極間容量C01に浮遊容量が加算される。 Therefore, in this case, the interelectrode capacitance C01 (3.3 pF) is 3.3 times that in the case of only the excitation electrode 2 (ab) (C0a = 1 pF). On the other hand, the equivalent series capacitance C1 is 3.5 fF depending on the size of the excitation electrode 2 (ab). From this, the capacity ratio γ = C0 / C1 is about 1000. Note that stray capacitance is added to the interelectrode capacitance C01 to the equivalent parallel capacitance C0.
これにより、容量比γを例えば1000以上に大きくできるので、周波数可変幅を小さくして発振周波数の負荷変動を防止できる。そして、振動周波数を40MHzとした基本波振動なので、オーバトーン振動を利用する場合に比較して、厚みも小さくて平面外形を大きくすることがない。したがって、ベベル等の端面処理を要せず、厚みが小さい分、人工水晶からの取り分を多くして生産性を高める。 As a result, the capacity ratio γ can be increased to, for example, 1000 or more, so that the frequency variable width can be reduced to prevent load fluctuation of the oscillation frequency. And since it is a fundamental wave vibration with a vibration frequency of 40 MHz, compared with the case where overtone vibration is used, the thickness is small and the planar outer shape is not enlarged. Therefore, end face processing such as a bevel is not required, and the productivity is increased by increasing the portion of the artificial quartz because the thickness is small.
なお、引出電極3(ab)の環状対向部4によってエネルギーが閉じ込められ、副振動が発生するが、振動領域による振動周波数よりも高域に発生するので、格別の問題は生じない。また、振動周波数が高いほど、厚みが小さくなって励振電極2(ab)の面積を小さくできて環状対向部4の面積を大きくできる。
The energy is confined by the
(他の事項)上記実施例では、励振電極2(ab)は厚みの大きい振動領域の全面に設けたが、例えば第2図に示したようにしてもよい。すなわち、振動領域の輪郭から離間した中央に励振電極2(ab)形成して、環状対向部4を厚みの小さい外周部に設けてもよい。
(Other matters) In the above embodiment, the excitation electrode 2 (ab) is provided on the entire surface of the vibration region having a large thickness. However, for example, it may be as shown in FIG. That is, the excitation electrode 2 (ab) may be formed in the center separated from the contour of the vibration region, and the
また、引出電極3(ab)の対向部は励振電極2(ab)を取り巻く環状としたが、これに限らず両主面間で対向部4があればく例えば第3図に示したようにしてもよい。すなわち、引出電極3(ab)の対向部4は、水晶片1の長さ方向の励振電極2(ab)の両側となる外周部に設けてもよい。また、環状対向部に設けた引出電極3(ab)をトリミングすることによって容量比を制御できる。
Further, the opposing portion of the extraction electrode 3 (ab) has an annular shape surrounding the excitation electrode 2 (ab). However, the present invention is not limited to this, and there is an opposing
1 水晶片、2 励振電極、3 引出電極、4 対向部。 1 crystal piece, 2 excitation electrode, 3 extraction electrode, 4 facing part.
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JPH02231808A (en) * | 1989-03-03 | 1990-09-13 | Toyo Commun Equip Co Ltd | Electrode structure of crystal resonator |
JPH04127709A (en) * | 1990-09-19 | 1992-04-28 | Seiko Epson Corp | At cut crystal oscillator |
JPH11355094A (en) * | 1998-06-09 | 1999-12-24 | Matsushita Electric Ind Co Ltd | Piezoelectric vibrator |
JP2005094410A (en) * | 2003-09-18 | 2005-04-07 | Toyo Commun Equip Co Ltd | Structure of piezoelectric vibrator and manufacturing method thereof |
-
2004
- 2004-10-01 JP JP2004290818A patent/JP4558433B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS568315U (en) * | 1979-06-28 | 1981-01-24 | ||
JPS57151023U (en) * | 1981-03-16 | 1982-09-22 | ||
JPS5847316A (en) * | 1981-09-16 | 1983-03-19 | Seikosha Co Ltd | Thickness slip piezoelectric oscillator and its production |
JPH02231808A (en) * | 1989-03-03 | 1990-09-13 | Toyo Commun Equip Co Ltd | Electrode structure of crystal resonator |
JPH04127709A (en) * | 1990-09-19 | 1992-04-28 | Seiko Epson Corp | At cut crystal oscillator |
JPH11355094A (en) * | 1998-06-09 | 1999-12-24 | Matsushita Electric Ind Co Ltd | Piezoelectric vibrator |
JP2005094410A (en) * | 2003-09-18 | 2005-04-07 | Toyo Commun Equip Co Ltd | Structure of piezoelectric vibrator and manufacturing method thereof |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9837982B2 (en) | 2011-03-09 | 2017-12-05 | Seiko Epson Corporation | Vibrating element, vibrator, oscillator, and electronic device with stepped excitation section |
US8614607B2 (en) | 2011-03-18 | 2013-12-24 | Seiko Epson | Piezoelectric vibration element, piezoelectric vibrator, piezoelectric oscillator, and electronic device |
US9093634B2 (en) | 2011-03-18 | 2015-07-28 | Seiko Epson Corporation | Piezoelectric vibration element, piezoelectric vibrator, piezoelectric oscillator, and electronic device |
US9948275B2 (en) | 2011-03-18 | 2018-04-17 | Seiko Epson Corporation | Piezoelectric vibration element, piezoelectric vibrator, piezoelectric oscillator, and electronic device |
US9431995B2 (en) | 2014-07-31 | 2016-08-30 | Seiko Epson Corporation | Resonator element, resonator, resonator device, oscillator, electronic device, and mobile object |
US9716484B2 (en) | 2014-07-31 | 2017-07-25 | Seiko Epson Corporation | Resonator element, resonator, resonator device, oscillator, electronic device, and mobile object |
Also Published As
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JP2006108949A (en) | 2006-04-20 |
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