JP4424965B2 - 不揮発性メモリシステム内においてアウトオブシーケンス書き込みプロセスを効果的に可能にするための方法および装置 - Google Patents

不揮発性メモリシステム内においてアウトオブシーケンス書き込みプロセスを効果的に可能にするための方法および装置 Download PDF

Info

Publication number
JP4424965B2
JP4424965B2 JP2003366723A JP2003366723A JP4424965B2 JP 4424965 B2 JP4424965 B2 JP 4424965B2 JP 2003366723 A JP2003366723 A JP 2003366723A JP 2003366723 A JP2003366723 A JP 2003366723A JP 4424965 B2 JP4424965 B2 JP 4424965B2
Authority
JP
Japan
Prior art keywords
logical
unit
content
physical
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003366723A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004164633A5 (zh
JP2004164633A (ja
Inventor
シー． チャン ロバート
クァワミ バーマン
サベット−シャーギ ファーシッド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of JP2004164633A publication Critical patent/JP2004164633A/ja
Publication of JP2004164633A5 publication Critical patent/JP2004164633A5/ja
Application granted granted Critical
Publication of JP4424965B2 publication Critical patent/JP4424965B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
JP2003366723A 2002-10-28 2003-10-27 不揮発性メモリシステム内においてアウトオブシーケンス書き込みプロセスを効果的に可能にするための方法および装置 Expired - Fee Related JP4424965B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42172502P 2002-10-28 2002-10-28

Publications (3)

Publication Number Publication Date
JP2004164633A JP2004164633A (ja) 2004-06-10
JP2004164633A5 JP2004164633A5 (zh) 2006-11-30
JP4424965B2 true JP4424965B2 (ja) 2010-03-03

Family

ID=32094172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003366723A Expired - Fee Related JP4424965B2 (ja) 2002-10-28 2003-10-27 不揮発性メモリシステム内においてアウトオブシーケンス書き込みプロセスを効果的に可能にするための方法および装置

Country Status (5)

