JPH09321563A - Frequency adjustment method for crystal vibrator - Google Patents

Abstract

PROBLEM TO BE SOLVED: To adjust the output frequency of the crystal vibrator increasingly in a short time by colliding an ion beam including charged particles only to a prescribed etching area on the surface of electrodes formed on the crystal vibrator so as to etch an etching area. SOLUTION: An opening 11a of a chamber 11 is switched by a gate 12. When a substrate 1 is positioned by a clamper 13 provided in the chamber 11, external electrodes 6, 7 are respectively connected electrically to probes 14, 15 arranged to a lower part of the chamber 11. Furthermore, an ion gun 16 receiving supply of Ar gas from the outside of the chamber 11 is set so that the ion beam from the ion gun 16 bit only an etching area S on the positioned substrate 1 from an oblique upper direction. Through the constitution above, the ion beam with high energy including charged particles is emitted only only the etching area S from the oblique upper direction to etch the etching area.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal resonator frequency adjustment method.

[0002]

2. Description of the Related Art Conventionally, as a method of adjusting the frequency of a crystal unit, a metal is vapor-deposited on a crystal plate to form an excitation electrode, and then a metal is vapor-deposited on the excitation electrode to increase the mass of the electrode to change the frequency. The lowering technique is used.

On the other hand, a method of irradiating a quartz resonator with only neutral particles has been proposed as a method for adjusting the mass of an electrode by decreasing the mass and increasing the frequency (Japanese Patent Laid-Open No. 1967/1992).
08 publication).

[0004]

However, in this method, charged particles having large energy cannot be used, and etching can be performed only in small amounts. As a result, there is a problem that it takes a long time to adjust the frequency. .

Therefore, it is an object of the present invention to provide a frequency adjusting method for a crystal unit, which can adjust the frequency in a direction of increasing the frequency in a short time.

[0006]

According to a method of adjusting a frequency of a crystal resonator of the present invention, an ion beam containing charged particles is made to collide with only a certain etching region of a surface of an electrode formed on the crystal resonator for etching. To do.

[0007]

A method of adjusting a frequency of a crystal resonator according to claim 1, wherein an ion beam containing charged particles is made to collide only with a certain etching region on a surface of an electrode formed on the crystal resonator for etching. Therefore, the charged particles having high energy can be used to perform the etching at a high speed, and the frequency adjustment can be completed in a short time. Moreover, since the ion beam is made to collide only in a certain etching region on the surface of the electrode, the frequency shift due to the charge-up of the crystal unit can be suppressed.

Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view of a crystal unit according to an embodiment of the present invention. Note that the following description will be given by taking a crystal resonator for surface mounting as an example, but the frequency adjusting method of the crystal resonator of the present invention can be applied to other types of crystal resonators.

In FIG. 1, reference numeral 1 is a box-shaped substrate having an open upper end, and a crystal plate 2 is housed in the substrate 1. The upper electrode 3 and the lower electrode 4 are formed on both upper and lower surfaces of the crystal plate 2 by vapor deposition so as to be symmetrically arranged.
The upper electrode 3 is a body 3a that is involved in the frequency of the crystal unit.
And a terminal portion 3b connected to the main body 3a. Then, an etching region S is set in the central portion of the main body 3a.

That is, in this embodiment, the etching region S for colliding the ion beam is set only in the body 3a of the upper electrode 3 on the upper surface of the electrodes 3 and 4, and the etching region of the upper electrode 3 is set. The part outside S and the lower electrode 4
In addition, the crystal plate 2 itself is not allowed to collide with the ion beam. For this reason, the crystal oscillator does not charge up and the frequency measured by the frequency measuring unit does not shift.

Reference numeral 5 is an internal terminal provided on the bottom of the substrate 1, and the internal terminal 5 and the terminal portion 3b of the upper electrode 3 are electrically connected by a wire 6. As shown in FIG. 2, external electrodes 6 and 7 are provided on both ends of the bottom surface of the main body 1, and the internal terminals 5 are electrically connected to the external electrodes 6 by internal wiring 8. There is. Although not shown in the drawing, the lower electrode 4 also has a terminal portion, and this terminal portion and the external electrode 7 are connected by the internal wiring 9.

