JP4401647B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4401647B2 JP4401647B2 JP2002344069A JP2002344069A JP4401647B2 JP 4401647 B2 JP4401647 B2 JP 4401647B2 JP 2002344069 A JP2002344069 A JP 2002344069A JP 2002344069 A JP2002344069 A JP 2002344069A JP 4401647 B2 JP4401647 B2 JP 4401647B2
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- Prior art keywords
- laser
- film
- semiconductor film
- manufacturing
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims description 149
- 238000000034 method Methods 0.000 title claims description 132
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000010408 film Substances 0.000 claims description 217
- 239000000758 substrate Substances 0.000 claims description 72
- 239000013078 crystal Substances 0.000 claims description 45
- 239000003550 marker Substances 0.000 claims description 43
- 230000010355 oscillation Effects 0.000 claims description 40
- 230000015572 biosynthetic process Effects 0.000 claims description 21
- 238000002425 crystallisation Methods 0.000 claims description 20
- 238000000059 patterning Methods 0.000 claims description 18
- 230000008025 crystallization Effects 0.000 claims description 17
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 239000007790 solid phase Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 229910001347 Stellite Inorganic materials 0.000 claims 1
- AHICWQREWHDHHF-UHFFFAOYSA-N chromium;cobalt;iron;manganese;methane;molybdenum;nickel;silicon;tungsten Chemical compound C.[Si].[Cr].[Mn].[Fe].[Co].[Ni].[Mo].[W] AHICWQREWHDHHF-UHFFFAOYSA-N 0.000 claims 1
- 239000010979 ruby Substances 0.000 claims 1
- 229910001750 ruby Inorganic materials 0.000 claims 1
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- 239000010410 layer Substances 0.000 description 40
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- 230000003287 optical effect Effects 0.000 description 23
- 238000005530 etching Methods 0.000 description 22
- 238000005499 laser crystallization Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
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- 238000010586 diagram Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 8
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- 238000004544 sputter deposition Methods 0.000 description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000001994 activation Methods 0.000 description 5
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- 238000007715 excimer laser crystallization Methods 0.000 description 3
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
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- 239000001257 hydrogen Substances 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
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- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 150000001875 compounds Chemical class 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
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- 229910052715 tantalum Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical compound [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
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- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002344069A JP4401647B2 (ja) | 2001-11-30 | 2002-11-27 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-367612 | 2001-11-30 | ||
| JP2001367612 | 2001-11-30 | ||
| JP2002344069A JP4401647B2 (ja) | 2001-11-30 | 2002-11-27 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003229432A JP2003229432A (ja) | 2003-08-15 |
| JP2003229432A5 JP2003229432A5 (enrdf_load_stackoverflow) | 2006-01-12 |
| JP4401647B2 true JP4401647B2 (ja) | 2010-01-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002344069A Expired - Fee Related JP4401647B2 (ja) | 2001-11-30 | 2002-11-27 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4401647B2 (enrdf_load_stackoverflow) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7050878B2 (en) | 2001-11-22 | 2006-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductror fabricating apparatus |
| US6979605B2 (en) | 2001-11-30 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for a semiconductor device using a marker on an amorphous semiconductor film to selectively crystallize a region with a laser light |
| US7133737B2 (en) | 2001-11-30 | 2006-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer |
| EP1329946A3 (en) | 2001-12-11 | 2005-04-06 | Sel Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including a laser crystallization step |
| US7214573B2 (en) | 2001-12-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device that includes patterning sub-islands |
| JP2004103628A (ja) * | 2002-09-05 | 2004-04-02 | Hitachi Ltd | レーザアニール装置及びｔｆｔ基板のレーザアニール方法 |
| JP5159021B2 (ja) * | 2003-12-02 | 2013-03-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2005210103A (ja) * | 2003-12-26 | 2005-08-04 | Semiconductor Energy Lab Co Ltd | レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法 |
| JP2006066908A (ja) | 2004-07-30 | 2006-03-09 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP5030130B2 (ja) * | 2005-10-19 | 2012-09-19 | 株式会社日本製鋼所 | 薄膜材料の結晶化装置 |
| CN102097368A (zh) * | 2010-11-08 | 2011-06-15 | 昆山工研院新型平板显示技术中心有限公司 | 一种低温多晶硅薄膜晶体管阵列基板的制造方法 |
| JP2012099834A (ja) * | 2011-12-19 | 2012-05-24 | Fuji Electric Co Ltd | Ｍｏｓゲート型炭化珪素半導体装置の製造方法 |
| US8501638B1 (en) * | 2012-04-27 | 2013-08-06 | Ultratech, Inc. | Laser annealing scanning methods with reduced annealing non-uniformities |
| KR20140114542A (ko) | 2013-03-18 | 2014-09-29 | 삼성디스플레이 주식회사 | 레이저빔 어닐링 장치 및 그 제어방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000243970A (ja) * | 1999-02-24 | 2000-09-08 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法 |
| JP2000277450A (ja) * | 1999-03-24 | 2000-10-06 | Matsushita Electric Ind Co Ltd | レーザアニール装置及びこの装置を用いた薄膜トランジスタの製造方法 |
| JP3897965B2 (ja) * | 1999-08-13 | 2007-03-28 | 株式会社半導体エネルギー研究所 | レーザー装置及びレーザーアニール方法 |
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2002
- 2002-11-27 JP JP2002344069A patent/JP4401647B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003229432A (ja) | 2003-08-15 |
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