JP2010242180A - Substrate processor and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To increase film quality of a metallic thin film by suppressing a halogen element from remaining in the metallic thin film. <P>SOLUTION: A first step where the halogen-containing gas is supplied from a gas supply part to the inside of a processing chamber, and the halogen-containing gas supplied to the inside of the processing chamber is turned to a plasma sate by a plasma generation part, a member to be etched by halogen-containing gas turned into the plasma state is etched, and the inside of the processing chamber is evacuated by an evacuating part after depositing a reaction product generated by etching, on a substrate, and a second step where the hydrogen gas is supplied from the gas supply part to the inside of the processing chamber, and the hydrogen gas supplied to the inside of the processing chamber is turned into the plasma state by the plasma generation part, and the inside of the processing chamber is evacuated by the evacuating part after supplying the hydrogen gas turned into the plasma state onto the substrate to process the substrate are performed as one cycle, and the cycle is repeated. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for forming a metal thin film on a substrate and a method for manufacturing a semiconductor device.

  As a process of manufacturing a semiconductor device such as a DRAM, a halogen-containing gas is supplied into a processing chamber containing a substrate to form a plasma state, and a metal member provided in the processing chamber is etched by the halogen-containing gas in a plasma state. Then, the metal halide (precursor) generated by the etching is adsorbed on the substrate, and the metal halide adsorbed on the substrate reacts with the halogen-containing gas in a plasma state to cause the metal on the substrate. A substrate processing step of depositing and forming a metal thin film on the substrate has been performed (see, for example, Non-Patent Document 1).

N. Oyama, Y. Ogura, Y. Mitake, Y. Tomita, H. Sakamoto, S. Nagase, M. Watanabe, N. Fujiwara, S. Ohshima, and F. Hirose, Jpn. J. Appl. Phys., 46 (2007) pp.L506-L508

The above-described substrate processing process proceeds as follows. In the following description, chlorine gas (Cl ₂ ) is used as the halogen-containing gas, and copper (Cu) is used as the constituent material of the metal member.

Cl ₂ → 2Cl ^* ·· Formula (1)
Cu + Cl ^* → CuCl (gas) ・ ・ Formula (2)
CuCl (gas) → CuCl (adsorption) ・ ・ Formula (3)
CuCl (adsorption) + Cl ^* → Cu (solid) + Cl ₂ (gas) ↑ ・ ・ Formula (4)

Expression (1) shows that chlorine gas supplied into the processing chamber is in a plasma state, whereby chlorine is decomposed and radicals (Cl ^* ) are generated. In formula (2), a metal member made of copper (Cu) provided in the processing chamber is etched by radicals (Cl ^* ) contained in chlorine gas in a plasma state, and copper chloride (CuCl) as a metal halide is etched. ) The gas is generated in the processing chamber. Formula (3) shows how the copper chloride gas as the metal halide is adsorbed on the substrate. In the formula (4), copper chloride adsorbed on the substrate reacts with radicals in chlorine gas in a plasma state, whereby copper (Cu) is deposited on the substrate and chlorine (Cl) is The state of desorption from the substrate as chlorine gas (Cl ₂ ) is shown.

  However, in the above-described substrate processing step, the chlorine elimination reaction shown in Formula (4) does not proceed sufficiently, chlorine (Cl) as a halogen element remains in the formed metal thin film, and the film quality of the metal thin film is In some cases, it worsened.

  It is an object of the present invention to provide a substrate processing apparatus and a semiconductor device manufacturing method capable of suppressing the residual halogen element in the metal thin film and improving the film quality of the metal thin film.

According to one embodiment of the present invention, a processing chamber for processing a substrate, a gas supply unit that supplies a halogen-containing gas and a hydrogen gas into the processing chamber, and plasma generation in which the gas supplied into the processing chamber is in a plasma state And a control unit that controls the gas supply unit and the plasma generation unit, wherein the control unit includes the halogen The gas to be etched is supplied from the gas supply unit into the processing chamber, the halogen-containing gas supplied into the processing chamber is changed to a plasma state by the plasma generation unit, and the halogen-containing gas in the plasma state causes the member to be etched. And the reaction product produced by the etching is deposited on the substrate, and then the processing chamber is exhausted by the exhaust unit. And the hydrogen gas supplied from the gas supply unit into the processing chamber, the hydrogen gas supplied into the processing chamber is changed into a plasma state by the plasma generation unit, and the hydrogen in the plasma state is supplied. A substrate processing apparatus is provided that repeats this cycle by supplying a second step of exhausting the processing chamber by the exhaust unit after supplying the gas onto the substrate and processing the substrate.

  According to another aspect of the present invention, the halogen-containing gas is supplied from the gas supply unit into the processing chamber, and the halogen-containing gas supplied into the processing chamber is changed to a plasma state by the plasma generation unit, and the plasma state is set. A first step of etching a member to be etched provided in the processing chamber with a halogen-containing gas, depositing a reaction product generated by the etching on the substrate, and then exhausting the processing chamber by an exhaust unit; Hydrogen gas is supplied into the processing chamber from the gas supply unit, the hydrogen gas supplied into the processing chamber is changed into a plasma state by the plasma generation unit, and the chlorine gas or the hydrogen gas in the plasma state is supplied into the plasma chamber. A second step of exhausting the processing chamber by the exhaust unit after supplying the substrate onto the substrate and processing the substrate; The method of manufacturing a semiconductor device and repeating this cycle is provided as a cycle.

  According to the substrate processing apparatus and the semiconductor device manufacturing method of the present invention, it is possible to suppress the halogen element from remaining in the metal thin film and improve the film quality of the metal thin film.

It is side surface sectional drawing of the substrate processing apparatus which concerns on the 1st and 2nd embodiment of this invention. It is side surface sectional drawing of the substrate processing apparatus which concerns on the 3rd Embodiment of this invention. It is side surface sectional drawing which shows a mode that the substrate processing apparatus which concerns on the 3rd Embodiment of this invention rotates a board | substrate. It is a top view of the board | substrate rotated by the substrate processing apparatus which concerns on the 3rd Embodiment of this invention. It is side surface sectional drawing of the substrate processing apparatus which concerns on the 4th Embodiment of this invention. It is side surface sectional drawing of the substrate processing apparatus which concerns on the 5th Embodiment of this invention. It is a timing diagram which shows the gas supply sequence of the substrate processing process which concerns on the 1st Embodiment of this invention. It is a timing diagram which shows the gas supply sequence of the substrate processing process which concerns on the 2nd Embodiment of this invention. It is a table | surface figure which shows the combination of a high frequency electric power source.

