JP3513474B2 - Large diameter ion source - Google Patents
Large diameter ion sourceInfo
- Publication number
- JP3513474B2 JP3513474B2 JP2000267957A JP2000267957A JP3513474B2 JP 3513474 B2 JP3513474 B2 JP 3513474B2 JP 2000267957 A JP2000267957 A JP 2000267957A JP 2000267957 A JP2000267957 A JP 2000267957A JP 3513474 B2 JP3513474 B2 JP 3513474B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- ion source
- cooling
- ion beam
- shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 72
- 238000001816 cooling Methods 0.000 claims description 45
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 239000011148 porous material Substances 0.000 claims description 20
- 230000001133 acceleration Effects 0.000 claims description 14
- 230000007246 mechanism Effects 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 58
- 239000013078 crystal Substances 0.000 description 34
- 238000005530 etching Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 15
- 238000009826 distribution Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 238000001659 ion-beam spectroscopy Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子デバイス、特
に圧電素子等の製造プロセスに用いるイオンビームエッ
チング用のイオン源に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion source for ion beam etching used in a manufacturing process of electronic devices, particularly piezoelectric elements.
【０００２】[0002]
【従来の技術】圧電素子、例えば水晶振動子の共振周波
数は素板となる水晶片の厚みと、その表面に形成された
金属膜電極の膜厚によって決定されるため、所望の周波
数の水晶振動子を得るためには、まず水晶片を規定の厚
みで切り出した後、表面を研磨し、その表面に真空蒸
着、又はスパッタ蒸着等によってベースとなる金属膜電
極を形成し、この水晶片をしかるべき容器に搭載した
後、１個づつ水晶振動子の周波数を測定しながら、真空
蒸着によって、ベース電極膜上に上層金属膜を形成して
いくと、水晶振動子の周波数は徐々に低くなるので、こ
の周波数が所定値になった時に上層金属膜の形成を停止
し、所望の周波数を得ている。2. Description of the Related Art Since the resonance frequency of a piezoelectric element, for example, a crystal oscillator, is determined by the thickness of a crystal piece, which is a base plate, and the film thickness of a metal film electrode formed on the surface of the crystal element, the crystal vibration of a desired frequency In order to obtain a child, first, a crystal piece is cut out to a specified thickness, the surface is polished, a metal film electrode serving as a base is formed on the surface by vacuum deposition, sputter deposition, or the like, and this crystal piece is sized. After mounting in an appropriate container and measuring the frequency of each crystal unit one by one, when forming the upper metal film on the base electrode film by vacuum evaporation, the frequency of the crystal unit gradually decreases. When this frequency reaches a predetermined value, the formation of the upper metal film is stopped and the desired frequency is obtained.
【０００３】因みに、この真空蒸着の場合は、周波数調
整量が１０００ｐｐｍ程度の水晶振動子を、蒸着時間
２．５秒で所望値周波数の±２ｐｐｍ以内の高精度に周
波数調整することが可能である。Incidentally, in the case of this vacuum vapor deposition, it is possible to highly accurately adjust the frequency of a crystal oscillator having a frequency adjustment amount of about 1000 ppm within a desired value frequency of ± 2 ppm within a vapor deposition time of 2.5 seconds. .
【０００４】しかしながら、この様に真空蒸着によって
水晶振動子の周波数調整を行うと、ベース電極膜上に新
たな蒸着膜が形成されることによりＣＩ（クリスタルイ
ンピーダンス）値の増大や新たにスプリアスが発生した
り、既存のスプリアスレベルの増大による品質の劣化を
招く。又、周波数調整の蒸着膜は、製造コスト及び周波
数調整精度に重点が置かれてその蒸着速度が選択され、
また加熱ガス放出等の操作も行われないため、その膜質
がベース電極膜に比べて、密着性、充填密度、不純物濃
度、粒子径等の点で劣っており、更にベース電極膜と周
波数調整膜との間に境界層が存在することにより、水晶
振動子のエージング特性に悪影響を与える。However, when the frequency of the quartz oscillator is adjusted by vacuum vapor deposition in this way, a new vapor deposition film is formed on the base electrode film, so that the CI (crystal impedance) value increases and new spurious is generated. Or the deterioration of quality due to the increase of the existing spurious level. In addition, the deposition rate of the frequency adjustment, the deposition rate is selected with an emphasis on manufacturing cost and frequency adjustment accuracy,
In addition, since the operation such as heating gas release is not performed, the film quality is inferior to the base electrode film in terms of adhesion, packing density, impurity concentration, particle size, and the like. The existence of the boundary layer between and adversely affects the aging characteristics of the crystal unit.
【０００５】本願発明者は、これらを解決するために、
イオン源から引き出されるイオンビームによるエッチン
グによって水晶振動子の周波数を正確に調整する方法と
して、特願平１１−１３４７７３、特願２０００−０６
４５０２を提案した。In order to solve these problems, the present inventor has
As a method for accurately adjusting the frequency of the crystal resonator by etching with an ion beam extracted from an ion source, Japanese Patent Application No. 11-134773 and Japanese Patent Application No. 2000-06 are available.
Proposed 4502.
【０００６】図１は、そのイオンビームエッチングによ
る水晶振動子の周波数調整の概念図を示す。真空容器１
内を１０-3Ｐａ以下に排気した後、円筒状のイオン源２
内部に不活性ガス導入パイプ３からＡｒガスを導入し、
熱陰極４を通電加熱し、同じく円筒状の陽極５の外側に
配置した磁石９によって陽極に軸方向磁界を印加し、熱
陰極４と陽極５の間にマグネトロン放電を発生させ効率
良くＡｒプラズマ６を生成し、ビーム電源１２と、加速
電源１３によって加速電極８に高電圧を印加することに
よって、Ａｒの正イオンを引き出しイオンビーム１０を
形成して、このイオンビームをニュートラライザー１６
で発生される電子により中和し、中和されたビームを水
晶振動子２０の電極膜に照射しイオンエッチングするこ
とによって水晶振動子の周波数を変化させる。FIG. 1 is a conceptual diagram of the frequency adjustment of the crystal unit by the ion beam etching. Vacuum container 1
After evacuating the interior to 10 -3 Pa or less, a cylindrical ion source 2
Ar gas is introduced into the interior from the inert gas introduction pipe 3,
The hot cathode 4 is energized and heated, and an axial magnetic field is applied to the anode by a magnet 9 which is also arranged outside the cylindrical anode 5, and a magnetron discharge is generated between the hot cathode 4 and the anode 5 for efficient Ar plasma 6 By generating a high voltage and applying a high voltage to the accelerating electrode 8 by the beam power source 12 and the accelerating power source 13, the positive ions of Ar are extracted to form the ion beam 10, and this ion beam is neutralized by the neutralizer 16
Then, the frequency of the crystal oscillator is changed by irradiating the neutralized beam on the electrode film of the crystal oscillator 20 and performing ion etching.