Country Link
US (1) US7526599B2 (zh)
EP (1) EP1416386A3 (zh)
JP (1) JP4424965B2 (zh)
KR (1) KR100977899B1 (zh)
CN (1) CN100538659C (zh)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7108975B2 (en) * 2001-09-21 2006-09-19 Regents Of The University Of Michigan Atlastin
TWI232466B (en) * 2003-10-28 2005-05-11 Prolific Technology Inc Method for updating data of non-volatile memory
US7139864B2 (en) * 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
US7383375B2 (en) 2003-12-30 2008-06-03 Sandisk Corporation Data run programming
US7433993B2 (en) 2003-12-30 2008-10-07 San Disk Corportion Adaptive metablocks
TW200608201A (en) * 2004-04-28 2006-03-01 Matsushita Electric Ind Co Ltd Nonvolatile storage device and data write method
TWI254205B (en) * 2004-11-01 2006-05-01 Benq Corp Bidirectional data storing method
US8341371B2 (en) * 2005-01-31 2012-12-25 Sandisk Il Ltd Method of managing copy operations in flash memories
US20060184718A1 (en) * 2005-02-16 2006-08-17 Sinclair Alan W Direct file data programming and deletion in flash memories
US7877539B2 (en) 2005-02-16 2011-01-25 Sandisk Corporation Direct data file storage in flash memories
US9104315B2 (en) * 2005-02-04 2015-08-11 Sandisk Technologies Inc. Systems and methods for a mass data storage system having a file-based interface to a host and a non-file-based interface to secondary storage
US20060184719A1 (en) * 2005-02-16 2006-08-17 Sinclair Alan W Direct data file storage implementation techniques in flash memories
US7627733B2 (en) * 2005-08-03 2009-12-01 Sandisk Corporation Method and system for dual mode access for storage devices
US7949845B2 (en) * 2005-08-03 2011-05-24 Sandisk Corporation Indexing of file data in reprogrammable non-volatile memories that directly store data files
US7480766B2 (en) 2005-08-03 2009-01-20 Sandisk Corporation Interfacing systems operating through a logical address space and on a direct data file basis
US7558906B2 (en) * 2005-08-03 2009-07-07 Sandisk Corporation Methods of managing blocks in nonvolatile memory
US7984084B2 (en) * 2005-08-03 2011-07-19 SanDisk Technologies, Inc. Non-volatile memory with scheduled reclaim operations
US7552271B2 (en) * 2005-08-03 2009-06-23 Sandisk Corporation Nonvolatile memory with block management
EP1913463A2 (en) * 2005-08-03 2008-04-23 SanDisk Corporation Management of memory blocks which directly store data files
US7669003B2 (en) * 2005-08-03 2010-02-23 Sandisk Corporation Reprogrammable non-volatile memory systems with indexing of directly stored data files
JP4661497B2 (ja) * 2005-09-27 2011-03-30 Ｔｄｋ株式会社 メモリコントローラ、フラッシュメモリシステム及びフラッシュメモリの制御方法
US7529905B2 (en) * 2005-10-13 2009-05-05 Sandisk Corporation Method of storing transformed units of data in a memory system having fixed sized storage blocks
US7814262B2 (en) * 2005-10-13 2010-10-12 Sandisk Corporation Memory system storing transformed units of data in fixed sized storage blocks
US20070136671A1 (en) * 2005-12-12 2007-06-14 Buhrke Eric R Method and system for directing attention during a conversation
US7747837B2 (en) 2005-12-21 2010-06-29 Sandisk Corporation Method and system for accessing non-volatile storage devices
US7793068B2 (en) * 2005-12-21 2010-09-07 Sandisk Corporation Dual mode access for non-volatile storage devices
US7769978B2 (en) 2005-12-21 2010-08-03 Sandisk Corporation Method and system for accessing non-volatile storage devices
TW200732913A (en) * 2006-02-24 2007-09-01 Benq Corp Memory allocation method and system
US7971071B2 (en) * 2006-05-24 2011-06-28 Walkoe Wilbur J Integrated delivery and protection device for digital objects
EP1873641B1 (en) * 2006-06-29 2009-08-19 Incard SA Compression method for managing the storing of persistent data from a non volatile memory to a backup buffer
US8046522B2 (en) * 2006-12-26 2011-10-25 SanDisk Technologies, Inc. Use of a direct data file system with a continuous logical address space interface and control of file address storage in logical blocks
US7739444B2 (en) * 2006-12-26 2010-06-15 Sandisk Corporation System using a direct data file system with a continuous logical address space interface
JP5083757B2 (ja) * 2007-04-19 2012-11-28 インターナショナル・ビジネス・マシーンズ・コーポレーション データをキャッシュする技術
KR101270685B1 (ko) * 2007-08-24 2013-06-03 삼성전자주식회사 비휘발성 메모리의 데이터 처리 장치 및 방법
JP4210318B1 (ja) * 2007-11-28 2009-01-14 株式会社京都ソフトウェアリサーチ データ格納システムおよびデータ格納プログラム
TWI425523B (zh) * 2008-03-25 2014-02-01 Asmedia Technology Inc 混合型快閃儲存裝置及其操作方法
TWI413984B (zh) * 2008-10-16 2013-11-01 Silicon Motion Inc 快閃記憶體裝置以及資料更新方法
KR101574540B1 (ko) * 2009-04-15 2015-12-07 삼성전자주식회사 데이터 저장 장치 및 이를 포함하는 데이터 저장 시스템
WO2010134300A1 (ja) * 2009-05-21 2010-11-25 パナソニック株式会社 メモリコントローラ、不揮発性記憶装置、アクセス装置、不揮発性記憶システム、データ書き込み方法、および、プログラム
US8473669B2 (en) * 2009-12-07 2013-06-25 Sandisk Technologies Inc. Method and system for concurrent background and foreground operations in a non-volatile memory array
US8266325B2 (en) * 2010-02-05 2012-09-11 International Business Machines Corporation Compression on thin provisioned volumes using extent based mapping
US8880783B2 (en) * 2011-07-05 2014-11-04 Kandou Labs SA Differential vector storage for non-volatile memory
US9104546B2 (en) * 2010-05-24 2015-08-11 Silicon Motion Inc. Method for performing block management using dynamic threshold, and associated memory device and controller thereof
CN103577330B (zh) * 2012-07-27 2018-09-11 中兴通讯股份有限公司 一种内容存储方法及装置
US9268682B2 (en) * 2012-10-05 2016-02-23 Skyera, Llc Methods, devices and systems for physical-to-logical mapping in solid state drives
US20140281194A1 (en) 2013-03-15 2014-09-18 Seagate Technology Llc Dynamically-sizeable granule storage
CN105339902B (zh) * 2013-07-31 2018-11-20 慧与发展有限责任合伙企业 用于版本化存储器实现的方法、装置和计算机可读介质
US9645924B2 (en) 2013-12-16 2017-05-09 International Business Machines Corporation Garbage collection scaling
US10114562B2 (en) 2014-09-16 2018-10-30 Sandisk Technologies Llc Adaptive block allocation in nonvolatile memory
US9778864B2 (en) * 2015-03-10 2017-10-03 SK Hynix Inc. Data storage device using non-sequential segment access and operating method thereof
US9817593B1 (en) 2016-07-11 2017-11-14 Sandisk Technologies Llc Block management in non-volatile memory system with non-blocking control sync system
US10359955B2 (en) * 2017-02-23 2019-07-23 Western Digital Technologies, Inc. Data storage device configured to perform a non-blocking control update operation
US20180239532A1 (en) 2017-02-23 2018-08-23 Western Digital Technologies, Inc. Techniques for performing a non-blocking control sync operation
US11294827B2 (en) 2019-09-12 2022-04-05 Western Digital Technologies, Inc. Non-sequential zoned namespaces
US11816349B2 (en) 2021-11-03 2023-11-14 Western Digital Technologies, Inc. Reduce command latency using block pre-erase

