KR20180087624A - Resist stripper composition - Google Patents

Abstract

The present invention relates to a resist stripping liquid composition. More particularly, the present invention relates to a resist stripping liquid composition comprising: 1-15 wt% of a quaternary ammonium salt compound; 20-60 wt% of aprotic polar organic solvent; 0.01-1 wt% of an inorganic base or a salt thereof; 1-20 wt% of a compound represented by chemical formula 1; and water as remainder. The substituent represented by chemical formula 1 is as defined in the specification. The present invention has an effect of enhancing the resist removal force.

Description

RESIST STRIPPER COMPOSITION [

The present invention relates to a resist stripper composition.

2. Description of the Related Art Recently, with the miniaturization of electronic devices, the integration and multilayering of semiconductor devices have progressed rapidly, and as a result, a photoresist (PR) pattern has been miniaturized, and a technique for stably forming micro- It became necessary.

A microcircuit of a semiconductor element or a liquid crystal display element is implemented through a photolithography process. In the photolithography step, a photoresist is uniformly applied to a conductive metal film such as aluminum, aluminum alloy, copper, copper alloy, molybdenum, or molybdenum alloy formed on the substrate, or an insulating film such as a silicon oxide film or a silicon nitride film, , And a development process is performed to form a photoresist pattern. Then, the conductive metal film and the insulation film are wet or dry etched using the patterned photoresist film as a mask to transfer the fine circuit pattern to the lower layer of the photoresist, Is removed with a stripper (stripper).

The photoresist used here has a difference in solubility in a developing solution upon irradiation with radiation, and is classified into a negative type or a positive type.

The negative type photoresist refers to a photoresist which is cured by exposure to light and is insoluble in a developing solution to be present as a pattern part. On the other hand, the development of the exposed portion is referred to as a positive photoresist.

The negative type photoresist is characterized by excellent sensitivity, heat resistance, and adhesiveness to a substrate, and is superior in plating resistance compared to a positive type photoresist and has an advantage that a good shape can be obtained even in a thick film having a thickness of 20 탆 or more. However, the negative type photoresist has a disadvantage that it is difficult to peel off or peel off as compared with the positive type photoresist.

A typical color resist of a negative type photoresist is embedded in a color photographing apparatus of an image sensor such as a complementary metal oxide semiconductor (CMOS) or a charge coupled device (CCD) And is also used as one of the most important components for realizing the color tone of a photographing element, a plasma display panel (PDP), a liquid crystal display (LCD), a field emission display (FEL) and a light emitting display (LED)

For example, a color filter substrate used in an LCD typically has red (R), green (G), and blue (B) patterns, a black matrix that blocks leakage light between each pixel and improves contrast, And a common electrode for applying a voltage to the electrodes.

In recent years, as the size of the display has been increased and fine patterning has progressed, a process of forming a color filter on an array where a driving circuit is formed is used to improve the aperture ratio and the production efficiency.

If the photoresist is cured once, it is almost impossible to repair only a wrong part, and since there is almost no solvent capable of removing the photoresist, There is a problem that the color filter is mostly disposed of immediately without being subjected to rework such as repair, and productivity is lowered.

To solve this problem, a composition for removing a cured photoresist has been developed.

As a photoresist peeling method, a wet peeling method using a peeling liquid is employed. In this case, the peeling liquid used should basically be able to completely remove the photoresist to be removed and leave no residue on the substrate after rinsing do. In addition, it should have low corrosion resistance so as not to damage the metal film or insulating film in the lower layer of the photoresist. In addition, if mutual reaction occurs between the compositions constituting the peeling liquid, storage stability of the peeling solution becomes problematic and other properties may be exhibited depending on the order of mixing in the preparation of the peeling solution, so that there is a need for non-reactivity and high temperature stability among the compositions. In addition, the handling of the peeling liquid is easy, and the toxicity is low and safe. In addition, the number of substrates that can be treated with an amount of a certain stripping liquid must be large, and the components constituting the stripping solution should be easily supplied and received.

Among the various conditions described above, the most important items should have excellent removal performance for the target color resist, and have low corrosion resistance so as not to damage the insulation film or the metal film in the lower layer of the color resist. To meet this demand, a color resist stripping liquid composition having various compositions has been researched and developed.

