JP4483159B2 - Method and apparatus for controlling film thickness distribution in optical thin film manufacturing apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method and an apparatus for controlling the film thickness distribution of a thin film formed on a substrate by an optical thin film manufacturing apparatus, and more particularly, to control the film thickness of each layer in a dielectric multilayer film and to obtain a desired multilayer film. The present invention relates to a method and an apparatus for obtaining a uniform film thickness distribution.
[0002]
[Background]
FIG. 1 is a schematic configuration diagram of an optical thin film manufacturing apparatus disclosed in Japanese Patent Application Laid-Open No. 2001-73136, which is a prior application of the present application. In the figure, reference numeral (1) denotes a vacuum chamber provided with a vacuum exhaust port (2) and a gas introduction port (3), and a substrate (4) mounted in the vacuum chamber (1). A dome (5) and a shield (13) having a mesh structure, and an evaporation source (6) and a thermionic emission mechanism (8) are provided at opposing positions. A shutter (10) is movably provided between the substrate dome (5) and the evaporation source (6). The substrate dome (5) is connected to the substrate dome (5) from an external high frequency power source (14) via a matching box (15). Thus, high frequency power is supplied from the high frequency power supply mechanism (16). At this time, the substrate dome (5) rotates through an external substrate dome rotation mechanism (not shown). The desired optical thin film is obtained on the substrate (4) while observing and controlling the optical thin film deposited on the monitoring substrate (11) provided in the vicinity of the substrate dome (5) with an external optical film thickness meter (12). There is something to try.
[0003]
As an operation of this apparatus, the inside of the vacuum chamber (1) is evacuated in advance to a high vacuum region (about 5 × 10 ⁻⁴ Pa) through a vacuum exhaust port (2). Thereafter, about 8 × 10 ^{−3 to} 3 × 10 ⁻² Pa of a discharge gas is introduced from the gas introduction port (3) by pressure. When high frequency power is applied to the substrate dome (5) by the high frequency power supply mechanism (16) (50 to 3 kW), glow discharge is generated in the space between the substrate dome (5) and the evaporation source (6), and a plasma state is obtained. A self-induced negative DC electric field is generated on the surface of the substrate (4) attached to the substrate dome (5). The plasma-ized discharge gas is accelerated by a negative DC electric field self-induced on the substrate surface and enters the surface of the substrate (4). In this state, when electric power (600 watts to 3600 W) is supplied to the evaporation source (6) and the evaporation source shutter (10) is opened, the evaporated particles evaporated from the evaporation source (6) pass through the plasma and reach the substrate. Reach (4). The thin film deposited on the monitoring substrate (11) is observed and controlled by the optical film thickness meter (12), and when the desired film thickness is reached, the evaporation source shutter (10) is closed.
[0004]
The film quality of the optical thin film deposited by this apparatus is a good film quality with a high packing density. This is because there are many high-speed particles in the plasma discharge space, and these high-speed particles collide with the substrate dome (5) and the substrate (4) during thin film formation, giving kinetic energy, This is thought to be due to the effects of promoting compounding.
[0005]
In the above-described optical thin film manufacturing apparatus, while supplying high output high frequency power to the substrate dome rotating at a rotation speed of about 100 rpm, a discharge gas is introduced to generate plasma, and at the same time, the evaporation source material is changed. By evaporating, it was used as an apparatus for producing several layers of antireflection films by forming a film on a substrate, and the guaranteed value of the film thickness distribution was about ± 1%.
[0006]
On the other hand, in recent years, driven by the rapid demand for traffic such as the Internet and mobile phones, the capacity of optical fiber transmission lines connecting not only trunk lines but also cities is remarkable. In order to increase the communication capacity, there is a wavelength multiplexing system (WDM) in which optical signals of different wavelengths are placed on one optical fiber. Currently, high-speed and high-density wavelength multiplexing (DWDM) are being promoted simultaneously with wideband technology of optical amplifiers. The filter used here is a multilayer filter, but the types and wavelength bands are increasingly diversified due to reasons such as reducing insertion loss. There is a strong demand for an optical thin film manufacturing apparatus that requires advanced manufacturing technology such as such a band pass filter (BPF) for DWDM. However, in the conventional apparatus described above, a film for manufacturing a BPF for DWDM is required. It was difficult to fully satisfy the requirements such as thickness distribution and yield.
