JP4361591B1 - DIE MOUNTING APPARATUS AND DIE MOUNTING METHOD - Google Patents

DIE MOUNTING APPARATUS AND DIE MOUNTING METHOD Download PDF

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JP4361591B1
JP4361591B1 JP2008176203A JP2008176203A JP4361591B1 JP 4361591 B1 JP4361591 B1 JP 4361591B1 JP 2008176203 A JP2008176203 A JP 2008176203A JP 2008176203 A JP2008176203 A JP 2008176203A JP 4361591 B1 JP4361591 B1 JP 4361591B1
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Prior art keywords
distance
semiconductor die
collet
bump
adsorbed
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Expired - Fee Related
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JP2008176203A
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Japanese (ja)
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JP2010016262A (en
Inventor
前田　　徹
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Shinkawa Ltd
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Shinkawa Ltd
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Priority to JP2008176203A priority Critical patent/JP4361591B1/en
Priority to PCT/JP2008/073008 priority patent/WO2010001501A1/en
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Publication of JP4361591B1 publication Critical patent/JP4361591B1/en
Publication of JP2010016262A publication Critical patent/JP2010016262A/en
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
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Abstract

【課題】金属ナノインクを用いて形成したバンプ同士を重ね合わせる際のバンプの潰れを抑制する。
【解決手段】コレット１３に吸着されている半導体ダイ２１のバンプ２３が形成された側の面２４と基板３１のバンプ３３が形成された側の面３４とのコレット１３の降下方向に沿った距離を取得する距離取得手段と、距離取得手段によって取得した距離に応じてコレット１３に吸着されている半導体ダイ２１のバンプ２３先端が基板３１のバンプ３３先端の直上に来るまでコレット１３を基板３１に向かって降下させた後、コレット１３の半導体ダイ２１の吸着を開放して半導体ダイ２１のバンプ２３を基板３１のバンプ３３に重ね合わせる。
【選択図】図９Bump collapse is suppressed when bumps formed using metal nano ink are overlapped.
A distance along a descending direction of a collet 13 between a surface 24 of a semiconductor die 21 adsorbed by a collet 13 on a side on which a bump 23 is formed and a surface 34 on a side of a substrate 31 on which a bump 33 is formed. And the collet 13 on the substrate 31 until the tip of the bump 23 of the semiconductor die 21 adsorbed to the collet 13 is directly above the tip of the bump 33 of the substrate 31 according to the distance acquired by the distance acquisition unit. After being lowered, the suction of the semiconductor die 21 of the collet 13 is released, and the bumps 23 of the semiconductor die 21 are superposed on the bumps 33 of the substrate 31.
[Selection] Figure 9

Description

本発明は、金属ナノインクを用いてバンプが形成された半導体ダイを基板または他の半導体ダイに重ね合わせるダイマウント装置およびダイマウント方法に関する。 The present invention relates to a die mounting apparatus and die mount method bumps semiconductor die group Saitama other formed is superimposed on another semiconductor die using a metal nano ink.

半導体ダイなどの電子部品の電極と回路基板上の回路パターンの電極との接合には、半導体ダイなどの電子部品の電極面上に金バンプを形成し、半導体ダイを反転させて半導体ダイの金バンプを回路基板の電極に形成された金バンプに向けて押し付けて接合するフリップチップボンディング方法が用いられている。   To bond the electrode of an electronic component such as a semiconductor die and the electrode of a circuit pattern on a circuit board, a gold bump is formed on the electrode surface of the electronic component such as a semiconductor die, and the semiconductor die is inverted to A flip chip bonding method is used in which bumps are pressed and bonded to gold bumps formed on electrodes of a circuit board.

フリップチップボンディングでは、半導体ダイに設けられている複数の電極と基板の複数の電極それぞれに金バンプを形成し、この複数の金バンプ同士を同時に押し付けて接合するので、各金バンプの高さがある一定範囲に入っていることが必要となってくる。金バンプの高さにばらつきがあると、高さの高い金バンプの部分は先に潰れて接合されるが、低い金バンプの部分は更に半導体ダイに押圧荷重を掛けて、既に接合されている金バンプを潰しながら接合することが必要で、全ての金バンプを適正に接合しようとすると半導体ダイに大きな押圧力をかけることが必要となってくる。しかし、近年の半導体ダイの薄型化によって、フリップチップボンディングの際の押圧力によって半導体ダイが損傷を受ける場合がある。また、接合しようとする半導体ダイが大きくなると、同時に接合するバンプの数が多くなることから、バンプの高さのみでなく半導体ダイと基板とを平行に保つことが必要となってくる。   In flip-chip bonding, gold bumps are formed on each of a plurality of electrodes provided on a semiconductor die and a plurality of electrodes on a substrate, and the plurality of gold bumps are pressed together to be bonded together. It must be within a certain range. If there are variations in the height of the gold bumps, the gold bump portion with the high height is crushed and bonded first, but the low gold bump portion is already bonded by applying a pressing load to the semiconductor die. It is necessary to bond the gold bumps while crushing them, and it is necessary to apply a large pressing force to the semiconductor die in order to properly bond all the gold bumps. However, due to the recent thinning of the semiconductor die, the semiconductor die may be damaged by the pressing force during flip chip bonding. Further, when the semiconductor die to be bonded becomes large, the number of bumps to be bonded simultaneously increases, so it is necessary to keep not only the height of the bump but also the semiconductor die and the substrate in parallel.

特許文献１には半導体ダイを基板に実装する際に、半導体ダイと基板との間に距離センサを進出させて距離を３箇所以上で測定し、この測定結果に基づいて半導体ダイと基板との平行度を調整した後、半導体ダイを基板に実装する方法が提案されている。   In Patent Document 1, when a semiconductor die is mounted on a substrate, a distance sensor is advanced between the semiconductor die and the substrate and the distance is measured at three or more locations. Based on the measurement result, the distance between the semiconductor die and the substrate is measured. A method of mounting a semiconductor die on a substrate after adjusting the parallelism has been proposed.

また、電極上に形成した金バンプ同士を押し付けて接合する方法は、半導体ダイに掛かる荷重が大きくなることから、金バンプを用いずに各電極を接合する方法として金属の超微粒子を含む金属ペーストを用いる色々な方法が提案されている。   Also, the method of pressing and bonding the gold bumps formed on the electrodes increases the load applied to the semiconductor die, so that a metal paste containing ultrafine metal particles is used as a method of bonding the electrodes without using gold bumps. Various methods have been proposed using.

特許文献２には、回路基板の端子電極上に銀の超微粉末を溶剤に分散させて調製した銀微粒子ペーストのボールを形成し、半導体素子の電極を回路基板の端子電極上に形成したボール上にフェースダウン法で接合した後に、銀微粒子ペースト中のトルエン等の溶剤を蒸発させた後、１００から２５０℃の温度で焼成して半導体素子と回路基板とを電気的に接合する方法が提案されている。この方法の場合、焼成温度を２００から２５０℃とした際には熱風炉にて３０分間の焼成を行うことによって電気的接合を行うことが提案されている。   In Patent Document 2, a ball of a silver fine particle paste prepared by dispersing ultrafine silver powder in a solvent is formed on a terminal electrode of a circuit board, and an electrode of a semiconductor element is formed on the terminal electrode of the circuit board A method is proposed in which a semiconductor element and a circuit board are electrically joined by bonding them by a face-down method, evaporating a solvent such as toluene in a silver fine particle paste, and then baking at a temperature of 100 to 250 ° C. Has been. In the case of this method, it has been proposed that when the firing temperature is 200 to 250 ° C., electrical joining is performed by firing for 30 minutes in a hot air furnace.

特許文献３には、半導体ダイの電極の上に金バンプを形成し、この金バンプの先端に導電性ペーストを転写して、導電性ペーストを介して金バンプと基板とを接続する方法が提案されている。この場合、金バンプの先端に一様に導電性ペーストを塗布するために、半導体チップの高さ方向位置と、受け皿に収容されている導電性ペーストの液面とを変位計によって計測し、半導体ダイのバンプに導電性ペーストを転写するのに必要な量だけ半導体ダイを降下させて半導体ダイのバンプを導電性接合材に浸漬される方法が提案されている。   Patent Document 3 proposes a method in which a gold bump is formed on an electrode of a semiconductor die, a conductive paste is transferred to the tip of the gold bump, and the gold bump and the substrate are connected via the conductive paste. Has been. In this case, in order to uniformly apply the conductive paste to the tip of the gold bump, the height direction position of the semiconductor chip and the liquid level of the conductive paste contained in the tray are measured by a displacement meter, and the semiconductor There has been proposed a method in which the semiconductor die is lowered by an amount necessary to transfer the conductive paste to the bumps of the die and the bumps of the semiconductor die are immersed in the conductive bonding material.

特開平５−３２６６３３号公報JP-A-5-326633 特開平９−３２６４１６号公報Japanese Patent Laid-Open No. 9-326416 特開平１０−１５００７５号公報Japanese Patent Laid-Open No. 10-150075

ところで、金属微粒子を混合させた金属ナノペーストまたは金属ナノインクを用いて半導体ダイまたは基板の電極の上にバンプを形成し、半導体ダイを反転させて基板の電極に形成したバンプの上に半導体ダイの電極の上に形成したバンプを重ね合わせた後、焼結して各電極間を接続する方法がある。このような場合、電極の上に形成された金属ナノインクを用いたバンプは固相ではなく、液相状態の場合が多い。このような液相状態のバンプ同士を重ね合わせる場合に、半導体ダイを基板に対して押し付けてしまうと液相状態のバンプが潰れてしまい、焼結後に適切な接合金属高さが形成できなかったり、つぶれた金属ナノインクが横に流出して隣接する電極間を接続してしまったりすることによる接合不良が発生するという問題があった。   By the way, bumps are formed on the electrodes of the semiconductor die or the substrate using metal nano paste or metal nano ink mixed with metal fine particles, and the semiconductor die is inverted on the bumps formed on the electrodes of the substrate by inverting the semiconductor die. There is a method in which bumps formed on electrodes are superposed and then sintered to connect each electrode. In such a case, the bump using the metal nano ink formed on the electrode is often not in a solid phase but in a liquid phase. When these bumps in the liquid phase are overlaid, if the semiconductor die is pressed against the substrate, the bumps in the liquid phase will be crushed and an appropriate joint metal height may not be formed after sintering. However, there is a problem that a defective bonding occurs due to the crushed metal nano ink flowing laterally and connecting adjacent electrodes.

本発明は、金属ナノインクを用いて形成したバンプ同士を重ね合わせる際のバンプの潰れを抑制することを目的とする。   An object of the present invention is to suppress the collapse of bumps when the bumps formed using the metal nano ink are overlapped with each other.

本発明のダイマウント装置は、金属ナノ粒子を有機溶剤中に混合させた金属ナノインクを用いて電極上にバンプが形成された半導体ダイを、金属ナノインクを用いて電極上にバンプが形成された基板または金属ナノインクを用いて電極上にバンプが形成された他の半導体ダイの上にフェースダウンして半導体ダイを基板または他の半導体ダイに重ね合わせるダイマウント装置であって、基板または他の半導体ダイのバンプ側に配置された第１の距離センサと、コレットに吸着された半導体ダイのバンプ側に配置された第２の距離センサと、第１の距離センサと第２の距離センサとの間に配置され、基板表面または他の半導体ダイの表面に沿った方向に伸びるリファレンス部材と、半導体ダイを吸着して基板または他の半導体ダイに向かって降下するコレットと、コレットの降下を制御する制御部とを含み、制御部は、リファレンス部材の第１の距離センサ側の面と第１の距離センサとの間のコレット降下方向に沿った第１の距離と、基板のバンプ側表面または他の半導体ダイのバンプ側表面と第１の距離センサとの間のコレット降下方向に沿った第２の距離とを第１の距離センサによって取得し、第１の距離と第２の距離の差として第１の距離差を検出し、リファレンス部材の第２の距離センサ側の面と第２の距離センサとの間のコレット降下方向に沿った第３の距離と、コレットに吸着された半導体ダイのバンプ側の表面と第２の距離センサとの間のコレット降下方向に沿った第４の距離とを第２の距離センサによって取得し、第３の距離と第４の距離との差として第２の距離差を検出し、第１の距離差と第２の距離差の和からリファレンス部材のコレット降下方向に沿った厚さを差し引いてコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った距離を取得する距離取得手段と、距離取得手段によって取得した距離に応じてコレットに吸着されている半導体ダイのバンプ先端が基板または他の半導体ダイのバンプ先端の直上に来るまでコレットを基板または他の半導体ダイに向かって降下させた後、コレットの半導体ダイの吸着を開放して半導体ダイのバンプを基板または他の半導体ダイのバンプに重ね合わせる重ね合わせ手段と、を有することを特徴とする。 The die mount apparatus of the present invention is a semiconductor die in which bumps are formed on electrodes using metal nano ink in which metal nanoparticles are mixed in an organic solvent, and a substrate in which bumps are formed on electrodes using metal nano ink. Saitama other is a die mount device bumps group Saitama other semiconductor die by face-down on top of other semiconductor dies formed is superimposed on another semiconductor die on an electrode by using a metal nano ink, groups Saitama other a first distance sensors disposed in the bump side of the other semiconductor die, and a second distance sensor which is arranged on the bump side of the semiconductor die adsorbed by the collet, the first distance sensor is disposed between the second distance sensor, the substrate table Menma other and the reference member extending in a direction along the surface of another semiconductor die, based Saitama other adsorbs semiconductor die to other semiconductor die Descending And a control unit that controls the collet descent. The control unit includes a first collimating direction between the first distance sensor side surface of the reference member and the first distance sensor. and distance bump side table Menma other substrate acquires a second distance along the collet descent direction between the bump side surface of another semiconductor die first distance sensor by a first distance sensor The first distance difference is detected as the difference between the first distance and the second distance, and the first distance along the collet lowering direction between the second distance sensor side surface of the reference member and the second distance sensor is detected. 3 and a fourth distance along the collet descending direction between the second distance sensor and the bump-side surface of the semiconductor die adsorbed on the collet are acquired by the second distance sensor. The second distance difference as the difference between the distance and the fourth distance Detecting a first distance difference and the surface and the substrate table Menma other semiconductor die are adsorbed from the sum of the second distance difference collet by subtracting the thickness along the collet descent direction of the reference member of the other a distance obtaining means for obtaining a distance along the descent direction of the collet to the semiconductor die surface, the distance the top end of the bump of the semiconductor die that is adsorbed to the collet based Saitama other according to the distance obtained by the obtaining means other the collet the group Saitama other until immediately above of the semiconductor die bump tip after descends toward the other semiconductor die, based Saitama other bumps of the semiconductor die by opening the suction of the semiconductor die collet And a superimposing means for superimposing on a bump of another semiconductor die.

