TWI855482B - Plasma treatment equipment - Google Patents

Plasma treatment equipment Download PDF

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Publication number
TWI855482B
TWI855482B TW111150394A TW111150394A TWI855482B TW I855482 B TWI855482 B TW I855482B TW 111150394 A TW111150394 A TW 111150394A TW 111150394 A TW111150394 A TW 111150394A TW I855482 B TWI855482 B TW I855482B
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antenna
processing device
plasma processing
cover
plasma
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TW111150394A
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Chinese (zh)
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TW202405865A (en
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酒井敏彦
東大介
藤原将喜
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日商日新電機股份有限公司
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Abstract

電漿處理裝置(1)包括：殼體(2)，設置有第一開口部(2b)；真空罩(4)，以能夠拆裝的方式安裝於第一開口部(2b)，且閉塞該第一開口部(2b)；天線罩(5)，支撐於第一開口部(2b)的內部，且具有介電性；以及天線(8)，配設於至少由真空罩(4)及天線罩(5)包圍而形成的天線收容空間(AK)中，用於產生感應耦合性的電漿。天線罩(5)形成有在真空罩(4)側開口並且構成天線收容空間(AK)的一部分的罩開口部(5c)，且所述天線罩(5)能夠自第一開口部(2b)卸下。 The plasma processing device (1) comprises: a housing (2) provided with a first opening (2b); a vacuum cover (4) installed on the first opening (2b) in a detachable manner and closing the first opening (2b); an antenna cover (5) supported inside the first opening (2b) and having dielectric properties; and an antenna (8) disposed in an antenna accommodation space (AK) formed by at least the vacuum cover (4) and the antenna cover (5) and used to generate inductively coupled plasma. The antenna cover (5) is formed with a cover opening (5c) which is open on the side of the vacuum cover (4) and constitutes a part of the antenna accommodation space (AK), and the antenna cover (5) can be removed from the first opening (2b).

Description

電漿處理裝置 Plasma processing equipment

本揭示是有關於一種電漿處理裝置。 This disclosure relates to a plasma processing device.

已知有一種電漿處理裝置，其使用配置於真空容器內的天線在該真空容器內產生感應耦合性的電漿。電漿處理裝置根據其類別，對被處理基板實施使用所產生的電漿的規定的電漿處理。 A plasma processing device is known that uses an antenna disposed in a vacuum container to generate inductively coupled plasma in the vacuum container. Depending on its type, the plasma processing device performs a prescribed plasma processing on a substrate to be processed using the generated plasma.

例如，專利文獻1中記載的電漿處理裝置具有：天線配置部，在設置於真空容器的上壁的空腔的內部配置有高頻天線；以及隔板，以覆蓋上壁的整個內表面側的方式設置。 For example, the plasma processing device described in Patent Document 1 has: an antenna configuration unit in which a high-frequency antenna is configured inside a cavity provided on the upper wall of a vacuum container; and a partition provided in a manner covering the entire inner surface side of the upper wall.

[現有技術文獻] [Prior art literature] [專利文獻] [Patent Literature]

專利文獻1：國際公開第2012/033191號 Patent document 1: International Publication No. 2012/033191

然而，在專利文獻1所記載的先前的電漿處理裝置中，隔板固定於真空容器。因此，在進行該電漿處理裝置的維護作業的情況下，例如有時要求將對隔板進行固定的螺釘自真空容器的內部側拆卸，並自真空容器拆卸隔板。在該情況下，需要進行接近電漿處理裝置的解體的作業。因此，在先前的電漿處理裝置中， 存在其維護作業需要工夫及時間的問題點。 However, in the previous plasma processing device described in Patent Document 1, the partition is fixed to the vacuum container. Therefore, when performing maintenance work on the plasma processing device, for example, it is sometimes required to remove the screws fixing the partition from the inner side of the vacuum container and remove the partition from the vacuum container. In this case, it is necessary to perform a disassembly operation close to the plasma processing device. Therefore, in the previous plasma processing device, there is a problem that its maintenance work requires effort and time.

本揭示是鑒於所述問題點而成者，其目的在於提供一種即便在設置有內側罩的情況下亦可提高維護性的電漿處理裝置。 This disclosure is made in view of the above-mentioned problems, and its purpose is to provide a plasma processing device that can improve the maintainability even when an inner cover is provided.

為了解決所述課題，本揭示的一方面的電漿處理裝置為包括處理室的電漿處理裝置，所述電漿處理裝置包括：殼體，設置有將所述處理室與外部環境連通的第一開口部；外側罩，以能夠拆裝的方式安裝於所述第一開口部，且閉塞所述第一開口部；內側罩，支撐於所述第一開口部的內部，且具有介電性；以及天線，配設於至少由所述外側罩及所述內側罩包圍而形成的包圍空間中，用於產生感應耦合性的電漿，所述內側罩形成有在所述外側罩側開口並且構成所述包圍空間的一部分的第二開口部，所述內側罩能夠自所述第一開口部拆卸。 In order to solve the above problem, the plasma processing device of one aspect of the present disclosure is a plasma processing device including a processing chamber, the plasma processing device including: a housing, provided with a first opening portion connecting the processing chamber with an external environment; an outer cover, detachably mounted on the first opening portion and closing the first opening portion; an inner cover, supported inside the first opening portion and having dielectric properties; and an antenna, arranged in an enclosed space formed by at least the outer cover and the inner cover, for generating inductively coupled plasma, the inner cover having a second opening portion opening on the side of the outer cover and constituting a part of the enclosed space, the inner cover being detachable from the first opening portion.

藉由本揭示的一形態，可提供一種即便在設置有內側罩的情況下亦可提高維護性的電漿處理裝置。 According to one aspect of the present disclosure, a plasma processing device can be provided that can improve maintainability even when an inner cover is provided.

1:電漿處理裝置 1: Plasma treatment device

2:殼體 2: Shell

2a:殼體本體 2a: Shell body

2b:第一開口部 2b: First opening

2c、2d、4b、4c:連結孔 2c, 2d, 4b, 4c: connection holes

3、33:凸緣 3, 33: flange

3a:第一邊部 3a: First side

3b:第二邊部 3b: Second side

3c:第三邊部 3c: The third side

3d:第四邊部 3d: Fourth side

3e:第五邊部 3e: Fifth side

4:真空罩(外側罩) 4: Vacuum cover (outer cover)

4a:罩本體 4a: Cover body

5:天線罩(內側罩) 5: Antenna cover (inner cover)

5a:天線收容部 5a: Antenna storage unit

5b:罩支撐部 5b: Hood support part

5c:罩開口部 5c: Hood opening

6:載台 6: Carrier

8、81、82、83、84:天線 8, 81, 82, 83, 84: Antenna

9、9A、9B:電源 9, 9A, 9B: Power supply

10、10A、10B、11、11A、11B、11C、11D、11E、11F、11G、11H:阻抗調整部 10, 10A, 10B, 11, 11A, 11B, 11C, 11D, 11E, 11F, 11G, 11H: Impedance adjustment unit

12:冷卻器 12: Cooler

12a:冷卻器本體 12a: Cooler body

12b、H01、H02、H1A、H1B、H2、H3、H4、H5、H6、H7、H8、H10、H11、H11A、H12、H13:配管 12b, H01, H02, H1A, H1B, H2, H3, H4, H5, H6, H7, H8, H10, H11, H11A, H12, H13: piping

13A、13B:天線絕緣部 13A, 13B: Antenna insulation part

14:抑制介電體 14: Suppressing dielectrics

15:控制部 15: Control Department

16:支撐台 16: Support platform

16A、16B:真空罩保護用介電體 16A, 16B: Dielectric for vacuum cover protection

17A:第一真空泵 17A: First vacuum pump

17B:第二真空泵(真空泵) 17B: Second vacuum pump (vacuum pump)

18:間隔件構件 18: Spacer components

33a、33b、33c、33d、33e:凸緣構件 33a, 33b, 33c, 33d, 33e: flange components

AK:天線收容空間(包圍空間) AK: Antenna containment space (enclosed space)

H1:被處理基板(被處理物) H1: processed substrate (processed object)

HA:電漿生成區域(處理室) HA: Plasma generation area (processing room)

P1:第一壓力計 P1: First pressure gauge

P2:第二壓力計(壓力計) P2: Second pressure gauge (pressure gauge)

PO:真空泵 PO: Vacuum pump

R1、R2、S1、S2:箭頭 R1, R2, S1, S2: Arrows

S1~S13、S21~S27、S31~S38:步驟 S1~S13, S21~S27, S31~S38: Steps

V0、V1、V2、V3、V4、V5、V11、V12、V13:閥 V0, V1, V2, V3, V4, V5, V11, V12, V13: valve

圖1是對本揭示的實施方式1的電漿處理裝置的結構進行說明的圖。 FIG1 is a diagram illustrating the structure of the plasma processing device of the first embodiment of the present disclosure.

圖2是圖1的II-II線剖面圖。 Figure 2 is a cross-sectional view taken along line II-II of Figure 1.

圖3是對所述電漿處理裝置中的試驗結果的一例進行說明的 圖。 FIG3 is a diagram illustrating an example of test results in the plasma processing device.

圖4是對本揭示的實施方式2的電漿處理裝置的結構進行說明的圖。 FIG4 is a diagram illustrating the structure of the plasma processing device of the second embodiment of the present disclosure.

圖5是對本揭示的實施方式3的電漿處理裝置的結構進行說明的圖。 FIG5 is a diagram illustrating the structure of the plasma processing device of the third embodiment of the present disclosure.

圖6是圖5的V-V線剖面圖。 Figure 6 is a cross-sectional view taken along line V-V of Figure 5.

圖7是對本揭示的實施方式4的電漿處理裝置的結構進行說明的圖。 FIG. 7 is a diagram illustrating the structure of the plasma processing device of the fourth embodiment of the present disclosure.

圖8是圖7的VII-VII線剖面圖。 Figure 8 is a cross-sectional view taken along line VII-VII of Figure 7.

圖9是對本揭示的實施方式5的電漿處理裝置的結構進行說明的圖。 FIG9 is a diagram illustrating the structure of the plasma processing device of embodiment 5 of the present disclosure.

圖10是表示圖9所示的電漿處理裝置的動作例的流程圖。 FIG10 is a flow chart showing an example of the operation of the plasma processing device shown in FIG9.

圖11是表示圖9所示的電漿處理裝置的另一動作例的流程圖。 FIG11 is a flow chart showing another operation example of the plasma processing device shown in FIG9.

圖12是表示圖9所示的電漿處理裝置的另一動作例的流程圖。 FIG12 is a flow chart showing another operation example of the plasma processing device shown in FIG9.

圖13是對變形例1的電漿處理裝置中的天線的具體的配線進行說明的圖。 FIG. 13 is a diagram illustrating the specific wiring of the antenna in the plasma processing device of Modification Example 1.

圖14是對變形例2的電漿處理裝置中的天線的具體的配線進行說明的圖。 FIG. 14 is a diagram illustrating the specific wiring of the antenna in the plasma processing device of Modification Example 2.

圖15是對變形例3的電漿處理裝置中的天線的具體的配線進行說明的圖。 FIG. 15 is a diagram illustrating the specific wiring of the antenna in the plasma processing device of Modification Example 3.

圖16是對本揭示的實施方式6的電漿處理裝置的結構進行說明的圖。 FIG. 16 is a diagram illustrating the structure of the plasma processing device of Embodiment 6 of the present disclosure.

圖17是圖16的XVII-XVII線剖面圖。 Figure 17 is a cross-sectional view taken along line XVII-XVII of Figure 16.

圖18是對本揭示的實施方式7的電漿處理裝置的結構進行說明的圖。 FIG. 18 is a diagram illustrating the structure of the plasma processing device of embodiment 7 of the present disclosure.

圖19是圖18的IXX-IXX線剖面圖。 Figure 19 is a cross-sectional view taken along line IXX-IXX of Figure 18.

〔實施方式1〕 [Implementation Method 1]

以下，使用圖1及圖2對本揭示的實施方式1進行詳細說明。圖1是對本揭示的實施方式1的電漿處理裝置1的結構進行說明的圖。圖2是圖1的II-II線剖面圖。 Below, the embodiment 1 of the present disclosure is described in detail using Figures 1 and 2. Figure 1 is a diagram illustrating the structure of the plasma processing device 1 of the embodiment 1 of the present disclosure. Figure 2 is a cross-sectional view taken along the II-II line of Figure 1.

再者，在以下的說明中，例示出電漿處理裝置1進行說明，所述電漿處理裝置1進行成膜處理來作為規定的電漿處理，所述成膜處理是藉由使用了感應耦合性的電漿的電漿CVD(Chemical Vapor Deposition：化學氣相沈積)法在作為被處理物的被處理基板H1的表面形成規定的皮膜。 Furthermore, in the following description, a plasma processing device 1 is exemplified for description, and the plasma processing device 1 performs a film forming process as a predetermined plasma process, and the film forming process forms a predetermined film on the surface of a substrate H1 as a processed object by a plasma CVD (Chemical Vapor Deposition) method using an inductively coupled plasma.

然而，本揭示可應用於電漿處理裝置1，所述電漿處理裝置1例如進行藉由濺鍍法在被處理基板H1形成規定的皮膜的成膜處理來作為規定的電漿處理。另外，本揭示可應用於電漿處理裝置1，所述電漿處理裝置1進行使用電漿對被處理基板H1的表面進行規定的加工的表面加工處理，例如蝕刻處理或灰化處理來作為規定的電漿處理。再者，在進行濺鍍法的電漿處理裝置1中， 靶材例如設置於後述的電漿生成區域HA的內部。 However, the present disclosure can be applied to a plasma processing device 1, which performs a film forming process of forming a predetermined film on a substrate H1 to be processed by a sputtering method as a predetermined plasma process. In addition, the present disclosure can be applied to a plasma processing device 1, which performs a surface processing process of performing a predetermined process on the surface of the substrate H1 to be processed by using plasma, such as an etching process or an ashing process as a predetermined plasma process. Furthermore, in a plasma processing device 1 that performs a sputtering method, the target material is, for example, disposed inside a plasma generating area HA described later.

<電漿處理裝置1的結構> <Structure of plasma processing device 1>

如圖1所示，本實施方式1的電漿處理裝置1包括殼體2、凸緣3、真空罩4、天線罩5及載台6。另外，電漿處理裝置1包括天線8及控制部15。另外，在電漿處理裝置1中，如圖2所示，設置有多個天線8，例如四個天線8，真空罩4及天線罩5針對每個天線8而設置。進而，在電漿處理裝置1中，被處理基板H1藉由搬送機構在載台6與公知的負載鎖固室之間被搬送(未圖示)。 As shown in FIG1 , the plasma processing device 1 of the present embodiment 1 includes a housing 2, a flange 3, a vacuum cover 4, an antenna cover 5, and a carrier 6. In addition, the plasma processing device 1 includes an antenna 8 and a control unit 15. In addition, in the plasma processing device 1, as shown in FIG2 , a plurality of antennas 8, for example, four antennas 8, are provided, and the vacuum cover 4 and the antenna cover 5 are provided for each antenna 8. Furthermore, in the plasma processing device 1, the substrate H1 to be processed is transported between the carrier 6 and a known load lock chamber by a transport mechanism (not shown).

