JP4405867B2 - Electron beam exposure apparatus and device manufacturing method - Google Patents

Description

  The present invention relates to an electron beam exposure apparatus (drawing apparatus), and more particularly to a multi-beam exposure apparatus (drawing apparatus) capable of realizing high throughput and high accuracy in a lithography process of a semiconductor device such as a DRAM having a storage capacity of 4 Gbits or more. Suitable for use.

  2. Description of the Related Art In recent years, an electron beam lithography apparatus has been applied to an exposure apparatus used in a lithography process in a semiconductor manufacturing process that has been miniaturized due to its high resolution. Under such circumstances, as a device applicable to design rules after 4 Gbit DRAM, the electron beam emitted from the electron gun is converged, and the convergence position is controlled by a deflector, an electromagnetic lens, etc., and a desired pattern is formed on the semiconductor substrate. A so-called direct drawing type electron beam exposure apparatus has been devised.

  The biggest problem with these devices is to improve the drawing speed. As a means of solving the problem, the electron beam emitted from the electron gun is divided into a plurality of lines and arranged in a matrix, and a pattern is drawn simultaneously with each beam. There is a so-called multi-beam type electron beam drawing apparatus. Since this type of apparatus simultaneously draws a pattern in a wider field of view with a plurality of electron beams, it is considered that the throughput can be dramatically improved.

  FIG. 7 is a view showing an example of such a multi-beam type electron beam drawing apparatus. In the figure, reference numeral 70 denotes an electron gun, which is a light source of a drawing apparatus. The electron beam 71 emitted from this light source is converted into a substantially parallel electron beam by the condenser lens 72. The substantially parallel electron beam is incident on a multi-beam module 73 in which a plurality of element electron optical systems 74 are arranged. The element electron optical system 74 having a blanking electrode forms intermediate images 75 and 76 of a plurality of light sources in the vicinity of the opening of the blanking aperture 77 and simultaneously operates the plurality of blanking electrodes individually to blanking aperture 77. Can shield a plurality of electron beams.

  Next, the magnetic lens 79 and the magnetic lens 80 constitute a projection system with a magnetic symmetric doublet. Here, the distance between the magnetic lens 79 and the magnetic lens 80 is equal to the sum of the focal lengths of the respective lenses, and the intermediate images 75 and 76 of the light source are in the vicinity of the focal position of the magnetic lens 79. It is formed near the focal position of the lens 80. Reference numeral 83 denotes a magnetic deflector, and 84 denotes an electrostatic deflector that performs deflection by an electric field.

  The electron beam drawing apparatus deflects the electron beam from the plurality of intermediate images 75 and 76 using these two deflectors 83 and 84, and moves the images of the plurality of intermediate images on the sample 82 in a plane. It is supposed to let you. Here, the magnetic deflector 83 and the electrostatic deflector 84 are selectively used depending on the moving distance of the light source image. Reference numeral 85 denotes a dynamic focus coil for correcting a shift of the focus position due to deflection aberration generated when the deflector is operated, and reference numeral 78 denotes a dynamic stig coil for correcting astigmatism generated in the same process.

  Reference numeral 86 denotes an XYZ stage for moving the sample 82 in the X, Y, and Z directions. At the time of drawing, a plurality of intermediate images are projected onto the sample 82 by the projection system based on the pattern data, and the blanking electrodes of the plurality of element electron optical systems 74 are operated to turn on the plurality of electron beams. While turning off, the entire surface of the sample 82 is scanned using the magnetic field deflector 83, the electrostatic deflector 84, and the XYZ stage 86 to obtain a desired exposure pattern.

Next, FIG. 8 shows a blanking electrode of the element electron optical system 74 mounted on the multi-beam module 73 in the electron beam drawing apparatus, a driver for driving them, and a transmission path for transmitting a drive signal. In the figure, a drawing signal is converted into an on / off signal pattern for each beam, and a drive signal is output to a driver 88 from a data processing system 87 that gives a desired exposure time. This output is connected to the interface connector 90 of the relay substrate 91 via the drive signal cable 89, passes through the electro-optical column 98 by a wiring pattern, and is input to the terminator 92 which is a drive signal termination circuit. The drive signal that has passed through the terminator 92 passes through the vacuum seal 99 and is connected to the blanking module 94 via the contact unit 93.