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2685173B2 (ja) 1986-05-31 1997-12-03 キヤノン株式会社 メモリ書き込み制御方法
JPH07109717B2 (ja) 1986-05-31 1995-11-22 キヤノン株式会社 メモリ書き込み制御方法
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
DE69033262T2 (de) * 1989-04-13 2000-02-24 Sandisk Corp., Santa Clara EEPROM-Karte mit Austauch von fehlerhaften Speicherzellen und Zwischenspeicher
US5222109A (en) * 1990-12-28 1993-06-22 Ibm Corporation Endurance management for solid state files
US5438573A (en) * 1991-09-13 1995-08-01 Sundisk Corporation Flash EEPROM array data and header file structure
US6230233B1 (en) * 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
JP3105092B2 (ja) * 1992-10-06 2000-10-30 株式会社東芝 半導体メモリ装置
JP2856621B2 (ja) * 1993-02-24 1999-02-10 インターナショナル・ビジネス・マシーンズ・コーポレイション 一括消去型不揮発性メモリおよびそれを用いる半導体ディスク装置
US5388083A (en) * 1993-03-26 1995-02-07 Cirrus Logic, Inc. Flash memory mass storage architecture
US5488711A (en) * 1993-04-01 1996-01-30 Microchip Technology Incorporated Serial EEPROM device and associated method for reducing data load time using a page mode write cache
US5603001A (en) * 1994-05-09 1997-02-11 Kabushiki Kaisha Toshiba Semiconductor disk system having a plurality of flash memories
JP3507132B2 (ja) * 1994-06-29 2004-03-15 株式会社日立製作所 フラッシュメモリを用いた記憶装置およびその記憶制御方法
US5568423A (en) * 1995-04-14 1996-10-22 Unisys Corporation Flash memory wear leveling system providing immediate direct access to microprocessor
US5930815A (en) 1995-07-31 1999-07-27 Lexar Media, Inc. Moving sequential sectors within a block of information in a flash memory mass storage architecture
US5845313A (en) * 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US6125435A (en) * 1995-09-13 2000-09-26 Lexar Media, Inc. Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
US5835935A (en) * 1995-09-13 1998-11-10 Lexar Media, Inc. Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory
JPH09185551A (ja) * 1996-01-08 1997-07-15 Mitsubishi Electric Corp 半導体記憶装置
US5860082A (en) * 1996-03-28 1999-01-12 Datalight, Inc. Method and apparatus for allocating storage in a flash memory
US5754567A (en) * 1996-10-15 1998-05-19 Micron Quantum Devices, Inc. Write reduction in flash memory systems through ECC usage
US5832493A (en) * 1997-04-24 1998-11-03 Trimble Navigation Limited Flash file management system
US6000006A (en) * 1997-08-25 1999-12-07 Bit Microsystems, Inc. Unified re-map and cache-index table with dual write-counters for wear-leveling of non-volatile flash RAM mass storage
JPH11203191A (ja) * 1997-11-13 1999-07-30 Seiko Epson Corp 不揮発性記憶装置、不揮発性記憶装置の制御方法、および、不揮発性記憶装置を制御するプログラムを記録した情報記録媒体
US6182239B1 (en) * 1998-02-06 2001-01-30 Stmicroelectronics, Inc. Fault-tolerant codes for multi-level memories
KR100297986B1 (ko) * 1998-03-13 2001-10-25 김영환 플래쉬 메모리 셀 어레이의 웨어 레벨링 시스템 및 웨어 레벨링 방법
US6260156B1 (en) * 1998-12-04 2001-07-10 Datalight, Inc. Method and system for managing bad areas in flash memory
KR100330164B1 (ko) * 1999-04-27 2002-03-28 윤종용 무효 블록들을 가지는 복수의 플래시 메모리들을 동시에 프로그램하는 방법
US6426893B1 (en) * 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
JP2002175211A (ja) * 2000-12-07 2002-06-21 Sharp Corp データ管理システムおよびデータ管理方法
US6970890B1 (en) * 2000-12-20 2005-11-29 Bitmicro Networks, Inc. Method and apparatus for data recovery

