JP5215685B2 - Atomic layer growth equipment - Google Patents

Description

  The present invention relates to an atomic layer growth (hereinafter abbreviated as ALD (Atomic Layer Deposition)) apparatus for forming a thin film in units of atomic layers on a substrate.

In the ALD method, two types of gas mainly composed of elements constituting a film to be formed are alternately supplied onto a film formation target substrate, and a thin film is formed on the substrate in units of atomic layers repeatedly several times. This is a thin film forming technique for forming a film having a desired thickness. For example, when a SiO ₂ film is formed on a substrate, a source gas containing Si and an oxidizing gas containing O are used. Further, when a nitride film is formed on the substrate, a nitriding gas is used instead of the oxidizing gas.

  In the ALD method, only one layer or several layers of source gas are adsorbed on the substrate surface while the source gas is supplied, and the excess source gas does not contribute to growth. This is called growth self-stopping action (self-limiting function).

  The ALD method has high step coverage and film thickness controllability compared to the general CVD (Chemical Vapor Deposition) method, and is suitable for the formation of capacitors for memory elements and insulating films called “high-k gates”. Practical use is expected. In addition, since an insulating film can be formed at a low temperature of about 300 ° C., application to formation of a gate insulating film of a thin film transistor of a display device using a glass substrate such as a liquid crystal display is expected.

  Hereinafter, a conventional ALD apparatus will be described.

  FIG. 3 is a schematic diagram illustrating an example of a configuration of a conventional ALD apparatus. An ALD apparatus 70 shown in FIG. 1 includes a film forming container (film forming chamber) 12, a gas supply unit 14, and an exhaust unit 16.

  The film forming container 12 has a metal hollow box shape and is grounded. Inside the film forming container 12, an antenna array 28 including a plurality of antenna elements 26 and a substrate stage 32 incorporating a heater 30 are arranged in order from the upper wall side to the lower wall side. In the antenna array 28, a virtual plane constituted by arranging a plurality of antenna elements 26 in parallel at a predetermined interval is arranged in parallel with the substrate stage 32.

  As shown in a plan view from above in FIG. 4, the antenna element 26 is a rod-shaped monopole made of a conductor having a length of (2n + 1) / 4 times the wavelength of high-frequency power (n is 0 or a positive integer). An antenna (antenna body) 39 is housed in a cylindrical member 40 made of a dielectric. When the high frequency power generated by the high frequency power supply unit 34 is distributed by the distributor 36 and supplied to each antenna element 26 via each impedance matching unit 38, plasma is generated around the antenna element 26. .

  Each antenna element 26 is proposed by the present applicant in Patent Document 1, and is, for example, in a direction orthogonal to the direction of the gas flow of the oxidizing gas supplied from the supply hole 20 b toward the substrate stage 32. The film forming container 12 is attached to the side wall of the film forming container 12 so as to extend. In addition, the antenna elements 26 are arranged in parallel at a predetermined interval, and are arranged so that the feeding positions between the adjacent antenna elements 26 are opposite side walls.

  Next, the operation of the ALD apparatus 70 during film formation will be described.

  At the time of film formation, the substrate 42 is placed on the upper surface of the substrate stage 32. In addition, the substrate stage 32 is heated by the heater 30, and the substrate 42 placed on the substrate stage 32 is held at a predetermined temperature until film formation is completed.

For example, in the case of forming a SiO ₂ film on the substrate surface, after the inside of the film forming container 12 is evacuated in the horizontal direction by the exhaust unit 16, the source gas containing Si component is supplied from the gas supply unit 14 to the supply pipe 18a, The film is supplied in the horizontal direction into the film forming container 12 through a supply hole 20 a formed in the left wall of the film forming container 12. Thereby, the source gas is supplied to the surface of the substrate 42 and is adsorbed. At this time, no plasma is generated by the antenna element 26.

  Subsequently, the supply of the source gas was stopped, and surplus source gas other than the source gas adsorbed on the surface of the substrate 42 was formed from the film formation container 12 to the right wall of the film formation container 12 by the exhaust unit 16. The gas is exhausted in the horizontal direction through the exhaust hole 24 and the exhaust pipe 22.

