JP4368698B2 - Sample analyzer and method thereof - Google Patents

Description

  In the present invention, compositional analysis of a sample is performed by measuring the energy of ions (recoil ions) rebound in a predetermined direction by irradiating the sample with accelerated ions to ionize the constituent elements in the sample. More particularly, the present invention relates to a sample analyzer that measures energy based on the detection position of the recoil ions.

Conventionally, in the field of semiconductor technology and crystalline thin film technology, sample analyzers that analyze the composition of a sample using an ion beam have been widely used. In recent years, as semiconductors have become more integrated and multilayered, the demand for highly accurate film thickness measurement of ultra-thin semiconductor device materials has increased. In order to meet these demands, development and research of sample analyzers capable of analyzing with high resolution have been conducted.
One of the high-resolution sample analyzers developed in this way is a high-resolution sample analyzer Y (described in Non-Patent Documents 1 and 2). The appearance of the high-resolution sample analyzer Y is shown in FIG. The high-resolution sample analyzer Y generates an ion beam and emits it to the sample, a win filter 52 that removes impurities in the ion beam emitted from the ion generator 51, and converges the ion beam. A quadrupole magnetic lens 53 for holding the sample, a sample chamber 54 for holding the sample, a slit (not shown) for passing only ions emitted from the sample at a predetermined angle, and energy separation for deflecting the traveling direction of the ions according to the energy of the ions. An electromagnet 55, an ion detector 56 that detects the flying position of the deflected ions and measures the energy of the ions based on the flying position, a goniometer 57 that changes the incident direction of the ion beam to the sample, and the sample chamber 54 A sample exchange device 58 for taking in and out the sample is used. This high-resolution sample analyzer Y irradiates a sample with ions of a single energy (He ⁺ or the like) and collides with a component element in the sample to elastically scatter the ions (helium ions) by an energy separation electromagnet 55. The energy of the ions is measured by deflecting the magnetic field and detecting the position (flying position) where the ions deflected to the magnetic field are incident (arrived) on the ion detector 56. That is, the high-resolution sample analyzer Y measures the energy of the ions elastically scattered by the sample using Rutherford Backscattering Spectroscopy (RBS analysis method, RBS: Rutherford Backscattering Spectroscopy). According to this, it becomes possible to perform composition analysis of a sample with high resolution.
The high-resolution sample analyzer Y uses the ERD method (Elastic Recoil Detection) to measure the energy of ions (H ^+, etc.) that have been recoiled due to ionization of constituent elements in the sample by ions (N ^+, etc.). It can also be used as an ERD analyzer that performs composition analysis of a sample by measuring. That is, as shown in the schematic diagram of FIG. 5, the hydrogen ions 3 constituting the sample 4 are ionized and rebounded to a predetermined angle by collision with the ion beam of the nitrogen ions 1 (hereinafter referred to as “anti-reverse”). It is also possible to analyze the composition of the sample 4 by measuring the energy of the “recoil ion”. In this case, the mass of the nitrogen ion 1 is M ₁ , the mass of the hydrogen ion 2 is M ₂ , the incident energy of the nitrogen ion 1 is E ₀ , the recoil angle (incidence of the nitrogen ion 1 on the sample surface 5 If the angle α and the sum of the angle β in the recoil direction of the hydrogen ion 2 with respect to the sample surface 5 are θ, the energy of the hydrogen ion 2 is given by the following equation (1).

