JP4472955B2 - 硫化レニウム(iv)ナノチューブ材料及びそれの製造方法 - Google Patents
硫化レニウム(iv)ナノチューブ材料及びそれの製造方法 Download PDFInfo
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- JP4472955B2 JP4472955B2 JP2003295214A JP2003295214A JP4472955B2 JP 4472955 B2 JP4472955 B2 JP 4472955B2 JP 2003295214 A JP2003295214 A JP 2003295214A JP 2003295214 A JP2003295214 A JP 2003295214A JP 4472955 B2 JP4472955 B2 JP 4472955B2
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- rhenium
- nanotube
- sulfide
- res
- nanotubes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G47/00—Compounds of rhenium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/78—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by stacking-plane distances or stacking sequences
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/13—Nanotubes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
Description
(a) ナノチューブ鋳型材料を用意する段階、
(b) この鋳型材料をレニウム含有溶液で含浸処理する段階、
(c) 上記含浸処理された鋳型材料を乾燥する段階、
(d) 段階(c) からの乾燥した材料を硫化剤で処理する段階、
を含む。
本発明のReS2ナノチューブ材料を製造するために、約8〜10の炭素層を含む多層壁カーボンナノチューブ材料(MWCNT) を鋳型として使用した。これは、図2に示すHRTEM 像によって確認した。この材料は、約8〜9nm及び約20nmの内径及び外径を有する。この材料を、MWCNT 材料中の炭素のモル量の25%に相当するモル量のReを含むNH4ReO4 の水溶液で含浸処理した。このサンプルを乾燥し次いで1000℃で3時間、硫化水素で処理した。図3に示すHRTEM 像により、カーボンナノチューブの表面上に新規のナノチューブ材料が成長したことが明らかになった。図3は、特に、ReS2が、カーボンチューブの閉じた端部を覆っていることを示している。
例2
MWCNT 上のReS2のサンプルを例1に記載のように製造した。但し、NH4ReO4 含浸溶液中のReのモル量は、このサンプルの0.125 のRe:C原子比に対応して半分にした。得られたReS2ナノチューブ材料は、MWCNT 上のReS2層の典型数が4〜7であったことを除き、例1で得られた材料と同じ特性を有していた。このサンプルのHRTEM 像を図4に示す。
例3
MWCNT 上のReS2のサンプルを例1に記載のように製造した。但し、NH4ReO4 含浸溶液中のReのモル比を、このサンプルの0.025 のRe:C原子比に対応して例1の量の10分の1まで減らした。得られたReS2ナノチューブ材料は、MWCNT 上のReS2の典型数が1〜2であることを除き、例1で得られた材料と同じ特性を有していた。このサンプルのHRTEM 像を図5に示す。
Claims (7)
- 同心の硫化レニウム(IV)層の筒状体と、ナノチューブ鋳型材料からなる硫化レニウム(IV)(ReS2)ナノチューブ材料であって、この際、ReS2層間距離が0.5〜0.7nmであり、各々のReS2層が、硫黄原子の二つの層の間に挟まれたレニウム原子の層からなる、上記ナノチューブ材料。
- ナノチューブの内径が2〜500nmである、請求項1の硫化レニウム(IV)ナノチューブ材料。
- 1〜50の同心の層を含む、請求項1または2の硫化レニウム(IV)ナノチューブ材料。
- 請求項1の硫化レニウム(IV)ナノチューブ材料の製造方法であって、次の段階、すなわち
(a) ナノチューブ鋳型材料を用意する段階、
(b) 上記鋳型材料をレニウム含有溶液で含浸処理する段階、
(c) 上記含浸処理された鋳型材料を乾燥する段階、
(d) 段階(c)からの乾燥した材料を硫化剤で処理する段階、
を含む、上記方法。 - 炭素のナノチューブ鋳型材料を使用する、請求項4の方法。
- 単一層壁または多層壁のカーボンナノチューブ鋳型材料を使用する、請求項5の方法。
- 2〜500nmの内径または外径を有するナノチューブ鋳型材料を使用する、請求項4の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DKPA200201250 | 2002-08-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004083405A JP2004083405A (ja) | 2004-03-18 |
JP4472955B2 true JP4472955B2 (ja) | 2010-06-02 |
Family
ID=34530571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003295214A Expired - Fee Related JP4472955B2 (ja) | 2002-08-24 | 2003-08-19 | 硫化レニウム(iv)ナノチューブ材料及びそれの製造方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6887453B2 (ja) |
EP (1) | EP1394115B1 (ja) |
JP (1) | JP4472955B2 (ja) |
KR (1) | KR101001162B1 (ja) |
AT (1) | ATE446278T1 (ja) |
DE (1) | DE60329739D1 (ja) |
DK (1) | DK1394115T3 (ja) |
ES (1) | ES2333591T3 (ja) |
TW (1) | TWI280950B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US7227066B1 (en) * | 2004-04-21 | 2007-06-05 | Nanosolar, Inc. | Polycrystalline optoelectronic devices based on templating technique |
KR100745752B1 (ko) * | 2005-06-28 | 2007-08-02 | 삼성전자주식회사 | 탄소나노튜브의 탄화질 불순물의 정제방법 |
US8916000B2 (en) * | 2005-11-29 | 2014-12-23 | Korea Kumho Petrochemical Co., Ltd. | System and method for producing carbon nanotubes |
US20070227700A1 (en) * | 2006-03-29 | 2007-10-04 | Dimitrakopoulos Christos D | VLSI chip hot-spot minimization using nanotubes |
US7796999B1 (en) | 2006-04-03 | 2010-09-14 | Sprint Spectrum L.P. | Method and system for network-directed media buffer-size setting based on device features |
CN105152139B (zh) * | 2007-09-10 | 2017-08-25 | 曳达研究和发展有限公司 | 富勒烯样纳米结构体及其应用和制造方法 |
US8063483B2 (en) | 2007-10-18 | 2011-11-22 | International Business Machines Corporation | On-chip temperature gradient minimization using carbon nanotube cooling structures with variable cooling capacity |
CN110838586B (zh) * | 2018-08-15 | 2023-02-10 | 深圳国家能源新材料技术研发中心有限公司 | 一种硫化铼纳米管及其制备方法和应用 |