  Subsequently, the oxidizing gas is supplied from the gas supply unit 14 into the film forming container 12 in the horizontal direction through the supply pipe 18 b and the supply hole 20 b formed in the left wall of the film forming container 12. At the same time, high frequency power is supplied from the high frequency power supply unit 34 to each antenna element 26. Thereby, plasma is generated around each antenna element 26 using the oxidizing gas, and the raw material gas adsorbed on the surface of the substrate 42 is oxidized.

  Thereafter, the supply of oxidizing gas and the supply of high-frequency power to the antenna element 26 were stopped, and surplus oxidizing gas and reaction products that did not contribute to oxidation were formed on the right wall of the film forming container 12 by the exhaust unit 16. The gas is exhausted in the horizontal direction through the exhaust hole 24 and the exhaust pipe 22.

As described above, the SiO ₂ film is formed on the substrate 42 in units of atomic layers by a series of steps including supply of source gas → exhaust of excess source gas → supply of oxidizing gas → exhaust of excess oxidizing gas. By repeating this process several times, a SiO ₂ film having a predetermined thickness is formed on the substrate 42.

JP 2003-86581 A

  In the ALD device 70, when a film is formed on the surface of the substrate 42, the film is also deposited on the surface of each antenna element 26. Part of the film deposited on the surface of the antenna element 26 falls, or reaction products (fine particles) generated in dust or gas phase become particles, which contaminates the surface of the substrate 42 and degrades the film quality. There was a problem. Further, when the number of antenna elements increases as the area of the substrate 42 increases, there is a problem that the cleaning of the antenna elements 26 during maintenance becomes difficult.

  An object of the present invention is to provide an atomic layer growth apparatus that can solve the problems of the prior art, reduce contamination by particles, and easily clean the antenna array during maintenance.

In order to achieve the above object, the present invention provides an atomic layer growth apparatus for generating an oxide film on a substrate by generating plasma using an oxidizing gas,
A film forming container to which a source gas and an oxidizing gas are supplied, an antenna array in which a plurality of rod-shaped antenna bodies for generating plasma in the film forming container are arranged in parallel, and the substrate are mounted. A substrate stage,
The antenna array is disposed between the upper wall of the film forming container and the substrate stage in parallel with the substrate stage, and the plurality of antenna bodies have a surface on the substrate stage side facing the substrate stage. Is housed in a housing member made of a dielectric formed in parallel with the substrate, and is configured as an integral type. The housing member opens the space below the sheath thickness from the upper wall and side wall of the film forming container, and forms the film. An atomic layer growth apparatus is provided that is disposed so as not to contact a wall surface of a container .

The present invention also provides an atomic layer growth apparatus for generating a nitride film on a substrate by generating plasma using a nitriding gas,
A film forming container to which a source gas and a nitriding gas are supplied, an antenna array in which a plurality of rod-shaped antenna bodies for generating plasma in the film forming container are arranged in parallel, and the substrate are mounted. A substrate stage,
The antenna array is disposed between the upper wall of the film forming container and the substrate stage in parallel with the substrate stage, and the plurality of antenna bodies have a surface on the substrate stage side facing the substrate stage. Is housed in a housing member made of a dielectric formed in parallel with the substrate, and is configured as an integral type. The housing member opens the space below the sheath thickness from the upper wall and side wall of the film forming container, and forms the film. Provided is an atomic layer growth apparatus which is disposed so as not to contact a wall surface of a container .

  The antenna body is preferably formed of a material having a thermal expansion coefficient substantially equal to that of the housing member. For example, it is preferable that the material of the housing member is quartz, and the material of the antenna body is one of Invar alloy, super invar, and stainless invar.

  In the present invention, since the plurality of antenna bodies are housed in a housing member made of a dielectric material and are integrated, the area where the antenna array and the film forming gas are in contact can be minimized. For this reason, since the film attached to the antenna array (the surface of the storage member on the substrate stage side) is greatly reduced, the generation of particles can be greatly reduced. In addition, since it is configured as an integral type, cleaning of the antenna array (the surface of the storage member on the substrate stage side) during maintenance is easy.

