JP4409196B2 - 半導体装置及びそれを用いた表示装置、並びに半導体装置の作製方法 - Google Patents
半導体装置及びそれを用いた表示装置、並びに半導体装置の作製方法 Download PDFInfo
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- JP4409196B2 JP4409196B2 JP2003105028A JP2003105028A JP4409196B2 JP 4409196 B2 JP4409196 B2 JP 4409196B2 JP 2003105028 A JP2003105028 A JP 2003105028A JP 2003105028 A JP2003105028 A JP 2003105028A JP 4409196 B2 JP4409196 B2 JP 4409196B2
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- Prior art keywords
- film
- opening
- insulating film
- nitride insulating
- positive photosensitive
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- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 40
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
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- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
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- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
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- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
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- NLSXASIDNWDYMI-UHFFFAOYSA-N triphenylsilanol Chemical group C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(O)C1=CC=CC=C1 NLSXASIDNWDYMI-UHFFFAOYSA-N 0.000 description 1
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- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003105028A JP4409196B2 (ja) | 2002-04-09 | 2003-04-09 | 半導体装置及びそれを用いた表示装置、並びに半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002107197 | 2002-04-09 | ||
| JP2003105028A JP4409196B2 (ja) | 2002-04-09 | 2003-04-09 | 半導体装置及びそれを用いた表示装置、並びに半導体装置の作製方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009140919A Division JP4515528B2 (ja) | 2002-04-09 | 2009-06-12 | 半導体装置 |
| JP2009239128A Division JP4652470B2 (ja) | 2002-04-09 | 2009-10-16 | 表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004006796A JP2004006796A (ja) | 2004-01-08 |
| JP2004006796A5 JP2004006796A5 (enExample) | 2007-09-20 |
| JP4409196B2 true JP4409196B2 (ja) | 2010-02-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003105028A Expired - Fee Related JP4409196B2 (ja) | 2002-04-09 | 2003-04-09 | 半導体装置及びそれを用いた表示装置、並びに半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4409196B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7977678B2 (en) * | 2007-12-21 | 2011-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| WO2013073084A1 (ja) * | 2011-11-16 | 2013-05-23 | パナソニック株式会社 | 表示パネルの製造方法および表示パネル |
| KR20250131267A (ko) * | 2012-07-20 | 2025-09-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| JP6367655B2 (ja) * | 2013-09-13 | 2018-08-01 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI553388B (zh) * | 2014-09-11 | 2016-10-11 | 群創光電股份有限公司 | 液晶顯示裝置及其元件基板 |
| CN104597640B (zh) * | 2015-02-12 | 2017-06-27 | 深圳市华星光电技术有限公司 | 阵列基板及其断线修补方法 |
| CN116154003A (zh) | 2015-11-20 | 2023-05-23 | 株式会社半导体能源研究所 | 半导体装置、包括该半导体装置的显示装置以及包括该半导体装置的电子设备 |
| WO2021130592A1 (ja) * | 2019-12-27 | 2021-07-01 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
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- 2003-04-09 JP JP2003105028A patent/JP4409196B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004006796A (ja) | 2004-01-08 |
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| JP4409196B2 (ja) | 半導体装置及びそれを用いた表示装置、並びに半導体装置の作製方法 |
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