【０００７】この時、水晶振動子の周波数を測定しなが
らエッチングを行うと、エッチングにより水晶振動子の
周波数は徐々に高くなって行くので、この周波数が所定
の周波数になったところでシャッター１９を閉じてエッ
チングを停止し、所望の周波数を得ている。周波数調整
された水晶振動子２０は搬送レール２１によって、キャ
リヤ２２毎に取出室（図示しない）へ送られ取り出され
る。At this time, if the etching is performed while measuring the frequency of the crystal unit, the frequency of the crystal unit gradually increases due to the etching. Therefore, when the frequency reaches a predetermined frequency, the shutter 19 is closed. Then, the etching is stopped to obtain the desired frequency. The frequency-controlled crystal oscillator 20 is sent to and taken out of a take-out chamber (not shown) by the carrier rail 21 for each carrier 22.
【０００８】ここで、従来から行われてきた真空蒸着に
よる周波数調整装置では、調整レートは最大１０００〜
３０００ｐｐｍ／ｓｅｃ程度得られている。イオンエネ
ルギー（Ｖ）、イオンビーム電流密度Ｉｂｄ（ｍＡ／ｃ
ｍ2 ）で水晶振動子電極をスパッタエッチングする時の
エッチング速度Ｒ（ｐｐｍ／ｓｅｃ）は、水晶振動子電
極金属の分子量：Ｍ、水晶振動子周波数：Ｆ（Ｈｚ）、
素電荷：ｅ、アボガドロ数：ＮA 、水晶の周波数定数：
Ｎｑ、および水晶密度：Ｄｑを用いて、Here, in the conventional frequency adjusting device by vacuum vapor deposition, the adjusting rate is up to 1000-.
About 3000 ppm / sec is obtained. Ion energy (V), ion beam current density Ibd (mA / c
The etching rate R (ppm / sec) when the quartz oscillator electrode is sputter-etched at m 2 ) is as follows: molecular weight of the quartz oscillator electrode metal: M, quartz oscillator frequency: F (Hz),
Elementary charge: e, Avogadro's number: N A , crystal frequency constant:
Nq and crystal density: using Dq,
【数１】
となり、ＡＴカット水晶振動子でその電極材料がＡｇの
時、[Equation 1] And when the electrode material of the AT-cut crystal unit is Ag,
【数２】
で表され、スパッタ率Ｓは、図２のＷｈｎｅｒの実測値
で示されるように、イオンエネルギーで決まるため、水
晶振動子の周波数が決まり、イオンビームのエネルギー
が決まると、エッチング速度Ｒは、イオンビーム電流密
度Ｉｂｄに正比例する。[Equation 2] Since the sputtering rate S is determined by the ion energy as shown by the measured value of Whner in FIG. 2, when the frequency of the crystal resonator is determined and the energy of the ion beam is determined, the etching rate R is It is directly proportional to the beam current density Ibd.
【０００９】例えば、水晶振動子周波数Ｆ＝２０ＭＨ
ｚ、Ａｇの場合イオンエネルギー１０００Ｖ時のスパッ
タ率Ｓ＝４．１（図２参照）、イオンビーム電流密度Ｉ
ｂｄ＝１０ｍＡ／ｃｍ2 でエッチングする場合の調整レ
ートＲは、数式［数２］よりＲ＝２０７０ｐｐｍ／ｓｅ
ｃとなり、同じくイオンビーム電流密度Ｉｂｄ＝５ｍＡ
／ｃｍ2 時の調整レートは、Ｒ＝１０３５ｐｐｍ／ｓｅ
ｃとなる。For example, crystal oscillator frequency F = 20 MH
In the case of z and Ag, when the ion energy is 1000 V, the sputter rate S = 4.1 (see FIG. 2) and the ion beam current density I
The adjustment rate R in the case of etching at bd = 10 mA / cm 2 is R = 2070 ppm / se from the mathematical expression [Formula 2].
c, similarly, the ion beam current density Ibd = 5 mA
The adjustment rate at 1 / cm 2 is R = 1035 ppm / se
c.
【００１０】従って、本発明のイオン源を用いた周波数
調整装置で従来方法と同等の生産タクトを得るには、こ
れと同等の調整レート（少なくとも１０００〜２０００
ｐｐｍ／ｃｍ2 以上）が必要で、その為には上述の様
に、数式［数１］、および［数２］より、５〜１０ｍＡ
／ｃｍ2 以上のイオンビーム電流密度が必要となる。Therefore, in order to obtain a production tact equivalent to that of the conventional method with the frequency adjustment apparatus using the ion source of the present invention, an adjustment rate equivalent to this (at least 1000 to 2000).
ppm / cm 2 or more) is required, and for that purpose, as described above, from the formulas [Equation 1] and [Equation 2], 5 to 10 mA.
An ion beam current density of / cm 2 or more is required.
【００１１】このようなイオンビームエッチングでは、
ベース電極膜上に新たな膜を形成することが無いため、
ＣＩ値の増大、新たなスプリアスの発生、既存のスプリ
アスレベルの増大、エージング特性の悪化等を生じない
ため、高品位な水晶振動子が得られる。In such ion beam etching,
Since no new film is formed on the base electrode film,
A high-quality crystal oscillator can be obtained because an increase in CI value, generation of new spurious, increase in existing spurious level, deterioration of aging characteristics, etc. do not occur.
【００１２】[0012]
【発明が解決しようとする課題】この様にプラズマエッ
チング、イオンビームエッチング等のドライエッチング
による水晶振動子の周波数調整では、ＣＩ値、スプリア
ス、エージング特性において高品位な水晶振動子を得る
ことが出来るのであるが、周波数調整する水晶振動子
は、イオン源から引き出されるイオンビームの中心位置
へ１個づつ搬送され、エッチングすることによって周波
数調整が行われるため生産数量、或はコスト的にも限界
があった。Thus, by adjusting the frequency of the crystal unit by dry etching such as plasma etching or ion beam etching, it is possible to obtain a crystal unit of high quality in terms of CI value, spurious and aging characteristics. However, the crystal units for frequency adjustment are transported one by one to the central position of the ion beam extracted from the ion source, and the frequency is adjusted by etching, which limits the production quantity or cost. there were.
【００１３】特に近年伸長が著しい携帯電話等移動体通
信分野での半導体デバイス製造を中心に、イオンビーム
電流密度１０ｍＡ／ｃｍ2 以上の高密度、イオンビーム
の均一性±３％以内、イオンビーム電流密度の再現性±
１％以内と言う非常に高精度な要求と共に、より一層の
生産性向上が要望されて来た。Especially, in the field of semiconductor devices in the field of mobile communication such as mobile phones, which has been growing remarkably in recent years, high density of ion beam current density of 10 mA / cm 2 or more, uniformity of ion beam within ± 3%, ion beam current Density reproducibility ±
Along with the extremely high accuracy requirement of 1% or less, further improvement in productivity has been demanded.
【００１４】ここで、生産性を向上し、均一な性能を有
する水晶振動子を含めた圧電素子等のデバイスを効率良
く生産するためには、大口径のイオンビームを用いて複
数のデバイスを同時にエッチングして作製することが考
えられる。しかし、１０ｍＡ／ｃｍ2 という高電流密度
のイオンビームを得ようとすると、プラズマから入射す
る荷電粒子、および熱陰極からの輻射熱等により遮蔽電
極および加速電極に歪を生じる等の問題があった。Here, in order to improve productivity and efficiently produce a device such as a piezoelectric element including a crystal oscillator having uniform performance, a plurality of devices are simultaneously produced by using an ion beam having a large diameter. It can be considered to make it by etching. However, when trying to obtain an ion beam with a high current density of 10 mA / cm 2 , there was a problem that the shielded electrode and the accelerating electrode were distorted by charged particles entering from plasma, radiant heat from a hot cathode, and the like.