  Hereinafter, an atomic layer growth apparatus of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

  FIG. 1 is a schematic diagram of an embodiment showing a configuration of an ALD apparatus of the present invention. The ALD apparatus 10 shown in the figure applies two types of film forming gases (raw material gas and oxidizing gas or nitriding gas) mainly composed of elements constituting the film to be formed by applying the ALD method. The film is alternately supplied onto the film target substrate. At that time, in order to enhance the reaction activity, plasma is generated to form an oxide film or nitride film of the source gas on the substrate in units of atomic layers. A film having a desired thickness is formed by repeating the process for a plurality of cycles with the above process as one cycle.

  The ALD apparatus 10 includes a film forming container 12, a gas supply unit 14, and exhaust units 16 and 17 such as a vacuum pump. Hereinafter, a case where an oxide film is formed on a substrate will be described as an example, but the same applies to a nitride film.

  Here, the gas supply unit 14 includes supply holes 20a formed on one side wall (the left wall in the drawing) of the film formation container 12 (a film formation chamber 48 described later) via supply pipes 18a and 18b, respectively. 20b. The gas supply unit 14 supplies the source gas into the film forming chamber 48 in the horizontal direction through the supply pipe 18a and the supply hole 20a, or the gas supply unit 14 in the film forming chamber 48 through the supply pipe 18b and the supply hole 20b. For example, an oxidizing gas such as oxygen gas or ozone gas is supplied in the horizontal direction. The supply of the source gas and the oxidizing gas is performed alternately.

  On the other hand, the exhaust unit 16 is connected to an exhaust hole 24 formed in a side wall (right wall in the figure) of the film forming chamber 48 facing the left wall via the exhaust pipe 22. The exhaust unit 16 exhausts the source gas and the oxidizing gas alternately supplied into the film forming chamber 48 in the horizontal direction via the exhaust hole 24 and the exhaust pipe 22. The exhaust unit 17 is connected to an exhaust hole 25 formed in the lower wall of the film forming container 12 (a vacuum chamber (load lock chamber) 50 described later) through an exhaust pipe 23. The exhaust unit 17 basically evacuates the vacuum chamber 50 through the exhaust hole 25 and the exhaust pipe 23.

  Although not shown, an open / close valve (for example, an electromagnetic valve) for controlling conduction between the gas supply unit 14 and the film formation chamber 48 is provided in the middle of the supply pipes 18a and 18b. In the middle, on-off valves for controlling the conduction between the exhaust parts 16 and 17 and the film forming chamber 48 and the vacuum chamber 50 are provided.

  When the gas is supplied from the gas supply unit 14 into the film forming chamber 48 of the film forming container 12, one of the opening / closing valves of the supply pipes 18 a and 18 b is opened to supply the gas into the film forming chamber 48. When the gas supplied into the film forming chamber 48 is exhausted, the open / close valve of the exhaust pipe 22 is opened. When the vacuum chamber 50 of the film forming container 12 is evacuated, the open / close valve of the exhaust pipe 23 is opened.

  The film forming container 12 has a metal hollow box shape and is grounded. Inside the film formation container 12, an antenna array 28 composed of a plurality of rod-shaped monopole antennas (antenna main bodies) 39 and a substrate stage 32 incorporating a heater 30 are arranged in order from the upper wall side to the lower wall side. Has been. In the antenna array 28, a virtual plane constituted by each antenna body 39 is arranged in parallel with the substrate stage 32.

  The antenna array 28 generates plasma using an oxidizing gas. The left wall of the film forming container 12 in which the supply hole 20 is formed and the right wall opposite to the left wall in which the exhaust hole 24 is formed. And a plurality of rod-shaped antenna bodies 39 made of a conductor such as copper, aluminum, or platinum are provided in a space between the upper wall of the film formation container 12 and the substrate stage 32. Are arranged in parallel with each other.

