JP4364611B2 - 結晶性半導体膜の作製方法 - Google Patents

結晶性半導体膜の作製方法 Download PDF

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Publication number
JP4364611B2
JP4364611B2 JP2003394924A JP2003394924A JP4364611B2 JP 4364611 B2 JP4364611 B2 JP 4364611B2 JP 2003394924 A JP2003394924 A JP 2003394924A JP 2003394924 A JP2003394924 A JP 2003394924A JP 4364611 B2 JP4364611 B2 JP 4364611B2
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laser
semiconductor film
laser beam
film
beam spot
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JP2003394924A
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JP2004193592A (ja
JP2004193592A5 (enExample
Inventor
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2004193592A5 publication Critical patent/JP2004193592A5/ja
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JP2003394924A 2002-11-29 2003-11-26 結晶性半導体膜の作製方法 Expired - Fee Related JP4364611B2 (ja)

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JP2003394924A JP4364611B2 (ja) 2002-11-29 2003-11-26 結晶性半導体膜の作製方法

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JP2002349007 2002-11-29
JP2003394924A JP4364611B2 (ja) 2002-11-29 2003-11-26 結晶性半導体膜の作製方法

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JP2004193592A JP2004193592A (ja) 2004-07-08
JP2004193592A5 JP2004193592A5 (enExample) 2006-05-25
JP4364611B2 true JP4364611B2 (ja) 2009-11-18

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4481040B2 (ja) * 2003-03-07 2010-06-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100514996B1 (ko) 2004-04-19 2005-09-15 주식회사 이오테크닉스 레이저 가공 장치
SG11201405535PA (en) * 2012-04-18 2014-11-27 Applied Materials Inc Apparatus and method to reduce particles in advance anneal process
CN104282539A (zh) * 2013-07-04 2015-01-14 上海和辉光电有限公司 一种多晶硅制作方法
US9343307B2 (en) * 2013-12-24 2016-05-17 Ultratech, Inc. Laser spike annealing using fiber lasers

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JP2004193592A (ja) 2004-07-08

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