【００１５】本発明は、上述のような問題点を解決する
ために成されたもので、イオンビームエッチングによっ
て複数の水晶振動子の周波数を同時にしかも正確に調整
することが出来る、水晶振動子周波数調整用イオン源を
提供することを目的としている。The present invention has been made to solve the above-mentioned problems, and the frequency of a plurality of crystal resonators can be adjusted simultaneously and accurately by ion beam etching. The purpose is to provide a conditioning ion source.
【００１６】[0016]
【課題を解決するための手段】本発明の水晶振動子周波
数調整用イオン源は、イオンビーム電流密度１０ｍＡ／
ｃｍ2 以上、イオンビームの均一性±３％以内、イオン
ビーム電流密度の再現性±１％以内と言う高精度な要求
と、より一層の生産性向上を実現するために、イオン源
本体の内部に陽極と、複数の熱陰極と、複数の細孔を有
する遮蔽電極、及びイオン引き出し用で同形状の複数の
細孔を有する加速電極を設け、イオン源全体と遮蔽電極
及び加速電極に直接水冷ジャケットを取り付ける冷却構
造とし、大口径のビーム引き出し口を持つ構成とした。
又、陽極の外側に磁石を配置し、不活性ガス導入用パイ
プがイオン源本体に接続されている。ここで冷却された
加速電極をイオンビームの断面に渡って複数の細孔をも
つ構造としたことでビームの断面に等しく加速電圧を掛
けられることとなり、ビームの均一性が向上する。The ion source for adjusting the frequency of the crystal oscillator according to the present invention has an ion beam current density of 10 mA /
cm 2 or more, ion beam uniformity ± 3% or less, ion beam current density reproducibility ± 1% or less, and to further improve productivity An anode, a plurality of hot cathodes, a shield electrode having a plurality of pores, and an acceleration electrode having a plurality of pores of the same shape for extracting ions are provided, and the entire ion source, the shield electrode and the acceleration electrode are directly water-cooled. It has a cooling structure with a jacket attached and a beam outlet with a large diameter.
Further, a magnet is arranged outside the anode, and an inert gas introducing pipe is connected to the ion source body. Since the cooled accelerating electrode has a structure having a plurality of pores over the cross section of the ion beam, the accelerating voltage can be applied equally to the cross section of the beam, and the uniformity of the beam is improved.
【００１７】また陽極と遮蔽電極の間にシールド板を設
けた。ここでシールド板は、プラズマからの荷電粒子、
および熱陰極からの輻射熱が直接電極へ到達することに
よる遮蔽電極および加速電極の歪を抑制し、つまりイオ
ンビームの出力低下をふせぐと共に、電極に近接して配
置することによってイオンビームの直進性を向上し、イ
オンビームの断面における電流密度の均一さを更に改善
している。A shield plate was provided between the anode and the shield electrode. Here, the shield plate is charged particles from the plasma,
And suppress the distortion of the shield electrode and the acceleration electrode due to the radiant heat from the hot cathode reaching the electrode directly, that is, suppressing the output reduction of the ion beam, and by arranging it close to the electrode, the straightness of the ion beam is improved. The uniformity of the current density in the cross section of the ion beam is further improved.
【００１８】更に、遮蔽電極及び加速電極の取り付けね
じの相対する位置に、ねじの逃げ機構を設け、グリッド
間のギャップ１ｍｍ以下を確保し、グリッドのメンテナ
ンス性を損なうこと無く冷却効果が得られる構造とし
た。Further, a structure is provided in which a screw escape mechanism is provided at a position where the mounting screws of the shield electrode and the accelerating electrode are opposed to each other, a gap between grids of 1 mm or less is secured, and a cooling effect is obtained without impairing the maintainability of the grid. And
【００１９】[0019]
【発明の実施の形態】（１）実施例の構成の説明
図３Ａは、本発明による水晶振動子周波数調整用大口径
イオン源を示す断面図であり、図３Ｂは、斜視断面図で
ある。図１と対応する部分には同じ符号を付して示す。BEST MODE FOR CARRYING OUT THE INVENTION (1) Description of Configuration of Embodiment FIG. 3A is a sectional view showing a large diameter ion source for crystal oscillator frequency adjustment according to the present invention, and FIG. 3B is a perspective sectional view. Portions corresponding to those in FIG. 1 are designated by the same reference numerals.
【００２０】この発明では、イオン源本体２の内部に、
発生するイオンビームを囲むように配置された陽極５
と、複数の熱陰極４と、複数の細孔を有するイオン引き
出し用の遮蔽電極７と、遮蔽電極と同形状の複数の細孔
を有する加速電極８（遮蔽電極、および加速電極の細孔
の形状、数は用途に応じて異なる場合もある）とが設け
てあり、イオン源本体２、遮蔽電極７、及び加速電極８
には、各々水冷ジャケット２３、２４、２５が直接取り
付けられている。ここで装置の発熱量に応じて水冷ジャ
ケットは適宜追加、または削減される。３４は水冷ジャ
ケットに設けられた冷却水流路を示す。又、陽極５の外
側を囲むように磁石９を配置し、不活性ガス導入用パイ
プ３がイオン源本体２に接続されている。In the present invention, inside the ion source body 2,
Anode 5 arranged so as to surround the generated ion beam
And a plurality of hot cathodes 4, a shield electrode 7 for extracting ions having a plurality of pores, and an acceleration electrode 8 having a plurality of pores of the same shape as the shield electrode (shield electrode and pores of the acceleration electrode). The shape and the number may differ depending on the application), and the ion source body 2, the shield electrode 7, and the acceleration electrode 8 are provided.
The water cooling jackets 23, 24, 25 are directly attached to each of them. Here, the water cooling jacket is appropriately added or removed depending on the amount of heat generated by the device. Reference numeral 34 indicates a cooling water passage provided in the water cooling jacket. A magnet 9 is arranged so as to surround the outside of the anode 5, and an inert gas introducing pipe 3 is connected to the ion source body 2.
【００２１】一方、搬送レール２１上には、キャリヤ２
２に搭載された複数の水晶振動子２０がセットされ、複
数のシャッター１９が取りつけられる。On the other hand, the carrier 2 is mounted on the carrier rail 21.
A plurality of crystal oscillators 20 mounted in No. 2 are set, and a plurality of shutters 19 are attached.
