JP4406553B2 - Method for manufacturing antireflection film - Google Patents
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- JP4406553B2 JP4406553B2 JP2003392119A JP2003392119A JP4406553B2 JP 4406553 B2 JP4406553 B2 JP 4406553B2 JP 2003392119 A JP2003392119 A JP 2003392119A JP 2003392119 A JP2003392119 A JP 2003392119A JP 4406553 B2 JP4406553 B2 JP 4406553B2
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Description
本発明は、高分子膜（フィルム）の表面に形成され、可視光域における反射を低減させる反射防止層（反射防止膜）の製造方法に関する。 The present invention is formed on the surface of the polymer film (film), for producing how the antireflection layer (antireflection film) for reducing the reflection in the visible light region.
様々な情報機器用表示装置において、高分子フィルムが広く用いられているが、良好な視認性を確保するためには、反射光を抑制するための反射防止層の形成が必要とされる。通常，反射防止層としては，異なる屈折率からなる誘電体から構成される多層膜が用いられているが、誘電体層の形成には、真空蒸着法、あるいはスパッタ法が用いられており、反射層形成には、高価な装置と多大な作製時間を必要とするという問題点があった。 In various display devices for information equipment, polymer films are widely used. However, in order to ensure good visibility, it is necessary to form an antireflection layer for suppressing reflected light. Usually, a multilayer film composed of dielectrics having different refractive indexes is used as the antireflection layer. However, a vacuum deposition method or a sputtering method is used to form the dielectric layer, and the reflection layer The layer formation has a problem of requiring an expensive apparatus and a great production time.
一方、高分子フィルムの表面に突起状の形状を付与し、屈折率が連続的に変化する層を形成することにより反射率を低減する方式が知られている。高分子フィルムに突起形状を付与するためには、通常、突起形状に対応した窪み配列を有するスタンパを用意し、これをもとに高分子フィルムを加工する方法が用いられている。 On the other hand, a method is known in which the reflectance is reduced by providing a protrusion-like shape on the surface of the polymer film and forming a layer whose refractive index continuously changes. In order to impart a protrusion shape to the polymer film, a method is generally used in which a stamper having a depression array corresponding to the protrusion shape is prepared and the polymer film is processed based on the stamper.
高分子フィルムの表面に突起形状を形成するためのスタンパに形成する窪みは、光の波長に比較して微細な周期を有し、可視光域で反射率を十分減衰させるためには、波長の１／４程度の深さを有することが必要とされる（たとえば、特許文献１）。このとき、窪みは、屈折率を連続的に変化させる必要があることから、テーパー形状を有することが必要とされる。 The depression formed in the stamper for forming the protrusion shape on the surface of the polymer film has a fine period compared to the wavelength of light, and in order to sufficiently attenuate the reflectance in the visible light region, It is necessary to have a depth of about 1/4 (for example, Patent Document 1). At this time, the recess needs to have a tapered shape because it is necessary to continuously change the refractive index.
このような条件を満たす窪み配列の形成のため、電子ビームリソグラフィー、あるいは光露光法によるパターニングとＳｉに代表される半導体単結晶の異方性エッチングを組み合わせる手法が一般に用いられている。これは、所望の周期の開口を各種リソグラフィーで形成した後、湿式あるいは乾式エッチング法によりテーパー形状の孔を形成するものである。リソグラフィー法として、電子ビームリソグラフィーは十分に微細な周期のパターンニングが可能であるが、加工に多大な時間と高価な装置が必要とされる。光露光法では、レーザー光の干渉を用いることでパターンを形成する方法が用いられるが、十分に微細な周期の構造を形成することは困難である。 In order to form a hollow array that satisfies such conditions, a technique that combines electron beam lithography or patterning by light exposure and anisotropic etching of a semiconductor single crystal typified by Si is generally used. In this method, an opening having a desired period is formed by various lithography, and then a tapered hole is formed by a wet or dry etching method. As a lithography method, electron beam lithography is capable of patterning with a sufficiently fine period, but requires a great deal of time and an expensive apparatus for processing. In the light exposure method, a method of forming a pattern by using interference of laser light is used, but it is difficult to form a structure having a sufficiently fine period.