By the way, when the composition analysis of the sample is performed by detecting the recoil ions by the ERD method, the ion particles emitted from the sample include not only the recoil ions but also some ions elastically scattered by the sample. (Hereinafter referred to as “scattered ions”) may also be included, but detection by the ion detector is not preferable because it is measured as noise. Therefore, in the sample analyzer using the ERD method, it is necessary to remove the scattered ions that cause such noise. As a technique for removing the scattered ions, there are generally known a method of removing with a deflector and a method of removing with a very thin film filter.
As shown in FIG. 6, the former method of removing by the deflector is performed until ion particles (including nitrogen ions 1 and hydrogen ions 2) deflected by the energy separation electromagnet 55 reach the ion detector 56. In this method, a deflector 71 for generating an electric field (electric field) is provided, and the nitrogen ion 1 is removed based on a difference in deflection amount between the nitrogen ion 1 and the hydrogen ion 2 due to the electric field generated by the deflector 71. By this electric field, the hydrogen ions 2 having a large energy are hardly deflected, but the nitrogen ions 1 having a small energy are largely deflected and are not detected because they deviate from the ion detector 56. A sample analyzer using such a method is disclosed in Patent Document 1. The deflector 71 generates an electric field in a direction perpendicular to the detection direction (arrow A1) so that the ion flight position in the detection direction (arrow A1) detected by the ion detector 56 does not shift. It is.
Further, as shown in FIG. 7, the latter method of removing with an ultrathin film filter is an aluminum thin film, a mylar film, or the like before the ion particles deflected by the energy separation electromagnet 55 reach the ion detector 56. The ultrathin film filter 81 is provided, only the hydrogen ions 2 are allowed to pass through the ultrathin film filter, and the nitrogen ions 1 having a larger stopping power than the hydrogen ions 2 are blocked by the ultrathin film filter. This is a method for removing 1. A surface analyzer using such a method is disclosed in Patent Document 2.
Japanese Patent Application Laid-Open No. 08-136481 Japanese Patent Laid-Open No. 08-222003 K. Kimura, et al (Development of a Compact High-Resolution RBS System for Monolayer Analysis [(Applications of Accelerators in Research and Industry (1999)], p. 500-503) Yoshikazu Mori, 3 others, “R & D Kobe Steel Engineering Reports” Vol. 52, No. 52 2 (Vol. 201), Special Feature: Thin Film Technology, p. 53-56 High Resolution RBS Analyzer, [online], September 1, 2002, Kobe Steel, Ltd. Communication Center, [October 27, 2003 search], Internet <http://www.kobelco.co .jp / technology-review / vol52 # 2> or <http://www.kobelco.co.jp/technology-review/pdf/52#2/053-056.pdf>

By the way, in the prior art using the above-mentioned ERD analysis method, the hydrogen ion ionized by hydrogen present on the sample surface among the hydrogen ions reaching the ion detector has the highest energy, and therefore the spectrum of the hydrogen ions reaching the ion detector. As a matter of course, hydrogen ions coming out of the sample surface come to the end (rising part) on the high energy side of the spectrum, and hydrogen exists at any depth of the sample with reference to the end of the spectrum. Judging. Thus, the conventional technique using the ERD analysis method presupposes the use of a sample having hydrogen on the surface.
However, it is often the case that measurements are made on samples where there is no hydrogen present on the surface of the sample, and it is not known from which depth in the sample hydrogen is present, and the depth of hydrogen in such a sample. When measuring a sample whose direction origin is not known in advance, there is no effective means for associating the energy of recoil ions incident on the ion detector with the position detected by the ion detector.
Conventionally, the ultrathin film filter is sometimes provided in a composition analyzer in order not to detect scattered ions with a detector. In this case, it is possible to remove ions such as nitrogen ions 1 but the recoil ions such as hydrogen ions pass through the ultrathin film filter, so that the energy of the recoil ions spreads or varies. In addition, the energy of the recoil ions is attenuated to some extent. In this case as well, there is a problem that the energy of ions cannot be measured accurately, and the analysis capability (energy resolution) and reliability of the sample analyzer are reduced.
Furthermore, an attempt has been made to prevent the scattered ions from entering the detector by providing a deflector for deflecting recoil ions and scattered ions in a direction perpendicular to the detection direction of the ion detector.
However, the technique for providing a deflector as described above has a problem that an electrode for forming an electric field of the deflector and a high-voltage power supply are required, and the apparatus configuration is complicated.
Therefore, the present invention has been made in view of the above circumstances. The first object of the present invention is to measure recoil ions in advance without providing the ultrathin film filter or the like when measuring the energy of recoil ions. By directly measuring the maximum energy, it is possible to calibrate the measuring device, and the energy of the recoil ion can be obtained from the collision position in the recoil ion detection means that is actually measured, and the hydrogen depth can be measured. A sample analyzer and a sample analysis method are provided.
The second object is to provide a sample measuring apparatus capable of distinguishing recoil ions and scattered ions using an energy sensitive detection element in order to avoid measurement errors in detecting scattered ions scattered by incident ions. Is to provide.

