JP4482931B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor element, and more particularly to a method for efficiently forming a contact hole in an insulating film.

  Conventionally, in a manufacturing process of a semiconductor device, a step of covering a semiconductor film with a gate insulating film, a step of forming a gate electrode on the gate insulating film, and a step of covering the gate insulating film and the gate electrode with a protective insulating film After that, contact holes that penetrate the protective insulating film and the gate insulating film and reach the source / drain regions of the semiconductor film are formed, and conductive materials such as aluminum and tungsten are formed in these contact holes by a film forming method such as a sputtering method. A method of forming a source / drain electrode by embedding a body is widely used.

  The contact hole can be formed, for example, by forming an etching mask having an opening in a region where the contact hole is to be formed on an insulating film such as a silicon oxide film and performing etching through this mask.

On the other hand, Japanese Patent Laid-Open No. 2003-518755 (Patent Document 1) discloses an insulating film at a position where a contact hole is to be formed after an insulating film made of an organic material is formed in a manufacturing process of a semiconductor device using an organic semiconductor material. A method is disclosed in which a through-hole is provided in an insulating film by locally supplying a solvent capable of dissolving the solvent by inkjet.
Special table 2003-518755

  However, a method of forming an etching mask having a fine pattern for forming a contact hole is expensive, tends to be complicated and difficult to increase the throughput.

  The method used for the organic semiconductor described above can form a through-hole in the insulating film with a simple process, but an inorganic insulating film such as a silicon oxide film cannot be dissolved with a solvent. Cannot be used.

  Accordingly, an object of the present invention is to provide a method for manufacturing a semiconductor element, in which a contact hole can be easily formed with fewer steps when an inorganic insulating film such as a silicon oxide film is used as the insulating film.

  In order to solve the above problems, a method of manufacturing a semiconductor device according to the present invention includes a first conductive film, an insulating film formed on the first conductive film, and a first film formed on the insulating film. The first conductive film and the second conductive film are electrically connected by a third conductive film formed in a contact hole provided in the insulating film. A method of manufacturing a semiconductor element, wherein the insulating film precursor film is converted to the insulating film by a predetermined treatment on the first conductive film and can be dissolved or dispersed in a predetermined liquid. And a second step of supplying the predetermined liquid to a position where the contact hole is to be formed in the precursor film of the insulating film, and forming the contact hole in the precursor film of the insulating film. And a step of converting the precursor film of the insulating film into the insulating film Characterized in that it comprises a step.

  As described above, once the inorganic insulating film is formed, it is difficult to form a through hole by dissolving it with a specific solvent or the like. According to the method of the present invention, since the contact hole is formed in the precursor film of the insulating film that can be dissolved or dispersed in a predetermined liquid, the through hole is formed by a simple method of locally supplying the liquid. Can do. If the precursor film is converted into an insulating film by a predetermined treatment after the through holes are formed, a configuration in which contact holes are formed in the inorganic insulating film can be obtained.

  Here, the first conductive film and the second conductive film are not particularly limited as long as the first conductive film and the second conductive film have conductivity and are formed with an insulating film interposed therebetween, and examples thereof include a semiconductor film and a metal wiring. In particular, the first conductive film is preferably a source region or a drain region formed in the semiconductor film. If a through hole reaching the source region or the drain region is formed, a conductive film can be formed here, and the source / drain electrodes can be easily formed.

  Further, in the method for manufacturing a semiconductor device according to the present invention, after the second step, a liquid containing a conductive material is supplied into the contact hole to form the third conductive film, It is desirable to include.

  According to such a configuration, the third conductive film can be formed in the contact hole by local supply of liquid as in the case of the contact hole. By using a common method of supplying a liquid for forming the contact hole and the third conductive film, the working efficiency can be increased using the same apparatus or the like. As the conductive material, for example, conductive fine particles can be used. After the conductive material is supplied into the contact hole, the conductivity may be increased by performing a baking treatment or the like as necessary. Note that in the fourth step, a liquid containing a conductive material may be supplied also to the surface of the insulating film, and the second conductive film and the third conductive film may be formed integrally.