[0007]
In order to manufacture a BPF for DWDM, it is necessary to form a dielectric thin film having more than 100 layers on a substrate. The International Telecommunication Union (ITU) standardizes a set of closely spaced wavelengths with a 1550 nm window, which corresponds to about 0.8 nm at 100 GHz intervals. This channel set is generally referred to as ITU-T, and in order to obtain this wavelength interval, the half-value width of the BPF must be less than or equal to this value, so that it becomes a multilayer film exceeding 100 layers, and the film thickness of each layer is accurately set. In addition, a filter with low loss of light quantity cannot be obtained unless the film is formed without unevenness. Therefore, there is an increasing demand for film thickness control accuracy of each layer during film formation. For example, in order to manufacture an ITU-T 100 GHz BPF, the center wavelength accuracy must be 0.1 nm or less. In addition, in the conventional optical filter, if the film thickness control accuracy, which was about 0.5%, is not extremely high as 0.01% (2.2 nm in terms of film thickness), interference due to deviation of the center wavelength, film The loss of the light amount value due to the thickness unevenness occurs, and thus a filter having desired optical characteristics cannot be obtained. Thus, it can be said that the improvement of the film thickness distribution accuracy is a very important point.
[0008]
Accordingly, an object of the present invention is to provide a method and apparatus for forming a dielectric film having a film thickness distribution accuracy applicable to a BPF for DWDM.
[0009]
SUMMARY OF THE INVENTION
In the optical thin film manufacturing method and apparatus of the present invention, high frequency power is directly applied to the substrate dome, and the substrate dome is rotated at a high speed of about 1000 rpm, and the evaporated material is deposited on the substrate. Thus, a bandpass filter (BPF) for high density multiple wavelength communication (DWDM) is obtained by forming a dielectric thin film having a highly uniform film thickness distribution.
[0010]
In the embodiment of the present invention, in order to maintain the plasma generated by supplying high-frequency power to the substrate dome that rotates at a high speed in a stable state, a bearing in which the rotating unit and the magnetic seal unit are integrated with the rotating shaft is provided. Using the substrate dome to rotate at a high speed and to insulate from the vacuum chamber;
In order to maintain the high-speed rotation of the substrate dome and the high vacuum of the vacuum chamber, there are a rotating unit that uses a combined angular bearing for the rotating shaft and a magnetic seal unit that has a structure in which the rotating shaft forms part of the magnetic seal. Equipped with a high-speed rotation mechanism integrated by a flange structure;
In order to supply high-frequency power to the substrate dome that rotates at high speed and maintain a stable plasma state, it is necessary to suppress the occurrence of abnormal discharge. For this purpose, even intervals along the outer peripheral surface of the contact shaft that rotates at high speed are required. A high-frequency power supply mechanism in which a plurality of contacts are arranged;
The contact shaft, which is made of a copper alloy with a low hardness, is made of a copper alloy with a low hardness, and contacts that rotate at high speed using a coil spring from the back side of the contact shaft that has been hardened by subjecting an alloy mainly composed of iron components to surface nitriding. A high-frequency power supply mechanism configured to be in pressure contact with the outer peripheral surface of the shaft is provided.
[0011]
[Explanation of Examples]
In designing the embodiment of the present invention, a study (simulation) was conducted on how the rotational speed of the substrate dome would affect the film thickness distribution of the thin film deposited on the substrate.
Expression (1) represents an expression for obtaining the film thickness distribution of the substrate mounted on the substrate dome.
T / TO = cos ⁿ θ × cos α × (h / l) ² Equation (1)
T: film thickness TO at an arbitrary point p on the substrate TO: film thickness at a height h just above the evaporation source θ: radiation angle from the evaporation source α: vapor deposition angle n at the evaporation point on the substrate n: evaporation coefficient l : Distance from point evaporation source to point p
Based on equation (1), all combinations of substrate dome rotation angles at the start of film formation and at the end of film formation and the integrated film thickness based on the number of rotations are obtained, and these are used as equation (2) for maximum film thickness deviation.