微細なパターンを形成する手法として、規則的な細孔配列を有する陽極酸化ポーラスアルミナを用いる方法が提案されている（たとえば、非特許文献１）。この方法では，規則的な細孔配列を有する陽極酸化ポーラスアルミナをマスクとし、反応性イオンエッチングを施すことによりＳｉ基板に窪みを形成する。このようにして形成された窪み配列を鋳型とし，高分子に同様の構造を形成する手法は容易に類推し得るが、この方法においては、無反射層形成に必須なテーパー形状の形成は困難であった。 As a method for forming a fine pattern, a method using anodized porous alumina having a regular pore arrangement has been proposed (for example, Non-Patent Document 1). In this method, a recess is formed in the Si substrate by performing reactive ion etching using anodized porous alumina having a regular pore arrangement as a mask. The method of forming a similar structure in a polymer using the hollow array formed in this way as a template can be easily analogized, but in this method, it is difficult to form a tapered shape that is essential for the formation of a non-reflective layer. there were.
これらの他、陽極酸化ポーラスアルミナの多孔質構造にエッチングを施し、これをもとにスタンパを作製する方法が提案されているが（たとえば、特許文献１）、陽極酸化ポーラスアルミナの細孔形状は円柱状であるので、単にこれをもとに反射防止膜に必要な制御されたテーパー形状を有する突起形状を高分子フィルムに形成することは困難である。
上記のように、リソグラフィーを用いる方法では、大面積を加工可能なスタンパを安価に製造することは困難であり、またテーパー形状を制御することは困難であった。また、陽極酸化ポーラスアルミナを用いる手法においても、無反射層形成に必須な最適なテーパー形状を形成するのが困難であるという問題点を有していた。 As described above, in the method using lithography, it is difficult to inexpensively manufacture a stamper capable of processing a large area, and it is difficult to control the taper shape. Also, the method using anodized porous alumina has a problem that it is difficult to form an optimum tapered shape essential for forming a non-reflective layer.
そこで本発明の課題は、上記従来技術における問題点を解決するために、陽極酸化ポーラスアルミナを鋳型として、高分子フィルム面に所望の反射防止膜を形成可能な反射防止膜の製造方法を提供することにある。 Accordingly, an object of the present invention is provided to solve the above-mentioned problems occurring in the prior art, an anodized porous alumina as a template, the manufacturing how the desired anti-reflection film capable of forming a reflection preventing film on the polymer film surface There is to do.
上記課題を解決するために、本発明は、陽極酸化と孔径拡大処理を組み合わせることで、連続的に細孔径が変化したテーパー形状を付与した陽極酸化ポーラスアルミナを鋳型として用いることで無反射高分子フィルムの作製を可能にするものである。すなわち、本発明に係る反射防止膜の製造方法は、高分子膜の表面に凹凸を形成し、屈折率を連続的に変化させることで反射を低減させる反射防止膜の製造方法であって、前記凹凸の形成に、（ａ）前記凹凸を構造転写により形成可能な細孔を表面に有する陽極酸化ポーラスアルミナであって、陽極酸化と孔径拡大処理を交互に繰り返すことで、該細孔を細孔径が変化するテーパー形状の孔とした陽極酸化ポーラスアルミナを鋳型として、あるいは（ｂ）該陽極酸化ポーラスアルミナを鋳型として作製したスタンパを鋳型として、用いることを特徴とする方法からなる。 In order to solve the above-mentioned problems, the present invention provides a non-reflective polymer by using anodized porous alumina having a tapered shape with continuously changing pore diameter as a template by combining anodization and pore diameter expansion treatment. This makes it possible to produce a film. That is, the method for producing an antireflection film according to the present invention is a method for producing an antireflection film that reduces the reflection by forming irregularities on the surface of the polymer film and continuously changing the refractive index. the formation of irregularities, (a) the uneven a anodized porous alumina with a formable pore on the surface by the structure transferred, by repeating the anodic oxidation and pore diameter enlargement treatment alternately, the pore diameter of the pores There the anodized porous alumina was changed to the tapered shape of the hole as a template, or a stamper prepared as a template (b) anodic-oxide porous alumina as a template, consisting of a method which comprises using.