As shown in FIG. 2, high frequency power (high frequency current) in the VHF band (for example, 80 MHz) generated by the high frequency power supply unit 34 is distributed by a distributor 36, and each antenna body is connected via an impedance matching unit 38. 39. The impedance matching unit 38 is used together with the adjustment of the frequency of the high frequency power generated by the high frequency power supply unit 34, and corrects the impedance mismatch caused by the change in the load of the antenna body 39 during the generation of plasma.

  Each antenna body 39 is proposed by the present applicant in Patent Document 1 and extends in a direction orthogonal to the direction of the gas flow of the oxidizing gas supplied from the supply hole 20 b toward the substrate stage 32. In addition, it is electrically insulated and attached to the side wall of the film forming container 12. Further, they are arranged so that the feeding positions between adjacent antenna main bodies 39 are opposite side walls (the feeding directions are opposite to each other). As a result, electromagnetic waves are uniformly formed across the virtual plane of the antenna array 28.

  The electric field strength in the longitudinal direction of the antenna body 39 is zero at the supply end of the high-frequency power, and is maximum at the tip end (the opposite end of the supply end). Accordingly, the power feeding positions between the adjacent antenna bodies 39 are arranged so as to be opposite to each other, and high frequency power is supplied to the respective antenna bodies 39 from opposite directions to radiate from the respective antenna bodies 39. The generated electromagnetic waves are synthesized to form a uniform plasma, and a film having a uniform film thickness can be formed.

  Each antenna main body 39 is arranged in a direction parallel to the surface of the substrate stage 32 (the mounting surface of the substrate 42), and the arrangement direction of the plurality of antenna main bodies 39 is a direction parallel to the mounting surface of the substrate stage 32. is there.

  For example, the antenna body 39 has a diameter of about 6 mm, and the interval between adjacent antenna bodies 39 is about 50 mm. When the pressure in the film formation container 12 is about 20 Pa, when the high frequency power of about 1500 W is supplied from the high frequency power supply unit 34, the antenna length of the antenna body 39 is (2n + 1) / 4 times the wavelength of the high frequency power (n is When the phase is equal to 0 or a positive integer, a standing wave is generated and resonates, and plasma is generated in the vicinity of the lower surface of the storage member 41.

  The plurality of antenna main bodies 39 are housed in a housing member 41 having a surface (lower surface) on the substrate stage 32 side formed in parallel with the substrate stage 32, which is made of a dielectric material such as quartz or ceramics, and is integrated. It is configured. By covering the antenna main body 39 with a dielectric, the capacity and inductance of the antenna are adjusted, high-frequency power can be efficiently propagated along the longitudinal direction, and electromagnetic waves are efficiently radiated from the antenna main body 39 to the surroundings. be able to.

  Since the lower surface of the storage member 41 is formed in a planar shape, the area where the antenna array contacts the film forming gas can be minimized. For this reason, since the film attached to the antenna array (the lower surface of the storage member 41) is greatly reduced, the generation of particles can be greatly reduced. Moreover, since it is configured as an integral type, cleaning of the antenna array (the lower surface of the storage member 41) during maintenance is easy.

  An antenna array support member 52 that protrudes from the inner wall surface of the side wall toward the center is provided inside the film forming container 12. An L-shaped step corresponding to the height of the side surface of the support member 52 is provided on the lower surface of the edge of the storage member 41. In a state where the antenna array 28 is placed on the support member 52, the upper surface of the support member 52 and the stepped portion on the lower surface of the edge of the storage member 41 are in contact with each other, and the height of the lower surface of the storage member 41 is 52 is positioned so as to be substantially the same height (level) as the bottom surface.

  The storage member 41 is spaced from the wall surface (upper wall and all side walls) of the film formation container 12 by a space (gap) equal to or less than the sheath thickness, for example, 0.1 to 1 mm so as not to contact the wall surface of the film formation container 12. It is arranged. The material (material) of the film forming container 12 is, for example, aluminum or stainless steel, and the material of the storage member 41 is quartz or ceramics as described above. Therefore, by providing a space between the two, even if the inside of the film forming chamber 48 becomes high temperature during film formation, problems due to the difference in thermal expansion coefficient between them (such as cracks in the storage member 41) can be solved.