Further, on the blanking module 94, a pair of blanking electrodes 96 are provided in each blanking opening 97, and a drive signal is connected to the blanking electrodes 96 from the contact unit 93 through the wiring pattern 95. In addition, a cooling liquid is flowed in this order from the cooling device 102 to the introduction pipe 100, the relay board 91, and the discharge pipe 101 to remove heat generated in the terminator 92, and thermal deformation of the members inside the electron optical column and the vacuum seal And the device which suppresses the characteristic change is made.
JP-A-11-176719

  By the way, even in the above-described apparatus proposed for the purpose of improving the drawing speed, the throughput of the entire apparatus cannot be improved unless the control circuit is speeded up to some extent. For example, in the above-described conventional device, the blanking electrode drive period is 100 MHz or more, and the frequency component of the drive signal reaches about 1 GHz. At the same time, the number of electron beam multiplexes has increased to at least 500, many thousands, against the background of further improvement in throughput. In order to transmit such a large amount of signals correctly without variation or distortion, the characteristics of a plurality of transmission lines must be aligned and maintained. For this reason, it is difficult to configure the transmission line of the drive signal with an open line, and the design becomes easier if the termination line is adopted.

  Therefore, in the above-described conventional example, the terminator is disposed in the vicinity of the blanking electrode to maintain the driving characteristics. As described above, the terminator generates heat, but the power consumed by the terminator reaches 2 kW even when the exposure duty is 50% when the number of beams is 4,000. It is very difficult to remove this enormous amount of heat to a level that does not affect the electron optical column and peripheral members, and at the same time, the difficulty of cooling control also causes thermal instability around the member to be cooled. Yeah. As described above, the high-speed drive signal and the high density of control lines due to the increase in the number of beams are a major limitation on the design of the transmission line that transmits the signals, and at the same time, the factors that deteriorate the stability of the drawing performance. It has become.

  In order to cope with such a problem, for example, in Japanese Patent Application Laid-Open No. 11-176719 (Patent Document 1), a transmission line is branched near a blanking electrode, one having a blanking electrode and the other having the same characteristic impedance as the transmission line. It has been proposed to connect an auxiliary line, lead the auxiliary line out of the lens barrel, mount a terminal resistor at the end, and perform cooling. Patent Document 1 discloses a method in which two wires are directly formed from a blanking electrode without branching on a transmission line, and one is connected to a driver of a drive signal and the other is connected to a terminator.

However, the mounting space of the transmission line has reached its limit as the number of beams increases, and a method of branching in the middle of the transmission line must be selected in order to cope with higher throughput. Furthermore, as described above, the frequency component of the drive signal for the blanking electrode reaches the vicinity of 1 GHz as the speed of the apparatus increases. In such a signal band, variation in impedance when the blanking electrode is seen from the branching portion cannot be ignored, making adjustment for correcting transmission line design and variation in transmission characteristics difficult.

  The present invention has been made in view of the above problems, and its purpose is to facilitate the design of a transmission line and to maintain and manage the transmission characteristics of a drive signal in a simple manner. It is to provide a possible electron beam drawing apparatus.

  In order to achieve the above object, the present invention comprises a dividing means for processing and dividing an electron beam emitted from an electron gun into a plurality of exposure beams, a blanking electrode and an aperture, and obtained by the dividing means. A blanking aperture array for controlling on / off of each exposure beam, a transmission line for transmitting a driving signal for driving the blanking electrode, and an electron for converging the exposure beam on a sample to expose a desired pattern In an electron beam exposure apparatus comprising an optical system and a lens barrel that supports the electron optical system, a drive signal that is connected to one end of the transmission line outside the lens barrel and drives the blanking electrode A driver for outputting; a terminator connected to the other end of the transmission line outside the lens barrel; and terminating the drive signal; the driver and the terminator; A stub line disposed on the transmission line in between and having an end connected to the blanking electrode, and substantially having a length of the plurality of stub lines connected to the plurality of blanking electrodes It is characterized by being equal.