To achieve the above object, the present invention provides an ion irradiation means for irradiating a sample held in a predetermined vacuum container with an ion beam emitted from an ion generator, and the sample is irradiated with an ion beam by the ion irradiation means. Energy separating means for deflecting the traveling direction of recoil ions, which are ionized from the atoms constituting the sample and recoiled to a predetermined angle, according to the energy of the recoil ions, and the energy An ion detection means for detecting a flight position of the recoil ions deflected by the separation means in a predetermined detection direction; the recoil ions deflected by the energy separation means; the detection direction and the energy content of the electric field generating means for applying a plurality of different electric fields for deflecting the the reflected-recoil ions in the same direction Provided between the means and the ion detector, the sample was irradiated with ions in a state in which generate different electric fields by the field generating means, the recoil ions irradiated to the ion detection means via said electric field generating means is configured as a sample analyzing apparatus characterized that you detect differences in the collision position of the ion corresponding to the different fields.
In the measurement of the sample, first a sample was irradiated with ions in a state which caused a different field by said electric field generating means, the recoil ions irradiated to the ion detection means via said electric field generating means, to said different field The difference in the collision position of the corresponding ions is detected. The energy of the recoil ion itself is measured from the difference between the collision positions and the stepped electric field applied to the electric field generating means, as will be described in detail later.
When the energy of recoil ions colliding with the ion detection means and the collision position are known, the collision position on the ion detection means of recoil ions having an arbitrary energy is calculated by the method described in FIG. Is done. Therefore, if the energy of recoil ions that collide with the ion detection means is known by applying a plurality of electric fields by the above electric field generating means, the collision position on the ion detection means of the recoil ions having an arbitrary energy can be determined. Even in the actual measurement field, the depth of the sample where the ions have recoiled is detected from the collision position of the recoil ions from the sample on the ion detection means.

Since there are scattered nitrogen ions and recoil hydrogen ions that travel along the same trajectory, they collide at the same position on the detector and cannot be distinguished, resulting in an error in spectrum acquisition.
Therefore, in the present invention, focusing on the difference in energy between recoil hydrogen ions and scattered nitrogen ions, the energy sensitive detection means is used as the ion detection means so that the nitrogen and hydrogen can be distinguished.

As described above, according to the present invention, the recoiled ions deflected by the energy separation means are provided between the energy separation means and the ion detection means provided in the sample analyzer using the ion beam. An electric field generating means for applying an electric field for deflecting the recoil ions in the same direction as the detection direction is provided, and the ions on the ion detecting means change by stepwise adjusting the electric field applied by the electric field generating means. The energy of the ion is calculated from the change of the collision position, and the recoil of the actual ion is calculated from the correspondence between the ion energy obtained by a known method and the collision position of the ion on the ion detection means using this information. It is possible to calculate the depth.
In the present invention, a position sensitive detector such as a semiconductor detector with high energy resolution is used as the ion detecting means, so that even in an environment where scattered ions and hydrogen ions of incident ions having different energies are detected simultaneously. , It is possible to detect only hydrogen ions. This also results in increased energy resolution and reliability of the device.

Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings for understanding of the present invention. The following embodiment is an example embodying the present invention, and does not limit the technical scope of the present invention.
Here, FIG. 1 is a schematic diagram showing a schematic configuration of an ERD analyzer X according to an embodiment of the present invention and a motion trajectory of ion particles, and FIG. 2 is used for the ERD analyzer X according to the embodiment of the present invention. FIG. 3 is a block diagram showing a schematic configuration of a semiconductor detector, FIG. 3 is a diagram showing a relationship between an ion detection channel corresponding to the electric field strength given by the electric field generator and a spectrum at that time, and FIG. 4 is a conventional high-resolution sample analyzer. FIG. 5 is a schematic diagram showing the motion trajectory of ions scattered or recoiled from the sample, and FIG. 6 is a schematic diagram for explaining a conventional method for removing scattered ions using a deflector. FIG. 7 is a schematic diagram for explaining a conventional method of removing scattered ions using an ultrathin film filter.