この反射防止膜の製造方法においては、上記細孔の細孔周期が５０ｎｍ〜３００ｎｍであり、細孔深さが１００ｎｍ以上である陽極酸化ポーラスアルミナを、上記凹凸の形成用の鋳型あるいは上記スタンパ作製用の鋳型として用いることで、より最適な無反射膜の作製を実現できる。 In the method of manufacturing the anti-reflection film, a pore period of the pores 50 nm to 300 nm, an anodized porous alumina pore depth is 100nm or more, mold or the stamper for forming the above SL irregularities By using it as a casting mold, a more optimal non-reflective film can be produced.
また、定電圧で長時間陽極酸化を施したのち、一旦酸化皮膜を除去し、再び同一条件で陽極酸化を施すことで作製した陽極酸化ポーラスアルミナを用いることで、高い孔配列規則性を有する陽極酸化ポーラスアルミナを鋳型とすることが可能となる。 In addition, an anode having high pore arrangement regularity is obtained by using anodized porous alumina prepared by anodizing at a constant voltage for a long time, once removing the oxide film, and again anodizing under the same conditions. It becomes possible to use oxidized porous alumina as a mold.
使用する陽極酸化ポーラスアルミナとしては、たとえば、上記交互に繰り返す陽極酸化と孔径拡大処理のうちの陽極酸化において、シュウ酸を電解液として用い、化成電圧３０Ｖ〜６０Ｖにおいて作製した陽極酸化ポーラスアルミナを用いることもでき、硫酸を電解液として用い、化成電圧２５Ｖ〜３０Ｖにおいて作製した陽極酸化ポーラスアルミナを用いることもできる。このような陽極酸化ポーラスアルミナを用いることで、より高い規則性を有する窪み配列を鋳型とすることが可能となる。 As the anodized porous alumina to be used, for example, anodized porous alumina prepared using an oxalic acid as an electrolytic solution and an anodizing voltage of 30 to 60 V in the anodizing among the above-described alternately repeated anodizing and pore diameter expanding treatments is used. It is also possible to use anodized porous alumina prepared using sulfuric acid as the electrolytic solution at a conversion voltage of 25V to 30V. By using such anodized porous alumina, it becomes possible to use a hollow array having higher regularity as a template.
さらに、陽極酸化ポーラスアルミナの作製において、陽極酸化に先立ちアルミニウム表面に微細な窪みを形成し、これを陽極酸化時の細孔発生点とすることもできる。これにより、任意の配列を有する窪み配列を有する鋳型とすることが可能となる。 Further, in the production of anodized porous alumina, a fine depression can be formed on the aluminum surface prior to anodization, and this can be used as a pore generation point during anodization. Thereby, it becomes possible to set it as the casting_mold | template which has a hollow arrangement | sequence which has arbitrary arrangement | sequences.
本発明における反射防止膜は、このような方法により製造されたものであり、所望形状に形成された表面凹凸により、優れた反射防止性能を有するものである。この反射防止膜は、とくに光透過性高分子膜の表面に形成することにより、各種用途において目標とする反射防止性能を発揮することができる。 Antireflection coating definitive to the present invention has been produced by such a method, the surface irregularities formed into a desired shape, and has an excellent antireflection performance. By forming this antireflection film on the surface of the light-transmitting polymer film, the antireflection performance targeted in various applications can be exhibited.