【００２２】図４Ａおよび図４Ｂは、陽極と遮蔽電極の
間に取り付けたシールド板の取り付け構造を示す概略図
である。温度上昇による遮蔽電極７の歪を抑制するため
に、イオン源本体２の内部に設けられた陽極５の長辺方
向の開口長（ａ）に対して、約（０．８ａ）、同じく短
辺方向の開口長（ｂ）に対して約（０．３ｂ）の開口面
積（イオンビームとなる）をもつ遮蔽電極７および加速
電極８とほぼ同等な大きさ（０．８ａ×０．３ｂ）の間
口面積をもつシールド板２６を、陽極５と遮蔽電極７の
間に設置した。ただし、これはおおまかな目安であり陽
極５や遮蔽電極７などの配置様式に変更が加えられた場
合、それに応じて変化する。4A and 4B are schematic views showing the mounting structure of the shield plate mounted between the anode and the shield electrode. In order to suppress the distortion of the shield electrode 7 due to the temperature rise, the opening length (a) in the long side direction of the anode 5 provided inside the ion source body 2 is approximately (0.8a), and the short side is also the same. Of the same size (0.8a × 0.3b) as the shield electrode 7 and the accelerating electrode 8 having an opening area (which becomes an ion beam) of about (0.3b) with respect to the opening length (b) in the direction. A shield plate 26 having a frontage area was installed between the anode 5 and the shield electrode 7. However, this is a rough guideline, and when the arrangement manner of the anode 5, the shield electrode 7, etc. is changed, it is changed accordingly.
【００２３】図５は、グリッド間のギャップ１ｍｍ以下
を確保するための、ねじの逃げ機構の概略部分構造図を
示す。遮蔽電極７は、イオン源本体を取り付けた水冷ジ
ャケット２４に遮蔽電極取り付けねじ２７によって固定
される。又、加速電極８は、水冷ジャケット２５に加速
電極取り付けねじ２９によって固定される。更に、水冷
ジャケット２４と水冷ジャケット２５は、取り付けねじ
３１によって固定一体化される。FIG. 5 is a schematic partial structural view of a screw escape mechanism for ensuring a gap of 1 mm or less between grids. The shield electrode 7 is fixed to the water cooling jacket 24 to which the ion source body is attached by the shield electrode attaching screw 27. Further, the accelerating electrode 8 is fixed to the water cooling jacket 25 with an accelerating electrode mounting screw 29. Further, the water cooling jacket 24 and the water cooling jacket 25 are fixed and integrated by a mounting screw 31.
【００２４】この時、遮蔽電極取り付けねじ２７に対し
ては水冷ジャケット２５を貫通して設けられた丸穴２８
と、加速電極取り付けねじ２９に対しては水冷ジャケッ
ト２４に設けられた丸穴３０が、各々取り付けねじの逃
げ機構となり遮蔽電極７と加速電極８とのギャップ３２
は１ｍｍ以下に確保される。At this time, a round hole 28 is formed through the water cooling jacket 25 for the shield electrode mounting screw 27.
With respect to the accelerating electrode mounting screw 29, the round holes 30 provided in the water cooling jacket 24 each serve as a mounting screw escape mechanism, and a gap 32 between the shield electrode 7 and the accelerating electrode 8 is formed.
Is less than 1 mm.
【００２５】ここで、取り付けねじ３１によって固定一
体化され、イオン源の組み立てが完了するが、例えば遮
蔽電極と加速電極のイオンビーム引出用細孔の穴位置が
若干ズレて組み立てられた場合、高電流密度のイオンビ
ームを得ることが不可能となる。この様な場合は、前記
水冷ジャケット２５を貫通して設けられた丸穴２８か
ら、遮蔽電極取り付けねじ２７をゆるめて電極の穴位置
を合わせることも可能となり、優れたサービス性を示す
構成とした。Here, the ion source is fixedly integrated by the mounting screw 31 and the assembling of the ion source is completed. For example, when the hole positions of the ion beam extraction pores of the shield electrode and the accelerating electrode are slightly misaligned and assembled, It becomes impossible to obtain an ion beam with a current density. In such a case, it is possible to loosen the shield electrode mounting screw 27 from the round hole 28 provided through the water cooling jacket 25 to align the hole position of the electrode, which is a configuration showing excellent serviceability. .
【００２６】又、一定期間が経過して電極の交換が必要
となった場合は、取り付けねじ３１を取り外すのみで、
水冷ジャケット２４と水冷ジャケット２５は分離するこ
とが出来、遮蔽電極７を交換する場合は取り付けねじ２
７を、加速電極８を交換する場合は取り付けねじ２９を
取り外すのみで容易に遮蔽電極および加速電極を交換す
ることが出来、メンテナンス性に優れた構造となってい
る。When the electrode needs to be replaced after a certain period of time, the mounting screw 31 is simply removed.
The water cooling jacket 24 and the water cooling jacket 25 can be separated, and when the shield electrode 7 is replaced, the mounting screw 2
When the accelerating electrode 7 is replaced, the shield electrode and the accelerating electrode can be easily replaced by simply removing the mounting screw 29, and the structure has excellent maintainability.
【００２７】本実施例の構成では熱陰極を２つ有する矩
形状のイオン源を例に記述しているが、本発明はこの構
成に制限されることなく、複数の熱陰極を線状、アレイ
状、十字状、同心円状に配置することも可能であり、さ
らなる大型化に伴う均一性の改善のために加速電極の細
孔の密度を変化させる、あるいは加速電極をいくつかの
領域に分けて、異なる加速電圧を印加するといった変更
も、当業者には容易に想定できるだろう。In the structure of this embodiment, a rectangular ion source having two hot cathodes is described as an example, but the present invention is not limited to this structure, and a plurality of hot cathodes are arranged in a linear array. It is also possible to arrange them in the shape of a circle, a cross, or concentric circles.The density of the pores of the accelerating electrode can be changed to improve the uniformity with further enlargement, or the accelerating electrode can be divided into several areas. A person skilled in the art can easily envision changes such as applying different acceleration voltages.
【００２８】（２）実施例の作用・動作の説明
真空容器１内部を、１０-3Ｐａ以下に排気した後、不活
性ガス導入パイプ３からイオン源２内部にＡｒガスを導
入し、複数の熱陰極４を熱陰極電源１４によって通電加
熱し、同じく陽極５の外側に配置した磁石９によって陽
極に垂直方向の磁界を発生させ、熱陰極４と陽極５の間
にマグネトロン放電を発生させＡｒプラズマ６を生成
し、ビーム電源１２と、加速電源１３によって加速電極
８に高電圧を印加することによって、Ａｒの正イオンを
引き出し、イオンビーム１０を形成する。加速電極はイ
オンビーム引き出し有効面積にわたって、複数の細孔を
もつ構造となっているためにビームの断面に均一に電圧
を印加することが出来る。(2) Description of the operation and operation of the embodiment After evacuating the inside of the vacuum container 1 to 10 -3 Pa or less, Ar gas is introduced into the ion source 2 from the inert gas introducing pipe 3 to obtain a plurality of gases. The hot cathode 4 is energized and heated by the hot cathode power source 14, and a magnetic field in the vertical direction is generated by the magnet 9 also arranged outside the anode 5 to generate a magnetron discharge between the hot cathode 4 and the anode 5 to generate Ar plasma. 6 is generated, and a high voltage is applied to the acceleration electrode 8 by the beam power source 12 and the acceleration power source 13 to extract the positive ions of Ar and form the ion beam 10. Since the accelerating electrode has a structure having a plurality of pores over the effective area for extracting the ion beam, a voltage can be uniformly applied to the cross section of the beam.