First, the schematic configuration of the ERD analyzer X according to the embodiment of the present invention will be described with reference to the schematic diagram of FIG. 1 and the overall view of FIG. Needless to say, this ERD analyzer X is a sample analyzer that analyzes the composition of a sample by measuring the energy of ions that are ionized by the incident ions and recoiled to a predetermined angle. Is just an example.
The ERD analyzer X generates nitrogen ions 1 from nitrogen gas, accelerates the nitrogen ions 1 to several hundred keV to several MeV, and the accelerated nitrogen ions 1 (corresponding to an ion beam) are shown in FIG. An ion generator 51 (an example of ion irradiation means) for irradiating the sample 4 held by the chamber 54, a win filter 52 for removing impurities in the nitrogen ions 1 emitted from the ion generator 51, and the nitrogen ions 1 A quadrupole magnetic lens 53 for focusing, a sample chamber 54 for holding the sample 4 (corresponding to a vacuum vessel), and a slit 17 through which only ion particles (including scattered ions and recoil ions) emitted from the sample 4 at a predetermined angle pass. , An energy separation electromagnet 55 (an example of energy separation means) that deflects the traveling direction of the ion particles according to the energy of the ion particles, The high-resolution sample analyzer Y (see FIG. 4) is substantially the same as the goniometer 57 that changes the incident direction of the nitrogen ions 1 to the sample chamber, the sample exchange device 58 that puts the sample in and out of the sample chamber 54, and the like. It is constituted similarly. However, as shown in FIG. 1, the ERD analyzer X determines the flight position (detection position) of the recoil ion 2 deflected by the energy separation electromagnet 55 with respect to a predetermined detection direction (arrow A1 in FIG. 1). The point of using a semiconductor detector 16 (an example of an ion detection means) as an example of an energy sensitive detector as an ion detector to be detected, and the recoil ions 2 deflected by the energy separation electromagnet 55, The electric field generator 11 (an example of electric field generating means) that applies an electric field (electric field) for deflecting the recoil ions 2 in the same direction (arrow A2) as the detection direction (arrow A1) is the energy separating electromagnet 55 and the semiconductor. It differs from the above-described high-resolution sample analyzer Y in that it is provided between the detector 16 and the detector 16.

Here, the semiconductor detector 16 will be briefly described with reference to the block diagram of FIG. The semiconductor detector 16 is a conventionally known energy sensitive ion detector using a semiconductor such as silicon or germanium. Since such an energy sensitive ion detector 16 is divided into a plurality of channels in the X direction in FIG. 1, the energy separating electromagnet 55 for recoil ions and the electric field generator 11 (an example of an electric field generator) are used. The degree of deflection can be detected by the position of the channel where the ions collide, and since it is an energy sensitive detector, the output pulse wave height varies depending on the energy of the incident ion particles. Therefore, recoil particles (for example, hydrogen ions) and scattered particles (for example, nitrogen ions) are obtained by using a detector having an energy resolution of about 20 keV (energy resolution of a normal semiconductor detector) or more and performing a pulse height analysis of the output pulse. ) Signal can be distinguished and measured. Since such an energy sensitive ion detector is well known, detailed description thereof is omitted here.
The semiconductor detector 16 has a plurality of channels for detecting the position of recoil ions 2 incident (arrived) on the semiconductor detector 16 as described above, and detection signals of the recoil ions 2 detected by the channels. An amplifier 21 to be amplified, an A / D converter 22 for digitizing the detection signal amplified by the amplifier 21, an arithmetic process based on the digitized detection signal and equations (2) to (4) described later. It is comprised by the calculation control part 23 to perform. An input device 25 such as a keyboard is connected to the arithmetic processing unit 23, and data (information) used for arithmetic processing in the arithmetic processing unit 23 is input (set) by the operation of the input device 25. The The calculation result by the calculation processing unit 23 is output to an external output device (not shown) such as an externally connected printer or CRT.
The arithmetic processing unit 23 includes a CPU 31 (central processing unit), a RAM 32, a memory 33, and the like. The memory 33 stores various data used for arithmetic processing input from the input device 25, arithmetic results, arithmetic programs based on mathematical formulas described later, and the like. The CPU 31 stores these data and arithmetic programs. The RAM 32 reads out and executes arithmetic processing based on the arithmetic program.

Next, the operation of the ERD analyzer A will be described using the schematic diagram of FIG.
When the sample 4 is irradiated with a nitrogen ion beam emitted from the ion generator 51 and collides with a hydrogen atom constituting the sample 4, a part of the hydrogen atom is ionized and energy corresponding to the depth from the sample surface is obtained. Are rebounded to a predetermined angle to become recoil ions 2 (hydrogen ions). At the same time, when a part of the nitrogen ion beam collides with the composition element constituting the sample 4, it is elastically scattered to a predetermined angle with a certain energy to become scattered ions 1 (nitrogen ions).
Of these ions, only the ions that have passed through the slit 17 provided between the sample 4 and the energy electromagnet 55 have their movement direction (traveling direction) depending on the energy of each ion by the energy electromagnet 55. Deflected. In the present embodiment, a magnetic field (magnetic flux density B [T]) is applied to the energy electromagnet 55 in a direction perpendicular to the paper surface in FIG. 1 and extending through the paper surface from the front to the back (arrow A3). Therefore, each ion passing through the energy separating electromagnet 55 is deflected by a force acting in a direction (arrow A4) perpendicular to the traveling direction (flying direction) and the magnetic field (magnetic flux) direction (arrow A3).
The scattered ions 1 and the recoil ions 2 deflected by the energy electromagnet 55 are then passed through the electric field applied in the direction of the arrow A2 by the electric field generator 11, thereby causing the direction of the arrow A2. That is, the energy electromagnet 55 is further deflected toward the negative electrode side.