Then, as shown in FIG. 2, the lid 10 closes the upper end of the substrate 1 after the frequency adjustment described later is completed.

Next, with reference to FIG. 3, a method of adjusting the frequency of the crystal resonator of this embodiment will be described. FIG. 3 is a cross-sectional view of the frequency adjusting device according to the embodiment of the present invention.

In FIG. 3, 11 is a chamber having an opening 11a on the left side of FIG. 3, and the opening 11a is opened and closed by a gate 12.

Reference numeral 13 is a clamper provided in the chamber 11, and when the substrate 1 is positioned by the clamper 13, the external electrodes 6 and 7 are electrically connected to the probes 14 and 15 provided in the lower portion of the chamber 11, respectively. Connected to.

Reference numeral 16 denotes an ion gun which is arranged in the chamber 11 and receives an Ar gas supplied from the outside of the chamber 11 to irradiate a limited region with an ion beam. The ion beam contains not only electrically neutral particles but also charged particles having large energy. Further, in the present embodiment, the ion gun 16 is set so that the ion beam of the ion gun 16 strikes only the etching region S on the positioned substrate 1 obliquely from above as shown by an arrow N1.

Further, from the ion gun 16 to the etching region S
When the ion beam is irradiated onto the
Although the etched substance is scattered obliquely upward, it is applied to the adhesion preventing plate 17 so as not to be scattered. In addition,
As the adhesion-preventing plate 17, a metal plate or the like having a large surface roughness is preferable.

Reference numeral 18 is a vacuum pump for decompressing the inside of the chamber 11 after the gate 12 closes the opening 11a. Reference numeral 19 is a frequency measuring section for receiving the inputs from the probes 14 and 15 and measuring the frequency of the crystal oscillator. Is an ion gun control unit that controls the ion beam of the ion gun 16.

By using the above frequency adjusting device, a high-energy ion beam containing charged particles is irradiated only obliquely from above to the etching region S for etching. As a result, the mass of the upper electrode 3 decreases and the frequency rises, approaching the target frequency. Here, since the ion beam contains charged particles, high-speed etching can be performed,
Frequency adjustment time can be shortened.

Further, as described above, since the frequency shift due to the charge up of the crystal unit is suppressed,
The frequency may be measured concurrently (real time) with the irradiation of the ion beam, or the measurement by the frequency measuring unit 19 and the irradiation of the ion beam may be alternately performed.

[0021]

According to the method of adjusting the frequency of the crystal resonator of the present invention, the ion beam containing charged particles is collided and etched only on a certain etching region of the surface of the electrode formed on the crystal resonator. Etching can be performed, and the time required for frequency adjustment can be shortened.

[Brief description of drawings]

FIG. 1 is a perspective view of a crystal unit according to an embodiment of the present invention.

FIG. 2 is a sectional view of a crystal unit according to an embodiment of the present invention.

FIG. 3 is a sectional view of a frequency adjusting device according to an embodiment of the present invention.

[Explanation of symbols]

 2 Crystal plate 3 Upper electrode S Etching area

Claims (4)

[Claims] 1. A method for adjusting a frequency of a crystal resonator, wherein an ion beam is applied to a crystal resonator whose frequency is to be adjusted to adjust the frequency, and a constant etching region is formed on a surface of an electrode formed on the crystal resonator. A method for adjusting the frequency of a crystal resonator, which comprises etching by colliding an ion beam containing charged particles only. 2. The method for adjusting the frequency of a crystal resonator according to claim 1, wherein the etching region is set only on an electrode on one surface of the electrodes of the crystal resonator. 3. The method for adjusting the frequency of a crystal resonator according to claim 1, wherein the ion beam is irradiated obliquely from above the etching region, and the etched substance is adsorbed by a deposition preventive plate. 4. The method for adjusting the frequency of a crystal resonator according to claim 1, wherein the frequency of the crystal resonator is measured in parallel with the irradiation of the ion beam.