被處理基板H1例如可為液晶面板顯示器、有機電致發光(Electro Luminescence，EL)面板顯示器等中使用的玻璃基板、合成樹脂基板。另外，被處理基板H1可為用於各種用途的半導體基板。電漿處理裝置1藉由所述規定的電漿處理在被處理基板H1上形成障壁(防濕)膜等規定的皮膜。 The substrate H1 to be processed may be, for example, a glass substrate or a synthetic resin substrate used in a liquid crystal panel display or an organic electroluminescence (EL) panel display. In addition, the substrate H1 to be processed may be a semiconductor substrate used for various purposes. The plasma processing device 1 forms a predetermined film such as a barrier (moisture-proof) film on the substrate H1 to be processed by the predetermined plasma processing.

<殼體2> <Shell 2>

殼體2包括殼體本體2a，所述殼體本體2a用於構成對被處理基板H1進行所述規定的電漿處理的處理室，在該殼體本體2a的上部設置有將所述處理室與外部環境連通的第一開口部2b。在本實施方式的電漿處理裝置1中，殼體2具有上側開口的箱體狀的殼體本體2a，在殼體2(殼體本體2a)的上表面側氣密地安裝有具有多個開口部的凸緣3。在電漿處理裝置1中，於在殼體本體2a安裝有凸緣3的狀態下，凸緣3的開口部包含於將所述處理室的內部與外部連通的第一開口部2b中。換言之，於在殼體2的上 端面安裝有凸緣3及真空罩4的情況下，以能夠拆裝的方式安裝於殼體2的真空罩4與凸緣3一起閉塞第一開口部2b。 The housing 2 includes a housing body 2a, and the housing body 2a is used to constitute a processing chamber for performing the prescribed plasma processing on the substrate H1 to be processed, and a first opening 2b for connecting the processing chamber with the external environment is provided at the upper portion of the housing body 2a. In the plasma processing device 1 of the present embodiment, the housing 2 has a box-shaped housing body 2a with an opening on the upper side, and a flange 3 having a plurality of openings is airtightly mounted on the upper surface side of the housing 2 (housing body 2a). In the plasma processing device 1, when the flange 3 is mounted on the housing body 2a, the opening of the flange 3 is included in the first opening 2b for connecting the inside of the processing chamber with the outside. In other words, when the flange 3 and the vacuum cover 4 are installed on the upper end surface of the housing 2, the vacuum cover 4 installed on the housing 2 in a detachable manner closes the first opening 2b together with the flange 3.

<凸緣3> <Flange 3>

如圖2所示，凸緣3例如包括矩形形狀的框體，所述框體具有相互相向的兩個第一邊部3a、及與第一邊部3a正交並且相互相向的兩個第二邊部3b(圖1)。另外，凸緣3例如包括在所述框體的內側自其中一個第二邊部3b遍及另一個第二邊部3b而設置的第三邊部3c、第四邊部3d、及第五邊部3e。即，該些第三邊部3c、第四邊部3d、及第五邊部3e的各兩端部與第二邊部3b連續地形成。第三邊部3c、第四邊部3d、及第五邊部3e亦可在兩個第一邊部3a之間形成為與第一邊部3a平行。 As shown in FIG. 2 , the flange 3 includes, for example, a rectangular frame having two first sides 3a facing each other, and two second sides 3b orthogonal to the first sides 3a and facing each other ( FIG. 1 ). In addition, the flange 3 includes, for example, a third side 3c, a fourth side 3d, and a fifth side 3e provided on the inner side of the frame from one of the second sides 3b to the other second side 3b. That is, both ends of the third side 3c, the fourth side 3d, and the fifth side 3e are formed continuously with the second side 3b. The third side 3c, the fourth side 3d, and the fifth side 3e may also be formed between the two first sides 3a to be parallel to the first side 3a.

另外，第一邊部3a、第二邊部3b、第三邊部3c、第四邊部3d、及第五邊部3e可分別具有向第一開口部2b側突出的突出部(詳情將後述)。再者，在以下的說明中，對於第一邊部3a、第二邊部3b、第三邊部3c、第四邊部3d、及第五邊部3e，統稱為邊部3h。 In addition, the first side 3a, the second side 3b, the third side 3c, the fourth side 3d, and the fifth side 3e may each have a protrusion protruding toward the first opening 2b (details will be described later). Furthermore, in the following description, the first side 3a, the second side 3b, the third side 3c, the fourth side 3d, and the fifth side 3e are collectively referred to as the side 3h.

<真空罩4> <Vacuum hood 4>

另外，在電漿處理裝置1中，閉塞第一開口部2b的真空罩4構成為能夠拆裝地安裝於該第一開口部2b。即，真空罩4以閉塞第一開口部2b的方式介隔著凸緣3而氣密地安裝於殼體本體2a，並且可逆地安裝成能夠自凸緣3及殼體本體2a拆卸。此處，凸緣3亦可具有突出部，所述突出部形成為在自外部環境朝向所述處理 室的方向上階段性地減小第一開口部2b的開口面積。例如，第一邊部3a、第三邊部3c、第四邊部3d、及第五邊部3e各自亦可在第一開口部2b的內部具有以對真空罩4的周緣部進行卡止的方式突出的第一支撐部。第一支撐部亦可為所述突出部的一部分。另外，真空罩4為外側罩的一例，抵接於第二邊部3b的上表面，並且抵接於第一邊部3a、第三邊部3c、第四邊部3d、及第五邊部3e中的第一支撐部的上表面而受到支撐。真空罩4例如為金屬製。 In addition, in the plasma processing device 1, the vacuum cover 4 closing the first opening 2b is configured to be detachably mounted on the first opening 2b. That is, the vacuum cover 4 is airtightly mounted on the housing body 2a via the flange 3 in a manner of closing the first opening 2b, and is reversibly mounted to be detachable from the flange 3 and the housing body 2a. Here, the flange 3 may also have a protrusion formed to gradually reduce the opening area of the first opening 2b in a direction from the external environment toward the processing chamber. For example, the first side 3a, the third side 3c, the fourth side 3d, and the fifth side 3e may each have a first support portion protruding in the interior of the first opening 2b in a manner of locking the peripheral portion of the vacuum cover 4. The first supporting portion may also be a part of the protruding portion. In addition, the vacuum cover 4 is an example of an outer cover, which abuts against the upper surface of the second side 3b and abuts against the upper surface of the first supporting portion of the first side 3a, the third side 3c, the fourth side 3d, and the fifth side 3e to be supported. The vacuum cover 4 is made of metal, for example.

<天線罩5> <Antenna cover 5>

另外，在電漿處理裝置1中，天線罩5以能夠相對於凸緣3拆卸的方式支撐於第一開口部2b的內部。具體而言，如圖1及圖2所示，天線罩5例如包括呈剖面U字狀地構成的天線收容部5a。另外，天線罩5包括罩支撐部5b及罩開口部5c。罩支撐部5b為自剖面U字狀的天線收容部5a的兩個端部連續地形成，並且以自天線收容部5a的端部向外伸出的方式形成的凸邊部。即，罩支撐部5b具有向外的凸緣形狀。再者，天線罩5支撐於第一開口部2b的內部亦包含如下情況：例如如圖2所示，天線罩5的天線收容部5a的一部分以較第一開口部2b中包含的、凸緣3的開口部更靠下側(殼體2的內部側)部突出的狀態受到支撐。 In addition, in the plasma processing device 1, the antenna cover 5 is supported inside the first opening portion 2b in a manner that it can be detached relative to the flange 3. Specifically, as shown in Figures 1 and 2, the antenna cover 5 includes, for example, an antenna housing portion 5a that is configured in a U-shaped cross section. In addition, the antenna cover 5 includes a cover support portion 5b and a cover opening portion 5c. The cover support portion 5b is a flange portion that is continuously formed from the two ends of the antenna housing portion 5a that is in a U-shaped cross section and is formed in a manner that extends outward from the ends of the antenna housing portion 5a. That is, the cover support portion 5b has an outward flange shape. Furthermore, the antenna cover 5 is supported inside the first opening 2b, which also includes the following situation: for example, as shown in FIG. 2, a part of the antenna housing portion 5a of the antenna cover 5 is supported in a state of protruding further below the opening portion of the flange 3 included in the first opening 2b (inside the housing 2).

此處，例如，凸緣3的邊部3h可在第一開口部2b的內部具有以對天線罩5的周緣部進行卡止的方式突出的第二支撐部。第二支撐部是所述突出部的一部分，較所述第一支撐部更向第一開口部2b的內部側突出(突出長度大)。在天線罩5支撐於 第一開口部2b的內部的狀態下，罩支撐部5b由凸緣3的邊部3h(的所述第二支撐部)予以支撐。另外，天線罩5具有由天線收容部5a包圍而形成的罩開口部5c。 Here, for example, the edge 3h of the flange 3 may have a second support portion protruding inside the first opening 2b in a manner that locks the peripheral portion of the antenna cover 5. The second support portion is a part of the protruding portion, and protrudes further toward the inner side of the first opening 2b than the first support portion (with a longer protruding length). When the antenna cover 5 is supported inside the first opening 2b, the cover support portion 5b is supported by the edge 3h of the flange 3 (the second support portion). In addition, the antenna cover 5 has a cover opening 5c formed by surrounding the antenna receiving portion 5a.

另外，天線罩5例如使用氧化鋁等介電材料而構成，且構成具有介電性的內側罩。另外，在天線罩5中，天線收容部5a以與天線8的形狀對應的方式形成。天線收容部5a構成為在安裝有天線8的狀態下覆蓋天線8的外周面的一部分般的形狀。另外，在天線罩5中，罩支撐部5b以能夠拆卸的方式支撐於凸緣3的邊部3h。進而，在天線罩5中，罩開口部5c以在真空罩4側開口的方式設置。該罩開口部5c為構成後述的天線收容空間AK的一部分的第二開口部的一例。 In addition, the antenna cover 5 is made of a dielectric material such as alumina, and is a dielectric inner cover. In addition, in the antenna cover 5, the antenna housing portion 5a is formed in a manner corresponding to the shape of the antenna 8. The antenna housing portion 5a is formed in a shape that covers a portion of the outer peripheral surface of the antenna 8 when the antenna 8 is installed. In addition, in the antenna cover 5, the cover support portion 5b is supported on the edge 3h of the flange 3 in a detachable manner. Furthermore, in the antenna cover 5, the cover opening portion 5c is provided in a manner that opens on the side of the vacuum cover 4. The cover opening portion 5c is an example of a second opening portion that constitutes a portion of the antenna housing space AK described later.

另外，在殼體2中形成有至少由真空罩4及天線罩5包圍的天線收容空間AK。在本實施方式的電漿處理裝置1中，天線收容空間AK亦由凸緣3的內壁面包圍。該天線收容空間AK為包圍空間的一例，收容有用於產生感應耦合性的電漿的天線8。但是，在該天線收容空間AK中，該空間的大小被設定為無法維持由天線8產生的電漿的大小，因此作為電漿非生成區域發揮功能。 In addition, an antenna storage space AK surrounded by at least a vacuum cover 4 and an antenna cover 5 is formed in the housing 2. In the plasma processing device 1 of the present embodiment, the antenna storage space AK is also surrounded by the inner wall of the flange 3. The antenna storage space AK is an example of an enclosed space, and contains an antenna 8 for generating inductively coupled plasma. However, in the antenna storage space AK, the size of the space is set to be unable to maintain the size of the plasma generated by the antenna 8, and thus functions as a plasma non-generating area.

另外，在本實施方式1的電漿處理裝置1中，如圖2所示，天線罩5藉由設置於殼體本體2a的上端面的凸緣3支撐於殼體2的內部側。藉此，在本實施方式1中，與在天線罩的天線支撐部與殼體的上側表面相接的狀態下將該天線罩安裝於殼體的情況相比，可緊湊地構成電漿處理裝置。換言之，在本實施方式1 的電漿處理裝置1中，可在天線罩5的上部部分(罩支撐部5b)不自殼體2的上側表面突出的情況下將天線罩5以能夠拆裝的方式安裝於殼體2。藉此，在本實施方式1的電漿處理裝置1中，可抑制殼體2大型化。 In addition, in the plasma processing device 1 of the present embodiment 1, as shown in FIG. 2, the antenna cover 5 is supported on the inner side of the housing 2 by the flange 3 provided on the upper end surface of the housing body 2a. In this way, in the present embodiment 1, the plasma processing device can be constructed compactly compared with the case where the antenna cover is mounted on the housing in a state where the antenna support portion of the antenna cover is in contact with the upper surface of the housing. In other words, in the plasma processing device 1 of the present embodiment 1, the antenna cover 5 can be mounted on the housing 2 in a detachable manner without the upper portion of the antenna cover 5 (cover support portion 5b) protruding from the upper surface of the housing 2. Thus, in the plasma processing device 1 of the present embodiment 1, the enlargement of the housing 2 can be suppressed.

<天線8> <Antenna 8>

天線8例如呈圓筒狀地構成，並且是使用銅等金屬材料而構成。另外，天線8的其中一端部及另一端部以分別經由天線絕緣部13A及天線絕緣部13B而與真空罩4電性絕緣的狀態設置，並被氣密地拉出至殼體2的外部。 The antenna 8 is, for example, cylindrical and made of a metal material such as copper. In addition, one end and the other end of the antenna 8 are electrically insulated from the vacuum cover 4 via the antenna insulating portion 13A and the antenna insulating portion 13B, respectively, and are pulled out to the outside of the housing 2 in an airtight manner.

另外，在天線8設置有冷卻器12，藉由利用該冷卻器12而循環的冷卻介質，例如冷卻水將天線8冷卻至規定溫度。具體而言，冷卻器12包括：冷卻器本體12a，包含未圖示的泵等驅動部，用於使冷卻水循環；以及配管12b，與冷卻器本體12a氣密地連結。另外，配管12b亦配置於天線8的內部空間內，構成為將天線8的該內部空間用作冷卻水的循環路徑。即，在天線8中，如圖1中箭頭R1及箭頭R2所示，藉由使冷卻水流經天線8的內部空間而進行該天線8的冷卻。 In addition, a cooler 12 is provided in the antenna 8, and the antenna 8 is cooled to a predetermined temperature by a cooling medium, such as cooling water, which circulates through the cooler 12. Specifically, the cooler 12 includes: a cooler body 12a, including a driving part such as a pump (not shown) for circulating cooling water; and a pipe 12b, which is airtightly connected to the cooler body 12a. In addition, the pipe 12b is also arranged in the internal space of the antenna 8, and is configured to use the internal space of the antenna 8 as a circulation path for cooling water. That is, in the antenna 8, as shown by arrows R1 and R2 in FIG. 1, the cooling of the antenna 8 is performed by allowing cooling water to flow through the internal space of the antenna 8.

另外，在天線8的其中一端部及另一端部，分別電性連接有阻抗調整部10及阻抗調整部11。阻抗調整部10包括未圖示的匹配電路，天線8的其中一端部經由匹配電路而連接於電源9。另外，阻抗調整部11包括可變電容器，天線8的另一端部經由可變電容器而電性接地。 In addition, an impedance adjuster 10 and an impedance adjuster 11 are electrically connected to one end and the other end of the antenna 8, respectively. The impedance adjuster 10 includes a matching circuit (not shown), and one end of the antenna 8 is connected to the power source 9 via the matching circuit. In addition, the impedance adjuster 11 includes a variable capacitor, and the other end of the antenna 8 is electrically grounded via the variable capacitor.