Maximum film thickness deviation (%) = (maximum film thickness−minimum film thickness) ÷ (average film thickness on entire circumference × rotational speed) × 100 (2)
[0013]
FIG. 2 shows the relationship between the distribution of film forming positions on the substrate and the number of revolutions of the substrate dome using this equation (2). The simulation conditions at this time are the evaporation source eccentric distance (distance from the position where the perpendicular is dropped from the substrate dome to the evaporation source); 280 mm, dome height: 1000 mm, evaporation coefficient: 1.8, substrate position: dome center . The horizontal axis represents the rotation speed (rpm) of the substrate dome and the vertical axis represents the maximum film thickness deviation (%). The maximum film thickness deviation (%) at 50 mm, 100 mm, 150 mm, and 200 mm from the center of the substrate dome. It is a plot. From the figure, it can be seen that when the rotation speed of the substrate dome is around 1000 rpm, the maximum film thickness deviation is close to “0” even if the substrate is placed 200 mm from the center of the substrate dome. Thus, it has been found that the film thickness distribution accuracy can be improved by rotating the substrate dome with the substrate mounted thereon at a high speed.
[0014]
In the conventional optical thin film manufacturing apparatus, the rotation speed of the substrate dome is used at about 100 rpm as described above. However, if the rotation speed of the substrate dome is increased with this conventional structure, the rotation speed is about 300 rpm. As a result, the vibration and noise increased, and it was found that it could not be used at a regular rotational speed of 1000 rpm (MAX: 1500 rpm).
[0015]
Therefore, in the present invention, as shown in FIG. 3, as a new high-speed rotation mechanism, the rotation unit and the magnetic seal unit are integrated by using a flange structure, and a structure combined with a rotation shaft is adopted, thereby rotating the substrate dome at a rotation speed of 1000 rpm. In addition to being able to be used stably at high speeds, it was possible to maintain a high vacuum in the vacuum chamber at the same time with a magnetic seal.
[0016]
In order to stably supply high-frequency power to the substrate dome while performing high-speed rotation, there is no electrical connection between the contact shaft that supplies high-frequency power to the substrate dome and the rotation shaft that transmits the power of the motor via the belt. Must be insulated. Therefore, an insulator is interposed between the contact shaft and the rotating shaft. However, a high potential difference is generated between the insulator and the rotating shaft due to the high frequency power supplied to the contact shaft. Due to this potential difference, the insulator is charged with a high capacity and also has a high temperature, so that it easily breaks due to its thermal expansion. In addition, cracks are likely to occur due to the force applied by high-speed rotation. This crack has a very bad influence on film formation with a uniform film thickness distribution. In the present invention, the material and structure of the insulator have been improved in light of these problems.
[0017]
In addition, in order to directly supply high output high frequency power to the substrate dome that rotates at a high speed of about 1000 rpm, structural improvements were required from the viewpoints of maintainability, countermeasures against abnormal discharge, and contact life. .
[0018]
Specifically, regarding the maintenance performance, the conventional contact maintenance method is as follows. When the contact (34) is consumed as shown in FIG. 4, the substrate dome (5) is once removed from the vacuum chamber and contacted. It was necessary to replace the board dome and reattach the board dome, but the new contact mechanism can easily replace the contact without removing the board dome as shown in [Fig.5], [Fig.6a] and [Fig.6b]. The structure.
[0019]
Next, from the standpoint of countermeasures against abnormal discharge, a mechanism that reduces the occurrence of abnormal discharge as compared with the conventional contact mechanism even when rotating at a high speed of about 1000 rpm. As shown in FIG. 4, the conventional contact mechanism has a copper alloy contact (34) attached to a metal plate mainly composed of an iron component at the top of a substrate dome, and a spring within a certain range from the back surface. The contact and the substrate dome are brought into contact with each other and fed with high-frequency power in a structure in which the plate spring (50) having a constant value is pressed down while being pressed.