【００２９】この時複数の熱陰極から発生する熱によっ
てイオン源２内部は非常に高い温度迄上昇するが、図３
Ａおよび図３Ｂに示す様にイオン源本体２に水冷ジャケ
ット２３を、遮蔽電極７に水冷ジャケット２４を、及び
加速電極８に水冷ジャケット２５を、それぞれ直接取り
付ける冷却構造として温度の上昇は抑制される。又図４
Ａおよび図４Ｂに示す様に陽極５と遮蔽電極７との間に
イオンビーム引き出し有効面積とほぼ同じ大きさの開口
を有するシールド板２６を設けて、電極に入射するプラ
ズマからの荷電粒子、および熱陰極からの輻射熱をイオ
ン源本体へ逃がすことによって、遮蔽電極７および加速
電極８の変形を防ぐ。更に遮蔽電極７及び加速電極８の
取り付けねじ２７、２９の相対する位置に、ねじの逃げ
機構２８、３０を設けて、加速電極と遮蔽電極の間のギ
ャップを１ｍｍ以下に確保したことにより、イオンビー
ム引き出し有効幅６０ｍｍで、しかもイオンビーム電流
密度１０ｍＡ／ｃｍ2 以上、イオンビームの均一性±３
％以内、イオンビーム電流密度の再現性（経時変化）±
１％以内と言う高精度なイオンビーム１０を得ることが
でき、これによってキャリヤ２２に搭載された複数の水
晶振動子２０を同時にイオンビームエッチングして周波
数調整することが可能となった。At this time, the inside of the ion source 2 rises to a very high temperature due to the heat generated from the plurality of hot cathodes.
As shown in A and FIG. 3B, the water cooling jacket 23 is directly attached to the ion source body 2, the water cooling jacket 24 is attached to the shield electrode 7, and the water cooling jacket 25 is attached to the acceleration electrode 8. . See also FIG.
As shown in FIG. 4A and FIG. 4B, a shield plate 26 having an opening having substantially the same size as the ion beam extraction effective area is provided between the anode 5 and the shield electrode 7, and charged particles from the plasma incident on the electrode, and The deformation of the shield electrode 7 and the acceleration electrode 8 is prevented by radiating the radiant heat from the hot cathode to the ion source body. Further, screw escape mechanisms 28 and 30 are provided at positions where the attaching screws 27 and 29 of the shield electrode 7 and the accelerating electrode 8 are opposed to each other, and the gap between the accelerating electrode and the shielding electrode is secured to 1 mm or less. Beam extraction effective width 60 mm, ion beam current density 10 mA / cm 2 or more, ion beam uniformity ± 3
%, Reproducibility of ion beam current density (change over time) ±
It is possible to obtain a highly accurate ion beam 10 within 1%, which makes it possible to simultaneously perform ion beam etching on a plurality of crystal oscillators 20 mounted on the carrier 22 to adjust the frequency.
【００３０】図６Ａは、イオン源本体２に水冷ジャケッ
ト２３のみを取り付けた場合のイオン源本体と、遮蔽電
極７の中央部及び複数の細孔（グリッド）左右の温度
を、放電開始から時間と共にプロットしたもので、３０
分位でイオン源本体は７０℃、複数の細孔の中央部が２
６０℃、複数の細孔の左右が２１０℃と非常に高温にな
っている。FIG. 6A shows the temperature of the ion source main body when only the water cooling jacket 23 is attached to the ion source main body 2, the central portion of the shield electrode 7 and the temperatures on the left and right of a plurality of pores (grids) with time from the start of discharge. It ’s a plot of 30
In the quantile, the ion source body is 70 ° C, and the central part of the plurality of pores is 2
The temperature is 60 ° C., and the left and right sides of the plurality of pores are 210 ° C., which are extremely high temperatures.
【００３１】図６Ｂは、同じくイオン源本体に水冷ジャ
ケット２３のみを取り付けた場合のイオンビーム電流密
度分布の均一性を表すもので、放電電流が１．０Ａの
時、イオンビーム電流密度は約４〜４．５ｍＡ／ｃｍ2
であるが、放電電流３．５Ａの時のイオンビーム電流密
度は約７〜１０ｍＡ／ｃｍ2 と均一性としては非常に悪
い状態である。FIG. 6B shows the uniformity of the ion beam current density distribution when only the water cooling jacket 23 is attached to the main body of the ion source. When the discharge current is 1.0 A, the ion beam current density is about 4. ~ 4.5 mA / cm 2
However, when the discharge current is 3.5 A, the ion beam current density is about 7 to 10 mA / cm 2, which is a very poor uniformity.
【００３２】図７Ａは、イオン源本体２に水冷ジャケッ
ト２３を取り付け、更にシールド２６を取り付けた場合
のイオン源本体と遮蔽電極の中央部及び複数の細孔（グ
リッド）の左右の放電開始からの温度分布を示す。３０
分位でイオン源本体は約６０℃と若干低くなっている
が、複数の細孔の中央部および左右共に約１７０℃と、
シールド板２６は熱伝導率の高い材質を用いて、遮蔽電
極７の熱を本体側に逃がすので、図６Ａと比較してシー
ルド板２６を取り付けたことによる遮蔽電極７の温度上
昇の抑制効果が顕著に現れている。FIG. 7A shows the case where the water cooling jacket 23 is attached to the ion source body 2 and the shield 26 is further attached, and the ion source body and the central portion of the shielding electrode and the left and right discharge start of a plurality of pores (grids) are started. The temperature distribution is shown. Thirty
At the quantile, the main body of the ion source is about 60 ° C, which is slightly lower, but about 170 ° C at both the center and the left and right of the multiple pores.
Since the shield plate 26 is made of a material having a high thermal conductivity and allows the heat of the shield electrode 7 to escape to the main body side, the effect of suppressing the temperature rise of the shield electrode 7 due to the attachment of the shield plate 26 is better than that of FIG. 6A. It is noticeable.
【００３３】図７Ｂは、図７Ａと同じ条件下でのイオン
ビーム電流密度分布の均一性を示すもので、放電電流
３．０Ａの時のイオンビーム電流密度は９〜９．５ｍＡ
／ｃｍ2 と図６Ｂに比べて、シールド板を取り付けたこ
とにより均一性も大きく改善されることが理解される。FIG. 7B shows the uniformity of the ion beam current density distribution under the same conditions as in FIG. 7A. The ion beam current density at a discharge current of 3.0 A is 9 to 9.5 mA.
/ Cm 2 and FIG. 6B, it is understood that the attachment of the shield plate also greatly improves the uniformity.
【００３４】図７Ｃは、図７Ａと同じ条件下でのイオン
ビーム電流密度の経時変化を示したものである。放電開
始からのイオンビーム電流密度の変化を時間と共にプロ
ットしたもので、イオンビーム電流密度の均一性は保た
れているが、時間と共にイオンビーム電流密度が低下
し、３０分で約１０〜９ｍＡ／ｃｍ2 に（１０％）変化
して経時変化としては余り良くない状態である。FIG. 7C shows a change over time in the ion beam current density under the same conditions as in FIG. 7A. The change in the ion beam current density from the start of discharge is plotted with time. Although the uniformity of the ion beam current density is maintained, the ion beam current density decreases with time, and about 10 to 9 mA / The change with time (10%) to cm 2 is not so good as the change over time.