Korean Patent Laid-Open No. 10-2012-0024714 relates to a resist stripping composition and a method of manufacturing an electric element, and more particularly, to a resist stripping composition and a method of manufacturing an electric element, which do not include N-alkylpyrrolidone and hydroxylamine and hydroxylamine derivatives, Wherein the dynamic shear viscosity at 50 占 폚 as measured by a viscometer is from 1 to 10 mPas and is from about 0.06 to about 4% by weight, based on the total weight of the composition, of (A) A solvent exhibiting a constant removal rate for a 30 nm thick barrier antireflective layer containing deep ultraviolet light absorbing chromophore at 50 DEG C in the presence of ammonium (B), at least one polar organic (B) from 0.05 to <0.5% of quaternary ammonium hydroxide (B), and (C) <5% by weight of water based on the total weight of the composition It discloses that on the water.

Korean Patent Laid-Open Publication No. 10-2012-0023068 relates to a resist stripping composition and a method for producing an electric device, which comprises (A) 0.06 to 4% by weight, based on the total weight of each test solution (AB) At least one polar organic solvent selected from the group consisting of a solvent exhibiting a constant removal rate at 50 캜 for a 30 nm thick polymeric barrier antireflective layer comprising an extreme ultraviolet absorbing color developing group in the presence of tetramethylammonium hydroxide (B) (B) at least one quaternary ammonium hydroxide, and (C) at least one aromatic amine comprising at least one primary amino group.

Korean Patent No. 10-1333779 discloses a color resist stripper composition for TEFLYCIDY which comprises (a) an inorganic alkali hydroxide, an ammonium hydroxide, an alkylammonium hydroxide having an alkyl group having 1 to 4 carbon atoms, and 1 to 20% by weight of a hydroxide compound selected from the group consisting of phenylalkylammonium hydroxide having an alkyl group having 1 to 4 carbon atoms; (b) 1 to 70% by weight of a compound selected from the group consisting of alkylene glycol ethers having an alkyl group having 1 to 4 carbon atoms and alkylene glycols; (c) 0.5 to 10% by weight of hydroxylamine; (d) 0.5 to 50% by weight of an alkoxyalkylamine; And (e) residual water. &Lt; Desc / Clms Page number 2 &gt;

However, the prior arts have a problem that the removability of the color resist and the organic insulating film can not be sufficiently secured.

Korean Patent Publication No. 10-2012-0024714 (March 14, 2012, BASF) Korean Patent Publication No. 10-2012-0023068 (2012.12.12. BASF) Korean Registered Patent No. 10-1333779 (November 31, 2013, Dongjin Semichem Co., Ltd.)

An object of the present invention is to provide a resist stripper composition capable of improving resist removing ability by containing an amine compound represented by a specific formula.

To achieve the above object, the present invention provides a resist stripper composition comprising 1 to 15% by weight of a quaternary ammonium salt compound; 20 to 60% by weight of aprotic polar organic solvent; 0.01 to 1% by weight of an inorganic base or a salt thereof; 1 to 20% by weight of a compound represented by the following formula (1); And a water balance.

[Chemical Formula 1]

(Wherein the substituent represented by the formula (1) is as defined in the specification).

As described above, the resist stripping composition according to the present invention comprises a quaternary ammonium salt compound; Aprotic polar organic solvent; An inorganic base or a salt thereof; And the compound represented by the following formula (1) in a specific amount, it is possible to improve the resist removal force.

The resist stripper composition according to the present invention comprises 1 to 15% by weight of a quaternary ammonium salt compound; 20 to 60% by weight of aprotic polar organic solvent; 0.01 to 1% by weight of an inorganic base or a salt thereof; 1 to 20% by weight of a compound represented by the following formula (1); And water balance, which will be described later in more detail.

Quaternary ammonium salt compound

The quaternary ammonium salt compound penetrates into the polymer resist to decompose the cured polymer and accelerate the dissolution of the decomposed oligomers. At this time, the quaternary ammonium salt compound is composed of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH) and tetrabutylammonium hydroxide (TBAH) And the like.

The quaternary ammonium salt compound is preferably contained in an amount of 1 to 15% by weight based on the total weight% of the resist stripper composition. When the quaternary ammonium salt compound is contained in an amount of less than 1% by weight, The penetration ability is reduced, and when it is contained in an amount exceeding 15% by weight, the content of water is increased and the solubility to the polymer resin can be reduced.