本発明のダイマウント装置において、重ね合わせ手段は、距離取得手段によって取得したコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面との距離からコレットに吸着されている半導体ダイの表面からのバンプ高さと基板または他の半導体ダイの表面からのバンプの高さとを差し引いた距離だけコレットを降下させること、としても好適であるし、距離取得手段は、コレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った距離を複数取得し、重ね合わせ手段は、距離取得手段によって取得したコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面との複数の距離の内の最も小さい距離からコレットに吸着されている半導体ダイの表面からのバンプ高さと基板または他の半導体ダイの表面からのバンプの高さとを差し引いた距離だけコレットを降下させること、としても好適である。 A die mounting device of the present invention, superimposing means, the surface and the substrate table Menma another semiconductor die adsorbed on the acquired collet by the distance obtaining means is adsorbed from the distance between the other semiconductor die surface collet and the bump height and groups Saitama another from the surface of the semiconductor die are lowering the distance collet obtained by subtracting the height of the bump from the surface of another semiconductor die, also to be suitable as a distance obtaining means , surface and the substrate table Menma another semiconductor die being adsorbed on collet plurality acquires distance along the descent direction of the collet with the other semiconductor die surface, superimposing means were obtained by the distance obtaining means surface and the substrate table Menma another semiconductor die adsorbed on the collet have been adsorbed from the smallest distance among the plurality of distances between the other semiconductor die surface collet Bump height and groups from the surface of the semiconductor die Saitama others lowering the distance collet obtained by subtracting the height of the bump from the surface of another semiconductor die, it is also preferable.

本発明のダイマウント装置において、制御部は、コレットに吸着されている半導体ダイの表面の距離測定を行う位置と基板表面または他の半導体ダイの表面の距離測定を行う位置とを検出する距離測定位置検出手段を備え、距離取得手段は、コレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った距離をそれぞれ少なくとも３つ取得し、重ね合わせ手段は、検出した距離測定位置と、コレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った各距離測定位置での距離と、によってコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面との間の最小面間距離を算出し、最小面間距離からコレットに吸着されている半導体ダイの表面からのバンプ高さと基板または他の半導体ダイの表面からのバンプの高さとを差し引いた距離だけコレットを降下させること、としても好適である。 A die mounting device of the present invention, the control unit, the position and the substrate table Menma other to perform distance measurement of the surface of the semiconductor die that is adsorbed on collet detect the position for the distance measurement of the surface of another semiconductor die comprising a distance measuring position detecting means for the distance acquisition means, the surface and the substrate table Menma another semiconductor die being adsorbed by the collet at least the distance along the descent direction of the collet with the other semiconductor die surface, respectively three acquired, the superimposing unit, a distance measuring position detected, the surface and the substrate table Menma another semiconductor die being adsorbed by the collet along the descent direction of the collet with the other semiconductor die surface each the distance by the distance measuring position, the surface and the substrate table Menma another semiconductor die adsorbed on the collet by calculating the minimum surface distance between the other semiconductor die surface, which from a minimum level distance Bump height and groups Saitama another from the surface of the semiconductor die that is adsorbed to the TMG be lowered distance collet obtained by subtracting the height of the bump from the surface of another semiconductor die, it is also preferable.

本発明のダイマウント方法は、金属ナノ粒子を有機溶剤中に混合させた金属ナノインクを用いて電極上にバンプが形成された半導体ダイを、金属ナノインクを用いて電極上にバンプが形成された基板または金属ナノインクを用いて電極上にバンプが形成された他の半導体ダイの上にフェースダウンして半導体ダイを基板または他の半導体ダイに重ね合わせるダイマウント方法であって、基板または他の半導体ダイのバンプ側に配置された第１の距離センサとコレットに吸着された半導体ダイのバンプ側に配置された第２の距離センサとの間に配置され、基板表面または各半導体ダイの表面に沿った方向に伸びるリファレンス部材の第１の距離センサ側の面と第１の距離センサとの間のコレット降下方向に沿った第１の距離と、基板のバンプ側表面または他の半導体ダイのバンプ側表面と第１の距離センサとの間のコレット降下方向に沿った第２の距離とを第１の距離センサによって取得し、第１の距離と第２の距離の差として第１の距離差を検出し、リファレンス部材の第２の距離センサ側の面と第２の距離センサとの間のコレット降下方向に沿った第３の距離と、コレットに吸着された半導体ダイのバンプ側の表面と第２の距離センサとの間のコレット降下方向に沿った第４の距離とを第２の距離センサによって取得し、第３の距離と第４の距離との差として第２の距離差を検出し、第１の距離差と第２の距離差の和からリファレンス部材のコレット降下方向に沿った厚さを差し引いて基板または他の半導体ダイに向かって降下するコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った距離を取得する距離取得工程と、距離取得工程によって取得した距離に応じてコレットに吸着されている半導体ダイのバンプ先端が基板または他の半導体ダイのバンプ先端の直上に来るまでコレットを基板または他の半導体ダイに向かって降下させた後、コレットの半導体ダイの吸着を開放して半導体ダイのバンプを基板または他の半導体ダイのバンプに重ね合わせる重ね合わせ工程と、を有することを特徴とする。 In the die mounting method of the present invention, a semiconductor die in which bumps are formed on electrodes using metal nanoinks in which metal nanoparticles are mixed in an organic solvent is used as a base on which bumps are formed on electrodes using metal nanoinks. Saitama other is a die mounting method of superimposing the other semiconductor die based Saitama another semiconductor die by face-down on top of the other semiconductor die bumps are formed on the electrode by using a metal nano ink, groups Saitama other is disposed between the second distance sensor which is arranged on the bump side of the semiconductor die adsorbed to the first distance sensor and the collet arranged on the bump side of the other semiconductor die, the substrate table Menma other a first distance along the collet descent direction between the first distance sensor side surface and a first distance sensor reference member extending in a direction along the surface of the semiconductor die, the substrate Bump side Menma other acquires a second distance along the collet descent direction between the bump side surface of another semiconductor die first distance sensor by a first distance sensor, the first distance and the second The first distance difference is detected as the difference in distance between the second distance sensor and the third distance along the collet lowering direction between the second distance sensor side surface of the reference member and the collet. A fourth distance along the collet descending direction between the bump-side surface of the formed semiconductor die and the second distance sensor is obtained by the second distance sensor, and the third distance and the fourth distance are obtained. and a difference detecting a second distance difference, a first distance difference and thickness obtained by subtracting by groups Saitama other along the sum of the second distance difference collet descent direction of the reference member to the other semiconductor die The surface of the semiconductor die adsorbed by the collet descending Bumps of the semiconductor die plate table Menma other adsorbed by the collet according to the distance obtained and the distance obtaining step of obtaining a distance along the descent direction of the collet with the other semiconductor die surface, the distance obtaining step after tip which groups Saitama others collet the group Saitama other until immediately above the top end of the bump of another semiconductor die is lowered toward the other semiconductor die, the semiconductor die to release the adsorption of the semiconductor die collet the bump groups Saitama other and having a superposition process of superimposing the bump of another semiconductor die, the.

本発明のダイマウント方法において、重ね合わせ工程は、距離取得工程によって取得したコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面との距離からコレットに吸着されている半導体ダイのバンプ高さと基板または他の半導体ダイのバンプの高さとを差し引いた距離だけコレットを降下させること、としても好適であるし、距離取得工程は、コレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った距離を複数取得し、重ね合わせ工程は、距離取得工程によって取得したコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面との複数の距離の内の最も小さい距離からコレットに吸着されている半導体ダイの表面からのバンプ高さと基板または各半導体ダイの表面からのバンプの高さとを差し引いた距離だけコレットを降下させること、としても好適である。 A die mounting method of the present invention, superimposing step, the surface and the substrate table Menma another semiconductor die adsorbed on the acquired collet by the distance obtaining step is adsorbed from the distance between the other semiconductor die surface collet and the bump height and groups Saitama another semiconductor die are lowering the collet distance obtained by subtracting the height of the bump of another semiconductor die, also to be suitable as the distance acquisition step, adsorbed on the collet surface and the substrate table Menma other semiconductor die are the plurality acquires distance along the descent direction of the collet with the other semiconductor die surface, superimposing step is adsorbed in the acquired collet by distance obtaining step or the surface of the semiconductor die surface and the substrate table Menma another semiconductor die being adsorbed from the smallest distance among the plurality of distances between the other semiconductor die surface collet Bump height and groups Saitama other is that lowering distance collet obtained by subtracting the height of the bump from the surface of the semiconductor die, is also suitable as.

本発明のダイマウント方法において、コレットに吸着されている半導体ダイの表面の距離測定を行う位置と基板表面または他の半導体ダイの表面の距離測定を行う位置とを検出する距離測定位置検出工程を有し、距離取得工程は、コレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った距離をそれぞれ少なくとも３つ取得し、重ね合わせ工程は、検出した距離測定位置と、コレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った各距離測定位置での距離と、によってコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面との間の最小面間距離を算出し、最小面間距離からコレットに吸着されている半導体ダイの表面からのバンプ高さと基板または他の半導体ダイの表面からのバンプの高さとを差し引いた距離だけコレットを降下させること、としても好適である。
A die mounting method of the present invention, the distance measuring position location and the substrate table Menma other to perform distance measurement of the surface of the semiconductor die that is adsorbed on a collet to detect the position for the distance measurement of the surface of another semiconductor die has a detecting step, distance obtaining step, the surface and the substrate table Menma other semiconductor die are adsorbed by the collet at least three respective distances along the descent direction of the collet with the other semiconductor die surface acquisition and, superimposing step includes a distance measuring position detected, the surface and the substrate table Menma another semiconductor die adsorbed on the collet each distance measuring position along the descent direction of the collet with the other semiconductor die surface the surface and the substrate table Menma another semiconductor die being adsorbed by the collet to calculate the minimum surface distance between the other semiconductor die surface distance and by at adsorption from the minimum surface distance between the collet Bump height and groups Saitama another from the surface of the semiconductor die being able to lower the distance collet obtained by subtracting the height of the bump from the surface of another semiconductor die, it is also preferable.

本発明は、金属ナノインクを用いて形成したバンプ同士を重ね合わせる際のバンプの潰れを抑制することができるという効果を奏する。   The present invention has an effect that it is possible to suppress the collapse of the bumps when the bumps formed using the metal nano ink are overlapped with each other.

以下、本発明の好適な実施形態について図面を参照しながら説明する。図１に示すように、本実施形態のダイマウント装置１０は、Ｘ方向に水平に伸びるヘッドガイド１１と、ヘッドガイド１１に滑動自在に取り付けられたマウンティングヘッド１２と、マウンティングヘッド１２に取り付けられ、半導体ダイ２１を吸着するコレット１３と、ヘッドガイド１１と直交するＹ方向に向かって水平に伸びたトレイガイド１５と、トレイガイド１５に滑動自在に取り付けられ、半導体ダイ２１を保持するトレイ１６と、トレイ１６の側面に取り付けられ、Ｘ方向に水平に伸びたリファレンス部材１７と、ヘッドガイド１１と直交するＹ方向に向かって水平に伸びるガイドレール１８と、ガイドレール１８の間に設けられ、そのマウンティングヘッド１２側の面に基板３１を吸着固定するマウンティングステージ１９と、マウンティングヘッド１２に取り付けられた第１の距離センサである上部距離センサ１４と、上部距離センサ１４とリファレンス部材１７を挟んで反対側に取り付けられた第２の距離センサである下部距離センサ２０と、コレット１３の降下を制御する制御部７０とを備えている。下部距離センサ２０はダイマウント装置１０の図示しないベースに取り付けられている。図１において、上下方向はＺ方向である。   Preferred embodiments of the present invention will be described below with reference to the drawings. As shown in FIG. 1, the die mount apparatus 10 of the present embodiment includes a head guide 11 that extends horizontally in the X direction, a mounting head 12 that is slidably attached to the head guide 11, and a mounting head 12. A collet 13 for adsorbing the semiconductor die 21, a tray guide 15 extending horizontally in the Y direction orthogonal to the head guide 11, a tray 16 slidably attached to the tray guide 15 and holding the semiconductor die 21, A reference member 17 that is attached to the side surface of the tray 16 and extends horizontally in the X direction, a guide rail 18 that extends horizontally in the Y direction perpendicular to the head guide 11, and a guide rail 18, and the mounting thereof A mounting stage 19 for adsorbing and fixing the substrate 31 to the surface on the head 12 side; An upper distance sensor 14 which is a first distance sensor attached to the mounting head 12, and a lower distance sensor 20 which is a second distance sensor attached on the opposite side across the upper distance sensor 14 and the reference member 17, And a control unit 70 that controls the lowering of the collet 13. The lower distance sensor 20 is attached to a base (not shown) of the die mount apparatus 10. In FIG. 1, the vertical direction is the Z direction.

