JP4497569B2 - 投影光学系のコマ収差の評価方法 - Google Patents

投影光学系のコマ収差の評価方法 Download PDF

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Publication number
JP4497569B2
JP4497569B2 JP37573398A JP37573398A JP4497569B2 JP 4497569 B2 JP4497569 B2 JP 4497569B2 JP 37573398 A JP37573398 A JP 37573398A JP 37573398 A JP37573398 A JP 37573398A JP 4497569 B2 JP4497569 B2 JP 4497569B2
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Prior art keywords
optical system
projection optical
reticle
coma aberration
image
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Expired - Fee Related
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JP37573398A
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Japanese (ja)
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JP2000181050A (ja
JP2000181050A5 (enExample
Inventor
隆史 佐藤
秀樹 稲
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Canon Inc
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Canon Inc
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Priority to JP37573398A priority Critical patent/JP4497569B2/ja
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Publication of JP2000181050A5 publication Critical patent/JP2000181050A5/ja
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP37573398A 1998-12-17 1998-12-17 投影光学系のコマ収差の評価方法 Expired - Fee Related JP4497569B2 (ja)

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JP37573398A JP4497569B2 (ja) 1998-12-17 1998-12-17 投影光学系のコマ収差の評価方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP37573398A JP4497569B2 (ja) 1998-12-17 1998-12-17 投影光学系のコマ収差の評価方法

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JP2000181050A JP2000181050A (ja) 2000-06-30
JP2000181050A5 JP2000181050A5 (enExample) 2006-01-12
JP4497569B2 true JP4497569B2 (ja) 2010-07-07

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JP37573398A Expired - Fee Related JP4497569B2 (ja) 1998-12-17 1998-12-17 投影光学系のコマ収差の評価方法

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JP (1) JP4497569B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000182951A (ja) * 1998-12-17 2000-06-30 Canon Inc 半導体露光方法及び装置とそれに用いる反射型マスク
JP2002156738A (ja) * 2000-11-17 2002-05-31 Nec Corp パターン形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3153230B2 (ja) * 1990-09-10 2001-04-03 株式会社日立製作所 パタン形成方法
JP3117095B2 (ja) * 1991-10-24 2000-12-11 株式会社ニコン 投影光学系の検査方法
JPH07261367A (ja) * 1994-03-17 1995-10-13 Fujitsu Ltd ホトマスクおよびその製造方法
JP3720462B2 (ja) * 1996-06-21 2005-11-30 キヤノン株式会社 半導体露光装置
JP3728840B2 (ja) * 1996-12-19 2005-12-21 株式会社ニコン 投影光学系の収差測定方法及び収差測定用のマスク
JPH10232185A (ja) * 1996-12-19 1998-09-02 Nikon Corp 投影光学系の収差測定方法
JP4143156B2 (ja) * 1997-12-22 2008-09-03 キヤノン株式会社 半導体露光方法及び装置とそれに用いるレチクル
JP2000182951A (ja) * 1998-12-17 2000-06-30 Canon Inc 半導体露光方法及び装置とそれに用いる反射型マスク

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