Magnetostrictive  polarity Organic solvent

The aprotic polar organic solvent serves to penetrate and swell the cured polymer resist and dissolve the decomposed resist.

The aprotic polar organic solvent may be selected from the group consisting of dimethylsulfoxide, diethylsulfoxide, dipropylsulfoxide, sulfolane, N-ethylformamide, diethylformamide, dimethylpropionamide, n-methylpyrrolidone, 2- 1 &gt; is selected from the group consisting of pyrrolidone, n-butylpyrrolidone, laurylidone, n-ethylpyrrolidone, n-propylpyrrolidone, Or more species.

Preferably, the aprotic polar organic solvent is contained in an amount of 20 to 60% by weight based on the total weight% of the resist stripper composition. If the polar organic solvent is contained in an amount less than the above range, penetration resistance to the polymer resin is lowered, And problems such as clogging of the filter occur. If it exceeds the above range, the activity of the ammonium salt compound may be impaired and the removability may be deteriorated.

An inorganic base or Salt compound

The inorganic base or its salt may be selected from the group consisting of sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, sodium bicarbonate, potassium bicarbonate, sodium nitrate, potassium nitrate, sodium sulfate, potassium sulfate, sodium silicate, sodium silicate, sodium acetate, And may include at least one kind selected.

The inorganic base or salt thereof is preferably contained in an amount of 0.01 to 1% by weight based on the total weight% of the resist stripper composition. If the inorganic base or salt thereof is contained in the range below the range, the effect of increasing the peeling force to the organic insulating film is insignificant. If the inorganic base or its salt is included in the range exceeding the above range, in the process of forming the color filter on the array, It may cause corrosion to the film and cause an open failure of the metal wiring and may cause problems such as deterioration of the performance and clogging of the nozzle due to precipitation of the salt compound with use for a long period of time.

The compound represented by the formula (1)

The resist stripping composition of the present invention comprises a compound represented by the following formula (1).

[Chemical Formula 1]

In Formula 1, one of R ₁ to R ₃ is an alkylamine having 1 to 3 carbon atoms, and the remainder of R ₁ to R ₃ is hydrogen.

At this time, depending on the substituted R position of the imidazole compound represented by the formula (1), the peeling rate is affected and the degree of improvement of the peeling rate may be improved in the order that the alkylamine is substituted with R ₁ , R ₃ and R ₂ .

The compound represented by Formula 1 may be prepared by reacting 1- (1-hydrogen-imidazol-1-yl) -methanamine, 2- (1-hydrogen- -Imidazol-1-yl) -1-propanamine, 3- (l-Hydro-imidazol-4-yl) -1-propanamine. 2- (1-Hydro-imidazol-4-yl) -ethanamine.

The compound represented by the formula (1) is preferably contained in an amount of 1 to 20% by weight based on the total weight% of the resist stripper composition. If the amount of the compound represented by the formula (1) is less than the above range, the desired removal rate can not be attained due to insufficient penetration of the color resist and dissolution ability. If the amount exceeds the above range, There is a problem that the removal characteristic is insufficient and the economic effect can not be achieved.

water

The water can quickly and safely remove organic contaminants and resist stripping liquid remaining on the substrate during the rinsing process. At this time, it is preferable to use deionized water having a specific resistance value of 18 M? / Cm or more as water for semiconductor processing. The water may be contained as a residual amount relative to the total weight% of the resist stripper composition, but it is preferable that the water is contained in an amount of 1 to 40% by weight. If the amount of the water is less than 1% by weight, the removal rate of the resist may be lowered. If the amount of the water is more than 40% by weight, the peeling force may be lowered.

The resist stripping solution composition according to the present invention may further comprise an alkylene glycol alkyl ether compound or a corrosion inhibitor.

Alkylene glycol alkyl ether  compound

The alkylene glycol alkyl ether compound according to the present invention does not contain a hydroxyl group.

The alkylene glycol alkyl ether compound that does not contain a hydroxy group penetrates into the polymer chain to release the chain and permeates the interface between the lower film and the organic polymer so that the resist can be easily peeled and the function of dissolving the peeled resist .