マウンティングヘッド１２は、ヘッドガイド１１にガイドされ、コレット１３がトレイ１６に保持された半導体ダイ２１を吸着してピックアップするピックアップ位置と、ピックアップした半導体ダイ２１を基板３１に重ね合わせる重ね合わせ位置との間を移動することができるよう構成されている。コレット１３は、マウンティングヘッド１２の内部に取り付けられた駆動機構によってマウンティングステージ１９の表面に吸着された基板３１に対して接離する方向であるＺ方向に降下できるよう構成されている。マウンティングステージ１９に吸着された基板３１と、リファレンス部材１７とは同一の方向である水平方向、或いはＸＹ方向に伸びている。トレイガイド１５はトレイ１６をトレイガイド１５に沿った方向に搬送する搬送機構を備えている。上部、下部の各距離センサ１４，２０は光学式の距離センサである。また、リファレンス部材１７は厚さが一定の平板である。   The mounting head 12 is guided by the head guide 11, and a pickup position where the collet 13 picks up and picks up the semiconductor die 21 held on the tray 16 and an overlapping position where the picked-up semiconductor die 21 is superimposed on the substrate 31. It is configured to be able to move between. The collet 13 is configured so that it can be lowered in the Z direction, which is a direction in which it contacts and separates from the substrate 31 adsorbed on the surface of the mounting stage 19 by a drive mechanism attached to the inside of the mounting head 12. The substrate 31 adsorbed by the mounting stage 19 and the reference member 17 extend in the same direction, the horizontal direction or the XY direction. The tray guide 15 includes a transport mechanism that transports the tray 16 in a direction along the tray guide 15. The upper and lower distance sensors 14 and 20 are optical distance sensors. The reference member 17 is a flat plate having a constant thickness.

マウンティングヘッド１２と、上部距離センサ１４と、下部距離センサ２０と、トレイガイド１５と、マウンティングステージ１９とは制御部７０に接続され、制御部７０の指令によって駆動されるよう構成されている。制御部７０は、内部のＣＰＵとメモリを備えるコンピュータである。   The mounting head 12, the upper distance sensor 14, the lower distance sensor 20, the tray guide 15, and the mounting stage 19 are connected to the control unit 70 and are configured to be driven by commands from the control unit 70. The control unit 70 is a computer including an internal CPU and a memory.

以上のように構成されたダイマウント装置１０によって半導体ダイ２１を基板３１の上に重ね合わせる動作について説明する。ダイマウント装置１０の動作について説明する前に、半導体ダイ２１、基板３１の電極上への金属ナノインクによるバンプの形成について説明する。   An operation of superposing the semiconductor die 21 on the substrate 31 by the die mount apparatus 10 configured as described above will be described. Before describing the operation of the die mount apparatus 10, the formation of bumps with metal nano-ink on the electrodes of the semiconductor die 21 and the substrate 31 will be described.

図２（ａ）に示すように、半導体ダイ２１の電極２２上へのバンプ２３の形成は、ダイマウント装置１０とは別途に設けられたバンプ形成機構において、金属ナノインクの微液滴４１を射出へッド４０から電極２２に向かって射出することによって行う。金属ナノインクは、その表面に金属ナノ粒子が分散状態を保持することができる分散剤をコーティングした被覆金属ナノ粒子を有機溶剤の中に分散させたものである。金属ナノ粒子を構成する微細化した導電性金属としては、金、銀、銅、白金、パラジウム、ニッケル、アルミニウムなどを用いることができる。   As shown in FIG. 2A, the bumps 23 are formed on the electrodes 22 of the semiconductor die 21 by ejecting fine droplets 41 of the metal nano ink by a bump forming mechanism provided separately from the die mount apparatus 10. This is performed by ejecting from the head 40 toward the electrode 22. The metal nano ink is obtained by dispersing coated metal nanoparticles coated with a dispersing agent capable of maintaining a dispersed state of metal nanoparticles on the surface thereof in an organic solvent. Gold, silver, copper, platinum, palladium, nickel, aluminum, or the like can be used as the finely conductive metal constituting the metal nanoparticles.

図２（ｂ）に示すように射出へッド４０から最初に電極２２に射出された金属ナノインクの微液滴４１は、電極２２の上に薄い膜状に広がる。次の金属ナノインクの微液滴４１は、電極２２の上に広がった金属ナノインクの膜の上に付着するので、電極２２の表面に直接付着する最初の微液滴よりもその広がりが少なく、電極２２の表面に若干盛り上がりを形成する。その次の金属ナノインクの微液滴４１は先の２つの微液滴４１よりも更に広がりが少なくなり、次第に盛り上がりが大きくなってくる。このように、金属ナノインクの微液滴４１を電極２２の上に順次射出していくと、次第に盛り上がりが大きくなり、何回かの射出によって、図２（ｂ）に示すように、上に行くほど傾斜の大きく先細りの円錐形のバンプ２３が形成される。バンプ２３の電極２２表面からの高さはＨ1である。図２（ｂ）に示すように、基板３１の電極３２の上にバンプ３３を形成する場合も同様である。 As shown in FIG. 2B, the metal nano-ink fine droplets 41 first ejected from the ejection head 40 to the electrode 22 spread on the electrode 22 in a thin film shape. The next metal nano-ink droplet 41 adheres to the metal nano-ink film spread on the electrode 22, and therefore has less spread than the first droplet directly deposited on the surface of the electrode 22. A slight bulge is formed on the surface of 22. The next micro droplet 41 of the metal nano ink is further less spread than the previous two micro droplets 41, and the swell gradually increases. In this way, when the metal nano-ink fine droplets 41 are sequentially ejected onto the electrode 22, the swell gradually increases, and as shown in FIG. Thus, the tapered cone bump 23 having a large slope is formed. The height of the bump 23 from the surface of the electrode 22 is H 1 . The same applies when the bumps 33 are formed on the electrodes 32 of the substrate 31 as shown in FIG.

図３（ａ）に示すように、バンプ２３の形成された半導体ダイ２１は、バンプ２３が形成された側の面２４が下側となるように反転されてトレイ１６の保持部１６ａに置かれる。保持部１６ａは、半導体ダイ２１のバンプ２３が接触しないようトレイ１６の底面に開けられた孔で、孔の周縁にバンプ２３が形成された側の面２４の周囲を支持する段部が設けられ、コレット１３側はコレット１３が半導体ダイ２１の吸着側面２５を吸着しやすいよう上に向かってテーパー状に広がっている。半導体ダイ２１が保持部１６ａに保持されたトレイ１６はダイマウント装置１０にセットされる。また、バンプ３３の形成が終了した基板３１もダイマウント装置１０にセットされる。   As shown in FIG. 3A, the semiconductor die 21 on which the bumps 23 are formed is inverted and placed on the holding portion 16a of the tray 16 so that the surface 24 on the side on which the bumps 23 are formed is on the lower side. . The holding portion 16a is a hole formed in the bottom surface of the tray 16 so that the bumps 23 of the semiconductor die 21 do not come into contact with each other, and a step portion is provided around the hole to support the periphery of the surface 24 on which the bumps 23 are formed. The collet 13 is tapered upward so that the collet 13 can easily attract the suction side surface 25 of the semiconductor die 21. The tray 16 in which the semiconductor die 21 is held by the holding unit 16 a is set in the die mount apparatus 10. Further, the substrate 31 on which the bump 33 has been formed is also set in the die mount apparatus 10.

トレイ１６と基板３１とがそれぞれ所定の位置にセットされたら、制御部７０はダイマウント装置１０を始動する。ダイマウント装置１０の制御部７０は、トレイガイド１５によってトレイ１６を所定の位置まで搬送する指令を出力する。図１に示すように、この指令によってトレイガイド１５は搬送機構を始動させ、トレイ１６に設けられたリファレンス部材１７が下部距離センサ２０の上に位置する所定の位置までトレイ１６を搬送する。また、制御部７０は基板３１を送り出す指令を図示しない基板３１の送り装置に出力する。この指令によって送り出し装置は基板３１をマウンティングステージ１９の上まで送り出す。そして、基板３１がマウンティングステージ１９の上まで搬送されたら制御部７０はマウンティングステージ１９の内部を真空にする指令を出力する。図３（ｂ）に示すようにこの指令によってマウンティングステージ１９の内部が真空にされ、基板３１はバンプ３３が上向きとなるようにマウンティングステージ１９の表面に吸着される。   When the tray 16 and the substrate 31 are set at predetermined positions, the control unit 70 starts the die mount apparatus 10. The control unit 70 of the die mount apparatus 10 outputs a command for transporting the tray 16 to a predetermined position by the tray guide 15. As shown in FIG. 1, the tray guide 15 starts the transport mechanism in response to this command, and transports the tray 16 to a predetermined position where the reference member 17 provided on the tray 16 is positioned above the lower distance sensor 20. Further, the control unit 70 outputs a command for feeding the substrate 31 to a feeding device for the substrate 31 (not shown). In response to this command, the sending device sends the substrate 31 to the top of the mounting stage 19. Then, when the substrate 31 is transferred onto the mounting stage 19, the control unit 70 outputs a command for evacuating the inside of the mounting stage 19. As shown in FIG. 3B, the inside of the mounting stage 19 is evacuated by this command, and the substrate 31 is attracted to the surface of the mounting stage 19 with the bumps 33 facing upward.

図４に示すように、制御部７０は、コレット１３に半導体ダイ２１を吸着する指令を出力する。この指令によって、マウンティングヘッド１２の駆動機構が始動し、コレット１３を半導体ダイ２１に向かって降下させる。そして、コレット１３が半導体ダイ２１に接したら、コレット１３の表面に設けられた吸着孔を真空としてコレット１３に半導体ダイ２１が吸着される。   As shown in FIG. 4, the control unit 70 outputs a command for attracting the semiconductor die 21 to the collet 13. By this command, the driving mechanism of the mounting head 12 is started, and the collet 13 is lowered toward the semiconductor die 21. When the collet 13 comes into contact with the semiconductor die 21, the semiconductor die 21 is adsorbed to the collet 13 with the suction holes provided on the surface of the collet 13 being evacuated.

図５に示すように、コレット１３が半導体ダイ２１を吸着したら、制御部７０は、マウンティングヘッド１２をリファレンス部材１７の上に上部距離センサ１４が来る第１ポジションに移動させる指令を出力する。この指令によってマウンティングヘッド１２の駆動機構が始動し、マウンティングヘッド１２をヘッドガイド１１に沿ってＸ方向に移動させ、マウンティングヘッド１２が第１ポジションまで移動したら、マウンティングヘッド１２のＸ方向の移動を停止する。そして、制御部７０は、上部距離センサ１４とリファレンス部材１７の上部距離センサ１４側の上面１７ａとの間のＺ方向の距離Ｌ1を上部距離センサ１４から取得し、メモリに格納する。また、制御部７０は、下部距離センサ２０とリファレンス部材１７の下部距離センサ２０側の下面１７ｂとの間のＺ方向の距離Ｌ3を下部距離センサ２０から取得し、メモリに格納する。 As shown in FIG. 5, when the collet 13 attracts the semiconductor die 21, the control unit 70 outputs a command to move the mounting head 12 to the first position where the upper distance sensor 14 comes on the reference member 17. By this command, the drive mechanism of the mounting head 12 is started, the mounting head 12 is moved in the X direction along the head guide 11, and when the mounting head 12 moves to the first position, the movement of the mounting head 12 in the X direction is stopped. To do. Then, the control unit 70 obtains the Z-direction distance L 1 between the upper distance sensor 14 and the upper distance sensor 14 side of the upper surface 17a of the reference member 17 from the upper distance sensor 14 and stored in the memory. Further, the control unit 70 acquires the distance L 3 in the Z direction between the lower distance sensor 20 and the lower surface 17b of the reference member 17 on the lower distance sensor 20 side from the lower distance sensor 20, and stores it in the memory.