本発明における反射防止膜作製用スタンパの製造方法は、例えば、高分子膜の表面に凹凸を形成し、屈折率を連続的に変化させることで反射を低減させる反射防止膜の作製に用いるスタンパの製造方法であって、表面に細孔を有し、該細孔に、陽極酸化と孔径拡大処理を交互に繰り返すことで、連続的に細孔径が変化するテーパー形状を付与した陽極酸化ポーラスアルミナを鋳型として用いる方法からなる。 Method for producing an antireflection film fabrication stamper definitive to the present invention, for example, a stamper used for manufacturing the anti-reflection film for reducing the reflection by forming irregularities on the surface of the polymer film, changing the refractive index continuously An anodized porous alumina having pores on the surface and having a tapered shape in which the pore diameter continuously changes by alternately repeating anodization and pore diameter enlargement treatment on the pores It comprises a method for Ru used as a template.
本発明における反射防止膜作製用スタンパは、このような方法により製造されたものからなる。 Antireflection film fabrication stamper definitive to the present invention consists of those produced by such a method.
本発明によれば、従来の方法に比較し、より簡便に、またテーパー形状が制御された陽極酸化ポーラスアルミナに基づく鋳型の形成が可能となり、この結果、可視光域における反射を低減した反射防止層およびその製造方法、更には、反射防止層を形成するためのスタンパ、およびその製造が可能となる。 According to the present invention, it is possible to form a mold based on anodized porous alumina whose taper shape is controlled more easily than conventional methods, and as a result, antireflection with reduced reflection in the visible light region. The layer and the manufacturing method thereof, as well as the stamper for forming the antireflection layer, and the manufacturing thereof can be realized.
以下に、本発明の望ましい実施の形態について、図面を参照して説明する。
図１は，本発明において形成される高分子からなる反射防止膜（無反射膜）の構造例を示している。高分子膜１の表面にテーパー状の突起配列、つまり凹凸を有することで，屈折率が連続的に変化し、反射率の低減が可能となる。
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows an example of the structure of an antireflection film (non-reflection film) made of a polymer formed in the present invention. Since the surface of the
図２は，本発明において，テーパー形状を有する陽極酸化ポーラスアルミナの作製方法法を示したものである。陽極酸化ポーラスアルミナ３は、アルミニウム基材２の表面に形成されるが、陽極酸化ポーラスアルミナ３の細孔４の形状は、円筒形状をしており、そのままでは、無反射膜を形成するための鋳型としての利用は困難である。本発明においては、陽極酸化と、エッチングによる孔の拡大処理を組み合わせることにより、所望のテーパー形状の孔を有する陽極酸化ポーラスアルミナの作製を実現する。所定の時間陽極酸化を施して所望の深さの細孔を形成したのち、適当な酸溶液中に浸漬することにより孔径の拡大処理を施す。この後、再び陽極酸化を施すことにより、１段階目に比較して孔径の小さな孔を形成する。この操作を繰り返すことにより、テーパー形状を有する陽極酸化ポーラスアルミナを得ることができる。このとき，繰り返し段数を増大することにより、より滑らかなテーパー形状を得ることが可能となる。陽極酸化時間と孔径拡大処理時間とを調整することで、様々なテーパー形状を有する孔の形成が可能であり、周期、孔深さに合わせて、最適な屈折率変化を設計することが可能となる。
FIG. 2 shows a method for producing anodized porous alumina having a tapered shape in the present invention. The anodized
このようにして形成されたテーパー形状を有する陽極酸化ポーラスアルミナを鋳型とし、図３に示すように、高分子フィルム（高分子膜）１に構造を転写し（たとえば、ポリマーを鋳型に充填することにより転写し）、鋳型を除去することで表面に突起を有する無反射構造を得ることができる。高分子フィルム１としては，良好な光透過性と加工性を有するものが利用できるが、代表的なものとして、アクリル樹脂、ポリカーボネート樹脂、ポリスチレン樹脂等が挙げられる。また、高分子への転写には、モノマーを充填した後重合させる方法、適当な溶媒に溶解した高分子をキャストする方法のほか、加温あるいは溶媒を加えることで可塑化した状態の高分子フィルムへ鋳型を押し付けることにより達成することができる。