The alkylene glycol alkyl ether compound containing no hydroxy group may be selected from the group consisting of ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, triethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol diethyl ether and di Ethylene glycol methyl ethyl ether, or a mixture thereof.

When the alkylene glycol alkyl ether does not contain a hydroxyl group, it is preferable since the alkylene glycol alkyl ether can penetrate between the hydrophobic cured organic film and the lower substrate faster than the case where the alkylene glycol alkyl ether contains a hydroxy group, Hydrogen bond with the organic / inorganic alkali salt may degrade the decomposition rate of the polymer, which is not preferable.

The alkylene glycol alkyl ether compound of the present invention is preferably contained in an amount of 1 to 20% by weight based on the total weight% of the resist stripper composition. If the alkylene glycol alkyl ether is contained in an amount of less than 1% by weight, the resist stripping rate can not be improved. If the alkylene glycol alkyl ether is contained in an amount of more than 20% by weight, the solubility of the salt compound in the resist stripping solution composition is lowered, have.

Corrosion inhibitor

The corrosion inhibitor is not particularly limited and may be selected from the group consisting of benzotriazole, tolythriazole, methyltolytriazole, 5-aminotetrazole, 2,2 '- [[[benzotriazole] methyl] imino] Methyl] imino] bis methanol, 2,2 '- [[[ethyl-1-hydrogen benzotriazol- 1 -yl] methyl] ] Imino] bis-ethanol, 2,2 '- [[[methyl-1-hydrogen-benzo Yl] methyl] imino] biscarboxylic acid, 2,2 '- [[[methyl-1-hydrogen-benzotriazol- [[[Amine-1-hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol; Quinone compounds including 1,2-benzoquinone, 1,4-benzoquinone, 1,4-naphthoquinone, and anthraquinone; Catechol; And alkyl gallates including pyrogallol, methyl gallate, propyl gallate, dodecyl galatate, octyl galatate, and gallic acid.

The corrosion inhibitor preferably comprises 0.1 wt% to 5 wt% with respect to the total weight percent of the resist stripper composition. If the corrosion inhibitor is contained in an amount less than 0.1% by weight, corrosion may occur in a metal wiring made of aluminum or an aluminum alloy and a copper or copper alloy in a peeling or deionized water rinsing process. If the corrosion inhibitor is contained in an amount exceeding 5% Secondary contamination and detachment of the peeling force may occur.

The resist stripping liquid composition according to the present invention comprises 1 to 15% by weight of a quaternary ammonium salt compound; 20 to 60% by weight of aprotic polar organic solvent; 0.01 to 1% by weight of an inorganic base or a salt thereof; 1 to 20% by weight of a compound represented by the following formula (1); And the remaining amount of water, it is possible to improve the resist removal force. In particular, it is more preferable that the amine compound represented by the general formula (1) is not contained together with the alkanolamine in order to improve the resist removal performance.

The resist stripper composition of the present invention can be prepared by mixing the above-mentioned compounds in a predetermined amount, and the mixing method is not particularly limited and various known methods can be applied.

The present invention also provides a method of peeling that can effectively remove the photoresist and residues remaining after hard baking, plasma etching, hot ashing, and cured photoresist after the ion implantation process.

The above peeling method can be performed by a method commonly known in the art, and good results can be obtained if the peeling solution and the substrate having the photoresist that is cured or modified with a polymer can contact the peeling solution.

As the peeling method according to the present invention, for example, a method using deposition, spraying, or deposition and spraying is applied. In the case of peeling by immersion, spraying, or immersion and spraying, the temperature for peeling is usually 10 to 100 캜, preferably 20 to 80 캜, and the immersion, spraying, or immersion and spraying time is usually 30 seconds to 40 minutes , Preferably 1 minute to 20 minutes, but the above conditions are not strictly applied in the present invention, and can be carried out under conditions that are easy and suitable for those skilled in the art.

More specifically, the present invention provides a photoresist stripping method comprising: forming a photoresist film on a substrate; Selectively exposing the photoresist film; Developing the exposed photoresist film to form a photoresist pattern; Completely curing the photoresist pattern by post-baking; Inspecting the defect of the fully cured photoresist pattern; The step of removing (peeling) the completely cured photoresist defect pattern by immersion, spraying, or immersion and spraying at a temperature of 10 to 100 ° C for 30 seconds to 40 minutes using the resist stripper composition of the present invention .