  The present invention also provides an electron gun for emitting electrons, a molding system for processing an electron beam emitted from the electron gun into an exposure beam having desired characteristics, and an exposure beam formed by the molding system. A blanking aperture array having a blanking electrode and an aperture for independently controlling on / off of each beam, a transmission line for transmitting a drive signal for driving the blanking electrode of the blanking aperture array, and An electron optical system comprising: a deflection system for controlling the position of the exposure beam that has passed through the blanking aperture array; and a projection system for drawing the desired pattern by converging the exposure beam on the sample. In an electron beam drawing apparatus having a lens barrel for arranging each element of the optical system, a drive signal for driving the blanking electrode is output. A driver that is connected to one end of the transmission line outside the barrel, and a terminator for terminating the drive signal is connected to the other end of the transmission line outside the barrel, A stub line is provided on the transmission line between the output of the driver connected to the transmission line and the terminator, the blanking electrode is connected to an end of the stub line, and the plurality of blanking electrodes The length of the plurality of stub lines to be connected may be constant or substantially constant.

  As described above, in the present invention, the transmission line terminator, which is a heat source, is disposed outside the lens barrel, and the equal-length stub line from the transmission line is suppressed while suppressing the characteristic change of the lens barrel and other members due to the heat generation. By branching and placing the blanking electrode at its end, it is easy to control the characteristics in setting the transmission line, and as a result, the blanking electrode is driven while maintaining the characteristics of the drive signal well. It is possible to perform drawing with high accuracy.

  The present invention further includes a first substrate on which the blanking electrode is formed, and a second substrate for relaying a drive signal to the blanking electrode, and the transmission line includes the second substrate. Introduced into the first substrate through a bonding member, wired on the first substrate, led out from the first substrate, and introduced into the second substrate through the bonding member. The stub line is formed to be branched from the transmission line on the first substrate and connected to the blanking electrode. As a feature, the stub line having a substantially constant length may be minimized to facilitate impedance management while maintaining the characteristic impedance of the transmission line.

  The present invention further includes a first substrate on which the blanking electrode is formed, and a second substrate for relaying a drive signal to the blanking electrode, and the transmission line includes the second substrate. The stub line is branched from the transmission line on the second substrate and joined to the second substrate and is formed so as to be led out from the second substrate. Introduced into the first substrate through a member, formed on the first substrate to be connected to the blanking electrode, while maintaining the characteristic impedance of the transmission line, The wiring density of the wiring pattern on the second substrate may be lowered to improve the mountability.

  In the electron beam exposure apparatus having any one of the above features, the transmission includes a drive profile monitor that observes drive characteristics of a drive signal that drives the blanking electrode, and the transmission connected to the terminator It is characterized by observing the drive characteristics at the end position of the line, and by observing the display, the drive signal can be monitored at the time of setting the device or during normal operation so that it can be used for adjustment and inspection. May be.

  Furthermore, the present invention provides an electron beam exposure apparatus having any one of the above features, a drive profile control unit for controlling drive characteristics of a drive signal for driving the blanking electrode, and the transmission connected to the terminator. A drive profile measurement unit that measures the drive characteristic at the end position of the line; and a calculation unit that calculates a correction parameter for correcting the drive characteristic, wherein the calculation unit is a measurement result of the drive profile measurement unit The drive parameter control unit calculates the correction parameter based on the correction parameter, and the drive profile control unit controls the drive characteristic based on the correction parameter. Signal characteristics such as transmission delay, overshoot, and ringing of the drive signal May be optimally corrected.

  The present invention also provides an electron beam exposure apparatus that irradiates a sample with a plurality of electron beam beams to expose a desired pattern, and has a plurality of blanking electrodes and a plurality of apertures, A blanking aperture array for controlling irradiation, one end connected to a driver for outputting a drive signal for driving the blanking electrode, and the other end connected to a terminator for terminating the drive signal, A transmission line for transmitting a driving signal to be driven; and a plurality of stub lines connected to the plurality of blanking electrodes from the transmission line between the driver and the terminator, and a plurality of the stub lines The length from the transmission line to the blanking electrode may be substantially equal.