另外，如圖1所示，天線8構成為，向殼體2的外部拉出的拉出部分以外的、用於產生電漿的主要部分呈直線狀地形成。如此，天線8的用於產生電漿的主要部分呈直線狀地形成，因此，與用於產生電漿的主要部分例如包含螺旋狀或U字狀等彎曲形狀的情況相比，可容易且成本低廉地製造天線。另外，在本實施方式1中，藉由對天線8的長邊方向上的傾斜度進行調整，能夠容易地對由該天線8產生的電漿的產生分佈進行調整。 In addition, as shown in FIG. 1 , the antenna 8 is configured such that the main portion for generating plasma, other than the portion pulled out to the outside of the housing 2, is formed in a straight line. In this way, the main portion for generating plasma of the antenna 8 is formed in a straight line, so the antenna can be manufactured easily and at a low cost compared to the case where the main portion for generating plasma includes a curved shape such as a spiral or U shape. In addition, in the present embodiment 1, by adjusting the inclination of the antenna 8 in the long side direction, the generation distribution of the plasma generated by the antenna 8 can be easily adjusted.

另外，如圖2所示，天線罩5包括剖面U字狀的天線收容部5a，所述天線收容部5a與天線8的直線狀的主要部分對應地形成且收容該主要部分。藉此，在本實施方式1中，即便在設置多個天線8的情況下，亦可容易地實現多個各天線8的設置空間、進而實現殼體2及電漿處理裝置1的小型化。 In addition, as shown in FIG. 2 , the antenna cover 5 includes an antenna housing portion 5a having a U-shaped cross section, and the antenna housing portion 5a is formed corresponding to and houses the main portion of the straight line of the antenna 8. Thus, in the present embodiment 1, even when multiple antennas 8 are installed, it is easy to realize the installation space of multiple antennas 8, thereby realizing the miniaturization of the housing 2 and the plasma processing device 1.

電源9例如將13.56MHz的高頻電力經由阻抗調整部10而供給至天線8的其中一端部。在電漿處理裝置1中，控制部15以如下方式進行控制，即藉由對阻抗調整部11的所述可變電容器的電容進行變更而有效率地對天線8供給高頻電力。 The power source 9 supplies high-frequency power of, for example, 13.56 MHz to one end of the antenna 8 via the impedance adjustment unit 10. In the plasma processing device 1, the control unit 15 controls in the following manner, that is, by changing the capacitance of the variable capacitor of the impedance adjustment unit 11, the high-frequency power is efficiently supplied to the antenna 8.

另外，在本實施方式1中，電源9、阻抗調整部10、及阻抗調整部11針對每個天線8而設置，控制部15藉由進行針對每個天線8的電源9的控制而可執行各天線8中產生的電漿的生成控制。藉此，在本實施方式1中，控制部15可使天線8更適當地運作，且能夠可靠地抑制天線收容空間AK中的電漿的產生。其結果，在本實施方式1中，可更可靠地抑制天線8的損傷等的 產生。 In addition, in the first embodiment, the power source 9, the impedance adjustment unit 10, and the impedance adjustment unit 11 are provided for each antenna 8, and the control unit 15 can control the generation of plasma generated in each antenna 8 by controlling the power source 9 for each antenna 8. Thus, in the first embodiment, the control unit 15 can make the antenna 8 operate more appropriately and can reliably suppress the generation of plasma in the antenna storage space AK. As a result, in the first embodiment, the generation of damage to the antenna 8 can be more reliably suppressed.

另外，在殼體2中，藉由在第一開口部2b的內部安裝天線罩5，劃定該殼體2的內部空間並在殼體本體2a的內部形成電漿生成區域HA。在該電漿生成區域HA的內部配置有載台6及支撐於該載台6的被處理基板H1，電漿生成區域HA實質上構成所述處理室。換言之，在殼體2中，藉由天線罩5將電漿生成區域HA與所述電漿非生成區域相互隔開。 In addition, in the housing 2, by installing an antenna cover 5 inside the first opening 2b, the internal space of the housing 2 is demarcated and a plasma generating area HA is formed inside the housing body 2a. A carrier 6 and a substrate H1 to be processed supported on the carrier 6 are arranged inside the plasma generating area HA, and the plasma generating area HA substantially constitutes the processing chamber. In other words, in the housing 2, the plasma generating area HA is separated from the plasma non-generating area by the antenna cover 5.

進而，在殼體2中，藉由凸緣3及真空罩4分別氣密地安裝於殼體本體2a及凸緣3，構成包含所述處理室的真空容器。即，如圖1所示，在殼體2中，真空泵PO與殼體本體2a連結，控制部15進行真空泵PO的控制，藉此電漿生成區域HA的內部至少在電漿處理時成為規定的真空度。 Furthermore, in the housing 2, the flange 3 and the vacuum cover 4 are respectively installed airtightly on the housing body 2a and the flange 3, thereby forming a vacuum container including the processing chamber. That is, as shown in FIG1, in the housing 2, the vacuum pump PO is connected to the housing body 2a, and the control unit 15 controls the vacuum pump PO, thereby the inside of the plasma generation area HA becomes a predetermined vacuum degree at least during the plasma processing.

具體而言，在殼體2中，藉由使用真空泵PO進行排氣，電漿生成區域HA內被減壓，並且天線收容空間AK亦被減壓。其原因在於，天線罩5與殼體2相互相接的部分未被真空密封，電漿生成區域HA與天線收容空間AK經由間隙而相互連通。天線收容空間AK與電漿生成區域HA相比狹窄、且成為難以生成及維持電漿的區域(電漿非生成區域)，在對天線8進行通電而使電漿生成區域HA中產生電漿的狀態下，天線收容空間AK的氣壓可為與電漿生成區域HA同等的例如1Pa~100Pa。再者，如圖1所示，殼體2及載台6分別電性接地。 Specifically, in the housing 2, the plasma generating area HA is depressurized by exhausting air using the vacuum pump PO, and the antenna housing space AK is also depressurized. The reason is that the portion where the antenna cover 5 and the housing 2 are connected to each other is not vacuum sealed, and the plasma generating area HA and the antenna housing space AK are connected to each other through a gap. The antenna housing space AK is narrower than the plasma generating area HA and becomes an area where it is difficult to generate and maintain plasma (plasma non-generating area). When the antenna 8 is energized to generate plasma in the plasma generating area HA, the air pressure of the antenna housing space AK can be the same as that of the plasma generating area HA, for example, 1Pa~100Pa. Furthermore, as shown in FIG. 1, the housing 2 and the carrier 6 are electrically grounded respectively.

另外，在殼體2設置有對電漿生成區域HA的內部中的 壓力(真空度)進行檢測的第一壓力計P1(後述的圖9)，控制部15使用第一壓力計P1的檢測結果進行電漿生成區域HA的內部的真空度的控制。 In addition, a first pressure gauge P1 (FIG. 9 described later) for detecting the pressure (vacuum degree) inside the plasma generating area HA is provided in the housing 2, and the control unit 15 controls the vacuum degree inside the plasma generating area HA using the detection result of the first pressure gauge P1.

另外，在殼體2設置有對載台6的溫度進行探測的溫度感測器(未圖示)，該溫度感測器的探測結果被輸出至控制部15。然後，控制部15藉由進行使用所輸入的溫度感測器的探測結果的反饋控制，而在所述電漿處理中將載台6控制為預先規定的設定溫度。 In addition, a temperature sensor (not shown) for detecting the temperature of the carrier 6 is provided in the housing 2, and the detection result of the temperature sensor is output to the control unit 15. Then, the control unit 15 controls the carrier 6 to a predetermined set temperature during the plasma treatment by performing feedback control using the input detection result of the temperature sensor.

另外，在殼體2包括與所述規定的電漿處理對應的處理氣體供給部(參照後述的圖9)，並在處理氣體的氣氛下進行該電漿處理，所述處理氣體供給部將包含所述皮膜的成膜用氣體的處理氣體導入至殼體2的電漿生成區域HA(處理室)的內部。再者，處理氣體例如為氬、氫、氮、矽烷或氧。 In addition, the housing 2 includes a processing gas supply unit corresponding to the prescribed plasma treatment (refer to FIG. 9 described later), and the plasma treatment is performed under the atmosphere of the processing gas. The processing gas supply unit introduces the processing gas containing the film-forming gas of the film into the plasma generating area HA (processing chamber) of the housing 2. The processing gas is, for example, argon, hydrogen, nitrogen, silane or oxygen.

<控制部15> <Control Unit 15>

控制部15例如為包含中央處理單元(Central Processing Unit，CPU)、隨機存取記憶體(Random Access Memory，RAM)、唯讀記憶體(Read Only Memory，ROM)等，根據資訊處理進行電漿處理裝置1的各部的控制的功能區塊。具體而言，控制部15對電漿生成區域HA中的被處理基板H1的電漿處理執行規定的控制處理。 The control unit 15 is a functional block that controls various parts of the plasma processing device 1 according to information processing, including, for example, a central processing unit (CPU), a random access memory (RAM), a read-only memory (ROM), etc. Specifically, the control unit 15 performs a prescribed control process on the plasma processing of the substrate H1 to be processed in the plasma generating area HA.

如以上般構成的本實施方式1的電漿處理裝置1包括：殼體2，設置有第一開口部2b；以及真空罩4，以能夠拆裝的方式 安裝於第一開口部2b，且閉塞該第一開口部2b。另外，電漿處理裝置1包括：天線罩5，支撐於第一開口部2b的內部，且具有介電性；以及天線8，配設於至少由真空罩4及天線罩5包圍而形成的天線收容空間AK中，用於產生感應耦合性的電漿。進而，在電漿處理裝置1中，天線罩5形成有在真空罩4側開口並且構成天線收容空間AK的一部分的罩開口部5c，且所述天線罩5能夠自第一開口部2b拆卸。 The plasma processing device 1 of the present embodiment 1 constructed as described above includes: a housing 2, provided with a first opening 2b; and a vacuum cover 4, which is detachably mounted on the first opening 2b and closes the first opening 2b. In addition, the plasma processing device 1 includes: an antenna cover 5, which is supported inside the first opening 2b and has dielectric properties; and an antenna 8, which is arranged in an antenna accommodation space AK formed by at least the vacuum cover 4 and the antenna cover 5, and is used to generate inductively coupled plasma. Furthermore, in the plasma processing device 1, the antenna cover 5 is formed with a cover opening 5c that opens on the side of the vacuum cover 4 and constitutes a part of the antenna accommodation space AK, and the antenna cover 5 can be removed from the first opening 2b.

藉由以上結構，在本實施方式1中，可構成即便在設置有天線罩5的情況下亦可提高維護性的電漿處理裝置1。具體而言，在本實施方式1中，真空罩4及天線罩5可相對於殼體2自所述第一開口部2b側自如地取出。其結果，在本實施方式1中，在實施電漿處理裝置1的維護作業時，可容易地將真空罩4及天線罩5自殼體2拆除，從而可大幅降低該維護作業需要工夫及時間的可能性。 By means of the above structure, in the present embodiment 1, a plasma processing device 1 can be constructed that can improve the maintainability even when an antenna cover 5 is provided. Specifically, in the present embodiment 1, the vacuum cover 4 and the antenna cover 5 can be freely taken out from the first opening 2b side relative to the housing 2. As a result, in the present embodiment 1, when the plasma processing device 1 is maintained, the vacuum cover 4 and the antenna cover 5 can be easily removed from the housing 2, thereby greatly reducing the possibility that the maintenance work requires effort and time.

另外，在本實施方式1中，天線罩5包括：天線收容部5a，以與天線8的形狀一致的方式形成；以及罩開口部5c，構成天線收容空間AK的一部分。藉此，在本實施方式1中，能夠容易地將天線8接近於載台6上的被處理基板H1配置。其結果，在本實施方式1中，可效率良好地執行對被處理基板H1的電漿處理。 In addition, in the present embodiment 1, the antenna cover 5 includes: an antenna housing portion 5a formed in a manner consistent with the shape of the antenna 8; and a cover opening portion 5c, which constitutes a part of the antenna housing space AK. Thereby, in the present embodiment 1, the antenna 8 can be easily arranged close to the substrate H1 to be processed on the stage 6. As a result, in the present embodiment 1, the plasma treatment of the substrate H1 to be processed can be performed efficiently.

另外，在本實施方式1中，如圖2所示，天線8以藉由天線罩5的天線收容部5a向被處理基板H1側突出的方式配置於殼體2的內部。因此，在本實施方式1中，就天線8的圓周方向 進行考慮時，可使來自該天線8的電漿的產生區域大於180度。即，在圖2中，自較天線8的直徑更靠上側的部分亦可對被處理基板H1賦予電漿處理中使用的電漿。其結果，在本實施方式1中，可有效率地產生電漿處理中使用的電漿。 In addition, in the present embodiment 1, as shown in FIG2, the antenna 8 is arranged inside the housing 2 in a manner that the antenna housing portion 5a of the antenna cover 5 protrudes toward the substrate H1 to be processed. Therefore, in the present embodiment 1, when considering the circumferential direction of the antenna 8, the plasma generation area from the antenna 8 can be made larger than 180 degrees. That is, in FIG2, the portion further up than the diameter of the antenna 8 can also provide the substrate H1 to be processed with plasma used in plasma treatment. As a result, in the present embodiment 1, plasma used in plasma treatment can be efficiently generated.

另外，在本實施方式1中，如圖1所示，天線8的長邊方向的其中一端部及另一端部以由天線罩5的天線收容部5a保持的狀態配置於殼體2的內部。因此，在本實施方式1中，可自天線8的長邊方向的其中一端部及另一端部對被處理基板H1賦予電漿處理中使用的電漿。其結果，在本實施方式1中，可抑制來自其中一端部及另一端部的電漿的密度下降，從而可提高天線8的長邊方向的電漿密度的均勻性。 In addition, in the present embodiment 1, as shown in FIG. 1 , one end and the other end of the long side direction of the antenna 8 are arranged inside the housing 2 in a state of being held by the antenna housing portion 5a of the antenna cover 5. Therefore, in the present embodiment 1, the plasma used in the plasma treatment can be applied to the substrate H1 to be processed from one end and the other end of the long side direction of the antenna 8. As a result, in the present embodiment 1, the decrease in the density of the plasma from one end and the other end can be suppressed, thereby improving the uniformity of the plasma density in the long side direction of the antenna 8.

另外，在本實施方式1的電漿處理裝置1中，在殼體2的第一開口部2b側設置有以能夠拆卸的方式支撐天線罩5的凸緣3。藉此，在本實施方式1中，可容易地將天線罩5設置於殼體2。進而，在本實施方式1中，能夠容易地將真空罩4、天線罩5、及天線8等自殼體2拆卸，從而可容易地構成維護性優異的電漿處理裝置1。 In addition, in the plasma processing device 1 of the present embodiment 1, a flange 3 is provided on the first opening 2b side of the housing 2 to support the antenna cover 5 in a detachable manner. Thus, in the present embodiment 1, the antenna cover 5 can be easily installed on the housing 2. Furthermore, in the present embodiment 1, the vacuum cover 4, the antenna cover 5, and the antenna 8 can be easily removed from the housing 2, so that the plasma processing device 1 with excellent maintainability can be easily constructed.

