JP4480009B2 - 欠陥検査装置及び方法、並びにフォトマスクの製造方法 - Google Patents

欠陥検査装置及び方法、並びにフォトマスクの製造方法 Download PDF

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Publication number
JP4480009B2
JP4480009B2 JP2004353249A JP2004353249A JP4480009B2 JP 4480009 B2 JP4480009 B2 JP 4480009B2 JP 2004353249 A JP2004353249 A JP 2004353249A JP 2004353249 A JP2004353249 A JP 2004353249A JP 4480009 B2 JP4480009 B2 JP 4480009B2
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Japan
Prior art keywords
light
inspected
pattern
defect inspection
photomask
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Expired - Fee Related
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JP2004353249A
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English (en)
Japanese (ja)
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JP2006162891A5 (enExample
JP2006162891A (ja
Inventor
淳一 田中
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Hoya Corp
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Hoya Corp
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Publication date
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Priority to JP2004353249A priority Critical patent/JP4480009B2/ja
Priority to TW094142753A priority patent/TWI266861B/zh
Priority to US11/293,306 priority patent/US7724361B2/en
Priority to CNB2005101274616A priority patent/CN100454511C/zh
Priority to KR1020050117853A priority patent/KR100710721B1/ko
Publication of JP2006162891A publication Critical patent/JP2006162891A/ja
Publication of JP2006162891A5 publication Critical patent/JP2006162891A5/ja
Application granted granted Critical
Publication of JP4480009B2 publication Critical patent/JP4480009B2/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

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  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2004353249A 2004-12-06 2004-12-06 欠陥検査装置及び方法、並びにフォトマスクの製造方法 Expired - Fee Related JP4480009B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004353249A JP4480009B2 (ja) 2004-12-06 2004-12-06 欠陥検査装置及び方法、並びにフォトマスクの製造方法
TW094142753A TWI266861B (en) 2004-12-06 2005-12-05 Apparatus and method of inspecting mura-defect and method of fabricating photomask
US11/293,306 US7724361B2 (en) 2004-12-06 2005-12-05 Apparatus and method of inspecting defects in photomask and method of fabricating photomask
CNB2005101274616A CN100454511C (zh) 2004-12-06 2005-12-06 不均缺陷检查装置和方法及光掩模的制造方法
KR1020050117853A KR100710721B1 (ko) 2004-12-06 2005-12-06 결함 검사 장치 및 방법과 포토마스크의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004353249A JP4480009B2 (ja) 2004-12-06 2004-12-06 欠陥検査装置及び方法、並びにフォトマスクの製造方法

Publications (3)

Publication Number Publication Date
JP2006162891A JP2006162891A (ja) 2006-06-22
JP2006162891A5 JP2006162891A5 (enExample) 2008-01-17
JP4480009B2 true JP4480009B2 (ja) 2010-06-16

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Family Applications (1)

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JP2004353249A Expired - Fee Related JP4480009B2 (ja) 2004-12-06 2004-12-06 欠陥検査装置及び方法、並びにフォトマスクの製造方法

Country Status (5)