  A device manufacturing method according to the present invention includes a step of exposing a sample using an electron beam exposure apparatus having any one of the above features, and a step of developing the exposed sample.

  As described above, the electron beam exposure apparatus of the present invention is a transmission line setting for transmitting a blanker drive signal while mounting a terminator outside the apparatus and virtually eliminating the influence of the heat generation on the lens barrel and peripheral members. It is possible to easily maintain and manage the transmission characteristics of the drive signal by a simple method.

  Furthermore, by measuring the signal characteristics at the end of the drive signal and correcting the output of the drive signal based on the result, it is possible to perform correction reflecting the actual state of distortion and delay, and thus good transmission characteristics. Can be obtained, and it is possible to maintain good drawing accuracy even in high-speed drawing corresponding to high throughput.

Next, embodiments of the present invention will be described in detail with reference to the drawings by giving specific examples.

FIG. 1 is a block diagram of an electron beam exposure apparatus (drawing apparatus) according to Embodiment 1 of the present invention. In the figure, reference numeral 1 denotes an electron gun, which is an electron gun as a light source of a drawing apparatus. The electron beam 2 emitted from the electron gun 1 is converted into a substantially parallel electron beam by the condenser lens 3 whose front focal position is the light source position. This substantially parallel electron beam is incident on a molding system 5 in which a plurality of element electron optical systems 4 are arranged. The substantially parallel electron beam is processed and formed into a plurality of parts in a plane perpendicular to the optical axis by the forming system 5, and the electron beam which is the divided exposure beam is blanking for individually controlling on / off of each electron beam. Passing through the module 6, intermediate images 7a and 7b of a plurality of light sources are formed in the vicinity of the opening of the blanking aperture 10 which is a blanking aperture array . Here, the blanking module 6 has a plurality of openings and a pair of blanking electrodes provided for each opening, and each of these blanking electrodes is individually operated to generate a plurality of electron beams with the blanking aperture 10. Each can be shielded individually.

  Next, the magnetic lens 12 and the magnetic lens 16 constitute a reduction projection system with a magnetic symmetric doublet, and have a limiting aperture 17. Here, the distance between the magnetic lens 12 and the magnetic lens 16 is equal to the sum of the focal lengths of the respective lenses, and the intermediate images 7a and 7b of the light source are in the vicinity of the focal position of the magnetic lens 12, and these images are magnetic fields. It is formed at the focal position of the lens 16. At this time, the ratio of the focal lengths of the magnetic lens 12 and the magnetic lens 16 is the projection magnification. Further, since the magnetic fields of the magnetic lens 12 and the magnetic lens 16 are set so as to act in opposite directions, so-called five aberrations of spherical aberration, astigmatism, coma aberration, field curvature, and longitudinal chromatic aberration are provided. Other sidel aberrations and rotational and magnification chromatic aberrations have been canceled. Here, the correction lens group 11 is a functional lens group that is disposed between the magnetic lens 12 and the intermediate images 7a and 7b of the light source and finely adjusts the projection magnification, the beam convergence position, various aberration corrections, and the like. Reference numeral 13 denotes a magnetic field deflector, and reference numeral 14 denotes an electrostatic deflector that performs deflection by an electric field.

The electron beam exposure apparatus (drawing apparatus) deflects a plurality of electron beams at once using the two deflectors 13 and 14 to form images of the plurality of intermediate images 7a and 7b on the sample 18. It is designed to move on a plane. The magnetic deflector 13 and the electrostatic deflector 14 are selectively used depending on the moving distance of the light source image. Reference numeral 15 denotes a dynamic focus coil for correcting a shift of the focus position due to a deflection aberration generated when the deflector is operated. Reference numeral 19 denotes an XYZ stage for moving the sample 18 in the X, Y, and Z directions, and its position and moving speed are accurately controlled by a plurality of laser interferometers.