  Even if there is a space below the sheath thickness between the wall surface of the film forming container 12 and the surface of the storage member 41, plasma is not generated in the space below the sheath thickness during film formation. That is, plasma is generated only on the lower surface side of the storage member 41 involved in film formation, and plasma that does not contribute to film formation is not wasted. Further, as described above, no plasma is generated in the space below the sheath thickness, so that the surface of the storage member 41 facing the wall surface of the film forming container 12 is not scraped by the plasma.

The antenna array 28 may be manufactured by, for example, making a hole in the storage member 41 and inserting the antenna main body 39. However, the antenna main body 39 is put in a molten glass, and then the glass is cooled. It is easier and more desirable. In this case, since the antenna body 39 is in close contact with the housing member 41, it is desirable to form the antenna body 39 from a material having a thermal expansion coefficient substantially equal to that of the housing member 41 in order to solve the problem due to the difference in thermal expansion coefficient. Here, the material having substantially the same coefficient of thermal expansion means a material whose difference is less than 10 ⁻⁶ .

  The material whose coefficient of thermal expansion is substantially equal to that of the housing member 41 is not limited at all. For example, when the material of the housing member 41 is quartz, the material of the antenna body 39 may be an invar (63.5Fe-36.5Ni) alloy, super invar ( 63Fe-32Ni-5Co) and stainless steel invar (36.5Fe-54Co-9.5Cr) can be exemplified. Of these, super invar and stainless invar are particularly desirable.

For example, the thermal expansion coefficient (linear expansion coefficient) of quartz is 10 ⁻⁷ / K. On the other hand, the thermal expansion coefficient (linear expansion coefficient) of the super invar and the stainless invar is ± 0.1 × 10 ⁻⁶ , approximately the same as the thermal expansion coefficient of quartz and extremely small. Thus, by forming the antenna body 39 with a material whose thermal expansion coefficient is substantially equal to that of the housing member 41, the problem due to the difference in thermal expansion coefficient between them can be solved.

Note that it is desirable to increase the physical (structural) adsorption force by blasting (for example, sand blasting) the lower surface of the storage member 41 so that the surface of the lower surface is uneven. Thereby, it can reduce that the reaction product adhering to the lower surface of the storage member 41 peels off and generates particles. In addition, since the surface of the storage member 41 is shaved by plasma, it is desirable to coat the surface of the storage member 41 with a protective layer such as alumina in order to prevent this.

  Subsequently, the substrate stage 32 is, for example, a rectangular metal plate having a size smaller than the inner wall surface of the film forming container 12 and is moved up and down by an elevating mechanism 44 such as a power cylinder. A heater stopper (that is, a stopper for the substrate stage 32) 46 that protrudes from the inner wall surface of the side wall toward the center is provided inside the film forming container 12. An L-shaped step corresponding to the height of the side surface of the heater stopper 46 is provided on the upper surface of the edge portion of the substrate stage 32.

  When the substrate stage 32 is raised, the lower surface of the heater stopper 46 and the stepped portion on the upper surface of the edge of the substrate stage 32 come into contact with each other, and the height of the upper surface of the substrate stage 32 is substantially the same height as the upper surface of the heater stopper 46 ( It is positioned to be flush with each other. At this time, the inside of the film forming container 12 is separated into a film forming chamber 48 which is a space above the substrate stage 32 and a vacuum chamber 50 which is a space below the substrate stage 32. The film forming chamber 48 is hermetically sealed by being evacuated by the exhaust unit 17.

  That is, as shown in FIG. 1, the lower wall of the film forming chamber 48 including the upper surface of the substrate stage 32 is formed so as to be flush with the predetermined film when the predetermined film is formed on the substrate 42.