另外，在本實施方式1的電漿處理裝置1中，天線罩5將電漿生成區域HA與電漿非生成區域(天線收容空間AK)相互隔開。藉此，在本實施方式1中，即便因異常放電的產生或電漿的產生使天線8等損傷，而在天線收容空間AK中產生微粒等污染物質，亦可藉由天線罩5大幅地抑制污染物質向電漿生成區域 HA側的侵入，從而可極力降低因污染物質產生的被處理基板H1的品質下降的可能性。 In addition, in the plasma processing device 1 of the present embodiment 1, the antenna cover 5 separates the plasma generating area HA from the plasma non-generating area (antenna housing space AK). Thus, in the present embodiment 1, even if the antenna 8 is damaged due to the generation of abnormal discharge or plasma, and contaminants such as particles are generated in the antenna housing space AK, the antenna cover 5 can greatly suppress the intrusion of the contaminants into the plasma generating area HA, thereby greatly reducing the possibility of quality degradation of the processed substrate H1 due to the contaminants.

另外，在本實施方式1中，由於針對每個天線8設置有真空罩4及天線罩5，因此能夠針對每個天線8進行設置作業、更換作業、及維護作業等。其結果，在本實施方式1中，可簡單地構成處理容易的作業性優異的電漿處理裝置1。 In addition, in the present embodiment 1, since a vacuum cover 4 and an antenna cover 5 are provided for each antenna 8, it is possible to perform installation work, replacement work, and maintenance work, etc. for each antenna 8. As a result, in the present embodiment 1, a plasma processing device 1 with easy processing and excellent operability can be simply constructed.

另外，在本實施方式1中，與使用螺固的所述先前例不同，天線罩5可在不進行螺固等的情況下設置於殼體2的內部。其結果，在本實施方式1中，即便在使電漿生成區域HA(處理室)的內部處於規定的真空度的真空環境下時，亦與所述先前例不同，可大幅降低在天線罩5中產生以螺固的部位為起點的開裂或變形等的可能性。 In addition, in the present embodiment 1, unlike the previous example using screw fastening, the antenna cover 5 can be installed inside the housing 2 without screw fastening. As a result, in the present embodiment 1, even when the inside of the plasma generation area HA (processing chamber) is placed in a vacuum environment with a predetermined vacuum degree, the possibility of cracks or deformations in the antenna cover 5 starting from the screw fastening position can be greatly reduced, unlike the previous example.

(驗證試驗的試驗結果) (Test results of verification test)

此處，使用圖3對本實施方式1的電漿處理裝置1中的試驗結果的一例進行具體說明。圖3是對所述電漿處理裝置1中的試驗結果的一例進行說明的圖。 Here, an example of the test results in the plasma processing device 1 of the present embodiment 1 is specifically described using FIG. 3 is a diagram for describing an example of the test results in the plasma processing device 1.

在驗證試驗中，使用本實施方式1的電漿處理裝置1並根據下述試驗條件進行了在作為被處理基板H1的矽基板上形成SiO2膜的成膜處理。即，作為試驗條件，將載台6的溫度設定為290℃，將矽烷(SiH4)及氧流量分別設定為300sccm及400sccm。另外，將處理室內的壓力設定為2.7Pa，將13.56MHz的電源9(高頻電源)的功率設定為1.1kW(天線根數：四根)。所設置的 四根天線8的排列方向(以下，稱為「天線排列方向」)上的間距為100mm。在四根各天線8的兩端部處測定的天線電流值的偏差為±4.4%。 In the verification test, the plasma processing device 1 of the present embodiment 1 was used to perform a film forming process of forming a SiO 2 film on a silicon substrate as a substrate H1 to be processed according to the following test conditions. That is, as test conditions, the temperature of the carrier 6 was set to 290°C, and the flow rates of silane (SiH 4 ) and oxygen were set to 300sccm and 400sccm, respectively. In addition, the pressure in the processing chamber was set to 2.7Pa, and the power of the 13.56MHz power supply 9 (high-frequency power supply) was set to 1.1kW (number of antennas: four). The spacing in the arrangement direction of the four antennas 8 (hereinafter referred to as the "antenna arrangement direction") was 100mm. The deviation of the antenna current value measured at both ends of each of the four antennas 8 was ±4.4%.

對於藉由電漿處理裝置1形成的SiO2膜，對天線排列方向上的成膜速度及折射率的分佈進行了測定。具體而言，對位於四根天線8中的相鄰的兩根天線8間的下方的SiO2膜進行了測定。對兩根天線8間的中央位置、及自該中央位置沿天線排列方向間隔20mm的四個部位共計五個部位求出SiO2膜的成膜速度及折射率，並將所求出的結果示於圖3中。在圖3中，圖表橫軸上的0mm的位置為兩根天線8間的中央位置。 The film formation speed and refractive index distribution of the SiO 2 film formed by the plasma processing device 1 in the antenna arrangement direction were measured. Specifically, the SiO 2 film located below the space between two adjacent antennas 8 among the four antennas 8 was measured. The film formation speed and refractive index of the SiO 2 film were calculated for a total of five locations, namely, the center position between the two antennas 8 and four locations at intervals of 20 mm from the center position in the antenna arrangement direction, and the calculated results are shown in FIG3. In FIG3, the position of 0 mm on the horizontal axis of the graph is the center position between the two antennas 8.

如圖3中實線及虛線分別所示般，SiO2膜的成膜速度及折射率均獲得了極高的均勻性。另外，所形成的SiO2膜的波長632.8nm的光的折射率成為約1.456，因此可確認到，可獲得與熱氧化矽膜接近的良好的SiO2膜。再者，SiO2膜的評價是在Φ4英吋(直徑100mm)的矽基板上成膜，並使用分光橢圓偏振術進行。 As shown by the solid line and the dotted line in Figure 3, the film formation speed and refractive index of the SiO2 film have achieved extremely high uniformity. In addition, the refractive index of the light with a wavelength of 632.8nm of the formed SiO2 film is about 1.456, so it can be confirmed that a good SiO2 film close to that of a thermally oxidized silicon film can be obtained. Furthermore, the evaluation of the SiO2 film was performed by forming the film on a Φ4-inch (100mm diameter) silicon substrate using spectral elliptical polarization.

〔實施方式2〕 [Implementation Method 2]

使用圖4對本揭示的實施方式2進行具體說明。圖4是對本揭示的實施方式2的電漿處理裝置1的結構進行說明的圖。再者，為了便於說明，對具有與在所述實施方式1中說明的構件相同的功能的構件附註相同的符號，且不重覆其說明。 The embodiment 2 of the present disclosure is specifically described using FIG. 4. FIG. 4 is a diagram illustrating the structure of the plasma processing device 1 of the embodiment 2 of the present disclosure. Furthermore, for the convenience of explanation, the same symbols are attached to the components having the same functions as the components described in the embodiment 1, and the description thereof is not repeated.

本實施方式2與所述實施方式1的主要不同點在於，在天線收容空間AK設置有抑制電漿的產生的抑制介電體14。 The main difference between this embodiment 2 and the embodiment 1 is that a suppressing dielectric 14 for suppressing the generation of plasma is provided in the antenna housing space AK.

如圖4所示，在本實施方式2的電漿處理裝置1中，抑制介電體14設置於真空罩4的第一開口部2b側的表面。抑制介電體14例如是使用氧化鋁等介電材料而構成，且構成為減小天線收容空間AK的大小。藉此，在本實施方式2的電漿處理裝置1中，可極力抑制在該天線收容空間AK的內部產生電漿。 As shown in FIG. 4 , in the plasma processing device 1 of the second embodiment, the suppression dielectric 14 is provided on the surface of the first opening 2b side of the vacuum cover 4. The suppression dielectric 14 is made of a dielectric material such as aluminum oxide, and is configured to reduce the size of the antenna housing space AK. Thus, in the plasma processing device 1 of the second embodiment, the generation of plasma inside the antenna housing space AK can be greatly suppressed.

另外，在本實施方式2的電漿處理裝置1中，真空罩保護用介電體16A及真空罩保護用介電體16B設置於真空罩4的第一開口部2b側的表面與天線罩5的罩支撐部5b之間。真空罩保護用介電體16A及真空罩保護用介電體16B例如是使用氧化鋁等介電材料而構成，在天線8產生電漿時，抑制因該電漿而在真空罩4中產生損壞。同樣地，抑制介電體14抑制因來自天線8的電漿而在真空罩4中產生損壞。 In addition, in the plasma processing device 1 of the second embodiment, the vacuum cover protection dielectric 16A and the vacuum cover protection dielectric 16B are arranged between the surface of the first opening portion 2b side of the vacuum cover 4 and the cover support portion 5b of the antenna cover 5. The vacuum cover protection dielectric 16A and the vacuum cover protection dielectric 16B are made of a dielectric material such as alumina, and when the antenna 8 generates plasma, the vacuum cover 4 is prevented from being damaged by the plasma. Similarly, the dielectric 14 prevents the vacuum cover 4 from being damaged by the plasma from the antenna 8.

藉由以上結構，本實施方式2的電漿處理裝置1起到與實施方式1者相同的效果。 With the above structure, the plasma processing device 1 of the second embodiment has the same effect as that of the first embodiment.

另外，在本實施方式2的電漿處理裝置1中，由於藉由抑制介電體14及真空罩保護用介電體16A及真空罩保護用介電體16B來覆蓋金屬製的真空罩4的殼體2的內部側表面，因此可抑制天線收容空間AK中的電漿生成，從而可抑制天線8及真空罩4的損傷等的產生。 In addition, in the plasma processing device 1 of the second embodiment, since the inner side surface of the housing 2 of the metal vacuum cover 4 is covered by the suppression dielectric 14 and the vacuum cover protection dielectric 16A and the vacuum cover protection dielectric 16B, the generation of plasma in the antenna housing space AK can be suppressed, thereby suppressing the generation of damage to the antenna 8 and the vacuum cover 4.

〔實施方式3〕 [Implementation Method 3]

使用圖5及圖6對本揭示的實施方式3進行具體說明。圖5為對本揭示的實施方式3的電漿處理裝置1的結構進行說明的 圖。圖6是圖5的V-V線剖面圖。再者，為了便於說明，對具有與在所述實施方式1中說明的構件相同功能的構件附註相同的符號，且不重覆其說明。另外，在圖5中，省略了電源9、阻抗調整部10、阻抗調整部11、冷卻器12及控制部15的圖示。 Implementation method 3 of the present disclosure is specifically described using FIG. 5 and FIG. 6. FIG. 5 is a diagram illustrating the structure of the plasma processing device 1 of implementation method 3 of the present disclosure. FIG. 6 is a cross-sectional view of line V-V of FIG. 5. Furthermore, for the sake of convenience, the same symbols are attached to the components having the same functions as the components described in the implementation method 1, and their descriptions are not repeated. In addition, in FIG. 5, the illustrations of the power supply 9, the impedance adjustment unit 10, the impedance adjustment unit 11, the cooler 12 and the control unit 15 are omitted.

本實施方式3與所述實施方式1的主要不同點在於，設置有支撐台16，所述支撐台16對真空罩4相對於殼體2以能夠拆卸的方式進行支撐。 The main difference between this embodiment 3 and the embodiment 1 is that a support platform 16 is provided, and the support platform 16 supports the vacuum cover 4 relative to the housing 2 in a detachable manner.

如圖5及圖6所示，在本實施方式3的電漿處理裝置1中，支撐台16設置於真空罩4與凸緣3之間。該支撐台16對真空罩4相對於殼體2以能夠拆卸的方式進行支撐。另外，天線罩5介隔著支撐台16而支撐於凸緣3。 As shown in FIG. 5 and FIG. 6 , in the plasma processing device 1 of the present embodiment 3, the support platform 16 is provided between the vacuum cover 4 and the flange 3. The support platform 16 supports the vacuum cover 4 relative to the housing 2 in a detachable manner. In addition, the antenna cover 5 is supported on the flange 3 via the support platform 16.

藉由以上結構，本實施方式3的電漿處理裝置1起到與實施方式1者相同的效果。 With the above structure, the plasma processing device 1 of the present embodiment 3 has the same effect as that of the embodiment 1.

另外，在本實施方式3的電漿處理裝置1中，可自殼體2與天線罩5一體地拆卸天線8及真空罩4。其結果，在本實施方式3中，可進一步提高電漿處理裝置1的維護性。 In addition, in the plasma processing device 1 of the third embodiment, the antenna 8 and the vacuum cover 4 can be removed from the housing 2 and the antenna cover 5 as a whole. As a result, in the third embodiment, the maintainability of the plasma processing device 1 can be further improved.

另外，在本實施方式3中，可對於支撐台16對天線罩5的支撐高度進行局部調整，與調整後的支撐台16一致地將天線8安裝於真空罩4。藉此，在本實施方式3中，可容易地進行天線8相對於天線罩5、進而相對於被處理基板H1的高度調整及其長邊方向的傾斜度調整。其結果，在本實施方式3中，可容易地構成可執行高精度的電漿處理的電漿處理裝置1。 In addition, in the third embodiment, the support height of the antenna cover 5 by the support platform 16 can be partially adjusted, and the antenna 8 can be installed in the vacuum cover 4 in accordance with the adjusted support platform 16. Thus, in the third embodiment, the height of the antenna 8 relative to the antenna cover 5 and the substrate H1 to be processed and the inclination in the long side direction can be easily adjusted. As a result, in the third embodiment, a plasma processing device 1 capable of performing high-precision plasma processing can be easily constructed.

〔實施方式4〕 [Implementation Method 4]

使用圖7及圖8對本揭示的實施方式4進行具體說明。圖7是對本揭示的實施方式4的電漿處理裝置1的結構進行說明的圖。圖8是圖7的VII-VII線剖面圖。再者，為了便於說明，對具有與在所述實施方式1中說明的構件相同功能的構件附註相同的符號，且不重覆其說明。另外，在圖7中，省略了真空泵PO的圖示。 The embodiment 4 of the present disclosure is specifically described using Figures 7 and 8. Figure 7 is a diagram illustrating the structure of the plasma processing device 1 of the embodiment 4 of the present disclosure. Figure 8 is a cross-sectional view of the line VII-VII of Figure 7. Furthermore, for the convenience of explanation, the same symbols are attached to the components having the same functions as the components described in the embodiment 1, and their descriptions are not repeated. In addition, in Figure 7, the illustration of the vacuum pump PO is omitted.

本實施方式4與所述實施方式1的主要不同點在於，構成為將天線收容空間AK保持為規定的真空度。 The main difference between this embodiment 4 and the above-mentioned embodiment 1 is that the antenna storage space AK is constructed to maintain a specified vacuum degree.

如圖7及圖8所示，在本實施方式4的電漿處理裝置1中，真空罩4包括罩本體4a及設置於該罩本體4a的連結孔4b。在連結孔4b依次氣密地安裝有配管H01(圖8)、閥V0(圖8)、配管H02(圖8)、及連接於配管H02的第二真空泵17B(後述的圖9)。 As shown in FIG. 7 and FIG. 8 , in the plasma processing device 1 of the present embodiment 4, the vacuum cover 4 includes a cover body 4a and a connection hole 4b provided in the cover body 4a. The connection hole 4b is airtightly installed with a pipe H01 (FIG. 8), a valve V0 (FIG. 8), a pipe H02 (FIG. 8), and a second vacuum pump 17B (FIG. 9 described later) connected to the pipe H02 in sequence.

另外，在本實施方式4的電漿處理裝置1中，真空罩4及天線罩5分別氣密地安裝於殼體2，天線8氣密地安裝於真空罩4。再者，所謂此處所述的氣密地安裝，是指在以規定的真空度維持壓力狀態的狀態下相互安裝。 In addition, in the plasma processing device 1 of the present embodiment 4, the vacuum cover 4 and the antenna cover 5 are respectively mounted airtightly on the housing 2, and the antenna 8 is mounted airtightly on the vacuum cover 4. Furthermore, the so-called airtight mounting mentioned here means mounting each other in a state where the pressure state is maintained at a specified vacuum degree.

