JP4395020B2 - Stripping composition for resist removal - Google Patents

Stripping composition for resist removal Download PDF

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JP4395020B2
JP4395020B2 JP2004203078A JP2004203078A JP4395020B2 JP 4395020 B2 JP4395020 B2 JP 4395020B2 JP 2004203078 A JP2004203078 A JP 2004203078A JP 2004203078 A JP2004203078 A JP 2004203078A JP 4395020 B2 JP4395020 B2 JP 4395020B2
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ether
stripping
resist
diethylene glycol
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JP2005031682A (en
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錫 壹 尹
聖 培 金
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Dongjin Semichem Co Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133514Colour filters
    • G02F1/133516Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1337Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007Filters, e.g. additive colour filters; Components for display devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only

Description

本発明はTFT-LCD用カラーレジストを除去するための剥離液組成物に関し、より詳しくはカラーフィルター工程中に発生する不良基板のカラーレジストのみを除去し、ブラックマスクまたはガラス基板を再使用するためのTFT-LCD用カラーレジストを除去するための剥離液組成物に関する。   The present invention relates to a stripping solution composition for removing a color resist for TFT-LCD, and more specifically, for removing only a defective color resist of a substrate generated during a color filter process and reusing a black mask or a glass substrate. The present invention relates to a stripping solution composition for removing the color resist for TFT-LCD.

カラーフィルター基板はカラーフィルター赤、緑、青パターンと各画素の間の漏れ光を遮断し、対比を向上させるための役割を果たすブラックマトリックス、そして液晶セルに電圧を印加する共通電極で構成されている。カラーフィルターを作る工程は次の通りである。   The color filter substrate is composed of a black matrix that plays the role of improving the contrast, and a common electrode that applies voltage to the liquid crystal cell, blocking the leakage light between the color filter red, green and blue patterns and each pixel. Yes. The process of making a color filter is as follows.

用途によってガラス基板上にブラックマトリックス材料として用いられるCr/CrOxまたは有機材料をガラス基板に塗布し、パターンを形成する。ブラックマスクパターンを形成した後、色相実現のためのカラーレジストパターンは写真工程技術によって形成される。カラーレジストをガラス基板上に塗布して露光させ、光重合反応によってカラーレジストを硬化させる。露光が終わった後、カラーレジストは現像によって露光されていない部分が除去され、焼成過程を経る。   Depending on the application, Cr / CrOx or an organic material used as a black matrix material is coated on a glass substrate to form a pattern. After forming the black mask pattern, a color resist pattern for realizing a hue is formed by a photographic process technique. A color resist is applied onto a glass substrate and exposed, and the color resist is cured by a photopolymerization reaction. After the exposure is completed, the unexposed portions of the color resist are removed by development, and a baking process is performed.

カラーレジストは顔料分散法、染色法、電着法などによって製造され、このうち顔料分散法が主に用いられる。一般にカラーレジストにはフォトレジストのような感光組成物である光重合開始剤、単量体、バインダーなどに色相を実現する有機顔料が分散されている。前記光重合開始剤は光を受けてラジカルを発生させる高感度化合物であり、単量体はラジカルによって重合反応開始後、高分子形態で結合されて現像溶剤に溶けない形態となる。バインダーは常温で液体状態の単量体を現像液から保護し、顔料分散の安定化及び赤、緑、青パターンの耐熱性、耐光性、耐薬品性などの信頼性を左右する。   The color resist is manufactured by a pigment dispersion method, a dyeing method, an electrodeposition method or the like, and among these, the pigment dispersion method is mainly used. In general, in a color resist, an organic pigment that realizes a hue is dispersed in a photopolymerization initiator, a monomer, a binder, or the like, which is a photosensitive composition such as a photoresist. The photopolymerization initiator is a high-sensitivity compound that receives light to generate radicals, and the monomer is combined in a polymer form after the polymerization reaction is initiated by the radicals and is not soluble in the developing solvent. The binder protects the monomer in the liquid state at room temperature from the developer, and affects the reliability of the pigment dispersion and the heat resistance, light resistance and chemical resistance of the red, green and blue patterns.

現在、カラーフィルター工程で発生する不良カラーフィルター基板のカラーレジストは1度硬化されれば、パターンが不良な部分のみを除去して修正することがほとんど不可能であり、また、カラーレジストを除去することができる溶剤がほとんどないため、不良カラーフィルターは修正などの再作業を経ずにほとんど直ちに廃棄処理されている。   At present, once the color resist of the defective color filter substrate generated in the color filter process is cured once, it is almost impossible to remove and correct only the defective portion of the pattern, and the color resist is removed. Because there is little solvent available, defective color filters are disposed of almost immediately without reworking.