【００３５】図８Ａは、本願発明の構成を全て取入れた
場合のイオン源本体と、遮蔽電極の複数の細孔（グリッ
ド）中央部および左右の放電開始からの温度分布を示
す。イオン源本体は約２８℃で殆ど温度上昇は無く、又
複数の細孔の中央部、左右共、放電開始後５分で約７０
℃平衡状態となり、水冷ジャケット２３、２４、２５及
びシールド板２６を取り付け、グリッド間のギャップを
１ｍｍ以下に確保した本願構成による各部の温度上昇に
対する抑制効果が非常に顕著であることが判る。FIG. 8A shows the temperature distribution from the start of discharge on the ion source main body, the central portion of a plurality of pores (grids) of the shield electrode and the left and right discharges when all the configurations of the present invention are incorporated. The temperature of the main body of the ion source is about 28 ° C and there is almost no temperature rise, and the central portion of the plurality of pores, both left and right, is about 70 minutes after the start of the discharge.
It can be seen that the effect of suppressing the temperature rise of each part by the configuration of the present invention in which the water cooling jackets 23, 24, 25 and the shield plate 26 are attached and the gap between the grids is secured to 1 mm or less is very remarkable in the equilibrium state at ℃.
【００３６】図８Ｂは、本願発明の構成を全て取り入れ
た場合のイオンビーム電流密度分布の均一性を示すもの
で、放電電流３．０Ａ時のイオンビーム電流密度は１
０．８〜１１．３ｍＡ／ｃｍ2 と優れた均一性を示す。FIG. 8B shows the uniformity of the ion beam current density distribution when all the configurations of the present invention are incorporated. The ion beam current density at a discharge current of 3.0 A is 1
It shows excellent uniformity of 0.8 to 11.3 mA / cm 2 .
【００３７】図８Ｃは、同じく本願発明の構成を全て取
入れた場合のイオンビーム電流密度の経時変化を示した
ものである。イオンビーム電流密度の均一性３％以内と
共に、放電開始後３０分でのイオンビーム電流密度の経
時変化も１％以内に抑えることができた。FIG. 8C shows the change over time in the ion beam current density when all the configurations of the present invention are incorporated. The uniformity of the ion beam current density was within 3%, and the change with time of the ion beam current density 30 minutes after the start of discharge could be suppressed within 1%.
【００３８】（３）他の実施例の説明、他の用途への転
用例の説明
近年のオプトエレクトロニクス業界における通信機器、
液晶機器（つまりＣＤ・ＭＤ・ＤＶＤプレーヤ、液晶プ
ロジェクタ、デジタルカメラ・ビデオ、光通信）等多く
の製品分野に光学部品のミラー、及びフィルター等が数
多く使用されている。(3) Description of other embodiments, description of application to other uses Communication equipment in the optoelectronics industry in recent years,
Many mirrors and filters of optical parts are used in many product fields such as liquid crystal devices (that is, CD / MD / DVD players, liquid crystal projectors, digital cameras / videos, optical communications).
【００３９】これらの光学薄膜デバイスは、薄膜が高充
填密度で低損失で有ること、基板の吸収及び内部・表面
散乱が極力小さいこと、経時変化が少ないこと等、高機
能・高精度な薄膜を効率的に形成する技術を必要として
いる。These optical thin film devices are high-performance, high-precision thin films such that the thin film has a high packing density and low loss, the absorption of the substrate and the internal / surface scattering are as small as possible, and the change over time is small. There is a need for efficient forming technology.
【００４０】図９は、これらの要求を満たすべく本願発
明のイオン源をＩＢＳ（イオンビームスパッタ）装置へ
応用した場合の概念図を示す。FIG. 9 is a conceptual diagram when the ion source of the present invention is applied to an IBS (ion beam sputtering) device in order to satisfy these requirements.
【００４１】真空容器１内を１０-6Ｐａ程度の高真空領
域まで排気した後、スパッタ用イオン源２を駆動してイ
オンビーム１０を、ターゲットホルダー５０に取り付け
られたターゲット５１に照射することによって、基板ホ
ルダー５６に取り付けられた基板５７上に高充填密度の
光学薄膜を形成するもので、多層膜用にターゲットホル
ダー５０には複数のターゲット５１、５２、５３、５４
が搭載され、更にアシスト用イオン源５８が設けられて
いる。By evacuating the inside of the vacuum container 1 to a high vacuum region of about 10 -6 Pa, the sputtering ion source 2 is driven to irradiate the target 51 attached to the target holder 50 with the ion beam 10. , A high packing density optical thin film is formed on a substrate 57 attached to a substrate holder 56, and a plurality of targets 51, 52, 53, 54 are provided in a target holder 50 for a multilayer film.
Is mounted, and an assisting ion source 58 is further provided.
【００４２】本願発明のイオン源を、このようなＩＢＳ
装置のイオン源として用いる場合は、安定した成膜レー
トが得られることによって、高機能で高精度な光学薄膜
を成膜することが可能となる。The ion source of the present invention is provided with such an IBS.
When it is used as an ion source of the apparatus, a stable film formation rate can be obtained, so that a highly functional and highly accurate optical thin film can be formed.
【００４３】[0043]
【発明の効果】本発明によるイオン源は、イオンビーム
電流密度１０ｍＡ／ｃｍ2 以上の高密度で、イオンビー
ムの均一性±３％以内、イオンビーム電流密度の再現性
（経時変化）±１％以内と言う非常に高精度で、しかも
大きなイオンビーム取出し有効面積を有することによ
り、圧電素子等を複数同時エッチングして周波数調整を
行うことが可能となり、その生産性を大きく向上するこ
とが出来る。又、ＩＢＳ（イオンビームスパッタ）装置
等に応用した場合は、高機能で高精度な光学薄膜を効率
よく成膜することが可能となる。The ion source according to the present invention has a high ion beam current density of 10 mA / cm 2 or more, an ion beam uniformity of ± 3% or less, and an ion beam current density reproducibility of ± 1%. Since it is highly accurate and has a large effective area for extracting the ion beam, it is possible to simultaneously etch a plurality of piezoelectric elements and the like to adjust the frequency and greatly improve the productivity. When applied to an IBS (ion beam sputtering) device or the like, it becomes possible to efficiently form a highly functional and highly accurate optical thin film.
【図１】従来のイオン源による圧電素子の周波数調整の
概念図である。FIG. 1 is a conceptual diagram of frequency adjustment of a piezoelectric element by a conventional ion source.
【図２】イオンエネルギーとスパッタ率の関係を示した
図である。FIG. 2 is a diagram showing a relationship between ion energy and a sputtering rate.
【図３Ａ】本発明によるイオン源の概略を示す断面図で
ある。FIG. 3A is a schematic sectional view of an ion source according to the present invention.
【図３Ｂ】本発明によるイオン源の概略を示す斜視断面
図である。FIG. 3B is a perspective sectional view schematically showing an ion source according to the present invention.
【図４Ａ】陽極と遮蔽電極間に取り付けたシールド板の
概略を示す横方向断面図である。FIG. 4A is a lateral cross-sectional view schematically showing a shield plate attached between an anode and a shield electrode.
【図４Ｂ】陽極と遮蔽電極間に取り付けたシールド板の
概略を示す内側からの断面図である。FIG. 4B is a cross-sectional view from the inside showing the outline of the shield plate attached between the anode and the shield electrode.
【図５】遮蔽電極及び加速電極と水冷ジャケットとの取
り付け部分構造図である。FIG. 5 is a structural view of a part where the shield electrode, the acceleration electrode and the water cooling jacket are attached.