<First Embodiment of the Present Invention>
The first embodiment of the present invention will be described below.

(1) Configuration of Substrate Processing Apparatus First, the configuration of a substrate processing apparatus according to the present embodiment will be described with reference to FIG. FIG. 1 is a side sectional view of the substrate processing apparatus according to the present embodiment.

(Processing room)
The substrate processing apparatus according to this embodiment includes a processing container 3 configured as a sealed container. A processing chamber 1 for accommodating a wafer 5 as a substrate is configured inside the processing container 3. The processing container 3 is made of a metal material such as SUS, for example. The processing container 3 is grounded (earthed). A wafer transfer port 20a and a gate valve 20 for opening and closing the wafer transfer port 20a are provided on the side wall of the processing container 3. In addition, a plurality of wafer support pins 14 configured to be movable up and down while ensuring airtightness in the processing container 3 by the bellows 31 are provided in the processing container 3. The wafer 5 is transferred into and out of the processing chamber 1 by the cooperation of the opening / closing operation of the gate valve 20, the transfer operation of the wafer 5 by a transfer device (not shown), and the raising / lowering operation of the wafer support pins 14. .

(Upper electrode, lower electrode, and power supply unit)
In the processing chamber 1, an upper electrode 34 and a lower electrode 35 are respectively provided on the upper and lower sides of the wafer 5 accommodated in the processing chamber 1. The lower surface of the upper electrode 34 and the upper surface of the lower electrode 35 face each other substantially in parallel, and are configured to sandwich the wafer 5 from above and below. In the substrate processing, the wafer 5 is configured to be placed on the upper surface of the lower electrode 35. The wafer 5 may be configured to be placed on a susceptor (not shown) made of a non-metallic material such as quartz (SiO ₂ ) provided on the lower electrode 35.

  The upper electrode 34 is fixed to the upper part in the processing container 3 by an upper insulating member 44. The upper electrode 34 is electrically insulated from the processing container 3 by the upper insulating member 44. The upper part of the upper electrode 34 penetrates the ceiling wall of the processing container 3. A secondary side terminal (output terminal) of an upper oscillator 25 for supplying high frequency power is connected to an upper end portion of the upper electrode 34 protruding above the processing container 3 via an upper matching unit 24 configured as an impedance adjuster. It is connected. The primary side terminal of the upper oscillator 25 is grounded.

  The lower electrode 35 is fixed to the lower part in the processing container 3 by a lower insulating member 45. The lower electrode 35 is electrically insulated from the processing container 3 by the lower insulating member 45. The lower part of the lower electrode 35 penetrates the bottom wall of the processing container 3. A secondary terminal of a lower oscillator 37 for supplying high frequency power is connected to a lower end portion of the lower electrode 35 protruding downward from the processing container 3 via a lower matching unit 36 configured as an impedance adjuster. . The primary terminal of the lower oscillator 37 is grounded.

  By supplying high frequency power from the upper oscillator 25 to the upper electrode 34 in a state where a mixed gas (halogen-containing gas) of chlorine gas and helium gas is supplied into the processing chamber 1 by a gas supply unit described later, chlorine gas A gas mixture of helium gas and helium gas is configured to be in a plasma state (indicated by reference numeral 2 in the figure). At this time, by supplying high frequency power from the lower oscillator 37 to the lower electrode 35, the density of plasma generated in the processing chamber 1 can be adjusted, and the movement distance of radicals contained in the plasma can be controlled. It is configured. Further, by supplying high-frequency power from the lower oscillator 37 to the lower electrode 35 in a state where a mixed gas of hydrogen gas and helium gas is supplied into the processing chamber 1 by a gas supply unit described later, hydrogen gas and helium gas are supplied. The mixed gas can be in a plasma state. Further, by supplying high-frequency power from the lower oscillator 37 to the lower electrode 35 in a state where a mixed gas of chlorine gas and argon gas is supplied into the processing chamber 1 by a gas supply unit to be described later, chlorine gas and argon gas are supplied. The mixed gas can be in a plasma state.

  The frequency of the high frequency power supplied to the upper electrode 34 and the lower electrode 35 is configured to be appropriately selected from a range of, for example, 13.56 [MHz] to 400 [KHz]. A combination of frequencies of the high-frequency power source is illustrated in FIG.

  The power supply unit according to this embodiment is mainly configured by the upper matching unit 24, the lower matching unit 36, the upper oscillator 25, and the lower oscillator 37. Further, the upper matching unit 24, the lower matching unit 36, the upper oscillator 25, the lower oscillator 37, the upper electrode 34, and the lower electrode 35 constitute a plasma generation unit according to the present embodiment.

(heater)
An upper electrode heater 6 and a lower electrode heater 8 configured as a resistance heater or the like are provided in the upper electrode 34 and the lower electrode 35. By adjusting the energization amount to the upper electrode heater 6 and the lower electrode heater 8, the temperature of the wafer 5 carried into the processing chamber 1, the lower electrode 35 in the upper electrode 34, the metal member 12 to be described later, and the like can be adjusted. It is configured as follows. The upper electrode heater 6 and the lower electrode heater 8 mainly constitute the heating unit according to this embodiment.

(Gas supply part)
A gas supply path 15 is provided in the upper electrode 34 along the vertical direction. The downstream end of the gas supply path 15 opens to the lower surface of the upper electrode 34. Connected to the upstream end of the gas supply path 15 is a downstream end of a gas supply pipe 100 that supplies various gases such as halogen-containing gas, rare gas, and hydrogen gas into the processing chamber 1.

The gas supply pipe 100 is connected to downstream ends of a chlorine gas supply pipe 110, a hydrogen gas supply pipe 120, a helium gas supply pipe 130, and an argon gas supply pipe 140, respectively. The chlorine gas supply pipe 110 is provided with a chlorine gas supply source 111 for supplying chlorine (Cl ₂ ) gas, a flow rate control device 112, and an opening / closing valve 113 in order from the upstream side. The hydrogen gas supply pipe 120 is provided with a hydrogen gas supply source 121 for supplying hydrogen (H ₂ ) gas, a flow rate control device 122, and an opening / closing valve 123 in order from the upstream side. The helium gas supply pipe 130 is provided with a helium gas supply source 131 for supplying helium (He) gas, a flow rate control device 132, and an opening / closing valve 133 in order from the upstream side. The argon gas supply pipe 140 is provided with an argon gas supply source 141 for supplying argon (Ar) gas, a flow rate controller 142, and an opening / closing valve 143 in order from the upstream side. By opening the on-off valves 113 and 133 while controlling the flow rate with the flow rate control devices 112 and 132, a mixed gas of chlorine gas and helium gas as a halogen-containing gas is supplied into the processing chamber 1. Yes. Further, a mixture gas of hydrogen gas and argon gas is supplied into the processing chamber 1 by opening the on-off valves 123 and 143 while controlling the flow rate by the flow rate control devices 112 and 142.