カラーレジストはネガティブ型特性を持っているが、一般にネガティブ型レジストの場合、ポジティブ型に比べて剥離除去がむずかしい。そのために、ネガティブ型レジストは強力な剥離性能が要求されており、このような理由で従来は無機系剥離液とプラズマとを利用したRIE(reactive ion etching)を使用した。無機系剥離液の場合、硫酸、硝酸、発煙黄酸、硝酸と過酸化水素との混合液などを120℃以上の高温で加熱して使用すれば、作業者の安全性に悪影響を与えるだけでなく、加熱による火災の危険性増大で取り扱いに細心な注意を要しなければならない問題点がある。前記無機系剥離液に対する具体的な例は、アルキルベンゼンスルホン酸と沸点が150℃以上である非ハロゲン化芳香族炭化水素系溶剤の混合液が(例えば、特許文献1参照)、アルキルアリールスルホン酸と水性芳香族スルホン酸、非ハロゲン化芳香族炭化水素系溶剤の混合液が(例えば、特許文献2参照)、有機スルホン酸と1,2-ジヒドロキシベンゼンに極性または非極性有機溶剤を添加したストリッパーが(例えば、特許文献3参照)各々開示されている。   Color resists have negative characteristics, but in general, negative resists are more difficult to remove and remove than positive resists. Therefore, negative resists are required to have strong stripping performance. For this reason, conventionally, RIE (reactive ion etching) using an inorganic stripping solution and plasma has been used. In the case of an inorganic stripping solution, heating sulfuric acid, nitric acid, fuming yellow acid, a mixture of nitric acid and hydrogen peroxide, etc., at a high temperature of 120 ° C or higher will only adversely affect the safety of workers. However, there is a problem that requires careful handling because of the increased risk of fire due to heating. Specific examples of the inorganic stripping solution include a mixed solution of an alkylbenzene sulfonic acid and a non-halogenated aromatic hydrocarbon solvent having a boiling point of 150 ° C. or higher (see, for example, Patent Document 1), an alkyl aryl sulfonic acid, A mixed liquid of an aqueous aromatic sulfonic acid and a non-halogenated aromatic hydrocarbon solvent (see, for example, Patent Document 2) is a stripper obtained by adding a polar or nonpolar organic solvent to an organic sulfonic acid and 1,2-dihydroxybenzene. (See, for example, Patent Document 3) Each is disclosed.

プラズマを利用したRIEを利用した方法の場合、一般的な湿式エッチングでは除去が不可能な硬化カラーレジストのエッチングはO-RIE、SF-RIEを連続的に使用して除去する方法が(例えば、特許文献4参照)、吸収層としてポリエステル、ポリアミド、ノボラックレジンを使用し、障壁層としてはポリシラン、ポリシロキサン、有機シリコン化合物、シリカ、シリコンニトリドの混合物を使用する硬化されたカラーレジストを、吸収層としては酸素を利用したプラズマで、障壁層としては六フッ化硫黄や三フッ化窒素を利用したRIEを使用する方法が(例えば、特許文献5参照)各々開示されている。しかし、このようなプラズマを利用したカラーフィルターのエッチングは高真空、高エネルギーが必要であり、工程条件を合わせることが難しく、大面積には使用し難いという点と装備の高価などのような短所を持っている。 In the case of a method using RIE using plasma, etching of a cured color resist, which cannot be removed by general wet etching, can be performed by continuously using O 2 -RIE and SF 6 -RIE ( For example, see Patent Document 4), a cured color resist using a polyester, polyamide, novolac resin as an absorption layer, and a mixture of polysilane, polysiloxane, organosilicon compound, silica, silicon nitride as a barrier layer. A method using plasma using oxygen as the absorption layer and RIE using sulfur hexafluoride or nitrogen trifluoride as the barrier layer is disclosed (for example, see Patent Document 5). However, etching of color filters using such plasma requires high vacuum and high energy, making it difficult to match the process conditions, making it difficult to use in large areas, and disadvantages such as expensive equipment. have.

前記従来の技術の例から分かるように、従来のカラーレジスト除去方法では安定的に大量のカラーレジストを除去することが困難であるために、作業者の安全性が問題となったり、生産性または収率が落ちる問題点がある。
特開昭51−72503号公報 米国特許第4,165,294号明細書 ヨーロッパ特許公報第0119337号公報 米国特許第5,756,239号明細書 米国特許第5,059,500号明細書
As can be seen from the prior art examples, since it is difficult to stably remove a large amount of color resist by the conventional color resist removing method, the safety of workers becomes a problem, productivity or There is a problem that the yield falls.
JP 51-72503 A US Pat. No. 4,165,294 European Patent Publication No. 0119337 US Pat. No. 5,756,239 US Pat. No. 5,059,500

したがって、本発明は前記のような従来技術の問題点を解決するためのものであって、カラーレジストパターンの除去が困難でほとんど廃棄されていた不良カラーフィルター基板を再使用して生産収率を向上させることができるTFT-LCDのカラーフィルター製造工程中に使用されるカラーレジスト等を除去するためのレジスト除去用剥離液組成物を提供することを目的とする。   Therefore, the present invention is for solving the problems of the prior art as described above, and it is difficult to remove the color resist pattern, and it is difficult to remove the defective color filter substrate which has been almost discarded. It is an object of the present invention to provide a resist remover composition for removing a color resist or the like used in a TFT-LCD color filter manufacturing process that can be improved.