Hereinafter, the present invention will be described in more detail by way of examples. However, the following examples are intended to further illustrate the present invention, and the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention. In the following, "%" and "part" representing the content are by weight unless otherwise specified.

Example  1 to 12 and Comparative Example  1 to 6

Resist stripper compositions of Examples 1 to 12 and Comparative Examples 1 to 6 containing the components shown in Tables 1 and 2 were prepared.

Quaternary ammonium salt compound Polar solvent Compound (1) An inorganic base or Alkylene glycol alkyl ether compound Corrosion inhibitor water His salt Kinds weight% Kinds weight% Kinds weight% Kinds weight% Kinds weight% Kinds weight% weight% Example 1 TMAH 7.0 DMSO 56.55 A1 15 Potassium hydroxide 0.45 - - - - Balance Example 2 TMAH 8.8 DMSO 44.9 A1 15 Potassium hydroxide 0.09 MEDG 5 - - Balance Example 3 TMAH 11.3 DMSO 33.8 A1 10 Potassium carbonate 0.2 DMDG 10 BTA 0.5 Balance Example 4 TMAH 11.3 DMSO 33.8 A2 10 Potassium carbonate 0.2 DMDG 10 BTA 0.5 Balance Example 5 TMAH 11.3 DMSO 33.8 A3 10 Potassium carbonate 0.2 DMDG 10 BTA 0.5 Balance Example 6 TEAH 14.0 DEF / DMSO 10 / 39.5 A1 15 Potassium nitrate 0.5 DMTG 8 BTA 1.5 Balance Example 7 TMAH 7.5 NEP / DMSO 10 / 34.8 A1 8 Potassium nitrate 0.2 DMDG 15 TTA One Balance Example 8 TMAH 10.0 Sulfolane 37.8 A1 15 Potassium hydroxide 0.2 DMTG 5 BTA One Balance Example 9 TMAH 11.3 DMSO 31.9 A2 17 Potassium hydroxide 0.09 DMTG 5 TTA One Balance Example 10 TMAH 12.5 DMSO 27.9 A1 5 Potassium acetate 0.1 DMDG 15 BTA One Balance Example 11 TMAH 5.0 DMSO 52.2 A1 5 Potassium nitrate 0.8 DMDG 15 ATZ 2 Balance Example 12 TBAH / TMAH 4.4 / 10 DMSO 24.9 A1 15 Sodium hydroxide 0.1 DMDG 10 TTA 2 Balance Comparative Example 1 TMAH 11.3 DMSO 54.5 - - Potassium hydroxide 0.45 - - - - Balance Comparative Example 2 TMAH 12.5 DMSO 14.8 A1 35 Potassium nitrate 0.2 - - - - Balance Comparative Example 3 TMAH 11.3 DMSO 24.8 MEA 15 Potassium nitrate 0.2 DMDG 15 - - Balance Comparative Example 4 TMAH 0.5 DMSO 77.5 A1 10 Potassium acetate 0.5 DMDG 10 - - Balance Comparative Example 5 TMAH 12.5 DMSO 44.0 A1 0.5 Potassium hydroxide 0.2 MEDG 5 - - Balance Comparative Example 6 TMAH 12.5 DMSO 15 A1 30 Potassium hydroxide 0.2 MEDG 5 - - Balance TMAH: tetramethylammonium hydroxide
TEAH: tetraethylammonium hydroxide
TBAH: tetrabutylammonium hydroxide
DMSO: dimethylsulfoxide
DEF: diethylformamide
NEP: N-ethylpyrrolidone
A1: 3- (1-Hydro-imidazol-1-yl) -1-propanamine
A2: 3- (1-Hydro-imidazol-4-yl) -1-propanamine
A3: 2- (1-Hydro-imidazol-4-yl) -ethanamine
MEDG: Diethylene glycol methyl ethyl ether
DMDG: Diethylene glycol dimethyl ether
DMTG: triethylene glycol dimethyl ether
BTA: 1,2,3-benzotriazole
ATZ: 5-Aminotetrazole
TTA: methyl-1-hydrogen-benzotriazole

Experimental Example : Resist  Removal evaluation

The removal of the resist was performed using a color filter substrate having a transparent material for forming CS and red, green and blue (hereinafter referred to as WRGB) applied to each pixel. The color resist was prepared by prebaking at 90 ° C for 120 seconds after exposure, developing after exposure, and then hard baking the substrate having the pattern formed in the oven at 220 ° C in an oven.