【図６Ａ】イオン源本体２のみ水冷した場合の、イオン
源本体及び遮蔽電極の温度分布グラフを示す図である。FIG. 6A is a diagram showing a temperature distribution graph of the ion source body and the shield electrode when only the ion source body 2 is water-cooled.
【図６Ｂ】イオン源本体２のみ水冷した場合の、イオン
ビーム電流密度分布の均一性を表すグラフ図である。FIG. 6B is a graph showing the uniformity of the ion beam current density distribution when only the ion source body 2 is water-cooled.
【図７Ａ】イオン源本体２のみ水冷し、更にシールド板
２６を取り付けた場合のイオン源本体及び遮蔽電極の温
度分布グラフ図である。FIG. 7A is a temperature distribution graph of the ion source body and the shield electrode when only the ion source body 2 is water-cooled and a shield plate 26 is further attached.
【図７Ｂ】イオン源本体２のみ水冷し、更にシールド板
２６を取り付けた場合のイオンビーム電流密度分布の均
一性を表すグラフ図である。FIG. 7B is a graph showing the uniformity of the ion beam current density distribution when only the ion source body 2 is water-cooled and the shield plate 26 is attached.
【図７Ｃ】イオン源本体２のみ水冷し、更にシールド板
２６を取り付けた場合のイオンビーム電流密度の再現性
（経時変化）を表すグラフ図である。FIG. 7C is a graph showing ion beam current density reproducibility (change with time) when only the ion source body 2 is water-cooled and a shield plate 26 is further attached.
【図８Ａ】本願発明の構成を全て取入れた場合のイオン
源本体及び遮蔽電極の温度分布グラフ図である。FIG. 8A is a temperature distribution graph of the ion source body and the shield electrode when all the configurations of the present invention are incorporated.
【図８Ｂ】本願発明の構成を全て取入れた場合のイオン
ビーム電流密度分布の均一性を表すグラフ図である。FIG. 8B is a graph showing the uniformity of ion beam current density distribution when all the configurations of the present invention are incorporated.
【図８Ｃ】本願発明の構成を全て取入れた場合のイオン
ビームの再現性（経時変化）を表すグラフ図である。FIG. 8C is a graph showing the reproducibility (change with time) of the ion beam when all the configurations of the present invention are incorporated.
【図９】本発明のイオン源をＩＢＳ装置に応用した場合
の概念図である。FIG. 9 is a conceptual diagram when the ion source of the present invention is applied to an IBS device.
１ 真空容器
２ イオン源本体
３ 不活性ガス導入パイプ
４ 熱陰極
５ 陽極
６ Ａｒプラズマ
７ 遮蔽電極
８ 加速電極
９ 磁石
１０ イオンビーム
１１ 放電電源
１２ ビーム電源
１３ 加速電源
１４ 熱陰極電源
１５ ビーム電源スイッチ
１６ ニュートラライザー
１７ ニュートラライザー電源
１８ エミッション電流
１９ シャッター
２０ 水晶振動子
２１ 搬送レール
２２ キャリヤ
２３ 水冷ジャケット１
２４ 水冷ジャケット２
２５ 水冷ジャケット３
２６ シールド板
２７ 遮蔽電極取り付けねじ
２８ 遮蔽電極取り付けねじ逃げ機構
２９ 加速電極取り付けねじ
３０ 加速電極取り付けねじ逃げ機構
３１ 水冷ジャケット２４と水冷ジャケット２５の取り
付けねじ
３２ 遮蔽電極と加速電極間のギャップ
３３ イオンビーム引き出し口
３４ 冷却水流路1 Vacuum Container 2 Ion Source Body 3 Inert Gas Introduction Pipe 4 Hot Cathode 5 Anode 6 Ar Plasma 7 Shielding Electrode 8 Accelerating Electrode 9 Magnet 10 Ion Beam 11 Discharge Power Supply 12 Beam Power Supply 13 Acceleration Power Supply 14 Hot Cathode Power Supply 15 Beam Power Switch 16 Neutralizer 17 Neutralizer power supply 18 Emission current 19 Shutter 20 Crystal oscillator 21 Carrier rail 22 Carrier 23 Water cooling jacket 1 24 Water cooling jacket 2 25 Water cooling jacket 3 26 Shield plate 27 Shield electrode mounting screw 28 Shield electrode mounting screw escape mechanism 29 Accelerator electrode Mounting screw 30 Accelerating electrode mounting screw escape mechanism 31 Mounting screw for water cooling jacket 24 and water cooling jacket 25 Gap between shield electrode and accelerating electrode 33 Ion beam outlet 34 Cooling water flow path
フロントページの続き (56)参考文献 特開 平11−149882（ＪＰ，Ａ) 特開 平８−250055（ＪＰ，Ａ) 特開 平９−321563（ＪＰ，Ａ) 特開 平８−148105（ＪＰ，Ａ) 特開 平７−262949（ＪＰ，Ａ) 特開 平７−192670（ＪＰ，Ａ) 特開 昭61−34832（ＪＰ，Ａ) 特開 昭63−66827（ＪＰ，Ａ) 特開 昭61−118937（ＪＰ，Ａ) 特開 昭63−151103（ＪＰ，Ａ) 実開 平４−123061（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01J 27/14 Continuation of front page (56) Reference JP-A-11-149882 (JP, A) JP-A-8-250055 (JP, A) JP-A-9-321563 (JP, A) JP-A-8-148105 (JP , A) JP 7-262949 (JP, A) JP 7-192670 (JP, A) JP 61-34832 (JP, A) JP 63-66827 (JP, A) JP 61-118937 (JP, A) JP-A-63-151103 (JP, A) Fukuidai 4-123061 (JP, U) (58) Fields investigated (Int.Cl. 7 , DB name) H01J 27/14
Claims (10)
源であって、 複数の熱陰極と、 1ないし複数の陽極と、 １ないし複数の細孔を有する遮蔽電極と、 前記遮蔽電極を冷却するための冷却手段と、 前記遮蔽電極の前面に、前記遮蔽電極と一致する形状の
１ないし複数の細孔を有する加速電極と、 前記加速電極のグリッド部以外に設けられ高いメンテナ
ンス性を有する、前記加速電極を冷却するための冷却手
段と、 前記陽極と前記遮蔽電極の間で前記遮蔽電極に近接する
位置に、温度上昇及び前記遮蔽電極の歪を抑制するため
の、イオンビーム通過領域にイオンビーム引出し有効面
積とほぼ同じ大きさの開口を持つシールド板とを含む大
口径イオン源。1. An ion source for generating a large-diameter ion beam, comprising a plurality of hot cathodes, one to a plurality of anodes, a shield electrode having one to a plurality of pores, and cooling the shield electrode. Cooling means, an accelerating electrode having, on the front surface of the shield electrode, one or a plurality of pores having a shape matching the shield electrode, and having high maintainability provided in a region other than the grid portion of the accelerating electrode, A cooling unit for cooling the acceleration electrode, an ion beam passing region for suppressing temperature rise and distortion of the shielding electrode between the anode and the shielding electrode, in a position close to the shielding electrode. A large-diameter ion source including a shield plate having an opening having substantially the same size as the extraction effective area.