  In the method of manufacturing a semiconductor element according to the present invention, in the second step, the third conductive film is made to contain a conductive material in the predetermined liquid and converted into a third conductive film by a predetermined process. It is also desirable to include a fifth step of forming a precursor film and, after the second step, converting the precursor film of the third conductive film into the third conductive film.

  According to such a configuration, the formation of the contact hole and the formation of the precursor film of the third conductive film can be performed simultaneously. For example, conductive fine particles may be used as the conductive material.

  Moreover, it is desirable to supply the predetermined liquid performed in the second step by an ink jet method. According to the ink jet method, it is possible to accurately supply a fixed amount of solution to a minute local area, which is suitable for a method for forming a semiconductor element having a fine structure.

  Moreover, it is desirable that the process of converting the precursor film of the insulating film into the insulating film or the process of converting the precursor film of the third conductive film into the third conductive film includes a baking process or a light irradiation process. . With these treatments, it can be easily converted into an insulating film or a conductive film using a device or the like used for manufacturing a conventional semiconductor element.

  Further, it is preferable that the predetermined liquid supplied in the second step contains an organic solvent, and the organic solvent dissolves or disperses the precursor film of the insulating film. According to such a structure, a through-hole can be easily formed in a precursor film | membrane by supplying an organic solvent locally.

  The predetermined liquid supplied in the second step preferably contains a higher order silane compound, and the higher order silane compound dissolves or disperses the precursor of the insulating film. Liquid higher order silanes such as cyclopentasilane can be supplied as they are, or dissolved or dispersed in an organic solvent such as toluene or xylene, and supplied locally to the precursor film of the inorganic insulating film to form through holes. it can. The discharged higher order silane is also converted into an insulating film in the third step.

  Note that the precursor film of the insulating film in which the through hole is formed by an organic solvent or higher order silane can be formed by higher order silane or polysilazane. Higher order silane or polysilazane is dissolved or dispersed in an organic solvent such as toluene or xylene, and the substrate is formed by a method such as spin coating, roll coating, curtain coating, dip coating, spraying, or droplet discharge. The precursor film of the insulating film can be formed by applying to and drying. The higher order silane may be used as it is without being dissolved in the solvent.

  The present invention also includes an electro-optical device including a semiconductor element manufactured by the above-described method for manufacturing a semiconductor element according to the present invention, and an electronic apparatus including the semiconductor element.

  Here, the electro-optical device means a general device including an electro-optical element that emits light by an electrical action including the semiconductor element according to the present invention or changes the state of light from the outside, and emits light by itself. Includes both those that control the passage of light from the outside. For example, as an electro-optical element, a liquid crystal element, an electrophoretic element having a dispersion medium in which electrophoretic particles are dispersed, an EL (electroluminescence) element, and an electron-emitting element that emits light by applying electrons generated by applying an electric field to a light emitting plate Say what you have.

  An electronic device refers to a general device having a certain function provided with a semiconductor element according to the present invention, and includes, for example, an electro-optical device and a memory. The configuration is not particularly limited, but for example, an IC card, a mobile phone, a video camera, a personal computer, a head-mounted display, a rear-type or front-type projector, a fax machine with a display function, a digital camera finder, a portable TV, A DSP device, PDA, electronic notebook, electronic bulletin board, advertising display, etc. are included.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<First embodiment>
FIG. 1 is an explanatory view showing a method of forming a thin film transistor (TFT) as a first embodiment of a method for manufacturing a semiconductor device according to the present invention.

(Formation of channel region)
First, as shown in FIG. 1A, an amorphous silicon film 12 is formed as a channel region on a substrate 10 made of glass or the like. In this embodiment, a solution obtained by diluting a higher order silane compound with toluene (concentration: 10%) is discharged onto the substrate 10 from a head nozzle using, for example, an inkjet method in a nitrogen atmosphere, and then at 400 ° C. for 30 minutes. The amorphous silicon film 12 is obtained by heating to a certain degree (in a nitrogen atmosphere).

  The higher order silane compound can be obtained, for example, by putting cyclopentasilane in a glass container and polymerizing it by irradiating ultraviolet rays while stirring with a stirrer.