  Mainly, gas supply path 15, gas supply pipe 100, chlorine gas supply pipe 110, hydrogen gas supply pipe 120, helium gas supply pipe 130, argon gas supply pipe 140, chlorine gas supply source 111, hydrogen gas supply source 121, helium A gas supply unit according to the present embodiment is configured by the gas supply source 131, the argon gas supply source 141, the flow rate control devices 112, 122, 132, 142, and the opening / closing valves 113, 123, 133, 143.

(Metal member)
Between the upper electrode 34 and the wafer 5, the metal member 12 as a member to be etched is provided. That is, the positional relationship is set such that the gas supply unit faces the wafer 5 through the metal member 21. The metal member 12 is attached to the lower surface of the upper electrode 34. The metal member 12 is made of a metal material that is a raw material for the metal thin film formed on the wafer 5, such as copper (Cu). The metal member 12 is provided with a plurality of gas ejection ports 22. The gas supplied from the gas supply path 15 into the processing chamber 1 is dispersed in a buffer space formed between the upper electrode 34 and the metal member 12, and has a substantially uniform flow rate from the gas jet port 22 toward the wafer 5. It is comprised so that it may be supplied with.

While supplying a mixed gas (halogen-containing gas) of chlorine gas and helium gas into the processing chamber 1 through the gas supply path 15 described above, high-frequency power is supplied to the upper electrode 34 by the power supply unit described above, and the halogen-containing gas is supplied. Is in a plasma state, the metal member 12 is etched by the halogen-containing gas in the plasma state and radicals (Cl ^* ) contained in the gas, and, for example, copper chloride (CuCl) gas as a metal halide is contained in the processing chamber 1. It is configured to be generated. The metal halide generated by the etching is configured to be adsorbed and deposited on the wafer 5.

(Exhaust part)
An exhaust port 39 is provided on the side of the processing container 3. An upstream end of an exhaust pipe 41 is connected to the exhaust port 39. A pressure gauge, a variable conductance valve 11, and a vacuum pump 7 (not shown) are connected to the exhaust pipe 41 in order from the upstream side. The pressure in the processing chamber 1 can be adjusted by operating the vacuum pump 7 and adjusting the opening of the variable conductance valve 11. The exhaust part according to this embodiment is mainly configured by the exhaust port 39, a pressure gauge (not shown), the variable conductance valve 11, and the vacuum pump 7.

(controller)
Flow control devices 112, 122, 132, 142, open / close valves 113, 123, 133, 143, upper electrode heater 6, lower electrode heater 8, upper matcher 24, lower matcher 36, upper oscillator 25, lower oscillator 37, pressure The meter (not shown), the variable conductance valve 11, the gate valve 20, and the wafer support pin 14 are connected to a controller 280 as a control unit. The controller 280 controls the flow rate of the flow rate control devices 112, 122, 132, 142, opens / closes the on-off valves 113, 123, 133, 143, energizes the upper electrode heater 6 and the lower electrode heater 8, and the upper matching unit 24. In addition, the impedance adjustment of the lower matching unit 36, the high frequency power supply operation of the upper oscillator 25 and the lower oscillator 37, the opening adjustment operation of the variable conductance valve 11, the opening / closing operation of the gate valve 20, and the raising / lowering operation of the wafer support pin 14 are controlled. It is configured.

(2) Substrate Processing Step Next, the substrate processing step according to the present embodiment performed by the above-described substrate processing apparatus will be described with reference to FIGS. The substrate processing process according to the present embodiment includes a film forming process (S30) as a first step of forming a metal thin film on the substrate, and a hydrogen gas in a plasma state is supplied to the formed metal thin film to form a metal thin film. The reduction process (S31) as the second step of reducing the halogen element contained therein is set as one cycle, and this cycle is repeated. FIG. 7 is a timing chart showing a gas supply sequence in the substrate processing process according to this embodiment. In the following description, the operation of each part of the substrate processing apparatus described above is controlled by the controller 280.

(Wafer carry-in process (S10))
First, the gate valve 20 is opened with the wafer support pins 14 raised, and the wafer 5 is loaded into the processing container 3 by a transfer device (not shown) and placed on the wafer support pins 14. Then, the wafer support pins 14 are lowered to place the wafer 5 on the upper surface of the lower electrode 35, and the gate valve 20 is closed.

(Decompression / Temperature raising step (S20))
Next, the vacuum pump 7 is operated, the opening of the variable conductance valve 11 is adjusted, and control is performed so that the inside of the processing chamber 1 becomes a predetermined pressure (film formation pressure). Further, the upper electrode heater 6 and the lower electrode heater 8 are heated, and the upper electrode 34, the lower electrode 35, the metal member 12, and the wafer 5 are controlled to have predetermined temperatures (film formation temperatures).

(Film formation process (S30))
Next, the supply of the mixed gas of chlorine gas and helium gas as the halogen-containing gas into the processing chamber 1 is started by opening the opening and closing valves 113 and 133 while controlling the flow rate with the flow rate control devices 112 and 132. . A mixed gas of chlorine gas and helium gas supplied into the processing chamber 1 from the gas supply unit is dispersed in a buffer space formed between the upper electrode 34 and the metal member 12, and each gas is directed toward the wafer 5. Each is supplied from the jet port 22 at a substantially uniform flow rate.

While supplying a mixed gas of chlorine gas and helium gas into the processing chamber 1, high-frequency power is supplied from the upper oscillator 25 to the upper electrode 34 to bring the mixed gas into a plasma state. As a result, the mixed gas in a plasma state and radicals (Cl ^* ) contained in the gas etch the metal member 12, and, for example, copper chloride (CuCl) gas as a metal halide (reaction product, precursor) is produced. Generated. Copper chloride (CuCl) gas generated by etching is adsorbed and deposited on the wafer 5.

Simultaneously with the supply of the high frequency power to the upper electrode 34, the high frequency power is supplied from the lower oscillator 37 to the lower electrode 35 to adjust the density of the plasma generated in the processing chamber 1, and the plasma is included in the mixed gas in the plasma state. The movement of radicals (Cl ^* ) to the wafer 5 side is promoted. As a result, the reaction between the above-described radical (Cl ^* ) and copper chloride (CuCl) adsorbed on the wafer 5 is promoted, and the decomposition of copper chloride (CuCl) is promoted. Copper (Cu) is deposited on the wafer 5 to form a metal thin film containing Cu as a main component. Note that chlorine (Cl) is dissociated from the metal thin film as chlorine gas (Cl ₂ ).

