KR20020067296A - Photoresist remover composition - Google Patents

Abstract

PURPOSE: A photoresist remover composition is provided, to remove the cured photoresist layer due to hard bake, dry etching, ion injection and the deteriorated photoresist layer due to the metallic by-product etched from the under metal layer in short time and to minimize the corrosion of under metal wiring during the photoresist removing procedure. CONSTITUTION: The photoresist remover composition comprises 10-18 wt% of water-soluble hydroxylamine; 0.01-5 wt% of an oxime compound; 10-45 wt% of water; 4-13 wt% of an organic phenol-based compound having 2-3 hydroxy groups; 24-48 wt% of a water-soluble organic solvent; 0.05-5 wt% of a triazole-based compound; and 0.1-1 wt% of an alkylphenol ethoxylate surfactant. Preferably the oxime compound is at least one selected from butanoneoxime and propanoneoxime. The water-soluble organic solvent is at least one selected from the group consisting of dimethylsulfoxide, N-methylpyrrolidone, dimethylacetamide and dimethyl formamide. The organic phenol-based compound is represented by the formula 1, wherein m is 2 or 3. The triazole-based compound is at least one selected from the group consisting of benzotriazole, tolytriazole, carboxylic benzotriazole and a mixture of benzotriazole and tolytriazole. The alkylphenol ethoxylate surfactant is represented by the formula 2, wherein R and R' are H or an alkyl group; and n is an integer of 2-12.

Description

Photoresist remover composition {PHOTORESIST REMOVER COMPOSITION}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoresist remover composition, and more particularly, to a photoresist for removing resist during a process of manufacturing a semiconductor device such as an integrated circuit (IC), a high integrated circuit (LSI), an ultra high integrated circuit (VLSI), and the like. It relates to a remover composition.

In general, a manufacturing process of a semiconductor device is performed by forming a resist pattern on a conductive layer formed on a semiconductor substrate, and then removing the conductive layer pattern by etching by removing the conductive layer in a region not covered by the pattern using the pattern as a mask. The forming process is used dozens of times. The resist pattern used as the mask should be removed on the conductive layer by a resist remover in the cleaning step after the conductive layer pattern forming step. However, in the recent ultra-high integrated circuit semiconductor manufacturing process, since the etching process for forming the conductive layer pattern mainly consists of the dry etching process, it is difficult to remove the resist in the subsequent cleaning process.

The dry etching process is an alternative to the wet etching process using acidic liquid chemicals, and the etching process is performed using a gas phase-solid reaction between a plasma etching gas and a material film such as a conductive layer. The dry etching process is easy to control and obtains a sharp pattern, thus becoming the mainstream of the etching process. However, in the dry etching method, the removal of the resist becomes difficult because ions and radicals in the plasma etching gas on the surface of the resist film cause a complex chemical reaction with the resist film during the process of etching the conductive layer. In particular, it is difficult to remove the alteration hardening resist that occurs in the dry etching of the conductive layer such as tungsten and titanium nitride even when various chemicals are used in the cleaning process.

Recently, a resist remover composition composed of hydroxylamine and aminoethoxyethanol has been widely used because of its relatively effective removal performance for most cured resist films. However, the remover composition has a serious corrosion on the copper wiring metal layer, which is newly applied instead of aluminum wiring in a semiconductor mass production line of 1G DRAM or more, and thus, it is desired to develop a new resist remover that can compensate for this.

On the other hand, a resist remover composition composed of alkanol amines and diethylene glycol monoalkyl ethers, which have been recently proposed, have also been widely used because of their low odor and toxicity and effective removal performance for most resist films. However, it has been found that the remover composition also does not satisfactorily remove the resist film exposed to the plasma etching gas or the ion beam in the dry etching process or the ion implantation process, thereby removing the resist film modified by the dry etching and ion implantation process. Development of a new resist remover was desired.

As described above, it is difficult to remove the resist film that has undergone the ion implantation process with a resist remover. In particular, in the manufacture of ultra-high integrated circuits, a resist having undergone a high dose amount of ion implantation to form a source / drain region It is more difficult to remove the membrane. In the ion implantation process, the resist film is hardened by the high dose amount and the heat of reaction by the high energy ion beam, which hardens the surface of the resist. At the same time, as the ashing progresses, as the internal pressure inside the resist film increases, a puff phenomenon of the resist, which causes the surface of the resist film to rupture due to the remaining solvent, may occur, resulting in a resist residue. Usually, a semiconductor wafer subjected to an ashing treatment is heated at a high temperature of 200 ° C or higher. At this time, the solvent remaining in the resist must be vaporized and discharged, but since the hardened layer exists on the surface of the resist after the high dose amount of ion implantation process, this becomes impossible.

The surface hardened layer scattered by this puffing phenomenon becomes a residue and is difficult to remove. In addition, since the cured layer on the surface of the resist is formed by heat, a dopant, which is an impurity ion, is substituted in the resist molecular structure to cause a crosslinking reaction, which is oxidized by O ₂ plasma. The oxidized resist thus turns into residues and particles, which are also contaminants and cause a decrease in production yield in the manufacture of ultra-high integrated circuits.

Various dry and wet processes have been proposed to effectively remove the above-mentioned resist hardened layer, and one of them is a two-stage ashing method in which ordinary ashing and secondary ashing are performed [Fujimura, Japan Institute of Spring Application] Vol. 1P-13, p574, 1989. However, these dry etching processes have a disadvantage in that the production yield is reduced due to the complexity of the process and the scale of the equipment.

On the other hand, as a resist remover used in the conventional wet cleaning process, the resist remover composition which mixes an organic amine compound and various organic solvents was proposed. In particular, resist remover compositions containing monoethanolamine (MEA) as an essential component among organic amine compounds are widely used.

For example, a) organic amine compounds such as MEA and 2- (2-aminoethoxy) ethanol (AEE), b) N, N-dimethylacetamide (DMAc), N, N-dimethylformamide (DMF) , A two-component resist remover composition composed of a polar solvent such as N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), carbitol acetate, and methoxyacetoxypropane (US Pat. Nos. 4, 617, 251); a) organic amine compounds such as MEA, monopropanolamine, methylamethanethanol, b) N-methylacetamide (MAc), N, N-dimethylacetamide (DMAc), dimethylformamide (DMF), N, N- Amide solvents such as diethylacetamide (DEAc), N, N-dipropylacetamide (DPAc), N, N-dimethylpropionamide, N, N-diethylbutylamide, N-methyl-N-ethylpropionamide A two-component resist remover composition consisting of US Pat. No. 4,770,713; a) organic amine compounds such as alkanolamine (MEA), b) aprotic polar solvents such as 1,3-dimethyl-2-imidazolidinone (DMI) and 1,3-dimethyl-tetrahydropyrimidinone Two-component resist remover composition consisting of a type (Germany Patent Application No. 3,828,513); a) alkanolamines such as MEA, diethanolamine (DEA) and triethanolamine (TEA) and alkylene polyamines having ethylene oxide of ethylenediamine introduced; b) sulfone compounds such as sulfolane, c) diethylene glycol monoethyl A resist remover composition (Japanese Patent Application Laid-Open No. 62-49355) in which glycol monoalkyl ethers such as ether and diethylene glycol monobutyl ether are mixed at a specific ratio; a) water-soluble amines such as MEA and DEA, b) a resist remover composition containing 1,3-dimethyl-2-imidazolidinone (Japanese Patent Application Laid-Open No. 63-208043); a) a positive resist remover composition comprising a) amines such as MEA, ethylenediamine, piperidine, benzylamine, b) polar solvents such as DMAc, NMP, DMSO, and c) surfactants (Japanese Patent Application Publication No. 63-231343). ); a) a nitrogen-containing organic hydroxy compound such as MEA, b) diethylene glycol monoethyl ether, diethylene glycol dialkyl ether, γ-butylolactone and 1,3-dimethyl-2-imidazolinone At least one solvent, and c) a positive resist remover composition (DM Patent Application No. 64-42653) in which DMSO is mixed in a specific ratio; a) a positive resist remover composition comprising a) an organic amine compound such as MEA, b) aprotic polar solvents such as diethylene glycol monoalkyl ether, DMAc, NMP, DMSO, and c) a phosphate ester-based surfactant (Japanese Patent) Application Publication No. 4-124668); A resist remover composition containing a water-soluble organic amine compound such as a) 1,3-dimethyl-2-imidazolinone (DMI), b) dimethyl sulfoxide (DMSO), and c) MEA (Japanese Patent Application Laid-Open No. 4- 350660); a) MEA, b) DMSO, c) resist remover composition containing catechol (Japanese Patent Application Laid-open No. Hei 5-281753) and the like have been proposed, and these resist remover compositions have safety, workability, and resist removal performance. Shows relatively good characteristics.

However, in recent semiconductor device manufacturing processes, resists are often baked at high temperatures as the processing conditions become harsh, such as processing various substrates including silicon wafers at a high temperature of 110 to 140 ° C. However, the resist remover in the above examples does not have sufficient removal capability for resist baked at high temperature. As a composition for removing the resist baked at high temperature, a resist remover composition containing water or a hydroxylamine compound has been proposed. For example, the resist remover composition (Japanese Patent Application Laid-open No. 4-289866) which consists of a) hydroxylamines, b) alkanolamines, and c) water; a resist remover composition composed of a) hydroxylamines, b) alkanolamines, c) water, and d) an anticorrosive agent (Japanese Patent Application Laid-Open No. 6-266119); a resist remover composition containing a) polar solvents such as GBL, DMF, DMAc, NMP, b) amino alcohols such as 2-methylaminoethanol, and c) water (Japanese Patent Application Laid-Open No. 7-69618); a) amino alcohols such as MEA, b) water, and c) butyl diglycol remover composition (Japanese Patent Application Laid-Open No. 8-123043); A resist remover composition containing a) alkanolamines, alkoxyalkylamines, b) glycol monoalkyl ethers, c) sugar alcohols, d) quaternary ammonium hydroxides, and e) water (Japanese Patent Application Laid-Open No. 8-262746). ; Remover composition containing a) at least one alkanolamine in MEA or AEE, b) hydroxylamine, c) diethylene glycol monoalkyl ether, d) sugars (sorbitol), e) water (Japanese Patent Application Laid-Open No. 9). -152721); a resist remover composition consisting of a) hydroxylamines, b) water, c) amines having an acid dissociation constant (pKa) of 7.5 to 13, d) a water-soluble organic solvent, and e) an anticorrosive agent (Japanese Patent Application Laid-Open No. 9-96911). This has been proposed.

However, such a resist remover composition is also removed from the resist film cured by the dry etching, ashing and ion implantation processes, and the removal performance of the resist film deteriorated by the metallic by-products etched from the metal film below. There was not enough problem in terms of corrosion protection performance of metal wiring.

Accordingly, the present invention has been made to solve the problems of the prior art, and the present invention relates to a resist film hardened by a dry etching, ashing and ion implantation process, and a metallic by-product etched from the metal film at the bottom of the process. It is an object of the present invention to provide a photoresist remover composition which can easily remove a deteriorated resist film within a short time and can minimize corrosion of a lower metal wiring, particularly a copper wiring.

Figure 1 shows the state before applying the photoresist remover composition by scanning electron micrograph.

FIG. 2 is a scanning electron micrograph showing the results of a resist removal performance test at 65 ° C. using the photoresist remover composition of Example 1. FIG.

Figure 3 is a scanning electron micrograph showing the result of the resist removal performance test at 65 ℃ using the resist remover composition of Comparative Example 1.

The present invention to achieve the above object,

(A) 10-18% by weight of water-soluble hydroxylamine, (b) 0.01-5% by weight of oxime compounds, (c) 10-45% by weight of water, (d) organic phenol compounds containing two or three hydroxyl groups Photo-containing 4 to 13% by weight, (ㅁ) water-soluble organic solvent 24 to 48% by weight, (iii) 0.5 to 5% by weight of triazole compound, and (g) 0.1 to 1% by weight of alkylphenol ethoxylate surfactant It provides a resist remover composition.

Hereinafter, the present invention will be described in detail.

The present invention relates to a photoresist remover composition comprising a compound such as a hydroxylamine, an oxime compound, an alkylphenol ethoxylate surfactant, and the like. The photoresist remover composition of the present invention can easily resist a resist film modified by a hard bake, dry etching, ashing or ion implantation process, and a resist film deteriorated by metallic by-products etched from the lower metal film during the process. In addition, it is possible to minimize the corrosion of the underlying metal wiring during the resist removal process.

In the photoresist remover composition of the present invention, the content of the hydroxyl amine is preferably used in an amount of 10 to 18% by weight (in the case of a commercially available hydroxyl amine, it is sold in a 50% by weight aqueous solution). In this case, when the content of the hydroxyl amine is less than 10% by weight, it is difficult to completely remove the altered sidewall resist polymer by dry etching, ashing, or the like. There is a problem of excessive corrosion to the metal film.

In the photoresist remover composition of the present invention, the oxime compound is preferably selected from the group consisting of butanone oxime and propanone oxime. The use amount is 0.01 to 5% by weight, and the oxime content is less than 0.01% by weight, the solubility of the stripped sidewall photoresist polymer is lowered, and when it exceeds 5% by weight due to the high boiling point characteristics of the oxime There is a problem that a decrease in photoresist dissolution performance occurs at low temperatures.

In the photoresist remover composition of the present invention, it is preferable to use pure water filtered through an ion exchange resin, and more preferably, ultrapure water having a specific resistance of 18 kPa or more. It is preferable to use the water content of 10 to 45% by weight, and if the water content is less than 10% by weight, there is a problem in that the ability to remove the resist that is severely deteriorated by the metal by-products generated after the dry etching and ashing process is deteriorated. In addition, if the content exceeds 45% by weight, the lower metal wiring may be corroded during the removal process, and the content of hydroxylamine and water-soluble organic solvents is relatively reduced, so that most of the resists that are not modified except for the modified resist in the composition of the resist film The ability to remove it can be degraded.

In addition, in the photoresist remover composition of the present invention, a compound represented by the following formula (1) is used for the organic phenol compound containing two or three hydroxyl groups.

Here m represents an integer of 2 or 3.

In the photoresist remover composition of the present invention, the organic phenolic compound containing two or three hydroxyl groups is contained in the resist film cured by the dry etching, ashing and ion implantation process and the metallic by-products etched from the metal film of the lower portion. As a component for removing the resist film modified by the above, it functions to effectively penetrate the hydroxide ions generated by the reaction of hydroxylamine and water ions to the contact surface between the resist film and the semiconductor substrate. In addition, the organic phenol compound containing two or three hydroxyl groups exhibits an anticorrosion effect of preventing the hydroxyl groups generated from the photoresist remover composition from corroding the lower metal film, which is a conductive layer.

As for content of the organic phenol type compound containing 2 or 3 said hydroxyl groups, 4 to 13 weight% is preferable. When the content of the organic phenolic compound is less than 4% by weight, the ability to remove the resist film which is severely modified by the metal by-products generated after the dry etching and ion implantation process is lowered, and the corrosion of the lower metal film is intensified. When it exceeds%, it is uneconomical from an industrial standpoint in consideration of the production cost of the composition compared to the resist film removal performance.

In the photoresist remover composition of the present invention, the water-soluble organic solvent is a group consisting of dimethyl sulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc), and dimethylformamide (DMF). Preference is given to using at least one organic solvent selected from among which dimethylsulfoxide (DMSO) or dimethylacetamide (DMAc) has excellent dissolution properties to the resist, prevention of resist redeposition, and rapid biodegradation rate. More preferred in terms of ease of waste liquid treatment. The content of the water-soluble organic solvent is preferably used at 24 to 48% by weight.

In addition, in the present invention, the organic phenol-based compound containing two or three hydroxyl groups alone may impart a distinct corrosion protection effect to the photoresist remover composition of the present invention. Erosion, or fitting, cannot be completely solved. Therefore, in order to solve this problem, the present inventors have found that the use of a triazole compound in an organic phenol compound containing two or three hydroxyl groups can prevent the fitting phenomenon.

In the photoresist remover composition of the present invention, the triazole-based compound is benzotriazole (BT), tolytriazole (TT), carboxylic benzotriazole (CBT) and benzotriazole (BT) and tolytria One or more compounds selected from the group consisting of two-component triazole compounds in which sol (TT) is mixed are used, of which benzotriazole (BT) or benzotriazole (BT) and tolytriazole (TT) are mixed. It is preferable to use the prepared two-component triazole compound. In particular, in order to prevent side fitting occurring on the sidewall of the resist film, a two-component triazole compound in which benzotriazole (BT) and tolytriazole (TT) are mixed is preferably mixed with an aromatic phenol compound containing a hydroxyl group. The synergistic effect can be obtained when the mixture is added in a ratio of 1: 1. The triazole-based compound is used in an amount of 0.5 to 5% by weight, and the amount of the triazole-based compound is less than 0.5% by weight, and the ability to prevent fitting phenomenon is insignificant. There is a problem of deterioration.

In addition, in the photoresist remover composition of the present invention, the alkylphenol ethoxylate surfactant is a compound represented by the following formula (2).

Here, R and R 'each represent hydrogen or an alkyl group, and n represents the integer of 2-12.

The alkylphenol ethoxylate surfactant serves to disperse the resist dissolved by the photoresist remover composition, thereby reducing the possibility of repositioning on the metal film. Specific examples of the alkylphenol ethoxylate surfactant include nonylphenol ethoxylate, octylphenol ethoxylate, dinonylphenol ethoxylate, and the like, and preferably nonylphenol ethoxylate or octylphenol ethoxylate. Use It is preferable that the content of the alkylphenol ethoxylate surfactant is 0.1 to 1% by weight, and if the amount is less than 0.1% by weight, a problem arises that the resist is reattached. Cause problems.

As described above, the photoresist remover composition according to the present invention can easily remove the resist film generated during the semiconductor device manufacturing process within a short time, and in particular, to remove the deteriorated resist film resulting from the film quality with tungsten and titanium nitride. useful. In addition, it is possible to minimize the corrosion of the lower metal wiring during the resist removal process, in particular to minimize the corrosion of the copper wiring applied to the ultra-high integrated circuit semiconductor mass production line of more than 1G DRAM class.

Hereinafter, the present invention will be described in more detail with reference to Examples, but the scope of the present invention is not limited by the following Examples.

In the following Examples and Comparative Examples, unless otherwise stated, percentages and mixing ratios are based on weight.

[Examples 1-5 and Comparative Examples 1-2]

The photoresist remover compositions of Examples 1 to 5 and Comparative Example 1 were prepared by mixing the components of (a) to (s) in the compositions and contents shown in Table 1 below.

Classification (% by weight) Example Comparative example One 2 3 4 5 One 2 Hydroxylamine 10 15 12 15 18 30 35 Oxime compounds Butanone Oxime 4 - 0.5 1.5 - - - Propanone oxime - 5 - - 0.5 - - Monoethanolamine - - - - - 5 10 water 25 30 45 35 25 30 20 Organophenol compounds Catechol 12 - 13 - 9 - - Resorcin - 5 - 10 - - - Cresol - - - - - 9 14.5 Water Soluble Organic Solvent DMSO ¹⁾ 48 41 - - - - - DMAc ²⁾ - - 24 35 - - - NMP ³⁾ - - - - 45 - 20 DMF ⁴⁾ - - - - - 25 - Triazole compound BT ⁵⁾ 0.5 3.0 5.0 - - Cobratec928 ⁶⁾ - - - 2.5 - - - CBT ⁷⁾ - - - 2.0 - - Surfactants CO850 ⁸⁾ 0.5 - 0.5 1.0 - - - CA630 ⁹⁾ - 1.0 - - 0.5 - - PEG - - - - - One 0.5 1) DMSO: Dimethyl sulfoxide 2) DMAc: Dimethyl acetamide 3) NMP: N-methylpyrrolidone 4) DMF: Dimethyl formamide 5) BT: Benzotriazole (PMC, trade name; COBRATEC 99) 6 CBT: Carboxybenzotriazole (PMC, trade name; COBRATEC CBT) 7) Cobratec 928: Triazole compound mixed with benzotriazole and tolytriazole (product of PMC) 8) Nonylphenol ethoxylate: GAP ( 9) Octylphenol ethoxylate: product of GAF Co., Ltd.

Experimental Example

Each of the photoresist remover compositions prepared in Examples 1 to 5 and Comparative Examples 1 and 2 was subjected to (1) resist removal test and (2) copper corrosiveness test in the following manner, and the results were shown below. It is shown to Tables 2-3.

(1) resist removal test

Preparation of Specimen A

The final film thickness is obtained by spin-coating a positive resist composition (trade name: IS401, manufactured by Mitsubishi), which is commonly used on the surface of an 8-inch silicon wafer in which tungsten and titanium nitride films are sequentially deposited from 1000 to 700 차례로 from below. It applied so that it might become 1.01 micrometer. Subsequently, the resist film was pre-baked at 100 ° C. for 90 seconds on a hot plate. Subsequently, after placing a mask having a predetermined pattern on the resist film, ultraviolet rays were irradiated and developed for 60 seconds at 21 ° C. with a 2.38% tetramethylammonium hydroxide (TMAH) developer, and then a specimen having the resist pattern formed thereon was hot plated. Hard bake was carried out at 120 ° C. for 100 seconds. Using a resist pattern formed on the specimen as a mask, a dry etching apparatus (Hitachi Corp., model name: M318) using an SF ₆ / Cl ₂ mixed gas as an etching gas, the lower tungsten and titanium not covered by the resist pattern for 35 seconds The nitride film was etched to form a metal wiring pattern.

Resist removal test

Specimen A was immersed in a temperature 65 ° C. resist remover composition. Subsequently, the specimens were removed from the resist remover composition, washed with ultrapure water and dried with nitrogen gas, and then examined by scanning electron microscopy (SEM) to determine whether or not resist residues adhered to the periphery of the pattern and the line pattern surface. The resist removal performance was evaluated based on the following criteria and the results are shown in Table 2 below.

(Circle): When the resist residue is completely removed in the line pattern side wall and surface.

(Triangle | delta): When resist residue is removed 80% or more in the line pattern side wall and surface, but a trace remains.

X: When most of the resist residue was not removed in the line pattern sidewalls and the surface.

(2) copper corrosion test

Preparation of Psalm B

A lead frame made of copper used during the semiconductor package process was prepared.

Copper corrosive test

Specimen B was immersed in a temperature 65 ° C. resist remover composition. Subsequently, the specimen was removed from the resist remover composition, washed with ultrapure water, dried with nitrogen gas, and then inspected on the surface of the copper specimen by scanning electron microscopy to evaluate the degree of corrosion based on the criteria as follows. Table 3 shows.

○: no corrosion on copper surface

△: when there is some corrosion on the copper surface

X: When corrosion appeared badly on the copper surface as a whole

Resist removal performance of resist remover composition division Immersion time (min) 5 10 20 Example One ○ ○ ○ 2 ○ ○ ○ 3 △ ○ ○ 4 △ ○ ○ 5 ○ ○ ○ Comparative example One × × × 2 × △ △

In Table 2, all of Examples 1 to 5 exhibited excellent resist removal performance, whereas Comparative Examples 1 and 2 of the prior art had poor resist removal performance.

Metal wiring corrosion test division Immersion time (min) 5 10 20 Example One ○ ○ ○ 2 ○ ○ ○ 3 ○ ○ △ 4 ○ ○ △ 5 ○ ○ ○ Comparative example One ○ △ × 2 ○ △ ×

In addition, in Table 3, the metal wiring corrosion test was excellent in Examples 1 to 5, and Comparative Examples 1 and 2 were excellent in the early stages, but more corrosion occurred over time.

1 to 2 is a comparison of the resist removal performance before and after applying the photoresist remover composition of Example 1 of the present invention, and Figure 3 is a scanning electron microscope for the resist removal performance of the resist remover composition of Comparative Example 1 (Hitachisa, model name; S-4100). At this time, the specimen A was tested at a temperature of 65 ° C. for the photoresist remover composition.

1, it can be seen that the resist is attached to the sidewall before the photoresist is applied.

Figure 2 shows that by using the photoresist remover composition of Example 1, all of the resist was removed well.

3, the resist was still left on the sidewalls using the resist remover composition of the conventional Comparative Example 1. FIG.

As described above, the photoresist remover composition according to the present invention shortens the resist film modified by the resist film cured by the dry etching, ashing and ion implantation process and the metal by-products etched from the metal film of the lower part during the process. Not only can it be easily removed in time, but the corrosion of the lower metal wiring during the resist removal process can be minimized, and the subsequent rinse process can be rinsed with water alone without the need for using organic solvents such as isopropyl alcohol and dimethyl sulfoxide. can do.

Claims (6)

(A) 10-18% by weight of water-soluble hydroxylamine, (b) 0.01-5% by weight of oxime compounds, (c) 10-45% by weight of water, (d) organic phenolic compounds containing two or three hydroxyl groups 4 to 13 wt%, (wh) 24 to 48 wt% of water-soluble organic solvent, 0.5 to 5 wt% of (iii) triazole compound, and (g) 0.1 to 1 wt% of alkylphenol ethoxylate surfactant A photoresist remover composition. The method of claim 1, The oxime compound is at least one selected from the group consisting of butanone oxime and propanone oxime. The method of claim 1, The water-soluble organic solvent is at least one selected from the group consisting of dimethyl sulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc), and dimethylformamide (DMF) Resist remover composition. The method of claim 1, The organic phenol-based compound containing two or three hydroxyl groups is a phenol-based compound represented by the formula (1): [Formula 1] Here, m represents the integer of 2 or 3. The method of claim 1, The triazole-based compound is a benzotriazole (BT), tolitriazole (TT), carboxylic benzotriazole (CBT), benzotriazole and a triazole-based compound consisting of tolitriazole mixed in one kind Photoresist remover composition, characterized in that selected above. The method of claim 1, The alkylphenol ethoxylate surfactant is a photoresist remover composition, characterized in that the compound represented by the following formula (2). [Formula 2] Here, R and R 'each represent hydrogen or an alkyl group, and n represents the integer of 2-12.