[0020]
On the other hand, as shown in FIG. 5, FIG. 6a and FIG. 6b, the new contact mechanism has a constant contact with a plurality of contacts at equal intervals on the outer peripheral surface of the rotating shaft, and is unlikely to cause abnormal discharge from the back surface. The structure is such that it is pressed by a spring having a spring constant. Specifically, the contact is pressed against the outer peripheral surface of the rotating shaft by a coil spring having a spring constant of 0.07 kg × s2 from the back surface of the contact. This is the selection of the minimum spring constant that eliminates the momentary gap between the contact and the contact shaft caused by the shaft swing of the rotating shaft and can reduce the occurrence of abnormal discharge as much as possible.
[0021]
Here, for example, when the substrate dome is rotated at a high speed of about 1000 rpm, it is assumed that a gap of 10 μm is instantaneously formed between the contact and the contact shaft, and until the conventional contact and the new contact come into contact with the contact shaft again. If you think about time,
T: Time until the contact comes into contact k: Spring constant (kg × s2)
m: contact weight applied to the spring x: distance the spring contracts when the contact contacts (m)
h: Distance between contact and contact axis (m)
Then, the time T until the contact comes into contact with the contact shaft again is
T = {(2 × h × m) ÷ (k × x)} Equation (3)
It is represented by Here, the values of the contact mechanisms of the conventional structure, k: 0.02 (kg × s2), m = 0.05 (kg), x = 0.01 (m), h = 10 × 10 ⁻⁶ (m ) Is substituted into equation (3), the time required for the contact of the conventional structure to contact the contact shaft again is T1 = 0.0707 (sec).
[0022]
Next, the respective values of the new contact mechanism of the present invention, k: 0.07 (kg × s2), m: 0.0005 (kg), x: 0.03 (m), h: 10 × 10 ⁻⁶ ( When m) is substituted into Equation (3), the time until the contact with the new structure comes into contact with the contact shaft again becomes T2 = 0.699 (sec), and T2 is about 1/10 compared with T1. short. That is, it can be seen that the novel contact mechanism of the present invention has a 10 times lower probability of occurrence of abnormal discharge than the conventional contact mechanism. If it is larger than this spring constant, T2 is further shortened and the probability of occurrence of abnormal discharge is reduced. However, in terms of the wearability (life) of the contact, it is consumed earlier and becomes inefficient.
[0023]
Furthermore, the material of the contact and the contact shaft considers the wear characteristics from the contact life. The contacts are exchanged as consumables on the premise that they have good electrical conductivity, and are made of a low hardness (soft) copper alloy material. It is possible to supply power. On the other hand, as for the contact shaft, a material having an iron component having a high hardness as a main component and subjected to nitriding as a surface treatment was used. The combination of the contact and the material of the contact shaft determines the life of the contact, which is an important factor that greatly affects the productivity.
[0024]
[Description of configuration of embodiment]
Embodiments of the present invention will be described below with reference to the drawings.
FIG. 7 is a schematic configuration diagram of an optical thin film manufacturing apparatus according to the present invention. In the figure, reference numeral (1) denotes a vacuum chamber provided with a vacuum exhaust port (2) and a gas introduction port (3), and a substrate (4) mounted in the vacuum chamber (1). A plurality of evaporation sources (6) are provided at positions facing the dome (5) and the shield (13) having a mesh structure.
[0025]
A plurality of movable shutters (10) are provided between the substrate dome (5) and the evaporation source (6). A matching box (15) is connected to the substrate dome (5) from an external high frequency power source (not shown). The high frequency power is supplied from the high frequency power supply mechanism (16) via At this time, the substrate dome (5) is rotationally driven by the motor (20) by the belt (21) through the pulley (22) with the rotating shaft (23). A desired optical thin film is obtained while observing and controlling the optical film thickness deposited on the substrate (4) provided at the center of the substrate dome (5) with an external optical film thickness meter (12) and a control device (17). It is a thing to try.
