JP4469054B2 - 誘導結合形プラズマ処理装置 - Google Patents
誘導結合形プラズマ処理装置 Download PDFInfo
- Publication number
- JP4469054B2 JP4469054B2 JP2000067107A JP2000067107A JP4469054B2 JP 4469054 B2 JP4469054 B2 JP 4469054B2 JP 2000067107 A JP2000067107 A JP 2000067107A JP 2000067107 A JP2000067107 A JP 2000067107A JP 4469054 B2 JP4469054 B2 JP 4469054B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric window
- processing chamber
- mask member
- processing apparatus
- inductively coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009616 inductively coupled plasma Methods 0.000 title claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 14
- 238000004804 winding Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 29
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000067107A JP4469054B2 (ja) | 2000-03-10 | 2000-03-10 | 誘導結合形プラズマ処理装置 |
| TW090104983A TWI247050B (en) | 2000-03-10 | 2001-03-05 | Inductively coupled plasma treatment apparatus |
| KR1020010011090A KR100778294B1 (ko) | 2000-03-10 | 2001-03-05 | 유도결합형 플라스마 처리장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000067107A JP4469054B2 (ja) | 2000-03-10 | 2000-03-10 | 誘導結合形プラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001254188A JP2001254188A (ja) | 2001-09-18 |
| JP2001254188A5 JP2001254188A5 (https=) | 2006-12-07 |
| JP4469054B2 true JP4469054B2 (ja) | 2010-05-26 |
Family
ID=18586350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000067107A Expired - Fee Related JP4469054B2 (ja) | 2000-03-10 | 2000-03-10 | 誘導結合形プラズマ処理装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4469054B2 (https=) |
| KR (1) | KR100778294B1 (https=) |
| TW (1) | TWI247050B (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040019608A (ko) * | 2002-08-28 | 2004-03-06 | 가부시키가이샤 히다치 하이테크놀로지즈 | 플라즈마처리장치 및 플라즈마처리방법 |
| US8356575B2 (en) * | 2005-09-09 | 2013-01-22 | Ulvac, Inc. | Ion source and plasma processing apparatus |
| JP5822133B2 (ja) * | 2011-12-22 | 2015-11-24 | サムコ株式会社 | 誘導結合形プラズマ処理装置のマスク部材 |
| JP6762026B2 (ja) * | 2016-08-17 | 2020-09-30 | サムコ株式会社 | 誘導結合型プラズマ処理装置 |
| JP6867686B2 (ja) * | 2017-06-30 | 2021-05-12 | 株式会社 セルバック | 接合装置 |
| JP7469625B2 (ja) * | 2020-04-13 | 2024-04-17 | 日新電機株式会社 | プラズマ源及びプラズマ処理装置 |
| JP7688258B2 (ja) * | 2021-08-04 | 2025-06-04 | 日新電機株式会社 | プラズマ処理装置 |
| JP2024067696A (ja) * | 2022-11-07 | 2024-05-17 | 日新電機株式会社 | プラズマ処理装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3371176B2 (ja) * | 1995-01-25 | 2003-01-27 | ソニー株式会社 | プラズマ処理装置および半導体装置の製造方法 |
| EP0831680A4 (en) * | 1996-03-28 | 2000-02-02 | Sumitomo Metal Ind | DEVICE AND METHOD FOR TREATING PLASMA |
| TW409487B (en) * | 1998-04-10 | 2000-10-21 | Sumitomo Metal Ind | Microwave plasma treatment apparatus and microwave plasma treatment method |
-
2000
- 2000-03-10 JP JP2000067107A patent/JP4469054B2/ja not_active Expired - Fee Related
-
2001
- 2001-03-05 KR KR1020010011090A patent/KR100778294B1/ko not_active Expired - Lifetime
- 2001-03-05 TW TW090104983A patent/TWI247050B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI247050B (en) | 2006-01-11 |
| JP2001254188A (ja) | 2001-09-18 |
| KR20010102839A (ko) | 2001-11-16 |
| KR100778294B1 (ko) | 2007-11-22 |
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