前記目的を達成するために、本発明は
(a)酸化アルキルアンモニウム1〜10重量%、
(b)ジメチルスルホキシド40〜95重量%、及び
(c)水4〜50重量%を含み、
無機アルカリアセテートを、前記(a)、(b)及び(c)を合わせた100重量部に対して0.05乃至111重量部含むことを特徴とするレジスト除去用剥離液組成物を提供する。
To achieve the above object, the present invention is (a) 1 to 10% by weight of water oxidation alkylammonium,
(B) dimethyl sulfoxide 40-95 wt%, and (c) 4 to 50% by weight of water seen including,
The inorganic alkali acetate, the (a), (b) providing a and resist removing stripping liquid composition, characterized in 0.05 to 111 parts by weight containing Mukoto per 100 parts by weight of the combined (c) .

好ましくは、本発明の組成物は(d)水溶性アミン化合物、N-アルキル-2-ピロリドン、アルキレングリコールエーテル、びアルカノールアミンからなる群より1種以上選択される化合物を前記(a)、(b)及び(c)を合わせた100重量部に対して0.05乃至111重量部さらに含むことができる。 Preferably, the compositions of the present invention (d) In the water-soluble amine compound, N- alkyl-2-pyrrolidone, alkylene glycol ether, wherein one or more compound selected from the group consisting beauty alkanolamine (a), It may further include 0.05 to 111 parts by weight with respect to 100 parts by weight of the total of (b) and (c) .

本発明によるレジスト除去用剥離液組成物は、カラーレジストを短時間内に容易に除去することができる。また、カラーレジスト除去工程中の下部金属配線の腐蝕を最少化することができ、後続するリンス工程でイソプロピルアルコール、ジメチルスルホキシドのような有機溶剤を使用する必要なく、水のみでリンスすることができるという長所がある。   The stripping composition for resist removal according to the present invention can easily remove the color resist within a short time. In addition, the corrosion of the lower metal wiring during the color resist removing process can be minimized, and it is possible to rinse with only water without using an organic solvent such as isopropyl alcohol or dimethyl sulfoxide in the subsequent rinsing process. There is an advantage.

以下、本発明を詳細に説明する。   Hereinafter, the present invention will be described in detail.

本発明はTFT-LCDのカラーフィルター工程中に発生する不良の基板を再使用するためにカラーレジストパターンなどを除去するための剥離液組成物に関する。   The present invention relates to a stripping solution composition for removing a color resist pattern and the like in order to reuse a defective substrate generated during a color filter process of a TFT-LCD.

本発明のレジスト除去用剥離液組成物は、a)無機アルカリヒドロキシドまたは水酸化アルキルアンモニウムを含む。カラーフィルター工程の場合、残留金属に大きな影響を受けないので、無機系アルカリヒドロキシドの使用が可能である。前記水酸化アルキルアンモニウムは安定でないため水に溶けている状態で用いるのが好ましい。   The stripping composition for resist removal of the present invention contains a) inorganic alkali hydroxide or alkylammonium hydroxide. In the case of the color filter process, inorganic alkali hydroxide can be used because it is not greatly affected by the residual metal. Since the alkylammonium hydroxide is not stable, it is preferably used in a state dissolved in water.

前記無機アルカリヒドロキシドまたは水酸化アルキルアンモニウム成分の含量は全組成物に対して1〜10重量%が好ましい。前記無機アルカリヒドロキシドまたは水酸化アルキルアンモニウムの含量が1重量%未満であれば、カラーレジストを構成する高分子成分への浸透能力が落ちてカラーレジストを完全に除去するのが難しく、10重量%を超えれば膨潤現象のみ激しくなり、カラーレジストの高分子成分に対する溶解性能が低下する。   The content of the inorganic alkali hydroxide or alkylammonium hydroxide component is preferably 1 to 10% by weight based on the total composition. If the content of the inorganic alkali hydroxide or alkylammonium hydroxide is less than 1% by weight, it is difficult to completely remove the color resist due to a decrease in the ability to penetrate the polymer component constituting the color resist. If it exceeds 1, only the swelling phenomenon becomes intense, and the dissolution performance of the color resist with respect to the polymer component decreases.

前記無機アルカリヒドロキシドは水酸化ナトリウム、及び水酸化カリウムからなる群より1種以上選択して使用するのが好ましい。前記水酸化アルキルアンモニウムは水酸化テトラエチルアンモニウム、水酸化テトラメチルアンモニウム、水酸化テトラブチルアンモニウム、水酸化トリメチルベンジルアンモニウム、及び水酸化アンモニウムからなる群より1種以上選択して使用するのが好ましい。   It is preferable to use at least one inorganic alkali hydroxide selected from the group consisting of sodium hydroxide and potassium hydroxide. The alkyl ammonium hydroxide is preferably used by selecting one or more kinds from the group consisting of tetraethylammonium hydroxide, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, trimethylbenzylammonium hydroxide, and ammonium hydroxide.