[0026]
FIG. 3 is a schematic cross-sectional configuration diagram of the rotational drive portion of the substrate dome (5) of FIG. In the figure, the substrate dome (5) is rotationally driven by the motor (20) by the belt (21) via the pulley (22) through the rotating shaft (23) as described above. The rotating shaft (23) includes a rotating unit (24) using a combined angular bearing (26) for realizing a long life at high speed rotation, and the rotating shaft (23) of the magnetic seal (27). The magnetic seal unit (25) having a part of the structure is integrated by a plurality of fixing screws (28) together by a flange structure, and fixed to the upper part of the vacuum chamber (1). With this configuration, the substrate dome (5) can be rotated at a high speed of 1000 rpm without vibration and noise, and the vacuum seal (27) using magnetic fluid can be used to maintain a stable high-speed rotation and high vacuum. Became possible.
[0027]
Similarly, FIG. 5 shows a schematic configuration diagram for supplying high-frequency power to the substrate dome (5). In the figure, the rotating shaft (23) is provided with a plurality of insulators (30) and (31) made of alumina ceramic having a low dielectric constant, a low thermal expansion coefficient, and good thermal shock resistance. The contact shaft (32) is fixed by a plurality of screws (33). By adopting this insulating structure, the contact shaft (32) is capable of completely supplying high-frequency power supplied from the power supply plate (39) via the contact (34) while rotating at high speed together with the rotating shaft (23). It became possible to insulate.
[0028]
On the other hand, a plurality of contacts (34) spaced at equal intervals around the contact shaft (32) are arranged on the contact bases (35a) and (35b) as shown in FIG. 6a. In this case, the contact bases (35a) and (35b) to which three contacts (34) are attached are sandwiched from the left and right around the contact shaft (32), and a plurality of bolts (38) are used to provide a plurality of insulations. It fixes to the electric power feeding base (37) fixed to the vacuum chamber (1) through the insulator (36). The contact bases (35a) and (35b) are supplied with high-frequency power from the matching box (15) via the feed plate (39).
[0029]
FIG. 6b shows a state in which the contact shaft (32) is always pressed by a spring (40) having a constant spring constant such that abnormal discharge hardly occurs from the back surface of the plurality of contacts (34). .
[0030]
By adopting such a power feeding mechanism, high-frequency power is stably supplied to the substrate dome (5) that rotates at high speed without causing abnormal discharge, and when the contact (34) is consumed, a conventional substrate is used. The dome (5) must be removed from the vacuum chamber (1) and then replaced, but the contact base is removed by removing a plurality of bolts (38) from between the substrate dome (5) and the power supply base (37). Each of (35a) and (35b) can be taken out to the left and right, leading to improvement in maintainability of the contact (34).
[0031]
[Description of operation and operation of embodiment]
The operation of the apparatus of the present invention will be described with reference to FIG. The inside of the vacuum chamber (1) is evacuated in advance through a vacuum exhaust port (2) to a high vacuum region (about 5 × 10 ⁻⁴ Pa). The substrate dome is driven by the rotating unit (24) using the angular bearing (26) by driving the motor (20) and rotating the rotating shaft (23) via the belt (21) and the pulley (22). (5) performs smooth high-speed rotation without generating vibration and noise. At this time, the inside of the vacuum chamber is maintained at a high vacuum by a magnetic seal unit (25) using a vacuum seal (27) with a magnetic fluid. Thereafter, a discharge gas (O2 or the like) is introduced at a pressure of about 0.01 to 0.02 Pa from the gas introduction port (3).
[0032]
Next, when high frequency power of 1 to 3 kW is applied to the substrate dome (5) by the high frequency power supply mechanism (16) shown in FIG. 5, FIG. 6a and FIG. 6b, the substrate dome (5) and the evaporation source A glow discharge is generated in the space (6) and a plasma state is obtained. A self-induced negative DC electric field is generated on the surface of the substrate (4) attached to the substrate dome (5). The plasma-ized discharge gas is accelerated by a negative DC electric field self-induced on the substrate surface and enters the surface of the substrate (4).