而且，在本實施方式4的電漿處理裝置1中，藉由控制部15進行第二真空泵17B的控制，如圖8中箭頭S2所示，自四個天線收容空間AK經由配管H01、閥V0、及配管H02進行排氣。另外，在本實施方式4的電漿處理裝置1中，藉由控制部15進行 真空泵PO的控制，如圖7中箭頭S1所示，進行自電漿生成區域HA(處理室)的內部的排氣。 Moreover, in the plasma processing device 1 of the present embodiment 4, the second vacuum pump 17B is controlled by the control unit 15, and as shown by the arrow S2 in FIG8, the four antenna housing spaces AK are exhausted through the pipe H01, the valve V0, and the pipe H02. In addition, in the plasma processing device 1 of the present embodiment 4, the vacuum pump PO is controlled by the control unit 15, and as shown by the arrow S1 in FIG7, the inside of the plasma generation area HA (processing chamber) is exhausted.

藉由以上結構，本實施方式4的電漿處理裝置1起到與實施方式1者相同的效果。 With the above structure, the plasma processing device 1 of the present embodiment 4 has the same effect as that of the embodiment 1.

另外，在本實施方式4的電漿處理裝置1中，由於包括連接於天線收容空間AK的第二真空泵17B，因此可容易地將天線收容空間AK設為規定的真空度。其結果，在本實施方式4中，能夠可靠地抑制天線收容空間AK中的電漿的產生。 In addition, in the plasma processing device 1 of the fourth embodiment, since the second vacuum pump 17B connected to the antenna housing space AK is included, the antenna housing space AK can be easily set to a predetermined vacuum degree. As a result, in the fourth embodiment, the generation of plasma in the antenna housing space AK can be reliably suppressed.

另外，在本實施方式4的電漿處理裝置1中，真空罩4及天線罩5分別氣密地安裝於殼體2，天線8氣密地安裝於真空罩4。藉此，在本實施方式4中，可容易地維持天線收容空間AK中的規定的真空度。 In addition, in the plasma processing device 1 of the fourth embodiment, the vacuum cover 4 and the antenna cover 5 are respectively mounted airtightly on the housing 2, and the antenna 8 is mounted airtightly on the vacuum cover 4. Thus, in the fourth embodiment, the prescribed vacuum degree in the antenna storage space AK can be easily maintained.

進而，在本實施方式4的電漿處理裝置1中，即便在為了提高由天線8產生電漿的電力效率而減薄天線罩5的情況下，亦可抑制該天線罩5的破損等的產生。即，其原因在於，在本實施方式4中，與所述實施方式1不同，將天線收容空間AK的內部減壓為規定的真空度，因此，可減小作用於天線罩5的壓力差、即電漿生成區域HA(處理室)的壓力與天線收容空間AK(電漿非生成區域)的壓力差。 Furthermore, in the plasma processing apparatus 1 of the fourth embodiment, even when the antenna cover 5 is thinned in order to improve the power efficiency of plasma generated by the antenna 8, the occurrence of damage to the antenna cover 5 can be suppressed. That is, the reason is that in the fourth embodiment, unlike the first embodiment, the inside of the antenna housing space AK is depressurized to a predetermined vacuum degree, so the pressure difference acting on the antenna cover 5, that is, the pressure difference between the plasma generating area HA (processing chamber) and the antenna housing space AK (plasma non-generating area) can be reduced.

〔實施方式5〕 [Implementation Method 5]

使用圖9對本揭示的實施方式5進行具體說明。圖9是對本揭示的實施方式5的電漿處理裝置1的結構進行說明的圖。再者， 為了便於說明，對具有與在所述實施方式1中說明的構件相同功能的構件附註相同的符號，且不重覆其說明。另外，在圖9中，省略了電源9、阻抗調整部10、阻抗調整部11、冷卻器12、及控制部15的圖示。進而，在圖9中，使用箭頭表示所述處理氣體的移動方向。 FIG. 9 is used to specifically describe the embodiment 5 of the present disclosure. FIG. 9 is a diagram illustrating the structure of the plasma processing device 1 of the embodiment 5 of the present disclosure. Furthermore, for the convenience of explanation, the same symbols are attached to the components having the same functions as the components described in the embodiment 1, and their descriptions are not repeated. In addition, in FIG. 9, the illustrations of the power supply 9, the impedance adjustment unit 10, the impedance adjustment unit 11, the cooler 12, and the control unit 15 are omitted. Furthermore, in FIG. 9, arrows are used to indicate the movement direction of the processing gas.

本實施方式5與所述實施方式1的主要不同點在於，設置有作為對天線收容空間AK的壓力進行檢測的壓力計的第二壓力計P2。 The main difference between this embodiment 5 and the above-mentioned embodiment 1 is that a second pressure gauge P2 is provided as a pressure gauge for detecting the pressure of the antenna storage space AK.

如圖9所示，在本實施方式5的電漿處理裝置1中，連結孔2c設置於殼體本體2a。在該連結孔2c依次氣密地安裝有配管H13、閥V13、配管H1B、配管H11、閥V11、及配管H10。該些連結孔2c、配管H13、閥V13、配管H1B、配管H11、閥V11、及配管H10構成向電漿生成區域HA(處理室)的內部導入處理氣體的處理氣體供給部。進而，該處理氣體供給部包括氣密地安裝於配管H10的處理氣體供給源。而且，如上所述，該處理氣體供給部將來自處理氣體供給源的規定的處理氣體導入至電漿生成區域HA的內部，將電漿生成區域HA的內部設為該處理氣體的氣氛下。 As shown in FIG. 9 , in the plasma processing device 1 of the present embodiment 5, a connection hole 2c is provided in the housing body 2a. A pipe H13, a valve V13, a pipe H1B, a pipe H11, a valve V11, and a pipe H10 are sequentially and airtightly installed in the connection hole 2c. The connection hole 2c, the pipe H13, the valve V13, the pipe H1B, the pipe H11, the valve V11, and the pipe H10 constitute a processing gas supply unit for introducing processing gas into the interior of the plasma generating area HA (processing chamber). Furthermore, the processing gas supply unit includes a processing gas supply source airtightly installed in the pipe H10. Furthermore, as described above, the processing gas supply unit introduces a predetermined processing gas from a processing gas supply source into the interior of the plasma generating area HA, and sets the interior of the plasma generating area HA to the atmosphere of the processing gas.

另外，在本實施方式5的電漿處理裝置1中，配管H11A、閥V12、及配管H12依次氣密地安裝於配管H11。另外，配管H12氣密地安裝在設置於真空罩4的罩本體4a的連結孔4c，構成為藉由所述處理氣體供給部將所述處理氣體亦導入至天線收 容空間AK的內部。 In addition, in the plasma processing device 1 of the present embodiment 5, the pipe H11A, the valve V12, and the pipe H12 are installed in the pipe H11 in an airtight manner. In addition, the pipe H12 is installed in the connecting hole 4c of the cover body 4a provided in the vacuum cover 4 in an airtight manner, so that the processing gas is also introduced into the antenna accommodation space AK through the processing gas supply part.

另外，在本實施方式5的電漿處理裝置1中，配管H01、配管H1A、閥V2、配管H2、及第二真空泵17B依次氣密地安裝在設置於真空罩4的罩本體4a的連結孔4b。另外，在配管H01依次氣密地安裝有配管H1B、閥V1、及配管H3。配管H3氣密地安裝於後述的配管H4與配管H5的連接點。再者，第二真空泵17B為真空泵的一例。 In addition, in the plasma processing device 1 of the present embodiment 5, the piping H01, piping H1A, valve V2, piping H2, and the second vacuum pump 17B are sequentially installed in an airtight manner at the connection hole 4b of the cover body 4a provided in the vacuum cover 4. In addition, piping H1B, valve V1, and piping H3 are sequentially installed in an airtight manner at the piping H01. Pipe H3 is airtightly installed at the connection point between piping H4 and piping H5 described later. Furthermore, the second vacuum pump 17B is an example of a vacuum pump.

另外，在本實施方式5的電漿處理裝置1中，第二壓力計P2氣密地安裝於真空罩4的罩本體4a。而且，在本實施方式5的電漿處理裝置1中，控制部15使用第二壓力計P2的檢測結果來執行規定的控制處理。即，控制部15使用第二壓力計P2的檢測結果，進行閥V11、閥V12、閥V1、閥V2、及第二真空泵17B等的控制，藉此進行天線收容空間AK的內部的真空度的控制(詳情在後文敘述)。 In addition, in the plasma processing device 1 of the present embodiment 5, the second pressure gauge P2 is airtightly mounted on the cover body 4a of the vacuum cover 4. Moreover, in the plasma processing device 1 of the present embodiment 5, the control unit 15 uses the detection result of the second pressure gauge P2 to perform a predetermined control process. That is, the control unit 15 uses the detection result of the second pressure gauge P2 to control the valve V11, valve V12, valve V1, valve V2, and the second vacuum pump 17B, etc., thereby controlling the vacuum degree inside the antenna storage space AK (details are described later).

另外，在本實施方式5的電漿處理裝置1中，連結孔2d設置於殼體本體2a。在該連結孔2d依次氣密地安裝有壓力調整閥V5、配管H4、配管H5、閥V3、配管H6、及第一真空泵17A。另外，閥V4經由配管H7及配管H8而並聯且氣密地安裝於閥V3。再者，第一真空泵17A相當於圖1所示的真空泵PO。 In addition, in the plasma processing device 1 of the present embodiment 5, the connecting hole 2d is provided in the housing body 2a. The pressure regulating valve V5, the piping H4, the piping H5, the valve V3, the piping H6, and the first vacuum pump 17A are installed in the connecting hole 2d in an airtight manner. In addition, the valve V4 is installed in parallel and airtightly to the valve V3 via the piping H7 and the piping H8. Furthermore, the first vacuum pump 17A is equivalent to the vacuum pump PO shown in FIG. 1.

另外，在本實施方式5的電漿處理裝置1中，第一壓力計P1氣密地安裝於殼體2的殼體本體2a。而且，在本實施方式5的電漿處理裝置1中，控制部15使用第一壓力計P1的檢測結果 執行規定的控制處理。即，控制部15使用第一壓力計P1的檢測結果，進行閥V11、閥V13、壓力調整閥V5、閥V3、閥V4、及第一真空泵17A等的控制，藉此進行電漿生成區域HA的內部的真空度的控制(詳情在後文敘述)。 In addition, in the plasma processing device 1 of the present embodiment 5, the first pressure gauge P1 is airtightly mounted on the housing body 2a of the housing 2. Moreover, in the plasma processing device 1 of the present embodiment 5, the control unit 15 uses the detection result of the first pressure gauge P1 to perform a predetermined control process. That is, the control unit 15 uses the detection result of the first pressure gauge P1 to control the valve V11, valve V13, pressure adjustment valve V5, valve V3, valve V4, and the first vacuum pump 17A, thereby controlling the vacuum degree inside the plasma generation area HA (details will be described later).

<動作例> <Action example>

其次，亦參照圖10至圖12對本實施方式5的電漿處理裝置1的動作例進行具體說明。圖10是表示圖9所示的電漿處理裝置1的動作例的流程圖。圖11是表示圖9所示的電漿處理裝置1的另一動作例的流程圖。圖12是表示圖9所示的電漿處理裝置1的另一動作例的流程圖。 Next, the operation example of the plasma processing device 1 of the present embodiment 5 is specifically described with reference to FIGS. 10 to 12. FIG. 10 is a flow chart showing an operation example of the plasma processing device 1 shown in FIG. 9. FIG. 11 is a flow chart showing another operation example of the plasma processing device 1 shown in FIG. 9. FIG. 12 is a flow chart showing another operation example of the plasma processing device 1 shown in FIG. 9.

<真空排氣> <Vacuum exhaust>

首先，使用圖10對本實施方式5的電漿處理裝置1中的真空排氣的動作例進行具體說明。再者，在以下的說明中，主要對將電漿生成區域HA及天線收容空間AK自大氣壓的狀態分別設為規定的真空度的動作進行說明。 First, the vacuum exhaust operation example in the plasma processing device 1 of the present embodiment 5 is specifically described using FIG. 10. Furthermore, in the following description, the operation of setting the plasma generation area HA and the antenna storage space AK from the state of atmospheric pressure to a predetermined vacuum degree is mainly described.

如圖10的步驟S1所示，當控制部15自用戶領受到對電漿生成區域HA及天線收容空間AK進行真空排氣的指示時，將閥V1、閥V2、閥V3設為閉狀態。 As shown in step S1 of FIG10 , when the control unit 15 receives an instruction from the user to vacuum exhaust the plasma generating area HA and the antenna housing space AK, the valves V1, V2, and V3 are set to the closed state.

繼而，控制部15使第一真空泵17A及第二真空泵17B啟動(步驟S2)。然後，控制部15將閥V1及壓力調整閥V5設為開狀態(步驟S3)。 Next, the control unit 15 starts the first vacuum pump 17A and the second vacuum pump 17B (step S2). Then, the control unit 15 sets the valve V1 and the pressure regulating valve V5 to the open state (step S3).

其次，控制部15將慢排氣用的閥V4設為開狀態(步驟 S4)。在本實施方式5的電漿處理裝置1中，藉由如上所述般將閥V4先於閥V3設為開狀態，可在電漿生成區域HA(處理室)的內部及天線收容空間AK的內部，自慢排氣開始進行自大氣壓的排氣。其結果，在本實施方式5中，可降低由於處理室的急劇減壓，處理室內的氣體被冷卻的可能性。因此，在本實施方式5中，可抑制冷卻後的氣體中所含的水蒸氣成為水並附著於殼體本體2a的內壁面。 Next, the control unit 15 sets the valve V4 for slow exhaust to an open state (step S4). In the plasma processing device 1 of the present embodiment 5, by setting the valve V4 to an open state before the valve V3 as described above, exhaust from atmospheric pressure can be performed starting from slow exhaust inside the plasma generation area HA (processing chamber) and inside the antenna housing space AK. As a result, in the present embodiment 5, the possibility of the gas in the processing chamber being cooled due to the rapid decompression of the processing chamber can be reduced. Therefore, in the present embodiment 5, the water vapor contained in the cooled gas can be suppressed from becoming water and adhering to the inner wall surface of the shell body 2a.

進而，在本實施方式5的電漿處理裝置1中，可抑制電漿生成區域HA與天線收容空間AK的壓力差變大，並且以該些電漿生成區域HA的內部壓力及天線收容空間AK的內部壓力成為同等壓力值的方式逐漸進行減壓。其結果，在本實施方式5中，能夠可靠地抑制由所述壓力差引起的天線罩5的破損等的產生。 Furthermore, in the plasma processing device 1 of the fifth embodiment, the pressure difference between the plasma generating area HA and the antenna housing space AK can be suppressed from increasing, and the internal pressure of the plasma generating area HA and the internal pressure of the antenna housing space AK can be gradually reduced in such a way that the pressure value becomes the same. As a result, in the fifth embodiment, the occurrence of damage to the antenna cover 5 caused by the pressure difference can be reliably suppressed.