また、本発明のレジスト除去用剥離液組成物は、b)ジメチルスルホキシドを含む。前記ジメチルスルホキシドはカラーレジストを構成している高分子に浸透し、カラーレジストをガラス基板から分離する役割を果たす。本発明の剥離液組成物でジメチルスルホキシドの含量は全組成物に対して40〜95重量%が好ましい。前記ジメチルスルホキシドの含量が40重量%未満であれば、カラーレジストへの浸透力が弱くなるため完全に除去できない問題点があり、95重量%を超えれば、カラーレジスト剥離液組成物の粘度と融点とを上昇させて使用時に便利性を低下させる問題点がある。   Moreover, the stripping solution composition for resist removal of this invention contains b) dimethyl sulfoxide. The dimethyl sulfoxide penetrates into a polymer constituting the color resist and plays a role of separating the color resist from the glass substrate. In the stripping composition of the present invention, the content of dimethyl sulfoxide is preferably 40 to 95% by weight with respect to the total composition. If the dimethyl sulfoxide content is less than 40% by weight, there is a problem that it cannot be completely removed because the penetrating power to the color resist is weakened. If it exceeds 95% by weight, the viscosity and melting point of the color resist stripping solution composition. There is a problem in that the convenience is lowered during use.

本発明のレジスト除去用剥離液組成物において、c)水は必須成分であって、イオン交換樹脂によってろ過した純水を用いるのが好ましく、比抵抗が18MΩ以上である超純水を用いるのがさらに好ましい。   In the stripping composition for resist removal of the present invention, c) water is an essential component, and it is preferable to use pure water filtered with an ion exchange resin, and to use ultrapure water having a specific resistance of 18 MΩ or more. Further preferred.

前記水の含量は全組成物に対して4〜50重量%が好ましい。前記水の含量が4重量%未満であれば、水酸化アルキルアンモニウムを活性化させないためカラーレジストへの浸透力が弱くなり、水の含量が50重量%を超えれば、工程温度で水の蒸発による組成の変化が激しくてライフタイムの低下が示されるという問題点がある。   The water content is preferably 4 to 50% by weight based on the total composition. If the water content is less than 4% by weight, the alkylammonium hydroxide is not activated, so the penetrating power to the color resist is weakened. If the water content exceeds 50% by weight, the water is evaporated at the process temperature. There is a problem in that the composition changes drastically and the lifetime is reduced.

また、本発明のレジスト除去用剥離液組成物は、(d)水溶性アミン化合物、N-アルキル-2-ピロリドン、アルキレングリコールエーテル、びアルカノールアミンからなる群より1種以上選択される化合物を前記(a)、(b)及び(c)を合わせた100重量部に対して0.05乃至111重量部さらに含むことができる。 The resist removing stripping liquid composition of the present invention, (d) water-soluble amine compound, N- alkyl-2-pyrrolidone, alkylene glycol ether, a beauty is at least one selected from the group consisting of alkanolamine compound It may further include 0.05 to 111 parts by weight with respect to 100 parts by weight of the above (a), (b) and (c) .

前記水溶性アミン化合物は剥離液組成物の性能を向上させるために用いることができる。前記水溶性アミン化合物は水溶性ヒドロキシルアミン化合物を用いるのが好ましい。前記ヒドロキシルアミンは水の水素イオンと反応して発生した水酸化イオンがカラーレジストと基板との間の接触面に効果的に浸透するようにする機能を発揮し、高分子を溶解し高分子と顔料の接合剤を溶かす機能がある。前記ヒドロキシルアミンは50%水溶液状態のものを用いるのが好ましい。前記水溶性アミン化合物の使用含量は前記(a)、(b)及び(c)を合わせた100重量部に対して2〜20重量部が好ましい。前記水溶性アミン化合物の含量が2重量部未満であれば、カラーレジストを完全に除去することが難しく、20重量部を超えれば下部膜質に対する腐食性が大きくなるという問題点がある。 The water-soluble amine compound can be used to improve the performance of the stripping composition. The water-soluble amine compound is preferably a water-soluble hydroxylamine compound. The hydroxylamine exhibits a function of allowing hydroxyl ions generated by reacting with hydrogen ions of water to effectively penetrate into the contact surface between the color resist and the substrate. It has the function of dissolving the pigment bonding agent. The hydroxylamine is preferably used in a 50% aqueous solution state. The use amount of the water-soluble amine compound is preferably 2 to 20 parts by weight with respect to 100 parts by weight of the total of (a), (b) and (c) . If the content of the water-soluble amine compound is less than 2 parts by weight, it is difficult to completely remove the color resist, and if it exceeds 20 parts by weight, the corrosiveness to the lower film quality increases.