源であって、 複数の熱陰極と、 1ないし複数の陽極と、 １ないし複数の細孔を有する遮蔽電極と、 前記遮蔽電極を冷却するための冷却手段と、 前記遮蔽電極の前面に、前記遮蔽電極と一致する形状の
１ないし複数の細孔を有する加速電極と、 前記加速電極のグリッド部以外に設けられ高いメンテナ
ンス性を有する、前記加速電極を冷却するための冷却手
段と、さらに前記遮蔽電極と前記加速電極を各々の冷却
手段に直接固定し、かつ前記各々の冷却手段同士を一体
化して高い冷却効果をもたらすと共に、前記遮蔽電極と
前記加速電極とのギャップを１ｍｍ以下に維持するため
の固定手段と、を含む大口径イオン源。2. An ion source for generating a large-diameter ion beam, comprising a plurality of hot cathodes, one to a plurality of anodes, a shield electrode having one to a plurality of pores, and cooling the shield electrode. Cooling means, an accelerating electrode having, on the front surface of the shield electrode, one or a plurality of pores having a shape matching the shield electrode, and having high maintainability provided in a region other than the grid portion of the accelerating electrode, Cooling means for cooling the accelerating electrode, further directly fixing the shielding electrode and the accelerating electrode to the respective cooling means, and integrating the respective cooling means with each other to provide a high cooling effect, and the shielding electrode And a fixing means for maintaining the gap between the accelerating electrode and 1 mm or less, a large diameter ion source.
前記加速電極の前記各々の冷却手段はねじによって固定
され、前記ねじの、前記それぞれの電極に相対する位置
にねじの逃げ機構が設けられている請求項２に記載の大
口径イオン源。3. In the fixing means, each of the cooling means of the shield electrode and the accelerating electrode is fixed by a screw, and a screw escape mechanism is provided at a position of the screw facing the respective electrodes. The large diameter ion source according to claim 2.
電極に近接する位置に、温度上昇及び前記遮蔽電極の歪
を抑制するための、イオンビーム通過領域に開口を持つ
シールド板を含む請求項２に記載の大口径イオン源。4. A shield plate having an opening in an ion beam passage region for suppressing temperature rise and distortion of the shield electrode is provided between the anode and the shield electrode in a position close to the shield electrode. The large-diameter ion source according to Item 2.
めの冷却手段を更に含む請求項１または２に記載の大口
径イオン源。5. The large diameter ion source according to claim 1, further comprising cooling means for cooling the main body of the large diameter ion source.
取り付けられた冷却構造をとっている請求項１または２
に記載の大口径イオン源。6. The cooling structure according to claim 1, wherein the cooling means has a cooling structure to which a water cooling jacket is directly attached.
Large-diameter ion source described in.
項１または２に記載の大口径イオン源。7. The large diameter ion source according to claim 1, further comprising a magnet near the anode.
らなる請求項１または４に記載の大口径イオン源。8. The large diameter ion source according to claim 1, wherein the shield plate is made of a material having a high thermal conductivity.
上の高密度、イオンビームの均一性±３％以内、イオン
ビーム電流密度の再現性±１％以内、かつ断面の幅が６
０ｍｍ以上である請求項１または２に記載の大口径イオ
ン源。9. The ion beam has a high density of 10 mA / cm 2 or more, the uniformity of the ion beam is within ± 3%, the reproducibility of the ion beam current density is within ± 1%, and the width of the cross section is 6 or less.
The large-diameter ion source according to claim 1, which has a diameter of 0 mm or more.
数配置し、請求項１ないし９に記載の大口径イオン源を
用いて、前記複数の圧電素子上の電極を同時にイオンビ
ームエッチングし、前記複数の圧電素子の周波数を同時
に調整する方法、及びその装置。10. A plurality of piezoelectric elements having electrodes are arranged in a vacuum chamber, and the electrodes on the plurality of piezoelectric elements are simultaneously ion-beam etched by using the large-diameter ion source according to claim 1, A method and apparatus for simultaneously adjusting the frequencies of a plurality of piezoelectric elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000267957A JP3513474B2 (en) | 2000-09-05 | 2000-09-05 | Large diameter ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000267957A JP3513474B2 (en) | 2000-09-05 | 2000-09-05 | Large diameter ion source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002075232A JP2002075232A (en) | 2002-03-15 |
| JP3513474B2 true JP3513474B2 (en) | 2004-03-31 |
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| JP4724866B2 (en) * | 2003-12-19 | 2011-07-13 | 株式会社昭和真空 | Apparatus and method for adjusting frequency of piezoelectric device, and piezoelectric device |
| KR100644048B1 (en) | 2005-09-07 | 2006-11-10 | 동부일렉트로닉스 주식회사 | Electrode head for ion beam generator |
| JP5298421B2 (en) * | 2006-02-15 | 2013-09-25 | 株式会社昭和真空 | Charged particle irradiation apparatus and charged particle control method |
| JP5040723B2 (en) * | 2008-02-26 | 2012-10-03 | 日新イオン機器株式会社 | Ion source |
| JP5720021B2 (en) * | 2011-03-15 | 2015-05-20 | 株式会社昭和真空 | Ion gun |
| JP5903864B2 (en) * | 2011-12-14 | 2016-04-13 | セイコーエプソン株式会社 | Ion milling equipment |
| JP5906505B2 (en) * | 2012-03-22 | 2016-04-20 | 株式会社昭和真空 | Piezoelectric element frequency measuring method, frequency adjusting method, and piezoelectric element manufacturing method |
| CN111050501B (en) * | 2019-12-13 | 2021-05-28 | 南通科创建设工程检测有限公司 | Ocean monitoring auxiliary assembly based on magnetic force changes automatic dehumidification |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6134832A (en) * | 1984-07-26 | 1986-02-19 | Hitachi Ltd | Large aperture ion source |
| JPS61118937A (en) * | 1984-11-14 | 1986-06-06 | Hitachi Ltd | Ion source |
| JPH0746588B2 (en) * | 1986-09-09 | 1995-05-17 | 日本電信電話株式会社 | Microwave ion source |
| JP2602215B2 (en) * | 1986-12-15 | 1997-04-23 | 日本電波工業 株式会社 | Frequency adjustment method of piezoelectric vibrator |
| JPH04123061U (en) * | 1991-04-24 | 1992-11-06 | 石川島播磨重工業株式会社 | Beam extraction electrode structure of charged particle beam generator |
| JPH07192670A (en) * | 1993-12-25 | 1995-07-28 | Nissin Electric Co Ltd | Ion source device |
| JPH07262949A (en) * | 1994-03-17 | 1995-10-13 | Nissin Electric Co Ltd | Ion source apparatus |
| JPH08148105A (en) * | 1994-11-18 | 1996-06-07 | Nissin Electric Co Ltd | Ion source device |
| JP3528305B2 (en) * | 1995-03-08 | 2004-05-17 | 石川島播磨重工業株式会社 | Ion source |
| JPH09321563A (en) * | 1996-05-27 | 1997-12-12 | Matsushita Electric Ind Co Ltd | Frequency adjustment method for crystal vibrator |
| JPH11149882A (en) * | 1997-11-13 | 1999-06-02 | Nissin Electric Co Ltd | Electrode for ion source |
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