  On the other hand, when the substrate stage 32 is lowered, a gap 51 with a predetermined interval is formed between the lower surface of the heater stopper 46 and the stepped portion on the upper surface of the edge of the substrate stage 32. By lowering the substrate stage 32 when the source gas or the like supplied to the film forming chamber 48 is exhausted, the film forming gas supplied into the film forming chamber 48 is allowed to pass through the gap 51 or the gap 51 and the exhaust hole. It is also possible to exhaust from both of 24. Since the size of the gap 51 is larger than the size of the exhaust hole 24, the film forming gas can be exhausted from the film forming chamber 48 at a high speed.

Next, the operation of the ALD apparatus 10 during film formation will be described.
The following description is an example in the case where a SiO ₂ film is formed on the surface of the substrate 42 of 370 mm long × 470 mm wide.

  During film formation, the substrate stage 32 is lowered by the elevating mechanism 44, and the substrate 42 is placed on the upper surface of the substrate stage 32 in the vacuum chamber 50. Thereafter, the substrate stage 32 is raised to a position where the upper surface of the edge of the substrate stage 32 comes into contact with the lower surface of the heater stopper 46, and the vacuum chamber 50 is evacuated by the exhaust unit 17 to seal the film forming chamber 48. Further, the substrate stage 32 is heated by the heater 30, and the substrate 42 placed on the substrate stage 32 is maintained at a predetermined temperature, for example, about 400 ° C. until film formation is completed.

  After the inside of the film forming chamber 48 is evacuated in the horizontal direction by the exhaust unit 16 to a pressure of about 2 to 3 Pa, the source gas containing Si is supplied from the gas supply unit 14 into the film forming chamber 48 for about 1 second. The pressure is supplied in the horizontal direction and the pressure is about 20 Pa. Thereby, the source gas is adsorbed on the surface of the substrate 42. At this time, no plasma is generated by the antenna array 28.

  Subsequently, the supply of the source gas is stopped, and surplus source gas other than the source gas adsorbed on the surface of the substrate 42 is exhausted from the film forming chamber 48 in the horizontal direction by the exhaust unit 16 for about 1 second. At this time, the gas supply unit 14 supplied the purge gas (inert gas) into the film forming chamber 48 through the supply pipe 18a and the supply hole 20a, and the gas was supplied into the film forming chamber 48 by the exhaust unit 16. The source gas may be exhausted.

Subsequently, an oxidizing gas is supplied from the gas supply unit 14 into the film forming chamber 48 in the horizontal direction for about 1 second. At the same time, high frequency power of about 1500 W is supplied from the high frequency power supply unit 34 to each antenna body 39. As a result, an oxidizing gas is introduced in the vicinity of the lower surface of the housing member 41 in which the plurality of antenna main bodies 39 are housed, plasma generated by the oxidizing gas is generated, and the raw material gas adsorbed on the surface of the substrate 42 is oxidized to form the SiO ₂ film. Is formed.

  Thereafter, the supply of oxidizing gas and the supply of high-frequency power to the antenna body 39 (ie, generation of plasma) are stopped, and excess oxidizing gas and reaction products that do not contribute to oxidation are about Exhaust horizontally for 1 second. At this time, while the purge gas is supplied from the gas supply unit 14 into the film forming chamber 48 through the supply pipe 19 and the supply hole 21, the oxidizing gas supplied into the film forming chamber 48 is exhausted by the exhaust unit 16. May be.

As described above, the SiO ₂ film is formed on the substrate 42 in units of atomic layers by a series of steps including supply of source gas → exhaust of excess source gas → supply of oxidizing gas → exhaust of excess oxidizing gas. By repeating this process several times, a SiO ₂ film having a predetermined thickness is formed on the substrate 42.

  Note that the film formed in the present invention is not limited at all. The source gas should be appropriately determined according to the film to be formed. In addition, when forming a film on a substrate, the pressure, temperature, processing time, gas flow rate, etc. in the film formation container should be appropriately determined according to the type of film to be formed, the dimensions of the film formation container and the substrate The present invention is not limited to the above embodiment.