As shown in FIG. 3, the structure is transferred to the polymer film (polymer film) 1 as shown in FIG. 3 (for example, the polymer is filled into the mold). The non-reflective structure having protrusions on the surface can be obtained by removing the template. As the
テーパー形状の孔を有する陽極酸化ポーラスアルミナを鋳型として用いる場合、陽極酸化ポーラスアルミナを直接用いる方法に加え、図４に示すように、陽極酸化ポーラスアルミナを鋳型とし、金属等の材料により同一の形状を有する新たな鋳型、つまり反射防止膜作製用スタンパを得ることも可能であり、耐久性、耐摩耗性、あるいは剥離特性の向上に有効である。図４に示す例では、先ず陽極酸化ポーラスアルミナ３を鋳型としてネガ型材としてのポリマー１に構造を転写した後陽極酸化ポーラスアルミナ３を除去し、作製されたネガ型にポジ型材としての金属等を充填し、ネガ型を除去して金属等からなるスタンパを得る。
When anodized porous alumina having a tapered hole is used as a template, in addition to the method of directly using anodized porous alumina, as shown in FIG. It is also possible to obtain a new mold having an anti-reflection film, that is, a stamper for producing an antireflection film, which is effective for improving durability, wear resistance, or peeling characteristics. In the example shown in FIG. 4, first, the structure is transferred to the
本発明においては、更に、図５に示すように、テーパー状の孔を形成するのに先立ち、あらかじめ比較的長時間陽極酸化を施し、陽極酸化ポーラスアルミナ層の孔配列を規則化させ、その後、アルミナ層を除去することで、アルミニウム表面にポーラスアルミナの底部（バリア層と呼ばれる）に対応する規則的な窪み配列を得、再び同一の電圧での陽極酸化、および孔径拡大処理を組み合わせることで、最表面から細孔が規則配列したテーパー状ポーラスアルミナを形成する。つまり、好ましい形状のテーパー状細孔がより高い規則性をもって配列された再陽極酸化層６を形成する。一般に、陽極酸化ポーラスアルミナにおいて、陽極酸化初期に形成される最表面部分の細孔配列の規則性は低く、このような陽極酸化ポーラスアルミナをもとに形成された無反射膜では、光散乱が増大し良好な無反射膜としては利用が困難になる可能性があるが、上記手法に基づけば、細孔が高い規則性をもって配列した陽極酸化ポーラスアルミナを得ることが可能となり、良好な無反射膜の形成に寄与する。このとき、シュウ酸を電解液として用いる場合には、３０〜６０Ｖの化成電圧で、より好ましくは、４０Ｖで、また、硫酸を電解液として用いる場合には、２５〜３０Ｖの化成電圧で高い規則性を有する陽極酸化ポーラスアルミナが得られることが知られている（たとえば、益田，応用物理，vol.69, No.5, p.558 (2000)）。このようにして形成された高い規則性の孔配列を有する陽極酸化ポーラスアルミナは、直接、あるいは更に金属等の鋳型作製に有効に用いることが可能である。
In the present invention, as shown in FIG. 5, prior to forming the tapered holes, anodization is performed for a relatively long time in advance to regularize the hole arrangement of the anodized porous alumina layer. By removing the alumina layer, a regular array of depressions corresponding to the bottom of the porous alumina (called the barrier layer) is obtained on the aluminum surface, and again by combining anodization at the same voltage and pore size expansion treatment, Tapered porous alumina in which pores are regularly arranged from the outermost surface is formed. That is, the
本発明においては、更に、図６に示すように、所望の配列の突起を有するモールド７を用いることでアルミニウム２の表面に窪み配列を形成し、その後、窪み間隔に適合した化成電圧での陽極酸化と孔径拡大処理を組み合わせることで、窪みが孔発生の開始点となり、モールドの突起配列に対応した孔配列を有するテーパー状の孔を有する陽極酸化ポーラスアルミナを得ることが可能となる。この方法によれば、任意の周期、配列を有する陽極酸化ポーラスアルミナの形成が可能となり良好な無反射膜を得るのに寄与する。この方法では、高い規則性の細孔配列を有するポーラスアルミナを得るのみならず、表示材料として用いる際に問題となる光干渉にもとづく干渉色の発生等の抑制にも寄与する。このようにして形成された高い規則性の孔配列を有する陽極酸化ポーラスアルミナは、直接、あるいは更に金属等の鋳型作製に有効に用いることが可能である。