本発明によるレジスト除去用剥離液組成物において、性能を向上させるために前記N-アルキル-2-ピロリドンを使用することもでき、N-アルキル-2-ピロリドンは高分子を溶解させ膨潤させる機能がある。前記N-アルキル-2-ピロリドンの含量は前記(a)、(b)及び(c)を合わせた100重量部に対して2〜20重量部が好ましい。前記N-アルキル-2-ピロリドンの含量が2重量部未満であれば、カラーレジストへの構成成分である高分子に対する溶解力が低下し、20重量部を超えれば他の成分の含量が減ってカラーレジストへの浸透力を弱化させる問題点がある。 In the stripping solution composition for resist removal according to the present invention, the N-alkyl-2-pyrrolidone may be used to improve performance, and N-alkyl-2-pyrrolidone has a function of dissolving and swelling a polymer. is there. The content of the N-alkyl-2-pyrrolidone is preferably 2 to 20 parts by weight with respect to 100 parts by weight of the total of (a), (b) and (c) . If the content of the N-alkyl-2-pyrrolidone is less than 2 parts by weight, the solubility of the polymer as a constituent component in the color resist is reduced, and if it exceeds 20 parts by weight, the content of other components is reduced. There is a problem of weakening the penetrating power to the color resist.

前記N-アルキル-2-ピロリドンはN-エチル-2-ピロリドン、及びN-メチル-2-ピロリドンからなる群より1種以上選択して用いるのが好ましい。   The N-alkyl-2-pyrrolidone is preferably selected from the group consisting of N-ethyl-2-pyrrolidone and N-methyl-2-pyrrolidone.

本発明によるレジスト除去用剥離液組成物は、性能を向上させるためにアルキレングリコールエーテルを用いることができ、アルキレングリコールエーテルはガラス基板からカラーレジストを剥離する特徴があり、分子に浸透し高分子と顔料粒子の接合剤を溶解する役割を果たす。前記アルキレングリコールエーテルの含量は前記(a)、(b)及び(c)を合わせた100重量部に対して2〜50重量部が好ましい。前記アルキレングリコールエーテルの含量が2重量部未満であればカラーレジストの溶解能力が低下し、50重量部を超えればジメチルスルホキシドの含量が減って浸透力が弱くなる。 The stripping composition for removing a resist according to the present invention can use an alkylene glycol ether to improve performance, and the alkylene glycol ether has a feature of stripping a color resist from a glass substrate, penetrates the molecule, and It plays the role of dissolving the binder of pigment particles. The content of the alkylene glycol ether is preferably 2 to 50 parts by weight with respect to 100 parts by weight of the total of (a), (b) and (c) . When the content of the alkylene glycol ether is less than 2 parts by weight, the dissolving ability of the color resist is lowered, and when it exceeds 50 parts by weight, the content of dimethyl sulfoxide is reduced and the penetrating power is weakened.

前記アルキレングリコールエーテルはジエチレングリコールエチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノブチルエーテル、ジエチレングリコールジアセテート、ジエチレングリコールモノブチルエーテルアセテート、ジエチレングリコールモノエチルエーテル、ジプロピレングリコールモノプロピルエーテル、ジプロピレングリコールモノブチルエーテル、及びジプロピレングリコールモノエチルエーテルからなる群より1種以上選択して用いるのが好ましい。   The alkylene glycol ether is diethylene glycol ethyl ether, diethylene glycol dimethyl ether, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, diethylene glycol diacetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether, and dipropylene. It is preferable to use one or more selected from the group consisting of glycol monoethyl ether.

また、本発明によるレジスト除去用剥離液組成物において、性能を向上させるために無機アルカリアセテートを用いる無機アルカリアセテートは高分子または染料に浸透して水酸化アルキルアンモニウム及び水酸化アルキルアリールアンモニウムの機能を向上させる機能がある。前記無機アルカリアセテートの含量は前記(a)、(b)及び(c)を合わせた100重量部に対して0.05〜1重量部が好ましい。前記無機アルカリアセテート含量が0.05重量部未満であればカラーレジスト構成成分である高分子への浸透能力に対する機能向上を期待することができず、1重量部を超えれば本組成中、水の重量部に対する無機アルカリアセテートの溶解力が低下して析出を引き起こす問題点がある。 In the resist removing stripping liquid composition according to the present invention, an inorganic alkali acetate to improve performance. The inorganic alkali acetate has a function of improving the functions of alkyl ammonium hydroxide and alkyl aryl ammonium hydroxide by penetrating into the polymer or dye. The content of the inorganic alkali acetate is preferably 0.05 to 1 part by weight with respect to 100 parts by weight of the total of (a), (b) and (c) . If the inorganic alkali acetate content is less than 0.05 parts by weight, it cannot be expected to improve the function of penetrating into the polymer that is a color resist component, and if it exceeds 1 part by weight, There is a problem in that the dissolving ability of the inorganic alkali acetate with respect to parts by weight is lowered to cause precipitation.

前記無機アルカリアセテートは酢酸カリウム、及び酢酸ナトリウムからなる群より1種以上選択して用いるのが好ましい。   It is preferable to use at least one inorganic alkali acetate selected from the group consisting of potassium acetate and sodium acetate.