  When an oxide film is formed on the substrate, an oxidizing gas containing O is used as one of the reactive gases, and when a nitride film is formed, a nitriding gas containing N is used as one of the reactive gases. When forming an oxide film, the source gas is a reaction gas mainly containing an element other than O among elements constituting the oxide film to be formed. In addition, when forming a nitride film, the source gas is a reaction gas mainly composed of an element other than N among elements constituting the nitride film to be formed.

  Although the number of antenna bodies is not limited, it is desirable to arrange the feeding positions between adjacent antenna bodies so that the feeding positions are opposite to each other in consideration of the uniformity of the generated plasma. There are no particular restrictions on the arrangement and dimensions of the antenna body. In the ALD apparatus of the present invention, the elevating mechanism 44 and the vacuum chamber 50 are not essential components.

The present invention is basically as described above.
Although the atomic layer growth apparatus of the present invention has been described in detail above, the present invention is not limited to the above-described embodiment, and various modifications and changes may be made without departing from the spirit of the present invention. It is.

It is the schematic of one Embodiment showing the structure of the atomic layer growth apparatus of this invention. FIG. 2 is a schematic plan view showing the configuration of the antenna array shown in FIG. 1. It is the schematic of an example showing the structure of the conventional atomic layer growth apparatus. FIG. 4 is a schematic plan view showing the configuration of the antenna array shown in FIG. 3.

Explanation of symbols

10,70 Atomic layer growth equipment (ALD equipment)
DESCRIPTION OF SYMBOLS 12 Deposition container 14 Gas supply part 16, 17 Exhaust part 18a, 18b Supply pipe 20a, 20b Supply hole 22, 23 Exhaust pipe 24, 25 Exhaust hole 26 Antenna element 28 Antenna array 30 Heater 32 Substrate stage 34 High frequency electric power supply part 36 Distributor 38 Impedance matching device 39 Antenna body 40 Cylindrical member 41 Storage member 42 Substrate for deposition (substrate)
44 Elevating mechanism 46 Heater stopper 48 Deposition chamber 50 Vacuum chamber 51 Gap 52 Support member

Claims (4)

An atomic layer growth apparatus that generates an oxide film on a substrate by generating plasma using an oxidizing gas,
A film forming container to which a source gas and an oxidizing gas are supplied, an antenna array in which a plurality of rod-shaped antenna bodies for generating plasma in the film forming container are arranged in parallel, and the substrate are mounted. A substrate stage,
The antenna array is disposed between the upper wall of the film forming container and the substrate stage in parallel with the substrate stage, and the plurality of antenna bodies have a surface on the substrate stage side facing the substrate stage. Is housed in a housing member made of a dielectric formed in parallel with the substrate, and is configured as an integral type. The housing member opens the space below the sheath thickness from the upper wall and side wall of the film forming container, and forms the film. An atomic layer growth apparatus, wherein the atomic layer growth apparatus is disposed so as not to contact a wall surface of a container . An atomic layer growth apparatus for generating a nitride film on a substrate by generating plasma using a nitriding gas,
A film forming container to which a source gas and a nitriding gas are supplied, an antenna array in which a plurality of rod-shaped antenna bodies for generating plasma in the film forming container are arranged in parallel, and the substrate are mounted. A substrate stage,
The antenna array is disposed between the upper wall of the film forming container and the substrate stage in parallel with the substrate stage, and the plurality of antenna bodies have a surface on the substrate stage side facing the substrate stage. Is housed in a housing member made of a dielectric formed in parallel with the substrate, and is configured as an integral type. The housing member opens the space below the sheath thickness from the upper wall and side wall of the film forming container, and forms the film. An atomic layer growth apparatus, wherein the atomic layer growth apparatus is disposed so as not to contact a wall surface of a container . The antenna body, atomic layer deposition apparatus according to claim 1 or 2, characterized in that the thermal expansion coefficient is formed in substantially the same material as the housing member. 4. The atomic layer growth apparatus according to claim 3 , wherein the material of the housing member is quartz, and the material of the antenna body is one of Invar alloy, super invar, and stainless invar.

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