図６に示すように、制御部７０は、マウンティングヘッド１２をコレット１３が吸着している半導体ダイ２１のバンプ２３が形成された側の面２４が下部距離センサ２０の上に来る第２ポジションに移動させる指令を出力する。この指令によってマウンティングヘッド１２の駆動機構が始動し、マウンティングヘッド１２をヘッドガイド１１に沿ってＸ方向に移動させ、マウンティングヘッド１２が第２ポジションまで移動したら、マウンティングヘッド１２のＸ方向の移動を停止する。また、制御部７０は、トレイ１６に取り付けられているリファレンス部材１７が下部距離センサ２０の上面から外れる退避位置までトレイ１６を移動させる指令を出力する。この指令によってトレイガイド１５の搬送機構が始動し、トレイ１６を退避位置まで移動させる。退避位置ではトレイ１６に取り付けられているリファレンス部材１７は下部距離センサ２０の距離測定経路に無いので、下部距離センサ２０はリファレンス部材１７の上面１７ａ側にある半導体ダイ２１のバンプ２３が形成された側の面２４とのＺ方向の距離を測定することができるようになる。マウンティングヘッド１２が第２ポジションに移動し、トレイ１６が退避位置に移動すると、制御部７０は、下部距離センサ２０とコレット１３に吸着された半導体ダイ２１のバンプ２３が形成された側の面２４との間のＺ方向の距離Ｌ4を下部距離センサ２０から取得し、メモリに格納する。 As shown in FIG. 6, the control unit 70 moves the mounting head 12 to the second position where the surface 24 on the side where the bump 23 of the semiconductor die 21 on which the collet 13 is attracted is located above the lower distance sensor 20. A command to move is output. By this command, the drive mechanism of the mounting head 12 is started, the mounting head 12 is moved in the X direction along the head guide 11, and when the mounting head 12 moves to the second position, the movement of the mounting head 12 in the X direction is stopped. To do. In addition, the control unit 70 outputs a command to move the tray 16 to a retreat position where the reference member 17 attached to the tray 16 is disengaged from the upper surface of the lower distance sensor 20. By this command, the transport mechanism of the tray guide 15 is started, and the tray 16 is moved to the retracted position. Since the reference member 17 attached to the tray 16 is not in the distance measurement path of the lower distance sensor 20 at the retracted position, the lower distance sensor 20 has the bumps 23 of the semiconductor die 21 on the upper surface 17a side of the reference member 17 formed. The distance in the Z direction with respect to the side surface 24 can be measured. When the mounting head 12 is moved to the second position and the tray 16 is moved to the retracted position, the control unit 70 has the surface 24 on the side on which the bumps 23 of the semiconductor die 21 adsorbed by the lower distance sensor 20 and the collet 13 are formed. the Z-direction distance L 4 between the acquired from the lower distance sensor 20 and stored in the memory.

図７に示すように、制御部７０は、マウンティングヘッド１２を基板３１の上に上部距離センサ１４が来る第３ポジションに移動させる指令を出力する。この指令によってマウンティングヘッド１２の駆動機構が始動し、マウンティングヘッド１２をヘッドガイド１１に沿ってＸ方向に移動させ、マウンティングヘッド１２が第３ポジションまで移動したら、マウンティングヘッド１２のＸ方向の移動を停止する。そして、制御部７０は、上部距離センサ１４と基板３１のバンプ３３が形成された側の面３４との間のＺ方向の距離Ｌ2を上部距離センサ１４から取得し、メモリに格納する。 As shown in FIG. 7, the control unit 70 outputs a command to move the mounting head 12 to the third position where the upper distance sensor 14 comes on the substrate 31. By this command, the drive mechanism of the mounting head 12 is started, the mounting head 12 is moved in the X direction along the head guide 11, and when the mounting head 12 moves to the third position, the movement of the mounting head 12 in the X direction is stopped. To do. Then, the control unit 70 obtains the Z-direction distance L 2 between the upper distance sensor 14 and the side surface 34 on which the bumps 33 are formed in the substrate 31 from the upper distance sensor 14 and stored in the memory.

図８に示すように、制御部７０は、メモリに格納したＺ方向の距離Ｌ1から距離Ｌ4を読み出し、Ｚ方向の距離Ｌ2からＬ1を差し引いてＺ方向の第１の距離差ΔＬ1を計算する。また、制御部７０は、取得したＺ方向の距離Ｌ4からＬ3を差し引いてＺ方向の第２の距離差ΔＬ2を計算する。図８に示すように、第２の距離差ΔＬ2は、コレット１３に吸着された半導体ダイ２１のバンプ２３が形成された側の面２４とリファレンス部材１７の下面１７ｂとのＺ方向の距離となる。そして、制御部７０は、第１の距離差ΔＬ1と、第２の距離差ΔＬ2とを加え、その合計からリファレンス部材１７の厚さｔを差し引くことによって、コレット１３に吸着された半導体ダイ２１のバンプ２３が形成された側の面２４と基板３１のバンプ３３が形成された側の面３４との間のＺ方向の距離Ｌ5を取得し、メモリに格納する。 As shown in FIG. 8, the control unit 70 reads the distance L 4 from the distance L 1 in the Z direction stored in the memory, and subtracts L 1 from the distance L 2 in the Z direction to obtain the first distance difference ΔL in the Z direction. Calculate 1 In addition, the control unit 70 calculates the second distance difference ΔL 2 in the Z direction by subtracting L 3 from the acquired distance L 4 in the Z direction. As shown in FIG. 8, the second distance difference ΔL 2 is the distance in the Z direction between the surface 24 on which the bump 23 of the semiconductor die 21 adsorbed to the collet 13 is formed and the lower surface 17 b of the reference member 17. Become. Then, the control unit 70 adds the first distance difference ΔL 1 and the second distance difference ΔL 2, and subtracts the thickness t of the reference member 17 from the total, thereby obtaining the semiconductor die adsorbed on the collet 13. The distance L 5 in the Z direction between the surface 24 on the side where the bumps 23 are formed and the surface 34 on the side where the bumps 33 of the substrate 31 are formed is acquired and stored in the memory.

図９（ａ）に示すように、制御部７０は、上下二視野カメラ４２を基板３１とコレット１３に吸着された半導体ダイ２１との間に進出させ、半導体ダイ２１と基板３１の各電極２２，３２のＸＹ方向の位置を合わせる。そして、制御部７０は、コレット１３を基板に向かってＺ方向に降下させる降下高さＤを計算する。   As shown in FIG. 9A, the control unit 70 advances the two-field camera 42 between the substrate 31 and the semiconductor die 21 adsorbed on the collet 13, and each electrode 22 on the semiconductor die 21 and the substrate 31. , 32 are aligned in the XY direction. Then, the control unit 70 calculates a lowering height D that lowers the collet 13 toward the substrate in the Z direction.

図９（ｂ）に示すように、降下高さＤは、半導体ダイ２１のバンプ２３が形成された側の面２４と基板３１のバンプ３３が形成された側の面３４とのＺ方向の距離Ｌ5から半導体ダイ２１のバンプ２３が形成された側の面２４からのバンプ高さＨ2と基板３１のバンプ３３が形成された側の面３４からのバンプ高さＨ3との合計高さを差し引いたものである。各バンプ２３，３３の各バンプ高さＨ2，Ｈ3に形成の際の製造誤差などによるバラツキがある場合には、最大の各バンプ高さＨ2，Ｈ3の合計を差し引く。そして、制御部７０は、コレット１３を降下高さＤだけ降下させる指令を出力する。この指令によってマウンティングヘッド１２の駆動機構が始動し、コレット１３を降下高さＤだけ基板３１に向かってＺ方向に降下させ、降下高さＤだけコレット１３が降下するとコレット１３の降下を停止させる。 As shown in FIG. 9B, the descending height D is the distance in the Z direction between the surface 24 of the semiconductor die 21 on which the bumps 23 are formed and the surface 34 of the substrate 31 on which the bumps 33 are formed. The total height of the bump height H 2 from the surface 24 on which the bump 23 of the semiconductor die 21 is formed from L 5 and the bump height H 3 from the surface 34 on the side of the substrate 31 on which the bump 33 is formed. Is subtracted. If the bump heights H 2 and H 3 of the bumps 23 and 33 vary due to manufacturing errors during the formation, the total of the maximum bump heights H 2 and H 3 is subtracted. Then, the control unit 70 outputs a command to lower the collet 13 by the lowering height D. By this command, the driving mechanism of the mounting head 12 is started, the collet 13 is lowered in the Z direction toward the substrate 31 by the lowering height D, and when the collet 13 is lowered by the lowering height D, the lowering of the collet 13 is stopped.

図９（ｂ）に示すように、コレット１３が降下高さＤだけ降下すると、半導体ダイ２１のバンプ２３の先端は基板３１のバンプ３３の先端の直上となっている。各バンプ２３，３３のバンプ高さＨ2，Ｈ3にバラツキがある場合には、各バンプ２３，３３の間にはバラツキに基づく微小な隙間δができる。ほとんどの場合、各バンプ２３，３３のバンプ高さＨ2，Ｈ3にはバラツキがあり、半導体ダイ２１の一番高いバンプ２３と基板３１の一番高いバンプ３３とが対向することはないので、各バンプ２３，３３の先端はほとんど接触せず、隙間δはゼロより大きくなっている。また、コレット１３が降下した後の半導体ダイ２１のバンプ２３が形成された側の面２４と基板３１のバンプ３３が形成された側の面３４との高さはＨ0となっている。 As shown in FIG. 9B, when the collet 13 descends by the descending height D, the tips of the bumps 23 of the semiconductor die 21 are directly above the tips of the bumps 33 of the substrate 31. When the bump heights H 2 and H 3 of the bumps 23 and 33 are varied, a minute gap δ is formed between the bumps 23 and 33 based on the variation. In most cases, the bump heights H 2 and H 3 of the bumps 23 and 33 vary, and the highest bump 23 of the semiconductor die 21 and the highest bump 33 of the substrate 31 do not face each other. The tips of the bumps 23 and 33 are hardly in contact with each other, and the gap δ is larger than zero. Further, the height of the surface 24 of the semiconductor die 21 on which the bumps 23 are formed after the collet 13 is lowered and the surface 34 of the substrate 31 on which the bumps 33 are formed is H 0 .

図９（ｃ）に示すように、制御部７０は、コレット１３の吸着孔の真空を開放する指令を出力する。この指令によってコレット１３の吸着孔の真空が開放され、コレット１３に吸着されていた半導体ダイ２１は自重によって基板３１の上に降下する。すると、半導体ダイ２１のバンプ２３と基板３１のバンプ３３とが接触し、液相の各バンプ２３，３３とは一体となって接合バンプ２６を形成する。接合バンプ２６は半導体ダイ２１の自重を支持している。   As shown in FIG. 9C, the control unit 70 outputs a command for opening the vacuum of the suction holes of the collet 13. By this command, the vacuum of the suction holes of the collet 13 is released, and the semiconductor die 21 adsorbed on the collet 13 falls onto the substrate 31 by its own weight. Then, the bumps 23 of the semiconductor die 21 and the bumps 33 of the substrate 31 come into contact with each other, and the bumps 23 and 33 in the liquid phase are integrated to form the bonding bumps 26. The bonding bumps 26 support the weight of the semiconductor die 21.

以上説明したように、本実施形態のダイマウント装置１０は、コレット１３に吸着した半導体ダイ２１を基板３１の上にマウントする前に、半導体ダイ２１のバンプ２３が形成された側の面２４と基板３１のバンプ３３が形成された側の面３４とのＺ方向の距離Ｌ5を計測しておき、半導体ダイ２１のバンプ２３先端が基板３１のバンプ３３の先端の直上に来るまで半導体ダイ２１を基板３１に接近させてから、半導体ダイ２１を基板３１の上に重ね合わせるので、各バンプ２３，３３にほとんど押圧力を掛けずに半導体ダイ２１を基板３１の上に重ね合わせることができ、重ね合わせの際に各バンプ２３，３３が潰れることを抑制することができるという効果を奏する。また、本実施形態では、ダイマウント装置１０のベースに固定された下部距離センサ２０とマウンティングヘッド１２に固定された上部距離センサ１４とを用いてコレット１３に吸着された半導体ダイ２１のバンプ２３が形成された側の面２４と基板３１のバンプ３３が形成された側の面３４とのＺ方向の距離Ｌ5を測定しているので、コレット１３に吸着された半導体ダイ２１と基板と３１との間に可動式の距離センサを進出させてＺ方向の距離Ｌ5を測定するよりも精度良くＺ方向の距離Ｌ5を測定することができる。このため、コレット１３をより精度よく降下させることができ、コレット１３を降下させた後の各バンプ２３，３３の隙間δをより小さくすることができ、半導体ダイ２１を基板３１に重ねる際によりゆっくりと半導体ダイ２１を基板３１に降下させることができ、重ね合わせの際に各バンプ２３，３３が潰れることを抑制することができるという効果を奏する。 As described above, the die mounting apparatus 10 according to the present embodiment has the surface 24 on the side on which the bumps 23 of the semiconductor die 21 are formed before mounting the semiconductor die 21 adsorbed on the collet 13 on the substrate 31. A distance L 5 in the Z direction from the surface 34 on which the bumps 33 of the substrate 31 are formed is measured, and the semiconductor die 21 is kept until the tip of the bump 23 of the semiconductor die 21 is directly above the tip of the bump 33 of the substrate 31. Since the semiconductor die 21 is superposed on the substrate 31 after being brought close to the substrate 31, the semiconductor die 21 can be superposed on the substrate 31 with almost no pressing force applied to the bumps 23 and 33. There is an effect that the bumps 23 and 33 can be prevented from being crushed during superposition. In the present embodiment, the bumps 23 of the semiconductor die 21 adsorbed on the collet 13 using the lower distance sensor 20 fixed to the base of the die mount apparatus 10 and the upper distance sensor 14 fixed to the mounting head 12 are formed. Since the distance L 5 in the Z direction between the formed surface 24 and the surface 34 of the substrate 31 on which the bumps 33 are formed is measured, the semiconductor die 21 adsorbed on the collet 13, the substrate 31 and It is possible to measure the distance L 5 in the Z direction with higher accuracy than measuring the distance L 5 in the Z direction by moving a movable distance sensor between them. For this reason, the collet 13 can be lowered more accurately, the gap δ between the bumps 23 and 33 after the collet 13 is lowered can be made smaller, and more slowly when the semiconductor die 21 is stacked on the substrate 31. As a result, the semiconductor die 21 can be lowered to the substrate 31 and the bumps 23 and 33 can be prevented from being crushed during the superposition.