Further, in the present invention, as shown in FIG. 6, a
次に、実施例に基づいて、本発明を更に具体的に説明する。
実施例１
純度９９．９９％のアルミニウム板を０．３Ｍシュウ酸を電解液とし、化成電圧４０Ｖとし、５０秒間陽極酸化を行った。その後、２重量％リン酸３０℃中に５分間浸漬し、孔径拡大処理を施した。この操作を５回繰り返すことで、周期１００ｎｍ、細孔径開口部８０ｎｍ、底部２５ｎｍ、孔深さ３００ｎｍのテーパー状細孔を有する陽極酸化ポーラスアルミナを得た。
Next, based on an Example, this invention is demonstrated further more concretely.
Example 1
An aluminum plate having a purity of 99.99% was subjected to anodization for 50 seconds with 0.3M oxalic acid as an electrolytic solution and a formation voltage of 40V. Then, it was immersed in 2% by weight phosphoric acid at 30 ° C. for 5 minutes and subjected to a pore size expansion treatment. By repeating this operation five times, an anodized porous alumina having tapered pores having a period of 100 nm, a pore diameter opening portion of 80 nm, a bottom portion of 25 nm, and a pore depth of 300 nm was obtained.
重合開始剤として５重量％の過酸化ベンゾイルを含むメタクリル酸メチルモノマーを細孔内に充填した後、紫外線を照射することで重合させた。重合後、高分子層を鋳型から剥離することで、表面に突起配列を有するポリメチルメタクリレート樹脂を得た。得られた高分子膜の反射率を測定した結果、反射率の低減が確認された。 A methyl methacrylate monomer containing 5% by weight of benzoyl peroxide as a polymerization initiator was filled in the pores, and then polymerized by irradiation with ultraviolet rays. After the polymerization, the polymer layer was peeled from the mold to obtain a polymethyl methacrylate resin having a protrusion arrangement on the surface. As a result of measuring the reflectance of the obtained polymer film, it was confirmed that the reflectance was reduced.
実施例２
実施例１と同様のアルミニウム板に対して、０．３Ｍ硫酸を電解液とし、化成電圧２５Ｖとし、陽極酸化、孔径拡大処理を繰り返した。その後、同様にポリメタクリル酸メチル樹脂に構造を転写することにより、反射率の低減が確認された。
Example 2
With respect to the same aluminum plate as in Example 1, 0.3M sulfuric acid was used as the electrolytic solution, the formation voltage was 25V, and the anodic oxidation and the pore diameter expansion treatment were repeated. Thereafter, the structure was transferred to a polymethyl methacrylate resin in the same manner, thereby confirming a reduction in reflectance.
実施例３
実施例１と同様の条件で、２時間陽極酸化を施したのち、ポーラスアルミナ層をリン酸／クロム酸混合液により選択的に溶解除去した。この後、同一の条件で陽極酸化、孔径拡大処理を組み合わせることで、細孔が高度に配列したテーパー状孔を有する陽極酸化ポーラスアルミナを得た。その後、実施例１と同様の手法によりポリメタクリル酸メチル樹脂に構造を転写することにより、反射率の低減が確認された。
Example 3
After anodizing for 2 hours under the same conditions as in Example 1, the porous alumina layer was selectively dissolved and removed with a phosphoric acid / chromic acid mixture. Thereafter, anodized porous alumina having tapered pores with highly arranged pores was obtained by combining anodization and pore diameter expansion treatment under the same conditions. Thereafter, the structure was transferred to a polymethyl methacrylate resin in the same manner as in Example 1, and it was confirmed that the reflectance was reduced.