(Formation of source / drain regions)
Next, source / drain regions are formed. In this embodiment, the source / drain regions are formed by discharging and supplying a modified higher order silane compound solution containing yellow phosphorus onto the substrate 10 and the amorphous silicon film 12 from a nozzle and performing heat treatment.

  Here, since it is necessary to strictly control the position of the source / drain region, the liquid repellent property is previously applied to other regions so that the modified higher order silane compound solution is supplied only to the region where the source / drain region is to be formed. A monomolecular film is formed. A liquid repellent monomolecular film having such a pattern can be obtained by first forming a monomolecular film on the entire surface and then removing unnecessary portions.

The liquid repellent monomolecular film is, for example, a compound having a liquid repellent organic residue at one end and a functional group capable of binding to the substrate surface at the other end (for example, Y _n SiX _(4-n) [where , Y represents an alkyl group, a fluoroalkyl group, a vinyl group, an amino group, a phenyl group or an epoxy group; X represents an alkoxyl group or a halogen; n represents an integer of 1 to 3] A solution containing a ring agent or the like can be formed by contacting the surface of the substrate 10 and the amorphous silicon film 12.

  Next, the liquid repellent monomolecular film formed in the region where the source / drain region is to be formed is removed. This step can be performed, for example, by irradiating ultraviolet rays through a mask having an opening in a region where the liquid repellent monomolecular film is to be removed. FIG. 1B shows a state in which a liquid repellent monomolecular film is formed in a necessary region in this way.

  Subsequently, as shown in FIG. 5C, a modified higher order silane compound solution containing yellow phosphorus is discharged and supplied from the nozzle onto the substrate 10 and the amorphous silicon film 12 in a nitrogen atmosphere, and heated and fired at 400 ° C. for 30 minutes. (In a nitrogen atmosphere). By this heating, the liquid repellent monomolecular film remaining on the substrate is decomposed and removed. Thus, the amorphous silicon film 16 doped with phosphorus is obtained as the source / drain regions. Here, the modified higher order silane compound solution containing yellow phosphorus is, for example, added 1 wt% of yellow phosphorus to cyclopentasilane and dissolved, and then irradiated with ultraviolet rays to polymerize, and then diluted with toluene (concentration 10%). Can be obtained.

(Crystallization)
Subsequently, the amorphous silicon film 16 doped with phosphorus serving as a source / drain region and the amorphous silicon film 12 serving as a channel region are crystallized. Crystallization is performed, for example, by irradiating the entire surface of the substrate with an excimer laser and converting the amorphous silicon film into a polycrystalline silicon film. Laser irradiation is performed in the atmosphere.

(First step: insulating film precursor formation step)
Next, as a first step of the method for manufacturing a semiconductor device according to the present invention, a step of forming a precursor film of an insulating film will be described.

In this embodiment, a polysilazane film is formed as a precursor film of the insulating film. Polysilazane is an inorganic polymer having — (SiH ₂ NH) — as a basic unit, and reacts with water or oxygen by firing in the atmosphere or in a steam-containing atmosphere, at about 400 ° C. to 450 ° C .— (SiO ₂ ). -Is converted to a silicon oxide film having a unit.

  Here, a polysilazane xylene solution is applied to the entire surface of the substrate by spin coating and dried to form a polysilazane film. A state in which the polysilazane film is formed is shown in FIG. The polysilazane film is formed so as to cover the substrate 10, the channel region 12, and the source / drain region 16.

(Second process: contact hole formation process)
Subsequently, a through hole as a contact hole is formed in the polysilazane film 18 which is a precursor film of the insulating film. The contact holes reach the source / drain regions, respectively. In this embodiment, xylene is used as a solution for dissolving the polysilazane film, and the nozzle is discharged to a region where a contact hole is to be formed (see FIG. 1E).

  FIG. 2F shows a state after discharging the solution. The precursor film of the insulating film dissolves only at the portion in contact with xylene, and at the same time, is pushed out by xylene to form contact holes 20 reaching the source / drain regions 16. Around the contact hole 20, the material of the precursor film formed at the place where the contact hole 20 was formed is extruded while being pushed up by xylene and dried, and becomes a precursor film containing polysilazane again. .

(Third step: Step of converting the precursor film of the insulating film into an insulating film)
Next, the insulating film 18 in which the contact hole 20 is formed is baked in the atmosphere at 400 ° C. for 1 hour, and converted into a silicon oxide film 18 ′ (see FIG. 1G) serving as an insulating film.

(Formation of gate electrode, source electrode, drain electrode and wiring)
Next, as shown in FIG. 1G, metallic ink is ejected from the nozzle as a liquid containing a conductive material, and the contact hole 20 is filled to form a third conductive film precursor 22. Subsequently, metal ink is supplied onto the insulating film 18 in accordance with a desired wiring pattern to form a precursor film 24 of the second conductive film. As the metal ink, for example, a liquid containing fine particles having a diameter of about several nanometers such as Ag, Au, and Cu can be used. Here, as the solvent, water, general organic solvents such as alcohols and hydrocarbons can be used. Examples of such metal ink include nano metal ink (gold, silver) manufactured by Vacuum Metallurgical Co., Ltd. and nano paste manufactured by Harima Chemicals Co., Ltd.

  Further, a metal ink is also supplied onto the silicon oxide film 18 ′ laminated on the channel region 12 to form a gate electrode precursor 26. At this time, as shown in FIG. 1G, in the second step, an insulating film formed so as to swell around the contact hole 20 is formed with the gate electrode precursor 26 and other metal wiring (second wiring). It can also be used to isolate the precursor 24 of the conductive film).

  After supplying the metal ink, the precursors 22 and 24 of the second and third conductive films are integrally converted into the second and third conductive films by firing, and the source / drain regions (first conductive film) Film) 16 and the second conductive film 24 are electrically connected by the third conductive film 22. Further, during firing, the precursor 26 of the gate electrode is converted into a gate electrode, and a TFT is formed.

<Second Embodiment>
FIG. 2 shows an example of a multilayer wiring formed by using the method for manufacturing a semiconductor element according to the present invention.

  Here, the gate electrode 32 and the metal wiring 34 which are the first conductive films and the metal wiring 40 which is the second conductive film are formed in the insulating film 30 in the contact holes 36 and 38. They are electrically connected by a conductive film.

  Such multilayer wiring is formed as follows using the method for manufacturing a semiconductor device according to the present invention. First, the precursor of the insulating film 30 is formed by the method shown in the first step of the first embodiment so as to cover the TFT 1 and the TFT 2 formed by the method shown in FIGS. . Subsequently, contact holes 36 and 38 reaching the gate electrode 32 of the TFT 1 and the wiring 34 of the TFT 2 are formed by the method shown in the second step. Next, the precursor film of the insulating film 30 is converted to the insulating film 30 by the method shown in the third step, and then the metal ink is supplied to fill the contact holes 36 and 38 and to connect the two The pattern 40 is drawn on the insulating film 30 and finally baked.

  As described above, by using the semiconductor element manufacturing method according to the present invention, it is possible to connect a plurality of TFTs and form a multilayer structure by a simple process of discharging liquid from the nozzles.

  In this embodiment, an example using the ink jet method has been described. However, the present invention is not limited to the ink jet method as long as the liquid can be selectively discharged from the nozzle, and a dispenser method or the like may be used.

<Third embodiment>
In this embodiment, in the second step, the liquid supplied to the position where the contact hole of the precursor film of the insulating film is to be formed contains a conductive material, and at the same time as the formation of the contact hole, A precursor film is formed.

  The formation of the channel region, the formation of the source / drain regions, crystallization, and the first step are the same as in the first embodiment, and a description thereof is omitted here.

(Second step: contact hole formation and third conductive film precursor film formation step)
As shown in FIG. 3A, a metal ink in which ultrafine metal particles are dispersed in xylene as a conductive material is discharged and supplied to a region where a contact hole of a precursor film 42 of an insulating film is to be formed by an inkjet method. Contact holes leading to the source / drain regions are formed.