  When a metal thin film having a desired film thickness is formed after a predetermined time has elapsed, power supply to the upper electrode 34 and the lower electrode 35 is stopped, and the on-off valves 113 and 133 are closed. Thereafter, residual gas and reaction products in the processing chamber 1 are exhausted.

In addition, as conditions in the film-forming process (S30) which concerns on this embodiment, for example,
Flow rate of mixed gas of chlorine gas and helium gas: 2 slm,
Pressure in the processing chamber 1: 50 Pa,
Upper electrode 34 temperature: 500 ° C.
The temperature of the lower electrode 35: 350 ° C.
High frequency power supplied to the upper electrode 34: 1000 W (13.56 MHz),
High frequency power supplied to the lower electrode 35: 200 W (13.56 MHz)
Is exemplified.

(Reduction process (S31))
The supply of the mixed gas of hydrogen gas and helium gas into the processing chamber 1 is started by opening the on-off valves 123 and 133 while controlling the flow rate with the flow rate control devices 122 and 132. A mixed gas of hydrogen gas and helium gas supplied into the processing chamber 1 from the gas supply unit is dispersed in a buffer space formed between the upper electrode 34 and the metal member 12, and each gas is directed toward the wafer 5. Each is supplied from the jet port 22 at a substantially uniform flow rate.

While supplying a mixed gas of hydrogen gas and helium gas into the processing chamber 1, high-frequency power is supplied from the lower oscillator 37 to the lower electrode 35 to bring the mixed gas into a plasma state. As a result, radicals (H ^* ) contained in the mixed gas in the plasma state reduce Cl contained in the metal thin film.

When the reduction of Cl of the metal thin film is completed after a predetermined time has elapsed, the power supply to the lower electrode 35 is stopped, and the open / close valves 123 and 133 are closed to mix hydrogen gas and helium gas into the processing chamber 1. Stop supplying gas. Thereafter, residual gas and reaction products in the processing chamber 1 are exhausted.

In addition, as conditions in the reduction | restoration process (S31) which concerns on this embodiment, for example,
Flow rate of mixed gas of hydrogen gas and helium gas: 1 slm,
Pressure in the processing chamber 1: 30 Pa,
Upper electrode 34 temperature: 500 ° C.
The temperature of the lower electrode 35: 350 ° C.
High frequency power supplied to the upper electrode 34: 0 W,
High frequency power supplied to the lower electrode 35: 1000 W (13.56 MHz),
Processing time: 20 seconds is exemplified.

(Repeated process)
Thereafter, the film formation step (S30) and the reduction step (S31) are set as one cycle, and this cycle is repeated a predetermined number of times to form a metal thin film having a desired film thickness.

(Wafer unloading step (S40))
Then, while supplying an inert gas such as N ₂ gas into the processing chamber 1 from an inert gas supply means (not shown), the opening of the variable conductance valve 11 is adjusted to return the processing chamber 1 to atmospheric pressure. Then, the wafer 5 on which the film has been formed is carried out from the processing chamber 1 by reversing the above-described steps.

(3) Effects according to the present embodiment According to the present embodiment, the following one or more effects are achieved.

According to the present embodiment, the above-described film forming step (S30) and a reducing step (reducing halogen elements contained in the metal thin film by supplying hydrogen gas in a plasma state to the metal thin film formed on the wafer 5). This cycle is repeated with S31) as one cycle. In the reduction step (S31), radicals (H ^* ) contained in the mixed gas in a plasma state reduce chlorine (Cl) contained in the metal thin film, so that chlorine remains in the metal thin film. Further, it can be suppressed and the film quality of the metal thin film can be improved.

  In addition, according to the present embodiment, the reduction process is not performed collectively after the film formation, but the film formation process is divided into a plurality of cycles, and the reduction process is performed for each cycle. By comprising in this way, it becomes possible to perform the reduction | restoration of chlorine (Cl) contained in a metal thin film more reliably.

  In the reduction step (S31) for reducing the halogen element according to this embodiment, high-frequency power is supplied to the lower electrode 35 instead of the upper electrode 34, and the mixed gas of hydrogen gas and helium gas is brought into a plasma state. In this way, damage to the metal member 12 can be reduced by supplying high-frequency power to the lower electrode 35 that is relatively far from the metal member 12 instead of the upper electrode 34.

Further, in the reduction step (S31) for reducing the halogen element according to this embodiment, the hydrogen gas is not supplied alone into the processing chamber 1, but a mixed gas of hydrogen gas and helium gas is supplied to form a plasma state. It is said. Thus, by adding helium gas to hydrogen gas, the lifetime of radical (H ^* ) can be increased, the efficiency of reduction treatment can be improved, and the film quality of the metal thin film can be further improved.

Further, according to the present embodiment, simultaneously with the supply of the high frequency power to the upper electrode 34, the high frequency power is supplied from the lower oscillator 37 to the lower electrode 35 to adjust the density of the plasma generated in the processing chamber 1. As a result, the movement of radicals (Cl ^* ) contained in the mixed gas in the plasma state to the wafer 5 side can be promoted, and the above-mentioned radicals (Cl ^* ) and copper chloride (CuCl) adsorbed on the wafer 5 can be promoted. And the decomposition of copper chloride (CuCl) can be promoted. Thereby, the film-forming speed | rate of a metal thin film can be increased. Moreover, the residual of chlorine (Cl) in the metal thin film can be suppressed, and the film quality of the metal thin film can be further improved.

  Further, according to the present embodiment, the metal member 12 as the member to be etched is provided between the upper electrode 34 and the wafer 5. That is, the region where the metal halide (reaction product, precursor) is generated and the wafer 5 are arranged close to each other. Thereby, the metal halide can be efficiently supplied to the wafer 5. Even when a groove structure or a step structure is formed on the surface of the wafer 5, a metal thin film having a uniform thickness can be formed inside the groove or on the side surface of the step. Further, it is possible to suppress the metal halide from adsorbing to the inner wall or the like of the processing chamber 1 without adsorbing to the wafer 5, and the frequency of cleaning in the processing container 3 can be reduced.

Further, according to the present embodiment, the chlorine gas is not supplied into the processing chamber 1 alone, but a mixed gas of chlorine gas and helium gas is supplied to form a plasma state. Thus, by adding helium gas to chlorine gas, the lifetime of the radical (Cl ^* ) can be increased, the efficiency of the film forming process can be improved, and the film quality of the metal thin film can be improved.

