JP4444971B2 - 少なくとも第1の部材と第2の部材とを接合するための方法 - Google Patents
少なくとも第1の部材と第2の部材とを接合するための方法 Download PDFInfo
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- JP4444971B2 JP4444971B2 JP2006546869A JP2006546869A JP4444971B2 JP 4444971 B2 JP4444971 B2 JP 4444971B2 JP 2006546869 A JP2006546869 A JP 2006546869A JP 2006546869 A JP2006546869 A JP 2006546869A JP 4444971 B2 JP4444971 B2 JP 4444971B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Engineering & Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Joining Of Glass To Other Materials (AREA)
- Ceramic Products (AREA)
- Body Structure For Vehicles (AREA)
- Joining Of Building Structures In Genera (AREA)
- Adhesives Or Adhesive Processes (AREA)
Description
Claims (14)
- リソグラフィ装置の少なくとも一部分を形成するために用いられる少なくとも2つの部材を接合するための方法であって、
第1の部材を提供するステップと、
第2の部材を提供するステップと、
前記第1の部材と前記第2の部材とを互いに対して押圧して直接的に結合して、前記第1の部材および前記第2の部材を損傷させることなく分離可能な第1結合を形成するステップと、
前記第1の部材と前記第2の部材とを陽極結合するステップと
を含み、
前記第1および前記第2の部材のそれぞれが、0.1×10 −6 K −1 未満の熱膨張係数を有する超低膨張ガラスおよび0.1×10 −6 K −1 未満の熱膨張係数を有する超低膨張ガラス・セラミックスからなる群から選択される材料を含み、
前記第2の部材は、前記陽極結合において第1の電極として使用される導電層と、前記導電層上に設けられかつ前記第1結合を形成するための結合表面を提供する結合層とを含み、
前記結合層が、酸化物層を含む接合方法。 - 前記超低膨張ガラスが、1重量パーセント以上のチタン原子を含有する請求項1に記載の方法。
- 少なくとも前記第1の部材が、1016Ωcm未満の固有抵抗を有する材料を含む請求項1又は2に記載の方法。
- 前記熱膨張係数が0.02×10−6K−1未満である請求項1から3のいずれかに記載の方法。
- 前記第1の部材と前記第2の部材とがそれぞれ前記結合表面を備え、該結合表面は、前記第1および第2の部材の間に前記第1結合が得られるように接合され、また前記第1結合は、前記部材の前記陽極結合によって強化される請求項1から4のいずれかに記載の方法。
- 前記結合表面が、実質的に平坦な表面である請求項1から5のいずれかに記載の方法。
- 前記陽極結合が、
前記第1の電極とは反対の表面で、少なくとも前記第1の部材に少なくとも第2の電極を提供するステップと、
前記第1および第2の電極の間に電位差を印加して前記電極間にイオン電流を駆動し、陽極結合を形成するステップと
を含む請求項1から6のいずれかに記載の方法。 - 前記第1および第2の部材の間に得られる第1結合を少なくとも1つの不良について検査するステップと、
前記不良が見つかったとき、前記陽極結合の前に前記第1結合を切り離すステップと
をさらに含む請求項1から7のいずれかに記載の方法。 - 前記不良が、前記第1および第2の部材の間の位置合わせ不良と、粒子の存在と、ダストの存在とのうちの少なくとも1つを含む請求項8に記載の方法。
- 前記検査が光学的に行われる請求項8又は9のいずれかに記載の方法。
- 前記検査が干渉を使用して行われる請求項8から10のいずれかに記載の方法。
- 前記第1結合の前記切り離し後に前記不良を取り除くステップと、
前記第1および第2の部材を再び第1結合により結合するステップと
をさらに含む請求項8から11のいずれかに記載の方法。 - 前記少なくとも第1および第2の部材が接合されて、パターン形成構造を支持するための支持構造、基板支持体、投影システム、チャック、投影光学系、投影光学系ボックス、パターン形成構造、マスク、基板、ミラー、レンズ、およびシールドからなる群からの少なくとも1つのリソグラフィ装置部分の少なくとも一部分を形成する請求項1から12のいずれかに記載の方法。
- 少なくとも2つの部材を接合することにより、リソグラフィ装置用のチャックの少なくとも一部分を製造する方法であって、
第1の部材を提供するステップと、
第2の部材を提供するステップと、
前記第1の部材と前記第2の部材とを互いに対して押圧して直接的に結合して、前記第1の部材および前記第2の部材を損傷させることなく分離可能な第1結合を形成するステップと、
前記第1の部材と前記第2の部材とを陽極結合するステップと
を含み、
前記第1および前記第2の部材のそれぞれが、0.1×10 −6 K −1 未満の熱膨張係数を有する超低膨張ガラスおよび0.1×10 −6 K −1 未満の熱膨張係数を有する超低膨張ガラス・セラミックスからなる群から選択される材料を含み、
前記第2の部材は、前記陽極結合において第1の電極として使用される導電層と、前記導電層上に設けられかつ前記第1結合を形成するための結合表面を提供する結合層とを含み、
前記結合層が、酸化物層を含む方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/740,831 US8105457B2 (en) | 2003-12-22 | 2003-12-22 | Method for joining at least a first member and a second member, lithographic apparatus and device manufacturing method, as well as a device manufactured thereby |
PCT/NL2004/000898 WO2005062127A2 (en) | 2003-12-22 | 2004-12-22 | Method for joining at least two members |
Publications (2)
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JP2007523030A JP2007523030A (ja) | 2007-08-16 |
JP4444971B2 true JP4444971B2 (ja) | 2010-03-31 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006546869A Active JP4444971B2 (ja) | 2003-12-22 | 2004-12-22 | 少なくとも第1の部材と第2の部材とを接合するための方法 |
Country Status (7)
Country | Link |
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US (1) | US8105457B2 (ja) |
EP (1) | EP1697800B1 (ja) |
JP (1) | JP4444971B2 (ja) |
AT (1) | ATE366428T1 (ja) |
DE (1) | DE602004007409T2 (ja) |
TW (1) | TWI253102B (ja) |
WO (1) | WO2005062127A2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US7115182B2 (en) * | 2004-06-15 | 2006-10-03 | Agency For Science, Technology And Research | Anodic bonding process for ceramics |
CN102132209B (zh) * | 2008-08-21 | 2014-07-16 | Asml控股股份有限公司 | 具有高热传导率的euv掩模版基底 |
