JP4418634B2 - 化合物、該化合物を含有するポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法 - Google Patents

化合物、該化合物を含有するポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法 Download PDF

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JP4418634B2
JP4418634B2 JP2003027161A JP2003027161A JP4418634B2 JP 4418634 B2 JP4418634 B2 JP 4418634B2 JP 2003027161 A JP2003027161 A JP 2003027161A JP 2003027161 A JP2003027161 A JP 2003027161A JP 4418634 B2 JP4418634 B2 JP 4418634B2
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JP2004238304A (ja
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亨 藤森
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Fujifilm Corp
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JP2003027161A 2003-02-04 2003-02-04 化合物、該化合物を含有するポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法 Expired - Fee Related JP4418634B2 (ja)

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JP2003027161A JP4418634B2 (ja) 2003-02-04 2003-02-04 化合物、該化合物を含有するポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法

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JP2003027161A JP4418634B2 (ja) 2003-02-04 2003-02-04 化合物、該化合物を含有するポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法

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JP2004238304A JP2004238304A (ja) 2004-08-26
JP2004238304A5 JP2004238304A5 (enExample) 2005-09-22
JP4418634B2 true JP4418634B2 (ja) 2010-02-17

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Publication number Priority date Publication date Assignee Title
TWI368825B (en) 2004-07-07 2012-07-21 Fujifilm Corp Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
JP4740666B2 (ja) * 2004-07-07 2011-08-03 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4181760B2 (ja) * 2000-06-09 2008-11-19 富士フイルム株式会社 ポジ型フォトレジスト組成物
JP2002169293A (ja) * 2000-12-05 2002-06-14 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
JP4243029B2 (ja) * 2001-02-05 2009-03-25 富士フイルム株式会社 ポジ型化学増幅レジスト組成物

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