An overcoat layer is applied to the upper portion of the color filter substrate on which the color resist pattern is formed to remove stepped portions between the materials. The organic film layer may be formed through photo-curing, but the present invention is not limited thereto.

In order to confirm the removability of the color resist including the organic film and the transparent material on the color filter pattern substrate, the resist was immersed in a solution at 75 캜 for 5 minutes, 10 minutes and 15 minutes, and the presence or absence of the resist was confirmed by an optical microscope. The results are shown in Table 2 below.

<Evaluation Criteria>

◎: 100% resist removal

○: Resist 80% or more removed

?: Less than 80% resist removal

X: No resist removal

WRGB substrate Upper organic film Rework time 5 minutes 10 minutes 15 minutes 3 minutes 5 minutes Example 1 △ ○ ◎ ○ ◎ Example 2 △ ○ ◎ ○ ◎ Example 3 ○ ◎ ◎ ◎ ◎ Example 4 △ ○ ◎ ○ ◎ Example 5 ○ ◎ ◎ ◎ ◎ Example 6 ○ ◎ ◎ ◎ ◎ Example 7 ○ ◎ ◎ ◎ ◎ Example 8 ○ ◎ ◎ ◎ ◎ Example 9 ○ ◎ ◎ ◎ ◎ Example 10 △ ○ ◎ ○ ◎ Example 11 △ ○ ◎ ○ ◎ Example 12 ○ ◎ ◎ ◎ ◎ Comparative Example 1 X X △ ○ ◎ Comparative Example 2 X X △ X ○ Comparative Example 3 X X X △ ○ Comparative Example 4 X X X ○ ◎ Comparative Example 5 X △ ○ ○ ◎ Comparative Example 6 X X X X ○

Referring to Table 2, it can be seen that Examples 1 to 12 prepared according to the present invention have excellent resist removing power. On the other hand, in Comparative Examples 1 to 6, it is found that the resist removal force is less than 80% or not removed.

Claims (7)

1 to 15% by weight of a quaternary ammonium salt compound;
20 to 60% by weight of aprotic polar organic solvent;
0.01 to 1% by weight of an inorganic base or a salt thereof;
1 to 20% by weight of a compound represented by the following formula (1); And
And a residual amount of water.
[Chemical Formula 1]

(Wherein one of R ₁ to R ₃ in the general formula (1) is an alkylamine having 1 to 3 carbon atoms, and the remainder of R ₁ to R ₃ is hydrogen). The method according to claim 1,
The quaternary ammonium salt compound
At least one selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH) and tetrabutylammonium hydroxide (TBAH) The resist stripping liquid composition comprising: The method according to claim 1,
The aprotic polar organic solvent includes
Dimethyl sulfoxide, dimethyl sulfoxide, diethyl sulfoxide, dipropyl sulfoxide, sulfolane, N-ethyl formamide, diethyl formamide, dimethyl propionamide, n-methyl pyrrolidone, And at least one selected from the group consisting of norbornane, norbornane, norbornane, norbornane, norbornane, norbornane, The resist stripping liquid composition comprising: The method according to claim 1,
The inorganic base or its salt
At least one selected from the group consisting of sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, sodium bicarbonate, potassium bicarbonate, sodium nitrate, potassium nitrate, sodium sulfate, potassium sulfate, sodium silicate, potassium silicate, sodium acetate, The resist stripping liquid composition comprising: The method according to claim 1,
The resist stripping solution composition
An alkylene glycol alkyl ether compound not containing a hydroxy group, or a corrosion inhibitor. 6. The method of claim 5,
The alkylene glycol alkyl ether compound
Wherein the resist stripping solution composition comprises 1 to 20% by weight based on the total weight% of the resist stripping solution composition. 6. The method of claim 5,
The corrosion inhibitor
Wherein the resist stripping solution composition contains 0.1 to 5% by weight based on the total weight% of the resist stripping solution composition.