DE102009011863B4 (de) | 2009-03-05 | 2024-02-08 | Asml Netherlands B.V. | Leichtgewicht-Trägerstruktur, insbesondere für optische Bauteile, Verfahren zu deren Herstellung und Verwendung der Trägerstruktur |
WO2011149541A1 (en) * | 2010-05-28 | 2011-12-01 | Axcelis Technologies Inc. | Matched coefficient of thermal expansion for an electrostatic chuck |
EP2555234B1 (en) * | 2011-08-02 | 2020-08-19 | ASML Holding N.V. | Electrostatic clamp, lithographic apparatus and method of manufacturing an electrostatic clamp |
DE102011080635A1 (de) * | 2011-08-09 | 2013-02-14 | Carl Zeiss Smt Gmbh | Verfahren zum Verbinden von Komponenten und Verbundstruktur |
JP6526575B2 (ja) * | 2013-02-07 | 2019-06-05 | エーエスエムエル ホールディング エヌ.ブイ. | リソグラフィ装置及び方法 |
TWI656596B (zh) | 2014-08-26 | 2019-04-11 | 荷蘭商Asml控股公司 | 靜電夾具及其製造方法 |
KR20210124997A (ko) * | 2019-02-13 | 2021-10-15 | 에이에스엠엘 홀딩 엔.브이. | 기계적 인터페이스를 위한 중간층 |
DE102019217389A1 (de) * | 2019-10-18 | 2021-04-22 | Carl Zeiss Smt Gmbh | Verfahren zum Verbinden eines Anbauteils mit einem Grundkörper eines optischen Elements und optisches Element |
GB202212686D0 (en) * | 2022-08-31 | 2022-10-12 | Smart Photonics Holding B V | Method of providing a wafer |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US4924701A (en) * | 1988-09-06 | 1990-05-15 | Panex Corporation | Pressure measurement system |
JP2714860B2 (ja) * | 1989-07-28 | 1998-02-16 | 東芝セラミックス株式会社 | 半導体巣結晶引上げ用石英ガラスルツボ |
JP2933404B2 (ja) * | 1990-06-25 | 1999-08-16 | 信越石英 株式会社 | シリコン単結晶引き上げ用石英ガラスルツボとその製造方法 |
US5306473A (en) * | 1992-01-31 | 1994-04-26 | Toshiba Ceramics Co., Ltd. | Quartz glass crucible for pulling a single crystal |
US5441591A (en) * | 1993-06-07 | 1995-08-15 | The United States Of America As Represented By The Secretary Of The Navy | Silicon to sapphire bond |
US5980629A (en) * | 1995-06-14 | 1999-11-09 | Memc Electronic Materials, Inc. | Methods for improving zero dislocation yield of single crystals |
JP4285788B2 (ja) * | 1996-03-14 | 2009-06-24 | 信越石英株式会社 | 単結晶引き上げ用大口径石英るつぼの製造方法 |
DE19719133C2 (de) * | 1997-05-07 | 1999-09-02 | Heraeus Quarzglas | Glocke aus Quarzglas und Verfahren für ihre Herstellung |
DE19917288C2 (de) * | 1999-04-16 | 2001-06-28 | Heraeus Quarzglas | Quarzglas-Tiegel |
US6814833B2 (en) * | 2001-10-26 | 2004-11-09 | Corning Incorporated | Direct bonding of articles containing silicon |
EP1359466A1 (en) * | 2002-05-01 | 2003-11-05 | ASML Netherlands B.V. | Chuck, lithographic projection apparatus, method of manufacturing a chuck and device manufacturing method |
EP1359469B1 (en) | 2002-05-01 | 2011-03-02 | ASML Netherlands B.V. | Chuck, lithographic projection apparatus and device manufacturing method |
-
2003
- 2003-12-22 US US10/740,831 patent/US8105457B2/en active Active
-
2004
- 2004-12-21 TW TW093139862A patent/TWI253102B/zh active
- 2004-12-22 AT AT04808814T patent/ATE366428T1/de not_active IP Right Cessation
- 2004-12-22 DE DE602004007409T patent/DE602004007409T2/de active Active
- 2004-12-22 WO PCT/NL2004/000898 patent/WO2005062127A2/en active IP Right Grant
- 2004-12-22 EP EP04808814A patent/EP1697800B1/en active Active
- 2004-12-22 JP JP2006546869A patent/JP4444971B2/ja active Active
Also Published As
Publication number | Publication date |
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ATE366428T1 (de) | 2007-07-15 |
WO2005062127A3 (en) | 2006-01-05 |
EP1697800A2 (en) | 2006-09-06 |
EP1697800B1 (en) | 2007-07-04 |
US20050132750A1 (en) | 2005-06-23 |
DE602004007409T2 (de) | 2008-03-06 |
JP2007523030A (ja) | 2007-08-16 |
TWI253102B (en) | 2006-04-11 |
DE602004007409D1 (de) | 2007-08-16 |
WO2005062127A2 (en) | 2005-07-07 |
US8105457B2 (en) | 2012-01-31 |
TW200535924A (en) | 2005-11-01 |
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