According to the present invention, the surface rising energy of the spectrum can be obtained as follows. This will be described with reference to FIG.
Consider recoil particles that have passed through an energy separating magnet. The deflection amount y of the ion beam by the uniform electrostatic field is expressed by the following equation.
y = lLV / (DE) (2)
However, 2l is the distance where the electrostatic field is generated (L1 in FIG. 1), V is the voltage between the electrodes, L is the distance from the center of the uniform electrostatic field to the position detector (L2 in FIG. 1), E is the ion Energy D is the distance between the electrodes. That is, it can be seen that the ion beam deflection amount y by the uniform electrostatic field is proportional to the electric field strength. Here, let us consider a case in which the recoil particles that have passed through the energy separation magnets collide with the ion detector 16 while changing the voltage between the electrodes in two steps V1 and V2. That is, the spectrum is acquired by generating the inter-electrode voltage V1 by the electric field generating means based on the formula (2), and the channel number ch1 of the rising surface of the spectrum is obtained. Similarly, V2 is generated to acquire the spectrum, and the channel number ch2 of the surface rising of the spectrum is obtained. Using the difference dch = ch2-ch1 between the two and the total length of the position detector W, the distance difference dy on the position detector by the electric field generating means is
dy = W x d _ch / total number of channels (3)
It is represented by Thus, when the channel numbers ch1 and ch2 at the rise of the spectrum in each condition V1 and V2 are measured, the difference d _ch between ch1 and ch2 corresponds to the difference in the distance on the position detector, so that the difference dy in the deflection distance can be found.
If the deflection amounts when the voltages V1 and V2 are applied between the electrodes are y1 and y2, the difference Δy between y1 and y2 is the above dy. Difference of y in equation (2) for each of V1 and V2 Δy = y1−y2 = lLV1 / (DE) −lLV2 / (DE)
= LL (V1-V2) / (DE)
Therefore,
E = lL (V1-V2) / (ΔyD) (4)
Thus, by measuring Δy, the energy E indicating the rising of the spectrum of recoil ions recoiled from the sample can be obtained.
If the collision position on the ion detector 16 of recoil ions with known energy is known, the correspondence between the energy of any ion and the collision position on the ion detector 16 can be determined by a known method. In this way, it is the role of the electric field generator 11 that associates energy and channels with the electrostatic field, and therefore it is not necessary to generate an electric field after such association (calibration). That is, the electrostatic field is turned off during measurement.

Further, as described above, not only recoil particles pass through a certain magnetic field intensity, but there are also scattered particles that cause noise in the recoil particle analysis. However, they differ in energy according to mass (inverse proportion). For example, when the recoil particles are hydrogen ions and the scattering particles are nitrogen ions, the energy passing through the energy separation magnet (center radius 150 mm) with a magnetic field strength of 0.26 T is 73 keV and 5 keV, respectively. The energy-sensitive silicon semiconductor detector 16, for example, has a pulse height that varies depending on the energy of the incident particles, and therefore outputs using a detector with an energy resolution of about 20 keV (normal semiconductor detector energy resolution) or higher. By measuring the pulse height, the signals of recoil particles and scattered particles are measured separately. Thereby, the recoil particle and scattered particle spectra can be acquired simultaneously. Of course, if an energy discriminating mechanism (or circuit) is added so that only pulses exceeding a certain threshold pass, the spectrum of only recoil particles can be easily acquired.
The pulse peak value from Ach is now Va, and the pulse peak value from Bch is Vb. Both signals are judged for coincidence by a coincidence judgment mechanism (or circuit). That is, only when both signals are input simultaneously, the signal is regarded as a true signal that is not noise, and is output to the next mechanism (or circuit). Next, the position calculation mechanism (or circuit) calculates the position on the incident position detector. That is, the position x on the position detector is calculated by x = Va / (Va + Vb).
The use of the electric field generating means as described above and the use of an energy sensitive detector as the detector are not particularly related. Therefore, they may be performed separately or simultaneously. Even if the electric field generating means for determination is installed between the energy separation magnet and the electric field generating means for removing scattered particles (or scattered particle removing film), the electric field generating means for removing scattered particles (or scattered particle removing film) and position detection Even if it is installed between the chambers, it may be installed at a position rotated 90 ° in the same stage as the electric field generating means (or scattered particle removing film) for removing scattered particles.