CN114892277B (zh) * | 2022-04-20 | 2023-11-14 | 苏州科技大学 | 具有强室温铁磁性二维材料的制备方法 |
Family Cites Families (16)
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US4308171A (en) * | 1977-05-16 | 1981-12-29 | Exxon Research & Engineering Co. | Method of preparing di and poly chalcogenides of group VIIb by low temperature precipitation from nonaqueous solution and small crystallite size stoichiometric layered dichalcogenides of rhenium and technetium |
US5958358A (en) * | 1992-07-08 | 1999-09-28 | Yeda Research And Development Co., Ltd. | Oriented polycrystalline thin films of transition metal chalcogenides |
US5591312A (en) | 1992-10-09 | 1997-01-07 | William Marsh Rice University | Process for making fullerene fibers |
WO1995010481A1 (en) | 1993-10-13 | 1995-04-20 | E.I. Du Pont De Nemours And Company | Carbon nanotubes and nested fullerenes supporting transition metals |
DE69830847T2 (de) | 1997-03-07 | 2006-01-12 | William Marsh Rice University, Houston | Kohlenstofffasern ausgehend von einwandigen kohlenstoffnanoröhren |
US6045769A (en) | 1997-12-08 | 2000-04-04 | Nanogram Corporation | Process for carbon production |
KR100814217B1 (ko) | 1998-09-18 | 2008-03-17 | 윌리엄 마쉬 라이스 유니버시티 | 탄소 나노튜브 생성 방법 |
US6146227A (en) * | 1998-09-28 | 2000-11-14 | Xidex Corporation | Method for manufacturing carbon nanotubes as functional elements of MEMS devices |
CN1174916C (zh) | 1999-04-21 | 2004-11-10 | 张震 | 碳毫微管的形成方法 |
IL129718A0 (en) | 1999-05-02 | 2000-02-29 | Yeda Res & Dev | Synthesis of nanotubes of transition metal chalcogenides |
US6333016B1 (en) * | 1999-06-02 | 2001-12-25 | The Board Of Regents Of The University Of Oklahoma | Method of producing carbon nanotubes |
DE60028869T2 (de) | 1999-06-16 | 2007-01-18 | Institute Of Metal Research Of The Chinese Academy Of Sciences | Herstellung von einwandigen Kohlenstoffnanoröhren |
EP1061041A1 (en) | 1999-06-18 | 2000-12-20 | Iljin Nanotech Co., Ltd. | Low-temperature thermal chemical vapor deposition apparatus and method of synthesizing carbon nanotube using the same |
WO2001030690A2 (de) | 1999-10-27 | 2001-05-03 | Eidgenössische Technische Hochschule Zürich | Verfahren zur herstellung von aus übergangsmetalloxiden bestehenden nanotubes |
DE10048406A1 (de) | 2000-09-29 | 2002-06-06 | Infineon Technologies Ag | Verfahren zum Herstellen eines heterogenen Katalysators; dadurch hergestellter, heterogener Katalysator; sowie Verwendung des hergestellten heterogenen Katalysators zum Umsetzen eines Substrats |
SI20688A (sl) * | 2000-10-10 | 2002-04-30 | Institut "Jo�Ef Stefan" | Postopek za sintezo nanocevčic dihalkogenidov prehodnih kovin |
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2003
- 2003-08-06 EP EP03017936A patent/EP1394115B1/en not_active Expired - Lifetime
- 2003-08-06 DK DK03017936T patent/DK1394115T3/da active
- 2003-08-06 AT AT03017936T patent/ATE446278T1/de not_active IP Right Cessation
- 2003-08-06 ES ES03017936T patent/ES2333591T3/es not_active Expired - Lifetime
- 2003-08-06 DE DE60329739T patent/DE60329739D1/de not_active Expired - Lifetime
- 2003-08-13 US US10/639,518 patent/US6887453B2/en not_active Expired - Fee Related
- 2003-08-19 JP JP2003295214A patent/JP4472955B2/ja not_active Expired - Fee Related
- 2003-08-22 TW TW092123114A patent/TWI280950B/zh not_active IP Right Cessation
- 2003-08-22 KR KR1020030058200A patent/KR101001162B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR101001162B1 (ko) | 2010-12-15 |
DE60329739D1 (de) | 2009-12-03 |
DK1394115T3 (da) | 2010-01-04 |
EP1394115A2 (en) | 2004-03-03 |
TW200403190A (en) | 2004-03-01 |
ES2333591T3 (es) | 2010-02-24 |
US20050036937A1 (en) | 2005-02-17 |
KR20040018211A (ko) | 2004-03-02 |
EP1394115A3 (en) | 2004-09-08 |
ATE446278T1 (de) | 2009-11-15 |
US6887453B2 (en) | 2005-05-03 |
EP1394115B1 (en) | 2009-10-21 |
JP2004083405A (ja) | 2004-03-18 |
TWI280950B (en) | 2007-05-11 |
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