図１０から図１２を参照しながら他の実施形態について説明する。図１から図９を参照して説明した実施形態と同様の部分には同様の符号を付して説明を省略する。   Another embodiment will be described with reference to FIGS. 10 to 12. Parts similar to those of the embodiment described with reference to FIGS. 1 to 9 are denoted by the same reference numerals, and description thereof is omitted.

図１０（ａ）、図１０（ｂ）に示すように、制御部７０は、マウンティングヘッド１２をコレット１３が吸着している半導体ダイ２１のバンプ２３が形成された側の面２４の中心よりも少しずれた位置が下部距離センサ２０の上に来る第２ａポジションに移動させる指令を出力する。この指令によってマウンティングヘッド１２の駆動機構が始動し、マウンティングヘッド１２をヘッドガイド１１に沿ってＸ方向に移動させ、マウンティングヘッド１２が第２ａポジションまで移動したら、マウンティングヘッド１２のＸ方向の移動を停止する。また、制御部７０は、トレイ１６を退避位置まで移動させる。そして、制御部７０は、下部距離センサ２０とコレット１３に吸着された半導体ダイ２１のバンプ２３が形成された側の面２４にある距離測定位置２７ａとの間のＺ方向の距離Ｌ4aを下部距離センサ２０から取得し、メモリに格納する。Ｚ方向の距離Ｌ4aの取得が終了したら、制御部７０は、下部距離センサ２０が距離測定位置２７ａよりもＸ方向に少しずれた位置にある距離測定位置２７ｂの距離を測定することができる第２ｂポジションまでマウンティングヘッド１２をＸ方向に移動させる。そして、制御部７０は、下部距離センサ２０とコレット１３に吸着された半導体ダイ２１のバンプ２３が形成された側の面２４にある距離測定位置２７ｂとの間のＺ方向の距離Ｌ4bを下部距離センサ２０から取得し、メモリに格納する。 As shown in FIG. 10A and FIG. 10B, the control unit 70 controls the mounting head 12 from the center of the surface 24 on the side where the bumps 23 of the semiconductor die 21 on which the collet 13 is adsorbed are formed. A command to move to the 2a position where the slightly shifted position is above the lower distance sensor 20 is output. By this command, the drive mechanism of the mounting head 12 is started, the mounting head 12 is moved in the X direction along the head guide 11, and when the mounting head 12 moves to the 2a position, the movement of the mounting head 12 in the X direction is stopped. To do. Further, the control unit 70 moves the tray 16 to the retracted position. Then, the control unit 70 lowers the distance L 4a in the Z direction between the lower distance sensor 20 and the distance measurement position 27a on the surface 24 on the side where the bumps 23 of the semiconductor die 21 adsorbed to the collet 13 are formed. Obtained from the distance sensor 20 and stored in the memory. When the acquisition of the distance L 4a in the Z direction is completed, the control unit 70 can measure the distance of the distance measurement position 27b at which the lower distance sensor 20 is slightly shifted in the X direction from the distance measurement position 27a. The mounting head 12 is moved in the X direction to the 2b position. Then, the control unit 70 reduces the distance L 4b in the Z direction between the lower distance sensor 20 and the distance measurement position 27b on the surface 24 on the side where the bumps 23 of the semiconductor die 21 adsorbed to the collet 13 are formed. Obtained from the distance sensor 20 and stored in the memory.

図１１（ａ）、図１１（ｂ）に示すように、制御部７０は、マウンティングヘッド１２を基板３１の上に上部距離センサ１４が来る第３ａポジションに移動させ、上部距離センサ１４と基板３１のバンプ３３が形成された側の面３４にある距離測定位置３７ａとの間のＺ方向の距離Ｌ2aを上部距離センサ１４から取得し、メモリに格納する。距離Ｌ2aの取得が終了したら、制御部７０は、上部距離センサ１４が距離測定位置３７ａよりもＸ方向に少しずれた位置にある距離測定位置３７ｂの距離を測定することができる第３ｂポジションまでマウンティングヘッド１２をＸ方向に移動させる。そして、制御部７０は、上部距離センサ１４と基板３１のバンプ３３が形成された側の面３４にある距離測定位置３７ｂとの間のＺ方向の距離Ｌ2bを上部距離センサ１４から取得し、メモリに格納する。 As shown in FIGS. 11A and 11B, the control unit 70 moves the mounting head 12 to the 3a position where the upper distance sensor 14 comes on the substrate 31, and the upper distance sensor 14 and the substrate 31 are moved. The distance L 2a in the Z direction from the distance measurement position 37a on the surface 34 on the side where the bump 33 is formed is obtained from the upper distance sensor 14 and stored in the memory. When the acquisition of the distance L 2a is completed, the control unit 70 reaches the third position b where the upper distance sensor 14 can measure the distance of the distance measurement position 37b at a position slightly shifted in the X direction from the distance measurement position 37a. The mounting head 12 is moved in the X direction. And the control part 70 acquires the distance L2b of the Z direction between the upper distance sensor 14 and the distance measurement position 37b in the surface 34 by which the bump 33 of the board | substrate 31 was formed from the upper distance sensor 14, Store in memory.

制御部７０は、取得したＺ方向の距離Ｌ4aとＬ4bとの内の小さい方をＺ方向の距離Ｌ4としてメモリに格納し、取得したＺ方向の距離Ｌ2aとＬ2bとの内の小さい方をＺ方向の距離Ｌ2としてメモリに格納し、先に説明した実施形態と同様、第１の距離差ΔＬ1と第２の距離差ΔＬ2を計算し、第１の距離差ΔＬ1と、第２の距離差ΔＬ2とを加え、その合計からリファレンス部材１７の厚さｔを差し引くことによって、コレット１３に吸着された半導体ダイ２１のバンプ２３が形成された側の面２４と基板３１のバンプ３３が形成された側の面３４との間のＺ方向の距離Ｌ6を取得し、メモリに格納する。Ｚ方向の距離Ｌ6は、上部距離センサ１４と下部距離センサ２０とによって取得したコレット１３に吸着されている半導体ダイ２１のバンプ２３が形成された側の面２４と基板３１のバンプ３３が形成された側の面３４と複数の距離の内の最も小さいＺ方向の距離である。 The control unit 70 stores the smaller one of the acquired distances L 4a and L 4b in the Z direction in the memory as the distance L 4 in the Z direction, and stores the distance between the acquired distances L 2a and L 2b in the Z direction. The smaller one is stored in the memory as the distance L 2 in the Z direction, and the first distance difference ΔL 1 and the second distance difference ΔL 2 are calculated and the first distance difference ΔL 1 as in the embodiment described above. And the second distance difference ΔL 2, and the thickness t of the reference member 17 is subtracted from the total thereof, whereby the surface 24 on the side on which the bumps 23 of the semiconductor die 21 adsorbed to the collet 13 are formed and the substrate The distance L 6 in the Z direction between the surface 31 on which the bump 33 is formed and the Z direction is obtained and stored in the memory. The distance L 6 in the Z direction is formed by the surface 24 on the side where the bumps 23 of the semiconductor die 21 adsorbed by the collet 13 obtained by the upper distance sensor 14 and the lower distance sensor 20 and the bumps 33 of the substrate 31 are formed. The distance in the Z direction is the smallest of a plurality of distances from the surface 34 on the side.

そして、図１２に示すように、制御部７０は、半導体ダイ２１のバンプ２３が形成された側の面２４と基板３１のバンプ３３が形成された側の面３４との間のＺ方向の距離Ｌ6から半導体ダイ２１のバンプ２３が形成された側の面２４からのバンプ高さＨ2と基板３１のバンプ３３が形成された側の面３４からのバンプ高さＨ3との合計高さを差し引いてＺ方向の降下高さＤを計算し、降下高さＤだけコレット１３を降下させ、半導体ダイ２１を基板３１に重ね合わせる。すると、図９（ｃ）に示すように、半導体ダイ２１のバンプ２３と基板３１のバンプ３３とが接触し、液相の各バンプ２３，３３とは一体となって接合バンプ２６を形成する。 Then, as shown in FIG. 12, the controller 70 determines the distance in the Z direction between the surface 24 of the semiconductor die 21 on which the bumps 23 are formed and the surface 34 of the substrate 31 on which the bumps 33 are formed. The total height of the bump height H 2 from the surface 24 on which the bump 23 of the semiconductor die 21 is formed from L 6 and the bump height H 3 from the surface 34 on the side of the substrate 31 on which the bump 33 is formed. Is subtracted to calculate the descending height D in the Z direction, the collet 13 is lowered by the descending height D, and the semiconductor die 21 is superimposed on the substrate 31. Then, as shown in FIG. 9C, the bumps 23 of the semiconductor die 21 and the bumps 33 of the substrate 31 come into contact with each other, and the bumps 23 and 33 in the liquid phase are integrated to form the bonding bumps 26.

本実施形態は、上部距離センサ１４と下部距離センサ２０とによって取得したコレット１３に吸着されている半導体ダイ２１のバンプ２３が形成された側の面２４と基板３１のバンプ３３が形成された側の面３４との複数のＺ方向の距離の内の最も小さいＺ方向の距離であるＬ6に基づいてコレット１３の降下高さＤを算出しているので、図１２に示すように、コレット１３に吸着された半導体ダイ２１と基板３１との間に傾斜がある場合でも、一番接近しているバンプ２３，３３を潰すことなく半導体ダイ２１を基板３１の上に重ね合わせることができるという効果を奏する。 In the present embodiment, the surface 24 on which the bumps 23 of the semiconductor die 21 adsorbed by the collet 13 acquired by the upper distance sensor 14 and the lower distance sensor 20 are formed and the side on which the bumps 33 of the substrate 31 are formed. Since the descending height D of the collet 13 is calculated on the basis of L 6 which is the smallest Z-direction distance among the plurality of Z-direction distances to the surface 34, as shown in FIG. Even when there is an inclination between the semiconductor die 21 adsorbed on the substrate 31 and the substrate 31, the semiconductor die 21 can be superimposed on the substrate 31 without crushing the bumps 23 and 33 that are closest to each other. Play.

図１０から図１２を参照して他の実施形態について説明する。先に説明した実施形態と同様の部分には同様の符号を付して説明は省略する。   Another embodiment will be described with reference to FIGS. 10 to 12. Parts similar to those of the above-described embodiment are denoted by the same reference numerals and description thereof is omitted.

図１０（ａ）、図１０（ｃ）に示すように、本実施形態のダイマウント装置１０のコレット１３は、半導体ダイ２１を吸着した状態で回転することができるよう構成されている。   As shown in FIGS. 10A and 10C, the collet 13 of the die mount apparatus 10 of the present embodiment is configured to be able to rotate while the semiconductor die 21 is adsorbed.

制御部７０は、先に説明した実施形態と同様、マウンティングヘッド１２をコレット１３が吸着している半導体ダイ２１のバンプ２３が形成された側の面２４の中心よりも少しずれた位置が下部距離センサ２０の上に来る第２ａポジションに移動させ、トレイ１６を退避位置まで移動させる。そして、制御部７０は、下部距離センサ２０とコレット１３に吸着された半導体ダイ２１のバンプ２３が形成された側の面２４にある距離測定位置２７ａと下部距離センサ２０との間のＺ方向の距離Ｌ4aを下部距離センサ２０から取得し、メモリに格納する。また、制御部７０は、マウンティングヘッド１２のＸＹ方向の位置と、下部距離センサ２０の位置とから距離測定位置２７ａのＸＹ方向の座標位置を取得する。Ｚ方向の距離Ｌ4aと距離測定位置２７ａの座標位置の取得が終了したら、制御部７０は、コレット１３を例えば４５度回転させ、距離測定位置２７ａを含む円弧２８の上にある距離測定位置２７ｂが下部距離センサ２０の上に来るようにする。そして、制御部７０は、距離測定位置２７ｂと下部距離センサ２０との間のＺ方向の距離Ｌ4bを下部距離センサ２０から取得し、メモリに格納する。また、制御部７０は、マウンティングヘッド１２のＸＹ方向の位置と、コレット１３の回転角度と、下部距離センサ２０の位置とから距離測定位置２７ｂのＸＹ方向の座標位置を取得する。Ｚ方向の距離Ｌ4bと距離測定位置２７ｂの座標位置の取得が終了したら、制御部７０は、コレット１３を更に４５度回転させ、距離測定位置２７ａを含む円弧２８の上にある距離測定位置２７ｃが下部距離センサ２０の上に来るようにする。そして、制御部７０は、距離測定位置２７ｃと下部距離センサ２０との間のＺ方向の距離Ｌ4cを下部距離センサ２０から取得し、メモリに格納する。また、制御部７０は、マウンティングヘッド１２のＸＹ方向の位置と、コレット１３の回転角度と、下部距離センサ２０の位置とから距離測定位置２７ｃのＸＹ方向の座標位置を取得する。図１０（ｄ）に示すように、各距離測定位置２７ａ，２７ｂ，２７ｃは、半導体ダイ２１のバンプ２３が形成された側の面２４の上で一直線上にない位置となっている。 As in the above-described embodiment, the control unit 70 is located at a position where the mounting head 12 is slightly displaced from the center of the surface 24 on the side where the bump 23 of the semiconductor die 21 on which the collet 13 is attracted is formed. The tray 16 is moved to the retracted position by moving to the second position a that comes above the sensor 20. And the control part 70 of the Z direction between the distance measurement position 27a and the lower distance sensor 20 in the surface 24 in the side in which the bump 23 of the semiconductor die 21 attracted | sucked by the lower distance sensor 20 and the collet 13 was formed. The distance L 4a is acquired from the lower distance sensor 20 and stored in the memory. In addition, the control unit 70 acquires the coordinate position in the XY direction of the distance measurement position 27 a from the position in the XY direction of the mounting head 12 and the position of the lower distance sensor 20. When the acquisition of the coordinate position of the distance L 4a in the Z direction and the distance measurement position 27a is completed, the control unit 70 rotates the collet 13 by 45 degrees, for example, and the distance measurement position 27b on the arc 28 including the distance measurement position 27a. Is placed on the lower distance sensor 20. And the control part 70 acquires the distance L4b of the Z direction between the distance measurement position 27b and the lower distance sensor 20 from the lower distance sensor 20, and stores it in memory. In addition, the control unit 70 acquires the coordinate position in the XY direction of the distance measurement position 27b from the position in the XY direction of the mounting head 12, the rotation angle of the collet 13, and the position of the lower distance sensor 20. When the acquisition of the coordinate positions of the distance L 4b in the Z direction and the distance measurement position 27b is completed, the control unit 70 further rotates the collet 13 by 45 degrees, and the distance measurement position 27c on the arc 28 including the distance measurement position 27a. Is placed on the lower distance sensor 20. And the control part 70 acquires distance L4c of the Z direction between the distance measurement position 27c and the lower distance sensor 20 from the lower distance sensor 20, and stores it in memory. In addition, the control unit 70 acquires the coordinate position in the XY direction of the distance measurement position 27 c from the position in the XY direction of the mounting head 12, the rotation angle of the collet 13, and the position of the lower distance sensor 20. As shown in FIG. 10D, the distance measurement positions 27a, 27b, and 27c are positions that are not in a straight line on the surface 24 of the semiconductor die 21 on which the bumps 23 are formed.