[0033]
In this state, when electric power (600 to 3600 W) is supplied to the evaporation source (6) and the evaporation source shutter (10) is opened, the evaporated particles evaporated from the evaporation source (6) pass through the plasma and pass through the substrate (4 ). By observing the thin film deposited on the substrate (4) with the optical film thickness meter (12), the controller (17) controls the switching of the evaporation source (6), the opening and closing of the evaporation source shutter (10), and the like. An optical multilayer thin film having a desired film thickness can be obtained with a uniform film thickness distribution.
[0034]
FIG. 8 shows optical characteristics obtained as a result of forming a 63-layer BPF using this apparatus. The film formation conditions at this time were alternately formed on a quartz substrate having a diameter of 100 mm and a thickness of 10 mm, using Ta ₂ O _{5 as} a high refractive material, SiO ₂ as a low refractive material, and a Ta ₂ O ₅ film as a first layer. Membrane was performed. In this case, the film thickness control method of the vapor deposition material was controlled by observation using an optical film thickness controller with a transmittance extreme value control of a quarter wavelength mainly at a photometric wavelength of 1550 nm. In this case, the 16th and 48th layers are called cavity layers, and the film thickness of the low refractive material of these layers is a film thickness of 6/4 wavelength at a photometric wavelength of 1550 nm. The substrate temperature and pressure during film formation and the high frequency power applied to the substrate dome are as follows: the substrate temperature is 400 ° C., the pressure of the high refractive material is 2.0 × 10 ⁻² Pa, the high frequency power is 1400 W, and the pressure of the low refractive material is 1.5 × 10 ⁻² Pa and high frequency power were 1200 W.
[0035]
As a condition for measuring the central wavelength distribution of the film formation substrate, the central wavelength distribution of the substrate on which the dielectric was deposited was measured from the substrate center to a position 20 mm in the X-axis direction and the Y-axis direction using a spectrum analyzer.
FIG. 8 shows that the central wavelength distribution within a range of 20 mm from the center of the substrate is a highly uniform distribution within a range of 1550.1 nm to 1550.4 nm.
[0036]
[Explanation of other examples, explanation of diversion examples for other uses]
The method and apparatus for controlling the film thickness distribution by rotating the substrate dome at a high speed is not limited to the manufacture of optical thin films, but also a sputtering apparatus used in the manufacture of thin films of electronic materials, and metals or dielectrics as evaporation materials. A film deposition with high film thickness distribution accuracy is possible even with a normal vapor deposition apparatus, and an improvement in product yield can be expected. In particular, the present invention can be applied to an ion beam sputtering apparatus that will attract attention as a future optical thin film manufacturing apparatus.
[0037]
【The invention's effect】
In the present invention, when a substrate dome is rotated at 100 rpm in order to form a bandpass filter (BPF) for high-density multi-wavelength communication (DWDM) or the like that requires high film thickness distribution accuracy with respect to the film thickness. In addition, with respect to the maximum film thickness deviation when the film is formed by rotating at 1000 rpm, the simulation of the formula (2) in which the film thickness distribution accuracy when the film is formed at 1000 rpm is improved 10 times as compared with the case where the film is rotated at 100 rpm. Based on the results, it was possible to rotate the substrate dome at high speed while supplying high-frequency power, thereby greatly improving the film thickness distribution accuracy on the substrate.
[0038]
In addition, the use of a magnetic fluid bearing that can maintain a high vacuum inside the vacuum chamber during high-speed rotation suppresses deterioration of the rotary shaft due to friction at high-speed rotation of 1000 rpm or more and stability of the degree of vacuum. This makes it possible to stably supply high-frequency power to the substrate dome.
[0039]
Regarding the high-frequency power supply to the substrate dome, since the high-frequency power must be supplied to the substrate dome that rotates at a high speed of 1000 rpm or more, abnormal discharge is likely to occur. Therefore, the material of the contact shaft has high electrical conductivity and hardness. Use a large contact, and conversely, use a contact with good electrical conductivity and low hardness from the viewpoint of consumables. Further, regarding the contact mechanism, the contact and contact shaft are used to stably supply high-frequency power to the substrate dome. In consideration of the adhesiveness of the contact portion, the occurrence of abnormal discharge can be greatly reduced by a structure in which the contact is pressed against the contact shaft by a coil spring having a spring constant within a certain range in which abnormal discharge is difficult to occur.