<Second Embodiment of the Present Invention>
The substrate processing step according to the present embodiment is different from the first embodiment in that a shaping step (S32) as a third step of shaping the surface of the formed metal thin film by etching is further performed. The shaping step (S32) as the third step is performed every time this cycle is performed with the film forming step (S30) as the first step and the reduction step (S31) as the second step as one cycle. Alternatively, it is performed every time this cycle is performed a predetermined number of times. Others are the same as the above-mentioned embodiment.

  Hereinafter, the substrate processing process according to the present embodiment will be described with reference to FIG. FIG. 8 is a timing chart showing a gas supply sequence in the substrate processing process according to this embodiment. In FIG. 8, the case where the shaping process (S32) which etches and shapes the surface of a metal thin film is performed for every several cycles is illustrated. In the following description, the operation of each part of the substrate processing apparatus described above is controlled by the controller 280.

(Wafer carry-in process (S10))
First, the gate valve 20 is opened with the wafer support pins 14 raised, and the wafer 5 is loaded into the processing container 3 by a transfer device (not shown) and placed on the wafer support pins 14. Then, the wafer support pins 14 are lowered to place the wafer 5 on the upper surface of the lower electrode 35, and the gate valve 20 is closed.

(Decompression / Temperature raising step (S20))
Next, the vacuum pump 7 is operated, the opening of the variable conductance valve 11 is adjusted, and control is performed so that the inside of the processing chamber 1 becomes a predetermined pressure (film formation pressure). Further, the upper electrode heater 6 and the lower electrode heater 8 are heated, and the upper electrode 34, the lower electrode 35, the metal member 12, and the wafer 5 are controlled to have predetermined temperatures (film formation temperatures).

(Film formation process (S30))
Supplying a mixed gas of chlorine gas and helium gas as a halogen-containing gas into the processing chamber 1 is started by opening the opening and closing valves 113 and 133 while controlling the flow rate with the flow rate control devices 112 and 132. A mixed gas of chlorine gas and helium gas supplied into the processing chamber 1 from the gas supply unit is dispersed in a buffer space formed between the upper electrode 34 and the metal member 12, and each gas is directed toward the wafer 5. Each is supplied from the jet port 22 at a substantially uniform flow rate.

While supplying a mixed gas of chlorine gas and helium gas into the processing chamber 1, high-frequency power is supplied from the upper oscillator 25 to the upper electrode 34 to bring the mixed gas into a plasma state. As a result, the mixed gas in a plasma state and radicals (Cl ^* ) contained in the gas etch the metal member 12, and, for example, copper chloride (CuCl) gas as a metal halide (reaction product, precursor) is produced. Generated. Copper chloride (CuCl) gas generated by etching is adsorbed and deposited on the wafer 5.

Simultaneously with the supply of the high frequency power to the upper electrode 34, the high frequency power is supplied from the lower oscillator 37 to the lower electrode 35 to adjust the density of the plasma generated in the processing chamber 1, and the plasma is included in the mixed gas in the plasma state. The movement of radicals (Cl ^* ) to the wafer 5 side is promoted. As a result, the reaction between the above-described radical (Cl ^* ) and copper chloride (CuCl) adsorbed on the wafer 5 is promoted, and the decomposition of copper chloride (CuCl) is promoted. Copper (Cu) is deposited on the wafer 5 to form a metal thin film containing Cu as a main component. Note that chlorine (Cl) dissociates from the metal thin film as chlorine gas (Cl ₂ ).

  When a metal thin film having a desired film thickness is formed after a predetermined time has elapsed, power supply to the upper electrode 34 and the lower electrode 35 is stopped, and the open / close valves 113 and 133 are closed to supply chlorine gas into the processing chamber 1. The supply of the mixed gas of helium gas is stopped. Thereafter, residual gas and reaction products in the processing chamber 1 are exhausted.

In addition, as conditions in the film-forming process (S30) which concerns on this embodiment, for example,
Flow rate of mixed gas of chlorine gas and helium gas: 2 slm,
Pressure in the processing chamber 1: 50 Pa,
Upper electrode 34 temperature: 500 ° C.
The temperature of the lower electrode 35: 350 ° C.
High frequency power supplied to the upper electrode 34: 1000 W (13.56 MHz),
High frequency power supplied to the lower electrode 35: 200 W (13.56 MHz),
Processing time: 10 seconds is exemplified.

(Reduction process (S31))
The supply of the mixed gas of hydrogen gas and helium gas into the processing chamber 1 is started by opening the on-off valves 123 and 133 while controlling the flow rate with the flow rate control devices 122 and 132. A mixed gas of hydrogen gas and helium gas supplied into the processing chamber 1 from the gas supply unit is dispersed in a buffer space formed between the upper electrode 34 and the metal member 12, and each gas is directed toward the wafer 5. Each is supplied from the jet port 22 at a substantially uniform flow rate.

While supplying a mixed gas of hydrogen gas and helium gas into the processing chamber 1, high-frequency power is supplied from the lower oscillator 37 to the lower electrode 35 to bring the mixed gas into a plasma state. As a result, radicals (H ^* ) contained in the mixed gas in a plasma state reduce Cl contained in the metal thin film.

  When the reduction of Cl of the metal thin film is completed after a predetermined time has elapsed, the power supply to the lower electrode 35 is stopped, and the open / close valves 123 and 133 are closed to mix hydrogen gas and helium gas into the processing chamber 1. Stop supplying gas. Thereafter, residual gas and reaction products in the processing chamber 1 are exhausted.

In addition, as conditions in the reduction | restoration process (S31) which concerns on this embodiment, for example,
Flow rate of mixed gas of hydrogen gas and helium gas: 1 slm,
Pressure in the processing chamber 1: 30 Pa,
Upper electrode 34 temperature: 500 ° C.
The temperature of the lower electrode 35: 350 ° C.
High frequency power supplied to the upper electrode 34: 0 W,
High frequency power supplied to the lower electrode 35: 1000 W (13.56 MHz),
Processing time: 20 seconds is exemplified.

(Repeated process)
Thereafter, the film formation step (S30) and the reduction step (S31) are set as one cycle, and this cycle is repeated a predetermined number of times to form a metal thin film having a desired film thickness.

(Shaping process (S32))
In addition, the shaping process (S32) which etches and shapes the surface of a metal thin film is implemented for every above-mentioned cycle or every several cycles. The step (S32) is performed, for example, between the film formation step (S30) and the reduction step (S31).