図１１（ａ）、図１１（ｃ）に示すように、制御部７０は、マウンティングヘッド１２を基板３１の上に上部距離センサ１４が来る第３ａポジションに移動させ、上部距離センサ１４と基板３１のバンプ３３が形成された側の面３４にある距離測定位置３７ａとの間のＺ方向の距離Ｌ2aを上部距離センサ１４から取得し、メモリに格納する。また、制御部７０は、マウンティングヘッド１２のＸＹ方向の位置から距離測定位置３７ａのＸＹ方向の座標位置を取得する。Ｚ方向の距離Ｌ2aの取得と距離測定位置３７ａのＸＹ方向の座標位置の取得が終了したら、制御部７０は、上部距離センサ１４が距離測定位置３７ａよりもＸ方向に少しずれた位置にある距離測定位置３７ｂの距離を測定することができる第３ｂポジションまでマウンティングヘッド１２をＸ方向に移動させる。そして、制御部７０は、上部距離センサ１４と基板３１のバンプ３３が形成された側の面３４にある距離測定位置３７ｂとの間のＺ方向の距離Ｌ2bを上部距離センサ１４から取得し、メモリに格納する。また、制御部７０は、マウンティングヘッド１２のＸＹ方向の位置から距離測定位置３７ｂのＸＹ方向の座標位置を取得する。Ｚ方向の距離Ｌ2bの取得と距離測定位置３７ｂのＸＹ方向の座標位置の取得が終了したら、制御部７０は、上部距離センサ１４が距離測定位置３７ｂよりもＹ方向に少しずれた位置にある距離測定位置３７ｃの距離を測定することができるよう、図１１（ｃ）に示すように、基板３１をＹ方向に移動させる。そして、制御部７０は、上部距離センサ１４と基板３１のバンプ３３が形成された側の面３４にある距離測定位置３７ｃとの間のＺ方向の距離Ｌ2cを上部距離センサ１４から取得し、メモリに格納する。また、制御部７０は、マウンティングヘッド１２のＸＹ方向の位置と基板３１のＹ方向位置とから距離測定位置３７ｃのＸＹ方向の座標位置を取得する。図１１（ｄ）に示すように、各距離測定位置３７ａ，３７ｂ，３７ｃは、基板３１のバンプ３３が形成された側の面３４の上で一直線上にない位置となっている。 As shown in FIGS. 11A and 11C, the control unit 70 moves the mounting head 12 to the third position where the upper distance sensor 14 comes on the substrate 31, so that the upper distance sensor 14 and the substrate 31 are moved. The distance L 2a in the Z direction from the distance measurement position 37a on the surface 34 on the side where the bump 33 is formed is obtained from the upper distance sensor 14 and stored in the memory. Further, the control unit 70 acquires the coordinate position of the distance measurement position 37a in the XY direction from the position of the mounting head 12 in the XY direction. When the acquisition of the distance L 2a in the Z direction and the acquisition of the coordinate position in the XY direction of the distance measurement position 37a is completed, the control unit 70 is at a position where the upper distance sensor 14 is slightly shifted in the X direction from the distance measurement position 37a. The mounting head 12 is moved in the X direction to a third position b where the distance measurement position 37b can be measured. And the control part 70 acquires the distance L2b of the Z direction between the upper distance sensor 14 and the distance measurement position 37b in the surface 34 by which the bump 33 of the board | substrate 31 was formed from the upper distance sensor 14, Store in memory. Further, the control unit 70 acquires the coordinate position of the distance measurement position 37b in the XY direction from the position of the mounting head 12 in the XY direction. When the acquisition of the distance L 2b in the Z direction and the acquisition of the coordinate position in the XY direction of the distance measurement position 37b are completed, the control unit 70 is at a position where the upper distance sensor 14 is slightly shifted in the Y direction from the distance measurement position 37b. As shown in FIG. 11C, the substrate 31 is moved in the Y direction so that the distance at the distance measurement position 37c can be measured. Then, the control unit 70 obtains the upper distance sensor 14 and the Z-direction distance L 2c between the distance measurement position 37c on the side surface 34 on which the bumps 33 are formed in the substrate 31 from the upper distance sensor 14, Store in memory. Further, the control unit 70 acquires the coordinate position in the XY direction of the distance measurement position 37 c from the position in the XY direction of the mounting head 12 and the Y direction position of the substrate 31. As shown in FIG. 11D, the distance measurement positions 37a, 37b, and 37c are positions that are not in a straight line on the surface 34 of the substrate 31 on which the bumps 33 are formed.

制御部７０は、取得した各距離測定位置３７ａ，３７ｂ，３７ｃのＸＹ方向の位置とＺ方向の距離Ｌ2a，Ｌ2b，Ｌ2cとから基板３１のバンプ３３が形成された側の面３４のＸＹ面に対する傾斜角度、方向を計算し、バンプ３３が形成された側の面３４の中で一番上部距離センサ１４に近くなっている位置を計算し、基板３１のバンプ３３が形成された側の面３４と上部距離センサ１４との間のＺ方向の最小距離Ｌ2’を算出し、Ｚ方向の距離Ｌ2’からＬ1を差し引いてＺ方向の第１の距離差ΔＬ1を計算する。また、制御部７０は、取得した各距離測定位置２７ａ，２７ｂ，２７ｃのＸＹ方向の位置とＺ方向の距離Ｌ4a，Ｌ4b，Ｌ4cとからコレット１３に吸着された半導体ダイ２１のバンプ２３が形成された側の面２４のＸＹ面に対する傾斜角度、方向を計算し、バンプ２３が形成された側の面２４の中で一番下部距離センサ２０に近くなっている位置を計算し、コレット１３に吸着された半導体ダイ２１のバンプ２３が形成された側の面２４と下部距離センサ２０との間のＺ方向の最小距離Ｌ4’を算出し、Ｚ方向の距離Ｌ4’からＬ3を差し引いてＺ方向の第２の距離差ΔＬ2を計算する。そして、制御部７０は、第１の距離差ΔＬ1と、第２の距離差ΔＬ2とを加え、その合計からリファレンス部材１７の厚さｔを差し引くことによって、コレット１３に吸着された半導体ダイ２１のバンプ２３が形成された側の面２４と基板３１のバンプ３３が形成された側の面３４との間のＺ方向の最小面間距離Ｌ7を取得し、メモリに格納する。 The controller 70 determines the surface 34 on the side where the bumps 33 of the substrate 31 are formed from the acquired positions in the XY direction of the distance measurement positions 37a, 37b and 37c and the distances L 2a , L 2b and L 2c in the Z direction. The inclination angle and direction with respect to the XY plane are calculated, the position closest to the uppermost distance sensor 14 in the surface 34 on the side where the bumps 33 are formed is calculated, and the side on which the bumps 33 of the substrate 31 are formed The minimum distance L 2 ′ in the Z direction between the surface 34 and the upper distance sensor 14 is calculated, and the first distance difference ΔL 1 in the Z direction is calculated by subtracting L 1 from the distance L 2 ′ in the Z direction. . Further, the control unit 70 uses the acquired distance measurement positions 27a, 27b, and 27c in the XY direction and the distances L 4a , L 4b , and L 4c in the Z direction to bumps 23 of the semiconductor die 21 attracted to the collet 13. The inclination angle and direction of the surface 24 on the side where the bumps 23 are formed with respect to the XY plane are calculated, the position on the side 24 where the bumps 23 are formed is closest to the lowermost distance sensor 20, and the collet is calculated. The minimum distance L 4 ′ in the Z direction between the surface 24 on which the bump 23 of the semiconductor die 21 adsorbed on the side 13 is formed and the lower distance sensor 20 is calculated, and the distance L 4 ′ from the distance L 4 ′ in the Z direction is calculated as L 3. Is subtracted to calculate the second distance difference ΔL 2 in the Z direction. Then, the control unit 70 adds the first distance difference ΔL 1 and the second distance difference ΔL 2, and subtracts the thickness t of the reference member 17 from the total, thereby obtaining the semiconductor die adsorbed on the collet 13. The minimum inter-surface distance L 7 in the Z direction between the surface 24 on the side where the bumps 23 are formed and the surface 34 on the side where the bumps 33 of the substrate 31 are formed is acquired and stored in the memory.

そして、図１２に示すように、制御部７０は、半導体ダイ２１のバンプ２３が形成された側の面２４と基板３１のバンプ３３が形成された側の面３４との間のＺ方向の最小面間距離Ｌ7から半導体ダイ２１のバンプ２３が形成された側の面２４からのバンプ高さＨ2と基板３１のバンプ３３が形成された側の面３４からのバンプ高さＨ3との合計高さを差し引いてＺ方向の降下高さＤを計算し、降下高さＤだけコレット１３を降下させ、半導体ダイ２１を基板３１に重ね合わせる。 Then, as shown in FIG. 12, the control unit 70 is the minimum in the Z direction between the surface 24 of the semiconductor die 21 where the bumps 23 are formed and the surface 34 of the substrate 31 where the bumps 33 are formed. The bump height H 2 from the surface 24 on the side where the bump 23 of the semiconductor die 21 is formed and the bump height H 3 from the surface 34 on the side where the bump 33 of the substrate 31 is formed from the inter-surface distance L 7 . The total height is subtracted to calculate the descending height D in the Z direction, the collet 13 is lowered by the descending height D, and the semiconductor die 21 is overlaid on the substrate 31.

本実施形態は、上部距離センサ１４と下部距離センサ２０とによって取得したコレット１３に吸着されている半導体ダイ２１のバンプ２３が形成された側の面２４と基板３１のバンプ３３が形成された側の面３４との間のＺ方向の最小面間距離Ｌ7に基づいてコレット１３のＺ方向の降下高さＤを算出しているので、図１２に示すように、コレット１３に吸着された半導体ダイ２１と基板３１との間に傾斜がある場合でも、一番接近しているバンプ２３，３３を潰すことなく半導体ダイ２１を基板３１の上に重ね合わせることができるという効果を奏する。 In the present embodiment, the surface 24 on which the bumps 23 of the semiconductor die 21 adsorbed by the collet 13 acquired by the upper distance sensor 14 and the lower distance sensor 20 are formed and the side on which the bumps 33 of the substrate 31 are formed. Since the descending height D of the collet 13 in the Z direction is calculated on the basis of the minimum inter-plane distance L 7 in the Z direction with respect to the surface 34, the semiconductor adsorbed on the collet 13 as shown in FIG. Even when there is an inclination between the die 21 and the substrate 31, the semiconductor die 21 can be superimposed on the substrate 31 without crushing the bumps 23 and 33 that are closest to each other.

以上説明した各実施形態は、半導体ダイ２１を基板３１の上に重ね合わせることとして説明したが、図１３に示すように、本発明は、コレット１３に吸着された半導体ダイ５１を他の半導体ダイ６１の上に重ね合わせる場合にも適用することができる。   In each of the embodiments described above, the semiconductor die 21 is superposed on the substrate 31. However, as shown in FIG. 13, the present invention relates to the semiconductor die 51 adsorbed on the collet 13 as another semiconductor die. It can also be applied to the case of superimposing on 61.