実施例４
実施例１と同様の方法でテーパー形状孔を有する陽極酸化ポーラスアルミナを形成後、これを鋳型として、ポリカーボネート樹脂に転写を行うことで、低反射率特性を示すことが確認された。
Example 4
After forming anodized porous alumina having tapered holes by the same method as in Example 1, it was confirmed that low-reflectivity characteristics were exhibited by performing transfer to a polycarbonate resin using this as a template.
実施例５
実施例１と同様の方法でテーパー状孔を有する陽極酸化ポーラスアルミナを形成後、陽極酸化ポーラスアルミナにポリメチルメタクリレートを充填し、ポーラスアルミナのネガ鋳型を得た。その後、ポリメチルメタクリレート表面に導電化処理を施し、めっき法によりニッケルを充填した。ポリメタクリレートネガ鋳型を溶解除去することで、母型である陽極酸化ポーラスアルミナと同一の構造を有するニッケルポジ鋳型を得た。これを加温したポリメチルメタクリレートに押し付けることにより表面に突起配列を有する低反射膜を得た。
Example 5
After anodized porous alumina having tapered holes was formed by the same method as in Example 1, the anodized porous alumina was filled with polymethyl methacrylate to obtain a negative mold of porous alumina. Thereafter, the polymethyl methacrylate surface was subjected to a conductive treatment, and nickel was filled by a plating method. By dissolving and removing the polymethacrylate negative mold, a nickel positive mold having the same structure as the base anodized porous alumina was obtained. This was pressed against heated polymethylmethacrylate to obtain a low reflection film having a protrusion arrangement on the surface.
実施例６
周期２００ｎｍの突起配列を有するモールドをアルミニウム板に押し付けることにより、アルミニウム表面に突起に対応した窪み配列を得た。その後、０．０５Ｍシュウ酸を用い、８０Ｖの化成電圧での陽極酸化と孔径拡大処理を５回繰り返すことで、周期２００ｎｍ、細孔径開口部１６０ｎｍ、底部５０ｎｍ、孔深さ５００ｎｍのテーパー状細孔を有する陽極酸化ポーラスアルミナを得た。その後、実施例１と同様の手法によりポリメタクリル酸メチル樹脂に構造を転写することにより、反射率の低減が確認された。
Example 6
By pressing a mold having a protrusion arrangement with a period of 200 nm against an aluminum plate, a depression array corresponding to the protrusion was obtained on the aluminum surface. Subsequently, 0.05M oxalic acid was used, and anodization at a conversion voltage of 80 V and pore diameter enlargement treatment were repeated five times, so that tapered pores having a period of 200 nm, a pore diameter opening portion of 160 nm, a bottom portion of 50 nm, and a pore depth of 500 nm were obtained. An anodized porous alumina having Thereafter, the structure was transferred to a polymethyl methacrylate resin in the same manner as in Example 1, and it was confirmed that the reflectance was reduced.
本発明は、反射防止膜の形成が要求されるあらゆる用途に適用でき、とくに、視認性の向上が要求される各種情報機器用表示装置等に好適なものである。 The present invention can be applied to any application that requires the formation of an antireflection film, and is particularly suitable for display devices for various information devices that require improved visibility.
１ 高分子フィルム（高分子膜、ポリマー）
２ アルミニウム
３ 陽極酸化ポーラスアルミナ
４ 細孔
５ 金属（スタンパ）
６ 再陽極酸化層
７ モールド
1 Polymer film (polymer film, polymer)
2
6
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