JP4441134B2 - 静電アクチュエーター及びミラーアレイ - Google Patents
静電アクチュエーター及びミラーアレイ Download PDFInfo
- Publication number
- JP4441134B2 JP4441134B2 JP2001032665A JP2001032665A JP4441134B2 JP 4441134 B2 JP4441134 B2 JP 4441134B2 JP 2001032665 A JP2001032665 A JP 2001032665A JP 2001032665 A JP2001032665 A JP 2001032665A JP 4441134 B2 JP4441134 B2 JP 4441134B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- movable beam
- pair
- drive
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010410 layer Substances 0.000 description 73
- 239000010408 film Substances 0.000 description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 52
- 229910052710 silicon Inorganic materials 0.000 description 52
- 239000010703 silicon Substances 0.000 description 52
- 239000000758 substrate Substances 0.000 description 41
- 238000004519 manufacturing process Methods 0.000 description 34
- 238000000034 method Methods 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 229910052814 silicon oxide Inorganic materials 0.000 description 24
- 238000006073 displacement reaction Methods 0.000 description 19
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 229920001721 polyimide Polymers 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000009616 inductively coupled plasma Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Images
Landscapes
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001032665A JP4441134B2 (ja) | 2001-02-08 | 2001-02-08 | 静電アクチュエーター及びミラーアレイ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001032665A JP4441134B2 (ja) | 2001-02-08 | 2001-02-08 | 静電アクチュエーター及びミラーアレイ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002236263A JP2002236263A (ja) | 2002-08-23 |
| JP2002236263A5 JP2002236263A5 (enExample) | 2008-03-06 |
| JP4441134B2 true JP4441134B2 (ja) | 2010-03-31 |
Family
ID=18896547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001032665A Expired - Fee Related JP4441134B2 (ja) | 2001-02-08 | 2001-02-08 | 静電アクチュエーター及びミラーアレイ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4441134B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100630029B1 (ko) * | 2002-11-06 | 2006-09-27 | 마츠시타 덴끼 산교 가부시키가이샤 | 변위 검출 기능을 구비한 마이크로 액츄에이터, 및 당해마이크로 액츄에이터를 구비한 가변형 미러 |
| CN100405122C (zh) * | 2002-11-06 | 2008-07-23 | 松下电器产业株式会社 | 带有位移检测功能的微执行器 |
| US7068409B2 (en) * | 2004-03-31 | 2006-06-27 | Lucent Technologies Inc. | Tip-tilt-piston actuator |
| US7797757B2 (en) * | 2006-08-15 | 2010-09-14 | Georgia Tech Research Corporation | Cantilevers with integrated actuators for probe microscopy |
| JP4979027B2 (ja) * | 2009-02-10 | 2012-07-18 | 日本電信電話株式会社 | Mems素子の製造方法およびmems素子 |
| JP5180161B2 (ja) * | 2009-08-03 | 2013-04-10 | 日本電信電話株式会社 | マイクロメカニカル構造体およびその製造方法 |
-
2001
- 2001-02-08 JP JP2001032665A patent/JP4441134B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002236263A (ja) | 2002-08-23 |
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