図１３に示す半導体ダイ６１は貫通電極６２を備えており、先に説明した実施形態による方法によって基板３１の上に重ね合わされ、その後、焼結によって貫通電極６２の基板側と基板３１の電極３２との間に接合金属層５６が形成されているものである。そして、半導体ダイ６１の基板と反対側にある貫通電極６２の上に先の実施形態で説明したと同様、金属ナノインクを用いたバンプ６３が形成されている。また、コレット１３に吸着されている半導体ダイ５１の電極５２の上にも金属ナノインクによってバンプ５３が形成されている。   A semiconductor die 61 shown in FIG. 13 includes a through electrode 62 and is superimposed on the substrate 31 by the method according to the above-described embodiment, and thereafter, the substrate side of the through electrode 62 and the electrode 32 of the substrate 31 are sintered. The bonding metal layer 56 is formed between the two. A bump 63 using metal nano ink is formed on the through electrode 62 on the opposite side of the substrate of the semiconductor die 61 as described in the previous embodiment. Also, bumps 53 are formed by metal nano ink on the electrodes 52 of the semiconductor die 51 adsorbed by the collet 13.

制御部７０は先に説明した実施形態と同様に、上部距離センサ１４と下部距離センサ２０とによって、上部距離センサ１４とリファレンス部材１７の上部距離センサ１４側の上面１７ａとの間のＺ方向の距離Ｌ1と、上部距離センサ１４と半導体ダイ６１のバンプ６３が形成された側の面６４との間のＺ方向の距離Ｌ2と、下部距離センサ２０とリファレンス部材１７の下部距離センサ２０側の下面１７ｂとの距離Ｌ3と、下部距離センサ２０とコレット１３に吸着された半導体ダイ５１のバンプ５３が形成された側の面５４との間のＺ方向の距離Ｌ4とを、取得してメモリに格納する。そして、制御部７０は、Ｚ方向の距離Ｌ2からＬ1を差し引いてＺ方向の第１の距離差ΔＬ1を計算し、Ｚ方向の距離Ｌ4からＬ3を差し引いてＺ方向の第２の距離差ΔＬ2を計算し、第１の距離差ΔＬ1と、第２の距離差ΔＬ2とを加え、その合計からリファレンス部材１７の厚さｔを差し引くことによって、図１３（ａ）に示すように、コレット１３に吸着された半導体ダイ５１のバンプ５３が形成された側の面５４と半導体ダイ６１のバンプ６３が形成された側の面６４との間のＺ方向の距離Ｌ5を取得し、メモリに格納する。 Similarly to the embodiment described above, the control unit 70 uses the upper distance sensor 14 and the lower distance sensor 20 in the Z direction between the upper distance sensor 14 and the upper surface 17a of the reference member 17 on the upper distance sensor 14 side. The distance L 1 , the distance L 2 in the Z direction between the upper distance sensor 14 and the surface 64 on which the bump 63 of the semiconductor die 61 is formed, the lower distance sensor 20 and the lower distance sensor 20 side of the reference member 17 and the distance L 3 between the lower surface 17b, and a Z-direction distance L 4 between the lower distance sensor 20 and the side surface 54 on which the bumps 53 are formed in the collet 13 semiconductor die 51 adsorbed to acquire Stored in memory. Then, the control unit 70 calculates the first distance difference ΔL 1 in the Z direction by subtracting L 1 from the distance L 2 in the Z direction, and subtracts L 3 from the distance L 4 in the Z direction to calculate the second distance in the Z direction. The distance difference ΔL 2 is calculated, the first distance difference ΔL 1 and the second distance difference ΔL 2 are added, and the thickness t of the reference member 17 is subtracted from the total, thereby obtaining the result shown in FIG. As shown, the distance L 5 in the Z direction between the surface 54 of the semiconductor die 51 adsorbed by the collet 13 on the side where the bumps 53 are formed and the surface 64 of the semiconductor die 61 on which the bumps 63 are formed is shown. Acquire and store in memory.

制御部７０は、図１３（ｂ）に示すように、半導体ダイ５１のバンプ５３が形成された側の面５４と半導体ダイ６１のバンプ６３が形成された側の面６４との間のＺ方向の距離Ｌ5から半導体ダイ５１のバンプ５３が形成された側の面５４からのバンプ高さＨ2と半導体ダイ６１のバンプ６３が形成された側の面６４からのバンプ高さＨ3との合計高さを差し引いてＺ方向の降下高さＤを計算し、コレット１３を降下高さＤだけ基板３１に向かって降下させる。そして、制御部７０は図１３（ｃ）に示すように、コレット１３の真空を開放し、半導体ダイ５１を半導体ダイ６１の上に降下させて重ね合わせる。すると、半導体ダイ５１のバンプ５３と半導体ダイ６１のバンプ６３とが接触し、液相の各バンプ５３，６３とは一体となって接合バンプ５５を形成する。 As shown in FIG. 13 (b), the control unit 70 is arranged in the Z direction between the surface 54 of the semiconductor die 51 where the bumps 53 are formed and the surface 64 of the semiconductor die 61 where the bumps 63 are formed. From the distance L 5, the bump height H 2 from the surface 54 of the semiconductor die 51 on which the bump 53 is formed and the bump height H 3 from the surface 64 of the semiconductor die 61 on which the bump 63 is formed are The total height is subtracted to calculate the descending height D in the Z direction, and the collet 13 is lowered toward the substrate 31 by the descending height D. Then, as shown in FIG. 13C, the control unit 70 releases the vacuum of the collet 13 and lowers the semiconductor die 51 on the semiconductor die 61 so as to overlap each other. Then, the bumps 53 of the semiconductor die 51 and the bumps 63 of the semiconductor die 61 come into contact with each other, and the bumps 53 and 63 in the liquid phase are integrated to form a bonding bump 55.

本実施形態は先に説明した各実施形態と同様の効果を奏する。   This embodiment has the same effects as the previously described embodiments.

本発明の実施形態におけるダイマウント装置の構成を示す斜視図である。It is a perspective view which shows the structure of the die mount apparatus in embodiment of this invention. 金属ナノインクによって半導体ダイおよび基板の電極上へのバンプ形成を示す説明図である。It is explanatory drawing which shows bump formation on the electrode of a semiconductor die and a board | substrate with metal nano ink. バンプが形成された半導体ダイをトレイに保持させた状態と、バンプが形成された基板をマウンティングステージに吸着させた状態を示す説明図である。It is explanatory drawing which shows the state which hold | maintained the semiconductor die in which the bump was formed in the tray, and the state in which the board | substrate with which the bump was formed was made to adsorb | suck to the mounting stage. 本発明の実施形態におけるダイマウント装置の動作の内、半導体ダイのピックアップを示す説明図である。It is explanatory drawing which shows the pick-up of a semiconductor die among operation | movement of the die mounting apparatus in embodiment of this invention. 本発明の実施形態におけるダイマウント装置の動作の内、上部距離センサと下部距離センサによるリファレンス部材の上面と下面の距離の測定を示す説明図である。It is explanatory drawing which shows the measurement of the distance of the upper surface and lower surface of a reference member by an upper distance sensor and a lower distance sensor among operation | movement of the die-mount apparatus in embodiment of this invention. 本発明の実施形態におけるダイマウント装置の動作の内、下部距離センサによる半導体ダイの距離の測定を示す説明図である。It is explanatory drawing which shows the measurement of the distance of the semiconductor die by a lower distance sensor among operation | movement of the die-mount apparatus in embodiment of this invention. 本発明の実施形態におけるダイマウント装置の動作の内、上部距離センサによる基板の距離の測定を示す説明図である。It is explanatory drawing which shows the measurement of the distance of the board | substrate by an upper distance sensor among operation | movement of the die-mount apparatus in embodiment of this invention. 本発明の実施形態におけるダイマウント装置の動作において、取得した各距離の関係と距離差を示す説明図である。In operation | movement of the die-mount apparatus in embodiment of this invention, it is explanatory drawing which shows the relationship and distance difference of each acquired distance. 本発明の実施形態におけるダイマウント装置の動作において、半導体ダイを基板に重ね合わせる動作を示す説明図である。It is explanatory drawing which shows the operation | movement which superimposes a semiconductor die on a board | substrate in operation | movement of the die-mount apparatus in embodiment of this invention. 本発明の他の実施形態におけるダイマウント装置の動作の内、下部距離センサによる半導体ダイの距離の測定を示す説明図である。It is explanatory drawing which shows the measurement of the distance of the semiconductor die by a lower distance sensor among operation | movement of the die-mount apparatus in other embodiment of this invention. 本発明の他の実施形態におけるダイマウント装置の動作の内、上部距離センサによる基板の距離の測定を示す説明図である。It is explanatory drawing which shows the measurement of the distance of the board | substrate by an upper distance sensor among operation | movement of the die-mount apparatus in other embodiment of this invention. 本発明の他の実施形態におけるダイマウント装置の動作において、相対的に傾斜した半導体ダイと基板との関係を示す説明図である。It is explanatory drawing which shows the relationship between the semiconductor die and board | substrate which inclined relatively in operation | movement of the die-mount apparatus in other embodiment of this invention. 本発明の他の実施形態におけるダイマウント装置の動作において、半導体ダイを他の半導体ダイに重ね合わせる動作を示す説明図である。It is explanatory drawing which shows the operation | movement which superimposes a semiconductor die on another semiconductor die in operation | movement of the die-mount apparatus in other embodiment of this invention.

符号の説明Explanation of symbols

１０ ダイマウント装置、１１ ヘッドガイド、１２ マウンティングヘッド、１３ コレット、１４ 上部距離センサ、１５ トレイガイド、１６ トレイ、１６ａ 保持部、１７ リファレンス部材、１７ａ 上面、１７ｂ 下面、１８ ガイドレール、１９ マウンティングステージ、２０ 下部距離センサ、２１，５１，６１ 半導体ダイ、２２，３２，５２ 電極、２３，３３，５３，６３ バンプ、２４，３４，５４，６４ 面、２５ 吸着側面、２６，５５ 接合バンプ、２７ａ，２７ｂ，２７ｃ，３７ａ，３７ｂ，３７ｃ 距離測定位置、２８ 円弧、３１ 基板、４０ 射出ヘッド、４１ 微液滴、４２ 上下二視野カメラ、５６ 接合金属層、６２ 貫通電極、７０ 制御部、Ｄ 降下高さ、Ｈ0，Ｈ1 高さ、Ｈ2，Ｈ3 バンプ高さ、Ｌ1〜Ｌ4，Ｌ2a，Ｌ2b，Ｌ2c，Ｌ4a，Ｌ4b，Ｌ4c，Ｌ5，Ｌ6 距離、Ｌ2’，Ｌ4’ 最小距離、Ｌ7 最小面間距離、δ 隙間、ΔＬ1，ΔＬ2 距離差。 DESCRIPTION OF SYMBOLS 10 Die mounting apparatus, 11 Head guide, 12 Mounting head, 13 Collet, 14 Upper distance sensor, 15 Tray guide, 16 Tray, 16a Holding part, 17 Reference member, 17a Upper surface, 17b Lower surface, 18 Guide rail, 19 Mounting stage, 20 Lower distance sensor, 21, 51, 61 Semiconductor die, 22, 32, 52 Electrode, 23, 33, 53, 63 Bump, 24, 34, 54, 64 surface, 25 Adsorption side surface, 26, 55 Bond bump, 27a, 27b, 27c, 37a, 37b, 37c Distance measurement position, 28 arc, 31 substrate, 40 ejection head, 41 fine droplet, 42 top and bottom two-field camera, 56 junction metal layer, 62 penetrating electrode, 70 control unit, D descending height H 0 , H 1 height, H 2 , H 3 bump height, L 1 to L 4 , L 2a , L 2b , L 2c, L 4a, L 4b, L 4c, L 5, L 6 distance, L 2 ', L 4' minimum distance, L 7 minimum level distance, [delta] clearance, ΔL 1, ΔL 2 distance difference.