The schematic diagram which shows the schematic structure of the ERD analyzer X which concerns on embodiment of this invention, and the movement locus | trajectory of an ion particle. FIG. 2 is a block diagram showing a schematic configuration of a semiconductor detector used in the ERD analyzer X according to the embodiment of the present invention. The figure which shows the relationship with the detection channel of the ion according to the electric field strength given by an electric field generator, and the spectrum at that time. The whole figure which shows the structure of the conventional high-resolution sample analyzer Y. The schematic diagram which shows the movement locus | trajectory of the ion scattered or recoiled from the sample. The schematic diagram for demonstrating the conventional method of removing a scattered ion using a deflector. The schematic diagram for demonstrating the conventional method of removing a scattered ion using a very thin film filter.

Explanation of symbols

1 ... Nitrogen ions (an example of scattered ions)
2 ... Hydrogen ion (an example of recoil ion)
3 ... Hydrogen atom 4 ... Sample 5 ... Sample surface 11 ... Electric field generator (an example of electric field generating means)
16 ... Semiconductor detector (an example of ion detection means)
17 ... Slit 21 ... Amplifier 22 ... A / D conversion circuit 23 ... Operation control unit 25 ... Input device 31 ... CPU
32 ... RAM
33 ... Memory 51 ... Ion generator 52 ... Win filter 53 ... Quadrupole magnetic lens 54 ... Sample chamber (vacuum container)
55. Energy separation electromagnet (an example of energy separation means)
56 ... Ion detector 57 ... Goniometer 58 ... Sample exchange device 71 ... Deflector 81 ... Ultrathin film filter

Claims (4)

An ion irradiation means for irradiating a sample held in a predetermined vacuum container with an ion beam emitted from an ion generator;
When the sample is irradiated with an ion beam by the ion irradiation means, the energy of the recoil ions has a traveling direction of recoil ions in which atoms constituting the sample are ionized and recoiled to a predetermined angle. Energy separating means for deflecting according to
Ion detection means for detecting a flight position of the recoil ions deflected by the energy separation means with respect to a predetermined detection direction;
In a sample analyzer equipped with
An electric field generating means for applying a plurality of different electric fields for deflecting the recoil ions in the same direction as the predetermined detection direction to the recoil ions deflected by the energy separation means, the energy separation means and the ion detection means. In preparation for ,
The sample is irradiated with ions in a state where different electric fields are generated by the electric field generating means, the recoil ions are irradiated to the ion detecting means through the electric field generating means, and the collision position of the ions corresponding to the different electric fields is detected. sample analysis apparatus characterized that you detect the difference. Upper Symbol ion detection means, the sample analyzer according to claim 1 energy sensitive detector.   3. The sample analyzer according to claim 1, wherein the ion detector is a semiconductor detector using a semiconductor. An ion irradiation step of irradiating a sample held in a predetermined vacuum container with an ion beam emitted from an ion generator;
When the sample is irradiated with an ion beam in the ion irradiation step, the energy of the recoil ions has a traveling direction of recoil ions in which atoms constituting the sample are ionized and recoiled to a predetermined angle. An energy separation process that deflects according to
An ion detection step of detecting a flight position of the recoil ions deflected by the energy separation step with respect to a predetermined detection direction;
In a sample analysis method comprising:
Prior to detecting the recoil ion flight position by irradiating the actual sample with ions,
A simulated sample is irradiated with ions, and an electric field that deflects the recoil ions deflected through the ion irradiation step and the energy separation step in the same direction as the predetermined detection direction is defined as an electric field. after a field effect step of reacting with the field intensity is varied in multiple stages, by way of the ion detection step detects the ejecting position of the recoil ions in the original of the different field strength, whereby the energy of the recoil ions A sample analysis method characterized in that a relationship between a flight position and a flight position is acquired in advance.

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