  FIG. 2B shows a state after the liquid is discharged. The insulating film precursor film 42 is dissolved in a solvent contained in the metal ink, and is mixed with the metal ink and extruded to the surroundings to form the contact holes 44 and 46. 46, precursor films 48 and 50 of third conductive films made of a mixture of metal fine particles and an insulating film precursor are formed.

(Third step: a step of converting the precursor film of the insulating film and the precursor film of the third conductive film into the insulating film and the third conductive film, respectively)
Subsequently, the polysilazane film 42, which is a precursor film of the insulating film, is baked in the atmosphere at 400 ° C. for 1 hour to convert the polysilazane film 42 into the silicon oxide film 42 ′. It converts into the 3rd electrically conductive film 48 ', 50' (FIG.3 (C)).

(Formation of gate electrode and wiring)
Subsequently, using the same metal ink as used in the second step, a wiring pattern 52 is drawn on the surface of the precursor film 42 of the insulating film by an ink jet method to form a precursor film of the second conductive film, A gate electrode precursor film 54 is formed on a silicon oxide film (insulating film) 42 ′ stacked in the channel formation region, dried and baked to form a second conductive film 52 ′ and a gate electrode 54 ′, respectively. (FIG. 3D).

  In this way, it is possible to easily obtain a configuration in which the source / drain regions as the first conductive film and the metal wiring 52 'as the second conductive film are electrically connected by the third conductive film.

<Fourth embodiment>
This embodiment is characterized in that a film containing a higher order silane compound is formed as a precursor film of the insulating film instead of the polysilazane used in the first embodiment.

  The formation of the channel region, the formation of the source / drain regions, and the crystallization process are the same as those in the first embodiment, and a description thereof is omitted here.

(First step)
In a nitrogen atmosphere, as shown in FIG. 4A, a solution obtained by diluting a higher order silane compound with toluene so as to cover the polysilicon film to be the channel region 62 and the source / drain region 66 (concentration 10%). ) Is discharged over the entire surface of the substrate 60 by an inkjet method in a nitrogen atmosphere to form a precursor film 68 of an insulating film. The high-order silane compound used here can use the same liquid as that used for forming the amorphous silicon film in the first embodiment, but is not limited to this. For example, the general formula Si _n X _m ( Here, n represents an integer of 3 or more, and m represents an independent integer of 4 or more, and X represents a substituent such as a hydrogen atom and / or a halogen atom.) Can be used. Of these, a silane compound having a cyclic structure in at least one position in the molecule is preferably used as a raw material because it has extremely high reactivity with light and photopolymerization can be performed efficiently. Among them, Si _n X _2n such as cyclotetrasilane, cyclopentasilane, cyclohexasilane, cycloheptasilane (wherein, n represents an integer of 3 or more, X is a hydrogen atom and / or fluorine atom, chlorine atom, bromine) In addition to the above reasons, a silane compound represented by the formula (1) represents a halogen atom such as an atom or an iodine atom.

(Second step)
Subsequently, in a nitrogen atmosphere, as shown in FIG. 4 (B), cyclopentasilane is discharged and supplied to the position where the contact hole is to be formed in the precursor film 68 of the insulating film by the ink jet method. The film is dissolved to form a contact hole 70.

(Third process)
Next, the substrate was heated at 200 ° C. in a nitrogen atmosphere to evaporate cyclopentasilane remaining in the film and higher-order silane with insufficient polymerization to form higher-order contact holes 70 formed. A silane film can be obtained. Thereafter, the substrate is baked in the atmosphere (400 ° C., 30 minutes), and the precursor film 68 of the insulating film is converted into a silicon oxide film (insulating film).

  Subsequent formation of the gate electrode, source electrode, drain electrode, and wiring can be performed in the same manner as in the first embodiment, and description thereof is omitted here.