Claims (8)

金属ナノ粒子を有機溶剤中に混合させた金属ナノインクを用いて電極上にバンプが形成された半導体ダイを、金属ナノインクを用いて電極上にバンプが形成された基板または金属ナノインクを用いて電極上にバンプが形成された他の半導体ダイの上にフェースダウンして半導体ダイを基板または他の半導体ダイに重ね合わせるダイマウント装置であって、
基板または他の半導体ダイのバンプ側に配置された第１の距離センサと、
コレットに吸着された半導体ダイのバンプ側に配置された第２の距離センサと、
第１の距離センサと第２の距離センサとの間に配置され、基板表面または他の半導体ダイの表面に沿った方向に伸びるリファレンス部材と、
半導体ダイを吸着して基板または他の半導体ダイに向かって降下するコレットと、コレットの降下を制御する制御部とを含み、
制御部は、
リファレンス部材の第１の距離センサ側の面と第１の距離センサとの間のコレット降下方向に沿った第１の距離と、基板のバンプ側表面または他の半導体ダイのバンプ側表面と第１の距離センサとの間のコレット降下方向に沿った第２の距離とを第１の距離センサによって取得し、第１の距離と第２の距離の差として第１の距離差を検出し、リファレンス部材の第２の距離センサ側の面と第２の距離センサとの間のコレット降下方向に沿った第３の距離と、コレットに吸着された半導体ダイのバンプ側の表面と第２の距離センサとの間のコレット降下方向に沿った第４の距離とを第２の距離センサによって取得し、第３の距離と第４の距離との差として第２の距離差を検出し、第１の距離差と第２の距離差の和からリファレンス部材のコレット降下方向に沿った厚さを差し引いてコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った距離を取得する距離取得手段と、
距離取得手段によって取得した距離に応じてコレットに吸着されている半導体ダイのバンプ先端が基板または他の半導体ダイのバンプ先端の直上に来るまでコレットを基板または他の半導体ダイに向かって降下させた後、コレットの半導体ダイの吸着を開放して半導体ダイのバンプを基板または他の半導体ダイのバンプに重ね合わせる重ね合わせ手段と、
を有することを特徴とするダイマウント装置。 A semiconductor die bumps are formed on the electrode by using a metal nano ink obtained by mixing metal nanoparticles in an organic solvent, the use of a metal nano ink bumps group Saitama other formed on the electrode by using a metal nano ink the bumps group Saitama other semiconductor die by face-down on top of the other semiconductor die formed on the electrode Te a die mount device superimposed on another semiconductor die,
Groups Saitama other a first distance sensors disposed in the bump side of the other semiconductor die,
A second distance sensor disposed on the bump side of the semiconductor die adsorbed to the collet;
Is disposed between the first distance sensor and the second distance sensor, the substrate table Menma other and the reference member extending in a direction along the surface of another semiconductor die,
Group Saitama Other adsorbs the semiconductor die includes a collet descends toward the other semiconductor die, and a control unit for controlling the descent of the collet,
The control unit
First distance and, bump-side table Menma other substrate bump side surface of the other semiconductor die along the collet descent direction between the first distance sensor side surface and a first distance sensor reference member And a second distance along the collet descending direction between the first distance sensor and the first distance sensor is obtained by the first distance sensor, and a first distance difference is detected as a difference between the first distance and the second distance. The third distance along the collet descending direction between the second distance sensor side surface of the reference member and the second distance sensor, the bump side surface of the semiconductor die adsorbed by the collet, and the second distance A fourth distance along the collet descent direction with respect to the distance sensor of the second distance sensor is acquired by the second distance sensor, and the second distance difference is detected as a difference between the third distance and the fourth distance, The collage of the reference member from the sum of the first distance difference and the second distance difference Surface and the substrate table Menma another semiconductor die adsorbed on the collet by subtracting the thickness along the descent direction and distance obtaining means for obtaining a distance along the descent direction of the collet with the other semiconductor die surface ,
Other semiconductor die to the group Saitama other collet until the top end of the bump of the semiconductor die being adsorbed groups Saitama other the collet according to the distance obtained by the distance obtaining means come just above the top end of the bump of another semiconductor die after it descends toward the, based Saitama other bumps of the semiconductor die by opening the suction of the semiconductor die collet and superimposing means for superimposing the bump of another semiconductor die,
A die mounting apparatus comprising: 請求項１に記載のダイマウント装置であって、
重ね合わせ手段は、距離取得手段によって取得したコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面との距離からコレットに吸着されている半導体ダイの表面からのバンプ高さと基板または他の半導体ダイの表面からのバンプの高さとを差し引いた距離だけコレットを降下させること、
を特徴とするダイマウント装置。 The die mounting apparatus according to claim 1,
Superimposing means, the distance the substrate table Menma other and the surface of the semiconductor die that is adsorbed to the obtained collet by the acquisition means from the surface of the semiconductor die has been adsorbed from the distance between the other semiconductor die surface collet bump height and the base Saitama others lowering the distance collet obtained by subtracting the height of the bump from the surface of another semiconductor die,
A die mounting device characterized by the above. 請求項１に記載のダイマウント装置であって、
距離取得手段は、コレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った距離を複数取得し、
重ね合わせ手段は、距離取得手段によって取得したコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面との複数の距離の内の最も小さい距離からコレットに吸着されている半導体ダイの表面からのバンプ高さと基板または他の半導体ダイの表面からのバンプの高さとを差し引いた距離だけコレットを降下させること、
を特徴とするダイマウント装置。 The die mounting apparatus according to claim 1,
Distance obtaining means, the surface and the substrate table Menma another semiconductor die being adsorbed on collet plurality acquires distance along the descent direction of the collet with the other semiconductor die surface,
Superimposing means is adsorbed from the smallest distance among the plurality of distances between the acquired surface of the semiconductor die that is adsorbed on the collet and the substrate table surface or other semiconductor die surface to the collet by the distance obtaining means it bump height and groups Saitama another from the surface of the semiconductor die to lower the distance collet obtained by subtracting the height of the bump from the surface of another semiconductor die,
A die mounting device characterized by the above. 請求項１に記載のダイマウント装置であって、
制御部は、
コレットに吸着されている半導体ダイの表面の距離測定を行う位置と基板表面または他の半導体ダイの表面の距離測定を行う位置とを検出する距離測定位置検出手段を備え、
距離取得手段は、コレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った距離をそれぞれ少なくとも３つ取得し、
重ね合わせ手段は、検出した距離測定位置と、コレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った各距離測定位置での距離と、によってコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面との間の最小面間距離を算出し、最小面間距離からコレットに吸着されている半導体ダイの表面からのバンプ高さと基板または他の半導体ダイの表面からのバンプの高さとを差し引いた距離だけコレットを降下させること、
を特徴とするダイマウント装置。 The die mounting apparatus according to claim 1,
The control unit
Position and the substrate table Menma other to perform distance measurement of the surface of the semiconductor die that is adsorbed on the collet comprises a distance measuring position detecting means for detecting the position for distance measurement of the surface of another semiconductor die,
Distance obtaining means, the surface and the substrate table Menma another semiconductor die being adsorbed on collet distance along the descent direction of the collet with the other semiconductor die surface to get at least three, respectively,
Superimposing means comprises a distance measuring position detected, the surface and the substrate table Menma another semiconductor die being adsorbed on collet at each distance measurement positions along the descent direction of the collet with the other semiconductor die surface distance and, the surface and the substrate table Menma another semiconductor die adsorbed on the collet by calculating the minimum surface distance between the other semiconductor die surface, is adsorbed from the minimum surface distance between the collet it bump height and groups Saitama another from the surface of the semiconductor die to lower the distance collet obtained by subtracting the height of the bump from the surface of another semiconductor die,
A die mounting device characterized by the above. 金属ナノ粒子を有機溶剤中に混合させた金属ナノインクを用いて電極上にバンプが形成された半導体ダイを、金属ナノインクを用いて電極上にバンプが形成された基板または金属ナノインクを用いて電極上にバンプが形成された他の半導体ダイの上にフェースダウンして半導体ダイを基板または他の半導体ダイに重ね合わせるダイマウント方法であって、
基板または他の半導体ダイのバンプ側に配置された第１の距離センサとコレットに吸着された半導体ダイのバンプ側に配置された第２の距離センサとの間に配置され、基板表面または各半導体ダイの表面に沿った方向に伸びるリファレンス部材の第１の距離センサ側の面と第１の距離センサとの間のコレット降下方向に沿った第１の距離と、基板のバンプ側表面または他の半導体ダイのバンプ側表面と第１の距離センサとの間のコレット降下方向に沿った第２の距離とを第１の距離センサによって取得し、第１の距離と第２の距離の差として第１の距離差を検出し、リファレンス部材の第２の距離センサ側の面と第２の距離センサとの間のコレット降下方向に沿った第３の距離と、コレットに吸着された半導体ダイのバンプ側の表面と第２の距離センサとの間のコレット降下方向に沿った第４の距離とを第２の距離センサによって取得し、第３の距離と第４の距離との差として第２の距離差を検出し、第１の距離差と第２の距離差の和からリファレンス部材のコレット降下方向に沿った厚さを差し引いて基板または他の半導体ダイに向かって降下するコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った距離を取得する距離取得工程と、
距離取得工程によって取得した距離に応じてコレットに吸着されている半導体ダイのバンプ先端が基板または他の半導体ダイのバンプ先端の直上に来るまでコレットを基板または他の半導体ダイに向かって降下させた後、コレットの半導体ダイの吸着を開放して半導体ダイのバンプを基板または他の半導体ダイのバンプに重ね合わせる重ね合わせ工程と、
を有することを特徴とするダイマウント方法。 A semiconductor die bumps are formed on the electrode by using a metal nano ink obtained by mixing metal nanoparticles in an organic solvent, the use of a metal nano ink bumps group Saitama other formed on the electrode by using a metal nano ink a semiconductor die and face-down on top of the other semiconductor die bumps are formed on the electrode base Saitama other is a die mounting method of superimposing the other semiconductor-die,
Groups Saitama other is disposed between the second distance sensor which is arranged on the bump side of the semiconductor die adsorbed to the first distance sensor and the collet arranged on the bump side of the other semiconductor die, the substrate table Menma other a first distance along the collet descent direction between the first distance sensor side surface and a first distance sensor reference member extending in a direction along the surface of the semiconductor die, the substrate bump side table Menma other acquires a second distance along the collet descent direction between the bump side surface of another semiconductor die first distance sensor by a first distance sensor, the first distance A first distance difference as a difference between the second distance sensor and the second distance sensor side surface of the reference member and a third distance along the collet descending direction between the second distance sensor; The bump-side surface of the semiconductor die adsorbed by the collet and the second A fourth distance along the collet descent direction with respect to the separation sensor is acquired by the second distance sensor, and a second distance difference is detected as a difference between the third distance and the fourth distance; 1 of the distance difference and the base Saitama other by subtracting the thickness along the sum of the second distance difference collet descent direction of the reference member is a semiconductor die that is adsorbed on the collet descends toward the other semiconductor die surface and the substrate table Menma other a distance obtaining step of obtaining a distance along the descent direction of the collet with the other semiconductor die surface,
Other semiconductor die to the group Saitama other collet until the top end of the bump of the semiconductor die being adsorbed groups Saitama other the collet according to the distance obtained by the distance obtaining step comes directly above the top end of the bump of another semiconductor die after it descends toward the, based Saitama other bumps of the semiconductor die by opening the suction of the semiconductor die collet and overlaying step is superimposed on the bump of another semiconductor die,
A die mounting method characterized by comprising: 請求項５に記載のダイマウント方法であって、
重ね合わせ工程は、距離取得工程によって取得したコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面との距離からコレットに吸着されている半導体ダイの表面からのバンプ高さと基板または他の半導体ダイの表面からのバンプの高さとを差し引いた距離だけコレットを降下させること、
を特徴とするダイマウント方法。 The die mounting method according to claim 5, wherein
Superimposing step, the distance surface and the substrate table Menma another semiconductor die adsorbed on the acquired collet by the acquisition step from the surface of the semiconductor die has been adsorbed from the distance between the other semiconductor die surface collet bump height and the base Saitama others lowering the distance collet obtained by subtracting the height of the bump from the surface of another semiconductor die,
A die mounting method characterized by the above. 請求項５に記載のダイマウント方法であって、
距離取得工程は、コレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った距離を複数取得し、
重ね合わせ工程は、距離取得工程によって取得したコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面との複数の距離の内の最も小さい距離からコレットに吸着されている半導体ダイの表面からのバンプ高さと基板または各半導体ダイの表面からのバンプの高さとを差し引いた距離だけコレットを降下させること、
を特徴とするダイマウント方法。 The die mounting method according to claim 5, wherein
Distance obtaining step, the surface and the substrate table Menma another semiconductor die being adsorbed on collet plurality acquires distance along the descent direction of the collet with the other semiconductor die surface,
Superimposing step, the surface and the substrate table Menma another semiconductor die adsorbed on the acquired collet by the distance obtaining step is adsorbed from the smallest distance among the plurality of distances between the other semiconductor die surface collet and the bump height and groups Saitama another from the surface of the semiconductor die are possible lowering distance collet obtained by subtracting the height of the bump from the surface of the semiconductor die,
A die mounting method characterized by the above. 請求項５に記載のダイマウント方法であって、
コレットに吸着されている半導体ダイの表面の距離測定を行う位置と基板表面または他の半導体ダイの表面の距離測定を行う位置とを検出する距離測定位置検出工程を有し、
距離取得工程は、コレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った距離をそれぞれ少なくとも３つ取得し、
重ね合わせ工程は、検出した距離測定位置と、コレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面とのコレットの降下方向に沿った各距離測定位置での距離と、によってコレットに吸着されている半導体ダイの表面と基板表面または他の半導体ダイの表面との間の最小面間距離を算出し、最小面間距離からコレットに吸着されている半導体ダイの表面からのバンプ高さと基板または他の半導体ダイの表面からのバンプの高さとを差し引いた距離だけコレットを降下させること、
を特徴とするダイマウント方法。 The die mounting method according to claim 5, wherein
Position and the substrate table Menma other to perform distance measurement of the surface of the semiconductor die that is adsorbed on the collet has a distance measuring position detection step of detecting the position for distance measurement of the surface of another semiconductor die,
Distance obtaining step, the surface and the substrate table Menma another semiconductor die being adsorbed on collet distance along the descent direction of the collet with the other semiconductor die surface to get at least three, respectively,
Superimposing step includes a distance measuring position detected, the surface and the substrate table Menma another semiconductor die being adsorbed on collet at each distance measurement positions along the descent direction of the collet with the other semiconductor die surface distance and, the surface and the substrate table Menma another semiconductor die adsorbed on the collet by calculating the minimum surface distance between the other semiconductor die surface, is adsorbed from the minimum surface distance between the collet it bump height and groups Saitama another from the surface of the semiconductor die to lower the distance collet obtained by subtracting the height of the bump from the surface of another semiconductor die,
A die mounting method characterized by the above.
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