本発明によるレジスト除去用剥離液組成物において、性能を向上させるためにアルカノールアミンを用いることができ、アルカノールアミンは感光性化合物に対する溶解力が優れていて高分子の間に水酸化アルキルアンモニウムの浸透を容易にする役割を果たし、高分子と顔料の接合剤を溶かす機能もある。前記アルカノールアミンの含量は前記(a)、(b)及び(c)を合わせた100重量部に対して2〜20重量部が好ましい。前記アルカノールアミンの含量が2重量部未満であれば、感光性化合物及び接合剤を溶かす機能が低下して機能向上を期待することができず、20重量部を超えれば他の成分の含量が減ってカラーレジスト除去性能に良くない影響を与えるという問題点がある。 In the stripping composition for removing a resist according to the present invention, alkanolamine can be used to improve the performance, and alkanolamine has excellent dissolving power for a photosensitive compound, so that alkylammonium hydroxide penetrates between polymers. It also has the function of dissolving the polymer and pigment binder. The content of the alkanolamine is preferably 2 to 20 parts by weight with respect to 100 parts by weight of the total of (a), (b) and (c) . When the content of the alkanolamine is less than 2 parts by weight, the function of dissolving the photosensitive compound and the bonding agent is lowered and the function cannot be expected to be improved. When the content exceeds 20 parts by weight, the content of other components is decreased. This has the problem of adversely affecting the color resist removal performance.

前記アルカノールアミンはモノエタノールアミン、ジエタノールアミン、トリエタノールアミン、メチルエタノールアミン、エチルエタノールアミン、ジメチルエタノールアミン、ジエチルエタノールアミン、及びアミノエトキシエタノールからなる群より1種以上選択して用いるのが好ましい。   The alkanolamine is preferably selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, methylethanolamine, ethylethanolamine, dimethylethanolamine, diethylethanolamine, and aminoethoxyethanol.

以下、本発明を実施例を通じてより詳細に説明するが、本発明の範囲が下記の実施例に限定されるわけではない。一方、下記の実施例において別途の言及がなければ百分率及び混合比は重量を基準とする。   EXAMPLES Hereinafter, although this invention is demonstrated in detail through an Example, the scope of the present invention is not necessarily limited to the following Example. On the other hand, in the following examples, the percentage and the mixing ratio are based on weight unless otherwise mentioned.

本発明の実施例及び比較例において、カラーレジスト剥離液組成物に対する性能評価はA社のカラーフィルター基板を使用してカラーレジストを除去する次の方法によって実施した。   In the examples and comparative examples of the present invention, the performance evaluation for the color resist stripping composition was carried out by the following method for removing the color resist using a color filter substrate of Company A.

(1)カラーレジスト除去試験
試片製造
下部にCr/CrOxが蒸着されているLCD corningガラスにカラーフィルターパターンを作り、カラーレジストは赤、緑、青の順に各々次の写真工程を利用して塗布した。汎用的に用いられるカラーレジスト組成物(東進セミケム社、商品名:DCR-725S)をスピンコーティングして最終膜の厚さが1.7μmになるように塗布した。次に、ホットプレートで前記レジスト膜を90℃で120秒間プリベーク(pre-bake)した。引続き、露光して2.38%水酸化テトラメチルアンモニウム(TMAH)現像液で21℃で60秒現像した後、オーブンで前記パターンが形成された試片を220℃で20分間ハードベークした。
(1) Color resist removal test
A color filter pattern was made on LCD corning glass with Cr / CrOx deposited at the bottom of the specimen manufacture , and the color resist was applied in the order of red, green and blue using the following photographic processes. A commonly used color resist composition (Toshin Semi-Chem, trade name: DCR-725S) was spin-coated and applied so that the final film thickness was 1.7 μm. Next, the resist film was pre-baked at 90 ° C. for 120 seconds using a hot plate. Subsequently, after exposure and development with a 2.38% tetramethylammonium hydroxide (TMAH) developer at 21 ° C. for 60 seconds, the specimen on which the pattern was formed was hard baked at 220 ° C. for 20 minutes.

カラーレジスト除去試験
試片を温度60℃でカラーレジスト除去のための剥離液組成物に各々5分、10分、15分間浸漬させた。続いて、前記試片をカラーレジスト剥離液組成物から取り出した後、超純水で洗浄して窒素ガスで乾燥した後、パターン内にカラーレジストの残留有無を走査電子顕微鏡(SEM)で検査してカラーレジスト除去性能を次のような基準に基づいて評価し、その結果を下記表2に示した。
The color resist removal test specimens were immersed in a stripping composition for removing the color resist at a temperature of 60 ° C. for 5 minutes, 10 minutes and 15 minutes, respectively. Subsequently, the specimen was taken out from the color resist stripping composition, washed with ultrapure water and dried with nitrogen gas, and then the presence or absence of the color resist in the pattern was inspected with a scanning electron microscope (SEM). The color resist removal performance was evaluated based on the following criteria, and the results are shown in Table 2 below.

◎:赤、緑、青パターン全て完全に除去された場合。   A: When all of the red, green and blue patterns are completely removed.