Also Published As

Publication number Publication date
KR100977899B1 (ko) 2010-08-24
JP2004164633A (ja) 2004-06-10
EP1416386A3 (en) 2006-10-25
KR20040038706A (ko) 2004-05-08
CN100538659C (zh) 2009-09-09
US20040103241A1 (en) 2004-05-27
US7526599B2 (en) 2009-04-28
EP1416386A2 (en) 2004-05-06
CN1499530A (zh) 2004-05-26

Similar Documents

Publication Publication Date Title
JP4424965B2 (ja) 不揮発性メモリシステム内においてアウトオブシーケンス書き込みプロセスを効果的に可能にするための方法および装置
JP5005171B2 (ja) 論理ブロックをスプリットする方法および装置
US7254668B1 (en) Method and apparatus for grouping pages within a block
US7174440B2 (en) Method and apparatus for performing block caching in a non-volatile memory system
US5953737A (en) Method and apparatus for performing erase operations transparent to a solid state storage system
EP3133604B1 (en) Method and device for fail-safe erase of flash memory
US20100011153A1 (en) Block management method, and storage system and controller using the same
US20090198875A1 (en) Data writing method for flash memory, and controller and system using the same
US20200089619A1 (en) Data storage device and method of deleting namespace thereof
US11513949B2 (en) Storage device, and control method and recording medium thereof
US8667210B2 (en) Memory management method, memory controller and memory storage apparatus
US9213631B2 (en) Data processing method, and memory controller and memory storage device using the same
US20100042775A1 (en) Block management method for flash memory, and storage system and controller using the same
US9009442B2 (en) Data writing method, memory controller and memory storage apparatus
CN106445401B (zh) 表格更新方法、存储器储存装置及存储器控制电路单元
US11755242B2 (en) Data merging method, memory storage device for updating copied L2P mapping table according to the physical address of physical unit
KR20020092261A (ko) 멀티-플레인 구조의 플래시 메모리 관리 방법
US7234036B1 (en) Method and apparatus for resolving physical blocks associated with a common logical block
US9710374B2 (en) Data writing method, memory controller and memory storage device
WO2004040454A2 (en) Method and apparatus for performing multi-page write operations in a non-volatile memory system
US20080109588A1 (en) Memory Card and Method of Driving the Same
KR20220101349A (ko) 스토리지 장치의 데이터 기입 방법 및 이를 수행하는 스토리지 장치

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061013

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061013

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091116

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091118

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091208

R150 Certificate of patent or registration of utility model

Ref document number: 4424965

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121218

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121218

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121218

Year of fee payment: 3

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121218

Year of fee payment: 3

R370 Written measure of declining of transfer procedure

Free format text: JAPANESE INTERMEDIATE CODE: R370

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121218

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121218

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131218

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees