CN115101434A - Packaging structure manufacturing method and chip anti-warping device - Google Patents
Packaging structure manufacturing method and chip anti-warping device Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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Abstract
Description
技术领域technical field
本发明涉及半导体封装技术领域,尤其涉及一种封装结构制作方法和芯片防翘曲装置。The invention relates to the technical field of semiconductor packaging, in particular to a method for manufacturing a packaging structure and a device for preventing warping of a chip.
背景技术Background technique
TSV(Through Silicon Via,硅通孔技术)技术是一项高密度封装技术,正在逐渐取代目前工艺比较成熟的引线键合技术,被认为是第四代封装技术。TSV技术是在芯片和芯片之间、晶圆和晶圆之间制作垂直导通,通过铜、钨、多晶硅等导电物质的填充,实现硅通孔的垂直电气互连,可以通过垂直互连减小互连长度,减小信号延迟,降低电容/电感,实现芯片间的低功耗,高速通讯,增加宽带和实现器件集成的小型化。TSV (Through Silicon Via, through-silicon via technology) technology is a high-density packaging technology, which is gradually replacing the current wire bonding technology with a relatively mature process, and is considered to be the fourth-generation packaging technology. TSV technology is to make vertical conduction between chips and wafers, and through the filling of conductive materials such as copper, tungsten, and polysilicon to realize vertical electrical interconnection of through-silicon vias, which can be reduced by vertical interconnection. Small interconnect length, reduced signal delay, reduced capacitance/inductance, low power consumption between chips, high-speed communication, increased bandwidth and miniaturization of device integration.
而随着电子产品朝小型化方向发展,无论堆叠形式和连线方式如何改变,在封装整体厚度不变甚至有所降低的趋势下,堆叠中所用各层芯片的厚度就不可避免地需要被减薄。在3D堆叠项目中,TSV芯片厚度在100~200μm之间,相对于常规芯片,在常温或是高温环境下均会出现翘曲的问题,翘曲程度随着芯片的尺寸增加而增加。在目前常规流程下,在对TSV芯片倒装回流、及底部填充完成后,其翘曲能达到200μm以上,而在TSV芯片存在较大翘曲的情况下,再在TSV芯片上贴装芯片将很难实行,尤其当顶部芯片尺寸较小时,就很难完成芯片整体的封装。With the development of electronic products towards miniaturization, no matter how the stacking form and wiring method change, the thickness of each layer of chips used in the stacking inevitably needs to be reduced under the trend that the overall thickness of the package remains unchanged or even decreases. Thin. In the 3D stacking project, the thickness of TSV chips is between 100 and 200 μm. Compared with conventional chips, there will be warpage problems at room temperature or high temperature environment. The warpage degree increases with the increase of chip size. Under the current conventional process, after the TSV chip is flip-chip reflowed and underfilled, the warpage can reach more than 200μm, and in the case of large warpage of the TSV chip, mounting the chip on the TSV chip will It is difficult to implement, especially when the size of the top chip is small, it is difficult to complete the packaging of the whole chip.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种封装结构制作方法和芯片防翘曲装置。The purpose of the present invention is to provide a method for manufacturing a package structure and a device for preventing warping of a chip.
为实现上述发明目的之一,本发明一实施方式提供一种封装结构的制作方法,所述制作方法包括步骤:In order to achieve one of the above purposes of the invention, an embodiment of the present invention provides a manufacturing method of a package structure, the manufacturing method comprising the steps of:
提供一测试基板和测试堆叠芯片组,所述测试堆叠芯片组至少包括上部测试芯片和下部测试芯片,将所述下部测试芯片形成于所述测试基板和所述上部测试芯片之间,形成测试封装结构;A test substrate and a test stack chip set are provided, the test stack chip set includes at least an upper test chip and a lower test chip, and the lower test chip is formed between the test substrate and the upper test chip to form a test package structure;
将所述测试封装结构进行回流焊工艺;performing a reflow soldering process on the test package structure;
测试回流焊工艺后的所述上部测试芯片与所述下部测试芯片之间的焊接性能;testing the welding performance between the upper test chip and the lower test chip after the reflow soldering process;
当所述焊接性能失效时,提供一芯片防翘曲装置和与所述测试封装结构相同的产品封装结构,所述芯片防翘曲装置包括一底座、至少两个支撑件和盖板,将所述产品封装结构固定放置于所述底座上方,将所述支撑件分别放置于所述产品封装结构两侧,将所述盖板盖设于所述产品封装结构的上表面,并搭载放置于所述支撑件上;When the soldering performance fails, a chip anti-warping device and a product packaging structure identical to the test package structure are provided. The product packaging structure is fixedly placed above the base, the support members are respectively placed on both sides of the product packaging structure, the cover plate is covered on the upper surface of the product packaging structure, and is mounted on the product packaging structure. on the support;
将固定装载于所述芯片防翘曲装置内的产品封装结构进行回流焊工艺。A reflow soldering process is performed on the product packaging structure that is fixedly loaded in the chip warpage preventing device.
作为本发明一实施方式的进一步改进,所述将所述下部测试测试芯片形成于所述测试基板和所述上部测试测试芯片之间,形成测试封装结构,具体包括:As a further improvement of an embodiment of the present invention, forming the lower test chip between the test substrate and the upper test chip to form a test package structure specifically includes:
将所述下部测试测试芯片的功能面通过焊球倒装焊接于所述测试基板的上表面;Flip-chip welding the functional surface of the lower test chip to the upper surface of the test substrate through solder balls;
将所述上部测试芯片的功能面通过焊球倒装焊接于所述下部测试芯片的上表面。The functional surface of the upper test chip is flip-chip bonded to the upper surface of the lower test chip through solder balls.
作为本发明一实施方式的进一步改进,所述测试回流焊工艺后的所述封装结构中所述上部测试芯片与所述下部测试芯片之间的焊接性能,具体包括:As a further improvement of an embodiment of the present invention, the testing of the soldering performance between the upper test chip and the lower test chip in the package structure after the reflow soldering process specifically includes:
测试所述上部测试芯片与所述下部测试芯片之间的导电性能;testing the electrical conductivity between the upper test chip and the lower test chip;
利用X-Ray技术检测所述焊球的焊接质量。The soldering quality of the solder balls is inspected by X-Ray technology.
作为本发明一实施方式的进一步改进,所述提供与所述测试封装结构完全相同的产品封装结构,具体包括:As a further improvement of an embodiment of the present invention, providing the product packaging structure that is exactly the same as the test packaging structure specifically includes:
提供与所述测试基板相同的基板和与所述测试堆叠芯片组相同的堆叠芯片组,所述堆叠芯片组至少包括与所述上部测试芯片相同的上部芯片和与所述下部测试芯片相同的下部芯片;providing the same substrate as the test substrate and the same stacked chip set as the test stacked chip set, the stacked chip set including at least the same upper chip as the upper test chip and the same lower part as the lower test chip chip;
将所述下部芯片形成于所述基板和所述上部芯片之间,形成产品封装结构。The lower chip is formed between the substrate and the upper chip to form a product package structure.
作为本发明一实施方式的进一步改进,所述将所述产品封装结构固定放置于所述底座上方,具体包括:As a further improvement of an embodiment of the present invention, the fixing and placing of the product packaging structure above the base specifically includes:
所述装置还包括基板固定件,将所述基板固定件放置于所述底座上方;The device further includes a base plate fixing member, and the base plate fixing member is placed above the base;
将所述基板固定卡接在所述基板固定件内。The substrate is fixed and clamped in the substrate fixing member.
作为本发明一实施方式的进一步改进,所述将所述支撑件分别放置于所述产品封装结构两侧,将所述盖板盖设于所述产品封装结构的上表面,并搭载放置于所述支撑件上,具体包括:As a further improvement of an embodiment of the present invention, the support members are respectively placed on both sides of the product packaging structure, the cover plate is covered on the upper surface of the product packaging structure, and is mounted on the product packaging structure. on the support, specifically including:
放置于所述基板一侧的支撑件包括一组第一支撑件和两组第二支撑件,将所述第一支撑件放置于所述盖板沿长度方向的相对两侧,将两组所述第二支撑件放置于所述盖板沿宽度方向的相对两侧,放置于所述基板同侧的第一支撑件和第二支撑件在平面上构成一三角形结构;The support members placed on one side of the base plate include a set of first support members and two sets of second support members, the first support members are placed on opposite sides of the cover plate along the length direction, and the two sets of support members are placed. The second support members are placed on opposite sides of the cover plate along the width direction, and the first support member and the second support member placed on the same side of the base plate form a triangular structure on a plane;
将所述盖板盖设于所述上部芯片的上表面,并同时搭载放置于所述第一支撑件和所述第二支撑件上。The cover plate is covered on the upper surface of the upper chip, and is mounted on the first support member and the second support member at the same time.
作为本发明一实施方式的进一步改进,所述制作方法还包括:As a further improvement of an embodiment of the present invention, the manufacturing method further includes:
于所述第一支撑件和所述第二支撑件顶部朝所述盖板一侧向内凹陷形成一台阶,所述台阶上表面高度与所述上部芯片上表面高度保持一致,将所述盖板在其长度方向上的两端同时搭载放置于所述第一支撑件和所述第二支撑件的台阶上表面上,所述盖板固定卡接于所述第一支撑件和所述第二支撑件的台阶内。A step is formed on the top of the first support member and the second support member, which is recessed inward toward the cover plate side, and the height of the upper surface of the step is consistent with the height of the upper surface of the upper chip. Both ends of the board in its length direction are simultaneously mounted on the upper surfaces of the steps of the first support and the second support, and the cover plate is fixedly clamped to the first support and the second support. Inside the steps of the two supports.
作为本发明一实施方式的进一步改进,所述制作方法还包括:As a further improvement of an embodiment of the present invention, the manufacturing method further includes:
于所述支撑件部分区域处安装一弹性件,所述弹性件可使所述支撑件在其高度方向上进行伸缩运动。An elastic piece is installed at the partial area of the support piece, and the elastic piece enables the support piece to perform telescopic movement in the height direction thereof.
本发明还提供一种芯片防翘曲装置,所述芯片防翘曲装置包括底座和设置于所述底座上的至少两个支撑件,所述底座用于放置基板和设置于所述基板上的堆叠芯片组,所述堆叠芯片组至少包括上部芯片和下部芯片,所述下部芯片设置于所述基板和上部芯片之间,所述支撑件分别设置于所述基板两侧;The present invention also provides a chip anti-warping device, the chip anti-warping device includes a base and at least two support members disposed on the base, the base is used for placing a substrate and a support member disposed on the substrate. a stacked chip set, the stacked chip set at least includes an upper chip and a lower chip, the lower chip is arranged between the substrate and the upper chip, and the support members are respectively arranged on both sides of the substrate;
所述装置还包括一盖板,所述盖板盖设于所述上部芯片的上表面,并搭载设置于所述支撑件上。The device further includes a cover plate, the cover plate covers the upper surface of the upper chip, and is mounted on the support member.
作为本发明一实施方式的进一步改进,设置于所述基板两侧的支撑件包括第一支撑件和第二支撑件,所述第一支撑件设置于所述盖板沿长度方向的相对两侧,所述第二支撑件设置于所述盖板沿宽度方向的相对两侧。As a further improvement of an embodiment of the present invention, the support members disposed on both sides of the base plate include a first support member and a second support member, and the first support members are disposed on opposite sides of the cover plate along the length direction. , the second support members are arranged on opposite sides of the cover plate along the width direction.
作为本发明一实施方式的进一步改进,设置于所述基板一侧的支撑件包括一组第一支撑件和两组第二支撑件,两组所述第二支撑件分别设置于所述盖板沿宽度方向的相对两侧,位于所述基板同侧的第一支撑件和第二支撑件在平面上构成一三角形结构。As a further improvement of an embodiment of the present invention, the support member disposed on one side of the substrate includes a set of first support members and two sets of second support members, and the two sets of second support members are respectively disposed on the cover plate On opposite sides along the width direction, the first support member and the second support member located on the same side of the substrate form a triangular structure on a plane.
作为本发明一实施方式的进一步改进,所述第一支撑件和所述第二支撑件的顶部朝所述基板一侧向内凹陷形成有一台阶,所述台阶上表面高度与所述上部芯片上表面高度保持一致,所述盖板在其长度方向上的两端同时搭载设置于所述第一支撑件和所述第二支撑件的台阶上表面上,所述盖板固定卡接于所述第一支撑件和所述第二支撑件的台阶内。As a further improvement of an embodiment of the present invention, the tops of the first support member and the second support member are recessed inward toward the substrate side to form a step, and the height of the upper surface of the step is the same as the height of the upper surface of the upper chip. The surface heights are kept the same, the two ends of the cover plate in the longitudinal direction are mounted on the upper surfaces of the steps of the first support member and the second support member at the same time, and the cover plate is fixedly clamped to the in the steps of the first support and the second support.
作为本发明一实施方式的进一步改进,所述下部芯片的功能面通过焊球倒装焊接于所述基板的上表面,所述上部芯片的功能面通过焊球倒装焊接于所述下部芯片的上表面。As a further improvement of an embodiment of the present invention, the functional surface of the lower chip is flip-chip bonded to the upper surface of the substrate through solder balls, and the functional surface of the upper chip is flip-chip bonded to the lower chip through solder balls. upper surface.
作为本发明一实施方式的进一步改进,所述装置还包括基板固定件,所述基板固定件设置于所述底座上方,所述基板固定卡接在所述基板固定件内。As a further improvement of an embodiment of the present invention, the device further includes a base plate fixing member, the base plate fixing member is disposed above the base, and the base plate is fixedly clamped in the base plate fixing member.
作为本发明一实施方式的进一步改进,所述基板固定件的顶端高度低于所述台阶的上表面高度。As a further improvement of an embodiment of the present invention, the height of the top of the substrate fixing member is lower than the height of the upper surface of the step.
作为本发明一实施方式的进一步改进,所述支撑件部分区域设置有一弹性件,所述弹性件可使所述支撑件在其高度方向上进行伸缩运动。As a further improvement of an embodiment of the present invention, an elastic member is provided in a partial area of the support member, and the elastic member enables the support member to perform telescopic movement in the height direction thereof.
本发明的有益效果在于:将形成的测试封装结构一次进行回流焊工艺,若经回流焊工艺后测试封装结构的焊接性能正常,则后续产品制作工艺中与测试封装结构中相同的芯片均可采用先焊接后一次回流的制作工艺;但是,当经回流焊工艺后测试封装结构的焊接性能失效时,则在后续产品制作工艺中,将与测试封装结构相同的产品封装结构固定安装于本发明提供的芯片防翘曲装置中,再进行回流焊工艺,即使在上部芯片尺寸较小、重量较轻的情况下,利用盖板的重量对上部芯片进行施压,也能够很好地抑制芯片封装结构在回流焊工艺过程中下部芯片产生较大程度的翘曲,防止上部芯片和下部芯片之间出现焊接问题的情况,改善3D封装焊接质量。The beneficial effect of the present invention is that the formed test packaging structure is subjected to a reflow soldering process at one time, and if the soldering performance of the test packaging structure is normal after the reflow soldering process, the same chips in the subsequent product manufacturing process as those in the test packaging structure can be used. The manufacturing process of first soldering and then reflowing; however, when the soldering performance of the test package structure fails after the reflow soldering process, in the subsequent product manufacturing process, the product package structure identical to the test package structure is fixedly installed in the package provided by the present invention. In the anti-warping device of the chip, the reflow soldering process is carried out. Even if the upper chip is small in size and light in weight, the weight of the cover plate is used to press the upper chip, which can well suppress the chip packaging structure. During the reflow soldering process, the lower chip is warped to a large extent, preventing welding problems between the upper chip and the lower chip, and improving the welding quality of the 3D package.
附图说明Description of drawings
图1为本发明一实施方式中的封装结构的制作方法流程示意图。FIG. 1 is a schematic flowchart of a manufacturing method of a package structure in an embodiment of the present invention.
图2(a)~(h)为本发明一实施方式中的封装结构的制作步骤图。FIGS. 2( a ) to ( h ) are diagrams of manufacturing steps of a package structure in an embodiment of the present invention.
图3为本发明一实施方式中的芯片防翘曲装置的结构侧视图。FIG. 3 is a structural side view of a chip warpage preventing device in an embodiment of the present invention.
图4为本发明一实施方式中的芯片防翘曲装置的结构俯视图。FIG. 4 is a top view of the structure of a device for preventing warping of a chip according to an embodiment of the present invention.
图5为本发明另一实施方式中的芯片防翘曲装置的结构侧视图。FIG. 5 is a structural side view of a device for preventing warping of a chip according to another embodiment of the present invention.
具体实施方式Detailed ways
为使本发明的目的、技术方案和优点更加清楚,下面将结合本发明具体实施方式及相应的附图对本发明技术方案进行清楚、完整地描述。显然,所描述的实施方式仅是本发明一部分实施方式,而不是全部的实施方式。基于本发明中的实施方式,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式,都属于本发明保护的范围。In order to make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
下面详细描述本发明的实施方式,实施方式的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的,仅用于解释本发明,而不能理解为对本发明的限制。Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary, only used to explain the present invention, and should not be construed as a limitation of the present invention.
为方便说明,本文使用表示空间相对位置的术语来进行描述,例如“上”、“下”、“后”、“前”等,用来描述附图中所示的一个单元或者特征相对于另一个单元或特征的关系。空间相对位置的术语可以包括设备在使用或工作中除了图中所示方位以外的不同方位。例如,如果将图中的装置翻转,则被描述为位于其他单元或特征“下方”或“上方”的单元将位于其他单元或特征“下方”或“上方”。因此,示例性术语“下方”可以囊括下方和上方这两种空间方位。For the convenience of description, the term used to describe the relative position in space, such as "upper", "lower", "rear", "front", etc., is used to describe one unit or feature shown in the drawings relative to another A unit or feature relationship. The term spatially relative position may include different orientations of the device in use or operation other than the orientation shown in the figures. For example, if the device in the figures is turned over, elements described as "below" or "above" other elements or features would then be oriented "below" or "above" the other elements or features. Thus, the exemplary term "below" can encompass both a spatial orientation of below and above.
本发明一实施方式还提供一种封装结构的制作方法,如图1所示,包括步骤:An embodiment of the present invention also provides a manufacturing method of a package structure, as shown in FIG. 1 , including the steps:
S1:提供一测试基板和测试堆叠芯片组,测试堆叠芯片组至少包括上部测试芯片和下部测试芯片,将下部测试芯片形成于测试基板和上部测试芯片之间,形成测试封装结构。S1: Provide a test substrate and a test stack chip set, the test stack chip set includes at least an upper test chip and a lower test chip, and the lower test chip is formed between the test substrate and the upper test chip to form a test package structure.
S2:将测试封装结构进行回流焊工艺。S2: The test package structure is subjected to a reflow soldering process.
S3:测试回流焊工艺后的上部测试芯片与下部测试芯片之间的焊接性能。S3: Test the soldering performance between the upper test chip and the lower test chip after the reflow soldering process.
S4:当焊接性能失效时,提供一芯片防翘曲装置和与测试封装结构相同的产品封装结构,芯片防翘曲装置包括一底座、至少两个支撑件和盖板,将产品封装结构固定放置于底座上方,将支撑件分别放置于产品封装结构两侧,将盖板盖设于产品封装结构的上表面,并搭载放置于所述支撑件上。S4: When the soldering performance fails, provide a chip anti-warping device and a product packaging structure with the same structure as the test package. The chip anti-warping device includes a base, at least two supports and a cover plate, and the product packaging structure is fixedly placed Above the base, the support members are respectively placed on both sides of the product packaging structure, the cover plate is covered on the upper surface of the product packaging structure, and mounted on the support members.
S5:将固定装载于芯片防翘曲装置内的产品封装结构进行回流焊工艺。S5: perform a reflow soldering process on the product packaging structure that is fixedly loaded in the chip anti-warping device.
在步骤S1中,提供一测试基板1’和测试堆叠芯片组2’,测试堆叠芯片组2’至少包括上部测试芯片21’和下部测试芯片22’,将下部测试芯片22’形成于测试基板1’和上部测试芯片21’之间,形成测试封装结构A’,具体包括:In step S1, a test substrate 1' and a test stack chip set 2' are provided. The test stack chip set 2' includes at least an upper test chip 21' and a lower test chip 22', and the lower test chip 22' is formed on the test substrate 1 ' and the upper test chip 21', a test package structure A' is formed, which specifically includes:
如图2(a)~(c)所示,提供一测试基板1’,测试基板1’上表面设置有多个电性焊盘,利用倒装球焊工艺将下部测试芯片22’的功能面通过焊球6焊接于测试基板1’的上表面,下部测试芯片22’与测试基板1’之间实现电性连接,将上部测试芯片21’的功能面通过焊球6倒装焊接于下部测试芯片22’的上表面,上部测试芯片21’和下部测试芯片22’之间实现电性连接。在本实施方式中,下部测试芯片22’优选为TSV芯片,其厚度可选为100~200μm,上部测试芯片21’为其他功能性芯片,芯片厚度可根据实际设计需求选择,焊球6为锡球,高温下可融化进行焊接,常温下为固体,对下部测试芯片22’和上部测试芯片21’起到一定的支撑作用。As shown in FIGS. 2( a ) to ( c ), a
当然,此步骤中还包括向下部测试芯片22’的功能面和上部测试芯片21’的功能面涂覆助焊剂,此为现有技术,本发明在此不过多说明,但需要强调的是,在本发明具体实施方式中,使用粘性较高、且耐温性好的助焊剂,如树脂活性系列助焊剂,防止封装结构在回流焊工艺中,上部测试芯片21’、下部测试芯片22’和测试基板1’之间存在移位的风险。Of course, this step also includes applying flux to the functional surface of the lower test chip 22' and the functional surface of the upper test chip 21', which is the prior art, and the present invention will not be described here, but it should be emphasized that, In the specific embodiment of the present invention, a flux with high viscosity and good temperature resistance, such as a resin active series flux, is used to prevent the
在本发明一实施方式中,上部测试芯片21’为并排焊接于下部测试芯片22’上的两块芯片,如图2(c)所示。在本发明其他实施方式中,上部测试芯片21’也可以是并排焊接于下部测试芯片22’上的多块芯片,或者是在竖直方向上叠加焊接的多层芯片,可根据实际设计需求设置,本发明在此不作限制。In an embodiment of the present invention, the upper test chip 21' is two chips that are soldered side by side on the lower test chip 22', as shown in Fig. 2(c). In other embodiments of the present invention, the
在步骤S3中,测试回流焊工艺后的上部测试芯片21’与下部测试芯片22’之间的焊接性能,具体包括:In step S3, test the welding performance between the upper test chip 21' and the lower test chip 22' after the reflow process, specifically including:
对进行步骤S2之后的测试封装结构A’进行导电性能的测试,具体的,测试上部测试芯片21’与下部测试芯片22’之间的导电性能,若上部测试芯片21’与下部测试芯片22’之间存在电性连接,则测试结果正常,对于与上部测试芯片21’与下部测试芯片22’相同的各芯片即可按照步骤S1-S2进行工艺制作,先进行芯片焊接、组装,再一次回流的制作工艺;若上部测试芯片21’与下部测试芯片22’之间的导电性能的测试结果为开路或短路,则进行步骤S4。Conduct a conductivity test on the test package structure A' after step S2, specifically, test the conductivity between the upper test chip 21' and the lower test chip 22', if the upper test chip 21' and the lower test chip 22' If there is an electrical connection between them, the test result is normal. For each chip that is the same as the upper test chip 21' and the lower test chip 22', it can be fabricated according to steps S1-S2, and the chips are first soldered, assembled, and reflowed again. If the test result of the electrical conductivity between the upper test chip 21' and the lower test chip 22' is an open circuit or a short circuit, step S4 is performed.
在本发明的另一种实施方式中,对进行步骤S2之后的测试封装结构A’,也可利用X-Ray技术检测焊球6的焊接质量,具体的,检查上部测试芯片21’与下部测试芯片22’之间各焊球6的焊接质量,观察经过回流焊工艺后的焊球6是否存在空洞、焊桥、焊点过大、焊点不足等情况。同样的,若检测结果正常,对于与上部测试芯片21’与下部测试芯片22’相同的各芯片即可按照步骤S1-S2进行工艺制作,先进行芯片焊接、组装,再一次回流的制作工艺;若检测出焊球6存在异常情况,则进行步骤S4。In another embodiment of the present invention, for the test package structure A' after step S2, X-Ray technology can also be used to detect the soldering quality of the
当然,在本发明其他实施方式中,也可既检测封装结构A’进行导电性能,又利用X-Ray技术检测焊球6的焊接质量,以保证封装结构焊性性能是否有效的准确性。具体可根本实际制作工艺进行检测,本发明对检测焊接性能的具体技术手段不作限制。Of course, in other embodiments of the present invention, it is also possible to not only detect the conductive performance of the package structure A', but also use the X-Ray technology to detect the soldering quality of the
在步骤S4中,提供与测试封装结构A’相同的产品封装结构A,具体包括:In step S4, the same product packaging structure A as the test packaging structure A' is provided, which specifically includes:
如图2(d)所示,提供与测试基板1’相同的基板1和与测试堆叠芯片组2’相同的堆叠芯片组2,堆叠芯片组2至少包括与上部测试芯片21’相同的上部芯片21和与下部测试芯片22’相同的下部芯片22。As shown in FIG. 2(d), the
将下部芯片22形成于基板1和上部芯片21之间,形成产品封装结构A,具体的,基板1上表面设置有多个电性焊盘,利用倒装球焊工艺将下部芯片22的功能面通过焊球6焊接于基板1的上表面,下部芯片22与基板1之间实现电性连接,将上部芯片21的功能面通过焊球6倒装焊接于下部芯片22的上表面,上部芯片21和下部芯片22之间实现电性连接。这里,上部芯片21和下部芯片22的芯片类型选择以及上部芯片21具体的排布方式均与测试封装结构A’中相同,这里不再过多赘述。下文均以图2(d)中上部芯片21为并排焊接于下部芯片22上的两块芯片的封装结构为例进行说明。The
在步骤S4中,提供一芯片防翘曲装置,将产品封装结构A固定放置于底座3上方,具体包括:In step S4, a chip anti-warping device is provided, and the product packaging structure A is fixedly placed above the
如图2(e)所示,本发明具体实施方式中的芯片防翘曲装置中还提供基板固定件7,将产品封装结构A和基板固定件7放置于底座3上方,基板固定件7至少放置于基板1一对角处,于基板1一对角的角端两侧分别放置有两个基板固定件7,通过对角角端两侧分别放置的两个基板固定件7将基板1固定住。具体的,于基板1两个对角的各角端两侧都分别放置两个基板固定件7,基板1固定卡接在基板固定件7内,用于将基板1在后续的封装工艺中都固定不动。As shown in FIG. 2(e), the chip anti-warping device in the specific embodiment of the present invention also provides a
在本发明具体实施方式中,提供的基板固定件7的高度可稍高于基板1的上表面高度,以保证其能够更好地固定基板1。但是,对于基板固定件7的具体高度,本发明在此不作限制,只需基板固定件7的顶端高度低于上部芯片21上表面的高度,在能够将基板1固定不动的同时,也不存在与后续工艺中放置于上部芯片21上方的盖板5下表面发生干涉的情况即可。In the specific embodiment of the present invention, the height of the provided
优选的,基板固定件7为Pin针,当然,在本发明其他一些实施方式中,基板固定件7也可为其他一些耐高温的材质制成的固定件,在高温下依旧能够对基板1起到固定作用即可。Preferably, the
在本发明其他一些实施方式中,也可先将基板1固定放置于底座3上,然后再在基板1上表面进行芯片焊接工艺形成产品封装结构A,对于这两者的工艺顺序,本发明在此不作限制。In other embodiments of the present invention, the
在步骤S4中,将支撑件4分别放置于产品封装结构A两侧,将盖板5盖设于产品封装结构A上表面,并搭载放置于支撑件4上,具体包括:In step S4, the
如图2(f)所示,盖板5为长方形硅片,将盖板5放置于上部芯片21上表面,即其下表面与上部芯片21上表面相接触,用于对上部芯片21施加一定压力,其重量越大,对上部芯片21施加的压力越大。盖板5的尺寸可根据上部芯片21的具体排布方式设计,优选的,盖板5全覆盖每块上部芯片21上表面设置,以保证每块上部芯片21各点位置受力均匀。盖板5的厚度可根据实际设计需求决定,在后续回流焊工艺中,盖板5对上部芯片21施加的压力既能够防止下部芯片22产生翘曲,不会影响上部芯片21和下部芯片22之间的有效焊接的同时,也能够保证其对上部芯片21施加的压力不至于将焊球6压塌即可。当然,在其他一些实施方式中,盖板5的材质也可为其他一些耐高温材质,比如玻璃片等等。As shown in FIG. 2( f ), the
如图2(g)所示,本发明具体实施方式中提供的放置于基板1一侧的支撑件4包括一组第一支撑件41和两组第二支撑件42,将第一支撑件41放置于盖板5沿长度方向的相对两侧,将两组第二支撑件42放置于盖板5沿宽度方向的相对两侧,放置于基板1同侧的第一支撑件41和第二支撑件42在平面上构成一三角形结构。As shown in FIG. 2( g ), the
具体的,提供的第一支撑件41和第二支撑件42的顶部朝盖板5一侧向内凹陷形成有一台阶43,制作形成的台阶43上表面高度与上部芯片21的上表面高度保持一致。将盖板5在其长度方向上的两端同时搭载放置于第一支撑件41和第二支撑件42的台阶43上表面上,盖板5即可固定卡接于第一支撑件41和第二支撑件42的台阶内。如此,放置于盖板5长度方向上相对两侧的第一支撑件41的台阶面将盖板5在其长度方向上固定不动,位于盖板5宽度方向上相对两侧的第二支撑件42的台阶面将盖板5在其宽度方向上固定不动。Specifically, the tops of the provided
优选的,第一支撑件41和第二支撑件42为Pin针,当然,本发明对制作第一支撑件41和第二支撑件42的材料不作限制,选用能够耐高温的材质且在高温下具有一定支撑力即可。Preferably, the
在本发明可能的一些实施方式中,提供的芯片防翘曲装置中第一支撑件41、第二支撑件42和基板固定件7可移动固定于底座3上任意位置,第一支撑件41和第二支撑件42固定于底座3上的具体位置可根据盖板5的具体长度以及其摆放在上部芯片21上表面的具体位置来定,放置于盖板5两侧的第一支撑件41和第二支撑件42的台阶能够限制盖板5在其长度方向上和宽度方向上运动即可。提供用于支撑、固定盖板5的支撑件4的具体数量和排布方式根据盖板5的尺寸等因素而具体调整。基板固定件7固定于底座3上的具体位置根据基板1的具体尺寸而具体调整,放置于基板1两个对角的各角端两侧的基板固定件7能够限制基板1在其长度方向上和宽度方向上运动即可。In some possible embodiments of the present invention, the
最后进行步骤S5,将固定装载于提供的芯片防翘曲装置内的产品封装结构进行回流焊工艺,由于盖板5对上部芯片21施加有一定压力,且能够相对避免高温下上部芯片21与下部芯片22在水平方向上的移动,且防止在回流焊工艺过程中,由于温度变化引起下部芯片22产生较大翘曲而导致上部芯片21和下部芯片22之间焊接失效的问题。Finally, step S5 is performed to perform a reflow soldering process on the product packaging structure fixedly loaded in the provided chip warpage preventing device. Since the
但是,由于高温下焊球6呈现融化状态,盖板5的尺寸、厚度及重量设计对施加在上部芯片21和下部芯片22的压力非常重要,压力过大很容易导致上部芯片21和下部芯片22之间、以及下部芯片22和基板1之间产生桥连现象,所以对于盖板5尺寸、厚度及重量的选择需要非常精确,工艺难度大。However, since the
所以,本发明封装结构的制作方法步骤S4中还提供另一种的芯片防翘曲装置结构,如图2(h)所示,在将第一支撑件41和第二支撑件42固定放置于底座3上之前,于支撑件4部分区域处先安装一弹性件8。具体的,在第一支撑件41和第二支撑件42的底端均安装一弹性件8,弹性件8可使第一支撑件41和第二支撑件42在其高度方向上进行伸缩运动。Therefore, in step S4 of the manufacturing method of the package structure of the present invention, another structure of the chip anti-warping device is provided. As shown in FIG. Before being mounted on the
当焊球6在高温下呈现融化状态时,其对上部芯片21和下部芯片22的支撑力减小,在盖板5对上部芯片21和下部芯片22的压力大于高温下焊球6对上部芯片21和下部芯片22的支撑力时,此时弹性件8逐渐收缩,即弹性件8在其高度方向上向下运动,弹性件8对于盖板5的支撑力上升,避免上部芯片21和下部芯片22之间、以及下部芯片22和基板1之间产生桥连现象。当然,在此实施方式中,盖板5的重量和弹性件8的弹性强度根据不同产品不同设计,本发明在此不作限制。在安装有弹性件8的芯片防翘曲装置中,对于盖板的尺寸、厚度及重量的选择无需精确控制,大大降低工艺难度。When the
当然,在安装有弹性件8的芯片防翘曲装置中,弹性件8不局限在安装于支撑件4的底端,其也可固定安装于各支撑件的台阶43上表面,盖板5在其长度方向上的两端放置于弹性件8上方,并固定卡接于各支撑件的台阶43内。需要说明的是,当弹性件8安装于各支撑件的台阶43上表面时,此时的台阶43上表面高度需低于上部芯片21的上表面高度,且安装于台阶43上的弹性件8的上表面高度需满足与上部芯片21的上表面高度保持一致。Of course, in the chip anti-warping device with the
或者,在本发明可能的其他实施方式中,支撑件4整体支撑成一弹性件,盖板5下表面制作与支撑件4尺寸相符合的圆孔,支撑件4顶端能够固定卡接于圆孔内,将盖板5支撑固定住即可。Alternatively, in other possible embodiments of the present invention, the supporting
本发明对于提供的芯片防翘曲装置中支撑件4、弹性件8和盖板5之间的具体结构关系不局限于此,只需能够将盖板5支撑、固定,且对能够使得盖板5在其高度方向上运动即可。The specific structural relationship between the
将如图2(h)所示的固定装载于安装有弹性件8的芯片防翘曲装置内的封装结构进行步骤S5,在支撑件4底端安装的弹性件8能够防止在回流焊工艺中,由于焊球在高温下呈融化状态而导致其对上部芯片21和下部芯片22的支撑力减小,此时弹性件8能够对盖板5起到一定的支撑力,避免上部芯片21和下部芯片22之间、以及下部芯片22和基板1之间产生桥连现象。Step S5 is performed on the package structure as shown in FIG. 2(h) that is fixedly loaded in the chip warpage prevention device with the
如图3和4所示,本发明还提供一种芯片防翘曲装置,应用于封装结构的制作方法中。在3D堆叠项目中,下部芯片较薄,在常温或高温下,下部芯片均容易出现较大翘曲,当制作完成的测试封装结构进行回流焊工艺后无法保证芯片之间的焊接性能时,则需要使用到本发明所提供的芯片防翘曲装置,特别当上部芯片尺寸较小时,其对于下部芯片的压力无法抑制下部芯片产生翘曲,容易导致上部芯片和下部芯片之间焊接失效的问题。所以,本发明提供的一种芯片防翘曲装置应用于上部芯片尺寸较小、重量较轻的情况。As shown in FIGS. 3 and 4 , the present invention further provides a device for preventing warping of a chip, which is applied to a method for manufacturing a package structure. In the 3D stacking project, the lower chip is thinner, and the lower chip is prone to warpage at room temperature or high temperature. When the fabricated test package structure cannot guarantee the soldering performance between chips after reflow soldering The chip warpage prevention device provided by the present invention needs to be used, especially when the size of the upper chip is small, the pressure on the lower chip cannot restrain the warpage of the lower chip, which may easily lead to the problem of welding failure between the upper chip and the lower chip. Therefore, the device for preventing warping of the chip provided by the present invention is applied to the case where the upper chip is small in size and light in weight.
本发明一实施方式中提出的芯片防翘曲装置包括底座3和设置于底座3上的至少两个支撑件4,底座3用于放置基板1和设置于基板1上的堆叠芯片组2。The chip warpage prevention device proposed in an embodiment of the present invention includes a
堆叠芯片组2至少包括上部芯片21和下部芯片22,下部芯片22设置于基板1和上部芯片21之间。下部芯片22优选为TSV芯片,其厚度可选为100~200μm,上部芯片21为其他功能性芯片,芯片厚度可根据实际设计需求选择。在本发明一实施方式中,上部芯片21为并排焊接在下部芯片22上的两块芯片,如图中所示。当然,在本发明其他实施方式中,上部芯片21也可以是并排焊接在下部芯片22上的多块芯片,或者是在竖直方向上叠加焊接的多块芯片,可根据实际设计需求设置,本发明在此不作限制,下文均以上部芯片21为并排焊接在下部芯片22上的两块芯片的封装结构为例进行说明。The stacked chip set 2 includes at least an
具体的,下部芯片22具有设置有焊盘的功能面以及与功能面相对的非功能面,下部芯片22的功能面朝向基板1设置,通过焊球6倒装焊接于基板1的上表面,与基板1实现电性连接。同样的,上部芯片21具有设置有焊盘的功能面以及与功能面相对的非功能面,上部芯片21的功能面朝向下部芯片22设置,通过焊球6倒装焊接于下部芯片22的上表面,与下部芯片22实现电性连接。在本实施方式中,焊球6具体为锡球,高温下可融化进行焊接,常温下为固体,对下部芯片22和上部芯片21起到一定的支撑作用。Specifically, the
支撑件4分别设置于基板1两侧,芯片防翘曲装置还包括一盖板5,盖板5盖设于上部芯片21的上表面,并搭载设置于支撑件4上。具体的,盖板5为长方形硅片,其下表面与上部芯片21上表面相接触,用于对上部芯片21施加一定压力,其重量越大,对上部芯片21施加的压力越大。盖板5的尺寸可根据上部芯片21的具体排布方式设计,优选的,盖板5全覆盖每块上部芯片21上表面设置,以保证每块上部芯片21各点位置受力均匀。盖板5的厚度可根据实际设计需求决定,在后续回流焊工艺中,盖板5对上部芯片21施加的压力既能够防止下部芯片22产生翘曲,不会影响上部芯片21和下部芯片22之间的有效焊接的同时,也能够保证其对上部芯片21施加的压力不至于将焊球6压塌即可。当然,在其他一些实施方式中,盖板5的材质也可为其他一些耐高温材质,比如玻璃片等等。The
具体的,设置于基板1两侧的支撑件4包括第一支撑件41和第二支撑件42,第一支撑件41设置于盖板5沿长度方向的相对两侧,第二支撑件42设置于盖板5沿宽度方向的相对两侧。Specifically, the
设置于基板1一侧的支撑件4包括一组第一支撑件41和两组第二支撑件42,两组第二支撑件42分别设置于盖板5沿宽度方向的相对两侧,位于基板1同侧的第一支撑件41和第二支撑件42在平面上构成一三角形结构。The
更具体的,第一支撑件41和第二支撑件42的顶部朝盖板5一侧向内凹陷形成有一台阶43,台阶43上表面高度与上部芯片21的上表面高度保持一致,盖板5在其长度方向上的两端同时搭载设置于第一支撑件41和第二支撑件42的台阶43上表面上,盖板5固定卡接于第一支撑件41和第二支撑件42的台阶内。即位于盖板5长度方向上相对两侧的第一支撑件41的台阶面将盖板5在其长度方向上固定不动,位于盖板5宽度方向上相对两侧的第二支撑件42的台阶面将盖板5在其宽度方向上固定不动。More specifically, the tops of the
在本发明具体实施方式中,第一支撑件41和第二支撑件42为Pin针,当然,本发明对制作第一支撑件41和第二支撑件42的材料不作限制,选用能够耐高温的材质且在高温下具有一定支撑力即可。In the specific embodiment of the present invention, the
进一步的,芯片防翘曲装置还包括基板固定件7,基板固定件7设置于底座3上方,基板固定件7至少设置于基板1一对角处,于基板1一对角的角端两侧分别设置有两个基板固定件7,基板1固定卡接在基板固定件7内。在本实施方式中,于基板1两个对角的各角端两侧都分别设置有两个基板固定件7,用于将基板1在后续的封装过程中都固定不动。Further, the chip anti-warping device further includes a
具体的,基板固定件7的顶端高度可稍高于基板1的上表面高度,以保证其能够更好地固定基板1。但是,对于基板固定件7的具体高度,本发明在此不作限制,只需基板固定件7的顶端高度低于台阶43上表面的高度,在能够将基板1固定不动的同时,也不存在与盖板5下表面发生干涉的情况即可。Specifically, the height of the top of the
基板固定件7同样为Pin针,当然,在本发明其他一些实施方式中,基板固定件7也可为其他一些耐高温的材质制成的固定件,在高温下依旧能够对基板1起到固定作用即可。The
在本发明可能的一些实施方式中,第一支撑件41、第二支撑件42和基板固定件7可移动固定于底座上任意位置,第一支撑件41和第二支撑件42固定于底座3上的具体位置可根据盖板5的具体长度以及其摆放在上部芯片21上表面的具体位置来定,位于盖板5两侧的第一支撑件41和第二支撑件42的台阶能够限制盖板5在其长度方向上和宽度方向上运动即可。设置用于支撑、固定盖板5的支撑件4的具体数量和排布方式根据盖板5的尺寸等因素而具体调整。基板固定件7固定于底座3上的具体位置可根据基板1的具体尺寸来定,位于基板1两个对角的各角端两侧的基板固定件7能够限制基板1在其长度方向上和宽度方向上运动即可。In some possible embodiments of the present invention, the
在常温下,由于焊球6为固体,能够支撑上部芯片21和下部芯片22受到的盖板5的压力,而在高温下,焊球6随着温度升高会呈现融化状态,盖板5的尺寸、厚度、及重量设计对施加在上部芯片21和下部芯片22的压力非常重要,压力过大很容易导致上部芯片21和下部芯片22之间、以及下部芯片22和基板1之间产生桥连现象,所以对于上述实施方式中的芯片防翘曲装置中关于盖板5尺寸、厚度及重量的选择需要非常精确,工艺难度大。At normal temperature, since the
如图5所示为本发明另一种实施方式中的芯片防翘曲装置,与图3中结构不同的是,为了防止上部芯片21和下部芯片22下表面的焊球6在高温下融化而导致上部芯片21和下部芯片22之间、以及下部芯片22和基板1之间产生桥连现象,支撑件4部分区域设置有一弹性件8,弹性件8可使支撑件4在其高度方向上进行伸缩运动,具体的,弹性件8设置于支撑件4的底端,即第一支撑件41和第二支撑件42的底端均设置有弹性件8。由于焊球6在高温下呈现融化状态,对上部芯片21和下部芯片22的支撑力减小,在盖板5对上部芯片21和下部芯片22的压力大于高温下焊球6对上部芯片21和下部芯片22的支撑力时,此时弹性件8逐渐收缩,即弹性件8在其高度方向上向下运动,弹性件8对于盖板5的支撑力上升,避免上部芯片21和下部芯片22之间、以及下部芯片22和基板1之间产生桥连现象。在此实施方式中,盖板5的重量和弹性件8的弹性强度根据不同产品不同设计,本发明在此不作限制。As shown in FIG. 5 , the device for preventing warping of chips in another embodiment of the present invention is different from the structure in FIG. 3 in that in order to prevent the
当然,本发明中弹性件8不局限在设置于支撑件4的底端,其也可固定设置于各支撑件的台阶43上表面,盖板5在其长度方向上的两端放置于弹性件8上方,并固定卡接于各支撑件的台阶43内。需要说明的是,当弹性件8设置于各支撑件的台阶43上表面时,此时的台阶43上表面高度需低于上部芯片21的上表面高度,且放置于台阶43上的弹性件8的上表面高度需满足与上部芯片21的上表面高度保持一致。Of course, in the present invention, the
或者,在本发明可能的其他实施方式中,支撑件4整体为一弹性件,盖板5下表面设置有与支撑件4尺寸相符合的圆孔,支撑件4顶端能够固定卡接于圆孔内,将盖板5支撑固定住即可。Alternatively, in other possible implementations of the present invention, the supporting
本发明对于支撑件4、弹性件8和盖板5之间的具体结构关系不局限于此,只需能够将盖板5支撑、固定,且对能够使得盖板5在其高度方向上运动即可。The specific structural relationship between the
综上所述,本发明中将形成的测试封装结构一次进行回流焊工艺,若经回流焊工艺后测试封装结构的焊接性能正常,则后续产品制作工艺中与测试封装结构中相同的芯片均可采用先焊接后一次回流的制作工艺;但是,当经回流焊工艺后测试封装结构的焊接性能失效时,则在后续产品制作工艺中,将与测试封装结构相同的产品封装结构固定安装于本发明提供的芯片防翘曲装置中,再进行回流焊工艺,即使在上部芯片尺寸较小、重量较轻的情况下,利用盖板的重量对上部芯片进行施压,也能够很好地抑制芯片封装结构在回流焊工艺过程中下部芯片产生较大程度的翘曲,防止上部芯片和下部芯片之间出现焊接问题的情况,改善3D封装焊接质量。To sum up, the test package structure formed in the present invention is subjected to a reflow soldering process at one time. If the soldering performance of the test package structure is normal after the reflow soldering process, the same chips in the subsequent product manufacturing process as those in the test package structure can be used. The manufacturing process of first soldering and then reflowing is adopted; however, when the soldering performance of the test package structure fails after the reflow process, in the subsequent product manufacturing process, the product package structure identical to the test package structure is fixedly installed in the present invention In the provided chip anti-warping device, the reflow soldering process is performed again. Even if the upper chip is small in size and light in weight, the weight of the cover plate is used to press the upper chip, which can well suppress the chip packaging. In the structure, the lower chip is warped to a large extent during the reflow soldering process, which prevents welding problems between the upper chip and the lower chip, and improves the welding quality of the 3D package.
应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施方式中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。It should be understood that although this specification is described in terms of embodiments, not every embodiment only includes an independent technical solution, and this description in the specification is only for the sake of clarity, and those skilled in the art should take the specification as a whole, and each The technical solutions in the embodiments can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.
上文所列出的一系列的详细说明仅仅是针对本发明的可行性实施方式的具体说明,它们并非用以限制本发明的保护范围,凡未脱离本发明技艺精神所作的等效实施方式或变更均应包含在本发明的保护范围之内。The series of detailed descriptions listed above are only specific descriptions for the feasible embodiments of the present invention, and they are not used to limit the protection scope of the present invention. Changes should all be included within the protection scope of the present invention.
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