○:緑、青パターンのみ除去された場合。   ○: When only green and blue patterns are removed.

△:青パターンのみ除去された場合。   Δ: When only the blue pattern is removed.

×:赤、緑、青パターン全て除去されなかった場合。   X: When all the red, green and blue patterns are not removed.

(2)金属膜質腐食性試験
金属膜質腐食性試験
前記試片を温度60℃でカラーレジスト除去のための剥離液組成物に各々30分浸漬させた。続いて、前記試片をカラーレジスト剥離液組成物から取り出した後、超純水で洗浄し窒素ガスで乾燥した後、パターンの金属部アンダーカット現象の発生有無を走査電子顕微鏡で検査して腐蝕程度を次のような基準に基づいて評価し、その結果を下記表3に示した。
(2) Metal film corrosion test
Metal Film Corrosion Test Each of the specimens was immersed in a stripping solution composition for removing a color resist at a temperature of 60 ° C. for 30 minutes. Subsequently, the specimen was taken out from the color resist stripping composition, washed with ultrapure water and dried with nitrogen gas, and then inspected with a scanning electron microscope for the occurrence of undercut phenomenon in the metal part of the pattern. The degree was evaluated based on the following criteria, and the results are shown in Table 3 below.

○:下部金属膜質にアンダーカット現象がない場合
△:下部金属膜質にアンダーカット現象が一部ある場合
×:下部金属膜質にアンダーカット現象が激しく示された場合
実施例1〜7及び比較例1〜2
本発明による成分(a)〜(d)の含量を各々下記表1に示した比率で混合して各々実施例1〜7及び比較例1〜2のカラーレジスト剥離液組成物を製造した。このようにして得られたカラーレジスト剥離液組成物に対して前述した(1)カラーレジスト除去試験、(2)金属膜質腐食性試験を実施し、その結果を下記の表2及び3に示した。
○: When there is no undercut phenomenon in the lower metal film △: When there is a part of the undercut phenomenon in the lower metal film ×: When the undercut phenomenon is severely shown in the lower metal film
Examples 1-7 and Comparative Examples 1-2
The contents of the components (a) to (d) according to the present invention were mixed at the ratios shown in Table 1 below to prepare color resist stripping liquid compositions of Examples 1 to 7 and Comparative Examples 1 and 2, respectively. The color resist stripping solution composition thus obtained was subjected to the (1) color resist removal test and (2) metal film corrosion test described above, and the results are shown in Tables 2 and 3 below. .

Figure 0004395020
注)
TMAH: 水酸化テトラメチルアンモニウム
DMSO:ジメチルスルホキシド
HDA:ヒドロキシルアミン
NMP:N-メチル-2-ピロリドン
PGME:1-メトキシ-2-プロパノール
カルビトール:ジエチレングリコールモノエチルエーテル。
Figure 0004395020
note)
TMAH: Tetramethylammonium hydroxide
DMSO: Dimethyl sulfoxide
HDA: hydroxylamine
NMP: N-methyl-2-pyrrolidone
PGME: 1-methoxy-2-propanol carbitol: diethylene glycol monoethyl ether.

Figure 0004395020
Figure 0004395020

Figure 0004395020
前記表2及び3の結果から分かるように、本発明の実施例1乃至7の剥離液組成物は比較例1乃至2に比べて金属配線腐食性は従来と同等水準以上であり、特にカラーレジスト除去性能が非常に優れている。
Figure 0004395020
As can be seen from the results shown in Tables 2 and 3, the stripping compositions of Examples 1 to 7 of the present invention have a metal wiring corrosivity higher than that of Comparative Examples 1 and 2 in comparison with the prior art. The removal performance is very good.

図1は実施例5及び比較例1のカラーレジスト剥離液組成物のカラーレジスト除去性能を比較した走査電子顕微鏡(日立社、モデル名;S-4100)写真を示したものである。図1はカラーレジスト剥離液組成物の温度を60℃にして試験した結果を示したものである。   FIG. 1 shows a scanning electron microscope (Hitachi, model name: S-4100) photograph comparing the color resist removal performance of the color resist stripping compositions of Example 5 and Comparative Example 1. FIG. 1 shows the results of testing the color resist stripping composition at a temperature of 60 ° C.

図1に示すように、本発明の実施例5の剥離液組成物を使用した場合、比較例1に比べてカラーレジストがきれいに除去された。   As shown in FIG. 1, when the stripping composition of Example 5 of the present invention was used, the color resist was removed more cleanly than Comparative Example 1.

実施例5及び比較例1のカラーレジスト剥離液組成物の温度を60℃にしてカラーレジスト除去性能を比較した走査電子顕微鏡(日立社、モデル名;S-4100)の写真を示したものである。The photograph of the scanning electron microscope (Hitachi company, model name; S-4100) which made the temperature of the color resist peeling liquid composition of Example 5 and Comparative Example 1 60 degreeC, and compared the color resist removal performance is shown. .