  Even if a higher order silane film is used as the precursor film of the insulating film, a plurality of TFTs can be connected and a multilayer structure can be formed by a simple process using an ink jet method. Further, cyclopentasilane supplied for forming a contact hole can be used as a toluene solution (for example, 10% concentration), thereby improving the safety of work. In addition, as shown in the third embodiment, the precursor film of the third conductive film can be formed simultaneously with the formation of the contact hole by mixing and supplying metal fine particles to the toluene solution of cyclopentasilane. Is also possible. Also in this case, first, baking is performed in a nitrogen atmosphere (for example, 200 ° C., 30 minutes), cyclopentasilane remaining in the film and higher-order silane having insufficient polymerization are evaporated, and then baking in the atmosphere (for example, (400 ° C., 30 minutes), the higher order silane film can be converted into a silicon oxide film.

<Fifth embodiment>
The fifth embodiment of the present invention relates to an electro-optical device including a semiconductor device manufactured by the method for manufacturing a thin film transistor of the present invention. As an example of an electro-optical device, an organic EL (electroluminescence) device is given.

  FIG. 5 is a diagram illustrating the configuration of the electro-optical device 100 according to the fifth embodiment. The electro-optical device 100 according to this embodiment includes a circuit substrate (active matrix substrate) in which pixel drive circuits including thin film transistors T1 to T4 are arranged in a matrix on a substrate, and a light emitting layer that is driven by the pixel drive circuit to emit light. And drivers 101 and 102 for supplying a driving signal to a pixel driving circuit including the thin film transistors T1 to T4. The driver 101 supplies a drive signal to each pixel region via the scanning line Vsel and the light emission control line Vgp. The driver 102 supplies a drive signal to each pixel region via the data line Idata and the power supply line Vdd. By controlling the scanning line Vsel and the data line Idata, a current program for each pixel region is performed, and light emission by the light emitting unit OELD can be controlled. The thin film transistors T1 to T4 and the drivers 101 and 102 constituting the pixel driving circuit are formed by applying the manufacturing methods of the first to fourth embodiments described above.

  Although an organic EL device has been described as an example of an electro-optical device, various electro-optical devices such as a liquid crystal display device can be manufactured in the same manner.

  Next, various electronic apparatuses configured by applying the electro-optical device 100 according to the invention will be described. FIG. 6 is a diagram illustrating an example of an electronic apparatus to which the electro-optical device 100 can be applied. FIG. 6A shows an application example to a mobile phone, and the mobile phone 230 includes an antenna portion 231, an audio output portion 232, an audio input portion 233, an operation portion 234, and the electro-optical device 100 of the present invention. . As described above, the electro-optical device according to the invention can be used as a display unit. FIG. 6B shows an application example to a video camera. The video camera 240 includes an image receiving unit 241, an operation unit 242, an audio input unit 243, and the electro-optical device 100 of the present invention. As described above, the electro-optical device according to the present invention can be used as a finder or a display unit. FIG. 6C shows an application example to a portable personal computer (so-called PDA). The computer 250 includes a camera unit 251, an operation unit 252, and the electro-optical device 100 according to the present invention. As described above, the electro-optical device according to the invention can be used as a display unit.

  FIG. 6D shows an application example to a head-mounted display. The head-mounted display 260 includes a band 261, an optical system storage unit 262, and the electro-optical device 100 according to the present invention. As described above, the electro-optical device according to the present invention can be used as an image display source. The electro-optical device 100 according to the present invention is not limited to the above-described example, and can be applied to any electronic apparatus to which an organic EL device, a liquid crystal display device, or the like can be applied. For example, in addition to these, it can also be used for a fax machine with a display function, a finder for a digital camera, a portable TV, an electronic notebook, an electric bulletin board, a display for advertisements, and the like.

  FIG. 7A shows an application example to a television, and the television 300 includes the electro-optical device 100 according to the present invention. The electro-optical device according to the present invention can be similarly applied to a monitor device used for a personal computer or the like. FIG. 7B shows an application example to a roll-up television, and the roll-up television 310 includes the electro-optical device 100 according to the present invention.

  The manufacturing method according to each embodiment described above can be applied to the manufacture of various devices other than the manufacture of the electro-optical device. For example, various memories such as FeRAM (ferroelectric RAM), SRAM, DRAM, NOR type RAM, NAND type RAM, floating gate type nonvolatile memory, and magnetic RAM (MRAM) can be manufactured. Further, in a non-contact communication system using microwaves, the present invention can be applied to manufacturing an inexpensive tag mounted with a minute circuit chip (IC chip).