Country Link
US (1) US7724361B2 (enExample)
JP (1) JP4480009B2 (enExample)
KR (1) KR100710721B1 (enExample)
CN (1) CN100454511C (enExample)
TW (1) TWI266861B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4480001B2 (ja) * 2004-05-28 2010-06-16 Ｈｏｙａ株式会社 ムラ欠陥検査マスク、ムラ欠陥検査装置及び方法、並びにフォトマスクの製造方法
JP4771871B2 (ja) * 2006-06-15 2011-09-14 Ｈｏｙａ株式会社 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法
CN100454006C (zh) * 2006-09-07 2009-01-21 哈尔滨工业大学 一种基于机器视觉的液晶显示器斑痕缺陷检测方法与系统
KR100850113B1 (ko) * 2006-12-27 2008-08-04 동부일렉트로닉스 주식회사 포토 레지스트 패턴의 결함 검출 방법
JP2008170371A (ja) * 2007-01-15 2008-07-24 Hoya Corp パターン欠陥検査方法、及びパターン欠陥検査装置
KR100945918B1 (ko) * 2007-02-02 2010-03-05 주식회사 하이닉스반도체 마스크 결함 검사 방법 및 검사 장치
KR101702887B1 (ko) 2007-04-18 2017-02-06 마이크로닉 마이데이타 에이비 무라 검출 및 계측을 위한 방법 및 장치
KR100892486B1 (ko) 2007-08-01 2009-04-10 경희대학교 산학협력단 다층 주기 구조물의 물리량 산출 방법
KR100902877B1 (ko) 2007-11-15 2009-06-16 (주)티이에스 반도체 제조용 마스크의 크롬면 감지장치
KR100980329B1 (ko) * 2008-04-22 2010-09-06 한국표준과학연구원 기판 결함 검출용 적외선 검사 장치의 보정을 위한 기준패턴 제조 장치 및 그를 이용한 제조 방법
KR20130051796A (ko) * 2011-11-10 2013-05-21 (주)쎄미시스코 기판 검사장치
CN103969853B (zh) * 2013-02-05 2016-06-01 北京京东方光电科技有限公司 阵列基板及其检测方法和检测装置
JP5777068B2 (ja) * 2013-03-01 2015-09-09 レーザーテック株式会社 マスク評価装置
WO2014140047A2 (en) 2013-03-12 2014-09-18 Micronic Mydata AB Method and device for writing photomasks with reduced mura errors
EP2972589B1 (en) 2013-03-12 2017-05-03 Micronic Mydata AB Mechanically produced alignment fiducial method and alignment system
KR102242559B1 (ko) 2014-12-01 2021-04-20 삼성전자주식회사 광학 검사 장치
CN104914133B (zh) * 2015-06-19 2017-12-22 合肥京东方光电科技有限公司 摩擦缺陷检测装置
JP6436883B2 (ja) * 2015-09-11 2018-12-12 東芝メモリ株式会社 欠陥検査方法及び欠陥検査装置
CN105628344B (zh) * 2016-01-29 2019-02-01 深圳英伦科技股份有限公司 背光模组及其透光均匀性检测系统及其led混珠搭配方法
CN105549240B (zh) * 2016-03-11 2018-09-21 京东方科技集团股份有限公司 液晶显示器件的水波纹等级的测量方法和装置
US10446423B2 (en) * 2016-11-19 2019-10-15 Applied Materials, Inc. Next generation warpage measurement system
KR101937187B1 (ko) * 2017-05-11 2019-01-14 주식회사 에이치비테크놀러지 필름표면의 불량 검출 장치
US10983430B2 (en) 2018-02-22 2021-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Mask assembly and haze acceleration method
KR102580487B1 (ko) * 2018-06-18 2023-09-21 주식회사 케이씨텍 패드 모니터링 장치 및 이를 포함하는 패드 모니터링 시스템, 패드 모니터링 방법
CN109814328B (zh) * 2019-03-28 2022-06-10 京东方科技集团股份有限公司 虚拟掩膜板、掩膜板及其制作方法
CN109916657A (zh) * 2019-04-25 2019-06-21 天津益三友色母料有限公司 色母料取样检测装置

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US4886975A (en) * 1986-02-14 1989-12-12 Canon Kabushiki Kaisha Surface examining apparatus for detecting the presence of foreign particles on two or more surfaces
JPH0480762A (ja) * 1990-07-23 1992-03-13 Canon Inc 位置検出装置及びその検出方法
KR100203530B1 (ko) 1994-09-16 1999-06-15 니시무로 타이죠 결함검사장치
US5790247A (en) * 1995-10-06 1998-08-04 Photon Dynamics, Inc. Technique for determining defect positions in three dimensions in a transparent structure
JP3921554B2 (ja) * 1997-01-20 2007-05-30 積水化学工業株式会社 折り畳みコンテナ
JPH10300447A (ja) 1997-04-23 1998-11-13 K L Ee Akurotetsuku:Kk 表面パターンむら検出方法及び装置
US6482557B1 (en) * 2000-03-24 2002-11-19 Dupont Photomasks, Inc. Method and apparatus for evaluating the runability of a photomask inspection tool
US6919957B2 (en) * 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
JP3615181B2 (ja) * 2001-11-06 2005-01-26 株式会社東芝 露光装置の検査方法、焦点位置を補正する露光方法、および半導体装置の製造方法

Also Published As

Publication number Publication date
TWI266861B (en) 2006-11-21
US20060158642A1 (en) 2006-07-20
KR20060063732A (ko) 2006-06-12
CN100454511C (zh) 2009-01-21
JP2006162891A (ja) 2006-06-22
TW200626870A (en) 2006-08-01
US7724361B2 (en) 2010-05-25
KR100710721B1 (ko) 2007-04-23
CN1786698A (zh) 2006-06-14

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