Claims (9)

(a)酸化アルキルアンモニウム1〜10重量%、
(b)ジメチルスルホキシド40〜95重量%、及び
(c)水4〜50重量%を含み、
無機アルカリアセテートを、前記(a)、(b)及び(c)を合わせた100重量部に対して0.05乃至111重量部含むことを特徴とするレジスト除去用剥離液組成物。
(A) water oxidation alkylammonium 1 to 10% by weight,
(B) dimethyl sulfoxide 40-95 wt%, and (c) 4 to 50% by weight of water seen including,
The inorganic alkali acetate, the (a), (b) and resist removing stripping liquid composition, characterized in 0.05 to 111 parts by weight containing Mukoto per 100 parts by weight of the combined (c).
前記無機アルカリアセテートを、前記(a)、(b)及び(c)を合わせた100重量部に対して0.05乃至1重量部含むことを特徴とする請求項1に記載のレジスト除去用剥離液組成物。 2. The resist removing strip according to claim 1, comprising 0.05 to 1 part by weight of the inorganic alkali acetate with respect to 100 parts by weight of the total of (a), (b), and (c). Liquid composition. 前記水酸化アルキルアンモニウムは水酸化テトラエチルアンモニウム、水酸化テトラメチルアンモニウム、水酸化テトラブチルアンモニウム、水酸化トリメチルベンジルアンモニウム、及び水酸化アンモニウムからなる群より1種以上選択されることを特徴とする請求項1に記載のレジスト除去用剥離液組成物。 The alkyl ammonium hydroxide, tetraethyl ammonium hydroxide, tetramethyl ammonium hydroxide, tetrabutyl ammonium hydroxide, claims characterized in that it is at least one selected from the group consisting of trimethyl benzyl ammonium and ammonium hydroxide, Item 2. The stripping composition for resist removal according to Item 1. (d)水溶性アミン化合物、N-アルキル-2-ピロリドン、アルキレングリコールエーテル、びアルカノールアミンからなる群より1種以上選択される化合物を前記(a)、(b)及び(c)を合わせた100重量部に対して0.05乃至111重量部らに含むことを特徴とする請求項1に記載のレジスト除去用剥離液組成物。 (D) water-soluble amine compound, N- alkyl-2-pyrrolidone, alkylene glycol ethers, one or more compound selected from the group consisting beauty alkanolamine wherein (a), the combined (b) and (c) the resist removing stripping liquid composition according to claim 1, characterized in that it comprises 0.05 to 111 parts by weight of al relative to 100 parts by weight. 前記水溶性アミン化合物はヒドロキシルアミンであることを特徴とする請求項4に記載のレジスト除去用剥離液組成物。 The water-soluble amine compound, resist removing stripping liquid composition according to claim 4, characterized in that the hydroxylamine. 前記N-アルキル-2-ピロリドンはN-エチル-2-ピロリドン、及びN-メチル-2-ピロリドンからなる群より1種以上選択されることを特徴とする請求項4に記載のレジスト除去用剥離液組成物。 The N- alkyl-2-pyrrolidone, resist removal according to claim 4, characterized in that it is selected N- ethyl-2-pyrrolidone, and N- 1 or more from the group consisting of methyl-2-pyrrolidone Stripping composition. 前記アルキレングリコールエーテルは、ジエチレングリコールエチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノブチルエーテル、ジエチレングリコールジアセテート、ジエチレングリコールモノブチルエーテルアセテート、ジエチレングリコールモノエチルエーテル、ジプロピレングリコールモノプロピルエーテル、ジプロピレングリコールモノブチルエーテル、及びジプロピレングリコールモノエチルエーテルからなる群より1種以上選択されることを特徴とする請求項4に記載のレジスト除去用剥離液組成物。   The alkylene glycol ether is diethylene glycol ethyl ether, diethylene glycol dimethyl ether, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, diethylene glycol diacetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether, and diethylene glycol monobutyl ether. The stripping solution composition for resist removal according to claim 4, wherein at least one selected from the group consisting of propylene glycol monoethyl ether is selected. 前記無機アルカリアセテートは、酢酸カリウム、及び酢酸ナトリウムからなる群より1種以上選択されることを特徴とする請求項に記載のレジスト除去用剥離液組成物。 The stripping composition for removing a resist according to claim 1 , wherein the inorganic alkali acetate is selected from the group consisting of potassium acetate and sodium acetate. 前記アルカノールアミンはモノエタノールアミン、ジエタノールアミン、トリエタノールアミン、メチルエタノールアミン、エチルエタノールアミン、ジメチルエタノールアミン、ジエチルエタノールアミン、及びアミノエトキシエタノールからなる群より1種以上選択されることを特徴とする請求項4に記載のレジスト除去用剥離液組成物。 The alkanolamine is characterized monoethanolamine, diethanolamine, triethanolamine, methylethanolamine, ethyl ethanolamine, dimethylethanolamine, diethylethanolamine, and that it is at least one selected from the group consisting of amino ethoxy ethanol The stripping solution composition for resist removal according to claim 4.
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