  In actual drawing, on the basis of the pattern data, a drive signal is supplied from the beam control unit 21 in the control system 20 to the blanking module 6 through the transmission path 8, and each blanking electrode is operated to generate a plurality of electrons. While turning the beam on and off, the images of the intermediate images 7a and 7b are projected onto the sample 18 by the reduction projection system composed of the magnetic lens 12 and the magnetic lens 16, and the magnetic deflector 13 and the electrostatic deflector 14 are used. 18 is scanned and the XYZ stage 19 is cooperated to obtain a desired exposure pattern. The drive signal supplied to the blanking module 6 is output from the blanking module 6 through the transmission line 9 and terminated by a terminator 23 in the signal termination unit 22. The cooling device 25 causes the refrigerant to flow through the cooling pipe 26 and removes heat generated at the end of the signal via the heat exchanger 24.

  2 shows a plurality of blanking electrodes placed on the blanking module 6 in the electron beam exposure apparatus (drawing apparatus) of FIG. 1, a beam control unit 21 for driving them, and transmission paths 8 and 9 for transmitting drive signals. FIG. 3 is a diagram illustrating details of a signal termination unit 22.

In the figure, reference numeral 43 denotes a data processing unit that converts drawing data into an on / off signal pattern for each beam and provides a desired exposure time and exposure timing. 44 denotes a blanking module 6 according to data from the data processing unit 43. It is a driver that sends a drive signal to the blanking electrode 33. Reference numeral 8a denotes a drive signal cable for connecting the drive signal to the input connector 35 of the relay board 31 serving as the second board . Reference numeral 34 denotes a wiring pattern for connecting a drive signal transmitted through the drive signal cable 8a to each blanking electrode 33 arranged on a blanker substrate 30 as a first substrate having a plurality of beam openings 32. , 36 and 37 are contact units which are connecting members for connecting the relay substrate 31 as the second substrate and the blanker substrate 30, and 38 is a vacuum seal for maintaining the vacuum inside the lens barrel. 9a is a signal output cable, 27 is a terminator for terminating the drive signal input to the terminator 23, and 39 is a probe for measuring the characteristics of each drive signal at the termination position of the terminator 27. 40 is a waveform processing unit for performing measurement processing of the drive signals is a driving profile measurement unit, 42 is calculated and the correction of the correction parameter based on a measurement result of the measuring unit takes in the signal 41 from the waveform processing section 40 A drive profile calculation unit that performs calculations and the like, and 24 is a heat exchanger for removing heat generated by the terminator 27. Reference numeral 26 denotes a cooling pipe for flowing the refrigerant through the heat exchanger 24, and reference numeral 25 denotes a cooling device.

  Here, the drive signal output from the driver 44 has a drive period of 100 MHz or more, and is subjected to pulse width modulation corresponding to a resolution of about 8 bits in exposure gradation. In this embodiment, the substantial signal band of the drive signal at the time of the drawing operation is about 1 GHz. Therefore, the drive signal cable 8a and the wiring pattern 34 constituting the drive signal transmission path are all distributed constant lines. The design is controlled with characteristic impedance. As can be seen from the figure, the wiring pattern from the output end of the driver 44 to the terminator 27 is configured to be regarded as a so-called bus. A stub line is branched from one point on the bus line, and its end is connected to each blanking electrode 33. These stub lines have the same line length, and therefore the impedances of the blanking electrodes 33 viewed from the output end of the driver 44 are also substantially equal. In this embodiment, since the stub branching is performed by the wiring pattern on the blanker substrate 30, the drive signal is transmitted in the order of the relay substrate 31, the contact units 36 and 37, the blanker substrate 30, the contact units 36 and 37, and the relay substrate 31. Designed to pass.

  FIG. 3 is a diagram showing the concept of the stub branch portion, and schematically shows the wiring pattern 34, the blanking electrode 33, the beam opening 32, and the stub lines 45a to 45f, which are buses for driving signals. The stub lines 45a to 45f are configured so that the lengths of the stub lines become equal by changing the connection position to each blanking electrode 33 little by little.

  Returning to FIG. 2, the relay substrate 31 also has a function as a support structure for the vacuum bulkhead and the lens barrel, and the end face of the electron optical lens barrel is pressed by the vacuum seal 38 to form a part of the lens barrel. ing. By doing so, the vacuum state inside the vacuum seal 38 is maintained, and the outside is at atmospheric pressure.

