JP4401647B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4401647B2
JP4401647B2 JP2002344069A JP2002344069A JP4401647B2 JP 4401647 B2 JP4401647 B2 JP 4401647B2 JP 2002344069 A JP2002344069 A JP 2002344069A JP 2002344069 A JP2002344069 A JP 2002344069A JP 4401647 B2 JP4401647 B2 JP 4401647B2
Authority
JP
Japan
Prior art keywords
laser
film
semiconductor film
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002344069A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003229432A (ja
JP2003229432A5 (enExample
Inventor
舜平 山崎
明久 下村
久 大谷
正明 ▲ひろ▼木
幸一郎 田中
愛子 志賀
麻衣 秋葉
健司 笠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002344069A priority Critical patent/JP4401647B2/ja
Publication of JP2003229432A publication Critical patent/JP2003229432A/ja
Publication of JP2003229432A5 publication Critical patent/JP2003229432A5/ja
Application granted granted Critical
Publication of JP4401647B2 publication Critical patent/JP4401647B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2002344069A 2001-11-30 2002-11-27 半導体装置の作製方法 Expired - Fee Related JP4401647B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002344069A JP4401647B2 (ja) 2001-11-30 2002-11-27 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001367612 2001-11-30
JP2001-367612 2001-11-30
JP2002344069A JP4401647B2 (ja) 2001-11-30 2002-11-27 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003229432A JP2003229432A (ja) 2003-08-15
JP2003229432A5 JP2003229432A5 (enExample) 2006-01-12
JP4401647B2 true JP4401647B2 (ja) 2010-01-20

Family

ID=27759597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002344069A Expired - Fee Related JP4401647B2 (ja) 2001-11-30 2002-11-27 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4401647B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI291729B (en) 2001-11-22 2007-12-21 Semiconductor Energy Lab A semiconductor fabricating apparatus
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
KR100967824B1 (ko) 2001-11-30 2010-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제작방법
EP1329946A3 (en) 2001-12-11 2005-04-06 Sel Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including a laser crystallization step
US7214573B2 (en) 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
JP2004103628A (ja) * 2002-09-05 2004-04-02 Hitachi Ltd レーザアニール装置及びｔｆｔ基板のレーザアニール方法
JP5159021B2 (ja) * 2003-12-02 2013-03-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2005210103A (ja) * 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法
JP2006066908A (ja) 2004-07-30 2006-03-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP5030130B2 (ja) * 2005-10-19 2012-09-19 株式会社日本製鋼所 薄膜材料の結晶化装置
CN102097368A (zh) * 2010-11-08 2011-06-15 昆山工研院新型平板显示技术中心有限公司 一种低温多晶硅薄膜晶体管阵列基板的制造方法
JP2012099834A (ja) * 2011-12-19 2012-05-24 Fuji Electric Co Ltd Ｍｏｓゲート型炭化珪素半導体装置の製造方法
US8501638B1 (en) * 2012-04-27 2013-08-06 Ultratech, Inc. Laser annealing scanning methods with reduced annealing non-uniformities
KR20140114542A (ko) 2013-03-18 2014-09-29 삼성디스플레이 주식회사 레이저빔 어닐링 장치 및 그 제어방법
CN116652411A (zh) * 2023-07-17 2023-08-29 宁波江丰电子材料股份有限公司 一种加工后的电子封装用钼铜合金及其加工方法和用途

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000243970A (ja) * 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
JP2000277450A (ja) * 1999-03-24 2000-10-06 Matsushita Electric Ind Co Ltd レーザアニール装置及びこの装置を用いた薄膜トランジスタの製造方法
JP3897965B2 (ja) * 1999-08-13 2007-03-28 株式会社半導体エネルギー研究所 レーザー装置及びレーザーアニール方法

Also Published As

Publication number Publication date
JP2003229432A (ja) 2003-08-15

Similar Documents

Publication Publication Date Title
KR100967824B1 (ko) 반도체장치의 제작방법
KR100915104B1 (ko) 반도체 장치의 제조 방법
KR101188356B1 (ko) 레이저 조사장치, 레이저 조사방법 및 반도체장치의제조방법
KR101025776B1 (ko) 레이저 조사장치, 레이저 조사방법 및 반도체장치의제작방법
CN100440538C (zh) 半导体装置和半导体装置制造系统
JP2012178600A (ja) 半導体装置の作製方法
JP2005191546A (ja) レーザ照射装置、レーザ照射方法及び半導体装置の作製方法
JP2003229432A (ja) 半導体装置の作製方法
JP2005333117A (ja) レーザ照射装置及び半導体装置の作製方法
JP4519400B2 (ja) 半導体装置の作製方法
JP3878126B2 (ja) 半導体装置の作製方法
JP3878118B2 (ja) 半導体装置の作製方法
JP2004146823A (ja) レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法
JP4169073B2 (ja) 薄膜半導体装置および薄膜半導体装置の製造方法
JP4627135B2 (ja) 半導体装置の生産方法
JP2003257865A (ja) 半導体装置及び半導体装置の生産システム

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051116

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051116

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060301

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090915

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091001

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091027

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091028

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121106

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121106

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121106

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131106

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees