JP4370442B2 - Hdd用低アウトガス防錆溶剤組成物 - Google Patents

Hdd用低アウトガス防錆溶剤組成物 Download PDF

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JP4370442B2
JP4370442B2 JP32307899A JP32307899A JP4370442B2 JP 4370442 B2 JP4370442 B2 JP 4370442B2 JP 32307899 A JP32307899 A JP 32307899A JP 32307899 A JP32307899 A JP 32307899A JP 4370442 B2 JP4370442 B2 JP 4370442B2
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Prior art keywords
rust preventive
rust
composition
bearing
storage device
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JP2001107046A (ja
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元治 秋山
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Minebea Co Ltd
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Minebea Co Ltd
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Priority to JP32307899A priority Critical patent/JP4370442B2/ja
Priority to US09/537,990 priority patent/US6423126B1/en
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B33/00Constructional parts, details or accessories not provided for in the other groups of this subclass
    • G11B33/14Reducing influence of physical parameters, e.g. temperature change, moisture, dust
    • G11B33/1446Reducing contamination, e.g. by dust, debris
    • G11B33/1453Reducing contamination, e.g. by dust, debris by moisture
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    • C23F11/00Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • GPHYSICS
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    • G11B19/00Driving, starting, stopping record carriers not specifically of filamentary or web form, or of supports therefor; Control thereof; Control of operating function ; Driving both disc and head
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Description

【0001】
【発明が属する技術分野】
本発明は、記憶装置用軸受防錆組成物を含有している記憶装置用軸受防錆溶剤組成物、当該記憶装置用軸受防錆溶剤組成物で表面処理した軸受部品若しくは軸受、及び当該記憶装置用軸受防錆溶剤組成物で表面処理した軸受部品若しくは軸受が組み込まれたスピンドルモータ、ハードディスク(HDD)装置等に関する。
【0002】
【従来技術】
近年、磁気記憶装置としてのハードディスク(HDD)装置、フロッピーディスク(FDD)装置あるいは光ディスク装置において、小型・高速・大容量化への変革には著しいものがある。これら変革ニーズに対応する為に、HDD、FDDあるいは光ディスクに使用されるスピンドルモータは益々高速回転化され、ディスクへの記憶密度も益々高密度化がすすんでいる。このため、磁気ヘッドクラッシュや記憶エラーの原因につながるアウトガスを極力押さえ込まなければならないという課題が出てきた。記憶密度の高密度化には、このアウトガスの発生を防止することが、解決しなければならない課題のひとつである。
【0003】
【発明が解決しようとする課題】
このアウトガス発生の要因は、使用される接着剤や付着する汚れ等にもあるが、中でもモータに組み込まれているベアリングが封入されているグリースやグリース中の防錆剤等からのアウトガスが無視できないほど大きいものであることが判って来た。本発明は、ベアリングの構成部分である内輪・外輪・ボール等の金属防錆のために使用される防錆剤のアウトガス低減化改善を行ったもので、低アウトガス特性を有する記憶装置用軸受防錆組成物を含有している防錆溶剤組成物、当該防錆溶剤組成物で表面処理した軸受部品若しくは軸受、及び当該防錆溶剤組成物で表面処理した軸受部品若しくは軸受が組み込まれたスピンドルモータ、ハードディスク(HDD)装置を提供することを目的としている。
【0004】
ベアリングの構成部分である内輪・外輪・ボール等は、その機械工程を経た後、組み立てる前及び組み立て後グリース封入前に、汚れを除去するために各々洗浄工程を設けて、洗浄を行っている。この汚れは、機械加工後の油分・各種ゴミ・各種有機物・イオン汚れ等であり、洗浄液は、汚れ等の種類により選択されて使われている。この洗浄で注意しなければならないことは、構成部品が鉄系材料で出来ている場合、洗浄により表面の油が取り除かれることに加え、部品の表面が活性化しているから、錆びやすくなっているということである。だから洗浄後は、錆発生が起らないようにするために、対策工程が必要なのである。そのために、通常は洗浄工程の乾燥工程前・最終リンスの後に、1〜5vol%の防錆剤が希釈された浴槽に軸受を浸漬する防錆工程を設けている。この防錆工程に使われている従来の防錆剤は、ジエステル又はポリオールエステルを主成分とする防錆潤滑剤が使用されている。これらの防錆潤滑剤は、いずれも揮発性が高く、アウトガス発生量が多いことが判った。
【0005】
【課題を解決するための手段】
本発明者は、この問題を解決すべく鋭意研究を重ねた結果、低揮発性の炭酸エステルを主成分とし、吸着タイプ防錆添加剤を組み合わせた組成物がアウトガスを発生しにくい事実を見出して、本発明を完成するに至った。吸着タイプ防錆添加剤としてはソルビタンエステル系防錆剤が望ましい。本発明で用いる低揮発性の炭酸エステルとは、
一般式
【化3】
Figure 0004370442

(R、R’は炭素数13〜15の分岐状アルキル基であり、同一あっても異なっていても良い)で示される炭酸エステルである。
【0006】
【本発明の実施の形態】
本発明において主成分として用いる炭酸エステル化合物の代表例としては、次式
【化4】
Figure 0004370442

で示される化合物がある。また R、R’が一般式
【化5】
Figure 0004370442
(nは13〜15、mは0〜6の整数であるで示される分岐状アルキル基であり、同一あっても異なっていても良い。)で示される炭酸エステル化合物を用いることができる。防錆剤は、大きく分けて非吸着タイプ防錆剤と吸着タイプ防錆剤に分れる。非吸着タイプ防錆剤とは、金属のごく表面層を積極的に酸化させ安定化(不動態化)させることにより腐蝕速度を押さえるものであり、吸着タイプ防錆剤とは、防錆剤の吸着層および油膜による錆止め被膜の形成により、水や酸素の透過を防ぎ、腐蝕環境から金属表面を遮断し、錆の発生を防止するものである。本発明において用いるのは、吸着タイプの防錆添加剤であり、ソルビタンエステル系防錆剤やカルボン酸系防錆剤、カルボン酸塩系防錆剤、スルホン酸塩系防錆剤、アミン系防錆剤、リン系防錆剤及びリン酸塩系防錆剤がある。本発明で用いるソルビタンエステル系防錆剤としては、ソルビタンモノラウレート、ソルビタントリラウレート、ソルビタンモノステアレート、ソルビタントリステアレート、ソルビタンモノオレート、ソルビタントリオレート等があり、これらの1種又は2種以上の混合物がある。本発明で用いるカルボン酸系防錆剤としては、ウンデカン酸、ミリスチン酸、ステアリン酸、ドデシル・フェニルステアリン酸、p−n−ドデシルオキシ安息香酸、α−ヒドロキシパルミチン酸等があり、カルボン酸塩系防錆剤としてはZn−ラウレート、Zn−ナフテネート、Ba−フェニルステアレート、Ca−ナフテネート等がある。本発明で用いるスルホン酸塩系防錆剤としては、Ba−石油スルホネート、Ca−石油スルホネート等があり、アミン系防錆剤としては、オクタデセニルアミン、シクロヘキシルアミン等があり、リン系防錆剤としては、トリ−P−クレジルホスフェート、セチル・メチルアシッドホスフェート等がある。とくに、本願発明において好ましく用いられる吸着タイプの防錆添加剤としては、ソルビタンエステル系防錆剤がある。また、本発明の記憶装置用軸受防錆組成物は、趣旨に反しない範囲において、当業者が通常使用する各種の安定剤や酸化防止剤や界面活性剤等を含むことが出来る。
本発明の好適な実施の形態を、以下に示す。
(1) 一般式
【化6】
Figure 0004370442

(R、R’は炭素数13〜15の分岐状アルキル基であり、同一あっても異なっていても良い)で示される炭酸エステルと、ソルビタンエステル系防錆剤を主成分とする記憶装置用軸受防錆組成物を揮発性溶剤に1〜10vol%添加した防錆溶剤組成物。
(2) R、R’が一般式
【化7】
Figure 0004370442
(nは13〜15、mは0〜6の整数であるで示される分岐状アルキル基であり、同一であっても異なっていても良い。)で示される炭酸エステル化合物を用いる上記(1)に記載された防錆溶剤組成物。
(3)上記(1)又は上記(2)に記載した炭酸エステルとソルビタンエステル系防錆剤を主成分とする記憶装置用軸受防錆組成物を、揮発性溶剤に1〜10vol%添加した防錆溶剤組成物を用いて、表面に防錆保護被膜を設けた記憶装置用軸受部品若しくは軸受。
(4)上記(1)又は上記(2)に記載した炭酸エステルとソルビタンエステル系防錆剤を主成分とする記憶装置用軸受用防錆組成物を、揮発性溶剤に1〜10vol%添加した防錆溶剤組成物を用いて表面に皮膜された記憶装置用軸受部品若しくは軸受が組み込まれたスピンドルモータ又はハードディスク装置。
【0007】
(実施例)
本発明を実施例に基づいてさらに詳細に説明する。
防錆組成物の実施例1〜6
【化8】
Figure 0004370442
に示す炭素数13〜炭素数15の分岐状アルキルを含む有機カーボネートを含有する炭酸エステルを用い、表1に示す割合でソルビタンエステル系防錆剤を容器中で混合し、全体が液体になるまで撹拌しながら25℃〜50℃に加熱しながら、均質化することにより防錆組成物を得た。表1に防錆組成物の成分割合を示す。
【0008】
【表1】
Figure 0004370442
【0009】
(比較例)また、比較のために、従来から使用されていたジエステル系防錆剤を用いた場合を示す。
防錆溶剤組成物の実施例
実施例1〜6で得られた防錆組成物を揮発性溶剤であるフッ素系溶剤に1vol%加えて、軸受の表面洗浄処理した場合について、アウトガス発生の結果を表2に示す。
【0010】
【表2】
Figure 0004370442
アウトガスの試験条件は、
1各防錆組成物を、(I)
ベークなしの状態、(II)90℃5時間ベーク、(III)90℃12時間ベークしたものを作成し、同一の防錆組成物を3種類にして、テストした。なお、ベークとは、熱処理の意味である。表中において、Hは時間を表す。
2 ガスクロトラップ条件
イ)ダイナミックヘッドスペース法(DHS)により、85℃3時間の条件で、発生してくるガスを補足し、ガスクロマトグラフ(GC/MS)でアウトガス量を測定した。
ロ)スタチックヘッドスペース法(SHS)により、85℃16時間の条件で、発生してくるガスを補足し、ガスクロマトグラフ(GC/MS)でアウトガス量を測定した。アウトガスの評価は次の四段階で評価した。
Aは、ガス発生量**100ng/mg以下 とくに優れている。
Bは、ガス発生量**101〜200ng/mg 優れている。
Cは、ガス発生量**201〜500ng/mg 普通。
Dは、ガス発生量**501ng/mg以上 劣っている。
防錆の評価については、次の三段階で評価した。
○:防錆効果が優れている。
△:防錆効果が普通である。
×:防錆効果が劣っている。
【0011】
【本発明の効果】
本発明の防錆組成物で処理をした軸受は、表1及び表2からも明らかなように、従来の防錆組成物に比して、アウトガスの発生を大幅に抑制できるものであることを確認することができた。

Claims (4)

  1. 一般式
    Figure 0004370442
    (R、R'は炭素数13〜15の分岐状アルキル基であり、同一であっても異なっていても良い)で示される炭酸エステルと、ソルビタンエステル系防錆剤を主成分とする記憶装置用軸受防錆組成物を揮発性溶剤に1〜10vol%添加した防錆溶剤組成物。
  2. R、R'が一般式
    Figure 0004370442
    (nは13〜15、mは0〜6の整数であるで示される分岐状アルキル基であり、同一であっても異なっていても良い。)で示される炭酸エステル化合物を用いる請求項1に記載された防錆溶剤組成物。
  3. 請求項1又は請求項2に記載した炭酸エステルとソルビタンエステル系防錆剤を主成分とする記憶装置用軸受防錆組成物を、揮発性溶剤に1〜10vol%添加した防錆溶剤組成物を用いて、表面に防錆保護被膜を設けた記憶装置用軸受部品若しくは軸受。
  4. 請求項1又は請求項2に記載した炭酸エステルとソルビタンエステル系防錆剤を主成分とする記憶装置用軸受防錆組成物を、揮発性溶剤に1〜10vol%添加した防錆溶剤組成物を用いて、表面に防錆保護被膜を設けた記憶装置用軸受部品若しくは軸受が組み込まれたスピンドルモータ又はハードディスク装置。
JP32307899A 1999-10-08 1999-10-08 Hdd用低アウトガス防錆溶剤組成物 Expired - Fee Related JP4370442B2 (ja)

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US09/537,990 US6423126B1 (en) 1999-10-08 2000-03-29 Less outgas generating anticorrosive composition for HDD

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JPH09316480A (ja) * 1996-05-27 1997-12-09 Matsushita Electric Ind Co Ltd モータの軸受装置とその軸受装置を備えたスピンドルモータ
JPH11116980A (ja) 1997-10-15 1999-04-27 Ntn Corp 潤滑防錆油及び潤滑防錆油が塗布された転がり軸受
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