  The present invention is not limited to the contents of the above-described embodiments, and various modifications and changes can be made within the scope of the gist of the present invention. For example, in the above-described embodiments, a silicon film is taken as an example of the semiconductor film, but the semiconductor film is not limited to this. In the above-described embodiment, a thin film transistor has been described as an example of a semiconductor element formed using the semiconductor film according to the present invention. However, the semiconductor element is not limited to this, and an SOI transistor or the like is used. Other transistors and other elements (for example, thin film diodes) may be formed. Note that the transistor of the present invention may be used as a transistor of an integrated circuit in addition to being used as a pixel transistor.

1 shows an embodiment of a method of manufacturing a thin film transistor according to the present invention. 1 shows an embodiment of a method of manufacturing a thin film transistor according to the present invention. 1 shows an embodiment of a method of manufacturing a thin film transistor according to the present invention. 1 shows an embodiment of a method of manufacturing a thin film transistor according to the present invention. It is a figure which shows an example of the connection state of an electro-optical apparatus. It is explanatory drawing of the various electronic devices comprised by applying an electro-optical apparatus. It is explanatory drawing of the various electronic devices comprised by applying an electro-optical apparatus.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10, 60 ... Substrate, 12, 62 ... Channel region, 14 ... Liquid repellent monomolecular film, 16, 66 ... Source / drain region (first conductive film), 18, 42, 68 ... Precursor film of insulating film , 18 ', 30, 42', 68 '... insulating film, 20, 36, 38, 44, 46, 70 ... contact hole, 22, 48, 50 ... third conductive film, 24, 40 ... metal wiring (first Second conductive film), 26, 32, 54... Gate electrode

Claims (9)

A first conductive film, an inorganic insulating film formed on said first conductive film includes a second conductive film formed on the inorganic insulating film, a, of the first conductive film and the a second conductive film, a manufacturing method of a semiconductor element are electrically connected by a third conductive film formed in a contact hole provided in the inorganic insulating film,
Forming a precursor film of the inorganic insulating film on the first conductive film, which is converted into the inorganic insulating film by a predetermined treatment and can be dissolved or dispersed in a predetermined liquid;
A second step of supplying the predetermined liquid to a position where the contact hole of the precursor film of the inorganic insulating film is to be formed, and forming the contact hole in the precursor film of the inorganic insulating film;
A third step of converting the precursor film of the inorganic insulating film on the inorganic insulating film,
A method for manufacturing a semiconductor device comprising:   2. The method of manufacturing a semiconductor device according to claim 1, wherein the first conductive film is a source region or a drain region formed in the semiconductor film.   Furthermore, after the said 2nd process, the 4th process of supplying the liquid containing an electroconductive material in the said contact hole, and forming the said 3rd electrically conductive film is included. 2. A method for producing a semiconductor device according to 2. In the second step, containing a conductive material in the predetermined liquid, forming a precursor film of a third conductive film that is converted into a third conductive film by a predetermined process,
The semiconductor element according to claim 1, further comprising a fifth step of converting the precursor film of the third conductive film into the third conductive film after the second step. Manufacturing method.   5. The method of manufacturing a semiconductor device according to claim 1, wherein the predetermined liquid is supplied by an ink jet method.   6. The method of manufacturing a semiconductor element according to claim 1, wherein the predetermined treatment includes a heating step or a light irradiation step. 7. The predetermined liquid supplied in the second step includes an organic solvent, and the organic solvent dissolves or disperses the precursor film of the inorganic insulating film. The manufacturing method of the semiconductor element of description. 7. The predetermined liquid supplied in the second step contains a higher order silane compound, and the higher order silane compound dissolves or disperses the precursor of the inorganic insulating film. The manufacturing method of the semiconductor element in any one of. 9. The method of manufacturing a semiconductor element according to claim 1, wherein the precursor film of the inorganic insulating film contains a higher order silane compound or polysilazane.

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