  The blanking electrode drive signal once enters the electron optical column through the above-described path, and then passes from the blanker substrate 30 through the contact unit 37, through the relay substrate 31 and the vacuum seal 38, and into the electron optical column. Derived outside. Further, the drive signal is a termination substrate located at a position sufficiently away from the electron optical column via the signal output cable 9a from the relay substrate 31 in order to separate the terminator 27 as a heat source from the electron optical column and the drawing apparatus main body. 23 and terminated with a terminator 27.

FIG. 4 is a diagram for explaining the waveform processing unit 40 and the profile calculation unit 42 in FIG. 2 and their surroundings in more detail. In the figure, the data processing unit 43, the driver 44, the drive signal cable 8a, the relay board 31, the signal output cable 9a, the probe 39, and the like are the same as those in FIG. Reference numeral 48 denotes a buffer, and reference numeral 50 denotes a converter that measures the waveform of the drive signal at the position of the terminator 27 via the probe 39 and the buffer 48. Reference numeral 51 denotes a waveform monitor connected to the output of the buffer 48 for observing the waveform of the drive signal. Reference numeral 54 denotes a window delay measurement for measuring the delay time by comparing the synchronous window signal 55 with the round trip delay signal 53. Part. Reference numeral 49 denotes a dose timing measurement unit that compares the forward delay signal 52 with the buffer output of the drive signal at the position of the terminator 27 and measures the time difference between these signals.

  The data processing unit 43 performs drawing by sequentially outputting a synchronization window signal (Wd) 55 and a dose signal (Sd) 56 that is a driving signal for the blanking electrode based on pattern data to be drawn. Here, the synchronization window signal (Wd) 55 is a so-called drawing window that can be drawn corresponding to each shot at the time of drawing, and the temporal relative relationship between the drawing window and the dose signal (Sd) 56 is adjusted to a desired value. There is a need to. At this time, a time is required for the dose signal (Sd) 56 to reach the blanking electrode, and the output timing of the dose signal (Sd) 56 with respect to the synchronization window signal (Wd) 55 is determined in consideration of the delay time in advance. It needs to be adjusted.

  The output timing adjustment process will be described with reference to FIG. In FIG. 5, Wd is the above-mentioned synchronization window signal (55), and the actual dose signal must be located at a desired timing within a period (Twind) in which the signal level is low. Sd is a dose signal (56) which is a driver input of the drive signal for the blanking electrode, and a pulse width corresponding to the dose amount is given by the data processing unit 43 based on the pattern data of the pattern to be drawn. Wt is a forward delay signal (52) of the synchronization window signal Wd, Wm is a round trip delay signal (53) of the synchronization window signal Wd, and St is a dose delay signal (39) at the position of the terminator 27 of the dose signal Sd. .

  Now, the measurement data obtained when operating with the appropriate initial value Tpre (0) set as the pre-delay time Tpre and the required dose timing Treq, that is, the fall of the dose signal at the blanking electrode position. From the required delay time seen from the fall of the synchronization window signal Wd, the predelay time Tpre to be set is obtained as follows.

Thd = Tmwd / 2
Td = Thd + Tm-Tpre (0)
Tpre = Treq−k · Td
Here, k is a delay coefficient depending on the position of the stub branch described above when the total length of the transmission path through which the dose signal propagates is 1. The window round-trip delay time Tmwd is acquired from the window delay measurement unit 54, and Tm is acquired from the dose timing measurement unit 49 as the time difference between the forward delay signal Wt and the dose delay signal St.

  Next, Embodiment 2 of the present invention will be described with reference to FIG. The present embodiment provides the second configuration with respect to the relay substrate 31 and the blanker substrate 30 in the first embodiment, and is the same as the first embodiment except for those portions.

In the figure, a drive signal cable 8 a is connected to an input connector 35 b placed on one end of the relay substrate 31, and a drive signal is input to the wiring pattern 34. The wiring pattern 34, which is a drive signal transmission path, is connected to the output connector 35c at the other end of the relay board 31 as it is, and is connected to the signal output cable 9a from there. It has become. Further, branch lines 46a to 46d branch from one point on the wiring pattern 34 placed on the relay substrate 31, and these branch lines are connected to the blanker wiring 47 on the blanker substrate 30 via the contact unit 36b. A blanker wiring 47 is connected to the blanking electrode 33. In this embodiment, the branch lines 46a to 46d on the relay substrate 31 and the blanker wiring 47 on the blanker substrate 30 connected thereto are combined to constitute one stub line.

