JP4464631B2 - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法 Download PDF

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Publication number
JP4464631B2
JP4464631B2 JP2003187828A JP2003187828A JP4464631B2 JP 4464631 B2 JP4464631 B2 JP 4464631B2 JP 2003187828 A JP2003187828 A JP 2003187828A JP 2003187828 A JP2003187828 A JP 2003187828A JP 4464631 B2 JP4464631 B2 JP 4464631B2
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Japan
Prior art keywords
etching
plasma
processing
gas
substrate
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JP2003187828A
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Japanese (ja)
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JP2004031970A5 (enExample
JP2004031970A (ja
Inventor
浩之 橘内
潤一 田中
敬 藤井
元彦 吉開
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Hitachi Ltd
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi Ltd
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Priority to JP2003187828A priority Critical patent/JP4464631B2/ja
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Publication of JP2004031970A5 publication Critical patent/JP2004031970A5/ja
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JP2003187828A 2003-06-30 2003-06-30 半導体素子の製造方法 Expired - Fee Related JP4464631B2 (ja)

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JP2003187828A JP4464631B2 (ja) 2003-06-30 2003-06-30 半導体素子の製造方法

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JP2003187828A JP4464631B2 (ja) 2003-06-30 2003-06-30 半導体素子の製造方法

Related Parent Applications (1)

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JP2001253099A Division JP2003068705A (ja) 2001-08-23 2001-08-23 半導体素子の製造方法

Publications (3)

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JP2004031970A JP2004031970A (ja) 2004-01-29
JP2004031970A5 JP2004031970A5 (enExample) 2007-01-11
JP4464631B2 true JP4464631B2 (ja) 2010-05-19

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JP2003187828A Expired - Fee Related JP4464631B2 (ja) 2003-06-30 2003-06-30 半導体素子の製造方法

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JP (1) JP4464631B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4101280B2 (ja) * 2006-07-28 2008-06-18 住友精密工業株式会社 終点検出可能なプラズマエッチング方法及びプラズマエッチング装置
DE102012200211A1 (de) * 2012-01-09 2013-07-11 Carl Zeiss Nts Gmbh Vorrichtung und Verfahren zur Oberflächenbearbeitung eines Substrates
JP2015032780A (ja) * 2013-08-06 2015-02-16 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP2015060934A (ja) * 2013-09-18 2015-03-30 株式会社日立ハイテクノロジーズ プラズマ処理方法
US10460988B2 (en) * 2017-12-21 2019-10-29 Tokyo Electron Limited Removal method and processing method
JP7231683B1 (ja) * 2021-08-30 2023-03-01 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム

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