  Specifically, the supply of the mixed gas of chlorine gas and argon gas into the processing chamber 1 is started by opening the on-off valves 113 and 143 while controlling the flow rate with the flow rate control devices 112 and 142. A mixed gas of chlorine gas and argon gas supplied into the processing chamber 1 from the gas supply unit is dispersed in a buffer space formed between the upper electrode 34 and the metal member 12, and each gas is directed toward the wafer 5. Each is supplied from the jet port 22 at a substantially uniform flow rate.

While supplying a mixed gas of chlorine gas and argon gas into the processing chamber 1, high-frequency power is supplied from the lower oscillator 37 to the lower electrode 35 to bring the mixed gas into a plasma state. As a result, the surface of the metal thin film is etched and shaped by the mixed gas in a plasma state and radicals (Cl ^* ) contained in the gas.

  When the shaping of the surface of the metal thin film is completed after a predetermined time has elapsed, the power supply to the lower electrode 35 is stopped, and the open / close valves 123 and 133 are closed to mix the chlorine gas and the argon gas into the processing chamber 1. Stop supplying gas. Thereafter, residual gas and reaction products in the processing chamber 1 are exhausted.

In addition, as conditions in the shaping process (S32) concerning this embodiment, for example,
Flow rate of mixed gas of chlorine gas and argon gas: 1 slm,
Pressure in the processing chamber 1: 30 Pa,
Upper electrode 34 temperature: 500 ° C.
The temperature of the lower electrode 35: 350 ° C.
High frequency power supplied to the upper electrode 34: 0 W,
High frequency power supplied to the lower electrode 35: 1000 W (13.56 MHz),
Processing time: 10 seconds is exemplified.

(Wafer unloading step (S40))
When a metal thin film with a desired thickness is formed, the opening of the variable conductance valve 11 is adjusted while supplying an inert gas such as N ₂ gas into the processing chamber 1 from an inert gas supply means (not shown). The inside of the chamber 1 is returned to atmospheric pressure. Then, the film-formed wafer 5 is unloaded from the processing chamber 1 by a procedure reverse to the procedure described above.

(3) Effects according to the present embodiment According to the present embodiment, in addition to the effects described in the above-described embodiments, the following one or more effects are exhibited.

  If a deep groove is formed on the surface of the wafer 5 which is the base for forming the metal thin film, the film forming speed near the upper side wall of the deep groove may be faster than the film forming speed near the bottom of the deep groove depending on the film forming conditions. is there. In such a case, the film thickness in the vicinity of the upper side wall becomes thick and eventually closes, and voids called voids may be formed in the metal thin film covering the groove bottom. On the other hand, according to the present embodiment, the shaping step (S32) for etching and shaping the surface of the formed metal thin film is defined as one cycle of the film forming step (S30) and the reduction step (S31). It is configured to be executed every time it is executed or every time this cycle is executed a predetermined number of times. Thereby, even if the film thickness of the metal thin film near the upper side wall formed per cycle becomes thicker than the film thickness of the metal thin film near the bottom of the deep groove formed per cycle, The surface of the metal thin film can be etched and smoothed every cycle, and generation of voids can be suppressed.

  Further, in the shaping step (S32) for etching and shaping the surface of the metal thin film according to the present embodiment, high frequency power is supplied to the lower electrode 35 instead of the upper electrode 34, and a mixed gas of chlorine gas and argon gas is converted into plasma. State. In this way, damage to the metal member 12 can be reduced by supplying high-frequency power to the lower electrode 35 that is relatively far from the metal member 12 instead of the upper electrode 34.

Further, in the shaping step (S32) for etching and shaping the surface of the metal thin film according to the present embodiment, a chlorine gas and an argon gas mixed gas are not supplied into the processing chamber 1 alone. The plasma is supplied. Thus, by adding argon gas to chlorine gas, the lifetime of radicals (Cl ^* ) can be increased, the efficiency of the shaping process can be improved, and the film quality of the metal thin film can be improved.

<Third Embodiment of the Present Invention>
The substrate processing apparatus according to this embodiment is different from the above-described embodiment in that the wafer 5 carried into the processing chamber 1 is configured to be rotatable.

  As shown in FIGS. 2 and 3, the substrate processing apparatus according to this embodiment is provided on the upper surface of the lower electrode 35 so as to surround the outer periphery of the pedestal 16 and the pedestal 16 configured to be rotatable and movable up and down. And an annular susceptor 29. The pedestal 16 and the susceptor 29 are made of a material having high purity and relatively high thermal conductivity such as silicon carbide (SiC). In the film forming step (S30) described above, the wafer 5 is placed on the pedestal 16 and the susceptor 29 and processed.

As illustrated in FIG. 4, during the film forming step (S30), the pedestal 16 is configured to lift the wafer 5 and rotate the wafer 5 intermittently at an angle within 360 °. FIG. 4 is a top view of the wafer 5 rotated by the substrate processing apparatus according to the present embodiment. In FIG. 4, as can be seen by referring to the position of the notch 4, the wafer 5 is intermittently rotated 90 ° clockwise. Note that the rotation angle and the rotation timing are appropriately determined in consideration of the number of cycles, the thickness of the metal thin film formed per cycle, and the like. For example, when the thickness of the metal thin film to be formed is 100 nm, the film forming step (S30) may be divided into 20 (20 cycles) and rotated every time the thickness of the metal thin film increases by 5 nm. Good. Further, the pedestal 16 is not limited to intermittently rotating the wafer 5, but may be configured to rotate continuously.

  According to the present embodiment, it is possible to reduce the influence of gas flow rate, flow rate, and gas concentration imbalance in the processing chamber 1 and improve the film thickness uniformity of the metal thin film formed on the wafer 5. Further, since the wafer 5 can be moved up and down by the pedestal 16, the above-described wafer support pins 14 are not required, and the configuration of the substrate processing apparatus can be simplified.

<Fourth Embodiment of the Present Invention>
The substrate processing apparatus according to the present embodiment controls the phase difference between the high-frequency power supplied to the upper electrode 34 and the high-frequency power supplied to the lower electrode 35 so that the phase difference becomes a predetermined value. And different.

  FIG. 5 is a side sectional view of the substrate processing apparatus according to the present embodiment. According to FIG. 5, in the substrate processing apparatus according to the present embodiment, the upper oscillator 25 and the lower oscillator 37 are connected to the phase shifter 18, respectively. The phase shifter 18 performs control so that the phase difference between the high-frequency power supplied to the upper electrode 34 and the high-frequency power supplied to the lower electrode 35 becomes a predetermined value when performing the above-described film forming step (S30). It is configured as follows.