繼而，如圖10的步驟S5所示，控制部15對第一壓力計P1的檢測結果與第二壓力計P2的檢測結果之差的絕對值是否小於規定的設定值1(例如1kPa)進行判別。當控制部15判別出所述差的絕對值小於設定值1時(步驟S5中為是(YES))，前進至步驟S8。另外，該設定值1決定了天線罩5不會因所述壓力差而產生破損等的值，並設定於控制部15中。 Then, as shown in step S5 of FIG. 10 , the control unit 15 determines whether the absolute value of the difference between the detection result of the first pressure gauge P1 and the detection result of the second pressure gauge P2 is less than a predetermined setting value 1 (e.g., 1 kPa). When the control unit 15 determines that the absolute value of the difference is less than the setting value 1 (yes in step S5), it proceeds to step S8. In addition, the setting value 1 determines the value at which the antenna cover 5 will not be damaged due to the pressure difference, and is set in the control unit 15.

另一方面，當控制部15判別出所述差的絕對值為設定值1以上時(在步驟S5中為否(NO))，控制部15判斷為電漿處理裝置1發生異常，將閥V1及閥V4設為閉狀態(步驟S6)。繼而，控制部15使設置於電漿處理裝置1的顯示部或聲音輸出部等 告知部告知發生了異常(步驟S7)。藉由進行該異常告知，在本實施方式5的電漿處理裝置1中，用戶例如藉由進行手動操作，將所述處理室內設為大氣壓等規定壓力後，可實施再次的真空排氣的開始或者維護作業的開始。 On the other hand, when the control unit 15 determines that the absolute value of the difference is greater than the set value 1 (NO in step S5), the control unit 15 determines that an abnormality has occurred in the plasma processing device 1, and sets valves V1 and V4 to a closed state (step S6). Then, the control unit 15 causes a display unit or a sound output unit provided in the plasma processing device 1 to notify that an abnormality has occurred (step S7). By performing this abnormality notification, in the plasma processing device 1 of the present embodiment 5, the user can, for example, manually set the processing chamber to a specified pressure such as atmospheric pressure, and then start vacuum exhaust again or maintenance work.

另外，如圖10的步驟S8所示，控制部15對第一壓力計P1的檢測結果及第二壓力計P2的檢測結果是否均小於規定的設定值2(例如1kPa~10kPa)進行判別。當控制部15判別出第一壓力計P1的檢測結果及第二壓力計P2的檢測結果均為設定值2以上時(步驟S8中為否)，控制部15成為待機狀態。 In addition, as shown in step S8 of FIG. 10 , the control unit 15 determines whether the detection results of the first pressure gauge P1 and the detection results of the second pressure gauge P2 are both less than a specified set value 2 (e.g., 1 kPa to 10 kPa). When the control unit 15 determines that the detection results of the first pressure gauge P1 and the detection results of the second pressure gauge P2 are both greater than the set value 2 (no in step S8), the control unit 15 enters a standby state.

另一方面，當控制部15判別出第一壓力計P1的檢測結果及第二壓力計P2的檢測結果均小於設定值2時(步驟S8中為是)，控制部15將閥V3設為開狀態(步驟S9)。藉此，在本實施方式5的電漿處理裝置1中，可增大電漿生成區域HA的內部與第一真空泵17A的傳導率(conductance)，可以較使用閥V4的慢排氣更大的排氣速度進行電漿生成區域HA的內部的排氣，從而可以更短的時間將電漿生成區域HA的內部設為低壓的壓力。 On the other hand, when the control unit 15 determines that the detection results of the first pressure gauge P1 and the second pressure gauge P2 are both less than the set value 2 (yes in step S8), the control unit 15 sets the valve V3 to the open state (step S9). In this way, in the plasma processing device 1 of the present embodiment 5, the conductivity (conductance) between the inside of the plasma generating area HA and the first vacuum pump 17A can be increased, and the inside of the plasma generating area HA can be exhausted at a higher exhaust speed than the slow exhaust of the valve V4, so that the inside of the plasma generating area HA can be set to a low pressure in a shorter time.

繼而，如圖10的步驟S10所示，控制部15將閥V4設為閉狀態。然後，控制部15對第一壓力計P1的檢測結果及第二壓力計P2的檢測結果是否均小於規定的設定值3(例如，100Pa)進行判別(步驟S11)。當控制部15判別出第一壓力計P1的檢測結果及第二壓力計P2的檢測結果均為設定值3以上時(步驟S11中為否)，控制部15成為待機狀態。 Then, as shown in step S10 of FIG10 , the control unit 15 sets the valve V4 to a closed state. Then, the control unit 15 determines whether the detection results of the first pressure gauge P1 and the detection results of the second pressure gauge P2 are both less than a prescribed set value 3 (for example, 100Pa) (step S11). When the control unit 15 determines that the detection results of the first pressure gauge P1 and the detection results of the second pressure gauge P2 are both greater than the set value 3 (no in step S11), the control unit 15 becomes a standby state.

另一方面，當控制部15判別出第一壓力計P1的檢測結果及第二壓力計P2的檢測結果均小於設定值3時(步驟S11中為是)，控制部15將閥V1設為閉狀態(步驟S12)。其次，控制部15將閥V2設為開狀態(步驟S13)，並結束處理。 On the other hand, when the control unit 15 determines that the detection results of the first pressure gauge P1 and the second pressure gauge P2 are both less than the set value 3 (yes in step S11), the control unit 15 sets the valve V1 to the closed state (step S12). Next, the control unit 15 sets the valve V2 to the open state (step S13) and ends the processing.

<電漿處理> <Plasma treatment>

其次，使用圖11對本實施方式5的電漿處理裝置1中的電漿處理的動作例進行具體說明。 Next, the operation example of plasma processing in the plasma processing device 1 of the present embodiment 5 is specifically described using FIG. 11.

如圖11的步驟S21所示，當控制部15自用戶領受到開始電漿處理的指示時，藉由使所述處理氣體供給部運作，而開始進行將來自該處理氣體供給源的規定的處理氣體向電漿生成區域HA的內部及天線收容空間AK的內部的導入。 As shown in step S21 of FIG. 11 , when the control unit 15 receives an instruction from the user to start plasma processing, the processing gas supply unit is operated to start introducing the prescribed processing gas from the processing gas supply source into the plasma generation area HA and the antenna housing space AK.

繼而，控制部15對第二壓力計P2的檢測結果是否小於規定的設定值4(例如0.1Pa)進行判別(步驟S22)。當控制部15判別出第二壓力計P2的檢測結果為設定值4以上時(步驟S22中為否)，控制部15成為待機狀態。 Then, the control unit 15 determines whether the detection result of the second pressure gauge P2 is less than the specified setting value 4 (for example, 0.1Pa) (step S22). When the control unit 15 determines that the detection result of the second pressure gauge P2 is greater than the setting value 4 (no in step S22), the control unit 15 becomes a standby state.

另一方面，當控制部15判別出第二壓力計P2的檢測結果小於設定值4時(步驟S22中為是)，控制部15判斷為是在天線收容空間AK的內部難以生成及維持電漿的狀態。然後，控制部15進行電漿生成區域HA(處理室)的內部壓力的調整(步驟S23)。 On the other hand, when the control unit 15 determines that the detection result of the second pressure gauge P2 is less than the set value 4 (yes in step S22), the control unit 15 determines that it is difficult to generate and maintain plasma inside the antenna storage space AK. Then, the control unit 15 adjusts the internal pressure of the plasma generation area HA (processing chamber) (step S23).

繼而，如圖11的步驟S24所示，控制部15對第一壓力計P1的檢測結果是否小於規定的設定值5(例如1Pa~20Pa)進 行判別(步驟S24)。當控制部15判別出第一壓力計P1的檢測結果為設定值5以上時(步驟S24中為否)，控制部15成為待機狀態。 Then, as shown in step S24 of FIG. 11 , the control unit 15 determines whether the detection result of the first pressure gauge P1 is less than a specified set value 5 (e.g., 1Pa~20Pa) (step S24). When the control unit 15 determines that the detection result of the first pressure gauge P1 is greater than the set value 5 (no in step S24), the control unit 15 enters a standby state.

另一方面，當控制部15判別出第一壓力計P1的檢測結果小於設定值5時(步驟S24中為是)，控制部15判斷為能夠在電漿生成區域HA的內部執行穩定的電漿處理，將電源9設為接通狀態而將高頻電力供給至天線8(步驟S25)。藉此，在電漿生成區域HA的內部，開始對被處理基板H1進行規定的電漿處理。 On the other hand, when the control unit 15 determines that the detection result of the first pressure gauge P1 is less than the set value 5 (yes in step S24), the control unit 15 determines that stable plasma processing can be performed inside the plasma generation area HA, and sets the power supply 9 to the on state to supply high-frequency power to the antenna 8 (step S25). Thereby, the prescribed plasma processing of the substrate H1 to be processed is started inside the plasma generation area HA.

繼而，如圖11的步驟S26所示，控制部15對於是否經過了對電漿處理預先設定的設定時間進行判別。當控制部15判別出電漿處理的經過時間未經過設定時間時(步驟S26中為否)，控制部15繼續執行該電漿處理。 Then, as shown in step S26 of FIG. 11 , the control unit 15 determines whether the preset time for the plasma treatment has passed. When the control unit 15 determines that the elapsed time of the plasma treatment has not passed the set time (No in step S26), the control unit 15 continues to execute the plasma treatment.

另一方面，當控制部15判別出電漿處理的經過時間經過了設定時間時(步驟S26中為是)，控制部15判斷為該電漿處理已完成，將電源9設為接通狀態，將壓力調整閥V5設為全開狀態，並使所述處理氣體供給部的動作停止(步驟S27)。 On the other hand, when the control unit 15 determines that the plasma treatment has passed the set time (yes in step S26), the control unit 15 determines that the plasma treatment has been completed, sets the power supply 9 to the on state, sets the pressure adjustment valve V5 to the fully open state, and stops the operation of the treatment gas supply unit (step S27).

<大氣壓開放> <Atmospheric pressure opens>

其次，使用圖12對本實施方式5的電漿處理裝置1中的向大氣壓開放的大氣壓開放處理的動作例進行具體說明。再者，在以下的說明中，主要對所述處理氣體供給部的動作進行說明。 Next, the operation example of the atmospheric pressure open treatment in the plasma processing device 1 of the present embodiment 5 is specifically described using FIG. 12. Furthermore, in the following description, the operation of the processing gas supply unit is mainly described.

如圖12的步驟S31所示，當控制部15自用戶領受到電漿生成區域HA的內部壓力及天線收容空間AK的內部壓力的大氣 壓開放處理的指示時，將閥V11設為閉狀態。繼而，控制部15將閥V12及閥V13設為開狀態(步驟S32)。 As shown in step S31 of FIG. 12 , when the control unit 15 receives an instruction from the user to release the internal pressure of the plasma generating area HA and the internal pressure of the antenna housing space AK to atmospheric pressure, the valve V11 is set to a closed state. Then, the control unit 15 sets the valves V12 and V13 to an open state (step S32).

其次，控制部15將閥V11設為開狀態(步驟S33)。然後，控制部15對第一壓力計P1的檢測結果與第二壓力計P2的檢測結果之差的絕對值例如是否小於所述設定值1(例如1kPa)進行判別(步驟S34)。當控制部15判別出所述差的絕對值小於設定值1時(步驟S34中為是)，前進至步驟S37。如此，在本實施方式5的電漿處理裝置1中，在步驟S34中，藉由將所述設定值1用於臨限值，可大幅降低天線罩5因所述壓力差而產生破損等的可能性。 Next, the control unit 15 sets the valve V11 to the open state (step S33). Then, the control unit 15 determines whether the absolute value of the difference between the detection result of the first pressure gauge P1 and the detection result of the second pressure gauge P2 is less than the set value 1 (for example, 1 kPa) (step S34). When the control unit 15 determines that the absolute value of the difference is less than the set value 1 (yes in step S34), it proceeds to step S37. In this way, in the plasma processing device 1 of the present embodiment 5, in step S34, by using the set value 1 as the critical value, the possibility of the antenna cover 5 being damaged due to the pressure difference can be greatly reduced.

另一方面，當控制部15判別出所述差的絕對值為設定值1以上時(步驟S34中為否)，控制部15判斷為電漿處理裝置1發生了異常，將閥V11、閥V12、及閥V13設為閉狀態(步驟S35)。繼而，控制部15使設置於電漿處理裝置1的顯示部或聲音輸出部等告知部告知發生了異常(步驟S36)。藉由進行該異常告知，在本實施方式5的電漿處理裝置1中，用戶例如藉由進行手動操作，可在將所述處理室內設為大氣壓等規定壓力後，實施再次的真空排氣的開始或維護作業的開始。 On the other hand, when the control unit 15 determines that the absolute value of the difference is greater than the set value 1 (No in step S34), the control unit 15 determines that an abnormality has occurred in the plasma processing device 1, and sets valves V11, V12, and V13 to a closed state (step S35). Then, the control unit 15 causes a notification unit such as a display unit or a sound output unit provided in the plasma processing device 1 to notify that an abnormality has occurred (step S36). By performing this abnormality notification, in the plasma processing device 1 of the present embodiment 5, the user can, for example, manually operate to start vacuum exhaust again or maintenance work after setting the processing chamber to a specified pressure such as atmospheric pressure.

另外，如圖12的步驟S37所示，控制部15對第一壓力計P1的檢測結果及第二壓力計P2的檢測結果是否均大於規定的設定值6(例如，大氣壓；101.3kPa)進行判別。當控制部15判別出第一壓力計P1的檢測結果及第二壓力計P2的檢測結果均為 設定值6以下時(步驟S37中為否)，控制部15前進至步驟S34。 In addition, as shown in step S37 of FIG. 12, the control unit 15 determines whether the detection results of the first pressure gauge P1 and the detection results of the second pressure gauge P2 are both greater than a prescribed setting value 6 (for example, atmospheric pressure; 101.3 kPa). When the control unit 15 determines that the detection results of the first pressure gauge P1 and the detection results of the second pressure gauge P2 are both below the setting value 6 (No in step S37), the control unit 15 proceeds to step S34.

另一方面，當控制部15判別出第一壓力計P1的檢測結果及第二壓力計P2的檢測結果均大於設定值6時(步驟S37中為是)，控制部15判斷為大氣壓開放處理已完成，將閥V11、閥V12、及閥V13設為閉狀態(步驟S38)。 On the other hand, when the control unit 15 determines that the detection results of the first pressure gauge P1 and the second pressure gauge P2 are both greater than the set value 6 (yes in step S37), the control unit 15 determines that the atmospheric pressure release process has been completed and sets valves V11, V12, and V13 to the closed state (step S38).

藉由以上結構，本實施方式5的電漿處理裝置1起到與實施方式1者相同的效果。 With the above structure, the plasma processing device 1 of the present embodiment 5 has the same effect as that of the embodiment 1.

另外，在本實施方式5的電漿處理裝置1中，由於第二真空泵17B連接於天線收容空間AK，因此可容易地將天線收容空間AK設為規定的真空度，能夠可靠地抑制天線收容空間AK中的電漿的產生。 In addition, in the plasma processing device 1 of the fifth embodiment, since the second vacuum pump 17B is connected to the antenna housing space AK, the antenna housing space AK can be easily set to a predetermined vacuum degree, and the generation of plasma in the antenna housing space AK can be reliably suppressed.

另外，在本實施方式5的電漿處理裝置1中，由於控制部15使用第二壓力計P2的檢測結果來執行規定的控制處理，因此可更適當地進行天線收容空間AK的壓力控制，可使電漿處理裝置1適當地運作。 In addition, in the plasma processing device 1 of the present embodiment 5, since the control unit 15 uses the detection result of the second pressure gauge P2 to perform the prescribed control processing, the pressure control of the antenna housing space AK can be more appropriately performed, and the plasma processing device 1 can operate appropriately.

〔變形例1〕 [Variation 1]

使用圖13對本揭示的變形例1進行具體說明。圖13是對變形例1的電漿處理裝置1中的天線81~天線84的具體的配線進行說明的圖。再者，為了便於說明，對具有與在所述實施方式1中說明的構件相同功能的構件附註相同的符號，且不重覆其說明。 FIG. 13 is used to specifically describe the variant 1 of the present disclosure. FIG. 13 is a diagram illustrating the specific wiring of antennas 81 to 84 in the plasma processing device 1 of the variant 1. Furthermore, for the sake of convenience, the same symbols are attached to the components having the same functions as the components described in the embodiment 1, and the description thereof is not repeated.

本變形例1與所述實施方式1的主要不同點在於，使用兩個電源9A及9B等，使四個天線81、82、83及84運作。 The main difference between this variant 1 and the above-mentioned embodiment 1 is that two power sources 9A and 9B are used to operate four antennas 81, 82, 83 and 84.

如圖13所示，在本變形例1的電漿處理裝置1中，兩個天線81及82的各一端經由阻抗調整部10A而並聯連接於電源9A。天線81及天線82的另一端分別連接於阻抗調整部11A及阻抗調整部11B。兩個天線83及84的各一端經由阻抗調整部10B而並聯連接於電源9B。天線83及天線84的另一端分別連接於阻抗調整部11C及阻抗調整部11D。而且，在本變形例1的電漿處理裝置1中，控制部15以如下方式進行控制，即藉由對阻抗調整部11A~阻抗調整部11D的各可變電容器的電容進行變更，而有效率地對天線81~天線84供給高頻電力。 As shown in FIG. 13 , in the plasma processing device 1 of the present modification 1, one end of each of the two antennas 81 and 82 is connected in parallel to the power source 9A via the impedance adjustment section 10A. The other ends of the antennas 81 and 82 are connected to the impedance adjustment section 11A and the impedance adjustment section 11B, respectively. One end of each of the two antennas 83 and 84 is connected in parallel to the power source 9B via the impedance adjustment section 10B. The other ends of the antennas 83 and 84 are connected to the impedance adjustment section 11C and the impedance adjustment section 11D, respectively. Moreover, in the plasma processing device 1 of the present modification 1, the control section 15 controls in the following manner, that is, by changing the capacitance of each variable capacitor of the impedance adjustment section 11A to the impedance adjustment section 11D, high-frequency power is efficiently supplied to the antennas 81 to 84.

藉由以上結構，在本變形例1的電漿處理裝置1中，起到與所述實施方式1者相同的效果。 With the above structure, the plasma processing device 1 of this modification 1 has the same effect as that of the embodiment 1.

〔變形例2〕 [Variant 2]

使用圖14對本揭示的變形例2進行具體說明。圖14是對變形例2的電漿處理裝置1中的天線81~天線84的具體配線進行說明的圖。再者，為了便於說明，對具有與在所述實施方式1中說明的構件相同功能的構件附註相同的符號，且不重覆其說明。 FIG. 14 is used to specifically describe the modification 2 of the present disclosure. FIG. 14 is a diagram illustrating the specific wiring of antennas 81 to 84 in the plasma processing device 1 of modification 2. Furthermore, for the sake of convenience, the same symbols are attached to the components having the same functions as the components described in the embodiment 1, and their descriptions are not repeated.

本變形例2與所述實施方式1的主要不同點在於，使用兩個電源9A及9B與阻抗調整部11E及11D等，使四個天線81、82、83及84運作。 The main difference between this variation 2 and the embodiment 1 is that two power sources 9A and 9B and impedance adjustment units 11E and 11D are used to operate the four antennas 81, 82, 83 and 84.

如圖14所示，在本變形例2的電漿處理裝置1中，天線81的一端經由阻抗調整部10A而連接於電源9A。天線82的一端經由阻抗調整部11E而連接於天線81的另一端。天線82的另 一端接地。天線83的一端經由阻抗調整部10B而連接於電源9B。天線84的一端經由阻抗調整部11F而連接於天線83的另一端。天線84的另一端接地。而且，在本變形例2的電漿處理裝置1中，控制部15以如下方式進行控制，即藉由對阻抗調整部11E及阻抗調整部11F的各可變電容器的電容進行變更，而有效率地對天線81~天線84供給高頻電力。 As shown in FIG. 14 , in the plasma processing device 1 of the present modification 2, one end of the antenna 81 is connected to the power source 9A via the impedance adjustment unit 10A. One end of the antenna 82 is connected to the other end of the antenna 81 via the impedance adjustment unit 11E. The other end of the antenna 82 is grounded. One end of the antenna 83 is connected to the power source 9B via the impedance adjustment unit 10B. One end of the antenna 84 is connected to the other end of the antenna 83 via the impedance adjustment unit 11F. The other end of the antenna 84 is grounded. Moreover, in the plasma processing device 1 of the present modification 2, the control unit 15 controls in the following manner, that is, by changing the capacitance of each variable capacitor of the impedance adjustment unit 11E and the impedance adjustment unit 11F, high-frequency power is efficiently supplied to the antennas 81 to 84.

藉由以上結構，在本變形例2的電漿處理裝置1中，起到與所述實施方式1者相同的效果。 With the above structure, the plasma processing device 1 of this modification 2 has the same effect as that of the embodiment 1.

〔變形例3〕 [Variant 3]

使用圖15對本揭示的變形例3進行具體說明。圖15是對變形例3的電漿處理裝置1中的天線81~天線84的具體配線進行說明的圖。再者，為了便於說明，對具有與在所述實施方式1中說明的構件相同功能的構件附註相同的符號，且不重覆其說明。 FIG. 15 is used to specifically describe the variant 3 of the present disclosure. FIG. 15 is a diagram illustrating the specific wiring of antennas 81 to 84 in the plasma processing device 1 of the variant 3. Furthermore, for the sake of convenience, the same symbols are attached to the components having the same functions as the components described in the embodiment 1, and their descriptions are not repeated.

本變形例3與所述實施方式1的主要不同點在於，使用電源9與阻抗調整部11G及阻抗調整部11H等使四個天線81、82、83及84運作。 The main difference between this variant 3 and the above-mentioned embodiment 1 is that the four antennas 81, 82, 83 and 84 are operated using a power supply 9 and an impedance adjustment unit 11G and an impedance adjustment unit 11H.

如圖15所示，在本變形例3的電漿處理裝置1中，天線81的一端經由阻抗調整部10而連接於電源9。天線82的一端經由阻抗調整部11G而連接於天線81的另一端。天線82的另一端接地。天線83的一端連接於阻抗調整部10。天線84的一端經由阻抗調整部11H而連接於天線83的另一端。天線84的另一端接地。而且，在本變形例3的電漿處理裝置1中，控制部15以如 下方式進行控制，即藉由對阻抗調整部11G及阻抗調整部11H的各可變電容器的電容進行變更，有效率地對天線81~天線84供給高頻電力。 As shown in FIG. 15 , in the plasma processing device 1 of the present modification 3, one end of the antenna 81 is connected to the power source 9 via the impedance adjustment unit 10. One end of the antenna 82 is connected to the other end of the antenna 81 via the impedance adjustment unit 11G. The other end of the antenna 82 is grounded. One end of the antenna 83 is connected to the impedance adjustment unit 10. One end of the antenna 84 is connected to the other end of the antenna 83 via the impedance adjustment unit 11H. The other end of the antenna 84 is grounded. Moreover, in the plasma processing device 1 of the present modification 3, the control unit 15 controls in the following manner, that is, by changing the capacitance of each variable capacitor of the impedance adjustment unit 11G and the impedance adjustment unit 11H, high-frequency power is efficiently supplied to the antennas 81 to 84.

藉由以上結構，在本變形例3的電漿處理裝置1中，起到與所述實施方式1者相同的效果。 With the above structure, the plasma processing device 1 of this variant 3 has the same effect as that of the embodiment 1.

〔實施方式6〕 [Implementation Method 6]

使用圖16及圖17對本揭示的實施方式6進行具體說明。圖16是對本揭示的實施方式6的電漿處理裝置1的結構進行說明的圖。圖17是圖16的XVII-XVII線剖面圖。再者，為了便於說明，對具有與在所述實施方式1中說明的構件相同功能的構件附註相同的符號，且不重覆其說明。 The embodiment 6 of the present disclosure is specifically described using Figures 16 and 17. Figure 16 is a diagram illustrating the structure of the plasma processing device 1 of the embodiment 6 of the present disclosure. Figure 17 is a cross-sectional view taken along the line XVII-XVII of Figure 16. Furthermore, for the sake of convenience, the same symbols are attached to the components having the same functions as the components described in the embodiment 1, and the description thereof is not repeated.

本實施方式6與所述實施方式1的主要不同點在於，將天線罩5直接固定於真空罩4。 The main difference between this embodiment 6 and the embodiment 1 is that the antenna cover 5 is directly fixed to the vacuum cover 4.

如圖16及圖17所示，在本實施方式6的電漿處理裝置1中，天線罩5在較真空罩4更靠殼體2的內側固定於真空罩4。具體而言，罩支撐部5b例如使用未圖示的螺釘等而固定於真空罩4的內側表面，藉此將天線罩5直接安裝於真空罩4。 As shown in FIG. 16 and FIG. 17 , in the plasma processing device 1 of the present embodiment 6, the antenna cover 5 is fixed to the vacuum cover 4 on the inner side of the housing 2 closer to the vacuum cover 4. Specifically, the cover support portion 5b is fixed to the inner surface of the vacuum cover 4 using screws not shown, so that the antenna cover 5 is directly mounted on the vacuum cover 4.

另外，在本實施方式6中，如圖17所示，在殼體2(殼體本體2a)的上端面氣密地安裝有具有多個開口部的凸緣33。在本實施方式6中，於在殼體本體2a安裝有凸緣33的狀態下，凸緣33的開口部包含於將所述處理室的內部與外部連通的第一開口部2b中。換言之，於在殼體2的上端面安裝有凸緣3及真空罩4 的情況下，以能夠拆裝的方式安裝於殼體2的真空罩4與凸緣33一起閉塞第一開口部2b。 In addition, in the sixth embodiment, as shown in FIG. 17 , a flange 33 having a plurality of openings is airtightly mounted on the upper end surface of the housing 2 (housing body 2a). In the sixth embodiment, when the flange 33 is mounted on the housing body 2a, the opening of the flange 33 is included in the first opening 2b that connects the inside and the outside of the processing chamber. In other words, when the flange 3 and the vacuum cover 4 are mounted on the upper end surface of the housing 2, the vacuum cover 4 mounted on the housing 2 in a detachable manner closes the first opening 2b together with the flange 33.

如圖17所示，凸緣33例如包括五個凸緣構件33a、33b、33c、33d、33e，作為用於將真空罩4安裝於殼體2的間隔件發揮功能。換言之，該些各凸緣構件33a~33e是使用形成有供安裝真空罩4的階差部的板材而構成。另外，各凸緣構件33a~33e的一端部及另一端部固定於殼體本體2a的相互相向的兩邊的上表面(未圖示)。凸緣構件33a~凸緣構件33e以沿著天線8的長邊方向相互平行且在與該長邊方向正交的方向(即，圖17的紙面的左右方向)上成為等間隔的方式安裝於殼體2上。 As shown in FIG. 17 , the flange 33 includes, for example, five flange members 33a, 33b, 33c, 33d, and 33e, which function as spacers for mounting the vacuum cover 4 on the housing 2. In other words, each of the flange members 33a to 33e is formed using a plate having a step portion for mounting the vacuum cover 4. In addition, one end and the other end of each flange member 33a to 33e are fixed to the upper surfaces of the housing body 2a on both sides facing each other (not shown). The flange members 33a to 33e are mounted on the housing 2 in a manner that they are parallel to each other along the long side direction of the antenna 8 and are equally spaced in a direction orthogonal to the long side direction (i.e., the left-right direction of the paper surface of FIG. 17 ).

藉由以上結構，在本實施方式6的電漿處理裝置1中，起到與所述實施方式1者相同的效果。 With the above structure, the plasma processing device 1 of the present embodiment 6 has the same effect as that of the embodiment 1.

另外，在本實施方式6中，由於真空罩4、天線罩5及天線8一體地構成，因此在實施該些構件的更換作業等時，能夠一併進行更換。其結果，在本實施方式6中，可進一步提高電漿處理裝置1的維護性。 In addition, in the sixth embodiment, since the vacuum cover 4, the antenna cover 5, and the antenna 8 are integrally formed, they can be replaced together when replacing these components. As a result, in the sixth embodiment, the maintainability of the plasma processing device 1 can be further improved.

另外，在本實施方式6中，天線罩5固定於真空罩4，因此在安裝或取出天線8時，不需要直接操作天線罩5。藉此，在本實施方式6中，可大幅減小在天線罩5中產生欠缺或開裂等破損的可能性，從而可降低電漿處理裝置1的維護時間及成本。 In addition, in the sixth embodiment, the antenna cover 5 is fixed to the vacuum cover 4, so when installing or removing the antenna 8, there is no need to directly operate the antenna cover 5. Thus, in the sixth embodiment, the possibility of damage such as defects or cracks in the antenna cover 5 can be greatly reduced, thereby reducing the maintenance time and cost of the plasma processing device 1.

另外，在本實施方式6中，如圖16及圖17所例示般，天線罩5直接安裝於真空罩4，因此在將供天線8固定的真空罩4 安裝於殼體2之前，可對天線罩5與天線8的位置預先進行調整。換言之，可預先決定殼體2的內部的、天線罩5與天線8的相對位置。藉此，在本實施方式6中，與所述實施方式1~實施方式5者相比，可抑制電漿的密度向被處理基板H1的方向變動，在殼體2的內部，可容易地獲得電漿的所期望的密度分佈。 In addition, in the sixth embodiment, as shown in FIG. 16 and FIG. 17 , the antenna cover 5 is directly mounted on the vacuum cover 4, so before the vacuum cover 4 for fixing the antenna 8 is mounted on the housing 2, the positions of the antenna cover 5 and the antenna 8 can be adjusted in advance. In other words, the relative positions of the antenna cover 5 and the antenna 8 inside the housing 2 can be predetermined. Thus, in the sixth embodiment, compared with the first to fifth embodiments, the density of the plasma can be suppressed from changing in the direction of the substrate H1 to be processed, and the desired density distribution of the plasma can be easily obtained inside the housing 2.

〔實施方式7〕 [Implementation Method 7]

使用圖18及圖19對本揭示的實施方式7進行具體說明。圖18是對本揭示的實施方式7的電漿處理裝置1的結構進行說明的圖。圖19是圖18的IXX-IXX線剖面圖。再者，為了便於說明，對具有與在所述實施方式1中說明的構件相同功能的構件附註相同的符號，且不重覆其說明。 The embodiment 7 of the present disclosure is specifically described using Figures 18 and 19. Figure 18 is a diagram illustrating the structure of the plasma processing device 1 of the embodiment 7 of the present disclosure. Figure 19 is a cross-sectional view of the IXX-IXX line of Figure 18. Furthermore, for the convenience of explanation, the same symbols are attached to the components having the same functions as the components described in the embodiment 1, and their descriptions are not repeated.