Therefore, the equal length wiring is made such that the length of the branch line on the relay board 31 and the length of the blanker wiring on the blanker board 30 are almost equal. The position and the routing of the branch line and the routing of the blanker wiring 47 on the blanker substrate 30 are considered. In the present embodiment, in consideration of the mounting space on the blanker substrate, the so-called bus is configured to pass only through the relay substrate 31, and is characterized by not passing through the blanker substrate 30.

  Here, various ideas can be made in the design of an actual stub line. For example, if the so-called λ / 4 stub that maximizes the voltage amplitude at the open end is used, the signal band of the drive signal propagating through the transmission line is 1 GHz, and the dielectric constant ε of the substrate on which the transmission line pattern is arranged is 4.6. The length of the stub line is about 35 mm from the wavelength λ in consideration of the wavelength shortening rate. Similarly, it is 70 mm at 500 MHz. Further, since the desired impedance can be obtained by changing the length of the stub line, the open end impedance can be set to λ / 8 stub, λ / 2 stub, etc. according to the specification. Furthermore, since the characteristics of the open stub line are repeated at a period of λ / 2, it is possible to design by adding an integral multiple of λ / 2 to the above λ / 4, λ / 2, or λ / 8.

  Next, a semiconductor device manufacturing process using the electron beam exposure apparatus according to the above embodiment will be described as a third embodiment of the present invention. FIG. 9 is a diagram showing a flow of an entire manufacturing process of a semiconductor device. In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (EB data conversion), exposure control data for the electron beam drawing apparatus is created based on the designed circuit pattern.

  On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer using lithography using the electron beam lithography apparatus and the wafer to which the exposure control data has been input. The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is an assembly process (dicing, bonding), packaging process (chip encapsulation), etc. Process. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. A semiconductor device is completed through these processes, and is shipped in Step 7.

  The wafer process in step 4 includes the following steps. An oxidation step for oxidizing the surface of the wafer, a CVD step for forming an insulating film on the wafer surface, an electrode formation step for forming electrodes on the wafer by vapor deposition, an ion implantation step for implanting ions on the wafer, and applying a photosensitive agent to the wafer A resist processing step, an exposure step for printing and exposing a circuit pattern on the wafer after the resist processing step by the electron beam lithography apparatus, a development step for developing the wafer exposed in the exposure step, and a portion other than the resist image developed in the development step. Etching step to scrape off, resist stripping step to remove unnecessary resist after etching. By repeating these steps, multiple circuit patterns are formed on the wafer.

It is a figure showing schematic structure of the electron beam exposure apparatus (drawing apparatus) which concerns on Example 1 of this invention. It is the figure which showed the blanking module of the electron beam exposure apparatus (drawing apparatus) which concerns on Example 1 of this invention, and its peripheral circuit. It is a figure showing the transmission line of the blanking opening and blanking electrode periphery of the electron beam exposure apparatus (drawing apparatus) which concerns on Example 1 of this invention. It is a figure showing the signal termination | terminus of a blanking electrode drive signal and the correction system of a signal characteristic of the electron beam exposure apparatus (drawing apparatus) which concerns on Example 1 of this invention. It is a figure showing the measurement signal in the correction system of the signal characteristic of the blanking electrode drive signal of the electron beam exposure apparatus (drawing apparatus) which concerns on Example 1 of this invention. It is a figure showing the detail of the blanking module of the electron beam exposure apparatus (drawing apparatus) which concerns on Example 2 of this invention. It is a figure showing the outline | summary of the conventional multibeam type | mold electron beam exposure apparatus (drawing apparatus). It is a figure showing the blanking module of the conventional multibeam type | mold electron beam exposure apparatus (drawing apparatus). It is a figure which shows the flow of the whole manufacturing process of a semiconductor device.