  According to the present embodiment, the phase difference between the high frequency power supplied to the upper electrode 34 and the high frequency power supplied to the lower electrode 35 can be controlled to be a predetermined value, and the film thickness of the metal thin film formed on the wafer 5 can be controlled. The uniformity of distribution can be improved.

<Fifth Embodiment of the Present Invention>
The substrate processing apparatus according to this embodiment is different from the above-described embodiment in that the phase difference between the high-frequency power supplied to the upper electrode 34 and the high-frequency power supplied to the lower electrode 35 is controlled to 180 °. .

  FIG. 6 is a side sectional view of the substrate processing apparatus according to the present embodiment. According to FIG. 6, the power supply unit according to the substrate processing apparatus according to the present embodiment is not configured to include the upper matching unit 24, the lower matching unit 36, the upper oscillator 25, and the lower oscillator 37, but to share the high-frequency power. An oscillator 43, a shared matching device 42 configured as an impedance adjuster, and an insulating transformer 26 are provided. The primary side of the shared oscillator 43 is grounded (earthed). The secondary side of the shared oscillator 43 is connected to one terminal of the primary side of the isolation transformer 26 via the shared matching unit 42. The other terminal on the primary side of the insulating transformer 26 is grounded. The terminals on the secondary side of the insulating transformer are connected to the upper electrode 34 and the lower electrode 35, respectively.

  According to this embodiment, the phase difference between the high-frequency power supplied to the upper electrode 34 and the high-frequency power supplied to the lower electrode 35 can be 180 °. Thereby, it is possible to suppress the plasma generated in the film forming step (S30) from diffusing in the processing chamber 1, and to be easily localized between the upper electrode 34 and the lower electrode 35. As a result, the productivity of the metal thin film deposition process can be improved. In addition, adhesion of metal halide to the inner wall of the processing chamber 1 can be suppressed, film formation on the inner wall of the processing chamber 1 can be suppressed, and the maintenance frequency in the processing chamber 1 can be reduced.

<Still another embodiment of the present invention>
As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, Various changes are possible in the range which does not deviate from the summary.

For example, in the above-described embodiment, the substrate processing apparatus including the parallel plate type plasma generation unit in which the upper electrode 34 and the lower electrode 35 are provided in parallel on the upper and lower sides of the wafer 5 has been described. It is not limited to. That is, the present invention can be suitably applied to a substrate processing apparatus including a plasma generation unit such as an inductively coupled type or an ECR plasma type as well as a parallel plate type.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

According to one aspect of the invention,
A processing chamber for processing the substrate;
A gas supply unit for supplying a halogen-containing gas and a hydrogen gas into the processing chamber;
A plasma generating unit that converts the gas supplied into the processing chamber into a plasma state;
An exhaust section for exhausting the processing chamber;
A member to be etched provided in the processing chamber;
A control unit for controlling the gas supply unit and the plasma generation unit,
The controller is
The halogen-containing gas is supplied from the gas supply unit into the processing chamber, the halogen-containing gas supplied into the processing chamber is changed to a plasma state by the plasma generation unit, and the halogen-containing gas in the plasma state is used as the target gas. A first step of etching the etching member, depositing a reaction product generated by etching on the substrate, and then exhausting the processing chamber by the exhaust unit;
The hydrogen gas is supplied from the gas supply unit into the processing chamber, the hydrogen gas supplied into the processing chamber is changed to a plasma state by the plasma generation unit, and the hydrogen gas in the plasma state is supplied onto the substrate. A second step of exhausting the processing chamber by the exhaust unit after processing the substrate;
A substrate processing apparatus that repeats this cycle as one cycle is provided.

Preferably,
The gas supply unit is provided to face the substrate through the metal member.

Also preferably,
The gas supply unit supplies chlorine gas into the processing chamber,
The controller is
The chlorine gas is supplied from the gas supply unit into the processing chamber, the chlorine gas supplied into the processing chamber is changed to a plasma state by the plasma generation unit, and the chlorine gas in a plasma state is supplied onto the substrate. Then, after the substrate is processed, there is provided a substrate processing apparatus that performs the third step of exhausting the processing chamber by the exhaust unit every time the cycle is performed or every time the cycle is performed a predetermined number of times. .

According to yet another aspect of the invention,
A halogen-containing gas is supplied from a gas supply unit into the processing chamber, the halogen-containing gas supplied into the processing chamber is brought into a plasma state by a plasma generation unit, and the halogen-containing gas in the plasma state is provided in the processing chamber. Etching the member to be etched, depositing a reaction product generated by etching on the substrate, and then exhausting the processing chamber by an exhaust unit;
Hydrogen gas is supplied from the gas supply unit into the processing chamber, the hydrogen gas supplied into the processing chamber is changed to a plasma state by the plasma generation unit, and the hydrogen gas in a plasma state is supplied onto the substrate. A second step of exhausting the processing chamber by the exhaust unit after processing the substrate;
A method for manufacturing a semiconductor device is provided in which this cycle is repeated.

Preferably,
Chlorine gas is supplied from the gas supply unit into the processing chamber, the chlorine gas supplied into the processing chamber is changed to a plasma state by the plasma generation unit, and the chlorine gas in the plasma state is supplied onto the substrate. Then, after the substrate is processed, a third step of exhausting the processing chamber by the exhaust unit is performed every time the cycle is performed or each time the cycle is performed a predetermined number of times.

According to yet another aspect of the invention,
A gas supply unit for supplying a halogen-containing gas or hydrogen gas into the processing chamber;
An upper electrode and a lower electrode provided on the upper and lower sides of the substrate;
A power supply unit for supplying high-frequency power to the upper electrode and the lower electrode;
A metal member provided between the upper electrode and the substrate;
An exhaust section for exhausting the processing chamber;
A control unit for controlling the gas supply unit and the plasma generation unit,
The controller is
Supplying the halogen-containing gas into the processing chamber, supplying high-frequency power to the upper electrode to bring the halogen-containing gas into a plasma state, etching the metal member with the halogen-containing gas in a plasma state, and etching The generated metal halide is adsorbed on the substrate, and the halogen-containing gas in a plasma state is moved to the substrate side by supplying high-frequency power to the lower electrode, and the halogen-containing gas in a plasma state is moved to the substrate side. A first step of reacting a gas with the metal halide adsorbed on the substrate to deposit a metal on the substrate and forming a metal thin film on the substrate;
The hydrogen gas is supplied into the processing chamber, the hydrogen gas supplied into the processing chamber is changed to a plasma state by the plasma generation unit, and the hydrogen gas in a plasma state is supplied onto the substrate to A second step of exhausting the processing chamber by the exhaust unit after processing;
A substrate processing apparatus that repeats this cycle as one cycle is provided.

