JP4459591B2 - 発光ダイオードからの二次発光の制御方法 - Google Patents
発光ダイオードからの二次発光の制御方法 Download PDFInfo
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- JP4459591B2 JP4459591B2 JP2003351750A JP2003351750A JP4459591B2 JP 4459591 B2 JP4459591 B2 JP 4459591B2 JP 2003351750 A JP2003351750 A JP 2003351750A JP 2003351750 A JP2003351750 A JP 2003351750A JP 4459591 B2 JP4459591 B2 JP 4459591B2
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- 238000000034 method Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 28
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 14
- 238000005253 cladding Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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Description
しかしながら,最近では,この二次発光を積極的に利用し,例えばセンサの制御などに有効利用することが考えられている。かかる場合,二次発光の強度を制御できなければ,センサ本来の機能に悪影響を与えるので,二次発光を積極的に利用するにあたっては,二次発光の強度を任意に制御できるものでなければならならない。
しかしながら従来のように,二次発光の発生そのものを抑制する技術では,二次発光強度を任意の値に制御することは困難であった。
またp型活性層の厚みを変化させることによっても,二次発光強度を制御することができる。これは例えば活性層の厚みを減少させると,一次発光の活性層内での吸収が減り,基板側への光量が増加するためだと考えられる。
2 半導体基板
3 透過層
4 p型AlGaAs活性層
5 n型AlGaAsクラッド層
Claims (3)
- 半導体基板とその上に形成されたp型の活性層とn型のクラッド層とを備えたシングルへテロ構造の発光ダイオードにおいて,
前記p型の活性層と半導体基板との間に,前記p型活性層よりAl組成が高い透過層を形成し,少なくとも前記p型の活性層又は前記透過層の厚みを調整することによって,半導体基板の二次発光強度を制御することを特徴とする,発光ダイオードからの二次発光の制御方法。 - 前記半導体基板は,GaAs基板であり,
前記p型の活性層は,Al混晶比が0.15〜0.40でZnがドープされたp型AlGaAs活性層であり,
前記透過層は,Al混晶比0.40〜0.75でZnがドープされたp型AlGaAs層であり,
前記n型のクラッド層は,Al混晶比が0.45〜0.75でTeがドープされたn型AlGaAs層であることを特徴とする,請求項1に記載の発光ダイオードからの二次発光の制御方法。 - 前記p型の活性層の厚みは,30μm以下であり,
前記透過層の厚みは5〜100μmの範囲で,前記p型の活性層又は前記透過層の厚みを調整することにより、一次発光に対する二次発光の強度を0.2〜2.0%の間で制御することを特徴とする,請求項1又は2に記載の発光ダイオードからの二次発光の制御方法。
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JP2003351750A JP4459591B2 (ja) | 2003-10-10 | 2003-10-10 | 発光ダイオードからの二次発光の制御方法 |
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JP2003351750A JP4459591B2 (ja) | 2003-10-10 | 2003-10-10 | 発光ダイオードからの二次発光の制御方法 |
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JP2005116922A JP2005116922A (ja) | 2005-04-28 |
JP4459591B2 true JP4459591B2 (ja) | 2010-04-28 |
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JP2003351750A Expired - Lifetime JP4459591B2 (ja) | 2003-10-10 | 2003-10-10 | 発光ダイオードからの二次発光の制御方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009246056A (ja) * | 2008-03-30 | 2009-10-22 | Dowa Electronics Materials Co Ltd | 発光素子 |
JP4605291B2 (ja) * | 2008-06-03 | 2011-01-05 | 住友電気工業株式会社 | AlxGa(1−x)As基板、赤外LED用のエピタキシャルウエハ、赤外LED、AlxGa(1−x)As基板の製造方法、赤外LED用のエピタキシャルウエハの製造方法および赤外LEDの製造方法 |
JP5166153B2 (ja) | 2008-07-17 | 2013-03-21 | Dowaエレクトロニクス株式会社 | 発光素子 |
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