Explanation of symbols

1 electron gun, 2: electron beam, 3: condenser lens, 4: elemental optical system,
5: molding system, 6: blanking module, 7a, 7b: intermediate image, 8, 9: transmission path, 10: blanking aperture, 11: correction lens group, 12, 16: magnetic symmetric doublet lens (magnetic lens), 13: Magnetic deflector, 14: Electrostatic deflector, 15: Dynamic focus coil, 17: Restriction aperture, 18: Sample, 19: XYZ stage, 20: Control system, 21: Beam control unit, 22: Termination unit, 23 : Terminator, 24: Heat exchanger, 25: Cooling device, 26: Cooling pipe, 27: Terminator, 30: Blanker board, 31: Relay board, 32: Beam aperture, 33: Blanking electrode, 34: Wiring pattern, 35: input connector, 36, 37: contact unit, 38: vacuum seal, 39: probe, 40: waveform processing unit, 42: profile calculation unit, 43: data Data processing unit, 44: driver, 46 a to 46 d: branch line, 47: blanker wiring.

Claims (7)

A splitting means for processing and dividing an electron beam emitted from an electron gun into a plurality of exposure beams, a blanking electrode and an aperture, and a blanking aperture for controlling on / off of each exposure beam obtained by the splitting means An array; a transmission line for transmitting a drive signal for driving the blanking electrode; an electron optical system for converging the exposure beam on a sample to expose a desired pattern; and a lens barrel supporting the electron optical system In an electron beam exposure apparatus comprising:
A driver connected to one end of the transmission line on the outside of the barrel and outputting a drive signal for driving the blanking electrode; and a driver connected to the other end of the transmission line on the outside of the barrel A terminator for terminating a signal; and a stub line disposed on the transmission line between the driver and the terminator and having an end connected to the blanking electrode. An electron beam exposure apparatus, wherein the plurality of stub lines connected to the ranking electrode have substantially the same length.   A first substrate on which the blanking electrode is formed; and a second substrate for relaying a drive signal to the blanking electrode, wherein the transmission line is introduced into the second substrate, and a joining member Is introduced into the first substrate through, wired on the first substrate, led out from the first substrate, introduced into the second substrate through the bonding member, and the second substrate. 2. The stub line is formed so as to be led out from a substrate, and is formed so as to be branched from the transmission line on the first substrate and connected to the blanking electrode. The electron beam exposure apparatus described in 1.   A first substrate on which the blanking electrode is formed; and a second substrate for relaying a drive signal to the blanking electrode, wherein the transmission line is introduced into the second substrate, The stub line is branched from the transmission line on the second substrate and is connected to the first substrate through a joining member. 2. The electron beam exposure apparatus according to claim 1, wherein the electron beam exposure apparatus is introduced into a substrate, wired on the first substrate, and connected to the blanking electrode.   2. A drive profile monitor for observing a drive characteristic of a drive signal for driving the blanking electrode, and observing the drive characteristic at a termination position of the transmission line connected to the terminator. The electron beam exposure apparatus as described in any one of -3.   A drive profile control unit that controls drive characteristics of a drive signal that drives the blanking electrode; a drive profile measurement unit that measures the drive characteristics at a termination position of the transmission line connected to the terminator; and the drive A calculation unit that calculates a correction parameter for correcting characteristics, the calculation unit calculates the correction parameter based on a measurement result of the drive profile measurement unit, and the drive profile control unit includes the correction parameter. The electron beam exposure apparatus according to claim 1, wherein the driving characteristics are controlled based on the above. In an electron beam exposure apparatus that exposes a desired pattern by irradiating a sample with a plurality of electron beams ,
A blanking aperture array having a plurality of blanking electrodes and a plurality of apertures, each controlling irradiation of the plurality of electron beam beams;
One end is connected to a driver that outputs a drive signal for driving the blanking electrode, the other end is connected to a terminator for terminating the drive signal, and a transmission line for transmitting the drive signal for driving the blanking electrode When,
A plurality of stub lines connected to the plurality of blanking electrodes from the transmission line between the driver and the terminator,
2. The electron beam exposure apparatus according to claim 1, wherein lengths of the plurality of stub lines from the transmission line to the blanking electrode are substantially equal.   A device manufacturing method comprising: exposing a sample using the electron beam exposure apparatus according to claim 1; and developing the exposed sample.

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