According to yet another aspect of the invention,
A halogen-containing gas is supplied into a processing chamber in which a substrate is accommodated, and high-frequency power is supplied to an upper electrode provided above the substrate to bring the halogen-containing gas into a plasma state. The metal member provided between the upper electrode and the substrate is etched by the method, and the metal halide generated by the etching is adsorbed on the substrate, and the lower electrode provided below the substrate is subjected to high frequency power. The halogen-containing gas in a plasma state is moved to the substrate side, and the halogen-containing gas in a plasma state is reacted with the metal halide adsorbed on the substrate. Depositing a metal thereon and forming a metal thin film on the substrate;
The hydrogen gas is supplied into the processing chamber, the high-frequency power is supplied to the lower electrode, the hydrogen gas supplied into the processing chamber is changed to a plasma state, and the hydrogen gas in the plasma state causes the hydrogen gas to enter the thin metal film. A second step of reducing the contained halogen element;
As a cycle, this cycle is repeated, and a method for manufacturing a semiconductor device is provided.

According to still another aspect of the present invention,
Generated by attaching a metal material to the upper electrode side of the parallel plate electrode composed of the upper electrode and lower electrode provided in the reaction chamber, flowing a mixed gas containing halogen under reduced pressure, and applying high frequency power to both electrodes The metal material of the upper electrode is etched by the action of the plasma, and a part of the reaction product containing the generated metal material component is deposited on the surface of the substrate to be processed placed on the lower electrode side, and activated chlorine or Provided is a method for manufacturing a semiconductor device in which a metal film is formed by reduction with hydrogen.

Preferably,
A metal film is formed by depositing a part of the reaction product containing metal components generated by plasma etching of the upper electrode material with a mixed gas containing halogen on the surface of the substrate to be processed placed on the lower electrode side. In this case, the film forming step and the step of removing impurities contained in the formed film are alternately performed.

Also preferably,
A metal film is formed by depositing a part of the reaction product containing metal components generated by plasma etching of the upper electrode material with a mixed gas containing halogen on the surface of the substrate to be processed placed on the lower electrode side. In this case, the film forming step, the etching step, and the step of removing impurities contained in the formed film are alternately performed, or the step of removing the impurities contained in the film forming step and the formed film is performed. After alternately performing a plurality of times, a film forming process, an etching process, and a process of removing impurities contained in the formed film are performed.

Also preferably,
The metal material is any one of Ru, Ni, Ti, Zr, Hf, Nb, Ta, Mo, W, Al, Ga, In, and Cu.

Also preferably,
A gas for plasma etching a metal material is a mixed gas containing chlorine (Cl ₂ ) and hydrogen chloride (HCl).

Also preferably,
Use of halogen gas radicals such as hydrogen (H ₂ ), hydrogen radicals and chlorine radicals as the reducing gas for removing impurities contained in the deposited film in the metal film forming step, and excitation gas One kind or a combination of two or more kinds of helium (He), neon (Ne), argon (Ar), and nitrogen (N ₂ ).

Also preferably,
When a processing gas for etching a metal material or removing impurities in a film formed on a substrate to be processed is supplied to the reaction chamber, the processing gas is supplied from a plurality of holes provided in the metal material.

Also preferably,
When forming the metal film on the substrate to be processed, the ratio of the electrode diameter to the electrode spacing is set to 1 / (2) in order to reduce the area of the reaction chamber side wall and to reduce the amount of reaction products adhering to the wall as much as possible. 5 or less.

Also preferably,
When a metal film is formed on a substrate to be processed, high-frequency power that is 180 degrees out of phase is supplied to the upper electrode and the lower electrode in an electrically insulated manner from the reaction chamber wall and other members in order to improve the efficiency .

Also preferably,
A pedestal is rotatably provided on the lower electrode, and the metal film is formed by repeatedly lifting the substrate to be processed in the course of forming the metal film, rotating it at an angle smaller than 360 degrees, and placing it on the lower electrode again. To do.

Also preferably,
The reaction chamber side wall is heated from 200 ° C. to 300 ° C. so that the metal film precursor formed by the upper electrode does not adhere to the reaction chamber side wall, and the metal film is formed on the substrate placed on the lower electrode. Is called.

Also preferably,
The temperature of the upper electrode and the lower electrode is equal, or the temperature of the upper electrode is raised above the temperature of the lower electrode to form a metal film.

1 Processing chamber 5 Wafer (substrate)
12 Metal member 34 Upper electrode 35 Lower electrode 280 Controller (control part)

Claims (3)

A processing chamber for processing the substrate;
A gas supply unit for supplying a halogen-containing gas and a hydrogen gas into the processing chamber;
A plasma generating unit that converts the gas supplied into the processing chamber into a plasma state;
An exhaust section for exhausting the processing chamber;
A member to be etched provided in the processing chamber;
A control unit for controlling the gas supply unit and the plasma generation unit,
The controller is
The halogen-containing gas is supplied from the gas supply unit into the processing chamber, the halogen-containing gas supplied into the processing chamber is changed to a plasma state by the plasma generation unit, and the halogen-containing gas in the plasma state is used as the target gas. A first step of etching the etching member, depositing a reaction product generated by etching on the substrate, and then exhausting the processing chamber by the exhaust unit;
The hydrogen gas is supplied from the gas supply unit into the processing chamber, the hydrogen gas supplied into the processing chamber is changed to a plasma state by the plasma generation unit, and the hydrogen gas in the plasma state is supplied onto the substrate. A second step of exhausting the processing chamber by the exhaust unit after processing the substrate;
A substrate processing apparatus characterized by repeating this cycle as one cycle. The substrate processing apparatus according to claim 1, wherein the gas supply unit is provided to face the substrate through the metal member. A halogen-containing gas is supplied from a gas supply unit into the processing chamber, the halogen-containing gas supplied into the processing chamber is brought into a plasma state by a plasma generation unit, and the halogen-containing gas in the plasma state is provided in the processing chamber. Etching the member to be etched, depositing a reaction product generated by etching on the substrate, and then exhausting the processing chamber by an exhaust unit;
Hydrogen gas is supplied from the gas supply unit into the processing chamber, the hydrogen gas supplied into the processing chamber is changed to a plasma state by the plasma generation unit, and the hydrogen gas in a plasma state is supplied onto the substrate. A second step of exhausting the processing chamber by the exhaust unit after processing the substrate;
A method for manufacturing a semiconductor device, characterized in that this cycle is repeated as one cycle.

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