By adding the new mechanism as described above, it becomes possible to manufacture a bandpass filter for DWDM with good film thickness distribution accuracy.
[0040]
There is also expectation for the production of a bandpass filter for DWDM corresponding to the next-generation narrower wavelength interval.
[Brief description of the drawings]
FIG. 1 is a schematic explanatory view of a conventional optical thin film manufacturing apparatus.
FIG. 2 is an explanatory diagram showing that a desired film thickness distribution can be obtained by the present invention.
FIG. 3 is a schematic explanatory view of a high-speed rotation mechanism unit of the present invention.
FIG. 4 is a schematic explanatory view showing a conventional high-frequency power supply mechanism.
FIG. 5 is a schematic explanatory diagram of a high-frequency power supply mechanism of the present invention.
FIG. 6A is a detailed explanatory diagram of the high-frequency power supply mechanism of the present invention.
FIG. 6b is a detailed explanatory view of the high-frequency power supply mechanism of the present invention.
FIG. 7 is a schematic explanatory view showing an optical thin film manufacturing apparatus of the present invention.
FIG. 8 is an optical characteristic diagram of a DWDM BPF manufactured using the optical thin film manufacturing apparatus of the present invention.
[Explanation of symbols]
1. Vacuum chamber 2. 2. Vacuum exhaust port 3. Gas inlet Substrate 5. Substrate dome 6. Evaporation source8. Thermionic emission mechanism10. Evaporation source shutter 11. Monitoring board 12. 14. Optical film thickness meter Shield 14. High frequency power supply 15. Matching box 16. High-frequency power supply mechanism 17. Control device 18. Projector 19. Light receiver 20. Motor 21. Belt 22. Pulley 23. Rotating shaft 24. Rotating unit 25. Magnetic seal unit 26. Combined angular bearing 27. Magnetic seal 28. Fixing screw 30. Insulator 31. Insulator 32. Contact shaft 33. Screw 34. Contact 35a. Contact base 35b. Contact base 36. Insulator 37. Power supply base 38. Bolt 39. Feeding plate 40. spring

Claims (4)

An optical thin film manufacturing apparatus,
Vacuum chamber (1),
A substrate dome (5) in the vacuum chamber;
A rotating shaft (23) for transmitting rotational force from the outside of the vacuum chamber to the substrate dome,
Is fixed to the outer wall of the vacuum vessel is inserted the rotary shaft, a magnetic seal unit (25) to maintain the gas-tightness of the vacuum vessel by the magnetic fluid, and the rotational axis direction to support the outer peripheral surface of the rotary shaft a plurality of viewing including angular bearing (26) therein, said magnetic seal unit which is fixed to the rotary shaft coaxially rotational unit provided in spaced (24)
An optical thin film manufacturing apparatus in which the magnetic seal unit and the rotating unit are integrated by a flange structure. The optical thin film manufacturing apparatus according to claim 1, further comprising:
A contact shaft (32) that is fixed to the substrate dome coaxially with the rotating shaft and transmits the applied high-frequency power to the substrate dome, and an insulator (30) inserted and fixed between the contact shaft and the rotating shaft )
An optical thin film manufacturing apparatus. The optical thin film manufacturing apparatus according to claim 2 , further comprising:
An optical thin film manufacturing apparatus comprising a high-frequency power supply mechanism (16) having a plurality of contacts (34) arranged along an outer peripheral surface of the contact shaft. The optical thin film manufacturing apparatus according to claim 3 , wherein the contact shaft comprises a contact shaft having a high hardness by subjecting an alloy mainly composed of an iron component to surface nitriding treatment,
In the high-frequency power supply mechanism, the plurality of contacts are made of a low-hardness contact made of a copper alloy, and the contact is pressed against the outer peripheral surface of the contact shaft by a coil spring.

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