本實施方式7與所述實施方式1的主要不同點在於，在真空罩4與凸緣33之間介隔著間隔件構件18。 The main difference between the present embodiment 7 and the above-mentioned embodiment 1 is that a spacer member 18 is interposed between the vacuum cover 4 and the flange 33.

如圖18及圖19所示，在本實施方式7的電漿處理裝置1中，間隔件構件18針對每個天線8而設置於真空罩4與凸緣33之間。該間隔件構件18例如使用金屬材料呈框狀地構成，且設置於殼體本體2a的上端面上。而且，間隔件構件18支撐呈矩形形狀形成的真空罩4的四邊。 As shown in FIG. 18 and FIG. 19 , in the plasma processing device 1 of the present embodiment 7, a spacer member 18 is provided between the vacuum cover 4 and the flange 33 for each antenna 8. The spacer member 18 is formed in a frame shape using a metal material, for example, and is provided on the upper end surface of the housing body 2a. Moreover, the spacer member 18 supports the four sides of the vacuum cover 4 formed in a rectangular shape.

藉由以上結構，本實施方式7的電漿處理裝置1起到與實施方式1者相同的效果。 With the above structure, the plasma processing device 1 of the present embodiment 7 has the same effect as that of the embodiment 1.

另外，在本實施方式7的電漿處理裝置1中，由於介隔著間隔件構件18而將真空罩4及安裝於所述真空罩4的天線8支 撐於殼體2，因此可藉由對間隔件構件18進行調整來調整天線8的位置。換言之，在本實施方式7中，與實施方式1者不同，可在不變更凸緣33的情況下容易地進行天線8相對於被處理基板H1的高度調整及其長邊方向的傾斜度調整。 In addition, in the plasma processing device 1 of the present embodiment 7, since the vacuum cover 4 and the antenna 8 mounted on the vacuum cover 4 are supported on the housing 2 via the spacer member 18, the position of the antenna 8 can be adjusted by adjusting the spacer member 18. In other words, in the present embodiment 7, unlike the embodiment 1, the height adjustment of the antenna 8 relative to the substrate H1 to be processed and the inclination adjustment in the long side direction can be easily performed without changing the flange 33.

〔總結〕 [Summary]

為了解決所述課題，本揭示的第一形態的電漿處理裝置為包括處理室的電漿處理裝置，所述電漿處理裝置包括：殼體，設置有將所述處理室與外部環境連通的第一開口部；外側罩，以能夠拆裝的方式安裝於所述第一開口部，且閉塞該第一開口部；內側罩，支撐於所述第一開口部的內部，且具有介電性；以及天線，配設於至少由所述外側罩及所述內側罩包圍而形成的包圍空間中，用於產生感應耦合性的電漿，所述內側罩形成有在所述外側罩側開口並且構成所述包圍空間的一部分的第二開口部，且所述內側罩能夠自所述第一開口部拆卸。 In order to solve the above problem, the first form of plasma processing device disclosed in the present invention is a plasma processing device including a processing chamber, and the plasma processing device includes: a housing, provided with a first opening portion connecting the processing chamber with the external environment; an outer cover, which is installed on the first opening portion in a detachable manner and closes the first opening portion; an inner cover, which is supported inside the first opening portion and has dielectric properties; and an antenna, which is arranged in an enclosed space formed by at least the outer cover and the inner cover, and is used to generate inductively coupled plasma, and the inner cover is formed with a second opening portion that opens on the side of the outer cover and constitutes a part of the enclosed space, and the inner cover can be removed from the first opening portion.

藉由所述結構，可提供一種可提高維護性的電漿處理裝置。 The structure can provide a plasma processing device that can improve maintainability.

本揭示的第二形態如第一形態所述的電漿處理裝置，可為在所述包圍空間設置有抑制所述電漿的產生的抑制介電體。 The second form of the present disclosure is a plasma processing device as described in the first form, wherein a suppressing dielectric for suppressing the generation of the plasma is provided in the enclosed space.

根據所述結構，可抑制包圍空間中的電漿生成，可抑制天線及外側罩的損傷等的產生。 According to the above structure, the generation of plasma in the surrounding space can be suppressed, and the damage to the antenna and the outer cover can be suppressed.

本揭示的第三形態如第一形態或第二形態所述的電漿處理裝置，可為在所述殼體的所述第一開口部側設置有支撐所述 內側罩的凸緣。 The third form of the present disclosure is a plasma processing device as described in the first form or the second form, wherein a flange for supporting the inner cover is provided on the first opening side of the housing.

藉由所述結構，可容易地將內側罩設置於殼體。 With the structure, the inner cover can be easily installed on the housing.

本揭示的第四形態如第三形態所述的電漿處理裝置，可為更包括支撐台，所述支撐台設置於所述外側罩與所述凸緣之間，對所述外側罩相對於所述殼體以能夠拆卸的方式進行支撐，所述內側罩介隔著所述支撐台而支撐於所述凸緣。 The fourth aspect of the present disclosure is a plasma processing device as described in the third aspect, and may further include a support platform, which is disposed between the outer cover and the flange, and supports the outer cover relative to the housing in a detachable manner, and the inner cover is supported on the flange via the support platform.

藉由所述結構，可與外側罩一體地拆卸天線及內側罩，從而可進一步提高維護性。 With the structure, the antenna and the inner cover can be removed together with the outer cover, thereby further improving maintainability.

本揭示的第五形態如第一形態至第四形態中任一形態所述的電漿處理裝置，可為更包括真空泵，所述真空泵連接於所述包圍空間。 The fifth form of the present disclosure is a plasma processing device as described in any one of the first to fourth forms, and may further include a vacuum pump, wherein the vacuum pump is connected to the enclosed space.

藉由所述結構，可容易地將包圍空間設為規定的真空度，從而能夠可靠地抑制包圍空間中的電漿的產生。 With the above structure, the enclosed space can be easily set to a predetermined vacuum degree, thereby reliably suppressing the generation of plasma in the enclosed space.

本揭示的第六形態如第一形態至第五形態中任一形態所述的電漿處理裝置，可為所述外側罩及所述內側罩分別氣密地安裝於所述殼體，所述天線氣密地安裝於所述外側罩。 The sixth form of the present disclosure is a plasma processing device as described in any one of the first to fifth forms, wherein the outer cover and the inner cover are respectively mounted airtightly on the housing, and the antenna is mounted airtightly on the outer cover.

藉由所述結構，可容易地維持包圍空間中的規定的真空度。 With the structure described above, it is easy to maintain a prescribed vacuum level in the enclosed space.

本揭示的第七形態如第一形態至第六形態中任一形態所述的電漿處理裝置，可為更包括壓力計，所述壓力計對所述包圍空間的壓力進行檢測。 The seventh form of the present disclosure, such as the plasma processing device described in any one of the first to sixth forms, may further include a pressure gauge, which detects the pressure of the enclosed space.

藉由所述結構，可利用壓力計對包圍空間的壓力進行檢 測。 With the structure, the pressure of the enclosed space can be detected using a pressure gauge.

本揭示的第八形態如第七形態所述的電漿處理裝置，可為更包括控制部，所述控制部對所述電漿處理裝置的各部進行控制，所述控制部使用所述壓力計的檢測結果來執行規定的控制處理。 The eighth aspect of the present disclosure is a plasma processing device as described in the seventh aspect, which may further include a control unit, which controls each part of the plasma processing device, and the control unit uses the detection result of the pressure gauge to perform a prescribed control process.

藉由所述結構，控制部可基於壓力計的檢測結果使電漿處理裝置適當地運作。 With the structure, the control unit can make the plasma processing device operate properly based on the detection results of the pressure gauge.

本揭示的第九形態如第八形態所述的電漿處理裝置，可為更包括電源，所述電源對所述天線供給電力，所述控制部進行所述電源的控制來作為所述控制處理。 The ninth form of the present disclosure is the plasma processing device described in the eighth form, and may further include a power source, the power source supplies power to the antenna, and the control unit controls the power source as the control process.

藉由所述結構，控制部可使天線更適當地運作，能夠可靠地抑制包圍空間中的電漿的產生，從而能夠更可靠地抑制天線的損傷等的產生。 With the above structure, the control unit can make the antenna operate more appropriately, and can reliably suppress the generation of plasma in the surrounding space, thereby more reliably suppressing the generation of antenna damage, etc.

本揭示的第十形態如第一形態或第二形態中任一形態所述的電漿處理裝置，可為所述內側罩在所述殼體的內側固定於所述外側罩。 The tenth form of the present disclosure is a plasma processing device as described in any one of the first form or the second form, wherein the inner cover is fixed to the outer cover on the inner side of the housing.

藉由所述結構，由於內側罩、外側罩、及天線一體地構成，因此可進一步提高維護性。 With the above structure, since the inner cover, outer cover, and antenna are integrally formed, maintainability can be further improved.

本揭示的第十一形態如第一形態至第十形態中任一形態所述的電漿處理裝置，可為所述外側罩介隔著間隔件構件而安裝於所述殼體。 The eleventh form of the present disclosure is a plasma processing device as described in any one of the first to tenth forms, wherein the outer cover can be mounted on the housing via a spacer component.

根據所述結構，藉由對間隔件構件進行調整而可調整天 線的位置。藉此，可容易地進行天線相對於被處理物的高度調整及其長邊方向的傾斜度調整，從而可容易地構成可執行高精度的電漿處理的電漿處理裝置。 According to the structure, the position of the antenna can be adjusted by adjusting the spacer member. Thus, the height of the antenna relative to the object to be processed and the inclination of the long side can be easily adjusted, so that a plasma processing device capable of performing high-precision plasma processing can be easily constructed.

本揭示並不限定於所述各實施方式，能夠在申請專利範圍所示的範圍內進行各種變更，且將不同的實施方式中揭示的技術性手段進行適宜組合而獲得的實施方式亦包含於本揭示的技術性範圍內。 This disclosure is not limited to the above-mentioned embodiments, and various changes can be made within the scope of the patent application, and the embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of this disclosure.

1:電漿處理裝置 1: Plasma treatment device

2:殼體 2: Shell

2a:殼體本體 2a: Shell body

2b:第一開口部 2b: First opening

3:凸緣 3: Flange

3b:第二邊部 3b: Second side

4:真空罩(外側罩) 4: Vacuum cover (outer cover)

5:天線罩(內側罩) 5: Antenna cover (inner cover)

5a:天線收容部 5a: Antenna storage unit

5b:罩支撐部 5b: Hood support part

5c:罩開口部 5c: Hood opening

6:載台 6: Carrier

8:天線 8: Antenna

9:電源 9: Power supply

10、11:阻抗調整部 10, 11: Impedance adjustment unit

12:冷卻器 12: Cooler

12a:冷卻器本體 12a: Cooler body

12b:配管 12b: Piping

13A、13B:天線絕緣部 13A, 13B: Antenna insulation part

15:控制部 15: Control Department

AK:天線收容空間(包圍空間) AK: Antenna containment space (enclosed space)

H1:被處理基板 H1: processed substrate

HA:電漿生成區域(處理室) HA: Plasma generation area (processing room)

PO:真空泵 PO: Vacuum pump

R1、R2:箭頭 R1, R2: Arrow

Claims (11)

一種電漿處理裝置，包括處理室，且所述電漿處理裝置包括：殼體，設置有將所述處理室與外部環境連通的第一開口部；外側罩，以能夠拆裝的方式安裝於所述第一開口部，且閉塞所述第一開口部；內側罩，支撐於所述第一開口部的內部，且具有介電性；以及天線，配設於至少由所述外側罩及所述內側罩包圍而形成的包圍空間中，用於產生感應耦合性的電漿，所述內側罩形成有在所述外側罩側開口並且構成所述包圍空間的一部分的罩開口部，且所述內側罩能夠自所述第一開口部拆卸。 A plasma processing device includes a processing chamber, and the plasma processing device includes: a housing, provided with a first opening portion connecting the processing chamber with an external environment; an outer cover, detachably mounted on the first opening portion and closing the first opening portion; an inner cover, supported inside the first opening portion and having dielectric properties; and an antenna, arranged in an enclosure formed by at least the outer cover and the inner cover, for generating inductively coupled plasma, the inner cover having a cover opening portion that opens on the side of the outer cover and constitutes a part of the enclosure space, and the inner cover can be removed from the first opening portion. 如請求項1所述的電漿處理裝置，其中，在所述包圍空間設置有抑制所述電漿的產生的抑制介電體。 The plasma processing device as described in claim 1, wherein a suppressing dielectric for suppressing the generation of the plasma is provided in the enclosed space. 如請求項1所述的電漿處理裝置，其中，在所述殼體的所述第一開口部側設置有支撐所述內側罩的凸緣。 The plasma processing device as described in claim 1, wherein a flange supporting the inner cover is provided on the first opening side of the housing. 如請求項3所述的電漿處理裝置，更包括支撐台，所述支撐台設置於所述外側罩與所述凸緣之間，對所述外側罩相對於所述殼體以能夠拆卸的方式進行支撐，所述內側罩介隔著所述支撐台而支撐於所述凸緣。 The plasma processing device as described in claim 3 further includes a support platform, which is disposed between the outer cover and the flange, and supports the outer cover relative to the housing in a detachable manner, and the inner cover is supported on the flange via the support platform. 如請求項1所述的電漿處理裝置，更包括真空泵， 所述真空泵連接於所述包圍空間。 The plasma processing device as described in claim 1 further includes a vacuum pump, and the vacuum pump is connected to the enclosed space. 如請求項5所述的電漿處理裝置，其中，所述外側罩及所述內側罩分別氣密地安裝於所述殼體，所述天線氣密地安裝於所述外側罩。 The plasma processing device as described in claim 5, wherein the outer cover and the inner cover are respectively mounted airtightly on the housing, and the antenna is mounted airtightly on the outer cover. 如請求項5或6所述的電漿處理裝置，更包括壓力計，所述壓力計對所述包圍空間的壓力進行檢測。 The plasma processing device as described in claim 5 or 6 further includes a pressure gauge, which detects the pressure of the enclosed space. 如請求項7所述的電漿處理裝置，更包括控制部，所述控制部對所述電漿處理裝置的各部進行控制，所述控制部使用所述壓力計的檢測結果來執行規定的控制處理。 The plasma processing device as described in claim 7 further includes a control unit, which controls each unit of the plasma processing device, and the control unit uses the detection result of the pressure gauge to perform a specified control process. 如請求項8所述的電漿處理裝置，更包括電源，所述電源對所述天線供給電力，所述控制部進行所述電源的控制來作為所述控制處理。 The plasma processing device as described in claim 8 further includes a power source, the power source supplies power to the antenna, and the control unit controls the power source as the control process. 如請求項1所述的電漿處理裝置，其中，所述內側罩在所述殼體的內側固定於所述外側罩。 A plasma processing device as described in claim 1, wherein the inner cover is fixed to the outer cover on the inner side of the housing. 如請求項1所述的電漿處理裝置，其中，所述外側罩介隔著間隔件構件而安裝於所述殼體。 The plasma processing device as described in claim 1, wherein the outer cover is mounted on the housing via a spacer member.
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020002947A1 (en) 2000-07-07 2002-01-10 Tsutomu Satoyoshi Inductive coupling plasma processing apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020002947A1 (en) 2000-07-07 2002-01-10 Tsutomu Satoyoshi Inductive coupling plasma processing apparatus

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